CN110061722B - 一种由mos型器件变频驱动的负载功率调整电路 - Google Patents
一种由mos型器件变频驱动的负载功率调整电路 Download PDFInfo
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- CN110061722B CN110061722B CN201910310814.8A CN201910310814A CN110061722B CN 110061722 B CN110061722 B CN 110061722B CN 201910310814 A CN201910310814 A CN 201910310814A CN 110061722 B CN110061722 B CN 110061722B
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- power supply
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 5
- 239000003990 capacitor Substances 0.000 claims description 65
- 238000004804 winding Methods 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 12
- 230000000087 stabilizing effect Effects 0.000 description 27
- 230000033228 biological regulation Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000006641 stabilisation Effects 0.000 description 4
- 238000011105 stabilization Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- MEGPURSNXMUDAE-RLMOJYMMSA-N scopoline Chemical compound C([C@H](O1)C2)[C@@H]3N(C)[C@H]2[C@H]1[C@H]3O MEGPURSNXMUDAE-RLMOJYMMSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/017—Adjustment of width or dutycycle of pulses
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/53—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
- H03K3/57—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback the switching device being a semiconductor device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K7/00—Modulating pulses with a continuously-variable modulating signal
- H03K7/08—Duration or width modulation ; Duty cycle modulation
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- Circuit Arrangement For Electric Light Sources In General (AREA)
- Dc-Dc Converters (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201910310814.8A CN110061722B (zh) | 2019-04-18 | 2019-04-18 | 一种由mos型器件变频驱动的负载功率调整电路 |
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CN201910310814.8A CN110061722B (zh) | 2019-04-18 | 2019-04-18 | 一种由mos型器件变频驱动的负载功率调整电路 |
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CN110061722A CN110061722A (zh) | 2019-07-26 |
CN110061722B true CN110061722B (zh) | 2021-03-26 |
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CN201910310814.8A Active CN110061722B (zh) | 2019-04-18 | 2019-04-18 | 一种由mos型器件变频驱动的负载功率调整电路 |
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CN (1) | CN110061722B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110854985B (zh) * | 2019-11-11 | 2022-04-05 | 国网山东省电力公司电力科学研究院 | 一种基于dsp的最大功率独立供电系统 |
CN111293907B (zh) * | 2020-04-03 | 2025-07-11 | 广州晶合设备有限公司 | 一种大功率电源 |
CN112217429B (zh) * | 2020-09-29 | 2022-04-19 | 西安微电子技术研究所 | 一种无刷电机驱动电路及方法 |
CN113872775B (zh) * | 2021-09-28 | 2023-11-21 | 华勤技术股份有限公司 | 供电电路及受电端设备 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101174788A (zh) * | 2007-10-22 | 2008-05-07 | 株洲南车时代电气股份有限公司 | 一种电压驱动型功率半导体器件关断过电压保护电路 |
CN101694969A (zh) * | 2009-10-22 | 2010-04-14 | 卧龙电气集团股份有限公司 | 变频调速输入电压转换装置及其方法 |
CN103026604A (zh) * | 2010-03-12 | 2013-04-03 | 密克罗奇普技术公司 | 具有自举电路激励器的数字装置 |
US10044350B1 (en) * | 2017-05-25 | 2018-08-07 | Navitas Semiconductor, Inc. | Power FET driver |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103546021B (zh) * | 2013-10-31 | 2016-04-13 | 矽力杰半导体技术(杭州)有限公司 | 电流反馈方法及电流反馈电路及驱动电路及开关电源 |
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2019
- 2019-04-18 CN CN201910310814.8A patent/CN110061722B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101174788A (zh) * | 2007-10-22 | 2008-05-07 | 株洲南车时代电气股份有限公司 | 一种电压驱动型功率半导体器件关断过电压保护电路 |
CN101694969A (zh) * | 2009-10-22 | 2010-04-14 | 卧龙电气集团股份有限公司 | 变频调速输入电压转换装置及其方法 |
CN103026604A (zh) * | 2010-03-12 | 2013-04-03 | 密克罗奇普技术公司 | 具有自举电路激励器的数字装置 |
US10044350B1 (en) * | 2017-05-25 | 2018-08-07 | Navitas Semiconductor, Inc. | Power FET driver |
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Effective date of registration: 20200522 Address after: 611731 Chengdu province high tech Zone (West) West source Avenue, No. 2006 Applicant after: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY Applicant after: SHANGHAI FINE CHIP SEMICONDUCTOR Co.,Ltd. Applicant after: SICHUAN BLUE COLOUR ELECTRONICS TECHNOLOGY Co.,Ltd. Applicant after: Sichuan Xinhe Li Cheng Technology Co.,Ltd. Applicant after: Sichuan Suining Lipuxin Microelectronic Co.,Ltd. Applicant after: SICHUAN SICHIP MICRO TECHNOLOGIES Co.,Ltd. Address before: 611731 Chengdu province high tech Zone (West) West source Avenue, No. 2006 Applicant before: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY Applicant before: SHANGHAI FINE CHIP SEMICONDUCTOR Co.,Ltd. Applicant before: SICHUAN BLUE COLOUR ELECTRONICS TECHNOLOGY Co.,Ltd. Applicant before: China Chippacking Technology Co.,Ltd. Applicant before: Sichuan Xinhe Li Cheng Technology Co.,Ltd. Applicant before: Sichuan Suining Lipuxin Microelectronic Co.,Ltd. Applicant before: SICHUAN SICHIP MICRO TECHNOLOGIES Co.,Ltd. |
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