[go: up one dir, main page]

CN110066516A - A kind of preparation method of the composite package matrix for LED encapsulation - Google Patents

A kind of preparation method of the composite package matrix for LED encapsulation Download PDF

Info

Publication number
CN110066516A
CN110066516A CN201910349709.5A CN201910349709A CN110066516A CN 110066516 A CN110066516 A CN 110066516A CN 201910349709 A CN201910349709 A CN 201910349709A CN 110066516 A CN110066516 A CN 110066516A
Authority
CN
China
Prior art keywords
water bath
graphene oxide
temperature
solution
water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910349709.5A
Other languages
Chinese (zh)
Inventor
饶海波
彭俊
吴志琪
郭子悦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Electronic Science and Technology of China
Original Assignee
University of Electronic Science and Technology of China
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Electronic Science and Technology of China filed Critical University of Electronic Science and Technology of China
Priority to CN201910349709.5A priority Critical patent/CN110066516A/en
Publication of CN110066516A publication Critical patent/CN110066516A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/15Nano-sized carbon materials
    • C01B32/182Graphene
    • C01B32/184Preparation
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/02Elements
    • C08K3/04Carbon
    • C08K3/042Graphene or derivatives, e.g. graphene oxides
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K9/00Use of pretreated ingredients
    • C08K9/02Ingredients treated with inorganic substances
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K9/00Use of pretreated ingredients
    • C08K9/04Ingredients treated with organic substances
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2203/00Applications
    • C08L2203/20Applications use in electrical or conductive gadgets
    • C08L2203/206Applications use in electrical or conductive gadgets use in coating or encapsulating of electronic parts

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

The invention discloses a kind of preparation methods of graphene quantum dot composite package matrix for LED encapsulation, belong to photoelectric field, comprising the following steps: prepare graphene oxide solution using strong acid and oxidizer treatment crystalline graphite powder;The graphene oxide solution of acquisition purify simultaneously ultrasound, is finally dried;The drying graphene oxide of acquisition is prepared into nano-graphene quantum dot (GQDs) solution by chemical cleavage;Graphene quantum dot solution is purified;Graphene quantum dot is evenly spread in colloid, stable GQDs composite package host material is obtained.The light extraction efficiency of encapsulating material can be effectively promoted with composite package matrix prepared by the present invention and improves the thermal stability of chip and light-emitting phosphor, realizes higher device efficiency, guarantee LED component in high-power lower luminous flux output steady in a long-term.

Description

一种用于LED封装的复合封装基质的制备方法A kind of preparation method of composite encapsulation matrix for LED encapsulation

技术领域technical field

本发明涉及到光电技术领域,具体涉及到一种LED封装的复合封装基质的制备方法。The invention relates to the field of optoelectronic technology, in particular to a preparation method of a composite packaging matrix for LED packaging.

背景技术Background technique

LED是light emitting diode的简称。自1993年,在蓝色GaN-LED上取得重大技术突破,并于1996年成功的实现了白光LED。近年来,LED凭借着其低功耗、无污染、寿命长、低压驱动等优点成为了继白炽灯、荧光灯之后的第三代照明光源。LED is short for light emitting diode. Since 1993, major technological breakthroughs have been made in blue GaN-LEDs, and white LEDs have been successfully realized in 1996. In recent years, LED has become the third-generation lighting source after incandescent lamps and fluorescent lamps by virtue of its advantages of low power consumption, no pollution, long life, and low-voltage driving.

到目前为止,白光LED大致有三种方式,荧光粉转化白光LED(即pc-LEDs) 是市场上使用最广泛的白光LED,通过在芯片上涂覆单色或者多色的荧光粉来实现白光。目前市场上运用最广泛的是蓝色LED芯片+黄色荧光粉的方案,这一方案不仅成本低、实现工艺相对简单、综合性能适中,还可以通过改变YAG荧光粉的化学组成(光谱成份调节)以及调整荧光粉层的厚度,获得色温在3000K 至10000K区间的各色白光。So far, there are roughly three types of white LEDs. Phosphor-converted white LEDs (ie pc-LEDs) are the most widely used white LEDs on the market. White light is achieved by coating monochromatic or multi-color phosphors on the chip. At present, the most widely used solution on the market is the blue LED chip + yellow phosphor solution. This solution not only has low cost, relatively simple implementation process, and moderate comprehensive performance, but also can be adjusted by changing the chemical composition of the YAG phosphor (spectral composition adjustment). and adjusting the thickness of the phosphor layer to obtain white light of various colors with a color temperature ranging from 3000K to 10000K.

LED芯片产生的辐射光和荧光粉的激发光需要经过芯片、荧光粉胶、封装胶和透镜等光学元件才能辐射到环境中,考虑到材料对光线的吸收,减小光线在封装材料中的传播光程,减少不必要的散射、折射和全反射,提高光的抽取效率,是提高LED光效的关键。现有的白光pc-LEDs封装结构中,芯片大约有 13%的蓝光未能够被抽取到荧光粉层,而荧光粉涂层中又有大约13%的光子由于混色/散射/吸收损失而无法提取出来。The radiant light generated by the LED chip and the excitation light of the phosphor need to pass through optical components such as chips, phosphor glue, encapsulation glue and lenses to be radiated into the environment. Considering the absorption of light by the material, the propagation of light in the packaging material is reduced. Optical path, reducing unnecessary scattering, refraction and total reflection, and improving light extraction efficiency are the keys to improving LED light efficiency. In the existing white light pc-LEDs package structure, about 13% of the blue light of the chip cannot be extracted to the phosphor layer, and about 13% of the photons in the phosphor coating cannot be extracted due to color mixing/scattering/absorption loss. come out.

另外通过实验发现在大功率输入下,荧光粉的温度会远高于芯片结温并造成荧光层碳化现象,这是由于荧光粉的颗粒弥散在导热系数很低(大约 0.2W·m-1·K-1)的树脂和硅胶等聚合物中,其产生的热量很难传递出去而不断积累,导致芯片和荧光粉的量子效率下降。芯片结温以及荧光粉体温度的高低直接影响相关物理过程的发光效率。对于目前光效33%的1W功率型白光 pc-LEDs(相应于>0.66W的热功率)而言,如果其导热系数可以从目前 ks=0.2W/mK提升到ks=1.0W/mK以上时,其工作时芯片结温与环境温度之差可以降低近5倍,即从85度降低到35度左右,相对光通量可以提升10%以上。In addition, it is found through experiments that under high power input, the temperature of the phosphor will be much higher than the junction temperature of the chip and cause the carbonization of the phosphor layer. In polymers such as K -1 ) resin and silica gel, the heat generated by it is difficult to transfer out and accumulates continuously, resulting in a decrease in the quantum efficiency of chips and phosphors. The junction temperature of the chip and the temperature of the phosphor directly affect the luminous efficiency of the relevant physical process. For the current 1W power white light pc-LEDs with a luminous efficiency of 33% (corresponding to a thermal power of > 0.66W), if the thermal conductivity can be improved from the current ks=0.2W/mK to ks=1.0W/mK or more , the difference between the chip junction temperature and the ambient temperature can be reduced by nearly 5 times during operation, that is, from 85 degrees to about 35 degrees, and the relative luminous flux can be increased by more than 10%.

发明内容SUMMARY OF THE INVENTION

石墨烯具有高折射率、高导热系数的优异性能,在可见光波段,石墨烯量子点(GQDs)折射率在3.0左右,4nm的GQDs对400nm以上的光线吸收很少。针对目前封装基质材料,在增加封装基质折射率的方法中,添加高折射率的纳米填料是一个有潜力的方向。Graphene has excellent properties of high refractive index and high thermal conductivity. In the visible light band, the refractive index of graphene quantum dots (GQDs) is around 3.0, and GQDs of 4 nm absorb little light above 400 nm. For the current packaging matrix materials, adding high refractive index nanofillers is a potential direction in the method of increasing the refractive index of the packaging matrix.

本发明所要解决的问题是实现一种高折射率、高导热系数稳定的石墨烯量子点(GQDs)复合封装基质材料。The problem to be solved by the present invention is to realize a composite encapsulation matrix material of graphene quantum dots (GQDs) with high refractive index and high thermal conductivity.

本发明的技术方案为:一种用于LED封装的复合封装基质的制备方法,其特征在于,包括以下步骤:The technical scheme of the present invention is: a preparation method of a composite encapsulation matrix for LED encapsulation, characterized in that it comprises the following steps:

(1)、利用强酸和氧化剂处理鳞片石墨粉制备氧化石墨烯溶液并进行提纯、超声,最后干燥;(1), utilize strong acid and oxidant to process flake graphite powder to prepare graphene oxide solution and purify, ultrasonic, finally dry;

(2)、将干燥好的氧化石墨烯通过化学切割法制备氧化石墨烯量子点 (GOQDs)溶液,并经过还原、提纯后得到石墨烯量子点(GQDs);(2), preparing graphene oxide quantum dots (GOQDs) solution by chemical cutting method from the dried graphene oxide, and obtaining graphene quantum dots (GQDs) after reduction and purification;

(3)、将步骤(2)获得的GQDs,然后均匀分散到胶体中,得到稳定的GQDs 复合封装基质材料;(3), dispersing the GQDs obtained in step (2) into the colloid uniformly to obtain a stable GQDs composite encapsulation matrix material;

(4)、将步骤(3)获得的封装基质材料涂覆在LED的出光方向表面上。(4), coating the encapsulation matrix material obtained in step (3) on the surface of the LED in the light-emitting direction.

在步骤(1)中,制备氧化石墨烯采用的是改进的Hummers法,也可以是Staudenmaier法、Hummers法、超声辅助Hummers法和Brodie法等。In step (1), an improved Hummers method is used for preparing graphene oxide, and it can also be a Staudenmaier method, a Hummers method, an ultrasonic-assisted Hummers method, a Brodie method, or the like.

在步骤(1)中,所述强酸指的是指浓硫酸(H2SO4),或者是浓硫酸、浓硝酸、浓磷酸中的一种或者几种组合,且石墨粉与强酸的比例为1g对应20~40ml强酸溶液。In step (1), the strong acid refers to concentrated sulfuric acid (H 2 SO 4 ), or one or more combinations of concentrated sulfuric acid, concentrated nitric acid, and concentrated phosphoric acid, and the ratio of graphite powder to strong acid is 1g corresponds to 20-40ml of strong acid solution.

在步骤(1)中,所述氧化剂是高锰酸钾,或者是发烟硝酸环境下的氯酸钾,氯酸钾与石墨粉的质量比为300%~500%;或者是硝酸钠和高锰酸钾;其中硝酸钠与石墨粉的质量比为30%~60%,高锰酸钾与石墨粉的质量比为300%~500%。In step (1), the oxidant is potassium permanganate, or potassium chlorate under fuming nitric acid environment, and the mass ratio of potassium chlorate to graphite powder is 300% to 500%; or sodium nitrate and potassium permanganate; The mass ratio of sodium nitrate to graphite powder is 30% to 60%, and the mass ratio of potassium permanganate to graphite powder is 300% to 500%.

在步骤(1)中,采用的改进的Hummers法总共有低温、中温、高温三个阶段,其中低温阶段是将石墨粉加入到浓硫酸中搅拌1小时,然后将高锰酸钾分批次加入到反应液中充分搅拌3小时,整个低温阶段控制反应液温度低于10 度;中温阶段,将反应液加热至35~40度,时间为0.5~2小时,中温阶段是实验的主要氧化过程,通过控制反应的时间和高锰酸钾的用量可以制备不同氧化程度的氧化石墨烯;高温阶段将反应液加热至80度,并缓慢滴加40ml的去离子水并不断搅拌,持续时间为10~20分钟,将反应液温度上升至90度并持续搅拌,持续时间为10~20分钟,停止加热并加入60ml的去离子水终止反应,滴加30%过氧化氢溶液并搅拌直至溶液颜色不再发生变化。In step (1), the improved Hummers method adopted has three stages of low temperature, medium temperature and high temperature in total, wherein the low temperature stage is to add graphite powder in the concentrated sulfuric acid and stir for 1 hour, then potassium permanganate is added in batches Fully stirred in the reaction solution for 3 hours, and the temperature of the reaction solution was controlled to be lower than 10 degrees in the whole low temperature stage; in the middle temperature stage, the reaction solution was heated to 35 to 40 degrees for 0.5 to 2 hours, and the middle temperature stage was the main oxidation process of the experiment. Graphene oxide with different degrees of oxidation can be prepared by controlling the reaction time and the amount of potassium permanganate; in the high temperature stage, the reaction solution is heated to 80 degrees, and 40 ml of deionized water is slowly added dropwise and stirred continuously for a duration of 10~ 20 minutes, raise the temperature of the reaction solution to 90 degrees and continue stirring for 10 to 20 minutes, stop heating and add 60 ml of deionized water to terminate the reaction, add 30% hydrogen peroxide solution dropwise and stir until the color of the solution is no longer change.

在所述的Hunmmers法中,可以通过控制高锰酸钾的用量以及中温阶段的反应时长来制备不同氧化程度的氧化石墨烯,高锰酸钾用量越多,反应时间越长最后制备的氧化石墨烯氧化程度越高。In the described Hummers method, the graphene oxide of different oxidation degrees can be prepared by controlling the consumption of potassium permanganate and the reaction time in the middle temperature stage, the more potassium permanganate consumption is, the longer the reaction time is. The graphite oxide finally prepared The higher the degree of alkylene oxidation.

在步骤(1)中,提纯的步骤包括有离心洗涤、透析,在前三次洗涤需要使用稀盐酸洗涤,稀盐酸由37%浓盐酸按照1:9的比例稀释得到,用去离子水多次离心洗涤后直至溶液PH值接近7,然后用截留分子量为8000~14000的透析袋透析一周,每天换水2次,或者使用抽滤、高速离心等其它形式一种或者几种提纯方式。In step (1), the purification steps include centrifugal washing and dialysis. In the first three washings, dilute hydrochloric acid needs to be used for washing. Dilute hydrochloric acid is obtained by diluting 37% concentrated hydrochloric acid in a ratio of 1:9, and centrifuging with deionized water for many times. After washing, until the pH value of the solution is close to 7, then use a dialysis bag with a molecular weight cut-off of 8,000 to 14,000 to dialyze for a week, change the water twice a day, or use one or several other purification methods such as suction filtration and high-speed centrifugation.

在步骤(1)中,超声过程指的是用超声仪超声30~60分钟。In step (1), the sonication process refers to sonicating for 30-60 minutes with a sonicator.

在步骤(1)中,干燥方式为冷冻烘干,或者是自然阴干、风干、红外加热、干燥箱烘干中的一种。In step (1), the drying method is freeze drying, or one of natural shade drying, air drying, infrared heating, and drying in a drying oven.

在步骤(2)中,所述的化学切割法(chemical cutting)法指的是利用H2SO4/ KMnO4对GO的开链(Unzipping)效果,将已经制备氧化石墨烯切割成更小尺寸的GOQDs。In step (2), the chemical cutting method refers to using the unzipping effect of H 2 SO 4 / KMnO 4 on GO to cut the prepared graphene oxide into smaller sizes GOQDs.

在步骤(2)中,化学切割法存在有四个阶段,其中低温阶段将(1)中已经制备的氧化石墨烯固体加入到浓硫酸中并搅拌,控制反应液温度低于10度,持续时间为1小时;常温阶段是指在室温25度左右,将高锰酸钾加入到反应液中持续搅拌,每1g的氧化石墨烯需要加入0.5~1g的高锰酸钾,持续时间为2小时左右;中温阶段是指将反应液温度上升至45~50度,持续时间为1~2小时;高温阶段是指将反应液温度上升到90度,并缓慢滴加40ml的去离子,持续时间为30分钟;待溶液冷却至室温后滴加30%的过氧化氢溶液直至溶液颜色不再发生变化。In step (2), the chemical cutting method has four stages, wherein the graphene oxide solid prepared in (1) is added to the concentrated sulfuric acid and stirred in the low temperature stage, and the temperature of the control reaction solution is lower than 10 degrees, and the duration The normal temperature stage refers to adding potassium permanganate to the reaction solution at about 25 degrees at room temperature and stirring continuously. Every 1 g of graphene oxide needs to add 0.5 to 1 g of potassium permanganate, and the duration is about 2 hours. The medium temperature stage means that the temperature of the reaction solution is raised to 45-50 degrees, and the duration is 1-2 hours; the high-temperature stage is that the temperature of the reaction solution is raised to 90 degrees, and 40ml of deionization is slowly added dropwise, and the duration is 30 minutes; after the solution was cooled to room temperature, 30% hydrogen peroxide solution was added dropwise until the color of the solution no longer changed.

在步骤(2)中,通过控制化学切割的实验时长和高锰酸钾的量以及步骤(2) 所制备氧化石墨烯的氧化程度可以制备不同纳米尺寸的氧化石墨烯量子点。In step (2), graphene oxide quantum dots with different nanometer sizes can be prepared by controlling the experimental duration of chemical cutting and the amount of potassium permanganate and the degree of oxidation of graphene oxide prepared in step (2).

在步骤(2)中,还原指的是采用化学还原、高温还原、电化学还原、溶剂热还原等方法进行脱氧处理,将GOQDs还原成GQDs。In step (2), reduction refers to the use of chemical reduction, high temperature reduction, electrochemical reduction, solvothermal reduction and other methods for deoxidation treatment to reduce GOQDs to GQDs.

在步骤(2)中,提纯的步骤包括有抽滤和透析,使用0.22um的过滤膜将步骤(2)中的反应液进行抽滤,取过滤的后的溶液置于分子量为3000~8000的透析袋中透析一周,或者采用高速离心等其它形式一种或者几种提纯方式。In step (2), the purification step includes suction filtration and dialysis, the reaction solution in step (2) is subjected to suction filtration using a 0.22um filter membrane, and the filtered solution is placed in a 3000-8000 molecular weight solution. Dialysis in a dialysis bag for one week, or one or several purification methods in other forms such as high-speed centrifugation.

