CN110032045A - A kind of litho machine - Google Patents
A kind of litho machine Download PDFInfo
- Publication number
- CN110032045A CN110032045A CN201910326298.8A CN201910326298A CN110032045A CN 110032045 A CN110032045 A CN 110032045A CN 201910326298 A CN201910326298 A CN 201910326298A CN 110032045 A CN110032045 A CN 110032045A
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- Prior art keywords
- laser
- mask
- wafer
- gain medium
- cavity
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- 238000001259 photo etching Methods 0.000 claims abstract description 26
- 230000003287 optical effect Effects 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 5
- 238000002955 isolation Methods 0.000 claims description 38
- 238000001459 lithography Methods 0.000 claims description 36
- 238000005086 pumping Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000003384 imaging method Methods 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 230000004075 alteration Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The present invention relates to photoetching machine technique field more particularly to a kind of litho machines, including laser and mask seat, chip seat；Wherein laser is made of the first reflecting mirror, the second reflecting mirror, gain media and pump arrangement；First reflecting mirror is total reflection mirror, and the second reflecting mirror is partially reflecting mirror, and the laser that laser generates is exported by the second reflection lens one-shot；Wherein mask seat is arranged on the resonant optical path of the laser, and for installing mask, chip seat is arranged on the output light path of the laser, for installing lithographic wafer.When litho machine works, mask-placement is on the mask seat, and wafer arrangement is on the chip seat；Harmonic light passes through hole on mask, seam completes resonance, is exposed on the laser projection to chip of output to chip.
Description
Technical Field
The invention relates to the technical field of photoetching machines, in particular to a photoetching machine.
Background
The lithography machine is an important and critical device required by the modern semiconductor industry, and the existing lithography machine is influenced by the light diffraction effect, so that when the lithography precision is far less than the lithography wavelength, the lithography precision is more and more difficult to further improve.
In addition, the existing lithography machine has complex system, high process requirement, high implementation difficulty and huge implementation cost, so that a lithography machine is needed to solve the problems in the prior art.
Disclosure of Invention
The invention aims to provide a photoetching machine, which solves the problem of light diffraction by arranging a photoetching mask in a resonant circuit of a laser so as to improve the photoetching precision of the photoetching machine.
In order to achieve the above object, the present invention provides a lithography machine, comprising a laser, a mask base, and a wafer base;
the mask seat is arranged on a resonant light path of the laser and used for installing a photoetching mask;
the wafer seat is arranged on the output light path of the laser and is used for mounting a photoetching wafer.
Furthermore, when the photoetching machine works, the mask is arranged on the mask seat, and the wafer is arranged on the wafer seat; the resonant light passes through the holes and the slits on the mask to complete resonance, and the output laser is projected onto the wafer to expose the wafer.
Specifically, the laser consists of a first reflector, a second reflector, a gain medium and a pumping device;
the first reflector is a total reflector, the second reflector is a partial reflector, and laser generated by the laser is output in a split mode through the second reflector.
Furthermore, the gain medium isolation cavity is also included;
the gain medium isolation cavity isolates the space into an inner cavity and an outer cavity, the gain medium is arranged in the cavity of the gain medium isolation cavity, and the wafer seat is arranged outside the cavity of the gain medium isolation cavity.
Specifically, the second reflector is used to form a part of the gain medium isolation cavity, the mask seat is arranged in the gain medium isolation cavity,
or,
the part of the gain medium isolation cavity, which is positioned on a resonant light path of the laser, and/or the part of the gain medium isolation cavity, which is positioned on an output light path of the laser, are made of materials transparent to laser so as to facilitate the laser to pass through the gain medium resonant cavity to finish resonance or output, and the mask seat is arranged in the cavity of the gain medium isolation cavity or outside the cavity of the gain medium isolation cavity.
Specifically, the first reflector and the second reflector are plane mirrors and are parallel to each other to form a resonant cavity of the laser.
Specifically, when the mask is mounted on the mask holder and the wafer is mounted on the wafer holder, the wafer, the mask, the first reflecting mirror and the second reflecting mirror are parallel to each other two by two.
Further, the device also comprises a convex lens or a concave lens and a shutter;
the convex lens or the concave lens is arranged on an output light path of the laser, and laser output from the laser is output to the wafer through the convex lens or the concave lens so that the image of the mask on the wafer is enlarged or reduced;
the shutter is arranged on the output light path of the laser and is used for controlling the on/off of the output light path of the laser so as to control the exposure time of the wafer.
