CN110071630A - A kind of conversion circuit and implementation method of seamless switching decompression and straight-through operating mode - Google Patents
A kind of conversion circuit and implementation method of seamless switching decompression and straight-through operating mode Download PDFInfo
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- CN110071630A CN110071630A CN201910461214.1A CN201910461214A CN110071630A CN 110071630 A CN110071630 A CN 110071630A CN 201910461214 A CN201910461214 A CN 201910461214A CN 110071630 A CN110071630 A CN 110071630A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/14—Arrangements for reducing ripples from DC input or output
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
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Abstract
The invention discloses a kind of conversion circuits of seamless switching decompression and straight-through operating mode, including the reduction voltage circuit with voltage input end VIN and voltage output end VOUT, the high voltage bootstrap circuit that high level makes reduction voltage circuit support straight-through operating mode is provided for reduction voltage circuit, when for eliminating voltage input end VIN lower than voltage output end VOUT, the BOOT automatic boosting circuit for the ripple voltage that voltage output end VOUT occurs.The present invention detects the relationship of VIN and VOUT by comparator automatically, and when VIN is close to VOUT, the high level control charge pump automatic boosting circuit work of comparator output achievees the purpose that stable BOOT voltage, to stabilize the output voltage VOUT, eliminates ripple voltage；When VIN is lower than VOUT and lower VIN voltage, by the way of cascade two and more than two charge pump automatic boosting circuits, improve the VGS voltage difference on metal-oxide-semiconductor NM2, to reduce the conducting resistance Rdson of metal-oxide-semiconductor NM2, under the conditions of same output current IO UT, making the voltage difference of VIN and VOUT reduces, and achievees the purpose that VOUT close to VIN.
Description
Technical field
The present invention relates to IC design fields, specifically, being to be related to a kind of seamless switching decompression and straight-through work
The conversion circuit and implementation method of mode.
Background technique
Conventional decompression converter can only operate in input voltage place more higher than output voltage；When input voltage is lower than
Or when close to output voltage, converter cisco unity malfunction.In reduction voltage circuit as shown in Figure 1, when VIN is lower than VOUT
When, if it is desired to if supporting straight-through operating mode VOUT can also stablizing output simultaneously, need at this time HD signal be maintained for a long time
High level.HD is generated by boostrap circuit as shown in Figure 2, but since the associated driver circuitry of BOOT has current power dissipation, so
The BOOT circuit to be got up by boostrap circuit boosting, if it cannot persistently allow boostrap circuit to work, the voltage of BOOT will fall
Get off, the voltage of HD is caused slowly to decline, finally when HD is lower than VOUT+Vth_NM2 (threshold voltage of NM2), NM2 is just
It is not then turned on.
In order to solve the problems, such as that NM2 cannot be opened due to the voltage decline of HD.Would generally HD open a period of time after,
Such as 50us, HD can be forced to drag down, while LD signal is drawn high about 200ns, realize that the low level time of 200ns occurs in SW,
The boostrap circuit of Fig. 2 in this way is started to work, and is given Cboot capacitor charging, is maintained the voltage of BOOT.When next cycle H D is got higher
It waits, is equal to BOOT voltage.HD in this way can be continued working in such a situa-tion.
But which has the following disadvantages: that HD signal needs periodically switch primary, when HD shutdown,
VOUT will appear ripple voltage, as shown in figure 3, especially when the load current of VOUT is larger, the ripple voltage of VOUT
It is higher；When load current is larger, the voltage difference that may cause VIN and VOUT is larger, especially when VIN voltage is relatively low
When such as less than 5V, boostrap circuit causes the voltage of BOOT lower, it will cause the conducting resistance Rdson of NM2 in Fig. 1 compared with
Greatly, the voltage difference so as to cause VIN and VOUT is larger.