在步骤(3)中,所述胶体为热固胶或者感光胶,其中热固胶为环氧树脂、硅胶、聚甲基丙烯酸甲酯(PMMA)、聚碳酸酯(PC);感光胶体为感光剂和成膜剂,其中感光剂为重铬酸铵(ADC)、铬酸盐、重氮化合物或者是叠氮基化合物中的一种或者多种的组合;成膜剂为聚乙烯醇(PVA)、阿拉伯树胶、聚酰亚胺或聚乙酸乙烯酯乳剂中的一种或者多种的组合。In step (3), the colloid is thermosetting adhesive or photosensitive adhesive, wherein the thermosetting adhesive is epoxy resin, silica gel, polymethyl methacrylate (PMMA), polycarbonate (PC); the photosensitive colloid is photosensitive adhesive Agent and film-forming agent, wherein the sensitizer is ammonium dichromate (ADC), chromate, diazo compound or a combination of one or more of azide-based compounds; the film-forming agent is polyvinyl alcohol (PVA) ), gum arabic, polyimide, or a combination of one or more of polyvinyl acetate emulsions.

在步骤(4)中,所述涂覆为将步骤(3)所得的GQDs复合封装基质材料封装基质直接涂覆在LED芯片表面上作为抽光层,或者是作为荧光粉涂层的 remote层,提高芯片的光抽取效率和热稳定性;或者是将所述封装基质材料与荧光粉混合作为荧光粉层涂覆在LED芯片的发光表面上,或者涂覆在LED出光方向上一段距离的任一输出面上,提高荧光粉层的光抽取效率和热稳定性;涂覆(coating)方式为旋涂法、喷涂法、点胶法、印刷法和浸渍法中的一种或者几种;所述的LED为有机LED、无机LED或者两者的组合;所述LED为单颗 LED芯片,或者是同一基板的多颗LED芯片组,或者是整个晶圆。In step (4), the coating is to directly coat the GQDs composite encapsulation matrix material encapsulation matrix obtained in step (3) on the surface of the LED chip as a light extraction layer, or as a remote layer of a phosphor coating, Improve the light extraction efficiency and thermal stability of the chip; or mix the encapsulation matrix material with the phosphor powder as a phosphor powder layer and coat it on the light-emitting surface of the LED chip, or coat it on any distance in the LED light-emitting direction. On the output surface, the light extraction efficiency and thermal stability of the phosphor layer are improved; the coating method is one or more of spin coating, spray coating, glue dispensing, printing and dipping; the The LED is an organic LED, an inorganic LED or a combination of the two; the LED is a single LED chip, or a plurality of LED chip groups on the same substrate, or a whole wafer.

在步骤(4)中,所述的固化方式为烤箱加热、电加热板或红外加热的一种或多种组合,固化的温度与时间根据胶体(例如硅胶)的性质要求而定;或者采用光固化,例如使用光致固化胶体、感光胶等。In step (4), the curing method is one or more combinations of oven heating, electric heating plate or infrared heating, and the curing temperature and time are determined according to the property requirements of the colloid (such as silica gel); For curing, for example, photocurable colloids, photoresist, etc. are used.

运用本技术可以对封装胶进行复合改性,实现封装基质折射率和导热系数的双提升LED,从而提高封装结构的光抽取效率并提高大电流环境下效率稳定性。Using this technology, the encapsulant can be compounded and modified to realize the double-enhancing LED of the refractive index and thermal conductivity of the encapsulation matrix, thereby improving the light extraction efficiency of the encapsulation structure and improving the efficiency stability in a high-current environment.

本发明技术不仅适合于蓝光LED芯片+黄光荧光粉的白光LED器件封装,也适用于蓝光LED芯片+多色荧光粉、紫外LED芯片+多色荧光粉(例如RGB 三基色荧光粉)的封装,也适用于量子点荧光粉(QDs)pc-LEDs(QD-pc-LEDs)器件的封装。The technology of the present invention is not only suitable for the packaging of white light LED devices with blue LED chips + yellow phosphors, but also for the packaging of blue LED chips + multi-color phosphors, ultraviolet LED chips + multi-color phosphors (such as RGB three-color phosphors) , is also suitable for the encapsulation of quantum dot phosphors (QDs) pc-LEDs (QD-pc-LEDs) devices.

运用本发明制备的复合封装基质可以有效提升封装材料的光抽取效率并改善芯片和荧光粉发光的热稳定性(大电流工作条件下芯片结温和QDs荧光粉体温度的有效减低),从而实现更高的器件效率,保证LED器件在大工作状态下长期稳定的高光通量输出。Using the composite encapsulation matrix prepared by the invention can effectively improve the light extraction efficiency of the encapsulation material and improve the thermal stability of the chip and the phosphor luminescence (effective reduction of the chip junction temperature and the QDs phosphor body temperature under high current working conditions), so as to achieve a higher efficiency. High device efficiency ensures long-term stable high luminous flux output of LED devices under large working conditions.

附图说明Description of drawings

图1为实施例1将制备复合封装基质作为荧光粉层涂覆在LED芯片表面的示意图。其中1为LED芯片,2为衬底,3为反射杯碗,4为石墨烯量子点,5 为荧光粉颗粒,6为填充硅胶。FIG. 1 is a schematic diagram of preparing a composite encapsulation matrix as a phosphor layer coated on the surface of an LED chip in Example 1. FIG. 1 is an LED chip, 2 is a substrate, 3 is a reflector cup, 4 is a graphene quantum dot, 5 is a phosphor particle, and 6 is a filled silica gel.

图2为实施例2将制备复合封装基质作为荧光粉层涂覆在LED芯片表面的示意图。其中1为LED芯片,2为衬底,3为反射杯碗,4为石墨烯量子点,5 为荧光粉颗粒,6为光固化胶体。FIG. 2 is a schematic diagram of preparing a composite encapsulation matrix as a phosphor layer coated on the surface of an LED chip in Example 2. FIG. 1 is an LED chip, 2 is a substrate, 3 is a reflector cup, 4 is a graphene quantum dot, 5 is a phosphor particle, and 6 is a light-curing colloid.

图3为实施例3将制备复合封装基质作为抽光(remote)层涂覆在LED芯片表面的示意图。其中1为LED芯片,2衬底,3为反射杯碗,4为石墨烯量子点, 5为填充硅胶。FIG. 3 is a schematic diagram of preparing a composite encapsulation matrix as a remote layer coated on the surface of an LED chip in Example 3. FIG. 1 is an LED chip, 2 is a substrate, 3 is a reflector cup, 4 is a graphene quantum dot, and 5 is a filled silica gel.

具体实施方式Detailed ways

下面结合附图以及实施例对本发明作进一步描述:Below in conjunction with accompanying drawing and embodiment, the present invention is further described:

实施例1Example 1

称量1g的石墨粉,量取23ml质量分数为98%的浓硫酸,将石墨粉和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1小时;称取 3g的高锰酸钾缓慢分批次加入到混合液中,继续搅拌3小时;移去冰水浴,换成水浴,将水浴温度设置为35度,反应时间为30min;将水浴温度升高至80 度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphite powder, take 23ml of concentrated sulfuric acid with a mass fraction of 98%, mix the graphite powder and concentrated sulfuric acid in a beaker, put the beaker in an ice-water bath, and stir at a speed of 300rpm for 1 hour; weigh 3g of Potassium permanganate was slowly added to the mixed solution in batches, and stirring was continued for 3 hours; the ice-water bath was removed, replaced with a water bath, the temperature of the water bath was set to 35 degrees, and the reaction time was 30 min; the temperature of the water bath was raised to 80 degrees, Add 40ml of pure or deionized water dropwise for 30min.

取10ml的浓盐酸按照1:9的比例进行稀释,将反应液用稀释后的稀盐酸进行洗涤、离心,使用去离子水洗涤离心直至溶液PH值接近7,超声处理半小时;然后用截留分子量为8000~14000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终的到氧化石墨烯粉末。Take 10ml of concentrated hydrochloric acid and dilute it at a ratio of 1:9, wash and centrifuge the reaction solution with diluted hydrochloric acid, use deionized water to wash and centrifuge until the pH value of the solution is close to 7, and ultrasonically treat for half an hour; then use molecular weight cut-off Dialyze the dialysis bag of 8000-14000 for one week, and change the water twice a day; dry the dialysis suspension in a freeze dryer, and finally get the graphene oxide powder.

称量1g氧化石墨烯粉末,量取25ml质量分数为98%的浓硫酸,将氧化石墨烯和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1 小时;移去冰水浴,称取0.6g的高锰酸钾加入到混合液中,室温下继续搅拌2 小时;换成水浴,将水浴温度设置为45度,反应时间为60min;将水浴温度升高至90度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphene oxide powder, measure 25ml of concentrated sulfuric acid with a mass fraction of 98%, mix graphene oxide and concentrated sulfuric acid in a beaker, place the beaker in an ice-water bath, and stir for 1 hour at a speed of 300rpm; remove In an ice-water bath, 0.6 g of potassium permanganate was weighed and added to the mixed solution, and stirring was continued for 2 hours at room temperature; replaced with a water bath, the temperature of the water bath was set to 45 degrees, and the reaction time was 60 min; the temperature of the water bath was raised to 90 degrees , 40ml of pure water or deionized water was added dropwise for 30min.

将反应后的氧化石墨烯量子点溶液配成1mg/ml溶液,氧化石墨烯与水合肼质量配比为10:7,加入水合肼后将其放在90~95度水浴中还原,1h后取出。The reacted graphene oxide quantum dot solution was prepared into a 1 mg/ml solution, and the mass ratio of graphene oxide to hydrazine hydrate was 10:7. After adding hydrazine hydrate, it was placed in a 90-95 degree water bath for reduction, and taken out after 1 hour. .

将反应后悬浮液用0.22um的滤膜进行过滤,然后用截留分子量为 3000~8000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终得到6nm左右的石墨烯量子点;The suspension after the reaction was filtered with a 0.22um filter membrane, and then dialyzed with a dialysis bag with a molecular weight cut-off of 3000-8000 for a week, and the water was changed twice a day; the dialysis suspension was dried in a freeze dryer, and finally 6nm was obtained. left and right graphene quantum dots;

将质量分数0.1wt%~1wt%石墨烯量子点加入到光学硅胶,即可形成稳定的GQDs/Silicone复合封装基质材料;A stable GQDs/Silicone composite encapsulation matrix material can be formed by adding the graphene quantum dots with a mass fraction of 0.1wt% to 1wt% to the optical silica gel;

取0.8g的复合基质并加入0.1g荧光粉充分搅拌,脱泡机抽真空除去气泡后,采用自由点胶法涂覆在LED芯片表面,用光电烤箱于150℃加热1h固化,所得结构如附图1所示。Take 0.8g of the composite matrix and add 0.1g of phosphor powder and stir well. After the defoaming machine is evacuated to remove air bubbles, it is coated on the surface of the LED chip by the free dispensing method, and cured by heating at 150 °C for 1 hour in a photoelectric oven. The obtained structure is as attached. Figure 1.

实施例2Example 2

称量1g的石墨粉,量取23ml质量分数为98%的浓硫酸,将石墨粉和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1小时;称取 3g的高锰酸钾缓慢分批次加入到混合液中,继续搅拌3小时;移去冰水浴,换成水浴,将水浴温度设置为35度,反应时间为30min;将水浴温度升高至80 度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphite powder, take 23ml of concentrated sulfuric acid with a mass fraction of 98%, mix the graphite powder and concentrated sulfuric acid in a beaker, put the beaker in an ice-water bath, and stir at a speed of 300rpm for 1 hour; weigh 3g of Potassium permanganate was slowly added to the mixed solution in batches, and stirring was continued for 3 hours; the ice-water bath was removed, replaced with a water bath, the temperature of the water bath was set to 35 degrees, and the reaction time was 30 min; the temperature of the water bath was raised to 80 degrees, Add 40ml of pure or deionized water dropwise for 30min.

取10ml的浓盐酸按照1:9的比例进行稀释,将反应液用稀释后的稀盐酸进行洗涤、离心,使用去离子水洗涤离心直至溶液PH值接近7,超声处理半小时;然后用截留分子量为8000~14000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终的到氧化石墨烯粉末。Take 10ml of concentrated hydrochloric acid and dilute it at a ratio of 1:9, wash and centrifuge the reaction solution with diluted hydrochloric acid, use deionized water to wash and centrifuge until the pH value of the solution is close to 7, and ultrasonically treat for half an hour; then use molecular weight cut-off Dialyze the dialysis bag of 8000-14000 for one week, and change the water twice a day; dry the dialysis suspension in a freeze dryer, and finally get the graphene oxide powder.

称量1g氧化石墨烯粉末,量取25ml质量分数为98%的浓硫酸,将氧化石墨烯和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1 小时;移去冰水浴,称取0.6g的高锰酸钾加入到混合液中,室温下继续搅拌2 小时;换成水浴,将水浴温度设置为45度,反应时间为60min;将水浴温度升高至90度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphene oxide powder, measure 25ml of concentrated sulfuric acid with a mass fraction of 98%, mix graphene oxide and concentrated sulfuric acid in a beaker, place the beaker in an ice-water bath, and stir for 1 hour at a speed of 300rpm; remove In an ice-water bath, 0.6 g of potassium permanganate was weighed and added to the mixed solution, and stirring was continued for 2 hours at room temperature; replaced with a water bath, the temperature of the water bath was set to 45 degrees, and the reaction time was 60 min; the temperature of the water bath was raised to 90 degrees , 40ml of pure water or deionized water was added dropwise for 30min.

将反应后的氧化石墨烯量子点溶液配成1mg/ml溶液,氧化石墨烯与水合肼质量配比为10:7,加入水合肼后将其放在90~95度水浴中还原,1h后取出。The reacted graphene oxide quantum dot solution was prepared into a 1 mg/ml solution, and the mass ratio of graphene oxide to hydrazine hydrate was 10:7. After adding hydrazine hydrate, it was placed in a 90-95 degree water bath for reduction, and taken out after 1 hour. .

将反应后悬浮液用0.22um的滤膜进行过滤,然后用截留分子量为 3000~8000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终得到6nm左右的石墨烯量子点;The suspension after the reaction was filtered with a 0.22um filter membrane, and then dialyzed with a dialysis bag with a molecular weight cut-off of 3000-8000 for a week, and the water was changed twice a day; the dialysis suspension was dried in a freeze dryer, and finally 6nm was obtained. left and right graphene quantum dots;

取0.72ml浓度为PVA水溶液和0.68ml浓度为0.26%的ADC溶液中混合,加入0.01g~0.1g的石墨烯量子点和0.4g荧光粉充分搅拌后,采用自适应涂覆法进行光固化,所得结构如附图2所示。Mix 0.72ml of PVA aqueous solution and 0.68ml of ADC solution with 0.26% concentration, add 0.01g-0.1g of graphene quantum dots and 0.4g of phosphor powder, and fully stir, and use adaptive coating method for photocuring. The resulting structure is shown in FIG. 2 .

实施例3Example 3

称量1g的石墨粉和0.5g的硝酸钠,量取20ml质量分数为98%的浓硫酸和 5ml质量分数为69%的浓硝酸,将石墨粉、硝酸钠、浓硫酸、浓硝酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1小时;称取3g的高锰酸钾缓慢分批次加入到混合液中,继续搅拌3小时;移去冰水浴,换成水浴,将水浴温度设置为35度,反应时间为60min;将水浴温度升高至80度,滴加40ml 的纯水或者去离子水,持续时间为30min。Weigh 1g of graphite powder and 0.5g of sodium nitrate, measure 20ml of concentrated sulfuric acid with a mass fraction of 98% and 5ml of concentrated nitric acid with a mass fraction of 69%, put graphite powder, sodium nitrate, concentrated sulfuric acid and concentrated nitric acid in a beaker Mix, place the beaker in an ice-water bath, and stir for 1 hour at a speed of 300 rpm; weigh 3 g of potassium permanganate and slowly add it to the mixture in batches, and continue to stir for 3 hours; remove the ice-water bath and replace it with a water bath, The temperature of the water bath was set to 35 degrees, and the reaction time was 60 minutes; the temperature of the water bath was raised to 80 degrees, and 40 ml of pure water or deionized water was added dropwise for 30 minutes.

取10ml的浓盐酸按照1:9的比例进行稀释,将反应液用稀释后的稀盐酸进行洗涤、离心,使用去离子水洗涤离心直至溶液PH值接近7,超声处理半小时;然后用截留分子量为8000~14000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终的到氧化石墨烯粉末。Take 10ml of concentrated hydrochloric acid and dilute it at a ratio of 1:9, wash and centrifuge the reaction solution with diluted hydrochloric acid, use deionized water to wash and centrifuge until the pH value of the solution is close to 7, and ultrasonically treat for half an hour; then use molecular weight cut-off Dialyze the dialysis bag of 8000-14000 for one week, and change the water twice a day; dry the dialysis suspension in a freeze dryer, and finally get the graphene oxide powder.

称量1g氧化石墨烯粉末,量取25ml质量分数为98%的浓硫酸,将氧化石墨烯和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1 小时;移去冰水浴,称取0.6g的高锰酸钾加入到混合液中,室温下继续搅拌2 小时;换成水浴,将水浴温度设置为45度,反应时间为60min;将水浴温度升高至90度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphene oxide powder, measure 25ml of concentrated sulfuric acid with a mass fraction of 98%, mix graphene oxide and concentrated sulfuric acid in a beaker, place the beaker in an ice-water bath, and stir for 1 hour at a speed of 300rpm; remove In an ice-water bath, 0.6 g of potassium permanganate was weighed and added to the mixed solution, and stirring was continued for 2 hours at room temperature; replaced with a water bath, the temperature of the water bath was set to 45 degrees, and the reaction time was 60 min; the temperature of the water bath was raised to 90 degrees , 40ml of pure water or deionized water was added dropwise for 30min.

将反应后的氧化石墨烯量子点溶液配成1mg/ml溶液,氧化石墨烯与水合肼质量配比为10:7,加入水合肼后将其放在90~95度水浴中还原,1h后取出。The reacted graphene oxide quantum dot solution was prepared into a 1 mg/ml solution, and the mass ratio of graphene oxide to hydrazine hydrate was 10:7. After adding hydrazine hydrate, it was placed in a 90-95 degree water bath for reduction, and taken out after 1 hour. .

将反应后悬浮液用0.22um的滤膜进行过滤,然后用截留分子量为 3000~8000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终得到6nm左右石墨烯量子点;The suspension after the reaction was filtered with a 0.22um filter membrane, and then dialyzed with a dialysis bag with a molecular weight cut-off of 3000-8000 for a week, and the water was changed twice a day; the dialysis suspension was dried in a freeze dryer, and finally 6nm was obtained. Left and right graphene quantum dots;

将0.1wt%~1wt%石墨烯量子点加入到光学硅胶充分中搅拌,即可形成稳定的GQDs/Silicone复合封装基质材料;Add 0.1wt% to 1wt% graphene quantum dots into the optical silica gel and stir well to form a stable GQDs/Silicone composite encapsulation matrix material;

将复合基质加入正己烷稀释,然后采用喷涂法,将LED置于加热板上,直接在LED芯片表面上喷涂一层remote层,之后用光电烤箱于150℃加热1h固化,所得结构如附图3所示。The composite matrix was diluted with n-hexane, and then the LED was placed on a heating plate by spraying method, and a layer of remote layer was directly sprayed on the surface of the LED chip, and then cured by heating at 150 °C for 1 h in a photoelectric oven. The obtained structure is shown in Figure 3. shown.

