CN110088922A - A kind of LED chip construction and preparation method thereof - Google Patents

Abstract

The invention provides a light-emitting diode chip structure and a manufacturing method thereof. The structure includes: a substrate; a light-emitting epitaxial structure, located on the substrate, includes a first conductive type semiconductor layer, a quantum well layer and a second conductive type layered in sequence. a semiconductor layer; a current spreading layer, formed on a part of the surface of the epitaxial structure; an insulating layer, wrapping the sidewall of the current spreading layer, and the insulating layer has a series of patterned via structures; a metal layer, formed on the On the surface of the insulating layer, a part of the metal layer is in contact with the transparent conductive layer through a part of the through hole structure, and another part of the metal layer is in contact with the light-emitting epitaxial structure through a part of the through hole structure.

Description

A light-emitting diode chip structure and fabrication method thereof

technical field

The invention belongs to the field of semiconductor lighting, and in particular relates to a light emitting diode chip structure and a manufacturing method thereof.

Background technique

As a new type of high-efficiency solid light source, semiconductor lighting has significant advantages such as long life, energy saving, environmental protection, and safety. It will become another leap in the history of human lighting after incandescent lamps and light lamps. The upgrading of display and other industries has huge economic and social benefits. Because of this, semiconductor lighting is generally regarded as one of the most promising emerging industries in the 21st century, and it is also one of the most important commanding heights in the field of optoelectronics in the next few years. Light-emitting diodes (LED for short) are usually made of semiconductors such as GaN (gallium nitride), GaAs (gallium arsenide), GaP (gallium phosphide), GaAsP (gallium arsenide phosphide) and other semiconductors. For the characteristic PN junction, under the forward voltage, electrons are injected into the P region from the N region, holes are injected into the N region from the P region, and part of the minority carriers entering the opposite region recombine with the majority carriers to emit light.

Under the background of the current global energy shortage worries, saving energy is an important issue we will face in the future. In the field of lighting, LED is called the fourth generation lighting source or green light source, which has the advantages of energy saving, environmental protection, long life, volume It can be widely used in various fields such as indication, display, decoration, backlight, general lighting and urban night scenes.

In an existing LED chip structure, a reflective layer is generally arranged on a light-emitting epitaxial stack, for example, a distributed Bragg reflector (DBR) with a large difference between high and low refractive index or a metal (such as Ag) with a high reflectivity is used as the structure. Reflective layer, but DBR has a certain angle, and the heat conduction effect is not ideal, and the upper limit of the reflectivity of high-reflection metals is generally about 95%, which is difficult to further improve the reflectivity, which is not conducive to the extraction of external light from the LED chip, resulting in the chip’s luminous efficiency. improvement is restricted.

SUMMARY OF THE INVENTION

In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a light-emitting diode chip structure and a manufacturing method thereof, which are used to solve the problem that the light extraction efficiency of the light-emitting diode chip is low due to low external light extraction in the prior art. .

In order to achieve the above object and other related objects, the present invention provides a light-emitting diode chip structure, which is characterized by: comprising: a substrate; a light-emitting epitaxial structure, located on the substrate, comprising a first conductive type semiconductor layer stacked in sequence, a quantum well layer and a second conductive type semiconductor layer; a current spreading layer, formed on a part of the surface of the light-emitting epitaxial structure; an insulating layer, wrapping the sidewall of the current spreading layer, and the insulating layer has a series of patterned through holes structure; a metal layer is formed on the surface of the insulating layer, a part of the metal layer is in contact with the current spreading layer through a part of the through hole structure, and another part of the metal layer is in contact with the light emitting epitaxial structure through a part of the through hole structure.

Preferably, a local defect region is further included, which is located on a part of the second conductive type semiconductor layer and extends downward to the first conductive type semiconductor layer to form a mesa structure, and the mesa structure exposes sidewalls of the light emitting epitaxial structure.

Preferably, a first electrode is formed on the local defect region; and a second electrode is formed on the metal layer.