Summary of the invention
The purpose of the present invention is to provide a kind of conversion circuits of seamless switching decompression and straight-through operating mode, solve existing
In scheme, the problem of causing BOOT voltage that can fall, it is necessary to periodically BOOT is given to supplement energy, it may line so as to cause VOUT
Wave problem bigger than normal；And the voltage difference that will lead to VIN and VOUT when load current is larger, VIN is relatively low is larger.
To achieve the above object, The technical solution adopted by the invention is as follows:
A kind of conversion circuit of seamless switching decompression and straight-through operating mode, as shown in figure 4, including that there is voltage input end
The reduction voltage circuit of VIN and voltage output end VOUT, providing high level for reduction voltage circuit makes reduction voltage circuit support straight-through operating mode
High voltage bootstrap circuit, voltage output end VOUT when further including for eliminating voltage input end VIN lower than voltage output end VOUT
The BOOT automatic boosting circuit of the ripple voltage of appearance.
As shown in figure 5, the BOOT automatic boosting circuit includes comparator OP1, it is connected to comparator OP1 output end EN_
Charge pump automatic boosting circuit on CP, after series connection one end connect with voltage input end VIN, the other end and voltage output end VOUT
Divider resistance R2, R3, R4 and R5 of connection, the other end of the resistance R2 are connect with voltage input end VIN, the resistance R5's
The other end is connect with voltage output end VOUT, the tie point ground connection of the resistance R3 and resistance R4, the reverse phase of the comparator OP1
Input terminal is connected on the tie point of resistance R2 and R3, and the normal phase input end of the comparator OP1 is connected to resistance R4 and R5
On tie point.
As shown in fig. 6, the charge pump automatic boosting circuit includes voltage-stablizer LDO, grid is loaded with control clock CP_
The metal-oxide-semiconductor P1 and metal-oxide-semiconductor P2 of CLK, one end are connected to the capacitor C1 in metal-oxide-semiconductor P1 drain electrode, and cathode is connected to the another of capacitor C1
The Schottky diode D1 at end, anode are connected to the Schottky diode D2 of Schottky diode D1 cathode, are connected to Schottky
The cathode of the capacitor C2 of diode D2 cathode, Schottky diode D2 are BOOT voltage output end, and the source electrode of the metal-oxide-semiconductor P1 connects
It connects on the output end VCC of voltage-stablizer LDO, the anode of Schottky diode D1 is connected on voltage input end VIN, the MOS
The drain electrode of pipe P1, P2 connects, which is CP point, the other end of the capacitor C2 and the source grounding of metal-oxide-semiconductor P2, described
Control clock CP_CLK is provided by charge pump, and the input terminal of the charge pump is connect with comparator OP1 output end EN_CP.
As shown in fig. 7, the charge pump automatic boosting circuit is multiple cascades, and when cascade, the voltage input end of next stage
VIN is connected on the BOOT voltage output end of upper level, and the CP point of next stage and the CP point of upper level connect.
As shown in Figure 1, the reduction voltage circuit includes metal-oxide-semiconductor NM2, drain electrode is connected to the metal-oxide-semiconductor NM1 of metal-oxide-semiconductor NM2 source electrode,
It is connected to the inductance L1 of metal-oxide-semiconductor NM2 source electrode, which is SW, and one end ground connection, the other end are connected to the electricity of the inductance L1 other end
Hold Cout, the grid of the metal-oxide-semiconductor NM2 connects HD signal, and the external LD signal of the grid of the metal-oxide-semiconductor NM1, the inductance L1's is another
One end is voltage output end VOUT, and the drain electrode of the metal-oxide-semiconductor NM2 is voltage input end VIN, and the source electrode of the metal-oxide-semiconductor NM1 connects
Ground.
As shown in Fig. 2, the high voltage bootstrap circuit includes driver, Schottky diode D5, the power supply of the driver
End BOOT is connected to the cathode of Schottky diode D5, and the anode of the Schottky diode D5 is connected to the defeated of voltage-stablizer LDO
On outlet VCC, the control terminal of the driver is connected on the cathode of Schottky diode D5 by charging capacitor Cboot, is driven
The control terminal of dynamic device is connected between metal-oxide-semiconductor NM1 drain electrode and metal-oxide-semiconductor NM2 source electrode, the output end HD and metal-oxide-semiconductor of the driver
The grid of NM2 connects.
