CN110058434A - Electrically-driven surface plasmon polariton light source structure - Google Patents
Electrically-driven surface plasmon polariton light source structure Download PDFInfo
- Publication number
- CN110058434A CN110058434A CN201910344843.6A CN201910344843A CN110058434A CN 110058434 A CN110058434 A CN 110058434A CN 201910344843 A CN201910344843 A CN 201910344843A CN 110058434 A CN110058434 A CN 110058434A
- Authority
- CN
- China
- Prior art keywords
- metal film
- light
- source structure
- light source
- electric drive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 73
- 239000002184 metal Substances 0.000 claims abstract description 73
- 230000001681 protective effect Effects 0.000 claims description 17
- 239000000126 substance Substances 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 11
- 238000009792 diffusion process Methods 0.000 abstract description 3
- 230000002349 favourable effect Effects 0.000 abstract 1
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000000644 propagated effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000005672 electromagnetic field Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000000975 dye Substances 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000002082 metal nanoparticle Substances 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 150000003384 small molecules Chemical class 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000007844 bleaching agent Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004471 energy level splitting Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- PQTCMBYFWMFIGM-UHFFFAOYSA-N gold silver Chemical compound [Ag].[Au] PQTCMBYFWMFIGM-UHFFFAOYSA-N 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004416 surface enhanced Raman spectroscopy Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/008—Surface plasmon devices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
The invention relates to an electrically-driven surface plasmon light source structure, which comprises a multilayer structure consisting of a first metal film, a light-emitting layer and a second metal film; a luminescent layer is arranged above the first metal film, and a second metal film is arranged above the luminescent layer; the multilayer structure is provided with a perforation; this electric drive surface plasmon light source structure, simple structure not only is the characteristic that can full play surface plasmon, improves the light source structure of surface plasmon light source effect, moreover the light source structural protection film of having plated, have fine waterproof, dustproof effect, protection light source structure that can be fine for the light source structure can use in more complicated environment, and produced light propagates through perforation or the hole that sets up on the light source structure, is favorable to the diffusion of light, thereby has improved the homogeneity of light source luminous intensity.
Description
Technical field
The invention belongs to light sources technical fields, and in particular to a kind of electric drive surface phasmon light-source structure.
Background technique
Surface phasmon (SurfacePlasmons, SPs) is that the free electron coherent oscillation of metal medium interface is formed
A kind of electromagnetic surface wave.Since SPs can realize the transmission and manipulation of light within the scope of sub-wavelength, and can be some special
Generate the local optical electric field significantly increased in metal micro-nanostructure, thus it biosensor, surface-enhanced raman scattering enhancing and
The various fields such as photon circuit suffer from important application.In recent years, noble metal nano particles and nanometer semiconductor structure are answered
It closes and obtains the upsurge that optically resonance system due to it there are unique excellent properties different from compound monomer to cause research.Gold
The enhancing electromagnetic field of local caused by the local surface phasmon of metal nano-particle can produce a series of nonlinear effect,
Coupling with exciton in semiconductor-quantum-point can be between the production of energy transfer, new polariton light absorption, light emitting, nanostructure
Life is regulated and controled, wherein the generation of new polariton shows surface phasmon and exciton carries out strong interaction, namely is entered
Close coupling area.The surface phasmon of close coupling and exciton can reversibly AC energy, the period in femtosecond magnitude, this
Quantum manipulation photon, single-photon light source and transistor, opening the light without threshold value lasing, ultrafast full light has with fields such as quantum information processing
Important application.
Electromagnetic field is limited to the characteristic that sub-wavelength range and local electromagnetic field intensity greatly enhance by surface phasmon, is made
Close coupling just can be obtained in the case where not needing closed resonator in room temperature.Surface phasmon and exciton are formed when close coupling
Energy level splitting namely Rabi splitting can be observed in resonant frequency in new polariton.Most research concentrates on table now
The close coupling of exciton in face phasmon and dyestuff or small molecule, and very with exciton close coupling research ground in semiconductor-quantum-point
It is few.Semiconductor-quantum-point has adjustable photoelectric property height, absorption and fluorescence section height relative to dyestuff or small molecule, is not easy to send out
The series of advantages such as raw fluorescent bleach will become the core material of New Generation Optical electrical part.
