CN110079782A - A kind of production facility and the method that coated substrate is manufactured in the production facility - Google Patents
A kind of production facility and the method that coated substrate is manufactured in the production facility Download PDFInfo
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- CN110079782A CN110079782A CN201910069603.XA CN201910069603A CN110079782A CN 110079782 A CN110079782 A CN 110079782A CN 201910069603 A CN201910069603 A CN 201910069603A CN 110079782 A CN110079782 A CN 110079782A
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- 239000000758 substrate Substances 0.000 title claims abstract description 91
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 79
- 238000000034 method Methods 0.000 title claims description 21
- 238000004140 cleaning Methods 0.000 claims abstract description 106
- 238000000576 coating method Methods 0.000 claims abstract description 93
- 239000011248 coating agent Substances 0.000 claims abstract description 88
- 230000003750 conditioning effect Effects 0.000 claims abstract description 42
- 239000012528 membrane Substances 0.000 claims abstract description 41
- 230000003628 erosive effect Effects 0.000 claims abstract description 25
- 239000000969 carrier Substances 0.000 claims abstract description 24
- 238000012546 transfer Methods 0.000 claims abstract description 19
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- 238000010438 heat treatment Methods 0.000 claims description 16
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- 239000010935 stainless steel Substances 0.000 claims description 3
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
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- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/3288—Maintenance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32899—Multiple chambers, e.g. cluster tools
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- Mechanical Engineering (AREA)
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- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
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- Public Health (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
本发明涉及一种生产设施,该生产设施包括至少一个内联式涂布机器,其中基板由基板承载件承载,该承载件涂布有膜,并且包括用于从承载件去除膜的调节设备。本发明的目的是提出一种具有内联式涂布机器的生产设施,以实现高制造速度。该目的通过包括用于将承载件传送到膜侵蚀清洁模块的承载件传送系统的生产设施以及相应的制造方法来解决。
The invention relates to a production facility comprising at least one inline coating machine in which substrates are carried by a substrate carrier coated with a film and comprising conditioning equipment for removing the film from the carrier. The purpose of the present invention is to propose a production facility with an inline coating machine to achieve high manufacturing speeds. This object is solved by a production facility comprising a carrier transfer system for transferring carriers to a membrane erosion cleaning module, and by a corresponding manufacturing method.
Description
该发明涉及一种生产设施,包括至少一个PVD(物理气相沉积)内联式(inline)涂布机器和/或至少一个CVD(化学气相沉积)内联式涂布机器,其中在内联式涂布机器中基板由基板承载件承载,在从承载件去除膜的调节设备与经涂布基板的制造方法的涂布步骤期间,承载件和承载件上的基板一起被涂布有膜。该发明还涉及一种使用这种生产设施制造涂布有膜的基板的方法,其中该方法包括在至少一个PVD涂布室和/或至少一个CVD涂布室中将膜涂布在承载件和承载件中的基板上的涂布步骤。The invention relates to a production facility comprising at least one PVD (Physical Vapor Deposition) inline coating machine and/or at least one CVD (Chemical Vapor Deposition) inline coating machine, wherein the inline coating The substrate in the cloth machine is carried by a substrate carrier, the carrier and the substrate on the carrier are coated with the film during the conditioning device for removing the film from the carrier and the coating step of the method of manufacturing the coated substrate. The invention also relates to a method of manufacturing a substrate coated with a film using such a production facility, wherein the method comprises coating the film on a carrier and in at least one PVD coating chamber and/or at least one CVD coating chamber. Coating step on a substrate in a carrier.
具有内联式涂布机器的生产设施用于经涂布基板的工业生产,例如太阳能电池的生产中。平稳且具有成本效益的生产流程是一个现有的需求。没有颗粒相关的缺陷的高质量膜是进一步的需求。Production facilities with inline coating machines are used in the industrial production of coated substrates, for example in the production of solar cells. A smooth and cost-effective production process is an existing need. A high quality film free of particle related defects is a further requirement.
基板承载件可以接纳多个基板以便通过一次涂布多个基板实现高生产速度。通常承载件也与基板一起被涂布。承载件被重复使用。根据多次涂布,在承载件上形成大的膜厚度。这种高厚度可能会干扰制造方法。The substrate carrier can receive multiple substrates in order to achieve high production speeds by coating multiple substrates at once. Usually the carrier is also coated together with the substrate. The carrier is reused. Depending on the multiple coatings, a large film thickness is formed on the carrier. This high thickness may interfere with fabrication methods.
因此,承载件必须定期清洁。现有技术中已知多种清洁方法,例如,化学方法和机械方法。清洁可以在外部清洁服务提供商处或在制造商的清洁部门进行。为了清洁机器零件,使用了适合于待清洁的特定对象的各种方法。DE 10 2010 060 664 A1描述了一种具有真空抽吸喷射单元的机械清洁和调节单元,其中使用载有颗粒的空气流来侵蚀膜。在该单元中的清洁期间,必须在承载件上使用牺牲基板,以避免承载件的不允许的侵蚀,特别是在承载件的未受保护的边缘处。Therefore, the carrier must be cleaned regularly. Various cleaning methods are known in the art, for example, chemical methods and mechanical methods. Cleaning can be done at an external cleaning service provider or at the manufacturer's cleaning department. For cleaning machine parts, various methods are used which are adapted to the particular object to be cleaned. DE 10 2010 060 664 A1 describes a mechanical cleaning and conditioning unit with a vacuum suction ejection unit, in which a particle-laden air flow is used to erode the membrane. During cleaning in this unit, a sacrificial substrate must be used on the carrier in order to avoid impermissible erosion of the carrier, especially at the unprotected edges of the carrier.