Based on the conversion circuit of described above a kind of seamless switching decompression and straight-through operating mode, the present invention also provides
The implementation method of the circuit, includes the following steps:
(1) input voltage VIN obtains output voltage VO UT in reduction voltage circuit after decompression is handled, and by VIN and
VOUT is transmitted to BOOT automatic boosting circuit after partial pressure；
(2) in BOOT automatic boosting circuit, the relationship of VIN and VOUT is detected using comparator OP1, comparator OP1's
Anti-phase input termination VIN, normal phase input end meet VOUT；
(3) working condition that charge pump automatic boosting circuit is controlled according to comparator OP1 output level EN_CP, by charge
The output signal BOOT of pump automatic boosting circuit feeds back to high voltage bootstrap circuit, and high voltage bootstrap circuit exports HD signal to being depressured electricity
Road, for controlling the state of output voltage VO UT.
Specifically, in step (3):
(1) as VIN and VOUT close:
When VIN is close to VOUT, the output end EN_CP of comparator OP1 becomes high level, control charge pump automatic boosting electricity
Road starting, makes the voltage of BOOT be fixed as VIN+VCC, to stablize the voltage of BOOT, eliminates the ripple of VOUT.
(2) when VIN is lower than VOUT:
(a) as VIN > 5V:
(a1) if input voltage VIN > 5V, VCC 5V, the output voltage BOOT of charge pump automatic boosting circuit are as follows:
BOOT=VIN+VCC=VIN+5V；
(a2) under direct mode operation, when HD is high level, the voltage of HD is equal to BOOT, and VIN is close to VOUT, metal-oxide-semiconductor NM2
On VGS calculation formula it is as follows:
VGS=HD-VOUT=VIN+5V-VOUT；
(a3) the final expression formula of the VGS of metal-oxide-semiconductor NM2 is as follows:
VGS=5V；
(b) as VIN≤5V:
(b1) if input voltage VIN≤5V, VCC VIN, the output voltage BOOT of charge pump automatic boosting circuit are as follows:
BOOT=VIN+VCC=VIN+VIN=2*VIN；
(b2) under direct mode operation, when HD is high level, the voltage of HD is equal to BOOT, and VIN is close to VOUT, metal-oxide-semiconductor NM2
On VGS calculation formula it is as follows:
VGS=HD-VOUT=2*VIN-VOUT；
(b3) the final expression formula of the VGS of metal-oxide-semiconductor NM2 is as follows:
VGS=VIN；
(b4) multiple charge pump automatic boosting circuits are cascaded, the VGS on metal-oxide-semiconductor NM2 becomes more times of VIN, makes metal-oxide-semiconductor NM2
Conducting resistance Rdson reduce, under the conditions of same output current IO UT, according to the following formula calculate output voltage VO UT:
VOUT=VIN-Rdson*IOUT
The value of Rdson*IOUT is smaller, VIN and VOUT voltage difference is with regard to smaller, to realize that the voltage of VOUT is electric close to VIN
The purpose of pressure.
Compared with prior art, the invention has the following advantages:
The charge pump automatic boosting circuit that the present invention is arranged is used to stablize BOOT when comparator detects VIN and VOUT close
Voltage solves the problems, such as that BOOT voltage can fall in existing circuit, realizes VOUT and stablizes output, to reach elimination
The purpose of VOUT ripple voltage；When VIN is lower than VOUT and lower VIN voltage, if user needs using biggish defeated at this time
Electric current IOUT out, then the output voltage VO UT under straight-through operating mode is relatively low, at this point, using cascade two and more than two electricity
Lotus pumps the mode of automatic boosting circuit, improves the VGS voltage difference on metal-oxide-semiconductor NM2, becomes 2*VIN or more times from original VIN
VIN under the conditions of same output current IO UT, reduces VIN's and VOUT to reduce the conducting resistance Rdson of metal-oxide-semiconductor NM2
Voltage difference avoids, and problem that when output current IO UT larger cause VOUT relatively low lower in VIN, and reaching keeps VOUT close
The purpose of VIN.