实施例4Example 4

称量1g的石墨粉,量取23ml质量分数为98%的浓硫酸,将石墨粉和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1小时;称取 3g的高锰酸钾缓慢分批次加入到混合液中,继续搅拌3小时;移去冰水浴,换成水浴,将水浴温度设置为35度,反应时间为30min;将水浴温度升高至80 度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphite powder, take 23ml of concentrated sulfuric acid with a mass fraction of 98%, mix the graphite powder and concentrated sulfuric acid in a beaker, put the beaker in an ice-water bath, and stir at a speed of 300rpm for 1 hour; weigh 3g of Potassium permanganate was slowly added to the mixed solution in batches, and stirring was continued for 3 hours; the ice-water bath was removed, replaced with a water bath, the temperature of the water bath was set to 35 degrees, and the reaction time was 30 min; the temperature of the water bath was raised to 80 degrees, Add 40ml of pure or deionized water dropwise for 30min.

取10ml的浓盐酸按照1:9的比例进行稀释,将反应液用稀释后的稀盐酸进行洗涤、离心,使用去离子水洗涤离心直至溶液PH值接近7,超声处理半小时;然后用截留分子量为8000~14000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终的到氧化石墨烯粉末。Take 10ml of concentrated hydrochloric acid and dilute it at a ratio of 1:9, wash and centrifuge the reaction solution with diluted hydrochloric acid, use deionized water to wash and centrifuge until the pH value of the solution is close to 7, and ultrasonically treat for half an hour; then use molecular weight cut-off Dialyze the dialysis bag of 8000-14000 for one week, and change the water twice a day; dry the dialysis suspension in a freeze dryer, and finally get the graphene oxide powder.

称量1g氧化石墨烯粉末,量取25ml质量分数为98%的浓硫酸,将氧化石墨烯和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1 小时;移去冰水浴,称取0.6g的高锰酸钾加入到混合液中,室温下继续搅拌2 小时;换成水浴,将水浴温度设置为45度,反应时间为60min;将水浴温度升高至90度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphene oxide powder, measure 25ml of concentrated sulfuric acid with a mass fraction of 98%, mix graphene oxide and concentrated sulfuric acid in a beaker, place the beaker in an ice-water bath, and stir for 1 hour at a speed of 300rpm; remove In an ice-water bath, 0.6 g of potassium permanganate was weighed and added to the mixed solution, and stirring was continued for 2 hours at room temperature; replaced with a water bath, the temperature of the water bath was set to 45 degrees, and the reaction time was 60 min; the temperature of the water bath was raised to 90 degrees , 40ml of pure water or deionized water was added dropwise for 30min.

将反应后的氧化石墨烯量子点溶液配成1mg/ml溶液,氧化石墨烯与水合肼质量配比为10:7,加入水合肼后将其放在90~95度水浴中还原,1h后取出。The reacted graphene oxide quantum dot solution was prepared into a 1 mg/ml solution, and the mass ratio of graphene oxide to hydrazine hydrate was 10:7. After adding hydrazine hydrate, it was placed in a 90-95 degree water bath for reduction, and taken out after 1 hour. .

将反应后悬浮液用0.22um的滤膜进行过滤,然后用截留分子量为3000~8000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终得到6nm左右的石墨烯量子点;The suspension after the reaction was filtered with a 0.22um filter membrane, and then dialyzed with a dialysis bag with a molecular weight cut-off of 3000-8000 for a week, and the water was changed twice a day; the dialysis suspension was dried in a freeze dryer, and finally 6nm was obtained. left and right graphene quantum dots;

将质量分数0.1wt%~1wt%石墨烯量子点加入到光学硅胶,即可形成稳定的GQDs/Silicone复合封装基质材料;A stable GQDs/Silicone composite encapsulation matrix material can be formed by adding the graphene quantum dots with a mass fraction of 0.1wt% to 1wt% to the optical silica gel;

取0.8g的复合基质并加入0.1g荧光粉充分搅拌,脱泡机抽真空除去气泡后,采用自由点胶法涂覆在LED芯片表面,用光电烤箱于150℃加热1h固化。Take 0.8g of the composite matrix and add 0.1g of phosphor powder and stir it thoroughly. After the bubbles are removed by vacuuming with a defoaming machine, it is coated on the surface of the LED chip by a free dispensing method, and cured by heating at 150 °C for 1 h in a photoelectric oven.

实施例5Example 5

称量1g的石墨粉和0.5g的硝酸钠,量取20ml质量分数为98%的浓硫酸和 5ml质量分数为69%的浓硝酸,将石墨粉、硝酸钠、浓硫酸、浓硝酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1小时;称取3g的高锰酸钾缓慢分批次加入到混合液中,继续搅拌3小时;移去冰水浴,换成水浴,将水浴温度设置为35度,反应时间为30min;将水浴温度升高至80度,滴加40ml 的纯水或者去离子水,持续时间为30min。Weigh 1g of graphite powder and 0.5g of sodium nitrate, measure 20ml of concentrated sulfuric acid with a mass fraction of 98% and 5ml of concentrated nitric acid with a mass fraction of 69%, put graphite powder, sodium nitrate, concentrated sulfuric acid and concentrated nitric acid in a beaker Mix, place the beaker in an ice-water bath, and stir for 1 hour at a speed of 300 rpm; weigh 3 g of potassium permanganate and slowly add it to the mixture in batches, and continue to stir for 3 hours; remove the ice-water bath and replace it with a water bath, The temperature of the water bath was set to 35 degrees, and the reaction time was 30 minutes; the temperature of the water bath was raised to 80 degrees, and 40 ml of pure water or deionized water was added dropwise for 30 minutes.

取10ml的浓盐酸按照1:9的比例进行稀释,将反应液用稀释后的稀盐酸进行洗涤、离心,使用去离子水洗涤离心直至溶液PH值接近7,超声处理半小时;然后用截留分子量为8000~14000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终的到氧化石墨烯粉末。Take 10ml of concentrated hydrochloric acid and dilute it at a ratio of 1:9, wash and centrifuge the reaction solution with diluted hydrochloric acid, use deionized water to wash and centrifuge until the pH value of the solution is close to 7, and ultrasonically treat for half an hour; then use molecular weight cut-off Dialyze the dialysis bag of 8000-14000 for one week, and change the water twice a day; dry the dialysis suspension in a freeze dryer, and finally get the graphene oxide powder.

称量1g氧化石墨烯粉末,量取25ml质量分数为98%的浓硫酸,将氧化石墨烯和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1 小时;移去冰水浴,称取0.6g的高锰酸钾加入到混合液中,室温下继续搅拌2 小时;换成水浴,将水浴温度设置为45度,反应时间为60min;将水浴温度升高至90度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphene oxide powder, measure 25ml of concentrated sulfuric acid with a mass fraction of 98%, mix graphene oxide and concentrated sulfuric acid in a beaker, place the beaker in an ice-water bath, and stir for 1 hour at a speed of 300rpm; remove In an ice-water bath, 0.6 g of potassium permanganate was weighed and added to the mixed solution, and stirring was continued for 2 hours at room temperature; replaced with a water bath, the temperature of the water bath was set to 45 degrees, and the reaction time was 60 min; the temperature of the water bath was raised to 90 degrees , 40ml of pure water or deionized water was added dropwise for 30min.

将反应后的氧化石墨烯量子点溶液配成1mg/ml溶液,氧化石墨烯与水合肼质量配比为10:7,加入水合肼后将其放在90~95度水浴中还原,1h后取出。The reacted graphene oxide quantum dot solution was prepared into a 1 mg/ml solution, and the mass ratio of graphene oxide to hydrazine hydrate was 10:7. After adding hydrazine hydrate, it was placed in a 90-95 degree water bath for reduction, and taken out after 1 hour. .

将反应后悬浮液用0.22um的滤膜进行过滤,然后用截留分子量为 3000~8000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终得到6nm左右石墨烯量子点;The suspension after the reaction was filtered with a 0.22um filter membrane, and then dialyzed with a dialysis bag with a molecular weight cut-off of 3000-8000 for a week, and the water was changed twice a day; the dialysis suspension was dried in a freeze dryer, and finally 6nm was obtained. Left and right graphene quantum dots;

将0.1wt%~1wt%石墨烯量子点加入到光学硅胶充分中搅拌,即可形成稳定的GQDs/Silicone复合封装基质材料;Add 0.1wt% to 1wt% graphene quantum dots into the optical silica gel and stir well to form a stable GQDs/Silicone composite encapsulation matrix material;

取0.8g的复合基质并加入0.1g荧光粉充分搅拌,脱泡机抽真空除去气泡后,采用自由点胶法涂覆在LED芯片表面,用光电烤箱于150℃加热1h固化。Take 0.8g of the composite matrix and add 0.1g of phosphor powder and stir it thoroughly. After the bubbles are removed by vacuuming with a defoaming machine, it is coated on the surface of the LED chip by a free dispensing method, and cured by heating at 150 °C for 1 h in a photoelectric oven.

实施例6Example 6

称量1g的石墨粉和0.5g的硝酸钠,量取20ml质量分数为98%的浓硫酸和 5ml质量分数为69%的浓硝酸,将石墨粉、硝酸钠、浓硫酸、浓硝酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1小时;称取3g的高锰酸钾缓慢分批次加入到混合液中,继续搅拌3小时;移去冰水浴,换成水浴,将水浴温度设置为35度,反应时间为30min;将水浴温度升高至80度,滴加40ml 的纯水或者去离子水,持续时间为30min。Weigh 1g of graphite powder and 0.5g of sodium nitrate, measure 20ml of concentrated sulfuric acid with a mass fraction of 98% and 5ml of concentrated nitric acid with a mass fraction of 69%, put graphite powder, sodium nitrate, concentrated sulfuric acid and concentrated nitric acid in a beaker Mix, place the beaker in an ice-water bath, and stir for 1 hour at a speed of 300 rpm; weigh 3 g of potassium permanganate and slowly add it to the mixture in batches, and continue to stir for 3 hours; remove the ice-water bath and replace it with a water bath, The temperature of the water bath was set to 35 degrees, and the reaction time was 30 minutes; the temperature of the water bath was raised to 80 degrees, and 40 ml of pure water or deionized water was added dropwise for 30 minutes.

取10ml的浓盐酸按照1:9的比例进行稀释,将反应液用稀释后的稀盐酸进行洗涤、离心,使用去离子水洗涤离心直至溶液PH值接近7,超声处理半小时;然后用截留分子量为8000~14000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终的到氧化石墨烯粉末。Take 10ml of concentrated hydrochloric acid and dilute it at a ratio of 1:9, wash and centrifuge the reaction solution with diluted hydrochloric acid, use deionized water to wash and centrifuge until the pH value of the solution is close to 7, and ultrasonically treat for half an hour; then use molecular weight cut-off Dialyze the dialysis bag of 8000-14000 for one week, and change the water twice a day; dry the dialysis suspension in a freeze dryer, and finally get the graphene oxide powder.

称量1g氧化石墨烯粉末,量取25ml质量分数为98%的浓硫酸,将氧化石墨烯和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1 小时;移去冰水浴,称取0.6g的高锰酸钾加入到混合液中,室温下继续搅拌2 小时;换成水浴,将水浴温度设置为45度,反应时间为90min;将水浴温度升高至90度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphene oxide powder, measure 25ml of concentrated sulfuric acid with a mass fraction of 98%, mix graphene oxide and concentrated sulfuric acid in a beaker, place the beaker in an ice-water bath, and stir for 1 hour at a speed of 300rpm; remove In an ice-water bath, 0.6 g of potassium permanganate was weighed and added to the mixed solution, and stirring was continued for 2 hours at room temperature; replaced with a water bath, the temperature of the water bath was set to 45 degrees, and the reaction time was 90 min; the temperature of the water bath was raised to 90 degrees , 40ml of pure water or deionized water was added dropwise for 30min.

将反应后的氧化石墨烯量子点溶液配成1mg/ml溶液,氧化石墨烯与水合肼质量配比为10:7,加入水合肼后将其放在90~95度水浴中还原,1h后取出。The reacted graphene oxide quantum dot solution was prepared into a 1 mg/ml solution, and the mass ratio of graphene oxide to hydrazine hydrate was 10:7. After adding hydrazine hydrate, it was placed in a 90-95 degree water bath for reduction, and taken out after 1 hour. .

将反应后悬浮液用0.22um的滤膜进行过滤,然后用截留分子量为 3000~8000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终得到6nm左右石墨烯量子点;The suspension after the reaction was filtered with a 0.22um filter membrane, and then dialyzed with a dialysis bag with a molecular weight cut-off of 3000-8000 for a week, and the water was changed twice a day; the dialysis suspension was dried in a freeze dryer, and finally 6nm was obtained. Left and right graphene quantum dots;

将0.1wt%~1wt%石墨烯量子点加入到光学硅胶充分中搅拌,即可形成稳定的GQDs/Silicone复合封装基质材料;Add 0.1wt% to 1wt% graphene quantum dots into the optical silica gel and stir well to form a stable GQDs/Silicone composite encapsulation matrix material;

取0.8g的复合基质并加入0.1g荧光粉充分搅拌,脱泡机抽真空除去气泡后,采用自由点胶法涂覆在LED芯片表面,用光电烤箱于150℃加热1h固化。Take 0.8g of the composite matrix and add 0.1g of phosphor powder and stir it thoroughly. After the bubbles are removed by vacuuming with a defoaming machine, it is coated on the surface of the LED chip by a free dispensing method, and cured by heating at 150 °C for 1 h in a photoelectric oven.

实施例7Example 7

称量1g的石墨粉和,量取21ml质量分数为98%的浓硫酸和3ml质量分数为85%的浓磷酸,将石墨粉、浓硫酸、浓磷酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1小时;称取3g的高锰酸钾缓慢分批次加入到混合液中,继续搅拌3小时;移去冰水浴,换成水浴,将水浴温度设置为35度,反应时间为30min;将水浴温度升高至80度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphite powder and 21ml of concentrated sulfuric acid with a mass fraction of 98% and 3ml of concentrated phosphoric acid with a mass fraction of 85%. Mix the graphite powder, concentrated sulfuric acid and concentrated phosphoric acid in a beaker, and place the beaker in an ice-water bath. , while stirring at a speed of 300rpm for 1 hour; take 3g of potassium permanganate slowly and add it to the mixture in batches, and continue to stir for 3 hours; remove the ice-water bath, replace it with a water bath, and set the water bath temperature to 35 degrees, The reaction time was 30 minutes; the temperature of the water bath was raised to 80 degrees, and 40 ml of pure water or deionized water was added dropwise for 30 minutes.

取10ml的浓盐酸按照1:9的比例进行稀释,将反应液用稀释后的稀盐酸进行洗涤、离心,使用去离子水洗涤离心直至溶液PH值接近7,超声处理半小时;然后用截留分子量为8000~14000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终的到氧化石墨烯粉末。Take 10ml of concentrated hydrochloric acid and dilute it at a ratio of 1:9, wash and centrifuge the reaction solution with diluted hydrochloric acid, use deionized water to wash and centrifuge until the pH value of the solution is close to 7, and ultrasonically treat for half an hour; then use molecular weight cut-off Dialyze the dialysis bag of 8000-14000 for one week, and change the water twice a day; dry the dialysis suspension in a freeze dryer, and finally get the graphene oxide powder.

称量1g氧化石墨烯粉末,量取25ml质量分数为98%的浓硫酸,将氧化石墨烯和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1 小时;移去冰水浴,称取0.6g的高锰酸钾加入到混合液中,室温下继续搅拌2 小时;换成水浴,将水浴温度设置为45度,反应时间为60min;将水浴温度升高至90度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphene oxide powder, measure 25ml of concentrated sulfuric acid with a mass fraction of 98%, mix graphene oxide and concentrated sulfuric acid in a beaker, place the beaker in an ice-water bath, and stir for 1 hour at a speed of 300rpm; remove In an ice-water bath, 0.6 g of potassium permanganate was weighed and added to the mixed solution, and stirring was continued for 2 hours at room temperature; replaced with a water bath, the temperature of the water bath was set to 45 degrees, and the reaction time was 60 min; the temperature of the water bath was raised to 90 degrees , 40ml of pure water or deionized water was added dropwise for 30min.

将反应后的氧化石墨烯量子点溶液配成1mg/ml溶液,氧化石墨烯与水合肼质量配比为10:7,加入水合肼后将其放在90~95度水浴中还原,1h后取出。The reacted graphene oxide quantum dot solution was prepared into a 1 mg/ml solution, and the mass ratio of graphene oxide to hydrazine hydrate was 10:7. After adding hydrazine hydrate, it was placed in a 90-95 degree water bath for reduction, and taken out after 1 hour. .

将反应后悬浮液用0.22um的滤膜进行过滤,然后用截留分子量为 3000~8000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终得到7nm左右石墨烯量子点;The suspension after the reaction was filtered with a 0.22um filter membrane, and then dialyzed with a dialysis bag with a molecular weight cut-off of 3000-8000 for a week, and the water was changed twice a day; the suspension after dialysis was dried in a freeze dryer, and finally 7nm was obtained. Left and right graphene quantum dots;

将0.1wt%~1wt%石墨烯量子点加入到光学硅胶充分中搅拌,即可形成稳定的GQDs/Silicone复合封装基质材料;Add 0.1wt% to 1wt% graphene quantum dots into the optical silica gel and stir well to form a stable GQDs/Silicone composite encapsulation matrix material;

取0.8g的复合基质并加入0.1g荧光粉充分搅拌,脱泡机抽真空除去气泡后,采用自由点胶法涂覆在LED芯片表面,用光电烤箱于150℃加热1h固化。Take 0.8g of the composite matrix and add 0.1g of phosphor powder and stir it thoroughly. After the bubbles are removed by vacuuming with a defoaming machine, it is coated on the surface of the LED chip by a free dispensing method, and cured by heating at 150 °C for 1 h in a photoelectric oven.

