CN110014363A - Substrate board treatment, substrate processing method using same, the storage medium for storing program - Google Patents
Substrate board treatment, substrate processing method using same, the storage medium for storing program Download PDFInfo
- Publication number
- CN110014363A CN110014363A CN201811556240.4A CN201811556240A CN110014363A CN 110014363 A CN110014363 A CN 110014363A CN 201811556240 A CN201811556240 A CN 201811556240A CN 110014363 A CN110014363 A CN 110014363A
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- China
- Prior art keywords
- substrate
- grinding head
- face
- grinding
- stationary
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- 239000000758 substrate Substances 0.000 title claims abstract description 202
- 238000003860 storage Methods 0.000 title claims abstract description 21
- 238000003672 processing method Methods 0.000 title claims abstract description 10
- 238000000227 grinding Methods 0.000 claims abstract description 341
- 230000007246 mechanism Effects 0.000 claims abstract description 92
- 239000012530 fluid Substances 0.000 claims abstract description 88
- 230000002093 peripheral effect Effects 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 12
- 238000012545 processing Methods 0.000 claims description 9
- 230000008859 change Effects 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 81
- 238000004140 cleaning Methods 0.000 description 13
- 238000003825 pressing Methods 0.000 description 13
- 230000003028 elevating effect Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 238000001035 drying Methods 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 238000011068 loading method Methods 0.000 description 6
- 239000006061 abrasive grain Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000011010 flushing procedure Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000005299 abrasion Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- 239000013589 supplement Substances 0.000 description 4
- 230000002706 hydrostatic effect Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000003252 repetitive effect Effects 0.000 description 3
- 241000478345 Afer Species 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000004049 embossing Methods 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 241001108918 Asclepias nivea Species 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000004886 head movement Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/04—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor involving a rotary work-table
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
- B24B21/004—Machines or devices using grinding or polishing belts; Accessories therefor using abrasive rolled strips
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B21/00—Machines or devices using grinding or polishing belts; Accessories therefor
- B24B21/04—Machines or devices using grinding or polishing belts; Accessories therefor for grinding plane surfaces
- B24B21/06—Machines or devices using grinding or polishing belts; Accessories therefor for grinding plane surfaces involving members with limited contact area pressing the belt against the work, e.g. shoes sweeping across the whole area to be ground
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/0076—Other grinding machines or devices grinding machines comprising two or more grinding tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/033—Other grinding machines or devices for grinding a surface for cleaning purposes, e.g. for descaling or for grinding off flaws in the surface
- B24B27/04—Grinding machines or devices in which the grinding tool is supported on a swinging arm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
- B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/12—Lapping plates for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
- B24B37/345—Feeding, loading or unloading work specially adapted to lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
- B24B41/061—Work supports, e.g. adjustable steadies axially supporting turning workpieces, e.g. magnetically, pneumatically
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
- B24B41/067—Work supports, e.g. adjustable steadies radially supporting workpieces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
The present invention provides the more uniformly substrate board treatment of grinding base plate, substrate processing method using same and the storage medium for storing program.Substrate board treatment has: the first grinding head, which makes the first face sliding contact of the first lapping apparatus and substrate and grind first face;The diameter of second grinding head, second grinding head is smaller than first grinding head, and makes first face sliding contact of the second lapping apparatus and the substrate and grind first face;And base supporting mechanism, the base supporting mechanism accordingly pass through Fluid pressure with first grinding head and second grinding head respectively and support the substrate from the second surface side of the opposite side in first face of the substrate.
Description
Technical field
The present invention relates to substrate board treatment, substrate processing method using same, storages for making computer execute substrate board treatment
Control method program storage medium.
Background technique
In recent years, the devices such as memory circuit, logic circuit, imaging sensor (such as cmos sensor) just become Geng Gaoji
Cheng Hua.In the process for forming these devices, the foreign matters such as particulate, dust are attached to device sometimes.It is attached to the foreign matter of device
Can cause wiring between short circuit, circuit failure.Therefore, it in order to improve the reliability of device, needs to being formed with device
Chip is cleaned, and foreign matter on chip is removed.
Also adhere to the foreign matters such as particulate, dust as described above sometimes at the back side (non-device face) of chip.When in this way
Foreign matter when being attached to the back side of chip, chip leaves from the stage fiducial face of exposure device or wafer surface is relative to stylobate
Quasi- face inclination, as a result, generating the offset of the offset of pattern, focal length.Such problems in order to prevent is needed in chip
Surface (device side) is coated with after resist and before exposure process, removes the foreign matter for being attached to the back side of chip.
Recently, in addition to optical profile type exposure technique, it also developed the patterning device using nanometer embossing.The nanometer
Stamping technique is to be transferred wiring pattern and pressing the pressing mold of pattern formation to the resin material for being coated on chip
Technology.In nanometer embossing, in order to avoid the transfer of the dirt between pressing mold and chip and between chip and chip,
Need to remove the foreign matter on the surface for being present in chip.
A kind of substrate board treatment is disclosed in Japanese Unexamined Patent Publication 2013-172019 bulletin (patent document 1), makes crystalline substance on one side
Piece rotation, makes the washer for having abrasive grain, lapping tape etc. and chip sliding contact on one side, to remove the surface for being attached to chip
And/or the foreign matter at the back side.
Existing technical literature
Patent document
Patent document 1: Japanese Unexamined Patent Publication 2013-172019 bulletin
Summary of the invention
Problems to be solved by the invention
However, when only with biggish grinding head grinding base plate, it is possible to insufficient in the grinding that substrate generates part.Example
Such as, compared with the central portion of substrate, the time that the peripheral part of substrate is contacted with the lapping apparatus of grinding head is shorter, there is the change of grinding rate
Low tendency.The deviation of such grinding rate reduces the inner evenness of substrate, it is possible to have an impact to exposure process.This
The purpose of invention is at least part solved the problem above-mentioned.