Preferably, the patterned through-hole structure of the insulating layer includes a first through-hole structure on the current spreading layer and a second through-hole structure on the light-emitting epitaxial structure.

Further, the first through hole structure is in an array type, and the second through hole structure is in a ring shape or a strip shape.

Preferably, the size of the first and second through hole structures is between 1 and 50 μm, preferably between 1 and 20 μm.

Preferably, the ratio of the number of the first through-hole structure to the second through-hole structure is between 5:1 and 50:1, and more preferably, the ratio of the number of the first through-hole structure to the second through-hole structure is between 10 : 1~30: 1.

Preferably, the total cross-sectional area of the first through-hole structure accounts for 3% to 50% of the ratio of the cross-sectional area of the light-emitting diode chip structure, and more preferably, the total cross-sectional area of the first through-hole structure accounts for the light-emitting diode chip structure. 5%~20% of the cross-sectional area ratio.

Preferably, the insulating layer covers the sidewalls of the light-emitting epitaxial structure.

Preferably, the insulating layer includes a low refractive index material layer.

Preferably, the insulating layer includes a distributed Bragg reflection layer.

Preferably, the metal layer has a multi-layer structure.

Preferably, the metal layer includes a metal reflection layer and a metal barrier layer.

The present invention also provides a method for fabricating a light-emitting diode chip structure, including the following process steps: (1) providing a substrate, and forming a light-emitting epitaxial structure on the substrate, wherein the light-emitting epitaxial structure includes a first layer stacked in sequence. a conductive type semiconductor layer, a quantum well layer and a second conductive type semiconductor layer; (2) forming a mesa structure on the light emitting epitaxial structure, the mesa structure exposing sidewalls of the light emitting epitaxial structure; (3) forming the light emitting epitaxial structure on the light emitting epitaxial structure A current spreading layer is formed on a part of the surface of the insulating layer; (4) an insulating layer is formed, wrapping the sidewall of the current spreading layer, and the insulating layer has a series of patterned via structures; (5) the patterned via structures are formed on the insulating layer. A metal layer is formed on the surface of the insulating layer, a part of the metal layer is in contact with the current spreading layer through a part of the through hole structure, and another part of the metal layer is in contact with the light emitting epitaxial structure through a part of the through hole structure.

Preferably, the step (2) includes: etching local defect regions in the light-emitting epitaxial structure to form a mesa structure.

Preferably, the patterned through-hole structure of the insulating layer in step (4) includes: a first through-hole structure located on the current spreading layer and a second through-hole structure located on the light-emitting epitaxial structure.

Further, the first through hole structure is in an array type, and the second through hole structure is in a ring shape or a strip shape.

Preferably, the size of the first and second through hole structures is between 1 and 50 μm, preferably between 1 and 20 μm.

Preferably, the ratio of the number of the first through-hole structure to the second through-hole structure is between 5:1 and 50:1, and more preferably, the ratio of the number of the first through-hole structure to the second through-hole structure is between 10 : 1~30: 1.

Preferably, the total cross-sectional area of the first through-hole structure accounts for 3% to 50% of the ratio of the cross-sectional area of the light-emitting diode chip structure, and more preferably, the total cross-sectional area of the first through-hole structure accounts for the light-emitting diode chip structure. 5%~20% of the cross-sectional area ratio.

Preferably, the insulating layer of the step (4) also covers the sidewall of the light-emitting epitaxial structure.

Preferably, the insulating layer includes a low refractive index material layer.

Preferably, the insulating layer includes a distributed Bragg reflection layer.

Preferably, the metal layer has a multi-layer structure.

Preferably, the metal layer includes a metal reflection layer and a metal barrier layer.

Preferably, the method further includes step (6): forming a first electrode on the local defect region; and forming a second electrode on the metal layer.