实施例8Example 8

称量1g的石墨粉和,量取21ml质量分数为98%的浓硫酸和3ml质量分数为85%的浓磷酸,将石墨粉、浓硫酸、浓磷酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1小时;称取3g的高锰酸钾缓慢分批次加入到混合液中,继续搅拌3小时;移去冰水浴,换成水浴,将水浴温度设置为35度,反应时间为60min;将水浴温度升高至80度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphite powder and 21ml of concentrated sulfuric acid with a mass fraction of 98% and 3ml of concentrated phosphoric acid with a mass fraction of 85%. Mix the graphite powder, concentrated sulfuric acid and concentrated phosphoric acid in a beaker, and place the beaker in an ice-water bath. , while stirring at a speed of 300rpm for 1 hour; take 3g of potassium permanganate slowly and add it to the mixture in batches, and continue to stir for 3 hours; remove the ice-water bath, replace it with a water bath, and set the water bath temperature to 35 degrees, The reaction time was 60 minutes; the temperature of the water bath was raised to 80 degrees, and 40 ml of pure water or deionized water was added dropwise for 30 minutes.

取10ml的浓盐酸按照1:9的比例进行稀释,将反应液用稀释后的稀盐酸进行洗涤、离心,使用去离子水洗涤离心直至溶液PH值接近7,超声处理半小时;然后用截留分子量为8000~14000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终的到氧化石墨烯粉末。Take 10ml of concentrated hydrochloric acid and dilute it at a ratio of 1:9, wash and centrifuge the reaction solution with diluted hydrochloric acid, use deionized water to wash and centrifuge until the pH value of the solution is close to 7, and ultrasonically treat for half an hour; then use molecular weight cut-off Dialyze the dialysis bag of 8000-14000 for one week, and change the water twice a day; dry the dialysis suspension in a freeze dryer, and finally get the graphene oxide powder.

称量1g氧化石墨烯粉末,量取25ml质量分数为98%的浓硫酸,将氧化石墨烯和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1 小时;移去冰水浴,称取0.6g的高锰酸钾加入到混合液中,室温下继续搅拌2 小时;换成水浴,将水浴温度设置为45度,反应时间为60min;将水浴温度升高至90度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphene oxide powder, measure 25ml of concentrated sulfuric acid with a mass fraction of 98%, mix graphene oxide and concentrated sulfuric acid in a beaker, place the beaker in an ice-water bath, and stir for 1 hour at a speed of 300rpm; remove In an ice-water bath, 0.6 g of potassium permanganate was weighed and added to the mixed solution, and stirring was continued for 2 hours at room temperature; replaced with a water bath, the temperature of the water bath was set to 45 degrees, and the reaction time was 60 min; the temperature of the water bath was raised to 90 degrees , 40ml of pure water or deionized water was added dropwise for 30min.

将反应后的氧化石墨烯量子点溶液配成1mg/ml溶液,氧化石墨烯与水合肼质量配比为10:7,加入水合肼后将其放在90~95度水浴中还原,1h后取出。The reacted graphene oxide quantum dot solution was prepared into a 1 mg/ml solution, and the mass ratio of graphene oxide to hydrazine hydrate was 10:7. After adding hydrazine hydrate, it was placed in a 90-95 degree water bath for reduction, and taken out after 1 hour. .

将反应后悬浮液用0.22um的滤膜进行过滤,然后用截留分子量为 3000~8000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终得到6nm左右石墨烯量子点;The suspension after the reaction was filtered with a 0.22um filter membrane, and then dialyzed with a dialysis bag with a molecular weight cut-off of 3000-8000 for a week, and the water was changed twice a day; the dialysis suspension was dried in a freeze dryer, and finally 6nm was obtained. Left and right graphene quantum dots;

将0.1wt%~1wt%石墨烯量子点加入到光学硅胶充分中搅拌,即可形成稳定的GQDs/Silicone复合封装基质材料;Add 0.1wt% to 1wt% graphene quantum dots into the optical silica gel and stir well to form a stable GQDs/Silicone composite encapsulation matrix material;

取0.8g的复合基质并加入0.1g荧光粉充分搅拌,脱泡机抽真空除去气泡后,采用自由点胶法涂覆在LED芯片表面,用光电烤箱于150℃加热1h固化。Take 0.8g of the composite matrix and add 0.1g of phosphor powder and stir it thoroughly. After the bubbles are removed by vacuuming with a defoaming machine, it is coated on the surface of the LED chip by a free dispensing method, and cured by heating at 150 °C for 1 h in a photoelectric oven.

实施例9Example 9

称量1g的石墨粉和,量取21ml质量分数为98%的浓硫酸和3ml质量分数为85%的浓磷酸,将石墨粉、浓硫酸、浓磷酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1小时;称取3g的高锰酸钾缓慢分批次加入到混合液中,继续搅拌3小时;移去冰水浴,换成水浴,将水浴温度设置为35度,反应时间为90min;将水浴温度升高至80度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphite powder and 21ml of concentrated sulfuric acid with a mass fraction of 98% and 3ml of concentrated phosphoric acid with a mass fraction of 85%. Mix the graphite powder, concentrated sulfuric acid and concentrated phosphoric acid in a beaker, and place the beaker in an ice-water bath. , while stirring at a speed of 300rpm for 1 hour; take 3g of potassium permanganate slowly and add it to the mixture in batches, and continue to stir for 3 hours; remove the ice-water bath, replace it with a water bath, and set the water bath temperature to 35 degrees, The reaction time was 90 minutes; the temperature of the water bath was raised to 80 degrees, and 40 ml of pure water or deionized water was added dropwise for 30 minutes.

取10ml的浓盐酸按照1:9的比例进行稀释,将反应液用稀释后的稀盐酸进行洗涤、离心,使用去离子水洗涤离心直至溶液PH值接近7,超声处理半小时;然后用截留分子量为8000~14000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终的到氧化石墨烯粉末。Take 10ml of concentrated hydrochloric acid and dilute it at a ratio of 1:9, wash and centrifuge the reaction solution with diluted hydrochloric acid, use deionized water to wash and centrifuge until the pH value of the solution is close to 7, and ultrasonically treat for half an hour; then use molecular weight cut-off Dialyze the dialysis bag of 8000-14000 for one week, and change the water twice a day; dry the dialysis suspension in a freeze dryer, and finally get the graphene oxide powder.

称量1g氧化石墨烯粉末,量取25ml质量分数为98%的浓硫酸,将氧化石墨烯和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1 小时;移去冰水浴,称取0.6g的高锰酸钾加入到混合液中,室温下继续搅拌2 小时;换成水浴,将水浴温度设置为45度,反应时间为60min;将水浴温度升高至90度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphene oxide powder, measure 25ml of concentrated sulfuric acid with a mass fraction of 98%, mix graphene oxide and concentrated sulfuric acid in a beaker, place the beaker in an ice-water bath, and stir for 1 hour at a speed of 300rpm; remove In an ice-water bath, 0.6 g of potassium permanganate was weighed and added to the mixed solution, and stirring was continued for 2 hours at room temperature; replaced with a water bath, the temperature of the water bath was set to 45 degrees, and the reaction time was 60 min; the temperature of the water bath was raised to 90 degrees , 40ml of pure water or deionized water was added dropwise for 30min.

将反应后的氧化石墨烯量子点溶液配成1mg/ml溶液,氧化石墨烯与水合肼质量配比为10:7,加入水合肼后将其放在90~95度水浴中还原,1h后取出。The reacted graphene oxide quantum dot solution was prepared into a 1 mg/ml solution, and the mass ratio of graphene oxide to hydrazine hydrate was 10:7. After adding hydrazine hydrate, it was placed in a 90-95 degree water bath for reduction, and taken out after 1 hour. .

将反应后悬浮液用0.22um的滤膜进行过滤,然后用截留分子量为 3000~8000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终得到6nm左右石墨烯量子点;The suspension after the reaction was filtered with a 0.22um filter membrane, and then dialyzed with a dialysis bag with a molecular weight cut-off of 3000-8000 for a week, and the water was changed twice a day; the dialysis suspension was dried in a freeze dryer, and finally 6nm was obtained. Left and right graphene quantum dots;

将0.1wt%~1wt%石墨烯量子点加入到光学硅胶充分中搅拌,即可形成稳定的GQDs/Silicone复合封装基质材料;Add 0.1wt% to 1wt% graphene quantum dots into the optical silica gel and stir well to form a stable GQDs/Silicone composite encapsulation matrix material;

取0.8g的复合基质并加入0.1g荧光粉充分搅拌,脱泡机抽真空除去气泡后,采用自由点胶法涂覆在LED芯片表面,用光电烤箱于150℃加热1h固化。Take 0.8g of the composite matrix and add 0.1g of phosphor powder and stir it thoroughly. After the bubbles are removed by vacuuming with a defoaming machine, it is coated on the surface of the LED chip by a free dispensing method, and cured by heating at 150 °C for 1 h in a photoelectric oven.

实施例10Example 10

称量1g的石墨粉,量取23ml质量分数为98%的浓硫酸,将石墨粉和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1小时;称取 3g的高锰酸钾缓慢分批次加入到混合液中,继续搅拌3小时;移去冰水浴,换成水浴,将水浴温度设置为35度,反应时间为60min;将水浴温度升高至80 度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphite powder, take 23ml of concentrated sulfuric acid with a mass fraction of 98%, mix the graphite powder and concentrated sulfuric acid in a beaker, put the beaker in an ice-water bath, and stir at a speed of 300rpm for 1 hour; weigh 3g of Potassium permanganate was slowly added to the mixed solution in batches, and continued stirring for 3 hours; the ice-water bath was removed, replaced with a water bath, the water bath temperature was set to 35 degrees, and the reaction time was 60 min; the water bath temperature was raised to 80 degrees, Add 40ml of pure or deionized water dropwise for 30min.

取10ml的浓盐酸按照1:9的比例进行稀释,将反应液用稀释后的稀盐酸进行洗涤、离心,使用去离子水洗涤离心直至溶液PH值接近7,超声处理半小时;然后用截留分子量为8000~14000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终的到氧化石墨烯粉末。Take 10ml of concentrated hydrochloric acid and dilute it at a ratio of 1:9, wash and centrifuge the reaction solution with diluted hydrochloric acid, use deionized water to wash and centrifuge until the pH value of the solution is close to 7, and ultrasonically treat for half an hour; then use molecular weight cut-off Dialyze the dialysis bag of 8000-14000 for one week, and change the water twice a day; dry the dialysis suspension in a freeze dryer, and finally get the graphene oxide powder.

称量1g氧化石墨烯粉末,量取25ml质量分数为98%的浓硫酸,将氧化石墨烯和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1 小时;移去冰水浴,称取0.6g的高锰酸钾加入到混合液中,室温下继续搅拌2 小时;换成水浴,将水浴温度设置为45度,反应时间为60min;将水浴温度升高至90度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphene oxide powder, measure 25ml of concentrated sulfuric acid with a mass fraction of 98%, mix graphene oxide and concentrated sulfuric acid in a beaker, place the beaker in an ice-water bath, and stir for 1 hour at a speed of 300rpm; remove In an ice-water bath, 0.6 g of potassium permanganate was weighed and added to the mixed solution, and stirring was continued for 2 hours at room temperature; replaced with a water bath, the temperature of the water bath was set to 45 degrees, and the reaction time was 60 min; the temperature of the water bath was raised to 90 degrees , 40ml of pure water or deionized water was added dropwise for 30min.

将反应后的氧化石墨烯量子点溶液配成1mg/ml溶液,氧化石墨烯与水合肼质量配比为10:7,加入水合肼后将其放在90~95度水浴中还原,1h后取出。The reacted graphene oxide quantum dot solution was prepared into a 1 mg/ml solution, and the mass ratio of graphene oxide to hydrazine hydrate was 10:7. After adding hydrazine hydrate, it was placed in a 90-95 degree water bath for reduction, and taken out after 1 hour. .

将反应后悬浮液用0.22um的滤膜进行过滤,然后用截留分子量为 3000~8000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终得到6nm左右石墨烯量子点;The suspension after the reaction was filtered with a 0.22um filter membrane, and then dialyzed with a dialysis bag with a molecular weight cut-off of 3000-8000 for a week, and the water was changed twice a day; the dialysis suspension was dried in a freeze dryer, and finally 6nm was obtained. Left and right graphene quantum dots;

将0.1wt%~1wt%石墨烯量子点加入到光学硅胶充分中搅拌,即可形成稳定的GQDs/Silicone复合封装基质材料;Add 0.1wt% to 1wt% graphene quantum dots into the optical silica gel and stir well to form a stable GQDs/Silicone composite encapsulation matrix material;

取0.8g的复合基质并加入0.1g荧光粉充分搅拌,脱泡机抽真空除去气泡后,采用自由点胶法涂覆在LED芯片表面,用光电烤箱于150℃加热1h固化。Take 0.8g of the composite matrix and add 0.1g of phosphor powder and stir it thoroughly. After the bubbles are removed by vacuuming with a defoaming machine, it is coated on the surface of the LED chip by a free dispensing method, and cured by heating at 150 °C for 1 h in a photoelectric oven.

实施例11Example 11

称量1g的石墨粉,量取23ml质量分数为98%的浓硫酸,将石墨粉和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1小时;称取 3g的高锰酸钾缓慢分批次加入到混合液中,继续搅拌3小时;移去冰水浴,换成水浴,将水浴温度设置为35度,反应时间为90min;将水浴温度升高至80 度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphite powder, take 23ml of concentrated sulfuric acid with a mass fraction of 98%, mix the graphite powder and concentrated sulfuric acid in a beaker, put the beaker in an ice-water bath, and stir at a speed of 300rpm for 1 hour; weigh 3g of Potassium permanganate was slowly added to the mixed solution in batches, and continued stirring for 3 hours; the ice-water bath was removed, replaced with a water bath, the temperature of the water bath was set to 35 degrees, and the reaction time was 90 min; the temperature of the water bath was raised to 80 degrees, Add 40ml of pure or deionized water dropwise for 30min.

取10ml的浓盐酸按照1:9的比例进行稀释,将反应液用稀释后的稀盐酸进行洗涤、离心,使用去离子水洗涤离心直至溶液PH值接近7,超声处理半小时;然后用截留分子量为8000~14000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终的到氧化石墨烯粉末。Take 10ml of concentrated hydrochloric acid and dilute it at a ratio of 1:9, wash and centrifuge the reaction solution with diluted hydrochloric acid, use deionized water to wash and centrifuge until the pH value of the solution is close to 7, and ultrasonically treat for half an hour; then use molecular weight cut-off Dialyze the dialysis bag of 8000-14000 for one week, and change the water twice a day; dry the dialysis suspension in a freeze dryer, and finally get the graphene oxide powder.

称量1g氧化石墨烯粉末,量取25ml质量分数为98%的浓硫酸,将氧化石墨烯和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1 小时;移去冰水浴,称取1g的高锰酸钾加入到混合液中,室温下继续搅拌2小时;换成水浴,将水浴温度设置为45度,反应时间为60min;将水浴温度升高至90度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphene oxide powder, measure 25ml of concentrated sulfuric acid with a mass fraction of 98%, mix graphene oxide and concentrated sulfuric acid in a beaker, place the beaker in an ice-water bath, and stir for 1 hour at a speed of 300rpm; remove In an ice-water bath, weigh 1 g of potassium permanganate and add it to the mixed solution, and continue stirring at room temperature for 2 hours; change to a water bath, set the water bath temperature to 45 degrees, and the reaction time to 60 minutes; increase the water bath temperature to 90 degrees, Add 40ml of pure or deionized water dropwise for 30min.

将反应后的氧化石墨烯量子点溶液配成1mg/ml溶液,氧化石墨烯与水合肼质量配比为10:7,加入水合肼后将其放在90~95度水浴中还原,1h后取出。The reacted graphene oxide quantum dot solution was prepared into a 1 mg/ml solution, and the mass ratio of graphene oxide to hydrazine hydrate was 10:7. After adding hydrazine hydrate, it was placed in a 90-95 degree water bath for reduction, and taken out after 1 hour. .

将反应后悬浮液用0.22um的滤膜进行过滤,然后用截留分子量为 3000~8000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终得到5nm左右石墨烯量子点;The suspension after the reaction was filtered with a 0.22um membrane, and then dialyzed with a dialysis bag with a molecular weight cut-off of 3000-8000 for a week, and the water was changed twice a day; the suspension after dialysis was dried in a freeze dryer to obtain 5nm Left and right graphene quantum dots;

将0.1wt%~1wt%石墨烯量子点加入到光学硅胶充分中搅拌,即可形成稳定的GQDs/Silicone复合封装基质材料;Add 0.1wt% to 1wt% graphene quantum dots into the optical silica gel and stir well to form a stable GQDs/Silicone composite encapsulation matrix material;

取0.8g的复合基质并加入0.1g荧光粉充分搅拌,脱泡机抽真空除去气泡后,采用自由点胶法涂覆在LED芯片表面,用光电烤箱于150℃加热1h固化。Take 0.8g of the composite matrix and add 0.1g of phosphor powder and stir it thoroughly. After the bubbles are removed by vacuuming with a defoaming machine, it is coated on the surface of the LED chip by a free dispensing method, and cured by heating at 150 °C for 1 h in a photoelectric oven.

实施例12Example 12

称量1g的石墨粉,量取26ml质量分数为98%的浓硫酸,将石墨粉和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1小时;称取 3g的高锰酸钾缓慢分批次加入到混合液中,继续搅拌3小时;移去冰水浴,换成水浴,将水浴温度设置为35度,反应时间为30min;将水浴温度升高至80 度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphite powder, take 26ml of concentrated sulfuric acid with a mass fraction of 98%, mix the graphite powder and concentrated sulfuric acid in a beaker, put the beaker in an ice-water bath, and stir at a speed of 300rpm for 1 hour; weigh 3g of Potassium permanganate was slowly added to the mixed solution in batches, and stirring was continued for 3 hours; the ice-water bath was removed, replaced with a water bath, the temperature of the water bath was set to 35 degrees, and the reaction time was 30 min; the temperature of the water bath was raised to 80 degrees, Add 40ml of pure or deionized water dropwise for 30min.