The means used to solve the problem
A side view of the invention is related to a kind of substrate board treatment, has: the first grinding head, which makes first
First face sliding contact of lapping apparatus and substrate and grind first face;Second grinding head, the diameter of second grinding head
Diameter than first grinding head is small, and makes first face sliding contact of the second lapping apparatus and the substrate and grind
First face;And base supporting mechanism, the base supporting mechanism are ground with first grinding head and described second respectively
Head accordingly supports the substrate from the second surface side of the opposite side in first face of the substrate by Fluid pressure.
A side view of the invention is related to a kind of substrate board treatment, has: substrate holding mechanism, which protects
It holds substrate and rotates the substrate, and have the multiple rollers that can be contacted with the peripheral part of the substrate, each roller is configured to
It is enough to be rotated centered on its axle center;First grinding head, first grinding head make the first face of the first lapping apparatus Yu the substrate
Sliding contact and grind first face;And second grinding head, the diameter of second grinding head is than first grinding head
Diameter is small, and makes the first face sliding contact of the second lapping apparatus and substrate and grind first face.
Detailed description of the invention
Fig. 1 is the top view for having the base plate processing system of substrate board treatment of an embodiment.
Fig. 2A is the schematic plan for indicating the structure of grinding head of grinding unit.
Fig. 2 B is the schematic plan for indicating the structure of grinding head of grinding unit.
Fig. 3 is the schematic side elevation of the grinding unit of first embodiment.
Fig. 4 A is the structural example of stationary. platen.
Fig. 4 B is the structural example of stationary. platen.
Fig. 4 C is the structural example of stationary. platen.
Fig. 5 A is the example of the plan view shape of stationary. platen.
Fig. 5 B is the example of the plan view shape of stationary. platen.
Fig. 6 A is the schematic side elevation of the grinding unit of second embodiment.
Fig. 6 B is the schematic plan of the grinding unit of second embodiment.
Fig. 7 indicates the structural example of the mobile mechanism of stationary. platen.
Fig. 8 is the schematic side elevation of the grinding unit of third embodiment.
Fig. 9 is the schematic side elevation of the grinding unit of the 4th embodiment.
Figure 10 A is the structural example of the fluid ejiction opening of stationary. platen.
Figure 10 B is the structural example of the fluid ejiction opening of stationary. platen.
Figure 11 is an example of the substrate holding mechanism of grinding unit.
Figure 12 is an example of the substrate holding mechanism of grinding unit.
Figure 13 is other examples of grinding unit.
Figure 14 is other examples of grinding unit.
Symbol description
1 base plate processing system
2 handling parts
Loading part before 3
4 conveying mechanical arms
5 wafer stations
6 conveying mechanical arms
7 wafer stations
8 grinding units
9 grinding units
10 conveying mechanical arms
11 cleaning units
12 conveying mechanical arms
13 drying units
14 control devices
21 grinding heads
22 swing arms
23 grinding heads
24 swing arms
31 stationary. platens
32 bearing surfaces
33 stationary. platens
34 bearing surfaces
41 fluids
31a fluid supplies road
31b groove
31c fluid ejiction opening
32c fluid ejiction opening
35 motors
36 ball screw frameworks
50 stationary. platens
51 bearing surfaces
53 fluid supply lines
54 fluid supply lines
55 flow control valves
56 flow control valves
Specific embodiment
(first embodiment)
Fig. 1 is the top view for having the base plate processing system of substrate board treatment of an embodiment.Base plate processing system 1
Have: handling part 2, the handling part 2 have preceding loading part 3;As the first grinding unit 8 of substrate board treatment and the second grinding
Unit 9;Cleaning unit 11;Drying unit 13;And control device 14.Also, being provided in handling part 2 can be along preceding loading
The first mobile conveying mechanical arm 4 of the orientation in portion 3.Also, second conveyor tool hand 6, the first wafer station 5 and the second chip
Platform 7 is disposed adjacently with the first grinding unit 8 and the second grinding unit 9.Also, third conveying mechanical arm 10 and cleaning unit 11
It is adjacent and be arranged, the 4th conveying mechanical arm 12 is provided between cleaning unit 11 and drying unit 13.
Preceding loading part 3 is configured to load one or more wafer case for storing multiple chips.Wafer case is for example
Open type box, SMIF (Standard Manufacturing Interface: standard mechanical interface) box, FOUP (Front
Opening Unified Pod: front-open wafer feeder).First conveying mechanical arm 4 loading part 3 before being equipped on by chip
Wafer case take out, and be placed in wafer station 5.
Wafer station 5 has reverse engine (not shown), keeps the surface of the chip loaded by the first conveying mechanical arm 4 and the back side anti-
Turn.Second conveyor tool hand 6 takes out the chip (face-down state) after reversion from wafer station 5, to grinding unit 8 or grinds
Mill unit 9 is moved in.Grinding unit 8 and grinding unit 9 have as aftermentioned: substrate holding mechanism, which protects
It holds chip and makes its rotation;And grinding head, the grinding head are equipped with lapping apparatus.Grinding unit 8 and grinding unit 9 are so-called
Backgrinding apparatus makes afer rotates by substrate holding mechanism on one side, passes through the lapping apparatus grinding wafers of grinding head on one side
The back side (upward).Herein, the case where being backgrinding apparatus to grinding unit 8 and grinding unit 9, is illustrated.From
After the chip that wafer case is taken out carries out grinding back surface processing in any one grinding unit, is cleaned, is dried, is back to
Wafer case.It in other implementations, can also be using the grinding unit of a side as backgrinding apparatus, by grinding for another party
Unit is ground as bevel ground device or the device of grinding wafers outer region.In this case, in the grinding list of a side
Member has carried out after the chip of milled processed being cleaned after the grinding unit of another party has carried out milled processed, being dry.
Also, second conveyor tool hand 6 will treated that chip is placed in chip in grinding unit 8 or grinding unit 9
Platform 7.Third conveying mechanical arm 10 takes out the chip after milled processed from wafer station 7, moves in cleaning unit 11.Cleaning unit
Chip after 11 pairs of milled processeds starts the cleaning processing.In one embodiment, cleaning unit 11 has in a manner of holding chip
Cleaning solution is supplied to the two sides of chip on one side, is cleaned on one side with these sponges by the upper side roller sponge and lower side roller sponge of configuration
The two sides of chip.