As described above, the light-emitting diode chip structure and the manufacturing method thereof of the present invention include the following beneficial effects:

(1) An omnidirectional reflective layer (ODR) structure is formed through a current spreading layer, an insulating layer (such as a low refractive index), and a metal reflective layer. The probability of light extraction outside the chip increases the brightness of the LED device;

(2) By forming a patterned first through hole structure on the insulating layer, the metal layer is communicated with the current spreading layer, thereby maintaining the voltage (VF) of the LED device from rising;

(3) By forming a patterned second through hole structure on the insulating layer, the metal layer is in direct contact with the light-emitting epitaxial structure (such as a P-GaN layer), thereby improving the adhesion of the metal layer (such as a metal reflective layer) to the insulating layer The problem of poor performance and enhance the reliability of LED devices.

Description of drawings

1 to 10 are schematic structural diagrams of each step of the manufacturing method of the light-emitting diode chip structure of the present invention, wherein, FIG. 4 is a cross-sectional view along the A-A direction of FIG. 5 (top view of the LED chip unit), and FIG. 8 is a diagram 7 is a partial enlarged schematic view of the structure of the dotted line frame, and FIG. 10 is a schematic view of the structure of the light-emitting diode chip of the present invention.

Component label description:

101 Substrate; 1021 Local defect region; 102 First conductivity type semiconductor layer; 103 Quantum well layer; 104 Second conductivity type semiconductor layer; 105 Current spreading layer; hole structure; 107 metal layer; 1071 metal reflection layer; 1072 metal protection layer; 108 second insulating layer; 1081 first through hole structure of the second insulating layer; 1082 second through hole structure of the second insulating layer; 109 first electrode; 110 the second electrode.

Detailed ways

The embodiments of the present invention are described below through specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

Please refer to Figure 1~Figure 10. It should be noted that the diagrams provided in this embodiment are only to illustrate the basic concept of the present invention in a schematic way, so the diagrams only show the components related to the present invention rather than the number, shape and the number of components in the actual implementation. For dimension drawing, the type, quantity and proportion of each component can be changed at will in actual implementation, and the component layout may also be more complicated.

As shown in FIG. 1 to FIG. 10 , this embodiment provides a method for fabricating a light-emitting diode chip structure, and the fabrication method includes the following steps:

As shown in FIG. 1 , process step (1) is first performed, a substrate 101 is provided, and a light-emitting epitaxial structure is formed on the substrate 101 , and the epitaxial structure includes a first conductive type semiconductor layer 102 and a quantum well stacked in sequence. layer 103 and the second conductive type semiconductor layer 104 .

The substrate 101 includes a planar sapphire substrate, a patterned sapphire substrate, a silicon substrate, a silicon carbide substrate, a gallium nitride substrate, a gallium arsenide substrate, and the like. In this embodiment, the substrate is selected as a patterned sapphire substrate.

As an example, an epitaxial structure is formed on the substrate 101 by an MOCVD process, and the epitaxial structure may include a buffer layer (not shown in the figure), a first conductivity type semiconductor layer 102 , a quantum well layer 103 and a second conductivity type A semiconductor layer 104, an electron blocking layer (EBL), etc., wherein the first conductivity type semiconductor layer 102 may be an N-type GaN layer, the quantum well layer 103 may be a GaN-based quantum well layer, and the second conductivity type The semiconductor layer 104 may be a P-type GaN layer. Of course, other types of epitaxial structures can also be selected according to actual requirements, and are not limited to the examples listed here.

As shown in FIG. 2 , the process step (2) is then performed, and a number of local defect regions 1021 are etched from top to bottom in the epitaxial structure to form a mesa structure, and the epitaxial structure is exposed on the mesa structure. Structure sidewalls, specifically, the mesa structure exposes the mesa of the first conductivity type semiconductor layer 102 and the sidewalls of the first conductivity type semiconductor layer 102 , the quantum well layer 103 and the second conductivity type semiconductor layer 104 .