The invention provides another photoetching machine.A laser consists of a first reflector, a second reflector, a spectroscope, a gain medium and a pumping device;
the first reflecting mirror and the second reflecting mirror are all total reflecting mirrors, the beam splitter mirror is arranged on a resonant light path between the first reflecting mirror and the second reflecting mirror, light reflected between the first reflecting mirror and the second reflecting mirror is transmitted or reflected through the beam splitter mirror to form a resonant circuit, and laser generated by the laser is output through the reflection or transmission beam splitting of the beam splitter mirror.
Specifically, when the mask seat is provided with the mask and the wafer seat is provided with the wafer, the intersection line of the wafer and the spectroscope is parallel to the intersection line of the mask and the spectroscope, and the included angle between the wafer and the spectroscope is equal to the included angle between the mask and the spectroscope.
The photoetching machine has the following beneficial effects:
1. according to the photoetching machine, the mask is positioned in the resonant light path of the laser, the resonance of the laser is influenced through the mask, if a sheltering object appears on the resonant light path, the laser beam corresponding to the sheltered part cannot complete the resonance, and the mask pattern is copied to the output beam of the laser through the mechanism; when the output beam of the laser containing the mask pattern information is projected onto a wafer, the mask pattern is recovered on the wafer so as to realize photoetching imaging; performing lithographic imaging in this manner minimizes the effects of diffraction on lithography.
2. The photoetching machine provided by the invention has the advantages that the basic part is completely realized by the plane mirror, the structure is simple, the optical path is convenient to shorten, the laser beam generated by the mode has good parallelism, and the photoetching machine is greatly helpful for improving the photoetching precision. And the plane mirror is simple to manufacture and low in process cost.
3. The photoetching machine is basically realized by the plane mirror, is not influenced by the curvature radius or chromatic aberration of the convex lens or the concave lens, is favorable for improving photoetching precision, and is also favorable for realizing large exposure area and improving working efficiency.
4. The photoetching machine of the invention also provides a method for magnifying or reducing the image through the convex lens or the concave lens, thereby greatly expanding the application range of the photoetching machine.
5. The lithography machine of the invention also provides a scheme for arranging the mask into the cavity of the laser gain medium isolation cavity, which is of practical significance, especially for the situation that the mask needs to be produced in large batch, and the structure can enable the system to be super-compact.
Note that the convex lens or the concave lens is not necessarily used in the present invention. That is, if we do not use convex lens or concave lens, the cross section of the resonant cavity of our laser in the direction perpendicular to the resonance direction can be made very large, and the cross section is made very large without the problems of curvature radius or spherical aberration, chromatic aberration, etc. In particular, the laser light emerging from our laser is not a very thin beam, but rather a very thick patterned beam with patterns in a cross-section perpendicular to the direction of laser resonance.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic view of an embodiment 1 of a lithography machine according to the present invention;
FIG. 2 is a schematic view of embodiment 2 of the lithography machine of the present invention;
FIG. 3 is a schematic view of embodiment 3 of the lithography machine of the present invention;
FIG. 4 is a schematic view of embodiment 4 of the lithography machine of the present invention;
FIG. 5 is a schematic view of a lithography machine according to an embodiment 5 of the present invention.
In the figure: 11-a first reflector, 12-a second reflector, 21-a gain medium, 22-a pumping device, 2-a gain medium and a pumping component, 3-a gain medium isolation cavity, a transparent window on a 31-a gain medium isolation cavity, 4-a convex lens or a concave lens, a 5-shutter, a 6-spectroscope, a 7-mask seat and an 8-wafer seat.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1, a lithography machine according to an embodiment of the present invention includes a laser, a mask holder 7, a wafer holder 8;
the mask seat 7 is arranged on a resonant light path of the laser and used for installing a photoetching mask;
a wafer holder 8 is arranged in the output light path of the laser for mounting a photolithographic wafer.
Further, when the lithography machine is in operation, the mask is arranged on the mask holder 7, and the wafer is arranged on the wafer holder 8; the resonant light passes through the holes and the slits on the mask to complete resonance, and the output laser is projected onto the wafer to expose the wafer.