取10ml的浓盐酸按照1:9的比例进行稀释,将反应液用稀释后的稀盐酸进行洗涤、离心,使用去离子水洗涤离心直至溶液PH值接近7,超声处理半小时;然后用截留分子量为8000~14000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终的到氧化石墨烯粉末。Take 10ml of concentrated hydrochloric acid and dilute it at a ratio of 1:9, wash and centrifuge the reaction solution with diluted hydrochloric acid, use deionized water to wash and centrifuge until the pH value of the solution is close to 7, and ultrasonically treat for half an hour; then use molecular weight cut-off Dialyze the dialysis bag of 8000-14000 for one week, and change the water twice a day; dry the dialysis suspension in a freeze dryer, and finally get the graphene oxide powder.

称量1g氧化石墨烯粉末,量取25ml质量分数为98%的浓硫酸,将氧化石墨烯和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1 小时;移去冰水浴,称取0.8g的高锰酸钾加入到混合液中,室温下继续搅拌2 小时;换成水浴,将水浴温度设置为45度,反应时间为90min;将水浴温度升高至90度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphene oxide powder, measure 25ml of concentrated sulfuric acid with a mass fraction of 98%, mix graphene oxide and concentrated sulfuric acid in a beaker, place the beaker in an ice-water bath, and stir for 1 hour at a speed of 300rpm; remove In an ice-water bath, 0.8 g of potassium permanganate was weighed and added to the mixed solution, and stirring was continued for 2 hours at room temperature; replaced by a water bath, the temperature of the water bath was set to 45 degrees, and the reaction time was 90 min; the temperature of the water bath was raised to 90 degrees , 40ml of pure water or deionized water was added dropwise for 30min.

将反应后的氧化石墨烯量子点溶液配成1mg/ml溶液,氧化石墨烯与水合肼质量配比为10:7,加入水合肼后将其放在90~95度水浴中还原,1h后取出。The reacted graphene oxide quantum dot solution was prepared into a 1 mg/ml solution, and the mass ratio of graphene oxide to hydrazine hydrate was 10:7. After adding hydrazine hydrate, it was placed in a 90-95 degree water bath for reduction, and taken out after 1 hour. .

将反应后悬浮液用0.22um的滤膜进行过滤,然后用截留分子量为 3000~8000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终得到5nm左右石墨烯量子点;The suspension after the reaction was filtered with a 0.22um membrane, and then dialyzed with a dialysis bag with a molecular weight cut-off of 3000-8000 for a week, and the water was changed twice a day; the suspension after dialysis was dried in a freeze dryer to obtain 5nm Left and right graphene quantum dots;

将0.1wt%~1wt%石墨烯量子点加入到光学硅胶充分中搅拌,即可形成稳定的GQDs/Silicone复合封装基质材料;Add 0.1wt% to 1wt% graphene quantum dots into the optical silica gel and stir well to form a stable GQDs/Silicone composite encapsulation matrix material;

取0.8g的复合基质并加入0.1g荧光粉充分搅拌,脱泡机抽真空除去气泡后,采用自由点胶法涂覆在LED芯片表面,用光电烤箱于150℃加热1h固化。Take 0.8g of the composite matrix and add 0.1g of phosphor powder and stir it thoroughly. After the bubbles are removed by vacuuming with a defoaming machine, it is coated on the surface of the LED chip by a free dispensing method, and cured by heating at 150 °C for 1 h in a photoelectric oven.

实施例13Example 13

称量1g的石墨粉,量取26ml质量分数为98%的浓硫酸,将石墨粉和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1小时;称取 3g的高锰酸钾缓慢分批次加入到混合液中,继续搅拌3小时;移去冰水浴,换成水浴,将水浴温度设置为35度,反应时间为30min;将水浴温度升高至80 度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphite powder, take 26ml of concentrated sulfuric acid with a mass fraction of 98%, mix the graphite powder and concentrated sulfuric acid in a beaker, put the beaker in an ice-water bath, and stir at a speed of 300rpm for 1 hour; weigh 3g of Potassium permanganate was slowly added to the mixed solution in batches, and stirring was continued for 3 hours; the ice-water bath was removed, replaced with a water bath, the temperature of the water bath was set to 35 degrees, and the reaction time was 30 min; the temperature of the water bath was raised to 80 degrees, Add 40ml of pure or deionized water dropwise for 30min.

取10ml的浓盐酸按照1:9的比例进行稀释,将反应液用稀释后的稀盐酸进行洗涤、离心,使用去离子水洗涤离心直至溶液PH值接近7,超声处理半小时;然后用截留分子量为8000~14000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终的到氧化石墨烯粉末。Take 10ml of concentrated hydrochloric acid and dilute it at a ratio of 1:9, wash and centrifuge the reaction solution with diluted hydrochloric acid, use deionized water to wash and centrifuge until the pH value of the solution is close to 7, and ultrasonically treat for half an hour; then use molecular weight cut-off Dialyze the dialysis bag of 8000-14000 for one week, and change the water twice a day; dry the dialysis suspension in a freeze dryer, and finally get the graphene oxide powder.

称量1g氧化石墨烯粉末,量取25ml质量分数为98%的浓硫酸,将氧化石墨烯和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1 小时;移去冰水浴,称取0.8g的高锰酸钾加入到混合液中,室温下继续搅拌2 小时;换成水浴,将水浴温度设置为45度,反应时间为120min;将水浴温度升高至90度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphene oxide powder, measure 25ml of concentrated sulfuric acid with a mass fraction of 98%, mix graphene oxide and concentrated sulfuric acid in a beaker, place the beaker in an ice-water bath, and stir for 1 hour at a speed of 300rpm; remove In an ice-water bath, 0.8 g of potassium permanganate was weighed and added to the mixed solution, and stirring was continued for 2 hours at room temperature; replaced with a water bath, the temperature of the water bath was set to 45 degrees, and the reaction time was 120 min; the temperature of the water bath was raised to 90 degrees , 40ml of pure water or deionized water was added dropwise for 30min.

将反应后的氧化石墨烯量子点溶液配成1mg/ml溶液,氧化石墨烯与水合肼质量配比为10:7,加入水合肼后将其放在90~95度水浴中还原,1h后取出。The reacted graphene oxide quantum dot solution was prepared into a 1 mg/ml solution, and the mass ratio of graphene oxide to hydrazine hydrate was 10:7. After adding hydrazine hydrate, it was placed in a 90-95 degree water bath for reduction, and taken out after 1 hour. .

将反应后悬浮液用0.22um的滤膜进行过滤,然后用截留分子量为 3000~8000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终得到5nm左右石墨烯量子点;The suspension after the reaction was filtered with a 0.22um membrane, and then dialyzed with a dialysis bag with a molecular weight cut-off of 3000-8000 for a week, and the water was changed twice a day; the suspension after dialysis was dried in a freeze dryer to obtain 5nm Left and right graphene quantum dots;

将0.1wt%~1wt%石墨烯量子点加入到光学硅胶充分中搅拌,即可形成稳定的GQDs/Silicone复合封装基质材料;Add 0.1wt% to 1wt% graphene quantum dots into the optical silica gel and stir well to form a stable GQDs/Silicone composite encapsulation matrix material;

取0.8g的复合基质并加入0.1g荧光粉充分搅拌,脱泡机抽真空除去气泡后,采用自由点胶法涂覆在LED芯片表面,用光电烤箱于150℃加热1h固化。Take 0.8g of the composite matrix and add 0.1g of phosphor powder and stir it thoroughly. After the bubbles are removed by vacuuming with a defoaming machine, it is coated on the surface of the LED chip by a free dispensing method, and cured by heating at 150 °C for 1 h in a photoelectric oven.

实施例14Example 14

称量1g的石墨粉,量取26ml质量分数为98%的浓硫酸,将石墨粉和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1小时;称取 3g的高锰酸钾缓慢分批次加入到混合液中,继续搅拌3小时;移去冰水浴,换成水浴,将水浴温度设置为35度,反应时间为120min;将水浴温度升高至80 度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphite powder, take 26ml of concentrated sulfuric acid with a mass fraction of 98%, mix the graphite powder and concentrated sulfuric acid in a beaker, put the beaker in an ice-water bath, and stir at a speed of 300rpm for 1 hour; weigh 3g of Potassium permanganate was slowly added to the mixed solution in batches, and continued stirring for 3 hours; the ice-water bath was removed, replaced with a water bath, the temperature of the water bath was set to 35 degrees, and the reaction time was 120 min; the temperature of the water bath was raised to 80 degrees, Add 40ml of pure or deionized water dropwise for 30min.

取10ml的浓盐酸按照1:9的比例进行稀释,将反应液用稀释后的稀盐酸进行洗涤、离心,使用去离子水洗涤离心直至溶液PH值接近7,超声处理半小时;然后用截留分子量为8000~14000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终的到氧化石墨烯粉末。Take 10ml of concentrated hydrochloric acid and dilute it at a ratio of 1:9, wash and centrifuge the reaction solution with diluted hydrochloric acid, use deionized water to wash and centrifuge until the pH value of the solution is close to 7, and ultrasonically treat for half an hour; then use molecular weight cut-off Dialyze the dialysis bag of 8000-14000 for one week, and change the water twice a day; dry the dialysis suspension in a freeze dryer, and finally get the graphene oxide powder.

称量1g氧化石墨烯粉末,量取25ml质量分数为98%的浓硫酸,将氧化石墨烯和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1 小时;移去冰水浴,称取1g的高锰酸钾加入到混合液中,室温下继续搅拌2小时;换成水浴,将水浴温度设置为45度,反应时间为120min;将水浴温度升高至90度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphene oxide powder, measure 25ml of concentrated sulfuric acid with a mass fraction of 98%, mix graphene oxide and concentrated sulfuric acid in a beaker, place the beaker in an ice-water bath, and stir for 1 hour at a speed of 300rpm; remove In an ice-water bath, weigh 1 g of potassium permanganate and add it to the mixed solution, and continue stirring at room temperature for 2 hours; change to a water bath, set the temperature of the water bath to 45 degrees, and the reaction time to be 120 minutes; increase the temperature of the water bath to 90 degrees, Add 40ml of pure or deionized water dropwise for 30min.

将反应后的氧化石墨烯量子点溶液配成1mg/ml溶液,氧化石墨烯与水合肼质量配比为10:7,加入水合肼后将其放在90~95度水浴中还原,1h后取出。The reacted graphene oxide quantum dot solution was prepared into a 1 mg/ml solution, and the mass ratio of graphene oxide to hydrazine hydrate was 10:7. After adding hydrazine hydrate, it was placed in a 90-95 degree water bath for reduction, and taken out after 1 hour. .

将反应后悬浮液用0.22um的滤膜进行过滤,然后用截留分子量为 3000~8000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终得到5nm左右石墨烯量子点;The suspension after the reaction was filtered with a 0.22um membrane, and then dialyzed with a dialysis bag with a molecular weight cut-off of 3000-8000 for a week, and the water was changed twice a day; the suspension after dialysis was dried in a freeze dryer to obtain 5nm Left and right graphene quantum dots;

将0.1wt%~1wt%石墨烯量子点加入到光学硅胶充分中搅拌,即可形成稳定的GQDs/Silicone复合封装基质材料;Add 0.1wt% to 1wt% graphene quantum dots into the optical silica gel and stir well to form a stable GQDs/Silicone composite encapsulation matrix material;

取0.8g的复合基质并加入0.1g荧光粉充分搅拌,脱泡机抽真空除去气泡后,采用自由点胶法涂覆在LED芯片表面,用光电烤箱于150℃加热1h固化。Take 0.8g of the composite matrix and add 0.1g of phosphor powder and stir it thoroughly. After the bubbles are removed by vacuuming with a defoaming machine, it is coated on the surface of the LED chip by a free dispensing method, and cured by heating at 150 °C for 1 h in a photoelectric oven.

实施例15Example 15

称量1g的石墨粉,量取26ml质量分数为98%的浓硫酸,将石墨粉和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1小时;称取 4g的高锰酸钾缓慢分批次加入到混合液中,继续搅拌3小时;移去冰水浴,换成水浴,将水浴温度设置为35度,反应时间为60min;将水浴温度升高至80 度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphite powder, take 26ml of concentrated sulfuric acid with a mass fraction of 98%, mix the graphite powder and concentrated sulfuric acid in a beaker, place the beaker in an ice-water bath, and stir at a speed of 300rpm for 1 hour; weigh 4g of Potassium permanganate was slowly added to the mixed solution in batches, and continued stirring for 3 hours; the ice-water bath was removed, replaced with a water bath, the water bath temperature was set to 35 degrees, and the reaction time was 60 min; the water bath temperature was raised to 80 degrees, Add 40ml of pure or deionized water dropwise for 30min.

取10ml的浓盐酸按照1:9的比例进行稀释,将反应液用稀释后的稀盐酸进行洗涤、离心,使用去离子水洗涤离心直至溶液PH值接近7,超声处理半小时;然后用截留分子量为8000~14000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终的到氧化石墨烯粉末。Take 10ml of concentrated hydrochloric acid and dilute it at a ratio of 1:9, wash and centrifuge the reaction solution with diluted hydrochloric acid, use deionized water to wash and centrifuge until the pH value of the solution is close to 7, and ultrasonically treat for half an hour; then use molecular weight cut-off Dialyze the dialysis bag of 8000-14000 for one week, and change the water twice a day; dry the dialysis suspension in a freeze dryer, and finally get the graphene oxide powder.

称量1g氧化石墨烯粉末,量取25ml质量分数为98%的浓硫酸,将氧化石墨烯和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1 小时;移去冰水浴,称取0.6g的高锰酸钾加入到混合液中,室温下继续搅拌2 小时;换成水浴,将水浴温度设置为45度,反应时间为60min;将水浴温度升高至90度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphene oxide powder, measure 25ml of concentrated sulfuric acid with a mass fraction of 98%, mix graphene oxide and concentrated sulfuric acid in a beaker, place the beaker in an ice-water bath, and stir for 1 hour at a speed of 300rpm; remove In an ice-water bath, 0.6 g of potassium permanganate was weighed and added to the mixed solution, and stirring was continued for 2 hours at room temperature; replaced with a water bath, the temperature of the water bath was set to 45 degrees, and the reaction time was 60 min; the temperature of the water bath was raised to 90 degrees , 40ml of pure water or deionized water was added dropwise for 30min.

将反应后的氧化石墨烯量子点溶液配成1mg/ml溶液,氧化石墨烯与水合肼质量配比为10:7,加入水合肼后将其放在90~95度水浴中还原,1h后取出。The reacted graphene oxide quantum dot solution was prepared into a 1 mg/ml solution, and the mass ratio of graphene oxide to hydrazine hydrate was 10:7. After adding hydrazine hydrate, it was placed in a 90-95 degree water bath for reduction, and taken out after 1 hour. .

将反应后悬浮液用0.22um的滤膜进行过滤,然后用截留分子量为 3000~8000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终得到5nm左右石墨烯量子点;The suspension after the reaction was filtered with a 0.22um membrane, and then dialyzed with a dialysis bag with a molecular weight cut-off of 3000-8000 for a week, and the water was changed twice a day; the suspension after dialysis was dried in a freeze dryer to obtain 5nm Left and right graphene quantum dots;

将0.1wt%~1wt%石墨烯量子点加入到光学硅胶充分中搅拌,即可形成稳定的GQDs/Silicone复合封装基质材料;Add 0.1wt% to 1wt% graphene quantum dots into the optical silica gel and stir well to form a stable GQDs/Silicone composite encapsulation matrix material;

取0.8g的复合基质并加入0.1g荧光粉充分搅拌,脱泡机抽真空除去气泡后,采用自由点胶法涂覆在LED芯片表面,用光电烤箱于150℃加热1h固化。Take 0.8g of the composite matrix and add 0.1g of phosphor powder and stir it thoroughly. After the bubbles are removed by vacuuming with a defoaming machine, it is coated on the surface of the LED chip by a free dispensing method, and cured by heating at 150 °C for 1 h in a photoelectric oven.

实施例16Example 16

称量1g的石墨粉,量取26ml质量分数为98%的浓硫酸,将石墨粉和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1小时;称取 4g的高锰酸钾缓慢分批次加入到混合液中,继续搅拌3小时;移去冰水浴,换成水浴,将水浴温度设置为35度,反应时间为90min;将水浴温度升高至80 度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphite powder, take 26ml of concentrated sulfuric acid with a mass fraction of 98%, mix the graphite powder and concentrated sulfuric acid in a beaker, place the beaker in an ice-water bath, and stir at a speed of 300rpm for 1 hour; weigh 4g of Potassium permanganate was slowly added to the mixed solution in batches, and continued stirring for 3 hours; the ice-water bath was removed, replaced with a water bath, the temperature of the water bath was set to 35 degrees, and the reaction time was 90 min; the temperature of the water bath was raised to 80 degrees, Add 40ml of pure or deionized water dropwise for 30min.

取10ml的浓盐酸按照1:9的比例进行稀释,将反应液用稀释后的稀盐酸进行洗涤、离心,使用去离子水洗涤离心直至溶液PH值接近7,超声处理半小时;然后用截留分子量为8000~14000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终的到氧化石墨烯粉末。Take 10ml of concentrated hydrochloric acid and dilute it at a ratio of 1:9, wash and centrifuge the reaction solution with diluted hydrochloric acid, use deionized water to wash and centrifuge until the pH value of the solution is close to 7, and ultrasonically treat for half an hour; then use molecular weight cut-off Dialyze the dialysis bag of 8000-14000 for one week, and change the water twice a day; dry the dialysis suspension in a freeze dryer, and finally get the graphene oxide powder.

称量1g氧化石墨烯粉末,量取25ml质量分数为98%的浓硫酸,将氧化石墨烯和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1 小时;移去冰水浴,称取0.6g的高锰酸钾加入到混合液中,室温下继续搅拌2 小时;换成水浴,将水浴温度设置为45度,反应时间为60min;将水浴温度升高至90度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphene oxide powder, measure 25ml of concentrated sulfuric acid with a mass fraction of 98%, mix graphene oxide and concentrated sulfuric acid in a beaker, place the beaker in an ice-water bath, and stir for 1 hour at a speed of 300rpm; remove In an ice-water bath, 0.6 g of potassium permanganate was weighed and added to the mixed solution, and stirring was continued for 2 hours at room temperature; replaced with a water bath, the temperature of the water bath was set to 45 degrees, and the reaction time was 60 min; the temperature of the water bath was raised to 90 degrees , 40ml of pure water or deionized water was added dropwise for 30min.

将反应后的氧化石墨烯量子点溶液配成1mg/ml溶液,氧化石墨烯与水合肼质量配比为10:7,加入水合肼后将其放在90~95度水浴中还原,1h后取出。The reacted graphene oxide quantum dot solution was prepared into a 1 mg/ml solution, and the mass ratio of graphene oxide to hydrazine hydrate was 10:7. After adding hydrazine hydrate, it was placed in a 90-95 degree water bath for reduction, and taken out after 1 hour. .

