CN110085664A - A kind of high-frequency rectification device of the intrinsic junction array of based superconductive - Google Patents
A kind of high-frequency rectification device of the intrinsic junction array of based superconductive Download PDFInfo
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Abstract
本发明公开了整流器件技术领域的一种基于超导本征结阵列的高频整流器件，旨在解决现有技术中利用二极管进行整流受工作频率和温度限制大的技术问题。所述器件包括与水平磁场平行的衬底基片，衬底基片上设有两电极，两电极之间设有若干组形成互补对称结构且上表面平行于衬底基片的正向不对称结面边界形状的BSCCO单晶和反向不对称结面边界形状的BSCCO单晶，其CuO层均平行于衬底基片，相邻正向不对称结面边界形状的BSCCO单晶与反向不对称结面边界形状的BSCCO单晶之间通过下层BSCCO单晶连接层或上层BSCCO单晶连接层连接，下层BSCCO单晶连接层和上层BSCCO单晶连接层均间隔设置。
The invention discloses a high-frequency rectification device based on a superconducting intrinsic junction array in the technical field of rectification devices, and aims to solve the technical problem in the prior art that the use of diodes for rectification is greatly limited by operating frequency and temperature. The device includes a substrate parallel to the horizontal magnetic field, two electrodes are arranged on the substrate, and several groups of forward asymmetric junctions forming a complementary symmetrical structure and whose upper surface is parallel to the substrate are arranged between the two electrodes. BSCCO single crystal with face boundary shape and BSCCO single crystal with reverse asymmetric junction boundary shape, the CuO layers are all parallel to the substrate substrate, adjacent BSCCO single crystal with forward asymmetric junction boundary shape and reverse asymmetry The BSCCO single crystals with symmetrical junction boundary shape are connected through the lower BSCCO single crystal connection layer or the upper BSCCO single crystal connection layer, and the lower BSCCO single crystal connection layer and the upper BSCCO single crystal connection layer are arranged at intervals.
Description
技术领域technical field
本发明涉及一种基于超导本征结阵列的高频整流器件，属于整流器件技术领域。The invention relates to a high-frequency rectifying device based on a superconducting intrinsic junction array, and belongs to the technical field of rectifying devices.
背景技术Background technique
整流是一种物理现象，指在相同驱动力推动下正向和逆向的电流幅值大小不同。在电力电子学方面，最常用的是利用二极管的单向导电性来进行整流，从而将交流电转变为直流电。Rectification is a physical phenomenon, which means that the magnitude of the forward and reverse currents is different under the same driving force. In power electronics, the most commonly used method is to use the unidirectional conductivity of diodes for rectification, thereby converting alternating current into direct current.
二极管能否正常整流，受工作频率、温度等因素制约。二极管中工作频率最高的是肖特基二极管，它是一种高速整流器件，最高可以达到100GHz；对于明显超过100GHz的交流输入，已有的二极管无法正常整流。各类非超导材料的二极管正常工作结温最低为-65℃左右，即208K；在温度明显低于此温度的低温环境下，比如深空环境，非超导材料二极管将无法正常工作。Whether the diode can rectify normally is restricted by factors such as operating frequency and temperature. Among the diodes, the Schottky diode has the highest operating frequency. It is a high-speed rectification device that can reach up to 100 GHz; for the AC input obviously exceeding 100 GHz, the existing diodes cannot normally rectify. The normal operating junction temperature of diodes of various non-superconducting materials is as low as -65°C, that is, 208K; in low-temperature environments where the temperature is significantly lower than this temperature, such as deep space environments, non-superconducting material diodes will not work properly.