承载件上的膜可能会剥落,产生不良颗粒或二维膜熔蚀(也称为碎片或碎屑)。用于去除松散或弱粘性颗粒的设备在现有技术中是已知的。那些设备可以清洁基板承载件,同时它们通过其传送。WO2013/017971A1描述了一种基板和/或基板承载件清洁模块,其具有电离空气幕和颗粒抽吸件。DE 43 10 258 A1描述了一种用于在前灯反射器上等离子体沉积聚合物涂层的生产设施。该生产设施包括用于基板承载件的返回系统,其包括清洁模块,其中碎屑通过旋转刷去除。这些工具不会去除膜。The film on the carrier may flake off, producing undesirable particles or 2D film ablation (also known as chipping or debris). Equipment for removing loose or weakly cohesive particles is known in the prior art. Those devices can clean substrate carriers while they are conveyed therethrough. WO 2013/017971 A1 describes a substrate and/or substrate carrier cleaning module with an ionized air curtain and a particle suction. DE 43 10 258 A1 describes a production facility for the plasma deposition of polymer coatings on headlight reflectors. The production facility includes a return system for substrate carriers that includes a cleaning module where debris is removed by rotating brushes. These tools will not remove the membrane.
颗粒不仅是与基板承载件上的厚膜有关的问题。膜部分地是多孔的,使得当膜与沉积室外的大气湿度接触时,膜吸收水。多孔膜中的水必须在随后的蒸发期间被抽空。这消耗时间并降低制造方法的速度。在这些情况下,承载件上的低膜厚度是期望的。在生产设施外的高频清洁需要每个生产设施有多个承载件以及复杂的承载件逻辑。Particles are not only a problem with thick films on substrate carriers. The membrane is partially porous such that when the membrane is in contact with atmospheric humidity outside the deposition chamber, the membrane absorbs water. The water in the porous membrane must be evacuated during subsequent evaporation. This consumes time and slows down the manufacturing process. In these cases, a low film thickness on the carrier is desired. High frequency cleaning outside of production facilities requires multiple carriers per facility and complex carrier logic.
US2015/0368793A1描述了一种处理设置,其中处理室包含沉积区域和用于从基板承载件去除涂布材料的区域。清洁区域包括辐射加热器,用于加热基板承载件的至少一个表面并用于从基板承载件蒸发涂布材料。热蒸发可能仅在高于500℃的高温下和真空室的低压下适用于选定的涂布材料,如低熔点金属。真空沉积室中的清洁区域需要额外的空间。因此,沉积室必须具有大的体积,并且室的排空时间变长。具有许多内部零件的大型室制造昂贵。这些室的维修也是复杂和昂贵的。此外,许多涂布材料,例如许多金属氧化物,不能在500℃与1000℃之间的温度范围内蒸发。US 2015/0368793 A1 describes a processing setup in which a processing chamber contains a deposition area and an area for removing coating material from a substrate carrier. The cleaning zone includes a radiant heater for heating at least one surface of the substrate carrier and for evaporating coating material from the substrate carrier. Thermal evaporation may only be suitable for selected coating materials, such as low melting point metals, at high temperatures above 500°C and at low pressures in vacuum chambers. Cleaning areas in vacuum deposition chambers require additional space. Therefore, the deposition chamber must have a large volume, and the emptying time of the chamber becomes long. Large chambers with many internal parts are expensive to manufacture. Maintenance of these chambers is also complex and expensive. Furthermore, many coating materials, such as many metal oxides, cannot be evaporated in the temperature range between 500°C and 1000°C.
本发明的目的是提出一种具有内联式涂布机器的生产设施,用于高制造速度以及在生产设施中制造经涂布基板的简单方法。The object of the present invention is to propose a production facility with an inline coating machine for high production speeds and a simple method of producing coated substrates in the production facility.
该目的通过一种生产设施解决,该生产设施包括承载件传送系统,该承载件传送系统用于将承载件传送到包含膜侵蚀清洁模块的承载件调节设备、以及将该承载件从该调节设备送回以在进一步的涂布步骤中使用,其中,传送系统被配置成将承载件清洁步骤合并于制造过程中。This object is solved by a production facility comprising a carrier transfer system for transferring carriers to and from a carrier conditioning device comprising a membrane erosion cleaning module Sent back for use in a further coating step, wherein the conveyor system is configured to incorporate a carrier cleaning step into the manufacturing process.
通过使用承载件传送系统,根据本发明的生产设施将承载件清洁步骤合并于制造方法中,该承载件传送系统将经涂布基板承载件传送到具有至少一个膜侵蚀清洁模块的调节设备,其中基板承载件将被清洁。在调节设备中清洁,相应地调节的基板承载件随后被馈送回来以在制造过程中的沉积步骤中进一步使用。The production facility according to the invention incorporates a carrier cleaning step into the manufacturing process by using a carrier transfer system that transfers the coated substrate carrier to a conditioning apparatus having at least one membrane erosion cleaning module, wherein The substrate carrier will be cleaned. Cleaned in the conditioning facility, the correspondingly conditioned substrate carrier is then fed back for further use in a deposition step in the manufacturing process.
传送系统可以是部分自动的或完全自动的系统。在根据本发明的生产设施的基板承载件上比在现有技术的常规生产设施中的基板承载件上堆积更少的材料。通过避免厚膜堆叠,几乎避免了膜的颗粒和颗粒碎裂。由于较少的多孔膜材料,在基板承载件的表面处积聚较少的水。基板的快速产出时间、短的工作时间以及最终每单位时间制造许多经涂布基板的快速方法是产生的益处。The transfer system can be a partially automated or fully automated system. Less material builds up on the substrate carriers of the production facility according to the invention than in conventional production facilities of the prior art. By avoiding thick film stacking, film graining and grain fragmentation are all but avoided. Due to the less porous membrane material, less water accumulates at the surface of the substrate carrier. Fast turnaround times for substrates, short work times and ultimately fast methods of producing many coated substrates per unit of time are the resulting benefits.
由于承载件在生产设施中直接清洁,因此不必将其从生产设施取出且不用由经清洁的承载件来更换。因此,现有技术中所需的复杂的承载件逻辑是不适用的。Since the carrier is cleaned directly in the production facility, it does not have to be removed from the production facility and is not replaced by a cleaned carrier. Therefore, the complex carrier logic required in the prior art is not applicable.