Summary of the invention
The object of the present invention is to provide a kind of electric drive surface phasmon light-source structures.
The electric drive surface phasmon light-source structure, including being made of the first metal film, luminescent layer, the second metal film
Multilayered structure；It is provided with luminescent layer above first metal film, the second metal film is provided with above the luminescent layer；Institute
It states and is provided with perforation on multilayered structure.
The lower surface that the perforation is located at the first metal film described in the first metal film, the second metal film is provided with protective film；
The upper surface of second metal film is again provided with protective film.
The perforation is to be set to the second metal film, the hole on luminescent layer.
Described hole is located at the partial interior of the second metal film filled with the second transparent filling substance.
The lower surface of first metal film is provided with the second protective film；The upper surface of second metal film is equally arranged
There is the second protective film.
The luminescent layer is quantum well layer.
The quantum well layer is made of GaAs or InGaAs.
The amount luminescent layer with a thickness of 50nm~80nm.
First metal film, the second metal film be by gold silver or copper at.
Beneficial effects of the present invention: this electric drive surface phasmon light-source structure provided by the invention, not only structure
Simply, it is a kind of characteristic that can give full play to surface phasmon, improves the light-source structure of surface phasmon light source effect,
And it is coated with protective film on the light-source structure, there is good waterproof and dustproof effect, can be good at protecting light source knot
Structure enables light-source structure to use in more complex environment, and generated light is by being arranged in wearing on light-source structure
Hole or hole are propagated, and the diffusion of light is conducive to, to improve the uniformity of light source luminescent intensity.
The present invention is described in further details below with reference to attached drawing.
Detailed description of the invention
Fig. 1 is electric drive surface phasmon light-source structure schematic diagram one.
Fig. 2 is electric drive surface phasmon light-source structure schematic diagram two.
Fig. 3 is electric drive surface phasmon light-source structure schematic diagram three.
Fig. 4 is electric drive surface phasmon light-source structure schematic diagram four.
In figure: 1, the first metal film；2, luminescent layer；3, the second metal film；4, it perforates；5, transparent filling substance；6, second thoroughly
Bright filler；7, hole；8, protective film；9, the second protective film.
Specific embodiment
Reach the technical means and efficacy that predetermined purpose is taken for the present invention is further explained, below in conjunction with attached drawing and reality
Example is applied to a specific embodiment of the invention, structure feature and its effect, detailed description are as follows.
Embodiment 1
A kind of electric drive surface phasmon light-source structure as shown in Figure 1 and Figure 2 is present embodiments provided, including by
The multilayered structure that one metal film 1, luminescent layer 2, the second metal film 3 are constituted；The top of first metal film 1 is provided with luminescent layer
2, the top of the luminescent layer 2 is provided with the second metal film 3；Perforation 4 is provided on the multilayered structure；First metal film 1,
Two metal films 3 are attached as the positive and negative anodes of electrode and external power supply, so that luminescent layer 2 is in circuit loop, meanwhile, the
One metal film 1, the second metal film 3 form a Fabry-Perot interference cavity, when luminescent layer 2 generates light, Neng Gou
Electromagnetism on second metal film 3 generates surface phasmon phenomenon, and surface phasmon can be enhanced in Fabry-Perot interference cavity
Phenomenon, so that the light that luminescent layer issues is propagated in perforation 4, to form hole configurations micro-nano light source.
Further, the perforation 4 is located at the first metal film 1, the partial interior of the second metal film 3 is filled with transparent filling
Object 5；The lower surface of first metal film 1 is provided with protective film 8；The upper surface of second metal film 3 is again provided with guarantor
Cuticula 8；Closed electric drive surface phasmon light-source structure can be formed in this way, and there is good waterproof and dustproof effect, energy
Enough protection light-source structures well, enable light-source structure to use in more complex environment, are able to extend light-source structure
Service life.