发明内容SUMMARY OF THE INVENTION
本发明的目的在于克服现有技术中的不足，提供了一种基于超导本征结阵列的高频整流器件，包括与水平磁场平行的衬底基片，衬底基片上设有两电极，两电极之间设有若干组形成互补对称结构且上表面平行于衬底基片的正向不对称结面边界形状的BSCCO单晶和反向不对称结面边界形状的BSCCO单晶，正向不对称结面边界形状的BSCCO单晶和反向不对称结面边界形状的BSCCO单晶中的CuO层均平行于衬底基片，相邻正向不对称结面边界形状的BSCCO单晶与反向不对称结面边界形状的BSCCO单晶之间通过下层BSCCO单晶连接层或上层BSCCO单晶连接层连接，下层BSCCO单晶连接层和上层BSCCO单晶连接层均间隔设置。The purpose of the present invention is to overcome the deficiencies in the prior art, and provides a high-frequency rectifier device based on superconducting intrinsic junction arrays, including a substrate substrate parallel to the horizontal magnetic field, and the substrate substrate is provided with two electrodes, Between the two electrodes, there are several groups of BSCCO single crystals with positive asymmetric junction boundary shape and reverse asymmetric junction boundary shape that form a complementary symmetrical structure and whose upper surface is parallel to the substrate substrate. The CuO layer in the BSCCO single crystal with asymmetric junction boundary shape and the BSCCO single crystal with reverse asymmetric junction boundary shape is parallel to the substrate substrate, and the adjacent BSCCO single crystal with forward asymmetric junction boundary shape and The BSCCO single crystals with reverse asymmetric junction boundary shape are connected through the lower BSCCO single crystal connection layer or the upper BSCCO single crystal connection layer, and the lower BSCCO single crystal connection layer and the upper BSCCO single crystal connection layer are arranged at intervals.
进一步地，正向不对称结面边界形状的BSCCO单晶或／和反向不对称结面边界形状的BSCCO单晶厚度的取值范围是［0.5，10］μm。Further, the thickness range of the BSCCO single crystal with forward asymmetric junction boundary shape or/and the BSCCO single crystal with reverse asymmetric junction boundary shape is [0.5, 10] μm.
进一步地，下层BSCCO单晶连接层或／和上层BSCCO单晶连接层厚度，小于正向不对称结面边界形状的BSCCO单晶和反向不对称结面边界形状的BSCCO单晶的四分之一厚度。Further, the thickness of the lower BSCCO single crystal connection layer or/and the upper BSCCO single crystal connection layer is less than a quarter of that of the BSCCO single crystal with the forward asymmetric junction boundary shape and the BSCCO single crystal with the reverse asymmetric junction boundary shape One thickness.
进一步地，正向不对称结面边界形状的BSCCO单晶或／和反向不对称结面边界形状的BSCCO单晶结平面面积的取值范围是［50，1000］μm2。Furthermore, the value range of the junction plane area of the BSCCO single crystal with forward asymmetric junction boundary shape or/and BSCCO single crystal with reverse asymmetric junction boundary shape is [50, 1000] μm 2 .
进一步地，正向不对称结面边界形状的BSCCO单晶或／和反向不对称结面边界形状的BSCCO单晶结面形状包括等腰三角形。Further, the BSCCO single crystal with a forward asymmetric junction boundary shape or/and the BSCCO single crystal junction shape with a reverse asymmetric junction boundary shape include an isosceles triangle.
进一步地，水平磁场强度的取值范围是［0.01，1.0］T。Further, the value range of the horizontal magnetic field strength is [0.01, 1.0]T.
进一步地，衬底基片材质为MgO、硅、蓝宝石或LaAlO3。Further, the material of the substrate is MgO, silicon, sapphire or LaAlO 3 .
进一步地，电极材质为覆盖于下层BSCCO单晶连接层上的金属薄膜，所述金属包括金或银。Further, the electrode material is a metal thin film covering the lower BSCCO single crystal connection layer, and the metal includes gold or silver.
与现有技术相比，本发明所达到的有益效果：可以工作在稍高于零开尔文的极低温环境，整流频率范围从0Hz到150GHz左右，其最低工作温度和最高整流频率均超过了包括肖特基二极管在内的传统整流二极管指标范围，在超导集成电路、超导量子计算、深空极低温环境等方面具有广泛应用前景。Compared with the prior art, the beneficial effect achieved by the present invention is that it can work in an extremely low temperature environment slightly higher than zero Kelvin, the rectification frequency ranges from 0 Hz to 150 GHz, and its minimum operating temperature and maximum rectification frequency exceed The index range of traditional rectifier diodes, including tekyd diodes, has broad application prospects in superconducting integrated circuits, superconducting quantum computing, and deep space extremely low temperature environments.
附图说明Description of drawings
图1是本发明整体结构示意图；Fig. 1 is a schematic diagram of the overall structure of the present invention;
图2是本发明原理分析示意图；Fig. 2 is a schematic diagram of principle analysis of the present invention;
图3是本发明实施例的电路图；Fig. 3 is the circuit diagram of the embodiment of the present invention;
图4是本发明实施例的交流电波形图；Fig. 4 is the alternating current waveform diagram of the embodiment of the present invention;
图5是本发明实施例的示波器显示图。Fig. 5 is an oscilloscope display diagram of the embodiment of the present invention.