根据本发明的生产设施的承载件调节设备包括膜侵蚀清洁模块。在膜侵蚀清洁模块中,至少部分地去除基板承载件上的涂层。承载件上的涂层可以在一次运行或多次运行中沉积。去除取决于多个影响变量,例如来自承载件的材料、膜材料和所使用的清洁方法。在一些情况下,可以在一个方法步骤中去除整个膜厚度,例如,通过引发整个膜从其基部的熔蚀。在其他情况下,膜被逐渐去除,例如,通过膜的机械侵蚀或通过逐渐蚀刻膜厚度。可能只去除所有膜层中的一些,使得在清洁后涂层保留在承载件上。The carrier conditioning device of the production facility according to the invention comprises a membrane erosion cleaning module. In the membrane erosion cleaning module, the coating on the substrate carrier is at least partially removed. The coating on the carrier can be deposited in one run or in multiple runs. The removal depends on several influencing variables, such as the material from the carrier, the membrane material and the cleaning method used. In some cases, the entire film thickness can be removed in one method step, for example, by inducing ablation of the entire film from its base. In other cases, the film is gradually removed, for example, by mechanical erosion of the film or by gradually etching the film thickness. It is possible to remove only some of all film layers so that the coating remains on the carrier after cleaning.
在一些实施方式中,基板承载件可以通过清洁而完全调节以用于随后的沉积方法。在其他实施方式中,除了在承载件调节设备中进行清洁之外,还进行了其他的调节步骤。总的来说,承载件的调节可以在多个子步骤中进行。调节子步骤也可以设置在清洁步骤之前。设备模块可以分配给方法子步骤。承载件调节设备在通过调节设备的路径上可以包括设置在清洁模块后面的后处理模块。在一个示例性实施方式中,后处理模块是清除模块,该清除模块设置在蚀刻模块之后并且去除蚀刻残留物。此外,承载件调节设备可以在通过承载件调节设备的路径的末端处包括预处理模块。承载件可以在预处理模块中进行预处理,使得随后的沉积步骤和/或随后的承载件清洁步骤由于承载件的预处理而以改进的方式进行。在不同的示例性实施方式中,预处理是表面起皱、抛光、润湿、用膜材料、粘附底涂层或不粘底涂层的涂布。In some embodiments, the substrate carrier can be fully conditioned by cleaning for subsequent deposition methods. In other embodiments, other conditioning steps are performed in addition to cleaning in the carrier conditioning apparatus. Overall, the adjustment of the carrier can be carried out in several sub-steps. Conditioning substeps can also be placed before cleaning steps. Equipment modules can be assigned to method substeps. The carrier conditioning device may comprise an aftertreatment module arranged after the cleaning module on its way through the conditioning device. In an exemplary embodiment, the post-processing module is a cleaning module which is arranged after the etching module and removes etching residues. Furthermore, the carrier conditioning device may comprise a pretreatment module at the end of the path through the carrier conditioning device. The carrier can be pretreated in a pretreatment module such that subsequent deposition steps and/or subsequent carrier cleaning steps are performed in an improved manner due to the pretreatment of the carrier. In various exemplary embodiments, the pretreatment is surface corrugation, polishing, wetting, coating with a film material, an adhesive primer, or a non-stick primer.
在一实施方式中,根据本发明的生产设施包括带有承载件传送机构的至少一个涂布机器,该承载件传送机构包括工作路径和承载件返回系统,该工作路径用于将基板承载件和基板传送穿过PVD涂布机器的至少一个PVD涂布室和/或穿过CVD涂布机器的至少一个CVD涂布室,该承载件返回系统将基板从涂布室之后的位置返回到涂布室之前的位置,其中承载件的返回路径特别地紧接着工作路径延伸,其中承载件返回系统包括承载件调节设备,并且返回路径延伸穿过调节设备和膜侵蚀清洁模块;因此,承载件返回系统用作承载件传送系统。In one embodiment, the production facility according to the invention comprises at least one coating machine with a carrier transport mechanism comprising a working path for transporting substrate carriers and The substrate is conveyed through at least one PVD coating chamber of the PVD coating machine and/or through at least one CVD coating chamber of the CVD coating machine, the carrier return system returning the substrate from a position after the coating chamber to the coating chamber. A position before the chamber, where the return path of the carrier extends in particular next to the working path, where the carrier return system includes the carrier conditioning device, and the return path extends through the conditioning device and the membrane erosion cleaning module; thus, the carrier return system Used as a carrier conveying system.
涂布机器的基板装载区域可以定位在至少一个涂布室之前,并且涂布机器的基板卸载区域可以定位在至少一个涂布室之后。因此,该装载区域、一个涂布室或多于一个涂布室和卸载室可以如在内联式涂布机器中那样通常设置在直线上。在另一实施方式中,涂布机器的一侧上的一个处理系统交替地用作装载区域和卸载区域。承载件返回系统在沿着工作路径通过涂布机器的一次运行之后将基板承载件返回到工作路径的开始处,以便进行通过涂布机器的另一次运行。A substrate loading area of the coating machine may be positioned before the at least one coating chamber, and a substrate unloading area of the coating machine may be positioned after the at least one coating chamber. Thus, the loading area, one coating chamber or more than one coating chamber and the unloading chamber can generally be arranged in a straight line as in an inline coating machine. In another embodiment, one handling system on one side of the coating machine is used alternately as a loading area and an unloading area. The carrier return system returns the substrate carrier to the beginning of the working path after one pass along the working path through the coating machine for another pass through the coating machine.
在实际讨论的实施方式中,调节设备是涂布机器的部件。其中的承载件返回系统不仅具有在基板的涂布运行之后将承载件返回到起始点以进行其他基板的涂布运行的功能。另外,承载件返回系统具有将承载件传送到调节设备并从其返回的承载件传送系统的功能。In the actually discussed embodiment, the conditioning device is a component of the coating machine. The carrier return system therein not only has the function of returning the carrier to the starting point after the coating operation of the substrate to perform the coating operation of other substrates. In addition, the carrier return system has the function of a carrier transfer system that transfers the carriers to and returns from the conditioning device.