4th conveying mechanical arm 12 takes out the chip after being cleaned with cleaning unit 11, moves in drying unit 13.It is dry
Chip after 13 pairs of unit cleanings is dried.In one embodiment, drying unit 13 is by making chip around its axle center with high speed
It rotates and dries afer rotates.Later, the chip after drying is taken out by the first conveying mechanical arm 4, is back to wafer case.
Control device 14 controls the movement of each section of above-mentioned base plate processing system 1.Control device 14 includes
Memory, the various setting data of the memory storage and various programs;And CPU, the CPU execute the program of memory.It constitutes
The storage medium of memory can include volatile storage medium and/or non-volatile storage medium.Storage medium energy
It is enough including, for example, 1 of the arbitrary storage medium such as ROM, RAM, hard disk, CD-ROM, DVD-ROM, floppy disk or multiple.Storage
Program stored by device includes for example, controlling the milled processed of the program of the conveying of each conveying mechanical arm, each grinding unit of control
Program, control cleaning unit cleaning treatment program, control drying unit drying process program.Also, control dress
14 are set to be configured to, it can be with the upper control (not shown) that is integrally controlled base plate processing system 1 and other associated apparatus
Device communication processed, can carry out the exchange of data between database possessed by host controller.
Fig. 2A, Fig. 2 B are the schematic plans for indicating the structure of grinding head of grinding unit.Fig. 2A indicates grinding head position
In the retreating position the case where.Fig. 2 B indicates the case where grinding head is located at abrasion site.The grinding unit of present embodiment has more
A grinding head.Hereinafter, as an example, the case where having 2 grinding heads 21,23 to grinding unit, is illustrated, and can also have 3
A above grinding head.In addition, the illustration is omitted in Fig. 2A, 2B, but it is equipped in each grinding unit and supplies flushing liquor to wafer W
The flushing liquor supply nozzle (referring to Fig.1 2) given.
Grinding head 21 has the diameter bigger than the radius of wafer W.In the bottom surface (side abutted with chip) of grinding head 21
1 as lapping apparatus or multiple lapping tapes are installed.For example, being radially configured with 3 in the bottom surface of grinding head 21
Lapping tape.The both ends of lapping tape are held in 2 spools (not shown) configured in grinding head 21, extend between 2 spools
The lower surface of lapping tape can be with the face contact of chip.In addition, being able to use the pad comprising abrasive grain as lapping apparatus, consolidating
Determine other lapping apparatus such as abrasive grain.Grinding head 21 is rotatably held in one end of swing arm 22.Grinding head 21 is by being set to
The head rotating mechanism (not shown) of the one end of swing arm 22 and rotate.The other end of swing arm 22 and swinging axle (not shown) connect
It connects, when swinging axle is rotated by the rotation of axis rotating mechanism (not shown), swing arm 22 is swung (for example, from the shape of Fig. 2A
State to Fig. 2 B state, or in turn).By the swing of swing arm 22, grinding head 21 is in retreating position (Fig. 2A) and grinding
It is swung between position (Fig. 2 B).Also, be linked with elevating mechanism (not shown) in swinging axle, grinding head 21 by elevating mechanism come
Lifting.
Grinding head 23 has the diameter smaller than the diameter of grinding head 21.In bottom surface (one abutted with chip of grinding head 23
Side) 1 or multiple lapping tapes as lapping apparatus are installed.For example, being radially configured with 3 in the bottom surface of grinding head 23
A lapping tape.The both ends of lapping tape are held in 2 spools (not shown) configured in grinding head 23, prolong between 2 spools
It the lower surface for the lapping tape stretched can be with the face contact of chip.In addition, being also able to use as lapping apparatus comprising abrasive grain
The others lapping apparatus such as pad, fixed abrasive grain.Grinding head 23 is rotatably held in one end of swing arm 24.Grinding head 23 passes through
Set on the one end of swing arm 24 head rotating mechanism (not shown) and rotate.The other end of swing arm 24 and swing (not shown)
Axis connection, when swinging axle is rotated by the rotation of axis rotating mechanism (not shown), swing arm 24 is swung.Pass through swing arm 24
Swing, grinding head 23 swings between retreating position (Fig. 2A) and abrasion site (Fig. 2 B) (for example, from the state of Fig. 2A to figure
The state of 2B, or in turn).Also, it is linked with elevating mechanism (not shown) in swinging axle, grinding head 23 passes through elevating mechanism
Lifting.Wafer W is kept and is rotated by substrate holding mechanism.Substrate holding mechanism has the outer peripheral edge for being for example configured at wafer W
Multiple roller 2-11 (Fig. 2A, Fig. 2 B, Figure 12), in the state of with these multiple roller 2-11 holding chip W, by making each roller 2-11
(rotation) is rotated around its axle center, each roller 2-11 injustice transfers to rotate wafer W.Also, as shown in figure 11, substrate holding mechanism
It is also possible to the structure for having chuck 1-11, chuck 1-11 revolve by holding chip W rotating wafer W.Respectively grind
The direction of rotation of bistrique 21,23 both can be identical as the direction of rotation of wafer W as shown in Figure 2 B, is also possible to the rotation with wafer W
Turn the different direction in direction.Also, the direction of rotation of each grinding head 21,23 can also be different from each other.
Also, the abradant surface that lapping liquid or pure water are supplied to wafer W by not shown nozzle (is in present embodiment
The back side).
In addition to the grinding head 21 of opposite major diameter, also using grinding head 23 of opposite path the reasons why it is as follows.In the outer of wafer W
The time of contact of circumference, grinding head 21 is shorter, and grinding rate is opposite to be lower.Therefore, in the peripheral part of wafer W, by the grinding of path
First 23 pairs of wafer Ws carry out supplement grinding.While being ground by grinding head 21, alternatively, after being ground by grinding head 21,
Additional grinding is carried out by peripheral part of the grinding head 23 to wafer W, it is uniform so as to approach the amount of grinding at the back side of wafer W.