Specifically, the laser consists of a first reflector 11, a second reflector 12, a gain medium 21 and a pumping device 22;
the first reflector 11 is a total reflection mirror, the second reflector 12 is a partial reflector, and the laser generated by the laser is output in a split manner through the second reflector 12.
Further, the gain medium isolation cavity 3 is also included;
the gain medium isolation cavity 3 isolates the space into an inner cavity and an outer cavity, the gain medium is arranged in the cavity of the gain medium isolation cavity 3, and the wafer seat is arranged outside the cavity of the gain medium isolation cavity 3.
Specifically, the second reflector 12 is used to form a part of the gain medium isolation cavity 3, the mask base 7 is disposed in the cavity of the gain medium isolation cavity 3,
or,
the part of the gain medium isolation cavity 3 located on the resonant optical path of the laser and/or the part of the gain medium isolation cavity 3 located on the output optical path of the laser are made of materials transparent to laser, so that the laser can pass through the gain medium resonant cavity 3 to complete resonance or output, and the mask seat 7 is arranged in the cavity of the gain medium isolation cavity 3 or outside the cavity of the gain medium isolation cavity 3.
Specifically, the first reflecting mirror 11 and the second reflecting mirror 12 are plane mirrors and parallel to each other, and form a resonant cavity of the laser.
Specifically, when the mask is mounted on the mask holder 7 and the wafer is mounted on the wafer holder 8, the wafer, the mask, the first reflecting mirror 11, and the second reflecting mirror 12 are parallel to each other two by two.
Further, a convex lens or a concave lens 4 and a shutter 5 are also included;
a convex lens or a concave lens 4 is arranged on an output light path of the laser, and laser light output from the laser is output onto the wafer through the convex lens or the concave lens 4, so that the image of the mask on the wafer is enlarged or reduced;
a shutter 5 is arranged in the output path of the laser for controlling the on/off of the output path of the laser to control the exposure time to the wafer.
As shown in FIG. 3, in another lithography machine provided by the present invention, a laser is composed of a first reflecting mirror 11, a second reflecting mirror 12, a beam splitter 6, a gain medium 21 and a pumping device 22;
the first reflecting mirror 11 and the second reflecting mirror 12 are all total reflecting mirrors, the beam splitter 6 is arranged on a resonant optical path between the first reflecting mirror 11 and the second reflecting mirror 12, light reflected between the first reflecting mirror 11 and the second reflecting mirror 12 is transmitted or reflected by the beam splitter 6 to form a resonant loop, and laser light generated by the laser is output by the reflection or transmission of the beam splitter 6.
Specifically, when the mask is mounted on the mask holder 7 and the wafer is mounted on the wafer holder 8, the intersection line of the wafer and the spectroscope 6 is parallel to the intersection line of the mask and the spectroscope 6, and the included angle between the wafer and the spectroscope 6 is equal to the included angle between the mask and the spectroscope 6.
In another exemplary lithography machine according to the present invention, as shown in fig. 2, a mask holder 7 is located in the cavity of the gain medium isolation cavity 3.
In another embodiment of the invention, as shown in FIG. 4, the gain medium and the pump assembly 2 are located between the first mirror 11 and the second mirror 12. This embodiment is mainly applicable when the gain medium is a solid.
Referring to fig. 5, another lithography machine according to the present invention, this embodiment shows an example of implementing a resonant optical path between the first reflecting mirror 11 and the second reflecting mirror 12 by reflection of the beam splitter 6, which illustrates that the optical path of the present invention is very flexible, but it is not so different, the mask seat 7 is always located in the resonant optical path, and the resonance must be completed through the mask, which is the core idea of the present invention.
With respect to the problem of the gain medium isolation cavity, which is a cavity for isolating and confining a substance, it achieves 3-dimensional isolation, mainly for confining a fluid, especially for confining a gain medium in the form of a gas. If the mask is placed inside the gain medium isolation cavity, replacing the mask requires opening the gain medium isolation cavity, which is certainly quite inconvenient, and after replacing the mask, we also generally need to reposition the gain medium.
It should be noted that the resonance direction of the laser resonance is in the direction perpendicular to the mirror, and a beam of light cannot be significantly deviated from the original position by multiple reflections, which is a basic requirement for realizing laser.
