CN110079859A - A kind of stripping means of SiC base GaN epitaxy piece - Google Patents
A kind of stripping means of SiC base GaN epitaxy piece Download PDFInfo
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- CN110079859A CN110079859A CN201910351522.9A CN201910351522A CN110079859A CN 110079859 A CN110079859 A CN 110079859A CN 201910351522 A CN201910351522 A CN 201910351522A CN 110079859 A CN110079859 A CN 110079859A
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- 238000000407 epitaxy Methods 0.000 title claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 239000010410 layer Substances 0.000 claims abstract description 59
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000001301 oxygen Substances 0.000 claims abstract description 26
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 26
- -1 oxonium ion Chemical class 0.000 claims abstract description 18
- 239000002344 surface layer Substances 0.000 claims abstract description 15
- 238000002347 injection Methods 0.000 claims description 16
- 239000007924 injection Substances 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 8
- 229910052681 coesite Inorganic materials 0.000 claims description 7
- 229910052906 cristobalite Inorganic materials 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052682 stishovite Inorganic materials 0.000 claims description 7
- 229910052905 tridymite Inorganic materials 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 238000010884 ion-beam technique Methods 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 4
- 239000005416 organic matter Substances 0.000 claims description 4
- 230000008439 repair process Effects 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 89
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 88
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 29
- 229910002601 GaN Inorganic materials 0.000 description 28
- 238000000034 method Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 229910018540 Si C Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 125000001339 silanediyl group Chemical group [H][Si]([H])(*)* 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a kind of stripping means of SiC base GaN epitaxy piece, specifically includes the following steps: step S1: by injecting oxonium ion, oxygen layer and SiO are formed under SiC substrate surface layer2, meanwhile, reaction forms bubble layer；Step S2: GaN epitaxy is generated on SiC substrate surface layer；Step S3: being cut by laser along bubble layer, obtains SiC base GaN epitaxy piece.The present invention can quickly and effectively remove SiC substrate, to recycle SiC substrate, improve the utilization rate of SiC substrate.
Description
Technical field
The present invention relates to technical field of semiconductors, refer in particular to a kind of stripping means of SiC base GaN epitaxy piece.
Background technique
SiC material has good physical and chemical properties, as stable chemical performance, thermal expansion coefficient are small, corrosion-resistant, anti-
The series of advantages such as abrasion, high intensity, high rigidity, thus in fields such as mechano-electronic, composite material, aerospaces with wide
Application prospect.In particular with the rapid development of modernization of weaponry, the continuous development of various advanced technologies, to resistance to height
The demand of the high performance electronics of the adverse circumstances such as temperature, Flouride-resistani acid phesphatase work is increasingly urgent to, and conventional semiconductor devices are in Gao Gong
Rate, high-temperature field have shown many limitations.Therefore, it is with wide bandgap semiconductors such as silicon carbide (SiC), gallium nitride (GaN)
The third generation semiconductor material of representative comes into being.Semiconductor material with wide forbidden band is with forbidden bandwidth is big, disruptive field intensity is high, saturation
The advantages that electron transfer rate is high, thermal conductivity is high, dielectric constant is small, Radiation hardness is strong and good chemical stability, device
Part power density is 10 times of Si, GaAs power density or more, is very suitable to prepare HIGH-POWERED MICROWAVES device.It is partly led using such
The device of body material manufacture has the advantages that following uniqueness: operating temperature is high, operating temperature range is wide；Operating voltage height, power
Density is high, cell power is big；Added efficiency is high；Noise coefficient index with great competitiveness；Impedance is high, is convenient for broadband
Match；Radiation hardness is strong.
But generally acknowledged typical difficult-to-machine material is become due to the particularity of SiC crystal structure.SiC is as C and Si
Uniquely stable compound, lattice structure are made of two sublattice of dense arrangement, each Si(or C) atom and periphery wrap
The C(or Si enclosed) atom by orientation strong tetrahedron SP3Bond is closed, although the tetrahedral bonds of SiC are very strong, fault forms energy
Amount is but very low, this feature determines the polytype phenomenon of SiC, and the stacking order of the C/Si diatomic layer of every kind of polytype is not
Together, lead to the growth course and its complexity of SiC single crystal, the final crystal quality of many effects of process parameters, which results in SiC linings
Bottom is all very expensive, and chip researches and develops higher cost.