承载件返回系统中的承载件的返回路径可以设置在其中定位有沉积室的层之下的层中,其中进行基板的涂布。The return path of the carrier in the carrier return system may be provided in a layer below the layer in which the deposition chamber is positioned, in which the coating of the substrate takes place.
根据生产设施中的局部情况,返回路径可以定位在同一层中的沉积室旁边或沉积室之上的层中。在一些实施方式中,返回路径可以部分地沿着工作路径延伸,其中在那些实施方式中,工作路径至少部分地是双向路径。在一些实施方式中,一个装载站被用作基板承载件装载区域并被用作基板承载件卸载区域。Depending on the local situation in the production facility, the return path can be located next to the deposition chamber in the same layer or in a layer above the deposition chamber. In some embodiments, the return path may extend partially along the working path, wherein in those embodiments the working path is at least partially a bi-directional path. In some embodiments, one loading station is used as a substrate carrier loading area and as a substrate carrier unloading area.
根据该发明的生产设施可以包括至少两个涂布机器,涂布机器中的每个涂布机器具有带有承载件返回系统的传送机构,其中涂布机器的承载件传送机构耦接到承载件传送系统,该承载件传送系统将承载件传送到调节设备,该调节设备被配置为对来自涂布机器的承载件进行清洁的公共清洁装置。A production facility according to the invention may comprise at least two coating machines, each of the coating machines having a transport mechanism with a carrier return system, wherein the carrier transport mechanism of the coating machine is coupled to the carrier A conveyor system that conveys the carriers to a conditioning device configured as a common cleaning device for cleaning the carriers coming from the coating machine.
在这样的实施方式中,调节设备通常用于调节来自至少两个涂布机器的基板承载件。承载件借助于承载件传送系统有效地清洁,该承载件传送系统将承载件从涂布机器传送到调节设备并耦接到涂布机器或涂布机器的承载件返回系统。因此,承载件可有效且快速地用于进一步使用。承载件可以在一次运行后或多次运行之后被送到调节设备。当需要承载件调节时,标准可以是运行计数、积聚的膜厚度、起始分层或其他参数。In such embodiments, the conditioning apparatus is typically used to condition substrate carriers from at least two coating machines. The carriers are effectively cleaned by means of a carrier transfer system that transfers the carriers from the coating machine to the conditioning device and is coupled to the coating machine or a carrier return system of the coating machine. Thus, the carrier is efficiently and quickly available for further use. The carrier can be sent to the conditioning device after one run or after several runs. When carrier adjustment is required, the criteria can be run count, accumulated film thickness, onset of delamination, or other parameters.
膜侵蚀清洁模块可以包括机械侵蚀清洁工具,即刷或颗粒喷射源或高压水喷射源。可以有利地使用机械清洁方法,例如,如果待去除的膜在基板承载件上或在基板承载件上的不粘涂层上具有较差的粘附力,或者如果膜是比基板承载件侵蚀地明显更快的弱的或脆的膜。Membrane erosion cleaning modules may include mechanical erosion cleaning means, ie brushes or particle jet sources or high pressure water jet sources. Mechanical cleaning methods can advantageously be used, for example, if the film to be removed has poor adhesion on the substrate carrier or on a non-stick coating on the substrate carrier, or if the film is more aggressive than the substrate carrier. Significantly faster weak or brittle membranes.
在该发明的实施方式中,膜侵蚀清洁模块包括至少一个化学清洁设置,即用于蚀刻流体的喷头或用于蚀刻剂蒸气的分配头。通过这种清洁设置,可以根据需要分配液体或气体蚀刻物质,使得基板承载件被主要正面(全面)地处理和清洁。例如,通过使用线性狭缝喷嘴或通过点式喷嘴设置可以实现沿着线或沿着区域的蚀刻剂的均匀分配。In an embodiment of the invention, the membrane erosion cleaning module comprises at least one chemical cleaning arrangement, ie a spray head for etching fluid or a dispensing head for etchant vapor. With this cleaning arrangement, liquid or gaseous etching substances can be dispensed as required, so that the substrate carrier is treated and cleaned mainly frontally (full). Even distribution of etchant along a line or along an area can be achieved, for example, by using a linear slit nozzle or by a point nozzle arrangement.
承载件调节设备可以在其清洁模块或其他模块中包括用于电磁辐射的等离子体源或天线。可以提供由等离子体源生成的等离子体,用于在蚀刻剂蒸气中形成活性自由基。也可以提供等离子体用于形成溅镀承载件的膜的离子。用直流电压或交流电压操作不同的等离子体源。等离子体可用于沉积膜,例如也可以沉积不粘膜。在没有生成等离子体的情况下,可以经由调节设备中的天线来耦合交流电压。可以通过微波辐射提供水装载吸湿膜的加热,其中通过蒸发该膜中的水来引发膜的分层。The carrier conditioning device may include in its cleaning module or other modules a plasma source or an antenna for electromagnetic radiation. A plasma generated by a plasma source may be provided for forming reactive radicals in the etchant vapor. A plasma may also be provided to form ions for sputtering the film of the carrier. Different plasma sources are operated with DC voltage or AC voltage. Plasma can be used to deposit films, for example non-stick films can also be deposited. In case no plasma is generated, an AC voltage can be coupled via the antenna in the conditioning device. Heating of the water-loaded hygroscopic film can be provided by microwave radiation, wherein delamination of the film is induced by evaporating the water in the film.
膜侵蚀清洁模块可以包括填充有蚀刻剂的流体容器。因此,清洁模块可以形成为一种湿式工作台,其中承载件随后浸入一个液体罐或多个液体罐中。清洁是由承载件与罐中的液体例如蚀刻剂接触引起的。膜侵蚀清洁模块也可以包括流体容器和超声波源。超声波源可以增加罐中流体与基板承载件之间的相互作用,或者它可以刺激基板承载件或其上的膜发生振动。The membrane erosion cleaning module may include a fluid container filled with an etchant. Thus, the cleaning module can be formed as a kind of wet bench, in which the carrier is then immersed in a liquid tank or tanks. Cleaning is caused by contact of the carrier with liquid in the tank, such as etchant. The membrane erosion cleaning module may also include a fluid container and an ultrasonic source. The ultrasonic source can increase the interaction between the fluid in the tank and the substrate carrier, or it can stimulate vibration of the substrate carrier or a membrane thereon.