图中：1、衬底基片；2、正向不对称结面边界形状的BSCCO单晶；3、反向不对称结面边界形状的BSCCO单晶；4、下层BSCCO单晶连接层；5、上层BSCCO单晶连接层；6、电极；7、水平磁场；8、交流电源；9、超导本征结阵列整流器件；10、并联电阻；11、串联电阻；12、示波器。In the figure: 1. Substrate substrate; 2. BSCCO single crystal with forward asymmetric junction boundary shape; 3. BSCCO single crystal with reverse asymmetric junction boundary shape; 4. Lower BSCCO single crystal connection layer; 5 1. Upper BSCCO single crystal connection layer; 6. Electrode; 7. Horizontal magnetic field; 8. AC power supply; 9. Superconducting intrinsic junction array rectifier device; 10. Parallel resistance;
具体实施方式Detailed ways
下面结合附图对本发明作进一步描述。以下实施例仅用于更加清楚地说明本发明的技术方案，而不能以此来限制本发明的保护范围。The present invention will be further described below in conjunction with the accompanying drawings. The following examples are only used to illustrate the technical solution of the present invention more clearly, but not to limit the protection scope of the present invention.
需要说明的是，在本发明的描述中，术语“前”、“后”、“左”、“右”、“上”、“下”、“内”、“外”等指示的方位或位置关系为基于附图中所示的方位或位置关系，仅是为了便于描述本发明而不是要求本发明必须以特定的方位构造和操作，因此不能理解为对本发明的限制。本发明描述中使用的术语“前”、“后”、“左”、“右”、“上”、“下”指的是附图中的方向，术语“内”、“外”分别指的是朝向或远离特定部件几何中心的方向。It should be noted that, in the description of the present invention, the terms "front", "rear", "left", "right", "upper", "lower", "inner", "outer" and the like indicate orientations or positions The relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and does not require that the present invention must be constructed and operated in a specific orientation, and thus should not be construed as a limitation of the present invention. The terms "front", "rear", "left", "right", "upper" and "lower" used in the description of the present invention refer to the directions in the drawings, and the terms "inner" and "outer" refer to is the direction towards or away from the geometric center of a particular part.
如图2所示，是本发明原理分析示意图，在有外磁场情况下，外磁场容易从结的尖角处进入结形成约瑟夫森磁通并运动，而难以从结的长边处进入结形成磁通并运动，图中，等腰三角形结面中的磁通从顶部尖角运动到底部长边容易，而从底部长边运动到顶部尖角困难，从宏观上表现为，结正负两方向的超导临界电流不对称，一个方向的超导临界电流Ic1很大，另一方向的超导临界电流Ic2很小，从而实现对电流的整流效果；As shown in Figure 2, it is a schematic diagram of the principle analysis of the present invention. In the case of an external magnetic field, the external magnetic field easily enters the junction from the sharp corner of the junction to form a Josephson flux and moves, but it is difficult to enter the junction from the long side of the junction to form The magnetic flux moves together. In the figure, it is easy for the magnetic flux in the isosceles triangle junction to move from the top corner to the bottom long side, but it is difficult to move from the bottom long side to the top corner. Macroscopically, the junction is positive and negative. The superconducting critical current is asymmetrical, the superconducting critical current Ic 1 in one direction is very large, and the superconducting critical current Ic 2 in the other direction is very small, so as to realize the rectification effect on the current;
超导约瑟夫森结磁通整流器件的最高整流频率与结中约瑟夫森磁通的最快运动速度成正比，约瑟夫森结中磁通的运动速度最快可以达到超导结辐射电磁波的相速度（Swihartvelocity），对于高温超导本征结而言，由于其约瑟夫森等离子振荡频率高，电磁波辐射的相速度也会高，因而在理论上，高温超导本征结磁通整流器件的最高整流频率可达150GHz。The highest rectification frequency of the superconducting Josephson junction flux rectification device is proportional to the fastest moving speed of the Josephson magnetic flux in the junction, and the fastest moving speed of the magnetic flux in the Josephson junction can reach the phase velocity of the electromagnetic wave radiated by the superconducting junction ( Swihartvelocity), for high-temperature superconducting intrinsic junctions, due to the high Josephson plasma oscillation frequency, the phase velocity of electromagnetic wave radiation will also be high, so in theory, the highest rectification frequency of high-temperature superconducting intrinsic junction flux rectification devices Up to 150GHz.