As a result, it is possible to improve the inner evenness at the back side of the wafer W after milled processed.
Fig. 3 is the schematic side elevation of the grinding unit of first embodiment.The diagram of substrate holding mechanism is omitted herein.
In grinding unit 8,9, grinding head 21,23 above-mentioned is abutted with the back side of wafer W and the back side S1 of grinding wafers.At this point, due to
With grinding head 21,23 by wafer W from back side S1 to surface S2 (for from the top to the bottom in the example) pressing, therefore by substrate branch
Hold surface S2 side bearing wafer W of the mechanism (hydrostatic support mechanism) 30 from the side opposite with grinding head.In other words, by static pressure branch
The supporting force that mechanism 30 applies the power at the back side for overcoming grinding head 21,23 to press wafer W from the surface of chip is held, so as to press down
Wafer W flexure processed.
Hydrostatic support mechanism 30 has stationary. platen 31 and stationary. platen 33.Stationary. platen 31 is arranged in correspondence with grinding head 21.It is quiet
It is more slightly larger than the diameter of grinding head 21 that pressing plate 31 is formed as diameter, when overlook view, constitutes and is configured to comprising grinding head 21
Entirety.Stationary. platen 31 has bearing surface 32 in the side in face of wafer W, and is configured to the surface in bearing surface 32 and wafer W
Between have a little gap.Aftermentioned fluid supply road, fluid (liquid or gas, such as pure water) are formed in stationary. platen 31
It is supplied to bearing surface 32 via fluid supply road, so that the surface of wafer W be made to be supported in a non-contact manner by fluid.
Stationary. platen 33 is arranged in correspondence with grinding head 23.It is bigger than the diameter of grinding head 23 that stationary. platen 33 is formed as diameter, bows
When depending on observation, constitutes and be configured to the entirety comprising grinding head 23.Stationary. platen 33 has bearing in the side in face of wafer W
Face 34, and it is configured to that there is a little gap between bearing surface 34 and the surface of wafer W.Aftermentioned stream is formed in stationary. platen 33
Body supplies road, and fluid (liquid or gas, such as pure water) is supplied to bearing surface 34 via fluid supply road, to make chip
The surface of W is supported in a non-contact manner by fluid.
The structural example of Fig. 4 A to Fig. 4 C expression stationary. platen.The diagram of substrate holding mechanism is omitted herein.Also, this sentences quiet
It is illustrated for pressing plate 31, but the also structure having the same of stationary. platen 33.But stationary. platen 31 and stationary. platen 33 can also have
There is different types of structure.For example, stationary. platen 31 is the structure of Fig. 4 A, stationary. platen 33 is also possible to the structure of Fig. 4 B.Also, it is quiet
Pressing plate 31 and stationary. platen 33 can also have the structure other than Fig. 4 to Fig. 4 C.
In the example shown in Fig. 4 A, stationary. platen 31 has for importing pressurized fluid (pressure fluid) i.e. fluid 41
Fluid supply road 31a.Fluid supplies road 31a and groove (recess portion) 31b of fluid 41 is kept to link.It is applied to by grinding head 21
The load of the back side S1 of substrate W spills into the stream of the bearing surface 32 of stationary. platen 31 by the fluid 41 in groove 31b and from groove 31b
Body is born.In the example shown in Fig. 4 B, the fluid 41 imported from fluid supply road 31a diffuses to entire bearing surface 32, bears
The load at the back side of substrate W is applied to by grinding head 21.In the example shown in Fig. 4 C, in the formation of bearing surface 32 of stationary. platen 31
There are multiple through-hole 31c, fluid 41 supplies road 31a from fluid by these through-holes 31c and is supplied to bearing surface 32.By being supplied to bearing
The fluid 41 in face 32 bears the load that the back side S1 of substrate W is applied to by grinding head 21.Reference is also shown in Fig. 4 A to Fig. 4 C
Multiple roller 2-11 (Fig. 2A, Fig. 2 B, Figure 12) as above-mentioned substrate holding mechanism of Fig. 2A, 2B narration.Multiple with these
In the state of roller 2-11 holding chip W, by making each roller 2-11 rotate (rotation) around its axle center, each roller 2-11 is without revolution
And rotate wafer W.Also, as shown in figure 11, substrate holding mechanism is also possible to the structure for having chuck 1-11, chuck 1-
11 pass through holding chip W and revolving rotates wafer W.
Fig. 5 A, Fig. 5 B are the examples of the plan view shape of stationary. platen.In the example of Fig. 5 A, stationary. platen 31,33 be respectively provided with
The concentric circular shape of grinding head 21,23.The diameter of stationary. platen 31,33 is respectively formed as the diameter phase with grinding head 21,23
Deng or it is slightly larger.In the example of Fig. 5 B, the diameter of stationary. platen 31,33 is respectively structured as the circle bigger than the diameter of grinding head 21,23
A part of shape or ellipse.Also, in Fig. 5 A, Fig. 5 B, the part adjacent with the periphery of wafer W of stationary. platen 31,33
Not generate the shape of interference with the substrate holding mechanism (for example, chuck 1-11 of Figure 11) of wafer W is kept.In addition, using
In the case where rotating such substrate holding mechanism (for example, roller 2-11 of Fig. 5 A, Fig. 5 B, Figure 12) not together with wafer W, static pressure
Even if plate 31,33 is Chong Die with the periphery of wafer W, the outside of periphery is also extended to.
(second embodiment)
Fig. 6 A is the schematic side elevation of the grinding unit of second embodiment.Fig. 6 B is the grinding list of second embodiment
The schematic plan of member.The diagram of substrate holding mechanism is omitted herein.Grinding of the grinding unit of present embodiment in path
First 23 aspects being ground while swinging are different from the grinding unit of first embodiment.Other structures and the
One embodiment is identical, therefore the repetitive description thereof will be omitted.
As described above, forming the swing of grinding head 23 and rotating swing arm 24 around swinging axle.Also, stationary. platen
33 follow the swing of grinding head 23.That is, when overlook view, stationary. platen 33 is always comprising grinding with the movement of grinding head 23
First 23 mode is mobile.