根据本发明的实施方式,膜侵蚀清洁模块包括热清洁设置,即加热单元和/或冷却单元。加热器元件可以是例如电阻加热器、灯场、感应线圈,与传导承载件或气体燃烧器共同作用。加热器的功能可以是清洁流体的加热、承载件的加热或待清洁的基板承载件的表面的加热。加热的效果可以是清洁剂的活性增加。加热也可用于分解或蒸发或熔化待清洁的膜或辅助膜(例如牺牲下层)。加热部分地引起承载件与其上的膜之间的界面退化。According to an embodiment of the invention, the membrane erosion cleaning module comprises a thermal cleaning arrangement, ie a heating unit and/or a cooling unit. The heater element may be, for example, a resistive heater, a lamp field, an induction coil, co-acting with a conductive carrier or a gas burner. The function of the heater may be heating of the cleaning fluid, heating of the carrier or heating of the surface of the substrate carrier to be cleaned. The effect of heating may be an increase in the activity of the detergent. Heating can also be used to decompose or vaporize or melt the membrane to be cleaned or an auxiliary membrane (eg sacrificially the underlying layer). The heating partially causes the interface between the carrier and the film thereon to degrade.
热清洁设置可以包括至少一个激光器。通过激光器发出的光可以在膜中或膜之下被至少部分地吸收,并且通过在此局部加热而至少引起膜的熔蚀和部分蒸发。激光器可以具有调整到特定清洁任务的波长和功率。激光束可以被集中或被线性地或二维地扩展。A thermal cleaning arrangement may include at least one laser. The light emitted by the laser can be at least partially absorbed in or beneath the film and at least cause ablation and partial evaporation of the film by local heating there. Lasers can have wavelengths and powers tuned to specific cleaning tasks. The laser beam can be focused or expanded linearly or two-dimensionally.
承载件调节设备可以包括材料收集单元,该材料收集单元收集从清洁模块中的承载件去除的膜材料。用于制造基板上的涂层的材料应该良好利用而不是浪费。在生产设施中连续生产期间,在清洁方法中沉积和去除大量材料。特别是对于有价值的膜材料,例如贵金属,需要回收利用在清洁期间去除的膜残留物。在本发明的生产设施中,回收利用实现简单,因为在清洁模块中总是去除相同的膜。The carrier conditioning device may include a material collection unit that collects film material removed from the carriers in the cleaning module. Materials used to make coatings on substrates should be put to good use and not wasted. During continuous production in production facilities, large quantities of material are deposited and removed in cleaning methods. Especially for valuable membrane materials, such as noble metals, there is a need to recycle membrane residues removed during cleaning. In the production plant according to the invention recycling is achieved simply because the same film is always removed in the cleaning module.
本发明的目的还通过使用本发明的生产设施制造涂布有膜的基板的方法来解决,其中该方法还包括在基板调节单元中进行的至少一个调节步骤,其中调节步骤包括至少一个子步骤:即在清洁模块中至少部分地侵蚀来自承载件的膜。在生产设施内部执行的清洁步骤间接地促成含有少量颗粒的高质量膜。与常规方法相比,该方法的生产率得到改善,并且与现有技术相比,降低了运行生产设施的成本。The object of the present invention is also solved by a method of manufacturing a substrate coated with a film using the production facility of the present invention, wherein the method also comprises at least one conditioning step carried out in a substrate conditioning unit, wherein the conditioning step comprises at least one substep: This means that the film from the carrier is at least partially eroded in the cleaning module. Cleaning steps performed inside the production facility indirectly contribute to high-quality films with low particle counts. The productivity of the method is improved compared with conventional methods, and the cost of running production facilities is reduced compared with the prior art.
不同的所讨论的特征和选项可以在技术人员的判断下彼此组合而不脱离本公开的范围。Different discussed features and options may be combined with each other at the discretion of the skilled person without departing from the scope of the present disclosure.
在下文中,将借助于图对本发明进行说明,这些图示出了:In the following, the invention will be explained with the aid of figures, which show:
图1根据本发明的生产设施,其具有包括清洁模块的内联式涂布机器;Figure 1 Production facility according to the invention with an inline coating machine comprising a cleaning module;
图2具有清洁模块和后处理模块的生产设施;Figure 2 Production facility with cleaning module and aftertreatment module;
图3具有清洁模块、后处理模块和预处理模块的生产设施;Figure 3 Production facility with a cleaning module, a post-treatment module and a pre-treatment module;
图4具有两个内联式涂布机器和一个公共清洁工具的生产设施;Figure 4 Production facility with two inline coating machines and a common cleaning tool;
图5具有刷的清洁模块;Figure 5 has a cleaning module with brushes;
图6具有颗粒喷射源的清洁模块;Figure 6 has a cleaning module with a particle injection source;
图7具有用于蚀刻流体的喷头的清洁模块;Figure 7 has a cleaning module with a showerhead for etching fluid;
图8具有用于蚀刻剂蒸气的分配头的清洁模块;Fig. 8 cleaning module with dispensing head for etchant vapor;
图9具有在流体容器中的蚀刻流体的清洁模块;Figure 9 has a cleaning module with etching fluid in a fluid container;
图10具有激光器的清洁模块;Figure 10 has a cleaning module with a laser;
图11具有等离子源的清洁模块;Figure 11 has a cleaning module with a plasma source;
图12具有加热单元和冷却单元的清洁模块;Figure 12 has a cleaning module with a heating unit and a cooling unit;
图13具有超声波源的清洁模块以及Figure 13 Cleaning module with ultrasonic source and
图14具有水喷射源的清洁模块。Figure 14 Cleaning module with water jet source.