将反应后悬浮液用0.22um的滤膜进行过滤,然后用截留分子量为 3000~8000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终得到5nm左右石墨烯量子点;The suspension after the reaction was filtered with a 0.22um membrane, and then dialyzed with a dialysis bag with a molecular weight cut-off of 3000-8000 for a week, and the water was changed twice a day; the suspension after dialysis was dried in a freeze dryer to obtain 5nm Left and right graphene quantum dots;

将0.1wt%~1wt%石墨烯量子点加入到光学硅胶充分中搅拌,即可形成稳定的GQDs/Silicone复合封装基质材料;Add 0.1wt% to 1wt% graphene quantum dots into the optical silica gel and stir well to form a stable GQDs/Silicone composite encapsulation matrix material;

取0.8g的复合基质并加入0.1g荧光粉充分搅拌,脱泡机抽真空除去气泡后,采用自由点胶法涂覆在LED芯片表面,用光电烤箱于150℃加热1h固化。Take 0.8g of the composite matrix and add 0.1g of phosphor powder and stir it thoroughly. After the bubbles are removed by vacuuming with a defoaming machine, it is coated on the surface of the LED chip by a free dispensing method, and cured by heating at 150 °C for 1 h in a photoelectric oven.

实施例17Example 17

称量1g的石墨粉,量取26ml质量分数为98%的浓硫酸,将石墨粉和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1小时;称取 4g的高锰酸钾缓慢分批次加入到混合液中,继续搅拌3小时;移去冰水浴,换成水浴,将水浴温度设置为35度,反应时间为120min;将水浴温度升高至80 度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphite powder, take 26ml of concentrated sulfuric acid with a mass fraction of 98%, mix the graphite powder and concentrated sulfuric acid in a beaker, place the beaker in an ice-water bath, and stir at a speed of 300rpm for 1 hour; weigh 4g of Potassium permanganate was slowly added to the mixed solution in batches, and continued stirring for 3 hours; the ice-water bath was removed, replaced with a water bath, the temperature of the water bath was set to 35 degrees, and the reaction time was 120 min; the temperature of the water bath was raised to 80 degrees, Add 40ml of pure or deionized water dropwise for 30min.

取10ml的浓盐酸按照1:9的比例进行稀释,将反应液用稀释后的稀盐酸进行洗涤、离心,使用去离子水洗涤离心直至溶液PH值接近7,超声处理半小时;然后用截留分子量为8000~14000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终的到氧化石墨烯粉末。Take 10ml of concentrated hydrochloric acid and dilute it at a ratio of 1:9, wash and centrifuge the reaction solution with diluted hydrochloric acid, use deionized water to wash and centrifuge until the pH value of the solution is close to 7, and ultrasonically treat for half an hour; then use molecular weight cut-off Dialyze the dialysis bag of 8000-14000 for one week, and change the water twice a day; dry the dialysis suspension in a freeze dryer, and finally get the graphene oxide powder.

称量1g氧化石墨烯粉末,量取25ml质量分数为98%的浓硫酸,将氧化石墨烯和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1 小时;移去冰水浴,称取0.6g的高锰酸钾加入到混合液中,室温下继续搅拌2 小时;换成水浴,将水浴温度设置为45度,反应时间为60min;将水浴温度升高至90度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphene oxide powder, measure 25ml of concentrated sulfuric acid with a mass fraction of 98%, mix graphene oxide and concentrated sulfuric acid in a beaker, place the beaker in an ice-water bath, and stir for 1 hour at a speed of 300rpm; remove In an ice-water bath, 0.6 g of potassium permanganate was weighed and added to the mixed solution, and stirring was continued for 2 hours at room temperature; replaced with a water bath, the temperature of the water bath was set to 45 degrees, and the reaction time was 60 min; the temperature of the water bath was raised to 90 degrees , 40ml of pure water or deionized water was added dropwise for 30min.

将反应后的氧化石墨烯量子点溶液配成1mg/ml溶液,氧化石墨烯与水合肼质量配比为10:7,加入水合肼后将其放在90~95度水浴中还原,1h后取出。The reacted graphene oxide quantum dot solution was prepared into a 1 mg/ml solution, and the mass ratio of graphene oxide to hydrazine hydrate was 10:7. After adding hydrazine hydrate, it was placed in a 90-95 degree water bath for reduction, and taken out after 1 hour. .

将反应后悬浮液用0.22um的滤膜进行过滤,然后用截留分子量为 3000~8000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终得到5nm左右石墨烯量子点;The suspension after the reaction was filtered with a 0.22um membrane, and then dialyzed with a dialysis bag with a molecular weight cut-off of 3000-8000 for a week, and the water was changed twice a day; the suspension after dialysis was dried in a freeze dryer to obtain 5nm Left and right graphene quantum dots;

将0.1wt%~1wt%石墨烯量子点加入到光学硅胶充分中搅拌,即可形成稳定的GQDs/Silicone复合封装基质材料;Add 0.1wt% to 1wt% graphene quantum dots into the optical silica gel and stir well to form a stable GQDs/Silicone composite encapsulation matrix material;

取0.8g的复合基质并加入0.1g荧光粉充分搅拌,脱泡机抽真空除去气泡后,采用自由点胶法涂覆在LED芯片表面,用光电烤箱于150℃加热1h固化。Take 0.8g of the composite matrix and add 0.1g of phosphor powder and stir it thoroughly. After the bubbles are removed by vacuuming with a defoaming machine, it is coated on the surface of the LED chip by a free dispensing method, and cured by heating at 150 °C for 1 h in a photoelectric oven.

实施例18Example 18

称量1g的石墨粉,量取30ml质量分数为98%的浓硫酸,将石墨粉和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1小时;称取 4g的高锰酸钾缓慢分批次加入到混合液中,继续搅拌3小时;移去冰水浴,换成水浴,将水浴温度设置为35度,反应时间为60min;将水浴温度升高至80 度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphite powder, take 30ml of concentrated sulfuric acid with a mass fraction of 98%, mix the graphite powder and concentrated sulfuric acid in a beaker, put the beaker in an ice-water bath, and stir at a speed of 300rpm for 1 hour; weigh 4g of Potassium permanganate was slowly added to the mixed solution in batches, and continued stirring for 3 hours; the ice-water bath was removed, replaced with a water bath, the water bath temperature was set to 35 degrees, and the reaction time was 60 min; the water bath temperature was raised to 80 degrees, Add 40ml of pure or deionized water dropwise for 30min.

取10ml的浓盐酸按照1:9的比例进行稀释,将反应液用稀释后的稀盐酸进行洗涤、离心,使用去离子水洗涤离心直至溶液PH值接近7,超声处理半小时;然后用截留分子量为8000~14000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终的到氧化石墨烯粉末。Take 10ml of concentrated hydrochloric acid and dilute it at a ratio of 1:9, wash and centrifuge the reaction solution with diluted hydrochloric acid, use deionized water to wash and centrifuge until the pH value of the solution is close to 7, and ultrasonically treat for half an hour; then use molecular weight cut-off Dialyze the dialysis bag of 8000-14000 for one week, and change the water twice a day; dry the dialysis suspension in a freeze dryer, and finally get the graphene oxide powder.

称量1g氧化石墨烯粉末,量取25ml质量分数为98%的浓硫酸,将氧化石墨烯和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1 小时;移去冰水浴,称取0.8g的高锰酸钾加入到混合液中,室温下继续搅拌2 小时;换成水浴,将水浴温度设置为45度,反应时间为90min;将水浴温度升高至90度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphene oxide powder, measure 25ml of concentrated sulfuric acid with a mass fraction of 98%, mix graphene oxide and concentrated sulfuric acid in a beaker, place the beaker in an ice-water bath, and stir for 1 hour at a speed of 300rpm; remove In an ice-water bath, 0.8 g of potassium permanganate was weighed and added to the mixed solution, and stirring was continued for 2 hours at room temperature; replaced by a water bath, the temperature of the water bath was set to 45 degrees, and the reaction time was 90 min; the temperature of the water bath was raised to 90 degrees , 40ml of pure water or deionized water was added dropwise for 30min.

将反应后悬浮液用0.22um的滤膜进行过滤,然后用截留分子量为 3000~8000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终得到6nm左右石墨烯量子点;The suspension after the reaction was filtered with a 0.22um filter membrane, and then dialyzed with a dialysis bag with a molecular weight cut-off of 3000-8000 for a week, and the water was changed twice a day; the dialysis suspension was dried in a freeze dryer, and finally 6nm was obtained. Left and right graphene quantum dots;

将反应后的氧化石墨烯量子点溶液配成1mg/ml溶液,氧化石墨烯与水合肼质量配比为10:7,加入水合肼后将其放在90~95度水浴中还原,1h后取出。The reacted graphene oxide quantum dot solution was prepared into a 1 mg/ml solution, and the mass ratio of graphene oxide to hydrazine hydrate was 10:7. After adding hydrazine hydrate, it was placed in a 90-95 degree water bath for reduction, and taken out after 1 hour. .

将0.1wt%~1wt%石墨烯量子点加入到光学硅胶充分中搅拌,即可形成稳定的GQDs/Silicone复合封装基质材料;Add 0.1wt% to 1wt% graphene quantum dots into the optical silica gel and stir well to form a stable GQDs/Silicone composite encapsulation matrix material;

取0.8g的复合基质并加入0.1g荧光粉充分搅拌,脱泡机抽真空除去气泡后,采用自由点胶法涂覆在LED芯片表面,用光电烤箱于150℃加热1h固化。Take 0.8g of the composite matrix and add 0.1g of phosphor powder and stir it thoroughly. After the bubbles are removed by vacuuming with a defoaming machine, it is coated on the surface of the LED chip by a free dispensing method, and cured by heating at 150 °C for 1 h in a photoelectric oven.

实施例19Example 19

称量1g的石墨粉,量取30ml质量分数为98%的浓硫酸,将石墨粉和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1小时;称取 4g的高锰酸钾缓慢分批次加入到混合液中,继续搅拌3小时;移去冰水浴,换成水浴,将水浴温度设置为35度,反应时间为60min;将水浴温度升高至80 度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphite powder, take 30ml of concentrated sulfuric acid with a mass fraction of 98%, mix the graphite powder and concentrated sulfuric acid in a beaker, put the beaker in an ice-water bath, and stir at a speed of 300rpm for 1 hour; weigh 4g of Potassium permanganate was slowly added to the mixed solution in batches, and continued stirring for 3 hours; the ice-water bath was removed, replaced with a water bath, the water bath temperature was set to 35 degrees, and the reaction time was 60 min; the water bath temperature was raised to 80 degrees, Add 40ml of pure or deionized water dropwise for 30min.

取10ml的浓盐酸按照1:9的比例进行稀释,将反应液用稀释后的稀盐酸进行洗涤、离心,使用去离子水洗涤离心直至溶液PH值接近7,超声处理半小时;然后用截留分子量为8000~14000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终的到氧化石墨烯粉末。Take 10ml of concentrated hydrochloric acid and dilute it at a ratio of 1:9, wash and centrifuge the reaction solution with diluted hydrochloric acid, use deionized water to wash and centrifuge until the pH value of the solution is close to 7, and ultrasonically treat for half an hour; then use molecular weight cut-off Dialyze the dialysis bag of 8000-14000 for one week, and change the water twice a day; dry the dialysis suspension in a freeze dryer, and finally get the graphene oxide powder.

称量1g氧化石墨烯粉末,量取25ml质量分数为98%的浓硫酸,将氧化石墨烯和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1 小时;移去冰水浴,称取0.8g的高锰酸钾加入到混合液中,室温下继续搅拌2 小时;换成水浴,将水浴温度设置为45度,反应时间为120min;将水浴温度升高至90度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphene oxide powder, measure 25ml of concentrated sulfuric acid with a mass fraction of 98%, mix graphene oxide and concentrated sulfuric acid in a beaker, place the beaker in an ice-water bath, and stir for 1 hour at a speed of 300rpm; remove In an ice-water bath, 0.8 g of potassium permanganate was weighed and added to the mixed solution, and stirring was continued for 2 hours at room temperature; replaced with a water bath, the temperature of the water bath was set to 45 degrees, and the reaction time was 120 min; the temperature of the water bath was raised to 90 degrees , 40ml of pure water or deionized water was added dropwise for 30min.

将反应后的氧化石墨烯量子点溶液配成1mg/ml溶液,氧化石墨烯与水合肼质量配比为10:7,加入水合肼后将其放在90~95度水浴中还原,1h后取出。The reacted graphene oxide quantum dot solution was prepared into a 1 mg/ml solution, and the mass ratio of graphene oxide to hydrazine hydrate was 10:7. After adding hydrazine hydrate, it was placed in a 90-95 degree water bath for reduction, and taken out after 1 hour. .

将反应后悬浮液用0.22um的滤膜进行过滤,然后用截留分子量为 3000~8000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终得到4nm左右石墨烯量子点;The suspension after the reaction was filtered with a 0.22um filter membrane, and then dialyzed with a dialysis bag with a molecular weight cut-off of 3000-8000 for a week, and the water was changed twice a day; the dialysis suspension was dried in a freeze dryer to obtain a final 4nm Left and right graphene quantum dots;

将0.1wt%~1wt%石墨烯量子点加入到光学硅胶充分中搅拌,即可形成稳定的GQDs/Silicone复合封装基质材料;Add 0.1wt% to 1wt% graphene quantum dots into the optical silica gel and stir well to form a stable GQDs/Silicone composite encapsulation matrix material;

取0.8g的复合基质并加入0.1g荧光粉充分搅拌,脱泡机抽真空除去气泡后,采用自由点胶法涂覆在LED芯片表面,用光电烤箱于150℃加热1h固化。Take 0.8g of the composite matrix and add 0.1g of phosphor powder and stir it thoroughly. After the bubbles are removed by vacuuming with a defoaming machine, it is coated on the surface of the LED chip by a free dispensing method, and cured by heating at 150 °C for 1 h in a photoelectric oven.

实施例20Example 20

称量1g的石墨粉,量取30ml质量分数为98%的浓硫酸,将石墨粉和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1小时;称取 5g的高锰酸钾缓慢分批次加入到混合液中,继续搅拌3小时;移去冰水浴,换成水浴,将水浴温度设置为35度,反应时间为60min;将水浴温度升高至80 度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphite powder, take 30ml of concentrated sulfuric acid with a mass fraction of 98%, mix the graphite powder and concentrated sulfuric acid in a beaker, put the beaker in an ice-water bath, and stir at a speed of 300rpm for 1 hour; weigh 5g of Potassium permanganate was slowly added to the mixed solution in batches, and continued stirring for 3 hours; the ice-water bath was removed, replaced with a water bath, the water bath temperature was set to 35 degrees, and the reaction time was 60 min; the water bath temperature was raised to 80 degrees, Add 40ml of pure or deionized water dropwise for 30min.

取10ml的浓盐酸按照1:9的比例进行稀释,将反应液用稀释后的稀盐酸进行洗涤、离心,使用去离子水洗涤离心直至溶液PH值接近7,超声处理半小时;然后用截留分子量为8000~14000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终的到氧化石墨烯粉末。Take 10ml of concentrated hydrochloric acid and dilute it at a ratio of 1:9, wash and centrifuge the reaction solution with diluted hydrochloric acid, use deionized water to wash and centrifuge until the pH value of the solution is close to 7, and ultrasonically treat for half an hour; then use molecular weight cut-off Dialyze the dialysis bag of 8000-14000 for one week, and change the water twice a day; dry the dialysis suspension in a freeze dryer, and finally get the graphene oxide powder.

称量1g氧化石墨烯粉末,量取25ml质量分数为98%的浓硫酸,将氧化石墨烯和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1 小时;移去冰水浴,称取0.6g的高锰酸钾加入到混合液中,室温下继续搅拌2 小时;换成水浴,将水浴温度设置为45度,反应时间为60min;将水浴温度升高至90度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphene oxide powder, measure 25ml of concentrated sulfuric acid with a mass fraction of 98%, mix graphene oxide and concentrated sulfuric acid in a beaker, place the beaker in an ice-water bath, and stir for 1 hour at a speed of 300rpm; remove In an ice-water bath, 0.6 g of potassium permanganate was weighed and added to the mixed solution, and stirring was continued for 2 hours at room temperature; replaced with a water bath, the temperature of the water bath was set to 45 degrees, and the reaction time was 60 min; the temperature of the water bath was raised to 90 degrees , 40ml of pure water or deionized water was added dropwise for 30min.

将反应后的氧化石墨烯量子点溶液配成1mg/ml溶液,氧化石墨烯与水合肼质量配比为10:7,加入水合肼后将其放在90~95度水浴中还原,1h后取出。The reacted graphene oxide quantum dot solution was prepared into a 1 mg/ml solution, and the mass ratio of graphene oxide to hydrazine hydrate was 10:7. After adding hydrazine hydrate, it was placed in a 90-95 degree water bath for reduction, and taken out after 1 hour. .

将反应后悬浮液用0.22um的滤膜进行过滤,然后用截留分子量为 3000~8000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终得到4nm左右石墨烯量子点;The suspension after the reaction was filtered with a 0.22um filter membrane, and then dialyzed with a dialysis bag with a molecular weight cut-off of 3000-8000 for a week, and the water was changed twice a day; the dialysis suspension was dried in a freeze dryer to obtain a final 4nm Left and right graphene quantum dots;

将0.1wt%~1wt%石墨烯量子点加入到光学硅胶充分中搅拌,即可形成稳定的GQDs/Silicone复合封装基质材料;Add 0.1wt% to 1wt% graphene quantum dots into the optical silica gel and stir well to form a stable GQDs/Silicone composite encapsulation matrix material;

取0.8g的复合基质并加入0.1g荧光粉充分搅拌,脱泡机抽真空除去气泡后,采用自由点胶法涂覆在LED芯片表面,用光电烤箱于150℃加热1h固化。Take 0.8g of the composite matrix and add 0.1g of phosphor powder and stir it thoroughly. After the bubbles are removed by vacuuming with a defoaming machine, it is coated on the surface of the LED chip by a free dispensing method, and cured by heating at 150 °C for 1 h in a photoelectric oven.