For example, ICP etching or RIE etching process can be used to etch the mesa structure in the epitaxial structure, so that the mesa structure exposes the mesa surface of the first conductive type semiconductor layer 102 and the first conductive type semiconductor layer 102, quantum The sidewalls of the well layer 103 and the second conductive type semiconductor layer 104, the first conductive type semiconductor layer mesa is used for subsequent electrical connection of the first electrode. The number of local defect regions 1021 may be at least one, and may also be increased according to the structure, application, and area size of the LED chip, so that the number of local defect regions is equal to the number of second through hole structures to be fabricated subsequently. It should be noted that, when the LED structure is a vertical structure, it is also possible to form the first electrode on the backside of the first conductive type semiconductor layer 102 or the substrate 101 without forming a local defect region.

As shown in FIG. 3 , the process step (3) is then performed to form a current spreading layer 105 on a part of the surface of the light-emitting epitaxial structure.

For example, the current spreading layer 105 can be an ITO transparent conductive layer formed by evaporation or sputtering, or other materials, such as ZnO, graphene, etc., can be fused to make the current spreading layer and the light-emitting epitaxial structure The P-GaN layer forms an ohmic contact. The current spreading layer produced in the process step (4) also includes etching part of the current spreading layer through the yellow light and etching process, so that the current spreading layer located on the surface of the light-emitting epitaxial layer "shrinks", which is convenient for the subsequent insulating layer to be coated on the surface. sidewalls of the current spreading layer.

As shown in FIGS. 4 and 5 , the process step (4) is then performed to form an insulating layer 106 on the above structure, wrapping the sidewalls of the current spreading layer 105 and covering the sidewalls of the adjacent light-emitting epitaxial structures, The insulating layer 106 wrapping the sidewall of the current spreading layer 105 is mainly used to form an omnidirectional reflective layer (ODR) structure with the current spreading layer and the subsequently fabricated metal layer, covering the side of the adjacent light-emitting epitaxial structure. The insulating layer 106 of the wall is mainly used for electrical insulation; further, the insulating layer has a series of patterned via structures.

For example, a chemical vapor deposition process can be used to form an insulating layer 106 on a part of the surface of the epitaxial structure. The insulating layer 106 can be a low-refractive-index material, such as a silicon dioxide layer, magnesium fluoride, etc., or a high-refractive index material. The high-index material, such as titanium dioxide, etc., or the insulating layer can also be a distributed Bragg reflector (DBR) including high and low refractive index materials, and is not limited to the examples listed here. The patterned via structure is preferably formed by an etching process. For example, SiO ₂ low-refractive-index material is selected for the insulating layer, and the light output can be enhanced by the difference in the refractive index between the insulating layer of the low-refractive-index material and the ITO transparent conductive layer.

As an example, the patterned via structure includes: a first via structure 1061 on the current spreading layer and a second via structure 1062 on the light emitting epitaxial structure. Further, the first through hole structure is in an array type, and the second through hole structure is in a ring shape or a strip shape, and in this embodiment, it is preferably a closed ring shape. The size of the first and second through hole structures is between 1 and 50 μm, preferably between 1 and 20 μm. The ratio of the number of the first through-hole structure to the second through-hole structure is between 5:1 and 50:1. Preferably, the ratio of the first through-hole structure to the second through-hole structure is between 10:1 and 30. :1. Generally speaking, the number of the second through holes is equivalent to the number of local defect regions, and the shapes are similar. The total cross-sectional area of the first through hole structure accounts for 3% to 50% of the cross-sectional area ratio K of the light-emitting diode chip structure (LED chip unit), preferably 5% to 20%, more preferably 10%, if K If the value is too low, the contact area between the metal layer and the current spreading layer through the first through hole is too small, which is not conducive to the control voltage (VF). rate), the metal reflection layer forms the reflection effect of the omnidirectional reflection layer (ODR) structure.