Detailed description of the invention
Fig. 1 is the circuit diagram of the reduction voltage circuit of existing scheme.
Fig. 2 is the circuit diagram of the high voltage bootstrap circuit of existing scheme.
Fig. 3 is the variation diagram of existing scheme output voltage VO UT.
Fig. 4 is schematic block circuit diagram of the invention.
Fig. 5 is the circuit diagram of BOOT automatic boosting circuit of the invention.
Fig. 6 is the circuit diagram of single charge pump automatic boosting circuit of the invention.
Fig. 7 is the circuit diagram of two-stage charge pump automatic boosting circuit of the invention.
Fig. 8 is the variation diagram of output voltage VO UT of the present invention.
Specific embodiment
The invention will be further described with embodiment for explanation with reference to the accompanying drawing, and mode of the invention includes but not only limits
In following embodiment.
Embodiment
As shown in figure 4, the conversion circuit of a kind of seamless switching decompression and straight-through operating mode disclosed by the invention, including tool
There are the reduction voltage circuit of voltage input end VIN and voltage output end VOUT, providing high level for reduction voltage circuit supports reduction voltage circuit
The high voltage bootstrap circuit of straight-through operating mode, electricity when further including for eliminating voltage input end VIN lower than voltage output end VOUT
The BOOT automatic boosting circuit for the ripple voltage for pressing output end VOUT to occur.
As shown in figure 5, the BOOT automatic boosting circuit of the invention includes comparator OP1, it is defeated to be connected to comparator OP1
Charge pump automatic boosting circuit on outlet EN_CP, after series connection one end connect with voltage input end VIN, the other end and voltage it is defeated
Divider resistance R2, R3, R4 and R5 of outlet VOUT connection, the other end of the resistance R2 is connect with voltage input end VIN, described
The other end of resistance R5 is connect with voltage output end VOUT, the tie point ground connection of the resistance R3 and resistance R4, the comparator
The inverting input terminal of OP1 is connected on the tie point of resistance R2 and R3, and the normal phase input end of the comparator OP1 is connected to resistance
On the tie point of R4 and R5.
As shown in fig. 6, charge pump automatic boosting circuit of the invention is existing circuit, which includes voltage-stablizer LDO,
Grid is loaded with the metal-oxide-semiconductor P1 and metal-oxide-semiconductor P2 of control clock CP_CLK, and one end is connected to the capacitor C1 in metal-oxide-semiconductor P1 drain electrode,
Cathode is connected to the Schottky diode D1 of the other end of capacitor C1, and anode is connected to the Schottky of Schottky diode D1 cathode
Diode D2, is connected to the capacitor C2 of Schottky diode D2 cathode, and the cathode of Schottky diode D2 is BOOT voltage output
End, the source electrode of the metal-oxide-semiconductor P1 are connected on the output end VCC of voltage-stablizer LDO, and the anode of Schottky diode D1 is connected to electricity
It presses on input terminal VIN, the drain electrode of described metal-oxide-semiconductor P1, P2 connect, which is CP point, the other end and MOS of the capacitor C2
The source grounding of pipe P2, the control clock CP_CLK are provided by charge pump, the input terminal and comparator OP1 of the charge pump
Output end EN_CP connection；Voltage stabilization of this circuit for controlling BOOT point when EN_CP is high level is VIN+VCC, thoroughly
Solve the problems, such as that BOOT voltage can fall in existing circuit.
As shown in fig. 7, for reduce input voltage VIN and output voltage VO UT pressure difference, the present invention by the charge pump oneself
Dynamic booster circuit is set as multiple, cascades between circuit, and specifically when connection, the voltage input end VIN of next stage is connected to one
On the BOOT voltage output end of grade, the CP point of next stage and the CP point of upper level are connected.