实施例21Example 21

称量1g的石墨粉,量取30ml质量分数为98%的浓硫酸,将石墨粉和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1小时;称取5g的高锰酸钾缓慢分批次加入到混合液中,继续搅拌3小时;移去冰水浴,换成水浴,将水浴温度设置为35度,反应时间为120min;将水浴温度升高至80 度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphite powder, take 30ml of concentrated sulfuric acid with a mass fraction of 98%, mix the graphite powder and concentrated sulfuric acid in a beaker, put the beaker in an ice-water bath, and stir at a speed of 300rpm for 1 hour; weigh 5g of Potassium permanganate was slowly added to the mixed solution in batches, and continued stirring for 3 hours; the ice-water bath was removed, replaced with a water bath, the temperature of the water bath was set to 35 degrees, and the reaction time was 120 min; the temperature of the water bath was raised to 80 degrees, Add 40ml of pure or deionized water dropwise for 30min.

取10ml的浓盐酸按照1:9的比例进行稀释,将反应液用稀释后的稀盐酸进行洗涤、离心,使用去离子水洗涤离心直至溶液PH值接近7,超声处理半小时;然后用截留分子量为8000~14000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终的到氧化石墨烯粉末。Take 10ml of concentrated hydrochloric acid and dilute it at a ratio of 1:9, wash and centrifuge the reaction solution with diluted hydrochloric acid, use deionized water to wash and centrifuge until the pH value of the solution is close to 7, and ultrasonically treat for half an hour; then use molecular weight cut-off Dialyze the dialysis bag of 8000-14000 for one week, and change the water twice a day; dry the dialysis suspension in a freeze dryer, and finally get the graphene oxide powder.

称量1g氧化石墨烯粉末,量取25ml质量分数为98%的浓硫酸,将氧化石墨烯和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1 小时;移去冰水浴,称取0.6g的高锰酸钾加入到混合液中,室温下继续搅拌2 小时;换成水浴,将水浴温度设置为45度,反应时间为60min;将水浴温度升高至90度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphene oxide powder, measure 25ml of concentrated sulfuric acid with a mass fraction of 98%, mix graphene oxide and concentrated sulfuric acid in a beaker, place the beaker in an ice-water bath, and stir for 1 hour at a speed of 300rpm; remove In an ice-water bath, 0.6 g of potassium permanganate was weighed and added to the mixed solution, and stirring was continued for 2 hours at room temperature; replaced with a water bath, the temperature of the water bath was set to 45 degrees, and the reaction time was 60 min; the temperature of the water bath was raised to 90 degrees , 40ml of pure water or deionized water was added dropwise for 30min.

将反应后的氧化石墨烯量子点溶液配成1mg/ml溶液,氧化石墨烯与水合肼质量配比为10:7,加入水合肼后将其放在90~95度水浴中还原,1h后取出。The reacted graphene oxide quantum dot solution was prepared into a 1 mg/ml solution, and the mass ratio of graphene oxide to hydrazine hydrate was 10:7. After adding hydrazine hydrate, it was placed in a 90-95 degree water bath for reduction, and taken out after 1 hour. .

将反应后悬浮液用0.22um的滤膜进行过滤,然后用截留分子量为 3000~8000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终得到4nm左右石墨烯量子点;The suspension after the reaction was filtered with a 0.22um filter membrane, and then dialyzed with a dialysis bag with a molecular weight cut-off of 3000-8000 for a week, and the water was changed twice a day; the dialysis suspension was dried in a freeze dryer to obtain a final 4nm Left and right graphene quantum dots;

将0.1wt%~1wt%石墨烯量子点加入到光学硅胶充分中搅拌,即可形成稳定的GQDs/Silicone复合封装基质材料;Add 0.1wt% to 1wt% graphene quantum dots into the optical silica gel and stir well to form a stable GQDs/Silicone composite encapsulation matrix material;

取0.8g的复合基质并加入0.1g荧光粉充分搅拌,脱泡机抽真空除去气泡后,采用自由点胶法涂覆在LED芯片表面,用光电烤箱于150℃加热1h固化。Take 0.8g of the composite matrix and add 0.1g of phosphor powder and stir it thoroughly. After the bubbles are removed by vacuuming with a defoaming machine, it is coated on the surface of the LED chip by a free dispensing method, and cured by heating at 150 °C for 1 h in a photoelectric oven.

实施例22Example 22

称量1g的石墨粉,量取30ml质量分数为98%的浓硫酸,将石墨粉和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1小时;称取 5g的高锰酸钾缓慢分批次加入到混合液中,继续搅拌3小时;移去冰水浴,换成水浴,将水浴温度设置为35度,反应时间为90min;将水浴温度升高至80 度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphite powder, take 30ml of concentrated sulfuric acid with a mass fraction of 98%, mix the graphite powder and concentrated sulfuric acid in a beaker, put the beaker in an ice-water bath, and stir at a speed of 300rpm for 1 hour; weigh 5g of Potassium permanganate was slowly added to the mixed solution in batches, and continued stirring for 3 hours; the ice-water bath was removed, replaced with a water bath, the temperature of the water bath was set to 35 degrees, and the reaction time was 90 min; the temperature of the water bath was raised to 80 degrees, Add 40ml of pure or deionized water dropwise for 30min.

取10ml的浓盐酸按照1:9的比例进行稀释,将反应液用稀释后的稀盐酸进行洗涤、离心,使用去离子水洗涤离心直至溶液PH值接近7,超声处理半小时;然后用截留分子量为8000~14000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终的到氧化石墨烯粉末。Take 10ml of concentrated hydrochloric acid and dilute it at a ratio of 1:9, wash and centrifuge the reaction solution with diluted hydrochloric acid, use deionized water to wash and centrifuge until the pH value of the solution is close to 7, and ultrasonically treat for half an hour; then use molecular weight cut-off Dialyze the dialysis bag of 8000-14000 for one week, and change the water twice a day; dry the dialysis suspension in a freeze dryer, and finally get the graphene oxide powder.

称量1g氧化石墨烯粉末,量取25ml质量分数为98%的浓硫酸,将氧化石墨烯和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1 小时;移去冰水浴,称取0.8g的高锰酸钾加入到混合液中,室温下继续搅拌2 小时;换成水浴,将水浴温度设置为45度,反应时间为90min;将水浴温度升高至90度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphene oxide powder, measure 25ml of concentrated sulfuric acid with a mass fraction of 98%, mix graphene oxide and concentrated sulfuric acid in a beaker, place the beaker in an ice-water bath, and stir for 1 hour at a speed of 300rpm; remove In an ice-water bath, 0.8 g of potassium permanganate was weighed and added to the mixed solution, and stirring was continued for 2 hours at room temperature; replaced by a water bath, the temperature of the water bath was set to 45 degrees, and the reaction time was 90 min; the temperature of the water bath was raised to 90 degrees , 40ml of pure water or deionized water was added dropwise for 30min.

将反应后的氧化石墨烯量子点溶液配成1mg/ml溶液,氧化石墨烯与水合肼质量配比为10:7,加入水合肼后将其放在90~95度水浴中还原,1h后取出。The reacted graphene oxide quantum dot solution was prepared into a 1 mg/ml solution, and the mass ratio of graphene oxide to hydrazine hydrate was 10:7. After adding hydrazine hydrate, it was placed in a 90-95 degree water bath for reduction, and taken out after 1 hour. .

将反应后悬浮液用0.22um的滤膜进行过滤,然后用截留分子量为 3000~8000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终得到3nm左右石墨烯量子点;The suspension after the reaction was filtered with a 0.22um filter membrane, and then dialyzed with a dialysis bag with a molecular weight cut-off of 3000-8000 for one week, and the water was changed twice a day; the suspension after dialysis was dried in a freeze dryer, and finally 3nm was obtained. Left and right graphene quantum dots;

将0.1wt%~1wt%石墨烯量子点加入到光学硅胶充分中搅拌,即可形成稳定的GQDs/Silicone复合封装基质材料;Add 0.1wt% to 1wt% graphene quantum dots into the optical silica gel and stir well to form a stable GQDs/Silicone composite encapsulation matrix material;

取0.8g的复合基质并加入0.1g荧光粉充分搅拌,脱泡机抽真空除去气泡后,采用自由点胶法涂覆在LED芯片表面,用光电烤箱于150℃加热1h固化。Take 0.8g of the composite matrix and add 0.1g of phosphor powder and stir it thoroughly. After the bubbles are removed by vacuuming with a defoaming machine, it is coated on the surface of the LED chip by a free dispensing method, and cured by heating at 150 °C for 1 h in a photoelectric oven.

实施例23Example 23

称量1g的石墨粉,量取26ml质量分数为98%的浓硫酸,将石墨粉和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1小时;称取 4g的高锰酸钾缓慢分批次加入到混合液中,继续搅拌3小时;移去冰水浴,换成水浴,将水浴温度设置为35度,反应时间为120min;将水浴温度升高至80 度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphite powder, take 26ml of concentrated sulfuric acid with a mass fraction of 98%, mix the graphite powder and concentrated sulfuric acid in a beaker, place the beaker in an ice-water bath, and stir at a speed of 300rpm for 1 hour; weigh 4g of Potassium permanganate was slowly added to the mixed solution in batches, and continued stirring for 3 hours; the ice-water bath was removed, replaced with a water bath, the temperature of the water bath was set to 35 degrees, and the reaction time was 120 min; the temperature of the water bath was raised to 80 degrees, Add 40ml of pure or deionized water dropwise for 30min.

取10ml的浓盐酸按照1:9的比例进行稀释,将反应液用稀释后的稀盐酸进行洗涤、离心,使用去离子水洗涤离心直至溶液PH值接近7,超声处理半小时;然后用截留分子量为8000~14000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终的到氧化石墨烯粉末。Take 10ml of concentrated hydrochloric acid and dilute it at a ratio of 1:9, wash and centrifuge the reaction solution with diluted hydrochloric acid, use deionized water to wash and centrifuge until the pH value of the solution is close to 7, and ultrasonically treat for half an hour; then use molecular weight cut-off Dialyze the dialysis bag of 8000-14000 for one week, and change the water twice a day; dry the dialysis suspension in a freeze dryer, and finally get the graphene oxide powder.

称量1g氧化石墨烯粉末,量取25ml质量分数为98%的浓硫酸,将氧化石墨烯和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1 小时;移去冰水浴,称取0.6g的高锰酸钾加入到混合液中,室温下继续搅拌2 小时;换成水浴,将水浴温度设置为45度,反应时间为120min;将水浴温度升高至90度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphene oxide powder, measure 25ml of concentrated sulfuric acid with a mass fraction of 98%, mix graphene oxide and concentrated sulfuric acid in a beaker, place the beaker in an ice-water bath, and stir for 1 hour at a speed of 300rpm; remove Ice water bath, take 0.6g of potassium permanganate and add it to the mixed solution, continue stirring for 2 hours at room temperature; change to a water bath, set the water bath temperature to 45 degrees, and the reaction time is 120min; the water bath temperature is raised to 90 degrees , 40ml of pure water or deionized water was added dropwise for 30min.

将反应后的氧化石墨烯量子点溶液配成1mg/ml溶液,氧化石墨烯与水合肼质量配比为10:7,加入水合肼后将其放在90~95度水浴中还原,1h后取出。The reacted graphene oxide quantum dot solution was prepared into a 1 mg/ml solution, and the mass ratio of graphene oxide to hydrazine hydrate was 10:7. After adding hydrazine hydrate, it was placed in a 90-95 degree water bath for reduction, and taken out after 1 hour. .

将反应后悬浮液用0.22um的滤膜进行过滤,然后用截留分子量为 3000~8000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终得到5nm左右石墨烯量子点;The suspension after the reaction was filtered with a 0.22um membrane, and then dialyzed with a dialysis bag with a molecular weight cut-off of 3000-8000 for a week, and the water was changed twice a day; the suspension after dialysis was dried in a freeze dryer to obtain 5nm Left and right graphene quantum dots;

将0.1wt%~1wt%石墨烯量子点加入到光学硅胶充分中搅拌,即可形成稳定的GQDs/Silicone复合封装基质材料;Add 0.1wt% to 1wt% graphene quantum dots into the optical silica gel and stir well to form a stable GQDs/Silicone composite encapsulation matrix material;

取0.8g的复合基质并加入0.1g荧光粉充分搅拌,脱泡机抽真空除去气泡后,采用自由点胶法涂覆在LED芯片表面,用光电烤箱于150℃加热1h固化。Take 0.8g of the composite matrix and add 0.1g of phosphor powder and stir it thoroughly. After the bubbles are removed by vacuuming with a defoaming machine, it is coated on the surface of the LED chip by a free dispensing method, and cured by heating at 150 °C for 1 h in a photoelectric oven.

实施例24Example 24

称量1g的石墨粉,量取23ml质量分数为98%的浓硫酸,将石墨粉和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1小时;称取 3g的高锰酸钾缓慢分批次加入到混合液中,继续搅拌3小时;移去冰水浴,换成水浴,将水浴温度设置为35度,反应时间为30min;将水浴温度升高至80 度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphite powder, take 23ml of concentrated sulfuric acid with a mass fraction of 98%, mix the graphite powder and concentrated sulfuric acid in a beaker, put the beaker in an ice-water bath, and stir at a speed of 300rpm for 1 hour; weigh 3g of Potassium permanganate was slowly added to the mixed solution in batches, and stirring was continued for 3 hours; the ice-water bath was removed, replaced with a water bath, the temperature of the water bath was set to 35 degrees, and the reaction time was 30 min; the temperature of the water bath was raised to 80 degrees, Add 40ml of pure or deionized water dropwise for 30min.

取10ml的浓盐酸按照1:9的比例进行稀释,将反应液用稀释后的稀盐酸进行洗涤、离心,使用去离子水洗涤离心直至溶液PH值接近7,超声处理半小时;然后用截留分子量为8000~14000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终的到氧化石墨烯粉末。Take 10ml of concentrated hydrochloric acid and dilute it at a ratio of 1:9, wash and centrifuge the reaction solution with diluted hydrochloric acid, use deionized water to wash and centrifuge until the pH value of the solution is close to 7, and ultrasonically treat for half an hour; then use molecular weight cut-off Dialyze the dialysis bag of 8000-14000 for one week, and change the water twice a day; dry the dialysis suspension in a freeze dryer, and finally get the graphene oxide powder.

称量1g氧化石墨烯粉末,量取25ml质量分数为98%的浓硫酸,将氧化石墨烯和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1 小时;移去冰水浴,称取0.6g的高锰酸钾加入到混合液中,室温下继续搅拌2 小时;换成水浴,将水浴温度设置为45度,反应时间为60min;将水浴温度升高至90度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphene oxide powder, measure 25ml of concentrated sulfuric acid with a mass fraction of 98%, mix graphene oxide and concentrated sulfuric acid in a beaker, place the beaker in an ice-water bath, and stir for 1 hour at a speed of 300rpm; remove In an ice-water bath, 0.6 g of potassium permanganate was weighed and added to the mixed solution, and stirring was continued for 2 hours at room temperature; replaced with a water bath, the temperature of the water bath was set to 45 degrees, and the reaction time was 60 min; the temperature of the water bath was raised to 90 degrees , 40ml of pure water or deionized water was added dropwise for 30min.

将反应后的氧化石墨烯量子点溶液配成1mg/ml溶液,氧化石墨烯与水合肼质量配比为10:7,加入水合肼后将其放在90~95度水浴中还原,1h后取出。The reacted graphene oxide quantum dot solution was prepared into a 1 mg/ml solution, and the mass ratio of graphene oxide to hydrazine hydrate was 10:7. After adding hydrazine hydrate, it was placed in a 90-95 degree water bath for reduction, and taken out after 1 hour. .

将反应后悬浮液用0.22um的滤膜进行过滤,然后用截留分子量为 3000~8000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终得到6nm左右石墨烯量子点;The suspension after the reaction was filtered with a 0.22um filter membrane, and then dialyzed with a dialysis bag with a molecular weight cut-off of 3000-8000 for a week, and the water was changed twice a day; the dialysis suspension was dried in a freeze dryer, and finally 6nm was obtained. Left and right graphene quantum dots;

将0.1wt%~1wt%石墨烯量子点加入到环氧树脂中充分搅拌,即可形成稳定的石墨烯/环氧树脂复合封装基质材料;Add 0.1wt% to 1wt% graphene quantum dots into epoxy resin and fully stir to form a stable graphene/epoxy resin composite encapsulation matrix material;

取0.8g的复合基质并加入0.1g荧光粉充分搅拌,脱泡机抽真空除去气泡后,采用自由点胶法涂覆在LED芯片表面,用光电烤箱于150℃加热1h固化。Take 0.8g of the composite matrix and add 0.1g of phosphor powder and stir it thoroughly. After the bubbles are removed by vacuuming with a defoaming machine, it is coated on the surface of the LED chip by a free dispensing method, and cured by heating at 150 °C for 1 h in a photoelectric oven.

实施例25Example 25

称量1g的石墨粉,量取23ml质量分数为98%的浓硫酸,将石墨粉和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1小时;称取 3g的高锰酸钾缓慢分批次加入到混合液中,继续搅拌3小时;移去冰水浴,换成水浴,将水浴温度设置为35度,反应时间为30min;将水浴温度升高至80 度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphite powder, take 23ml of concentrated sulfuric acid with a mass fraction of 98%, mix the graphite powder and concentrated sulfuric acid in a beaker, put the beaker in an ice-water bath, and stir at a speed of 300rpm for 1 hour; weigh 3g of Potassium permanganate was slowly added to the mixed solution in batches, and stirring was continued for 3 hours; the ice-water bath was removed, replaced with a water bath, the temperature of the water bath was set to 35 degrees, and the reaction time was 30 min; the temperature of the water bath was raised to 80 degrees, Add 40ml of pure or deionized water dropwise for 30min.

取10ml的浓盐酸按照1:9的比例进行稀释,将反应液用稀释后的稀盐酸进行洗涤、离心,使用去离子水洗涤离心直至溶液PH值接近7,超声处理半小时;然后用截留分子量为8000~14000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终的到氧化石墨烯粉末。Take 10ml of concentrated hydrochloric acid and dilute it at a ratio of 1:9, wash and centrifuge the reaction solution with diluted hydrochloric acid, use deionized water to wash and centrifuge until the pH value of the solution is close to 7, and ultrasonically treat for half an hour; then use molecular weight cut-off Dialyze the dialysis bag of 8000-14000 for one week, and change the water twice a day; dry the dialysis suspension in a freeze dryer, and finally get the graphene oxide powder.