As shown in FIG. 6 to FIG. 8 , the process step (5) is then performed to form a metal layer on the surface of the insulating layer with the patterned via structure, and a part of the metal layer communicates with the current through the first via structure 1061 The extension layer 105 is in contact, and another part of the metal layer is in contact with the light emitting epitaxial structure through the second through hole structure 1061, thereby improving the poor adhesion between the metal layer 107 and the insulating layer and enhancing the reliability of the LED device.

For example, an evaporation or sputtering process can be used to form the metal layer 107 on the surface of the insulating layer with the patterned through-hole structure, and the metal layer can include a multi-layer structure, such as a metal reflective layer 1071, a metal protective layer 1072, etc. , not limited to the examples listed here.

As an example, when Al or Ag highly reflective metal is used as the metal reflective layer, TiW, Cr, Pt, Ti, etc. are selected as the metal protective layer (Barrier), and the metal protective layer 1071 may be a completely wrapped metal reflective layer. 1071, used to protect the metal reflective layer.

As shown in FIGS. 9 and 10 , the process step ( 6 ) is performed next to form a first electrode 109 on the local defect region; and a second electrode 110 on the metal layer. Before fabricating the first and second electrodes, optionally, a second insulating layer 108 is formed on the structure fabricated in step (4).

As an example, a chemical vapor deposition process can be used to form the second insulating layer 108, and the second insulating layer 108 can be a low refractive index material, such as a silicon dioxide layer, magnesium fluoride, etc., or a high refractive index material, Such as titanium dioxide, etc., or the insulating layer may also be a distributed Bragg reflector (DBR), and is not limited to the examples listed here.

A first via structure 1081 of the second insulating layer and a second via structure 1082 of the second insulating layer are formed in the second insulating layer 108 by a photolithography process and an etching process. The first through hole structure 1081 is used as a reserved window for the first electrode, and the second through hole structure 1082 is used as a reserved window for the second electrode.

As shown in FIG. 10 , a first electrode 109 is then formed in the reserved window of the first electrode, and an N electrode is selected for the first electrode, so as to realize the electrical connection between the N electrode and the N-type GaN layer; A second electrode 110 is formed in the reserved window of the two electrodes, and a P electrode is selected as the second electrode, so as to realize the electrical connection between the P electrode and the metal layer, the current spreading layer, and the P-type GaN layer.

Finally, the substrate 101 is thinned and diced to obtain individual LED chips.

As shown in FIG. 10 , this embodiment further provides a light-emitting diode chip structure, the light-emitting diode chip structure includes: a substrate 101 , a light-emitting epitaxial structure, a local defect region 1021 , a current spreading layer 105 , an insulation having a through-hole structure layer 106 , metal layer 107 , second insulating layer 108 , first electrode 109 and second electrode 110 .

As shown in FIG. 10 , the substrate 101 includes a planar sapphire substrate, a patterned sapphire substrate, a silicon substrate, a silicon carbide substrate, a gallium nitride substrate, a gallium arsenide substrate, and the like. In this embodiment, the substrate 101 is selected as a patterned sapphire substrate.

As shown in FIG. 10 , the light-emitting epitaxial structure is located on the substrate 101 , and includes a first conductive type semiconductor layer 102 , a quantum well layer 103 and a second conductive type semiconductor layer 104 that are stacked in sequence.

For example, the first conductivity type semiconductor layer 102 may be an N-type GaN layer, the quantum well layer 103 may be a GaN-based quantum well layer 103, and the second conductivity type semiconductor layer 104 may be a P-type GaN layer. Of course, other types of epitaxial structures can also be selected according to actual requirements, and are not limited to the examples listed here.

As shown in FIG. 10 , the plurality of local defect regions 1021 are located on a part of the second conductive type semiconductor layer 104 and extend downward to the first conductive type semiconductor layer 102 to form a mesa structure, and the mesa structure is exposed There are sidewalls of the epitaxial structure. Specifically, the mesa structure exposes the mesa of the first conductive type semiconductor layer 102 and the sidewalls of the first conductive type semiconductor layer 102 , the quantum well layer 103 and the second conductive type semiconductor layer 104 .