Fig. 7 indicates the structural example of the mobile mechanism of stationary. platen.The diagram of substrate holding mechanism is omitted herein.In the example,
Stationary. platen 33 and ball screw framework 36 link, and drive ball screw framework 36 with motor 35.Ball screw framework 36 is by motor
35 rotary motion is converted to straight trip movement, moves back and forth stationary. platen 33.In addition, the mobile mechanism as stationary. platen,
It is not limited to the structure of motor and ball screw framework, rack and pinion mechanism, cylinder, solenoid etc. is able to use and arbitrarily drives
Mechanism.In addition, grinding head 23 relative to arc-shaped is swung, and since stationary. platen 33 moves along a straight line, preferred stationary. platen
33 are formed as that diameter is bigger than the diameter of grinding head 23, include the region of grinding head 23 can make stationary. platen 33 always.
(third embodiment)
Fig. 8 is the schematic side elevation of the grinding unit of third embodiment.The diagram of substrate holding mechanism is omitted herein.
For the grinding unit of present embodiment in the stationary. platen 33 for omitting path, the stationary. platen 31 of major diameter is configured to moveable aspect and the
The grinding unit of one embodiment is different.Other structures are identical with first embodiment, therefore the repetitive description thereof will be omitted.
In present embodiment, stationary. platen 31 can be in and the corresponding position of grinding head 21 and position corresponding with grinding head 23
Between move.As aforementioned, stationary. platen 31 is configured at position corresponding with grinding head 21, overlook view comprising grinding
First 21.Also, stationary. platen 31 is configured at position corresponding with grinding head 23, overlook view comprising grinding head 23.According to grinding
The size relationship of bistrique 21 and grinding head 23, stationary. platen 31 corresponding with the grinding head 21 of major diameter are more much larger than grinding head 23.?
In second embodiment, the mobile mechanism of grinding head 23 can using with as the moving machine for moving back and forth stationary. platen 33
Structure and the identical mobile mechanism of structure being illustrated.I.e. it is capable to use motor and ball screw framework, rack tooth
Take turns mechanism, cylinder, the arbitrary driving mechanism such as solenoid.In present embodiment, after being ground by grinding head 21, execute
The milled processed of grinding head 23.Alternatively, can also be carried out with opposite to that sequence.It is ground by grinding head 21
When, stationary. platen 31 is set to position (opposite position) corresponding with grinding head 21.21 band of grinding head is born with stationary. platen 31
The load come, and execute the milled processed carried out by grinding head 21.Also, when being ground by grinding head 23, by
Mobile mechanism makes stationary. platen 31 be moved to position (opposite position) corresponding with grinding head 23.Grinding head is born with stationary. platen 31
23 bring loads, and execute the milled processed carried out by grinding head 23.
(the 4th embodiment)
Fig. 9 is the schematic side elevation of the grinding unit of the 4th embodiment.Figure 10 A, Figure 10 B are the vertical views of stationary. platen
Figure.The diagram of substrate holding mechanism is omitted herein.In present embodiment, in the stationary. platen 50 shared to 2 grinding head settings
Aspect is different from the first embodiment.Other structures are identical with first embodiment, therefore the repetitive description thereof will be omitted.
Stationary. platen 50 and 2 fluid supply lines 53,54 are connect, and are equipped with flow control in each fluid supply lines 53,54
Valve 55,56.Flow control valve 55,56 controls flow by carrying out the signal of self-control device 14.Also, fluid supply lines 53,
54 connect with fluid feed sources 57, receive the supply of pressure fluid (liquid or gas) from fluid feed sources 57.Liquid is example
Such as DIW (pure water).
As shown in Figure 10 A, it in the bearing surface 51 of stationary. platen 50, is formed in region corresponding with grinding head 21 multiple logical
Perhaps fluid ejiction opening 31c is formed with multiple through-holes in region corresponding with grinding head 23 or fluid ejiction opening 32c (joins in hole
According to Fig. 4 C).Multiple fluid ejiction opening 31c are connected to fluid supply lines 53.Multiple fluid ejiction opening 32c and fluid supply lines
54 connections.By bearing grinding head 21 from fluid supply lines 53 by the fluid that fluid ejiction opening 31c is supplied to bearing surface 51
Bring load, by bearing grinding from fluid supply lines 54 by the fluid that fluid ejiction opening 32c is supplied to bearing surface 51
First 23 bring load.It, can also be by flow control valve in the case where a side of grinding head 21 or grinding head 23 is used only
55 or 56 blockings are corresponding with the grinding head not used to be supplied to the fluid of stationary. platen.Alternatively, it is also possible to replace flow control
Valve 55,56 uses open and close valve.
As shown in Figure 10 B, in the case where swinging the grinding head 23 of path, fluid ejiction opening 32c can also be formed
For multiple regions A1, A2, A3, the fluid ejiction opening in each region (is omitted with fluid supply lines 54A1,54A2,54A3 respectively
Diagram) connection, the control valve for being set to each fluid supply lines is controlled, fluid is in turn supplied to the stream of each region A1, A2, A3
Body ejiction opening 32c.Also, fluid can also be supplied to the stream of region-wide A1, A2, A3 (movable range of grinding head 23) simultaneously
Body ejiction opening 32c covers whole hunting ranges of grinding head 23.