图1将具有内联式涂布机器2的生产设施1示意性地示出为本发明的实施方式。在生产设施的预期使用期间,基板被装载在基板承载件5上的基板承载件装载区域26中(在图4-图13中示出)。在一些实施方式中,基板承载件5可以接纳多个基板,例如,太阳能晶片。基板承载件5也可以设计成用于一个大基板,例如玻璃板,其面积为平方米的数量级,而不是用于多个小基板。从装载区域26,基板承载件5沿着内联式涂布机器2中的工作路径3延伸,膜的主要连续制造方法可以在基板上运行。生产设施1具有承载件传送系统4,其包括涂布机器的承载件传送机构,用于传送基板承载件5。实际沉积在沉积室6中进行,该沉积室是PVD室。在不同的实施方式中,其是CVD室。那些粗略分类的室包括其他的室,例如用于原子层沉积(ALD)的室。内联式涂布机器中的各个室可通过已知设施彼此分离,例如,通过室阀或差动泵级。涂布室6中的涂布方法可以是真空方法,其假定由真空泵产生欠压。在其他实施方式中,在沉积室6中实施大气或常压涂布方法。涂布机器2可以包括更多室,例如附加的转移室和多于一个沉积室6。在所示的实施方式中,经沉积的基板从承载件卸载区域27中的基板承载件5卸载。Figure 1 schematically shows a production facility 1 with an inline coating machine 2 as an embodiment of the invention. During intended use of the production facility, substrates are loaded on the substrate carrier 5 in the substrate carrier loading area 26 (shown in FIGS. 4-13 ). In some embodiments, the substrate carrier 5 can receive multiple substrates, eg, solar wafers. The substrate carrier 5 can also be designed for one large substrate, for example a glass plate, whose area is in the order of square meters, instead of several small substrates. From the loading area 26, the substrate carrier 5 extends along the working path 3 in the inline coating machine 2, on which the main continuous manufacturing process of the film can be run. The production facility 1 has a carrier transport system 4 comprising a carrier transport mechanism of a coating machine for transporting substrate carriers 5 . The actual deposition takes place in the deposition chamber 6, which is a PVD chamber. In various embodiments, it is a CVD chamber. Those broadly classified chambers include other chambers, such as those used for atomic layer deposition (ALD). The individual chambers in an inline coating machine can be separated from each other by known means, eg by chamber valves or differential pump stages. The coating method in the coating chamber 6 may be a vacuum method, which assumes an underpressure generated by a vacuum pump. In other embodiments, an atmospheric or atmospheric coating method is performed in the deposition chamber 6 . The coating machine 2 may comprise further chambers, such as additional transfer chambers and more than one deposition chamber 6 . In the illustrated embodiment, the deposited substrates are unloaded from the substrate carrier 5 in the carrier unloading area 27 .
此后,空的基板承载件5由承载件返回系统7送回基板承载件装载区域26,使得承载件5可用于在那里下一次运行的相应的下一次使用。在根据本发明的生产设施1中,承载件不仅是整体返回的。此外,基板承载件5由承载件调节设备9调节,相应地还原,返回路径8延伸通过该承载件调节设备。因此,承载件5也在物理上恢复到比上次沉积之后更好的状态。该调节包括膜去除清洁,使得基板承载件5上的膜厚度在承载件返回系统7的出口处比在其入口处更低。在极值情况下,通过膜侵蚀清洁模块10将膜从基板承载件5完全去除。Thereafter, the empty substrate carrier 5 is returned by the carrier return system 7 to the substrate carrier loading area 26 so that the carrier 5 is available for a corresponding next use in the next run there. In the production facility 1 according to the invention, the carriers are not only returned in their entirety. Furthermore, the substrate carrier 5 is adjusted, correspondingly restored, by a carrier adjustment device 9 through which the return path 8 extends. Consequently, the carrier 5 is also physically restored to a better state than it was after the last deposition. This adjustment includes film removal cleaning so that the film thickness on the substrate carrier 5 is lower at the exit of the carrier return system 7 than at its entry. In extreme cases, the film is completely removed from the substrate carrier 5 by the film erosion cleaning module 10 .
在不同的图中,相同的附图标记标记相同或相似的对象。在适当考虑现有差异之后,对一个图的评论也相应地适用于其他图。In the different figures, the same reference numbers designate the same or similar objects. Comments made on one figure apply to the other figure accordingly, after due account is taken of existing differences.
图2示意性地示出了根据本发明的生产设施1',其中涂布机器2包括在调节设备9中的清洁模块10旁边的后处理模块11。在后处理模块11中,可以在承载件5上进行与在清洁模块10中不同的工作。例如,其中消除了从清洁模块10留下的残留物。FIG. 2 schematically shows a production plant 1 ′ according to the invention, wherein the coating machine 2 comprises a post-processing module 11 next to the cleaning module 10 in the conditioning device 9 . In the aftertreatment module 11 different work can be carried out on the carrier 5 than in the cleaning module 10 . For example, residues left from the cleaning module 10 are eliminated therein.
与图2相比,图3的实施方式中的承载件调节设备9附加地包括预处理模块12。在预处理模块12中,承载件5得到预处理,该预处理在随后的沉积或在随后的清洁中产生益处。示例性预处理可以是粘性底涂层、不粘底涂层或牺牲层的涂布。Compared to FIG. 2 , the carrier adjustment device 9 in the embodiment of FIG. 3 additionally includes a preprocessing module 12 . In the pretreatment module 12 , the carrier 5 is pretreated, which produces benefits in the subsequent deposition or in the subsequent cleaning. Exemplary pretreatments may be the application of an adhesive primer, a non-stick primer, or a sacrificial layer.