Further, the luminescent layer 2 is quantum well layer.
The quantum well layer is made of the oxide that can be shone, such as GaAs or InGaAs are made.
The amount luminescent layer 5 with a thickness of 50nm~80nm, preferentially can choose 50nm, 55nm, 60nm, 70nm etc..
Further, first metal film 1, the second metal film 3 preferentially can choose with a thickness of 100nm~500nm
200nm, 300nm, 400nm, 500nm etc.；First metal film 1, the second metal film 3 are made of metal with good conductivity,
More commonly used is gold, silver, copper, can select suitable thickness under the premise of saving cost.
Further, the transparent filling substance 5, protective film 8 may each be and be made of silica, and silica has very
Good translucency, and it is non-conductive, it can play a protective role, avoid getting an electric shock.
The electric drive surface phasmon light-source structure, is not only simple in structure, be one kind can give full play to surface etc. from
The characteristic of excimer, improves the light-source structure of surface phasmon light source effect, and protection is coated on the light-source structure
Film 8 has good waterproof and dustproof effect, can be good at protecting light-source structure, enables light-source structure more complicated
Environment in use, generated light passes through the perforation 4 that is arranged on light-source structure and is propagated, be conducive to the diffusion of light, from
And improve the uniformity of light source luminescent.
Embodiment 2
On the basis of embodiment 1, electric drive surface phasmon light-source structure as shown in Figure 3, Figure 4, including by
The multilayered structure that one metal film 1, luminescent layer 2, the second metal film 3 are constituted；The top of first metal film 1 is provided with luminescent layer
2, the top of the luminescent layer 2 is provided with the second metal film 3；Hole 7 on second metal film, luminescent layer 2；Hole 7 is not
It being set on the first metal film 1, such first metal film 1 can be used as reflective layer, downward part just reflected, so that
More light are projected from hole, improve the intensity of light source；First metal film 1, the second metal film 3 are as electrode and external power supply
Positive and negative anodes are attached, so that luminescent layer 2 is in circuit loop, meanwhile, the first metal film 1, the second metal film 3 form one
A Fabry-Perot interference cavity can generate surface etc. in the electromagnetism on the second metal film 3 when luminescent layer 2 generates light
From excimer phenomenon, surface phasmon phenomenon is can be enhanced in Fabry-Perot interference cavity, so that the light that luminescent layer issues is in hole 7
It is inside propagated, to form hole configurations micro-nano light source.
Further, described hole 7 is located at the partial interior of the second metal film 3 filled with the second transparent filling substance 6；It is described
The lower surface of first metal film 1 is provided with the second protective film 9；The upper surface of second metal film 3 is again provided with the second guarantor
Cuticula 9；Closed electric drive surface phasmon light-source structure can be formed in this way, and there is good waterproof and dustproof effect, energy
Enough protection light-source structures well, enable light-source structure to use in more complex environment, are able to extend light-source structure
Service life.
Further, the luminescent layer 2 is quantum well layer.
Further, the quantum well layer is made of the oxide that can be shone, such as GaAs or InGaAs are made.
Further, the amount luminescent layer 5 with a thickness of 50nm~80nm, preferentially can choose 50nm, 55nm, 60nm,
70nm etc..
Further, first metal film 1, the second metal film 3 preferentially can choose with a thickness of 100nm~500nm
200nm, 300nm, 400nm, 500nm etc.；First metal film 1, the second metal film 3 are made of metal with good conductivity,
More commonly used is gold, silver, copper, can select suitable thickness under the premise of saving cost.
Further, second transparent filling substance 6, the second protective film 9 may each be and be made of silica, titanium dioxide
Silicon has good translucency, and non-conductive, can play a protective role, avoid getting an electric shock.
The electric drive surface phasmon light-source structure, is not only simple in structure, be one kind can give full play to surface etc. from
The characteristic of excimer, improves the light-source structure of surface phasmon light source effect, and is coated with second on the light-source structure
Protective film 9 has good waterproof and dustproof effect, can be good at protecting light-source structure, enables light-source structure more
It is used in complex environment, generated light passes through the hole 7 being arranged on light-source structure and propagated, and is conducive to the expansion of light
It dissipates, and the light of bottom can be reflected, to improve the intensity and luminous uniformity of light source luminescent.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist
Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to of the invention
Protection scope.