Figure 11 is an example of the substrate holding mechanism of grinding unit.Herein, in order to avoid the complication of attached drawing, 1 is only shown
A grinding head and stationary. platen, but in fact, it is configured with multiple grinding heads and stationary. platen as described above.Each grinding head and each static pressure
Avoid shape as each chuck 1-11 in the outer peripheral edge side that plate is formed as the chip in abrasion site.In the example, with configuration
Multiple chuck 1-11 in the outer peripheral edge of wafer W come the outer peripheral edge of clamped wafer W, to keep wafer W.Each chuck 1-11 is fixed
In the rotation base station 1-16 of cylindric substrate rotating mechanism 1-10.Base station 1-16 is rotated to revolve via angular contact ball bearing 20,20
Turn to be supported on stationary parts 1-14 freely.The rotor of hollow motor 1-12 is fixed on rotation base station 1-16, and stator is fixed on quiet
Stop part 1-14.When hollow motor 1-12 rotation when, rotation base station 16 relative to stationary parts 1-14 rotate, each chuck 1-11 with
Keep the state rotation of wafer W.At this point, each chuck 1-11 revolves around the center of wafer W.In addition, each chuck 1-11 is configured to
Risen by elevating mechanism 1-30, thus releasing wafer W.In Figure 11, grinding head 1-50 has the lapping tape as lapping apparatus
1-61.Grinding head 1-50 links via one end of axis 1-51 and swing arm 1-53, and the other end of swing arm 1-53 is fixed on swing
Axis 1-54.Swinging axle 1-54 and axis rotating mechanism 1-55 links.When driving swinging axle 1-54 by the axis rotating mechanism 1-55, grind
Bistrique 1-50 is moved between retreating position (Fig. 2A) and abrasion site (Fig. 2 B).Also being linked in swinging axle 1-54 makes grinding head
The elevating mechanism 1-56 that 1-50 is moved along the vertical direction.Elevating mechanism 1-56 makes grinding head via swinging axle 1-54 and axis 1-51
1-50 lifting.Grinding head 1-50 is dropped to by elevating mechanism 1-56 to be contacted with the upper surface of wafer W.As elevating mechanism 1-56,
Cylinder or servo motor and the combination of ball-screw etc. can be used.Hydrostatic support mechanism 1-90 has knot as described above
The stationary. platen 1-91 of structure, stationary. platen 1-91 are gone up and down by elevating mechanism 1-98, are rotated by rotating mechanism 1-99.In addition, should using
In the case where the substrate holding mechanism of structure, grinding head, stationary. platen need the chuck 1- to revolve in selection and milled processed
11 do not generate the shape or configuration of interference.
Figure 12 is an example of the substrate holding mechanism of grinding unit.In the example, more with the outer peripheral edge for being configured at wafer W
In the state of a roller 2-11 holding chip W, each roller 2-11 rotates (rotation) around its axle center, so that each roller 2-11 is without revolution
And rotate wafer W.In figure, 2-1 is the back side of wafer W, and 2-2 is the surface of wafer W.Substrate holding mechanism 2-10 has: more
A roller 2-11, multiple roller 2-11 can be contacted with the outer peripheral edge of wafer W;And roller rotating mechanism 2-12, the roller rotating mechanism
2-12 rotates these rollers 2-11 centered on respective axle center.In an example, be equipped with 4 rollers, but also can be set 3 with
Under, 5 or more rollers.In one embodiment, roller rotating mechanism 2-12 has motor, band, belt wheel etc..Roller rotating mechanism 2-12 makes
Multiple roller 2-11 are rotated in identical direction with identical speed.In the grinding of wafer W, the outer peripheral edge of wafer W is by multiple roller 2-
11 seize on both sides by the arms.Wafer W is horizontally kept, and wafer W is rotated centered on its axle center by the rotation of roller 2-11.Grinding head assembling
Body 2-49 has grinding head 2-50.Grinding head 2-50 and swing arm above-mentioned (illustration omitted) link.Grinding head 2-50 with putting
The head axis 2-51 connection of swing arm installation.This axis 2-51 and head rotating mechanism 2-58 links, this rotating mechanism 2-58 makes to grind
Head 2-50 is rotated centered on its axle center.Grinding head 2- is applied to as by downward load in addition, being linked in head axis 2-51
The cylinder 2-57 of 50 loading device.Grinding head 2-50 has the more of the lapping apparatus as the face for grinding wafers W
A lapping tape 2-61 etc..In one embodiment, head rotating mechanism 2-58 has the structures such as motor, band, belt wheel.Stationary. platen 2-90 tool
Standby: multiple fluid injection mouth 2-94, multiple fluid injection mouth 2-94 are formed in bearing surface 2-91;And fluid supplies road 2-
92, fluid supply road 2-92 is connect with fluid injection mouth 2-94.Fluid supplies road 2-92 and fluid feed sources (not shown) connect
It connects.Also, it is equipped with flushing liquor supply nozzle 2-27, flushing liquor is supplied to the center of wafer W by flushing liquor supply nozzle 2-27, is rushed
Washing lotion is spread in wafer face by the centrifugal force of the wafer W of rotation.In addition, in Figure 12,1 grinding head is shown, but picture
It is above-mentioned to be equipped with 2 (more than or) grinding heads like that.
Using the structure substrate holding mechanism in the case where, as long as preset grinding head, stationary. platen shape or
Person's configuration is to avoid multiple roller 2-11 positioned at fixed position, in the rotation of wafer W, grinding head, stationary. platen just not with card
Disk (roller) generates interference.Therefore, grinding head, stationary. platen can be configured to reach the outer peripheral edge of wafer W, alternatively, being more than wafer W
Outer peripheral edge extends on the outside of radial direction.
Figure 13, Figure 14 are other examples of grinding unit.In the example, wafer W surface configuration in upside, the back side is matched
It being placed in the state of downside, the grinding head 3-14 for having lapping tape 3-22 grinds the peripheral part at the back side of wafer W, and
It is mobile by grinding head moving mechanism 3-35, (Figure 14) is ground to the entire periphery side region of the rake comprising chip.It should
In example, substrate holding mechanism 3-12 is by keeping the Substrate table 3-17 of wafer W by vacuum suction and rotating Substrate table 3-17
Motor 3-19 is constituted.Grinding head 3-14 has: multiple rollers, and multiple roller keeps the lapping tape 3-22 as lapping apparatus;Pressing
Component 3-24, pressing component 3-24 press lapping tape 3-22 to the back side of wafer W;And cylinder 3-25, cylinder 3-25
As the actuator that pressing force is applied to pressing component 3-24.Lapping tape 3-22 is with defined speed from extraction spool via grinding
Bistrique 3-14 is transmitted to spool is involved in.Grinding head 3-14 and grinding head moving mechanism 3-35 connection.Grinding head moving mechanism 3-
35 are configured to make grinding head 3-14 to movement on the outside of the radial direction of wafer W.Head moving mechanism 3-35 is ground by such as ball wire
The combination of thick stick and servo motor is constituted.Configured with lapping liquid is (pure above and below the wafer W for being held in Substrate table 3-17
Water) it is supplied to the liquid supply nozzle of wafer W.In such a configuration, by the way that above-mentioned stationary. platen 31 or 33 to be configured at
The peripheral part (position corresponding with the grinding head 3-14 of Figure 13) on the surface of wafer W, is able to suppress the flexure of wafer W.In the example,
Stationary. platen 31 or 33 is configured at the top of wafer W.Alternatively, it is also possible to replace the upper of grinding head 3-14 and stationary. platen 31 or 33
Under.That is, grinding head 3-14 can also be configured to the top of wafer W, stationary. platen 31 or 33 is configured to the lower section of wafer W.