As shown in FIG. 10 , the current spreading layer 105 is formed on a part of the surface of the light emitting epitaxial structure, and is bonded to a part of the surface of the light emitting epitaxial structure.

For example, the current spreading layer 105 may be an ITO transparent conductive layer, or other materials, such as ZnO, graphene, and the like. Structurally, it is preferable that the current spreading layer located on the surface of the light-emitting epitaxial layer "shrinks in", so that the subsequent insulating layer can be coated on the sidewall of the current spreading layer.

As shown in FIG. 10 , the insulating layer 106 wraps the sidewall of the current spreading layer 105 and covers the sidewall of the adjacent light-emitting epitaxial structure, wherein the insulating layer wraps the sidewall of the current spreading layer 105 The layer 106 is mainly used to form an omnidirectional reflection layer (ODR) structure with the current spreading layer and the metal layer, and the insulating layer 106 covering the sidewall of the adjacent light-emitting epitaxial structure is mainly used for electrical insulation; further, so The insulating layer has a series of patterned via structures.

For example, an insulating layer 106 with a patterned through hole structure is formed on a part of the surface of the epitaxial structure. The insulating layer 106 can be a low-refractive-index material, such as a silicon dioxide layer, magnesium fluoride, etc., or a high-refractive index material. The high-index material, such as titanium dioxide, etc., or the insulating layer can also be a distributed Bragg reflector (DBR) including high and low refractive index materials, and is not limited to the examples listed here. As an example, the patterned via structure includes: a first via structure 1061 on the current spreading layer and a second via structure 1062 on the light emitting epitaxial structure. Further, the first through hole structure is in an array type, and the second through hole structure is in a ring shape or a strip shape, and in this embodiment, it is preferably a closed ring shape. The size of the first and second through hole structures is between 1 and 50 μm, preferably between 1 and 20 μm. The ratio of the number of the first through-hole structure to the second through-hole structure is between 5:1 and 50:1. Preferably, the ratio of the first through-hole structure to the second through-hole structure is between 10:1 and 30. :1. Generally speaking, the number of the second through holes is equivalent to the number of local defect regions, and the shapes are similar. The total cross-sectional area of the first through hole structure accounts for 3% to 50% of the cross-sectional area ratio K of the light-emitting diode chip structure (LED chip unit), preferably 5% to 20%, more preferably 10%, if K If the value is too low, the contact area between the metal layer and the current spreading layer through the first through hole is too small, which is not conducive to the control voltage (VF). rate), the metal reflection layer forms the reflection effect of the omnidirectional reflection layer (ODR) structure.

As shown in FIG. 10 , the metal layer 107 is formed on the surface of the insulating layer 106 , the first through hole structure 1061 of a part of the metal layer is in contact with the current spreading layer 105 , and the other part of the metal layer passes through the second through hole The structure 1061 is in contact with the light-emitting epitaxial structure, thereby improving the problem of poor adhesion between the metal layer 107 and the insulating layer, and enhancing the reliability of the LED device.

For example, the metal layer 107 may include a multi-layer structure, such as a metal reflective layer 1071, a metal protection layer 1072, etc., and is not limited to the examples listed here. As an example, when Al or Ag highly reflective metal is used as the metal reflective layer, and a mirror (mirror) is used, the metal protective layer (Barrier) is selected from TiW alloy, etc. Metal reflective layer.

As shown in FIG. 10 , the second insulating layer 108 is formed on the metal layer 107 and the local defect region 1021 , and the first via structure 1081 of the second insulating layer and the second insulating layer are formed in the second insulating layer 108 . The second via structure 1082 . The first through hole structure 1081 is used as a reserved window for the first electrode, and the second through hole structure 1082 is used as a reserved window for the second electrode. The first electrode 109 is formed in the reserved window of the first electrode, and the first electrode selects the N electrode to realize the electrical connection between the N electrode and the N-type GaN layer; the second electrode 110 is formed on the second electrode In the reserved window, the second electrode selects the P electrode, so as to realize the electrical connection between the P electrode and the metal layer, the current spreading layer and the P-type GaN layer.