图4示出了具有两个沉积机器2和用于调节的公共调节工具的生产设施,该调节包括清洁来自两个涂布机器2的承载件5。在本发明的实施方式中,调节设备9是服务于两个涂布机器2的独立工具。承载件传送系统4耦接到涂布机器2的承载件返回系统7。承载件传送系统4在图4中所示的实施方式中是完全自动的。在未示出的替代实施方式中,承载件传送系统4具有用于待清洁的承载件5的存储位置以及用于操作者的信号输出,该操作者将承载件5手动地传送到调节工具并在清洁之后从那里返回到涂布机器2。FIG. 4 shows a production facility with two deposition machines 2 and a common adjustment tool for adjustment, which includes cleaning the carriers 5 from the two coating machines 2 . In an embodiment of the invention, the adjustment device 9 is an independent tool serving the two coating machines 2 . The carrier transport system 4 is coupled to a carrier return system 7 of the coating machine 2 . The carrier transport system 4 is fully automatic in the embodiment shown in FIG. 4 . In an alternative embodiment not shown, the carrier transfer system 4 has a storage location for the carriers 5 to be cleaned and a signal output for an operator who manually transfers the carriers 5 to the adjustment tool and From there it is returned to the coating machine 2 after cleaning.
图5至图14的图例示了作为本发明生产设施1、1'、1”、1”'的实施方式的部件的一些不同的清洁模块10、10'、10”、10”'、10””。侧视图中所示的承载件5是开放式工作平板(平钢板),在图中只有其低厚度可见,而其支撑基板的大表面不可见。在所介绍的实施方式中,承载件5包括用于基板即用于太阳能晶片的凹部。在不同的实施方式中,承载件由不同的材料,例如,不锈钢、铝合金或碳纤维复合材料组成。承载件5可以由驱动辊支撑,该驱动辊将承载件5传送通过清洁模块10。在图5所示的清洁模块10中,膜被刷13侵蚀。通过抽吸装置将侵蚀的膜材料从清洁模块10去除。调节刷13的材料、其旋转速度以及刷上的压制力,使得膜被侵蚀,并且基板承载件5不会被侵蚀超过可允许的程度。Figures 5 to 14 are diagrams illustrating some different cleaning modules 10, 10', 10", 10"', 10" as part of an embodiment of a production facility 1, 1', 1", 1"' according to the invention ". The carrier 5 shown in the side view is an open working plate (flat steel plate), only its low thickness is visible in the figure, while the large surface of its supporting base plate is not visible. In the described embodiment, the carrier 5 comprises recesses for the substrates, ie for the solar wafers. In different embodiments, the carrier consists of different materials, eg stainless steel, aluminum alloy or carbon fiber composite material. The carrier 5 may be supported by drive rollers that transport the carrier 5 through the cleaning module 10 . In the cleaning module 10 shown in FIG. 5 , the film is eroded by the brushes 13 . The eroded membrane material is removed from the cleaning module 10 by suction means. The material of the brush 13 , its rotational speed and the pressing force on the brush are adjusted so that the film is eroded and the substrate carrier 5 is not eroded more than admissible.
另一机械地工作的清洁模块10'在图6中示出。其中通过使用颗粒喷射源14进行机械膜磨蚀。它使用例如增压空气和锐缘的颗粒喷在承载件5上以至少部分地去除膜。喷射颗粒和去除的膜部件通过抽吸而被取出。图14示出一实施方式,其中使用水喷射源25代替颗粒喷射源14。Another mechanically working cleaning module 10 ′ is shown in FIG. 6 . The mechanical film abrasion is performed therein by using the particle ejection source 14 . It uses, for example, pressurized air and sharp-edged particles sprayed on the carrier 5 to at least partially remove the film. The ejected particles and removed membrane parts are removed by suction. FIG. 14 shows an embodiment in which a water jet source 25 is used instead of the particle jet source 14 .
在图7所示的清洁模块中,液体物质,相应地蚀刻流体16,例如酸或浸出物,被喷洒在承载件5上,以蚀刻承载件5的膜或以其他方式将其去除。图9示出了清洁模块10””,其中定位了带有蚀刻剂的流体容器19,其中承载件5插入该容器19中。在图13的实施方式中,流体容器与超声波源24耦接。In the cleaning module shown in FIG. 7 , a liquid substance, respectively an etching fluid 16 , such as an acid or a leachate, is sprayed on the carrier 5 in order to etch or otherwise remove the film of the carrier 5 . Figure 9 shows a cleaning module 10''' in which a fluid container 19 with etchant is positioned, wherein the carrier 5 is inserted into this container 19. In the embodiment of FIG. 13 , the fluid container is coupled to an ultrasound source 24 .
当清洁模块10、10'、10”、10”'仅用于去除一个特定膜时,则有价值的材料(例如,来自ITO膜的铟)的回收可以是有利的。When the cleaning module 10, 10', 10", 10"' is only used to remove one specific film, then the recovery of valuable material (eg indium from the ITO film) can be beneficial.
图8中所示的清洁模块10”'应用经蒸发的化学物质进行清洁。蚀刻剂蒸气18根据需要通过分配头17分配在基板承载件5的表面上。在图11的实施方式中,清洁模块包括等离子体源21,其电离蚀刻剂蒸气18并形成化学活性自由基,使得承载件5可以在比没有等离子体时更低的温度下被蚀刻干净。清洁模块10”'在该实施方式中是真空室。The cleaning module 10"' shown in FIG. A plasma source 21 is included which ionizes the etchant vapor 18 and forms chemically active free radicals so that the carrier 5 can be etched clean at a lower temperature than without the plasma. The cleaning module 10"' in this embodiment is vacuum chamber.
在图10的实施方式中,通过用激光器20局部地快速加热膜来清洁承载件5,使得其至少部分地分层。在分层工艺中,可以涉及在低温下蒸发的水或其他物质,其中作为辅助措施,该物质被嵌入膜中或设置在膜下。In the embodiment of Fig. 10, the carrier 5 is cleaned by locally rapid heating of the film with a laser 20, so that it is at least partially delaminated. In the layering process, water or other substances evaporated at low temperature may be involved, wherein as an auxiliary measure the substance is embedded in the membrane or arranged under the membrane.