Claims (10)
1. a kind of electric drive surface phasmon light-source structure, it is characterised in that: including by the first metal film (1), luminescent layer
(2), the multilayered structure that the second metal film (3) is constituted；Luminescent layer (2), the hair are provided with above first metal film (1)
The second metal film (3) are provided with above photosphere (2)；Perforation (4) are provided on the multilayered structure.
2. a kind of electric drive surface phasmon light-source structure as described in claim 1, it is characterised in that: the perforation (4)
Partial interior positioned at the first metal film (1), the second metal film (3) is filled with transparent filling substance (5).
3. a kind of electric drive surface phasmon light-source structure as described in claim 1, it is characterised in that: first metal
The lower surface of film (1) is provided with protective film (8)；The upper surface of second metal film (3) is again provided with protective film (8).
4. a kind of electric drive surface phasmon light-source structure as described in claim 1, it is characterised in that: the perforation (4)
It is to be set to the second metal film (1), the hole (7) on luminescent layer (2).
5. a kind of electric drive surface phasmon light-source structure as claimed in claim 4, it is characterised in that: described hole (7)
Partial interior positioned at the second metal film (3) is filled with the second transparent filling substance (6).
6. a kind of electric drive surface phasmon light-source structure as claimed in claim 4, it is characterised in that: first metal
The lower surface of film (1) is provided with the second protective film (9)；The upper surface of second metal film (3) is again provided with the second protection
Film (9).
7. a kind of electric drive surface phasmon light-source structure as described in claim 1, it is characterised in that: the luminescent layer
It (2) is quantum well layer.
8. a kind of electric drive surface phasmon light-source structure as claimed in claim 7, it is characterised in that: the quantum well layer
It is made of GaAs or InGaAs.
9. a kind of electric drive surface phasmon light-source structure as claimed in claim 7, it is characterised in that: the amount luminescent layer
(5) with a thickness of 50nm~80nm.
10. a kind of electric drive surface phasmon light-source structure as described in claim 1, it is characterised in that: first gold medal
Belong to film (1), the second metal film (3) be by gold or silver or copper at.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910344843.6A CN110058434A (en) | 2019-04-26 | 2019-04-26 | Electrically-driven surface plasmon polariton light source structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910344843.6A CN110058434A (en) | 2019-04-26 | 2019-04-26 | Electrically-driven surface plasmon polariton light source structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110058434A true CN110058434A (en) | 2019-07-26 |
Family
ID=67321007
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910344843.6A Pending CN110058434A (en) | 2019-04-26 | 2019-04-26 | Electrically-driven surface plasmon polariton light source structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110058434A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0117606A1 (en) * | 1983-01-28 | 1984-09-05 | Xerox Corporation | Collector for a LED array |
| JP2004172160A (en) * | 2002-11-15 | 2004-06-17 | Denso Corp | Light emitting element |
| TW200802929A (en) * | 2006-06-14 | 2008-01-01 | Univ Nat Taiwan | Light emitting device and method of manufacturing the same |
| CN103050591A (en) * | 2011-10-14 | 2013-04-17 | 中国科学院物理研究所 | Surface plasmon electro excitation source and manufacturing method thereof |
| CN103518096A (en) * | 2011-02-16 | 2014-01-15 | 齐扎拉光系统有限责任公司 | LED light module |
| CN103928579A (en) * | 2014-04-22 | 2014-07-16 | 东南大学 | an ultraviolet light emitting diode |
| CN104051587A (en) * | 2014-06-19 | 2014-09-17 | 中国科学院半导体研究所 | Preparation method of surface plasmon-enhanced GaN-based nanohole LED |