Because SiC wafer process that angularity and total thickness variations are limited and SiC base GaN epitaxy growth course in temperature and
The influence of stress, SiC substrate demand at least 500um, but in practical application, thickness is insufficient in practical applications for SiC base GaN device
120um removes extra SiC substrate with grinding, 400um SiC substrate is caused to waste during traditional handicraft.
Then dealer studies this, such as the SiC substrate of the patent CN107326435A growth GaN announced a kind of
Stripping means forms hydrogen ion layer by injecting hydrogen ion under SiC substrate surface layer, so that the hydrogen ion under SiC substrate surface layer
Layer forms hydrogen layer in hydrogen-rich state, and method is simple and formation hydrogen layer is stablized.But such method has the drawback that
H2Si -- H bond is formed after injection, in growth 900 DEG C of GAN(atmosphere or more) during Si -- H bond will disconnect, SiC lattice can be easy
To reparation, subsequent high temperature tempering and laser lift-off will increase difficulty.
Therefore, how quickly and effectively to remove SiC substrate and obtain SiC base GaN epitaxy piece, while SiC substrate can be improved again
Utilization rate, be a technical problem to be solved urgently.
Summary of the invention
It, can be quick technical problem to be solved by the present invention lies in a kind of stripping means of SiC base GaN epitaxy piece is provided
Effective removing SiC substrate improves the utilization rate of SiC substrate to recycle SiC substrate.
In order to solve the above technical problems, the technical solution of the invention is as follows:
A kind of stripping means of SiC base GaN epitaxy piece, specifically includes the following steps:
Step S1: by injecting oxonium ion, oxygen layer and SiO are formed under SiC substrate surface layer2, meanwhile, reaction forms bubble layer；
Step S2: GaN epitaxy is generated on SiC substrate surface layer；
Step S3: being cut by laser along bubble layer, obtains SiC base GaN epitaxy piece.
Further, oxygen layer is formed at 50 um under SiC substrate surface layer.
Further, in step S1, before injecting oxonium ion, cvd nitride silicon dielectric layer on sic substrates.
Further, dielectric layer with a thickness of 300-1000nm.
Further, in step S1, under SiC substrate formed oxygen layer before by SiC substrate pass sequentially through N methyl pyrrolidone,
Isopropanol and deionized water are respectively cleaned by ultrasonic 5-10min, are then dried by nitrogen, remove the organic matter on SiC substrate surface.
Further, in step S1, under conditions of room temperature, the oxygen ion beam that energy is 300 ~ 500keV magnitude is incident on
In SiC substrate surface layer, injection rate is 1E14 ~ 1E20 ions/cm2, injection direction from top to bottom tilts 7 °.
Further, in step S1, the SiC substrate for injecting oxonium ion is placed under nitrogen atmosphere, is moved back at 850 DEG C -950 DEG C
Fiery 5-15min, to repair ion implantation damage, oxonium ion can form oxygen-enriched state under surface of SiC to form oxygen layer.
Further, in step S1, bubble layer is with a thickness of 40-200nm.
Further, the SiC substrate after SiC base GaN epitaxy piece that step S3 is obtained and removing is put down by chemical machinery
Smoothization polishes.
Further, bubble layer COXBubble and SiO2Bubble.
The present invention is the injection by oxonium ion, forms CO under SiC substrate surfaceXAnd SiO2Bubble layer, extension is raw
It is cut by laser after the completion of long, is finally peeled away SiC substrate, obtains SiC base GaN epitaxy piece.The invention has the following advantages that
1, it will form SiO after O +ion implanted SiC substrate2, SiO2Molecular link stablize, and the Si-C key of injection region is broken
It opens, during high annealing, stress relationship SiO2Bubble layer aggravation, so that subsequent removing is easier；
2, simple process of the invention, it is easy to operate, remaining SiC substrate can be effectively recycled, to improve the use of SiC substrate
Rate.
Detailed description of the invention
Fig. 1 is O +ion implanted structural schematic diagram of the invention；
Fig. 2 is laser cutting position structural schematic diagram of the invention；
Fig. 3 is SiC substrate separated structure schematic diagram of the invention.
Specific embodiment
The invention will be further described in the following with reference to the drawings and specific embodiments.Disclosed is a kind of SiC
The stripping means of base GaN epitaxy piece, as shown in Figure 1, Figure 2 and Figure 3, specifically includes the following steps: step S1: by injection oxygen from
Son forms oxygen layer and SiO under SiC substrate surface layer2, meanwhile, reaction forms bubble layer；Step S2: it is generated on underlayer surface
GaN epitaxy；Step S3: being cut by laser along bubble layer, obtains SiC base GaN epitaxy piece.Remaining SiC substrate is recyclable
It utilizes, to improve the utilization rate of SiC substrate.