As an example, the second insulating layer 108 may be a low refractive index material, such as a silicon dioxide layer, magnesium fluoride, etc., or a high refractive index material, such as titanium dioxide, or the insulating layer may also be a distributed Bragg reflection layer (DBR), and is not limited to the examples listed here.

It should be noted that, according to needs, after the first and second electrodes are fabricated, a third insulating layer (not shown in the figure) can be formed on the first and second electrodes, and a through-hole structure can be formed. As the electrode window, finally the third and fourth electrodes are formed in the electrode window.

In this embodiment, an omnidirectional reflective layer (ODR) structure is formed by a current spreading layer, a low-refractive index insulating layer, and a metal reflective layer. The extraction probability can improve the brightness of the LED device; by forming a patterned first through hole structure on the insulating layer, the metal layer is connected with the current spreading layer, so as to maintain the voltage (VF) of the LED device from rising; by forming a patterned first through hole structure on the insulating layer With a patterned second through hole structure, the metal layer is in direct contact with the light-emitting epitaxial structure (such as the P-GaN layer), thereby improving the poor adhesion between the metal layer (such as the metal reflective layer) and the insulating layer, and enhancing the LED device reliability.

As described above, the light-emitting diode chip structure and the manufacturing method thereof of the present invention have the following beneficial effects:

The present invention forms an omnidirectional reflection layer (ODR) structure through a current spreading layer, a low refractive index insulating layer and a metal reflection layer, and its reflection effect is better than that of a conventional metal reflection layer or a distributed Bragg reflection layer structure, and enhances the external light extraction of the light-emitting diode chip. probability, and improve the brightness of the LED device; by forming a patterned first through hole structure on the insulating layer, the metal layer is connected to the current spreading layer, so as to maintain the voltage (VF) of the LED device from rising; The patterned second through-hole structure makes the metal layer in direct contact with the light-emitting epitaxial structure (such as the P-GaN layer), thereby improving the poor adhesion between the metal layer (such as the metal reflective layer) and the insulating layer, and enhancing the LED device. reliability. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial utilization value.

The light emitting diode chip structure and the manufacturing method thereof provided by the present invention are suitable for manufacturing a flip-chip structure LED device, and also suitable for manufacturing a vertical structure or a thin film structure or a high voltage structure LED device. The present invention is not only suitable for making visible light LEDs, but also suitable for making UV-LEDs and the like.

The above-mentioned embodiments merely illustrate the principles and effects of the present invention, but are not intended to limit the present invention. Anyone skilled in the art can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical idea disclosed in the present invention should still be covered by the claims of the present invention.

Claims (24)

1. a kind of LED chip construction characterized by comprising

Substrate；

Epitaxial light emission structure, be located at the substrate on, including stack gradually the first conductive type semiconductor layer, quantum well layer and The second conductive type semiconductor layer；

Current extending is formed in the part of the surface of the epitaxial light emission structure；

Insulating layer, wraps up the side wall of the current extending, and the insulating layer has a series of patterning through-hole structures；

Metal layer, is formed in the surface of insulating layer, and a part of metal layer is expanded by partial through holes structure and the electric current Layer contact is opened up, another part metal layer is contacted by partial through holes structure with the epitaxial light emission structure.

2. a kind of LED chip construction according to claim 1, it is characterised in that: the patterning of the insulating layer Through-hole structure includes the first through hole structure on the current extending and second on epitaxial light emission structure Through-hole structure.

3. a kind of LED chip construction according to claim 2, it is characterised in that: the first through hole structure is Array, second through-hole structure are cyclic annular or band-like.

4. a kind of LED chip construction according to claim 2, it is characterised in that: the first through hole structure with The ratio of number of second through-hole structure is between 5:1 ~ 50:1.