Specifically, reduction voltage circuit as shown in Figure 1 includes metal-oxide-semiconductor NM2, drain electrode is connected to the metal-oxide-semiconductor of metal-oxide-semiconductor NM2 source electrode
NM1 is connected to the inductance L1 of metal-oxide-semiconductor NM2 source electrode, which is SW, and one end ground connection, the other end are connected to the inductance L1 other end
Capacitor Cout, the grid of the metal-oxide-semiconductor NM2 meets HD signal, the external LD signal of the grid of the metal-oxide-semiconductor NM1, the inductance L1
The other end be voltage output end VOUT, the drain electrode of the metal-oxide-semiconductor NM2 is voltage input end VIN, the source electrode of the metal-oxide-semiconductor NM1
Ground connection.
High voltage bootstrap circuit as shown in Figure 2 includes driver, Schottky diode D5, the power end of the driver
BOOT is connected to the cathode of Schottky diode D5, and the anode of the Schottky diode D5 is connected to the output of voltage-stablizer LDO
It holds on VCC, the control terminal of the driver is connected on the cathode of Schottky diode D5 by charging capacitor Cboot, driving
The control terminal of device is connected between metal-oxide-semiconductor NM1 drain electrode and metal-oxide-semiconductor NM2 source electrode, the output end HD and metal-oxide-semiconductor NM2 of the driver
Grid connection.
The conduction voltage drop of Schottky diode is had ignored in the present embodiment.
Based on the conversion circuit of described above a kind of seamless switching decompression and straight-through operating mode, the present invention also provides
The implementation method of the circuit, includes the following steps:
(1) input voltage VIN obtains output voltage VO UT in reduction voltage circuit after decompression is handled, and by VIN and
VOUT is transmitted to BOOT automatic boosting circuit after partial pressure；
(2) in BOOT automatic boosting circuit, the relationship of VIN and VOUT is detected using comparator OP1, comparator OP1's
Anti-phase input termination VIN, normal phase input end meet VOUT；
(3) working condition that charge pump automatic boosting circuit is controlled according to comparator OP1 output level EN_CP, by charge
The output signal BOOT of pump automatic boosting circuit feeds back to high voltage bootstrap circuit, and high voltage bootstrap circuit exports HD signal to being depressured electricity
Road, for controlling the state of output voltage VO UT.
Specifically, in step (3):
(1) as VIN and VOUT close:
When VIN is close to VOUT, the output end EN_CP of comparator OP1 becomes high level, control charge pump automatic boosting electricity
Road starting, makes the voltage of BOOT be fixed as VIN+VCC, to stablize the voltage of BOOT, eliminates the ripple of VOUT.
(2) when VIN is lower than VOUT:
(a) as VIN > 5V:
(a1) if input voltage VIN > 5V, VCC 5V, the output voltage BOOT of charge pump automatic boosting circuit are as follows:
BOOT=VIN+VCC=VIN+5V；
(a2) under direct mode operation, when HD is high level, the voltage of HD is equal to BOOT, and VIN is close to VOUT, metal-oxide-semiconductor NM2
On VGS calculation formula it is as follows:
VGS=HD-VOUT=VIN+5V-VOUT；
(a3) the final expression formula of the VGS of metal-oxide-semiconductor NM2 is as follows:
VGS=5V；
(b) as VIN≤5V:
(b1) if input voltage VIN≤5V, VCC VIN, the output voltage BOOT of charge pump automatic boosting circuit are as follows:
BOOT=VIN+VCC=VIN+VIN=2*VIN；
(b2) under direct mode operation, when HD is high level, the voltage of HD is equal to BOOT, and VIN is close to VOUT, metal-oxide-semiconductor NM2
On VGS calculation formula it is as follows:
VGS=HD-VOUT=2*VIN-VOUT；
(b3) the final expression formula of the VGS of metal-oxide-semiconductor NM2 is as follows:
VGS=VIN；
(b4) multiple charge pump automatic boosting circuits are cascaded, the VGS on metal-oxide-semiconductor NM2 becomes more times of VIN, makes metal-oxide-semiconductor NM2
Conducting resistance Rdson reduce, under the conditions of same output current IO UT, according to the following formula calculate output voltage VO UT:
VOUT=VIN-Rdson*IOUT
The value of Rdson*IOUT is smaller, VIN and VOUT voltage difference is with regard to smaller, to realize that the voltage of VOUT is electric close to VIN
The variation diagram of the purpose of pressure, VOUT is as shown in Figure 8.