Further, in step S1, before injecting oxonium ion, cvd nitride silicon dielectric layer on sic substrates, for protecting
SiC substrate interface.Thickness of dielectric layers is 300-1000nm, and silicon nitride medium layer is too thin to be unable to effective protection interface, too thick then shadow
Ring injection effective depth.
Further, in step S1, under SiC substrate formed oxygen layer before by SiC substrate pass sequentially through N methyl pyrrolidone,
Isopropanol and deionized water are respectively cleaned by ultrasonic 5-10min, are then dried by nitrogen, are placed in optical microphotograph under the microscope, see table
Whether face is clean, and the organic matter on SiC substrate surface is removed using this processing method.
Further, in step S1, at room temperature, the oxygen ion beam that energy is 300 ~ 500keV magnitude is incident on
In SiC substrate surface layer, injection rate is 1E14 ~ 1E20 ions/cm2, injection direction from top to bottom tilts 7 °, and injection phase is such as
Shown in Fig. 1.
Further, in step S1, the SiC substrate for injecting oxonium ion is placed under nitrogen atmosphere, is moved back at 850 DEG C -950 DEG C
Fiery 5-15min, to repair ion implantation damage, oxonium ion can form oxygen-enriched state under surface of SiC, to form oxygen layer.
Further, in step S1, bubble layer is with a thickness of 40-200nm.If bubble layer thickness is smaller, it is unfavorable for being cut by laser,
If bubble layer thickness is larger, may split in high annealing, therefore the present invention selects 40-200nm, effect is good.
Further, the SiC base GaN epitaxy piece that step S3 is obtained is put down by chemical-mechanical planarization removal, is conducive to SiC base
The subsequent job step of GaN epitaxy piece.SiC substrate after step S3 removing is put down by chemical-mechanical planarization removal, is conducive to
Recycling utilizes again.
Illustrate the present invention by taking millimeter wave SiC base GaN epitaxy piece as an example below.
Step S1: by injecting oxonium ion, oxygen layer and SiO are formed under SiC substrate surface layer2, meanwhile, reaction forms bubble
Layer.
It is formed under SiC substrate before oxygen layer and SiC substrate is passed sequentially through into N methyl pyrrolidone, isopropanol and deionized water
Each ultrasonic cleaning 5-10min, is then dried by nitrogen, to remove the organic matter on SiC substrate surface.Before injecting oxonium ion,
Cvd nitride silicon dielectric layer on sic substrates, for protecting SiC substrate interface.At room temperature, by energy be 300 ~
The oxygen ion beam of 500keV magnitude is incident in SiC substrate surface layer, and injection rate is 1E14 ~ 1E20 ions/cm2, injection direction
From top to bottom tilt 7 °.The SiC substrate for completing injection is subjected to BOE(buffered oxide etch liquid) 5min is impregnated, remove surface
Silicon nitride medium layer.
On the one hand, the SiC substrate for injecting oxonium ion is placed under nitrogen atmosphere, anneal 5- at 850 DEG C -950 DEG C
15min, to repair ion implantation damage, oxonium ion can form oxygen-enriched state under surface of SiC, so that oxygen layer is formed, SiC substrate
In oxygen layer can with SiC substrate formed COXBubble layer.
On the other hand, it will form SiO after O +ion implanted SiC substrate2, SiO2Molecular link it is more stable, and will note
The Si-C key for entering area disconnects, during high annealing, stress relationship SiO2Bubble layer aggravation, so that subsequent removing is more held
Easily.
Step S2: GaN epitaxy is generated on underlayer surface.
GaN epitaxy is generated on the SiC substrate surface layer for forming oxygen layer using MOCVD in the present embodiment, includes following work
Skill step: growing GaN single crystal with MOCVD method on sic substrates, uses air pressure for 4.5 × 104-5.5 × 104Pa, by hydrogen
Carry trimethyl gallium (TMGa) and ammonia (NH3) entering reaction chamber, SiC substrate temperature is 950-1050 DEG C；Grown epitaxial layer
With a thickness of 1 ~ 2um, it is sequentially completed AlN nucleating layer, AlGaN buffer layer, GaN channel layer, AlGaN potential barrier and GaN cap.Together
When, the SiO by the hot atmosphere of more than 1,000 degree, in SiC substrate2And COXBubble layer can be more stable；
Step S3: being cut by laser along bubble layer, obtains SiC base GaN epitaxy piece, to realize that SiC substrate is removed.