在示例性实施方式中,基板承载件5由不锈钢构成。该制造方法基本上是在基板两侧的100nm厚的氧化铟锡(ITO)膜的溅镀工艺。基板承载件用于50次沉积运行。由此在承载件上形成厚度约为5μm的ITO膜。然后在独立的激光清洁工具中清洁承载件5。在其中使用具有100W电功率的CO2激光器,其发出的红外光束被ITO膜很好地吸收,使得膜被分层。通过激光器的扫描,承载件的整个表面被随后清洁,然后承载件的另一侧被清洁。收集去除的膜材料以回收利用ITO膜中的铟。另一实施方式使用具有1kW功率和约1000nm波长的光纤激光器。用72cm2/s的面积清洁速度清洁基板承载件5的表面,因此承载件5的一侧在36秒内被清洁。可以针对膜材料和生产设施要求调整激光器20的类型和功率。In an exemplary embodiment, the substrate carrier 5 consists of stainless steel. The fabrication method is basically a sputtering process of a 100nm thick indium tin oxide (ITO) film on both sides of the substrate. The substrate carrier was used for 50 deposition runs. An ITO film with a thickness of about 5 μm was thus formed on the carrier. The carrier 5 is then cleaned in a separate laser cleaning tool. A CO2 laser with 100W electric power is used in it, and the infrared beam emitted by it is well absorbed by the ITO film, so that the film is delaminated. By scanning the laser, the entire surface of the carrier is subsequently cleaned, and then the other side of the carrier is cleaned. The removed film material is collected to recycle indium in the ITO film. Another embodiment uses a fiber laser with a power of 1 kW and a wavelength of about 1000 nm. The surface of the substrate carrier 5 was cleaned with an areal cleaning speed of 72 cm 2 /s, so that one side of the carrier 5 was cleaned within 36 seconds. The type and power of the laser 20 can be adjusted for the film material and production facility requirements.
在图12的实施方式中,通过热冲击进行清洁。在所示的实施方式中,通过快速的温度变化生成冲击,该快速的温度变化由加热单元22和冷却单元23引发。在具体实施方式中,加热单元是卤素灯场。在一种实施方式中,冷却单元22是液氮的喷洒装置。In the embodiment of Figure 12, cleaning is performed by thermal shock. In the embodiment shown, the shock is generated by a rapid temperature change, which is induced by the heating unit 22 and the cooling unit 23 . In a specific embodiment, the heating unit is a halogen lamp field. In one embodiment, the cooling unit 22 is a spraying device of liquid nitrogen.
该发明所公开的部件可以在技术人员的判断下彼此组合,即使此处之前未明确描述组合。同时连续描述的特征不得被误解为强制性特征组合。Components disclosed in this invention may be combined with each other at the discretion of the skilled person even if the combination is not explicitly described here before. Features described in succession at the same time must not be misinterpreted as mandatory feature combinations.
附图标记reference sign
1、1'、1”、1”' 生产设施1, 1', 1", 1"' Production Facility
2 涂布机器2 coating machines
3 工作路径3 work path
4 承载件传送系统4 Carrier conveying system
5 基板承载件5 Substrate carrier
6 涂布室6 coating room
7 承载件返回系统7 Carrier return system
8 返回路径8 return path
9 承载件调节设备9 Carrier adjustment device
10、10'、10”、10”'、10”” 膜侵蚀清洁模块10, 10', 10", 10"', 10"" membrane erosion cleaning modules
11 后处理模块11 Post-processing module
12 预处理模块12 preprocessing module
13 刷13 brushes
14 颗粒喷射源14 Particle injection source
15 喷头15 nozzles
16 蚀刻流体16 Etching fluid
17 分配头17 distribution head
18 蚀刻剂蒸气18 Etchant vapor
19 流体容器19 Fluid container
20 激光器20 lasers
21 包括等离子体源21 including plasma source
22 加热单元22 heating unit
23 冷却单元23 cooling unit
24 超声波源24 ultrasonic source
25 水喷射源25 water jet source
26 基板承载件装载区域26 Substrate carrier loading area
27 基板承载件卸载区域。27 Substrate carrier unloading area.
Claims (15)
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EP18153544 | 2018-01-25 | ||
EP18153544.4 | 2018-01-25 |
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DE (1) | DE202019100333U1 (en) |
Cited By (2)
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CN111118475A (en) * | 2020-01-15 | 2020-05-08 | 中国科学院半导体研究所 | High-temperature device and method for growth and post-treatment of silicon carbide material |
CN114059015A (en) * | 2021-11-01 | 2022-02-18 | 浙江爱旭太阳能科技有限公司 | A baking system and baking method for a carrier board |
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DE102020204125A1 (en) * | 2020-03-30 | 2021-09-30 | Volkswagen Aktiengesellschaft | A method for cleaning a workpiece carrier and a production line having a device for carrying out the method |
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DE4310258A1 (en) | 1993-03-30 | 1994-10-06 | Bosch Gmbh Robert | Device for producing a plasma polymer protective layer on workpieces, in particular headlight reflectors |
DE102010060664A1 (en) | 2010-11-18 | 2012-05-24 | Roth & Rau Ag | Method for cleaning and conditioning of substrate carrier of substrate coating apparatus, involves supplying airflow to surface area of carrier until preset thickness of coating on carrier is reached, and sucking airflow of surface area |
DE102011052325A1 (en) | 2011-08-01 | 2013-02-07 | Roth & Rau Ag | Cleaning module and cleaning method for substrates and / or substrate carrier |
DE102014114575A1 (en) | 2014-06-23 | 2015-12-24 | Von Ardenne Gmbh | Transport device, processing arrangement and coating method |
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2019
- 2019-01-22 DE DE202019100333.2U patent/DE202019100333U1/en active Active
- 2019-01-24 CN CN201910069603.XA patent/CN110079782A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN111118475A (en) * | 2020-01-15 | 2020-05-08 | 中国科学院半导体研究所 | High-temperature device and method for growth and post-treatment of silicon carbide material |
CN114059015A (en) * | 2021-11-01 | 2022-02-18 | 浙江爱旭太阳能科技有限公司 | A baking system and baking method for a carrier board |
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