Technical idea below is at least held from above embodiment.
According to mode 1, provide a kind of substrate board treatment, have: the first grinding head, first grinding head make the first grinding
First face sliding contact of utensil and substrate and grind first face;The diameter of second grinding head, second grinding head compares institute
It states that the first grinding head is small, and makes first face sliding contact of the second lapping apparatus and the substrate and grind described first
Face;And base supporting mechanism, the base supporting mechanism respectively with first grinding head and second grinding head accordingly
The substrate is supported from the second surface side of the opposite side in first face of the substrate by Fluid pressure.
It according to which, can be ground by entire first face of first grinding head to substrate, and can be by diameter
The lesser second grinding head part low to the grinding rate in the first face of substrate carries out supplement grinding, therefore can equably grind
Substrate.Also, due to respectively with the first grinding head and the second grinding head accordingly from the second surface side supporting substrates of substrate,
Can according to the first grinding head and the second grinding head bring pressing force in appropriate range from opposite side supporting substrates.Cause
This is able to suppress other than region corresponding with the first grinding head and the second grinding head and applies unwanted supporting force to substrate.
Further, it is possible to reduce the usage amount of fluid.
According to mode 2, in the substrate board treatment of mode 1, the base supporting mechanism includes the first stationary. platen, should
First stationary. platen is corresponding with first grinding head and supports the substrate;And second stationary. platen, second stationary. platen and institute
It states the second grinding head correspondence and supports the substrate.
According to which, due to by the first stationary. platen and the second stationary. platen respectively with the first grinding head and the second grinding head pair
It is arranged with answering, therefore can be by simple structure, according to the first grinding head and the second grinding head bring pressing force appropriate
In the range of from opposite side supporting substrates.
According to mode 3, in the substrate board treatment of mode 2, second grinding head is swung on one side in milled processed
The substrate is ground on one side, and second stationary. platen is configured to follow the second grinding head movement.For example, substrate board treatment
Can also have: the second arm, second arm are configured to move second grinding head;Mobile mechanism, the mobile mechanism are set to institute
Base supporting mechanism is stated, and is configured to move second stationary. platen;And control device, the control device is to second arm
It is controlled such that second stationary. platen follows second grinding head with the mobile mechanism.
It can be in the lower portion of grinding rate of substrate by swinging lesser second grinding head of diameter according to which
Divide and further increases grinding rate.As a result, it is possible to shorten milling time.Also, since the second stationary. platen follows the second grinding head
And it moves, therefore bearing appropriate can be carried out by region of second stationary. platen to the substrate pressed by the second grinding head.
According to mode 4, in the substrate board treatment of mode 1, the base supporting mechanism has stationary. platen, the stationary. platen
It is configured to move between the corresponding region of first grinding head and region corresponding with second grinding head.Example
Such as, the base supporting mechanism can include stationary. platen;And mobile mechanism, the mobile mechanism are configured to described first
The mobile stationary. platen between the corresponding region of grinding head and region corresponding with second grinding head.
According to which, be able to use shared stationary. platen, realize bearing to substrate corresponding with the first grinding head and
Bearing to substrate corresponding with the second grinding head.
According to mode 5, in the substrate board treatment of mode 1, the base supporting mechanism includes stationary. platen, the static pressure
Plate is corresponding with first grinding head and second grinding head and supports the substrate;First fluid route, the first fluid
Route supplies fluid to the region corresponding with first grinding head of the stationary. platen;And second fluid route, this
Two fluid lines supply fluid to the region corresponding with second grinding head of the stationary. platen.
According to which, by fluid respectively from first fluid route and second fluid and not moving shared stationary. platen
Route is supplied to region corresponding with the first grinding head and the second grinding head, can realize in appropriate range and grind to first
The bearing of the corresponding substrate of bistrique and bearing to substrate corresponding with the second grinding head.
According to mode 6, in the substrate board treatment of mode 5, second grinding head is swung on one side in milled processed
The substrate is ground on one side, and the stationary. platen is configured to, and can follow second grinding head and supply the fluid to change
Position onto second face of the substrate.For example, substrate board treatment can also have: the second arm, the second arm structure
As movement second grinding head;Multiple second fluid routes, multiple second fluid route are set to the substrate supporting machine
Structure is connect with multiple positions in the moving range of second grinding head in the stationary. platen;And control device, the control
Device processed is controlled by the flow of the fluid of opposite each second fluid route supply, follows second grinding head
Change the position fluid being supplied in the stationary. platen.
It can be in the lower portion of grinding rate of substrate by swinging lesser second grinding head of diameter according to which
Divide and further increases grinding rate.As a result, it is possible to shorten milling time.Also, fluid is moved due to following the second grinding head
Supply position, therefore bearing appropriate can be carried out to the region of the substrate pressed by the second grinding head by fluid.
According to mode 7, in the substrate board treatment of any one of mode 1 to 6, second grinding head is configured in institute
It states and grinds the substrate on the outside of the radial direction of the substrate of the first grinding head.
According to which, can be mentioned in the peripheral part with substrate that grinding rate is lower by carrying out supplement grinding
The inner evenness of substrate after height grinding.