It is cut by laser at position as shown by the dash line in figure 2, SiC base GaN epitaxy piece is obtained, to realize SiC substrate
Removing reduces extension preparation cost as shown in figure 3, the SiC substrate under removing can be used to reuse after polishing.In addition,
SiC base GaN epitaxy piece after light is cut passes through chemical mechanical grinding, makes back side roughness Ra < 0.1um, can put into life
It produces and uses.
This method is simple and fast, has obtained 50um SiC base GaN epitaxy piece, saves the chip dorsal segment grinding technics time, again
Avoid the waste of SiC substrate material.Using SiC substrate and oxonium ion special reaction occurs for the present invention, so that SiC base GaN
The removing of epitaxial wafer is more easier, this is the same effect that hydrogen ion or other materials substrate can not be obtained using this method.
The foregoing is only a preferred embodiment of the present invention, but the design concept of the present invention is not limited to this,
Anyone skilled in the art in the technical scope disclosed by the present invention, using this design carries out the present invention non-
Substantive change belongs to the behavior for invading the scope of the present invention.
Claims (10)
1. a kind of stripping means of SiC base GaN epitaxy piece, it is characterised in that: specifically includes the following steps: step S1: passing through note
Enter oxonium ion, forms oxygen layer and SiO under SiC substrate surface layer2, meanwhile, reaction forms bubble layer；Step S2: in SiC substrate table
GaN epitaxy is generated on layer；Step S3: being cut by laser along bubble layer, obtains SiC base GaN epitaxy piece.
2. a kind of stripping means of SiC base GaN epitaxy piece according to claim 1, it is characterised in that: in SiC substrate table
Oxygen layer is formed at lower 50 um of layer.
3. a kind of stripping means of SiC base GaN epitaxy piece according to claim 1, it is characterised in that: in step S1,
Before injecting oxonium ion, cvd nitride silicon dielectric layer on sic substrates.
4. a kind of stripping means of SiC base GaN epitaxy piece according to claim 3, it is characterised in that: thickness of dielectric layers is
300-1000nm。
5. a kind of stripping means of SiC base GaN epitaxy piece according to claim 1, it is characterised in that: in step S1,
SiC substrate N methyl pyrrolidone, isopropanol and deionized water is passed sequentially through before formation oxygen layer under SiC substrate to be respectively cleaned by ultrasonic
Then 5-10min is dried by nitrogen, remove the organic matter on SiC substrate surface.
6. a kind of stripping means of SiC base GaN epitaxy piece according to claim 1, it is characterised in that: in step S1, room
Under conditions of temperature, the oxygen ion beam that energy is 300 ~ 500keV magnitude is incident in SiC substrate surface layer, injection rate 1E14
~1E20 ions/cm2, injection direction from top to bottom tilts 7 °.
7. a kind of stripping means of SiC base GaN epitaxy piece according to claim 1, it is characterised in that:, will in step S1
The SiC substrate of injection oxonium ion is placed under nitrogen atmosphere, and anneal 5-15min at 850 DEG C -950 DEG C, to repair ion implanting damage
Wound, oxonium ion can form oxygen-enriched state under surface of SiC to form oxygen layer.
8. a kind of stripping means of SiC base GaN epitaxy piece according to claim 1, it is characterised in that: in step S1, gas
Alveolar layer is with a thickness of 40-200nm.
9. a kind of stripping means of SiC base GaN epitaxy piece according to claim 1, it is characterised in that: obtain step S3
SiC base GaN epitaxy piece and removing after SiC substrate it is flat by chemical-mechanical planarization removal.
10. a kind of stripping means of SiC base GaN epitaxy piece according to claim 1, it is characterised in that: bubble layer COX
Bubble and SiO2Bubble.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111048407A (en) * | 2019-12-28 | 2020-04-21 | 松山湖材料实验室 | Method for stripping SiC homogeneous epitaxial layer |
| CN112635323A (en) * | 2020-12-15 | 2021-04-09 | 中国科学院上海微系统与信息技术研究所 | Preparation method of SiC-based heterogeneous integrated gallium nitride film and HEMT device |
| CN113690183A (en) * | 2021-07-06 | 2021-11-23 | 华为数字能源技术有限公司 | Wafer thinning method |
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