5. a kind of LED chip construction according to claim 2, it is characterised in that: the first through hole structure is horizontal Area of section summation accounts for the 3% ~ 50% of the cross-sectional area of the LED chip construction.

6. a kind of LED chip construction according to claim 1, it is characterised in that: the insulating layer is covered in institute State the side wall of epitaxial light emission structure.

7. a kind of LED chip construction according to claim 1, it is characterised in that: the insulating layer includes low folding Penetrate the material layer of rate.

8. a kind of LED chip construction according to claim 1, it is characterised in that: the insulating layer includes distribution Bragg reflecting layer.

9. a kind of LED chip construction according to claim 1, it is characterised in that: the metal layer is multilayer knot Structure.

10. a kind of LED chip construction according to claim 1, it is characterised in that: the metal layer includes gold Belong to reflecting layer and metal barrier.

11. a kind of LED chip construction according to claim 1, it is characterised in that: further include: local defect Area is located on the second conductive type semiconductor layer of part, and extends downward into the first conductive type semiconductor layer and form platform Face structure, the mesa structure exposing have epitaxial light emission structure side wall.

12. a kind of LED chip construction according to claim 11, it is characterised in that: the first electrode, shape Local defect area described in Cheng Yu；The second electrode is formed on the metal layer.

13. a kind of production method of LED chip construction, which is characterized in that including processing step:

(1) substrate is provided, forms epitaxial light emission structure on Yu Suoshu substrate, the epitaxial light emission structure includes stacking gradually The first conductive type semiconductor layer, quantum well layer and the second conductive type semiconductor layer；

(2) Yu Suoshu epitaxial light emission structure forms mesa structure, and the mesa structure exposing has epitaxial light emission structure side wall；

(3) part of the surface of Yu Suoshu epitaxial light emission structure forms current extending；

(4) insulating layer is formed, the side wall of the current extending is wrapped up, the insulating layer has a series of patterning through-hole knots Structure；

(5) metal layer is formed in the surface of insulating layer with patterning through-hole structure, a part of metal layer passes through portion Through-hole structure is divided to contact with the current extending, another part metal layer passes through partial through holes structure and the luminous epitaxy junction Structure contact.

14. a kind of production method of LED chip construction according to claim 13, it is characterised in that: the step Suddenly the patterning through-hole structure of the insulating layer of (4) includes: first through hole structure on the current extending and is located at The second through-hole structure on epitaxial light emission structure.

15. a kind of production method of LED chip construction according to claim 14, it is characterised in that: described One through-hole structure is array, and second through-hole structure is cyclic annular or band-like.

16. a kind of production method of LED chip construction according to claim 14, it is characterised in that: described The ratio of number of one through-hole structure and the second through-hole structure is between 5:1 ~ 50:1.

17. a kind of production method of LED chip construction according to claim 14, it is characterised in that: described One through-hole structure cross-sectional area summation accounts for the 3% ~ 50% of the cross-sectional area of the LED chip construction.

18. a kind of production method of LED chip construction according to claim 13, it is characterised in that: the step Suddenly the insulating layer of (4) is also covered in the side wall of the epitaxial light emission structure.

19. a kind of production method of LED chip construction according to claim 13, it is characterised in that: described exhausted Edge layer includes the material layer of low-refraction.

20. a kind of production method of LED chip construction according to claim 13, it is characterised in that: described exhausted Edge layer includes distributed Bragg reflecting layer.

21. a kind of production method of LED chip construction according to claim 13, it is characterised in that: the gold Category layer is multilayered structure.

22. a kind of production method of LED chip construction according to claim 13, it is characterised in that: the gold Belonging to layer includes metallic reflector and metal barrier.

23. a kind of production method of LED chip construction according to claim 13, it is characterised in that: the step Suddenly (2) include: that local defect area is etched in the epitaxial light emission structure, form mesa structure.

24. a kind of production method of LED chip construction according to claim 23, it is characterised in that: further include Step (6): Yu Suoshu local defect area makes first electrode；And in making second electrode on the metal layer.