With respect to the problem of the laser cavity, we can understand the laser cavity by a one-dimensional model, which we only need to close with two end points. An actual laser cavity is equivalent to a combination of an infinite number of one-dimensional cavities. Therefore, the laser resonator does not need to be closed at the side, and for solid, liquid, gas and other objects, the laser resonator does not form a cavity, at least the laser resonator does not form a closed cavity. Correspondingly, the laser resonant cavity can span solid, liquid, gas or vacuum as long as the unobstructed optical path is realized. This is also a fundamental prerequisite for our ability to place a photolithographic mask in the laser cavity.
With regard to the problem of total or partial reflection, it is of course not possible to achieve total reflection in a mathematical or logical sense, nor is we even used the concept of physical total reflection, which only stresses the measures that we take to try to improve the reflectivity. The corresponding partial reflection does not mean that the reflectivity is designed to be low, but rather that the reflectivity of the partial mirrors at the end points of the laser resonator is designed to be relatively high, where the partial reflection is mainly to emphasize the need to leave a little light to achieve laser output.
The specific implementation of the shutter may be various, and may be mechanical or field-effective, as long as the on/off of the optical path can be realized.
The terms mask or wafer or the like as used in the present description and claims should not be construed narrowly so that it is obvious that our lithography machine can be used to print photographs and the like, in which case the so-called mask is actually the negative film and the so-called wafer is the light-sensitive film, and so on, and when our lithography machine is applied to a variety of different application scenarios, the so-called mask or wafer corresponds to a different object, as is readily understood.
It is also obvious that it is impossible to put the wafer die on our lithography machine for lithography, and generally the surface of the material to be etched is coated with photosensitive material, and the common knowledge is well known to those skilled in the art, and has little relation with the core idea of the present invention, so that the present invention is not necessarily described in detail.
The gain medium of each embodiment is not specifically limited by the present invention, and may be specifically selected by a person skilled in the art according to design requirements.
It should be noted that the gain medium of the present invention can be any form of the prior art, including gas, liquid and solid, and the present invention is not limited to pumping, for example, electrical pumping, optical pumping, etc. can be used, and it should be noted that when optical pumping is used, the problem of contamination of the lithography by the pump light is solved.
With respect to the form of the resonant cavity, the resonant cavities given in the embodiments of the present invention are all reflective resonant cavities, which does not mean that the present invention is applicable only to reflective resonant cavities.
In the description of the present invention, details or structures that are well known to those skilled in the art have been omitted so as not to obscure the core concept of the present invention. With respect to further implementation details, such as various technologies adopted in existing lithography machines, for example, fixing, damping, transferring, aligning, etc., all the technologies adopted in existing lithography machines can be combined with the present invention to form various optimized technical solutions as long as the technologies do not conflict with the core idea of the present invention, which is a matter that is easily accomplished by those skilled in the art and is not expanded in the description of the present invention.
The present invention has been further described with reference to specific embodiments, but it should be understood that the detailed description should not be construed as limiting the spirit and scope of the present invention, and various modifications made to the above-described embodiments by those of ordinary skill in the art after reading this specification are within the scope of the present invention.
Claims (10)
1. A lithography machine is characterized by comprising a laser, a mask seat and a wafer seat;
the mask seat is arranged on a resonant light path of the laser and used for installing a photoetching mask;
the wafer seat is arranged on the output light path of the laser and is used for installing a photoetching wafer.
2. A lithography machine according to claim 1, wherein in operation of the machine, a mask is disposed on the mask holder and a wafer is disposed on the wafer holder; the resonant light passes through the holes and the slits on the mask to complete resonance, and the output laser is projected onto the wafer to expose the wafer.
3. Lithography machine according to claim 1 or 2, wherein the laser is composed of a first mirror, a second mirror, a gain medium and a pumping device;
the first reflector is a total reflector, the second reflector is a partial reflector, and laser generated by the laser is output in a split mode through the second reflector.
4. The lithography machine according to claim 3, further comprising a gain medium isolation cavity;
the gain medium isolation cavity isolates a space into an inner cavity and an outer cavity, the gain medium is arranged in the cavity of the gain medium isolation cavity, and the wafer seat is arranged outside the cavity of the gain medium isolation cavity.