In an existing electrical circuit, when VIN is lower than VOUT, if desired the straight-through operating mode of support while VOUT stablize defeated
Out, the high voltage bootstrap circuit for persistently providing high level for HD is needed to continue working, otherwise, BOOT voltage will lower, and cause
HD slowly declines, until metal-oxide-semiconductor NM2 is disconnected, to solve this problem, the present invention is added to charge pump automatic boosting circuit, is used for
It is VIN+VCC in the voltage stabilization of the control BOOT point when VIN is lower than VOUT, solving BOOT voltage in existing circuit can fall
The problem of falling realizes VOUT and stablizes output, to achieve the purpose that eliminate VOUT ripple voltage.
When VIN is lower than VOUT, if VIN voltage is lower than 3V, the conducting resistance Rdson of metal-oxide-semiconductor NM2 is larger, if making at this time
User needs the pressure drop IOUT*Rdson then generated on metal-oxide-semiconductor NM2 using biggish output current IO UT larger, therefore,
Output voltage VO UT under straight-through operating mode is relatively low, cannot reach the requirement of user.
Therefore, the present invention improves metal-oxide-semiconductor by the way of cascade two and more than two charge pump automatic boosting circuits
VGS voltage difference on NM2, when cascading two, the voltage of first order charge pump automatic boosting circuit BOOT1 is VIN+VCC=VIN
The voltage of+VIN=2*VIN, second level charge pump automatic boosting circuit BOOT are 2*VIN+VCC=2*VIN+VIN=3*VIN,
The VGS of metal-oxide-semiconductor NM2 becomes 2*VIN from original VIN at this time；When cascading multiple, the VGS of metal-oxide-semiconductor NM2 is become by original VIN
For more times of VIN, so that the conducting resistance Rdson of metal-oxide-semiconductor NM2 be made to become smaller, under the conditions of same output current IO UT, VIN and
The voltage difference of VOUT will be smaller, avoids, and problem that when output current IO UT larger cause VOUT relatively low lower in VIN,
Achieve the purpose that VOUT close to VIN.
Above-described embodiment is only one of the preferred embodiment of the present invention, should not be taken to limit protection model of the invention
It encloses, as long as that in body design thought of the invention and mentally makes has no the change of essential meaning or polishing, is solved
The technical issues of it is still consistent with the present invention, should all be included within protection scope of the present invention.
Claims (10)
1. a kind of conversion circuit of seamless switching decompression and straight-through operating mode, including it is defeated with voltage input end VIN and voltage
The reduction voltage circuit of outlet VOUT provides the high pressure bootstrapping electricity that high level makes reduction voltage circuit support straight-through operating mode for reduction voltage circuit
Road, which is characterized in that voltage output end VOUT goes out when further including for eliminating voltage input end VIN lower than voltage output end VOUT
The BOOT automatic boosting circuit of existing ripple voltage.
2. the conversion circuit of a kind of seamless switching decompression and straight-through operating mode according to claim 1, which is characterized in that
The BOOT automatic boosting circuit includes comparator OP1, and the charge pump being connected on comparator OP1 output end EN_CP rises automatically
Volt circuit, after series connection one end connect with voltage input end VIN, the divider resistance R2 of the other end and voltage output end VOUT connection,
The other end of R3, R4 and R5, the resistance R2 are connect with voltage input end VIN, the other end and voltage output of the resistance R5
VOUT connection, the tie point ground connection of the resistance R3 and resistance R4 are held, the inverting input terminal of the comparator OP1 is connected to resistance
On the tie point of R2 and R3, the normal phase input end of the comparator OP1 is connected on the tie point of resistance R4 and R5.