如图1所示，是本发明整体结构示意图，一种基于超导本征结阵列的高频整流器件，包括与水平磁场7平行的衬底基片1，衬底基片1材质可选用MgO、硅、蓝宝石或LaAlO3，其表面覆盖有一层绝缘胶。As shown in Figure 1, it is a schematic diagram of the overall structure of the present invention, a high-frequency rectifier device based on a superconducting intrinsic junction array, including a substrate substrate 1 parallel to the horizontal magnetic field 7, and the material of the substrate substrate 1 can be MgO , silicon, sapphire or LaAlO 3 , whose surface is covered with a layer of insulating glue.
衬底基片1上设有两电极6，两电极6之间设有若干组正向不对称结面边界形状的BSCCO单晶2和反向不对称结面边界形状的BSCCO单晶3，一组正向不对称结面边界形状的BSCCO单晶2和反向不对称结面边界形状的BSCCO单晶3，包括一个正向不对称结面边界形状的BSCCO单晶2和一个反向不对称结面边界形状的BSCCO单晶3，两者间形成互补对称结构，即：厚度、形状、面积均相同，相对位置水平旋转180°；Two electrodes 6 are arranged on the substrate substrate 1, and several groups of BSCCO single crystals 2 with forward asymmetric junction boundary shapes and BSCCO single crystals 3 with reverse asymmetric junction boundary shapes are arranged between the two electrodes 6. A set of BSCCO single crystal 2 with forward asymmetric junction boundary shape and BSCCO single crystal 3 with reverse asymmetric junction boundary shape, including a BSCCO single crystal 2 with forward asymmetric junction boundary shape and a reverse asymmetric The BSCCO single crystal 3 with the boundary shape of the junction forms a complementary symmetrical structure, that is, the thickness, shape, and area are all the same, and the relative position is horizontally rotated by 180°;
正向不对称结面边界形状的BSCCO单晶2和反向不对称结面边界形状的BSCCO单晶3中的CuO层，即BSCCO单晶本征结的结面，均平行于衬底基片1和正向不对称结面边界形状的BSCCO单晶2和反向不对称结面边界形状的BSCCO单晶3的上表面；本实施例采用的是等腰三角形结面形状的BSCCO单晶，但不局限于等腰三角形结面形状，只需满足垂直于水平磁场7方向上的BSCCO单晶结面边界呈明显不对称即可，例如，可以将等腰三角形结面BSCCO单晶换成单边锯齿边形BSCCO单晶，或者将等腰三角形的顶角用单边锯齿边形顶部的多个锯齿尖角来代替；The CuO layer in the BSCCO single crystal 2 with the forward asymmetric junction boundary shape and the BSCCO single crystal 3 with the reverse asymmetric junction boundary shape, that is, the junction plane of the intrinsic junction of the BSCCO single crystal, is parallel to the substrate 1 and the upper surface of the BSCCO single crystal 2 of the positive asymmetric junction boundary shape and the BSCCO single crystal 3 of the reverse asymmetric junction boundary shape; what this embodiment adopts is the BSCCO single crystal of the isosceles triangular junction shape, but It is not limited to the shape of the isosceles triangular junction, it only needs to meet the obvious asymmetry of the BSCCO single crystal junction boundary in the direction perpendicular to the horizontal magnetic field 7, for example, the isosceles triangular junction BSCCO single crystal can be replaced by a single side Zigzag BSCCO single crystal, or replace the vertex of the isosceles triangle with multiple jagged corners on the top of the unilateral zigzag;
正向不对称结面边界形状的BSCCO单晶2和反向不对称结面边界形状的BSCCO单晶3的厚度均可以调节，其最小厚度不宜低于0.5μm，因为厚度太薄会大幅降低器件的牢固程度，使器件正常工作寿命显著减少，同时也会增加器件的制备难度；同时，其最大厚度不宜高于10μm，因为厚度太厚会显著增加BSCCO本征结内部的热效应，导致BSCCO单晶中不同CuO层温度不一致，继而引发结电压和电流的紊乱；The thickness of BSCCO single crystal 2 with forward asymmetric junction boundary shape and BSCCO single crystal 3 with reverse asymmetric junction boundary shape can be adjusted, and the minimum thickness should not be less than 0.5 μm, because too thin thickness will greatly reduce the device The firmness of the device will significantly reduce the normal working life of the device, and it will also increase the difficulty of device preparation; at the same time, its maximum thickness should not be higher than 10 μm, because too thick thickness will significantly increase the thermal effect inside the BSCCO intrinsic junction, resulting in BSCCO single crystal The temperature of different CuO layers is inconsistent, which then leads to the disorder of junction voltage and current;
正向不对称结面边界形状的BSCCO单晶2和反向不对称结面边界形状的BSCCO单晶3的结平面面积均可以调节，其最小不宜低于50μm2，因为结面积过小会导致结电压和电流的幅值过小，导致器件整流效果不明显；同时，其最大面积不宜高于1000μm2，因为结面积过大会导致单晶结面边界不对称势垒效应的减弱，结面边界无法影响结面中央部位的磁通运动。The junction plane area of BSCCO single crystal 2 with forward asymmetric junction boundary shape and BSCCO single crystal 3 with reverse asymmetric junction boundary shape can be adjusted, and the minimum junction area should not be lower than 50 μm 2 , because too small junction area will lead to If the amplitude of the junction voltage and current is too small, the rectification effect of the device is not obvious; at the same time, its maximum area should not be higher than 1000μm 2 , because the large junction area will weaken the asymmetric barrier effect of the single crystal junction boundary, and the junction boundary There is no way to affect the flux movement in the center of the junction.