称量1g氧化石墨烯粉末,量取25ml质量分数为98%的浓硫酸,将氧化石墨烯和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1 小时;移去冰水浴,称取0.6g的高锰酸钾加入到混合液中,室温下继续搅拌2 小时;换成水浴,将水浴温度设置为45度,反应时间为60min;将水浴温度升高至90度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphene oxide powder, measure 25ml of concentrated sulfuric acid with a mass fraction of 98%, mix graphene oxide and concentrated sulfuric acid in a beaker, place the beaker in an ice-water bath, and stir for 1 hour at a speed of 300rpm; remove In an ice-water bath, 0.6 g of potassium permanganate was weighed and added to the mixed solution, and stirring was continued for 2 hours at room temperature; replaced with a water bath, the temperature of the water bath was set to 45 degrees, and the reaction time was 60 min; the temperature of the water bath was raised to 90 degrees , 40ml of pure water or deionized water was added dropwise for 30min.

将反应后的氧化石墨烯量子点溶液配成1mg/ml溶液,氧化石墨烯与水合肼质量配比为10:7,加入水合肼后将其放在90~95度水浴中还原,1h后取出。The reacted graphene oxide quantum dot solution was prepared into a 1 mg/ml solution, and the mass ratio of graphene oxide to hydrazine hydrate was 10:7. After adding hydrazine hydrate, it was placed in a 90-95 degree water bath for reduction, and taken out after 1 hour. .

将反应后悬浮液用0.22um的滤膜进行过滤,然后用截留分子量为 3000~8000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终得到6nm左右石墨烯量子点;The suspension after the reaction was filtered with a 0.22um filter membrane, and then dialyzed with a dialysis bag with a molecular weight cut-off of 3000-8000 for a week, and the water was changed twice a day; the dialysis suspension was dried in a freeze dryer, and finally 6nm was obtained. Left and right graphene quantum dots;

将0.1wt%~1wt%石墨烯量子点加入到聚甲基丙烯酸甲酯中充分搅拌,即可形成稳定的GQDs/PMMA复合封装基质材料;Add 0.1wt% to 1wt% graphene quantum dots into polymethyl methacrylate and stir well to form a stable GQDs/PMMA composite encapsulation matrix material;

取0.8g的复合基质并加入0.1g荧光粉充分搅拌,脱泡机抽真空除去气泡后,采用自由点胶法涂覆在LED芯片表面,用光电烤箱于150℃加热1h固化。Take 0.8g of the composite matrix and add 0.1g of phosphor powder and stir it thoroughly. After the bubbles are removed by vacuuming with a defoaming machine, it is coated on the surface of the LED chip by a free dispensing method, and cured by heating at 150 °C for 1 h in a photoelectric oven.

实施例26Example 26

称量1g的石墨粉,量取23ml质量分数为98%的浓硫酸,将石墨粉和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1小时;称取 3g的高锰酸钾缓慢分批次加入到混合液中,继续搅拌3小时;移去冰水浴,换成水浴,将水浴温度设置为35度,反应时间为30min;将水浴温度升高至80 度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphite powder, take 23ml of concentrated sulfuric acid with a mass fraction of 98%, mix the graphite powder and concentrated sulfuric acid in a beaker, put the beaker in an ice-water bath, and stir at a speed of 300rpm for 1 hour; weigh 3g of Potassium permanganate was slowly added to the mixed solution in batches, and stirring was continued for 3 hours; the ice-water bath was removed, replaced with a water bath, the temperature of the water bath was set to 35 degrees, and the reaction time was 30 min; the temperature of the water bath was raised to 80 degrees, Add 40ml of pure or deionized water dropwise for 30min.

取10ml的浓盐酸按照1:9的比例进行稀释,将反应液用稀释后的稀盐酸进行洗涤、离心,使用去离子水洗涤离心直至溶液PH值接近7,超声处理半小时;然后用截留分子量为8000~14000的透析袋透析一周,每天换水2次;将透析后的悬浮液在冷冻干燥机中干燥,最终的到氧化石墨烯粉末。Take 10ml of concentrated hydrochloric acid and dilute it at a ratio of 1:9, wash and centrifuge the reaction solution with diluted hydrochloric acid, use deionized water to wash and centrifuge until the pH value of the solution is close to 7, and ultrasonically treat for half an hour; then use molecular weight cut-off Dialyze the dialysis bag of 8000-14000 for one week, and change the water twice a day; dry the dialysis suspension in a freeze dryer, and finally get the graphene oxide powder.

称量1g氧化石墨烯粉末,量取25ml质量分数为98%的浓硫酸,将氧化石墨烯和浓硫酸在烧杯中混合,烧杯放在冰水浴中,同时以300rpm的速度搅拌1 小时;移去冰水浴,称取0.6g的高锰酸钾加入到混合液中,室温下继续搅拌2 小时;换成水浴,将水浴温度设置为45度,反应时间为60min;将水浴温度升高至90度,滴加40ml的纯水或者去离子水,持续时间为30min。Weigh 1g of graphene oxide powder, measure 25ml of concentrated sulfuric acid with a mass fraction of 98%, mix graphene oxide and concentrated sulfuric acid in a beaker, place the beaker in an ice-water bath, and stir for 1 hour at a speed of 300rpm; remove In an ice-water bath, 0.6 g of potassium permanganate was weighed and added to the mixed solution, and stirring was continued for 2 hours at room temperature; replaced with a water bath, the temperature of the water bath was set to 45 degrees, and the reaction time was 60 min; the temperature of the water bath was raised to 90 degrees , 40ml of pure water or deionized water was added dropwise for 30min.

将反应后的氧化石墨烯量子点溶液配成1mg/ml溶液,氧化石墨烯与水合肼质量配比为10:7,加入水合肼后将其放在90~95度水浴中还原,1h后取出。The reacted graphene oxide quantum dot solution was prepared into a 1 mg/ml solution, and the mass ratio of graphene oxide to hydrazine hydrate was 10:7. After adding hydrazine hydrate, it was placed in a 90-95 degree water bath for reduction, and taken out after 1 hour. .

将反应后悬浮液用0.22um的滤膜进行过滤,然后用截留分子量为 3000~8000的透析袋透析一周,每天换水2次,最后制得尺寸为6nm左右,浓度10mg/mL石墨烯量子点溶液。The suspension after the reaction was filtered with a 0.22um filter membrane, and then dialyzed with a dialysis bag with a molecular weight cut-off of 3000-8000 for a week, and the water was changed twice a day. Finally, graphene quantum dots with a size of about 6 nm and a concentration of 10 mg/mL were obtained. solution.

用四氢呋喃溶解光学硅胶B胶后,加入10wt%~100wt%石墨烯量子点溶液充分搅拌,加热烘干多余水分和四氢呋喃后,即可形成的GQDs/Silicone复合封装基质;After dissolving the optical silica gel B glue with tetrahydrofuran, adding 10wt% to 100wt% graphene quantum dot solution and fully stirring, heating and drying excess water and tetrahydrofuran, the GQDs/Silicone composite encapsulation matrix can be formed;

取0.8g的复合基质并加入0.1g荧光粉充分搅拌,脱泡机抽真空除去气泡后,采用自由点胶法涂覆在LED芯片表面,用光电烤箱于150℃加热1h固化。Take 0.8g of the composite matrix and add 0.1g of phosphor powder and stir it thoroughly. After the bubbles are removed by vacuuming with a defoaming machine, it is coated on the surface of the LED chip by a free dispensing method, and cured by heating at 150 °C for 1 h in a photoelectric oven.

Claims (10)

1. a kind of preparation method of the composite package matrix for LED encapsulation, which comprises the following steps:
(1), graphene oxide solution is prepared using strong acid and oxidizer treatment crystalline graphite powder and purified, ultrasound, finally It is dry;
(2), dried graphene oxide is prepared into graphene oxide quantum dot (GOQDs) solution by chemical cleavage, and Graphene quantum dot (GQDs) is obtained after restoring, purifying;
(3), the GQDs for obtaining step (2), then evenly spreads in colloid, obtains stable GQDs composite package matrix material Material;
(4), the matrix of packages material that step (3) obtain is coated in the light direction surface of LED and solidified.
2. a kind of preparation method of the composite package matrix for LED encapsulation according to claim 1, it is characterised in that: In step (1), graphene oxide is prepared using improved Hummers method or Staudenmaier method, Hummers Method, ultrasonic wave added Hummers method and Brodie method etc..
3. a kind of preparation method of the composite package matrix for LED encapsulation according to claim 1, it is characterised in that: In step (1), the strong acid refers to the concentrated sulfuric acid (H2SO4), be also possible to one of the concentrated sulfuric acid, concentrated nitric acid, concentrated phosphoric acid or Several combinations of person, and the ratio of graphite powder and nitration mixture is the corresponding 20~40ml mixed acid solution of 1g.The permanganic acid that the oxidant refers to The mass ratio of potassium chlorate under potassium (KMnO4) or fuming nitric aicd environment, potassium chlorate and graphite powder is 300%~500%; Either sodium nitrate and potassium permanganate;Wherein the mass ratio of sodium nitrate and graphite powder is 30%~60%, potassium permanganate and graphite The mass ratio of powder is 300%~500%.
4. a kind of preparation method of the composite package matrix for LED encapsulation according to claim 1, it is characterised in that: In step (1), the improved Hummers method of use shares low temperature, medium temperature, high temperature three phases according to reaction sequence, it is desirable that low Thermophase reacting liquid temperature is lower than 10 degree, and the time continues 3 hours or more;Medium temperature elementary reaction liquid temperature between 35~40 degree, Time was at 0.5~2 hour;Wherein middle thermophase is the main oxidation process of experiment, passes through control reaction time and potassium permanganate Amount can prepare the graphene oxides of different degree of oxidation;Hot stage requires reacting liquid temperature between 80~90 degree, instead It is half an hour between seasonable.
5. a kind of preparation method of the composite package matrix for LED encapsulation according to claim 1, it is characterised in that: In step (1), the purification step includes centrifuge washing, dialysis, is wherein needed three times before centrifuge washing using dilute hydrochloric acid Washing, dilute hydrochloric acid obtains by 37% concentrated hydrochloric acid according to the dilution proportion of 1:9, with after the multiple centrifuge washing of deionized water until molten Liquid pH value is close to 7, and dialysis bag retention molecular weight used is 8000~14000, and dialysis time changed water 2 times daily at one week or more; The ultrasonic procedure refers to that the drying referred to freezing drying, or dries in the shade naturally with Ultrasound Instrument ultrasound 30~60 minutes, Perhaps it air-dries or is dried by infrared heating or drying box.
6. a kind of preparation method of the composite package matrix for LED encapsulation according to claim 1, it is characterised in that: Chemical cleavage described in step (2) (chemical cutting) method refers to utilizing H2SO4/KMnO4To the open chain of GO (Unzipping) effect will prepare GO and be cut into smaller size of GOQDs, by the experiment duration for controlling chemical cleavage The GOQDs that different nano-scales can be prepared with the amount of potassium permanganate, the available various sizes of GQDs after reduction.
7. a kind of preparation method of the composite package matrix for LED encapsulation according to claim 1, it is characterised in that: Reduction described in step (2) refers to carrying out using the methods of electronation, high temperature reduction, electrochemical reduction, solvothermal Deoxidation treatment, repairs its conjugated structure, and GOQDs is reduced into GQDs;Purification refers to restore using the filter membrane of 0.22um Reaction solution in afterwards is filtered, and dialysis bag retention molecular weight used is 3000~8000, can also be using high speed centrifugation etc. Other forms one or several kinds purify mode.
8. a kind of preparation method of the composite package matrix for LED encapsulation according to claim 1, it is characterised in that: Colloid described in step (3) is the combination of one or more of hot-setting adhesive or photoresists, and hot-setting adhesive is epoxy resin, silicon One or more kinds of combinations of glue, polymethyl methacrylate (PMMA), polycarbonate (PC);Photosensitive colloid includes emulsion And film forming agent, wherein emulsion be bichromate, chromate, diazonium compound either one of azido cpd or A variety of combinations;Film forming agent is polyvinyl alcohol (PVA), gum arabic, one in polyimides or polyvinyl acetate emulsion Kind or a variety of combinations.
9. a kind of preparation method of the composite package matrix for LED encapsulation according to claim 1, it is characterised in that: The coating of matrix of packages material described in step (4) is directly to coat the GQDs composite package host material of the acquisition of step (3) On LED chip surface as pumping photosphere, or the remote layer as fluorescent coating;Or by the matrix of packages material It mixes and is coated in as phosphor powder layer on the light-emitting area of LED chip with fluorescent powder, or be coated in LED light direction the preceding paragraph In any output face of distance;(coating) mode of coating is in spin-coating method, spray coating method, dotting glue method, print process and infusion process It is one or several kinds of.
10. a kind of preparation method of the composite package matrix for LED encapsulation according to claim 1, it is characterised in that: LED described in step (4) is the combination of organic LED, inorganic LED or both;The LED is single LED chip, either The plurality of LEDs chipset or whole wafer of same substrate;The curing mode is oven heat, electric boiling plate or red One or more combinations of external heat, cured temperature and time is depending on the Property requirements of colloid (such as silica gel);Or Using photocuring, such as use Photosetting colloid, photoresists etc..
CN201910349709.5A 2019-04-28 2019-04-28 A kind of preparation method of the composite package matrix for LED encapsulation Pending CN110066516A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910349709.5A CN110066516A (en) 2019-04-28 2019-04-28 A kind of preparation method of the composite package matrix for LED encapsulation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910349709.5A CN110066516A (en) 2019-04-28 2019-04-28 A kind of preparation method of the composite package matrix for LED encapsulation

Publications (1)

Publication Number Publication Date
CN110066516A true CN110066516A (en) 2019-07-30

Family

ID=67369257

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910349709.5A Pending CN110066516A (en) 2019-04-28 2019-04-28 A kind of preparation method of the composite package matrix for LED encapsulation

Country Status (1)

Country Link
CN (1) CN110066516A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114132921A (en) * 2021-04-28 2022-03-04 宁波中乌新材料产业技术研究院有限公司 An electrochemical method for preparing graphene nanoparticles
CN117430373A (en) * 2023-12-21 2024-01-23 朗峰新材料启东有限公司 Anti-interference nanocrystalline composite magnetic core material and preparation method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102807209A (en) * 2012-08-02 2012-12-05 清华大学 Method for preparing graphene quantum dots
CN103738941A (en) * 2013-11-14 2014-04-23 盐城增材科技有限公司 Graphene quantum dot preparation method
WO2016025051A2 (en) * 2014-05-26 2016-02-18 William Marsh Rice University Graphene quantum dot-polymer composites and methods of making the same
CN106633887A (en) * 2016-06-21 2017-05-10 深圳市大族元亨光电股份有限公司 Graphene heat conduction silicone grease for high-power LED and method for preparing graphene heat conduction silicone grease
CN109082264A (en) * 2018-07-04 2018-12-25 南京理工大学 Applications of MoS2/RGO Composite Materials

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102807209A (en) * 2012-08-02 2012-12-05 清华大学 Method for preparing graphene quantum dots
CN103738941A (en) * 2013-11-14 2014-04-23 盐城增材科技有限公司 Graphene quantum dot preparation method
WO2016025051A2 (en) * 2014-05-26 2016-02-18 William Marsh Rice University Graphene quantum dot-polymer composites and methods of making the same
CN106633887A (en) * 2016-06-21 2017-05-10 深圳市大族元亨光电股份有限公司 Graphene heat conduction silicone grease for high-power LED and method for preparing graphene heat conduction silicone grease
CN109082264A (en) * 2018-07-04 2018-12-25 南京理工大学 Applications of MoS2/RGO Composite Materials

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114132921A (en) * 2021-04-28 2022-03-04 宁波中乌新材料产业技术研究院有限公司 An electrochemical method for preparing graphene nanoparticles
CN114132921B (en) * 2021-04-28 2023-04-18 宁波中乌新材料产业技术研究院有限公司 Electrochemical method for preparing graphene nanoparticles
CN117430373A (en) * 2023-12-21 2024-01-23 朗峰新材料启东有限公司 Anti-interference nanocrystalline composite magnetic core material and preparation method thereof
CN117430373B (en) * 2023-12-21 2024-02-23 朗峰新材料启东有限公司 Anti-interference nanocrystalline composite magnetic core material and preparation method thereof

Similar Documents

Publication Publication Date Title
Kim et al. Photo-patternable quantum dots/siloxane composite with long-term stability for quantum dot color filters
CN106098952B (en) Organosilicon functionalized red-light carbon quantum dot and preparation method and application thereof
CN104774470B (en) A kind of sealant and great power LED for great power LED
CN103421513A (en) White-light quantum-dot composite particle and method for manufacturing same
CN110272208B (en) A kind of green fluorescent glass ceramic and its preparation method and application
KR102141645B1 (en) Wavelength conversion polymer film
CN113045978B (en) Preparation method of carbon quantum dot-water-soluble polyurethane solution
CN110066516A (en) A kind of preparation method of the composite package matrix for LED encapsulation
CN111205851B (en) Liquid-phase packaged quantum dot microsphere, preparation method and application
CN107342348B (en) A kind of preparation method of LED device
CN101887941A (en) A kind of preparation method of LED phosphor layer
CN106684231B (en) A kind of CSP chip scale packages and packaging method
CN104371732A (en) Method for preparing fluorescent gel glass by adopting hydrophobic semiconductor quantum dots
CN108681206A (en) Has the function of the composite film material and preparation method thereof of up-conversion luminescence and ultraviolet light sensitive characteristic simultaneously
CN110016334B (en) Method for improving light emitting efficiency of pc-LEDs by using forward scattering enhanced quantum dot fluorescent powder
CN105957945B (en) A kind of light emitting diode and preparation method thereof with photonic crystal
CN110467913B (en) Coating method of large-particle-size LED fluorescent powder
WO2011143792A1 (en) Releasable light-converting luminescent film
CN103500786A (en) Full-angle luminous LED (light-emitting diode) light source and preparation method thereof
CN103367613A (en) Method for preparing white light source with dual-band-gap photonic crystals
CN114574197B (en) Carbon dot-organic silicon composite fluorescent material and preparation method and application thereof
CN114989817B (en) Transition metal doped narrow-band luminescent gel material and preparation method and application thereof
CN101916812A (en) A kind of light-emitting diode and its preparation method
CN104279514B (en) Wavelength converter and preparation method thereof, related lighting fixtures and optical projection system
Yu et al. Enhanced photoluminescence intensity of quantum dot films with the sandwich column array structure by uniform electrical induction

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20190730

RJ01 Rejection of invention patent application after publication