3. the conversion circuit of a kind of seamless switching decompression and straight-through operating mode according to claim 2, which is characterized in that
The charge pump automatic boosting circuit includes voltage-stablizer LDO, and grid is loaded with the metal-oxide-semiconductor P1 and MOS of control clock CP_CLK
Pipe P2, one end are connected to the capacitor C1 in metal-oxide-semiconductor P1 drain electrode, and cathode is connected to the Schottky diode of the other end of capacitor C1
D1, anode are connected to the Schottky diode D2 of Schottky diode D1 cathode, are connected to the electricity of Schottky diode D2 cathode
Hold C2, the cathode of Schottky diode D2 is BOOT voltage output end, and the source electrode of the metal-oxide-semiconductor P1 is connected to voltage-stablizer LDO's
On output end VCC, the anode of Schottky diode D1 is connected on voltage input end VIN, and the drain electrode of described metal-oxide-semiconductor P1, P2 connect
It connects, which is CP point, the other end of the capacitor C2 and the source grounding of metal-oxide-semiconductor P2, the control clock CP_CLK
It is provided by charge pump, the input terminal of the charge pump is connect with comparator OP1 output end EN_CP.
4. the conversion circuit of a kind of seamless switching decompression and straight-through operating mode according to claim 3, which is characterized in that
The charge pump automatic boosting circuit is multiple cascades, and when cascade, the voltage input end VIN of next stage is connected to upper level
On BOOT voltage output end, the CP point of next stage and the CP point of upper level are connected.
5. the conversion circuit of a kind of seamless switching decompression and straight-through operating mode according to claim 4, which is characterized in that
The reduction voltage circuit includes metal-oxide-semiconductor NM2, and drain electrode is connected to the metal-oxide-semiconductor NM1 of metal-oxide-semiconductor NM2 source electrode, is connected to metal-oxide-semiconductor NM2 source electrode
Inductance L1, which is SW, and one end ground connection, the other end are connected to the capacitor Cout of the inductance L1 other end, the metal-oxide-semiconductor
The grid of NM2 connects HD signal, the external LD signal of the grid of the metal-oxide-semiconductor NM1, and the other end of the inductance L1 is voltage output end
The drain electrode of VOUT, the metal-oxide-semiconductor NM2 are voltage input end VIN, and the source electrode of the metal-oxide-semiconductor NM1 is grounded.
6. the conversion circuit of a kind of seamless switching decompression and straight-through operating mode according to claim 5, which is characterized in that
The high voltage bootstrap circuit includes driver, and the power end BOOT of Schottky diode D5, the driver are connected to Schottky
The anode of the cathode of diode D5, the Schottky diode D5 is connected on the output end VCC of voltage-stablizer LDO, the driving
The control terminal of device is connected on the cathode of Schottky diode D5 by charging capacitor Cboot, and the control terminal of driver is connected to
Between metal-oxide-semiconductor NM1 drain electrode and metal-oxide-semiconductor NM2 source electrode, the output end HD of the driver is connect with the grid of metal-oxide-semiconductor NM2.
7. the reality of the conversion circuit of a kind of seamless switching decompression as described in any one of claims 1 to 6 and straight-through operating mode
Existing method, which comprises the steps of:
(1) input voltage VIN obtains output voltage VO UT in reduction voltage circuit after decompression is handled, and VIN and VOUT is passed through
BOOT automatic boosting circuit is transmitted to after crossing partial pressure；
(2) in BOOT automatic boosting circuit, the relationship of comparator OP1 detection VIN and VOUT, the reverse phase of comparator OP1 are utilized
Input termination VIN, normal phase input end meet VOUT；
(3) working condition of charge pump automatic boosting circuit is controlled according to comparator OP1 output level EN_CP, certainly by charge pump
The output signal BOOT of dynamic booster circuit feeds back to high voltage bootstrap circuit, and high voltage bootstrap circuit exports HD signal to reduction voltage circuit,
For controlling the state of output voltage VO UT.