相邻正向不对称结面边界形状的BSCCO单晶2与反向不对称结面边界形状的BSCCO单晶3之间，通过下层BSCCO单晶连接层4和上层BSCCO单晶连接层5中的一项连接，下层BSCCO单晶连接层4和上层BSCCO单晶连接层5均为间隔设置；下层BSCCO单晶连接层4和上层BSCCO单晶连接层5的厚度均可以调节，但需小于正向不对称结面边界形状的BSCCO单晶2和反向不对称结面边界形状的BSCCO单晶3的四分之一厚度，因为超过四分之一厚度会减弱本征结不对称边界的整流效果。Between the BSCCO single crystal 2 with the forward asymmetric junction boundary shape and the BSCCO single crystal 3 with the reverse asymmetric junction boundary shape, through the lower BSCCO single crystal connection layer 4 and the upper BSCCO single crystal connection layer 5 One connection, the lower BSCCO single crystal connection layer 4 and the upper BSCCO single crystal connection layer 5 are set at intervals; the thickness of the lower BSCCO single crystal connection layer 4 and the upper BSCCO single crystal connection layer 5 can be adjusted, but it needs to be less than the forward A quarter thickness of BSCCO single crystal 2 with asymmetric junction boundary shape and BSCCO single crystal 3 with reverse asymmetric junction boundary shape, because more than a quarter thickness weakens the rectifying effect of the intrinsic junction asymmetric boundary .
两电极6材质为覆盖于下层BSCCO单晶连接层4上的金属薄膜，所述金属包括金或银。The two electrodes 6 are made of a metal film covering the lower BSCCO single crystal connection layer 4, and the metal includes gold or silver.
水平磁场7可由亥姆霍兹线圈或大型马蹄磁铁等获得，水平磁场7大小可以调节，其最小不宜低于0.01T，因为磁场太小会导致本征结中磁通数目太少，磁通运动整流效果不明显；其最大不宜高于1.0T，因为磁场太大会导致本征结中的磁通数目过多，磁通与磁通之间的相互作用力太强，削弱了结边界对结中磁通运动的影响作用。The horizontal magnetic field 7 can be obtained by a Helmholtz coil or a large horseshoe magnet, etc. The size of the horizontal magnetic field 7 can be adjusted, and its minimum should not be lower than 0.01T, because too small a magnetic field will cause too little flux in the intrinsic junction, and the flux movement The rectification effect is not obvious; its maximum should not be higher than 1.0T, because too large a magnetic field will lead to too many magnetic fluxes in the intrinsic junction, and the interaction force between the magnetic flux and the magnetic flux is too strong, which weakens the junction boundary to the junction. The effect of movement.
下面结合实施例对本发明作进一步描述，实例中采用的是等腰三角形结面形状的BSCCCO单晶整流器件。The present invention will be further described below in conjunction with the examples. In the example, a BSCCCO single crystal rectifier device in the shape of an isosceles triangle junction is used.