5. Lithography machine according to claim 4,
forming a portion of a gain medium isolation cavity with the second mirror, the mask base being disposed within the gain medium isolation cavity,
or,
the part of the gain medium isolation cavity, which is positioned on the resonant light path of the laser, and/or the part of the gain medium isolation cavity, which is positioned on the output light path of the laser, are made of a material transparent to laser so as to facilitate the laser to pass through the gain medium resonant cavity to complete resonance or output, and the mask seat is arranged in the cavity of the gain medium isolation cavity, or the mask seat is arranged outside the cavity of the gain medium isolation cavity.
6. The lithography machine of claim 5, wherein said first mirror and said second mirror are both flat mirrors and parallel to each other, constituting a resonant cavity of said laser;
when a mask is mounted on the mask seat and a wafer is mounted on the wafer seat, the wafer, the mask, the first reflecting mirror and the second reflecting mirror are mutually parallel in pairs.
7. The lithography machine according to claim 6, further comprising a convex lens or a concave lens and a shutter;
the convex lens or the concave lens is arranged on an output light path of the laser, and laser output from the laser is output onto the wafer through the convex lens or the concave lens so as to enlarge or reduce the image of the mask on the wafer;
the shutter is arranged on the output light path of the laser and used for controlling the on/off of the output light path of the laser so as to control the exposure time of the wafer.
8. The lithography machine according to claim 1 or 2, wherein the laser is comprised of a first mirror, a second mirror, a beam splitter, a gain medium, and a pumping device;
the first reflecting mirror and the second reflecting mirror are all total reflecting mirrors, the spectroscope is arranged on a resonant light path between the first reflecting mirror and the second reflecting mirror, light reflected between the first reflecting mirror and the second reflecting mirror is transmitted or reflected through the spectroscope to form a resonant circuit, and laser generated by the laser is output through the reflection or transmission light splitting of the spectroscope.
9. A lithography machine according to claim 8,
when the mask seat is provided with a mask and the wafer seat is provided with a wafer, the intersection line of the wafer and the spectroscope is parallel to the intersection line of the mask and the spectroscope, and the included angle between the wafer and the spectroscope is equal to the included angle between the mask and the spectroscope.
10. A photolithography method comprises disposing a mask on a resonance optical path of a laser, and disposing a wafer on an output optical path of the laser; the resonance of the laser is influenced through the mask, the mask pattern is copied to the output beam of the laser, the output beam of the laser containing the mask pattern information is projected onto a wafer, and the mask pattern is recovered on the wafer to realize photoetching imaging.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910326298.8A CN110032045A (en) | 2019-04-23 | 2019-04-23 | A kind of litho machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910326298.8A CN110032045A (en) | 2019-04-23 | 2019-04-23 | A kind of litho machine |
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| Publication Number | Publication Date |
|---|---|
| CN110032045A true CN110032045A (en) | 2019-07-19 |
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Family Applications (1)
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|---|---|---|---|
| CN201910326298.8A Pending CN110032045A (en) | 2019-04-23 | 2019-04-23 | A kind of litho machine |
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| CN (1) | CN110032045A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110304837A1 (en) * | 2009-02-17 | 2011-12-15 | Carl Zeiss Smt Gmbh | Projection exposure method, projection exposure apparatus, laser radiation source and bandwidth narrowing module for a laser radiation source |
| CN104380205A (en) * | 2012-06-29 | 2015-02-25 | 卡尔蔡司Smt有限责任公司 | Projection exposure apparatus for projection lithography |
| CN105359038A (en) * | 2013-06-18 | 2016-02-24 | Asml荷兰有限公司 | Lithographic method and system |
-
2019
- 2019-04-23 CN CN201910326298.8A patent/CN110032045A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110304837A1 (en) * | 2009-02-17 | 2011-12-15 | Carl Zeiss Smt Gmbh | Projection exposure method, projection exposure apparatus, laser radiation source and bandwidth narrowing module for a laser radiation source |
| CN104380205A (en) * | 2012-06-29 | 2015-02-25 | 卡尔蔡司Smt有限责任公司 | Projection exposure apparatus for projection lithography |
| CN105359038A (en) * | 2013-06-18 | 2016-02-24 | Asml荷兰有限公司 | Lithographic method and system |
Non-Patent Citations (1)
| Title |
|---|
| 樊慧庆: "《电子信息材料》", 30 September 2012 * |
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Application publication date: 20190719 |