8. the implementation method of the conversion circuit of a kind of seamless switching decompression according to claim 7 and straight-through operating mode,
It is characterized in that, in step (3),
When VIN is close to VOUT, the output end EN_CP of comparator OP1 becomes high level, and control charge pump automatic boosting circuit opens
It is dynamic, so that the voltage of BOOT is fixed as VIN+VCC, to stablize the voltage of BOOT, eliminates the ripple of VOUT.
9. the implementation method of the conversion circuit of a kind of seamless switching decompression according to claim 7 and straight-through operating mode,
It is characterized in that, in step (3):
(a1) when VIN is lower than VOUT, in reduction voltage circuit, HD need to be high level under direct mode operation；
(a2) if input voltage VIN > 5V, VCC 5V, the output voltage BOOT of charge pump automatic boosting circuit are as follows:
BOOT=VIN+VCC=VIN+5V；
(a3) under direct mode operation, when HD is high level, the voltage of HD is equal to BOOT, and VIN is close to VOUT, on metal-oxide-semiconductor NM2
The calculation formula of VGS is as follows:
VGS=HD-VOUT=VIN+5V-VOUT；
(a4) the final expression formula of the VGS of metal-oxide-semiconductor NM2 is as follows:
VGS=5V.
10. the implementation method of the conversion circuit of a kind of seamless switching decompression according to claim 7 and straight-through operating mode,
It is characterized in that, in step (3),
(b1) when VIN is lower than VOUT, in reduction voltage circuit, HD need to be high level under direct mode operation；
(b2) if input voltage VIN≤5V, VCC VIN, the output voltage BOOT of charge pump automatic boosting circuit are as follows:
BOOT=VIN+VCC=VIN+VIN=2*VIN；
(b3) under direct mode operation, when HD is high level, the voltage of HD is equal to BOOT, and VIN is close to VOUT, on metal-oxide-semiconductor NM2
The calculation formula of VGS is as follows:
VGS=HD-VOUT=2*VIN-VOUT；
(b4) the final expression formula of the VGS of metal-oxide-semiconductor NM2 is as follows:
VGS=VIN；
(b5) multiple charge pump automatic boosting circuits are cascaded, the VGS on metal-oxide-semiconductor NM2 becomes more times of VIN, makes leading for metal-oxide-semiconductor NM2
The resistance Rdson that is powered reduces, and under the conditions of same output current IO UT, calculates output voltage VO UT according to the following formula:
VOUT=VIN-Rdson*IOUT
The value of Rdson*IOUT is smaller, VIN and VOUT voltage difference is with regard to smaller, to realize the voltage of VOUT close to VIN voltage
Purpose.
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| CN110474532A (en) * | 2019-09-11 | 2019-11-19 | 上海南芯半导体科技有限公司 | A kind of band carries the circuit and its implementation of not power down switching charge pump mode of operation |
| CN110784107A (en) * | 2019-11-08 | 2020-02-11 | 厦门亿联网络技术股份有限公司 | A nearly double boost rectifier circuit device based on DC-DC structure |
| CN111049360A (en) * | 2019-12-31 | 2020-04-21 | 广州金升阳科技有限公司 | Voltage reduction circuit and voltage reduction control method |
| CN113169663A (en) * | 2020-08-05 | 2021-07-23 | 深圳市大疆创新科技有限公司 | Drive circuit of channel switch, charging control method and charger |
| CN116317547A (en) * | 2023-03-06 | 2023-06-23 | 无锡力芯微电子股份有限公司 | Step-down circuit with through mode |
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| CN116317547A (en) * | 2023-03-06 | 2023-06-23 | 无锡力芯微电子股份有限公司 | Step-down circuit with through mode |
| CN116317547B (en) * | 2023-03-06 | 2023-11-03 | 无锡力芯微电子股份有限公司 | Step-down circuit with through mode |
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