如图3所示，是本发明实施例的电路图，包括超导本征结阵列整流器件9，以及与其并联的并联电阻10和与其串联的串联电阻11，并联电阻10和串联电阻11均为10欧姆，并联电阻10两端连有示波器12，交流电源8发出频率约为50Hz的正弦电流Is，最大电流振幅为1mA，如图4所示，是本发明实施例的交流电波形图；As shown in Figure 3, it is a circuit diagram of an embodiment of the present invention, including a superconducting intrinsic junction array rectifier device 9, and a parallel resistor 10 connected in parallel with it and a series resistor 11 connected in series with it, and both the parallel resistor 10 and the series resistor 11 are 10 Ohm, the two ends of parallel resistance 10 are connected with oscilloscope 12, and AC power source 8 sends the sinusoidal current Is of frequency about 50Hz, and the maximum current amplitude is 1mA, as shown in Figure 4, is the alternating current waveform figure of the embodiment of the present invention;
超导本征结阵列整流器件9放置于77K液氮中，外加由通电螺线圈提供的水平磁场7，其大小约为0.01T；等腰三角形结面形状的BSCCO单晶厚度为1μm，底边长度为20μm，顶角角度为40°；在77K温度下，超导本征结阵列整流器件9的超导临界电流在正负电流下呈明显不对称性，正电流时超导临界电流Ic1为400μA，负电流时超导临界电流Ic2为1200μA；The superconducting intrinsic junction array rectifier device 9 is placed in 77K liquid nitrogen, and the horizontal magnetic field 7 provided by the electrified solenoid coil is applied, and its size is about 0.01T; the thickness of the BSCCO single crystal in the shape of an isosceles triangle junction is 1 μm, and the bottom The length is 20 μm, and the vertex angle is 40°; at a temperature of 77K, the superconducting critical current of the superconducting intrinsic junction array rectifier device 9 is obviously asymmetrical under positive and negative currents, and the superconducting critical current Ic 1 is 400μA, and the superconducting critical current Ic 2 is 1200μA at negative current;
在正电流部分，当电流小于400μA，即小于Ic1时，本征结处于超导状态，电阻值为零，并联电阻10由于本征结零电阻而被短路，无电流Id流过，示波器12显示无电压值或电压值为零；当电流值大于400μA时，本征结处于不超导状态，具有一定电阻值称为约瑟夫森结正常态电阻。此时并联电阻10上有电流Id流过，电流Id大小随交流电源8发出电流而改变，示波器12显示有电压。In the positive current part, when the current is less than 400μA, that is, less than Ic 1 , the intrinsic junction is in a superconducting state, and the resistance value is zero, and the parallel resistor 10 is short-circuited due to the intrinsic junction zero resistance, and no current I d flows, the oscilloscope 12 shows no voltage value or zero voltage value; when the current value is greater than 400μA, the intrinsic junction is in a non-superconducting state, and a certain resistance value is called the normal state resistance of the Josephson junction. At this time, a current Id flows through the parallel resistor 10, and the magnitude of the current Id changes with the current generated by the AC power supply 8, and the oscilloscope 12 displays a voltage.
在负电流部分，由于交流电源8发出电流最大为1000μA，其小于Ic2＝1200μA，因而超导结始终处于超导状态，电阻为零，此时并联电阻10由于被短路而无电流Id流过，示波器12显示无电压值或电压值为零。In the negative current part, since the maximum current from the AC power source 8 is 1000 μA, which is less than Ic 2 =1200 μA, the superconducting junction is always in the superconducting state, and the resistance is zero. At this time, the parallel resistor 10 is short-circuited and no current I d flows However, the oscilloscope 12 shows no voltage value or a voltage value of zero.
更具体地，如图5所示，是本发明实施例的示波器显示图，并联电阻10上只有正电流部分流过的Id分量，从而形成了对输入交变电流Is的整流效果。More specifically, as shown in FIG. 5, which is an oscilloscope display diagram of the embodiment of the present invention, only the Id component of the positive current part flows through the parallel resistor 10, thereby forming a rectification effect on the input alternating current Is.
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明技术原理的前提下，还可以做出若干改进和变形，这些改进和变形也应视为本发明的保护范围。The above are only the preferred embodiments of the present invention. It should be pointed out that for those skilled in the art, without departing from the technical principle of the present invention, several improvements and modifications can also be made. These improvements and modifications It should also be regarded as the protection scope of the present invention.
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| US6605225B1 (en) * | 1999-01-26 | 2003-08-12 | Japan Science And Technology Corporation | Method and apparatus for fabricating three dimensional element from anisotropic material |
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