| US20150162560A1 (en) * | 2013-12-06 | 2015-06-11 | Industrial Technology Research Institute | Light emitting device |
-
2019
- 2019-04-26 CN CN201910344843.6A patent/CN110058434A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0117606A1 (en) * | 1983-01-28 | 1984-09-05 | Xerox Corporation | Collector for a LED array |
| JP2004172160A (en) * | 2002-11-15 | 2004-06-17 | Denso Corp | Light emitting element |
| TW200802929A (en) * | 2006-06-14 | 2008-01-01 | Univ Nat Taiwan | Light emitting device and method of manufacturing the same |
| CN103518096A (en) * | 2011-02-16 | 2014-01-15 | 齐扎拉光系统有限责任公司 | LED light module |
| CN103050591A (en) * | 2011-10-14 | 2013-04-17 | 中国科学院物理研究所 | Surface plasmon electro excitation source and manufacturing method thereof |
| US20150162560A1 (en) * | 2013-12-06 | 2015-06-11 | Industrial Technology Research Institute | Light emitting device |
| CN103928579A (en) * | 2014-04-22 | 2014-07-16 | 东南大学 | an ultraviolet light emitting diode |
| CN104051587A (en) * | 2014-06-19 | 2014-09-17 | 中国科学院半导体研究所 | Preparation method of surface plasmon-enhanced GaN-based nanohole LED |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105374918B (en) | Light emitting device and display device using the same | |
| Ji et al. | Non-blinking quantum dot with a plasmonic nanoshell resonator | |
| CN105374919B (en) | Light emitting device and display device using the same | |
| Fan et al. | Improving the performance of light-emitting diodes via plasmonic-based strategies | |
| KR100970265B1 (en) | Organic light emitting display device having surface plasmon resonance structure and manufacturing method thereof | |
| Yuan et al. | Antibunching single-photon emission and blinking suppression of CdSe/ZnS quantum dots | |
| US11322706B2 (en) | Quantum dot film, quantum dot light-emitting assembly and display device | |
| CN104103766A (en) | Organic light-emitting diode, array substrate and fabrication method thereof and display device | |
| Flatae et al. | Plasmon-assisted suppression of surface trap states and enhanced band-edge emission in a bare CdTe quantum dot | |
| CN103022899A (en) | Method for generating surface plasmon laser by current pumping | |
| Mathew et al. | Effect of Au coating on optical properties of CdS nanoparticles and their optical limiting studies | |
| CN105261932B (en) | A kind of light source based on exciton close coupling in local surface phasmon and quantum dot | |
| Kulkarni et al. | Quantum dot–polymer composites in light-emitting diode applications | |
| Reyna et al. | Beyond third-order optical nonlinearities in liquid suspensions of metal-nanoparticles and metal-nanoclusters | |
| Wang et al. | Emission enhancement from CdSe/ZnS quantum dots induced by strong localized surface plasmonic resonances without damping | |
| CN110058434A (en) | Electrically-driven surface plasmon polariton light source structure | |
| CN101702047B (en) | A Method for Remotely Exciting Single Photon Sources Using Surface Plasmons | |
| Pan et al. | Perovskite quantum laser with enhanced population inversion driven by plasmon-induced hot electron transfer under potential shift polarization conditions | |
| Li et al. | Emission enhancement of light-emitting diode by localized surface plasmon induced by Ag inserts in p-GaN and TiO2-Ag grating | |
| CN110007488A (en) | A kind of enhancing coupling shape surface phasmon generation light source | |
| CN109901254B (en) | A structure to enhance the coupling strength of surface plasmons on graphene | |
| Zou et al. | Enhanced one-and two-photon pumped amplified spontaneous emissions of Ag-SiO2 core-shell nanowire composite embedded CH3NH3PbBr3 in SiO2 mesopores | |
| CN111952423B (en) | An electrically driven light source with high output efficiency of surface plasmon | |
| CN110007538B (en) | Overheat protection electroluminescent surface plasmon light source | |
| Chen et al. | Silver-Nanoparticle-Based Metallodielectric Wavelength-Selective Reflectors for Quantum-Dot-Enhanced White-Light-Emitting Diodes |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190726 |