According to mode 8, in the substrate board treatment of any one of mode 1 to 7, the substrate board treatment includes the back side
First face of grinding device, the substrate is the face that device is not formed, and the milled processed is coated with by resist
The milled processed executed behind second face of the substrate and before exposure-processed.
According to which, the inner evenness for being able to suppress non-device face produces the exposure process for device side later
It is raw to influence.
According to mode 9, provide a kind of substrate board treatment, have: substrate holding mechanism, the substrate holding mechanism keep base
Plate simultaneously rotates the substrate, and has the multiple rollers that can be contacted with the peripheral part of the substrate, each roller be configured to
It is rotated centered on its axle center;First grinding head, first grinding head slide the first face of the first lapping apparatus and the substrate
It contacts and grinds first face;And second grinding head, the diameter of second grinding head is smaller than first grinding head, and makes
First face sliding contact of the second lapping apparatus and substrate and grind first face.
According to which, the roller of substrate is kept not rotate together with substrate.Therefore, grinding head can be configured to substrate
End, alternatively, the radial outside of substrate.As a result, it is possible to be ground to the end of substrate.Further, by the first grinding head pair
Entire substrate is ground, and is carried out supplement by grinding rate lower part of lesser second grinding head of diameter to substrate and ground
Mill, therefore being capable of equably grinding base plate.
According to mode 10, a kind of substrate processing method using same is provided, includes following process: making the first dismembyator of the first grinding head
First face sliding contact of tool and substrate, and make the second lapping apparatus of the second grinding head and first face of the substrate
Sliding contact, to grind first face of the substrate, the diameter of second grinding head is than first grinding head
Diameter is small;And from the substrate and the second surface side of the opposite side in first face and first grinding head and described the
Two grinding heads accordingly support the substrate.
According to which, reach function and effect identical with mode 1.
According to mode 11, in the substrate processing method using same of mode 10, first face of the substrate is that device is not formed
The face of part executes the milled processed after resist to be coated on to second face of the substrate and before exposure-processed.
According to mode 12, a kind of substrate processing method using same is provided, includes following process: connecing the peripheral part of multiple rollers and substrate
Touching, and rotate each roller around its axle center, so that the substrate be made to rotate;And in the rotation of the substrate, ground by first
Bistrique and diameter second grinding head smaller than first grinding head grind the first face of the substrate.
According to which, reach function and effect identical with mode 9.
According to mode 13, in the substrate processing method using same of mode 12, first face of the substrate is that device is not formed
The face of part executes the milled processed after resist to be coated on to second face of the substrate and before exposure-processed.
According to mode 14, it is related to a kind of storage medium, is the control stored for making computer execute substrate board treatment
Non-volatile storage medium of the program of method, the storage medium are stored for making computer execute the journey of following process
Sequence: make the first face sliding contact of the first lapping apparatus and substrate of the first grinding head, and make the second of the second grinding head to grind
First face sliding contact of grinder tool and the substrate, to grind first face of the substrate, described second is ground
The diameter of bistrique is smaller than first grinding head;And in the milled processed, from the opposite of first face of the substrate
Second surface side of side and first grinding head and second grinding head accordingly support the substrate.
According to which, reach function and effect identical with mode 1.
According to mode 15, it is related to a kind of storage medium, is the control stored for making computer execute substrate board treatment
Non-volatile storage medium of the program of method, the storage medium are stored for making computer execute the journey of following process
Sequence: contacting multiple rollers with the peripheral part of substrate, and rotates each roller around its axle center, so that the substrate be made to rotate;And
In the rotation of the substrate, ground by the first grinding head and diameter second grinding head smaller than the diameter of first grinding head
Grind the first face of the substrate.
According to which, reach function and effect identical with mode 9.
To sum up, embodiments of the present invention are illustrated based on several examples, but the embodiment party of above-mentioned invention
Formula is to facilitate the understanding of the present invention rather than limitation is of the invention.It certainly, can without departing from the spirit of the invention
The changes and improvements present invention, and equivalent is contained in the present invention.Also, it is being able to solve at least part of of the above problem
In range or in the range of reaching at least part effect can any combination or omit patent scope of the claimed and
Each structural element recorded in specification.
It is preferential this application claims proposed based on December 20th, 2017 Japanese publication Patent 2017-244060
Power.Japanese publication Patent 2017-244060 proposed on December 20th, 2017 it is claimed comprising specification, patent
Range, whole summary of the invention of abstract by referring to being incorporated into the application as a whole.
Japanese Unexamined Patent Publication 2013-172019 bulletin (patent document 1) comprising specification, patent scope of the claimed,
Whole summary of the invention of abstract by referring to being incorporated into the application as a whole.
Claims (13)
1. a kind of substrate board treatment, which is characterized in that have:
First grinding head, first grinding head make the first face sliding contact of the first lapping apparatus and substrate and grind described first
Face;
The diameter of second grinding head, second grinding head is smaller than the diameter of first grinding head, and make the second lapping apparatus with
First face sliding contact of the substrate and grind first face;And
Base supporting mechanism, the base supporting mechanism accordingly pass through with first grinding head and second grinding head respectively
Fluid pressure supports the substrate from the second surface side of the opposite side in first face of the substrate.
2. substrate board treatment as described in claim 1, which is characterized in that
The base supporting mechanism includes
First stationary. platen, first stationary. platen and first grinding head accordingly support the substrate;And
Second stationary. platen, second stationary. platen and second grinding head accordingly support the substrate.
3. substrate board treatment as claimed in claim 2, which is characterized in that
Second grinding head grinds the substrate in milled processed while swinging,
Second stationary. platen is configured to follow second grinding head and move.
4. substrate board treatment as described in claim 1, which is characterized in that
The base supporting mechanism has stationary. platen, which is configured in region corresponding with first grinding head
It is moved between region corresponding with second grinding head.
5. substrate board treatment as described in claim 1, which is characterized in that
The base supporting mechanism includes
Stationary. platen, the stationary. platen and first grinding head and second grinding head accordingly support the substrate;
First fluid route, the first fluid route supply fluid to the corresponding with first grinding head of the stationary. platen
Region;And
Second fluid route, the second fluid route supply fluid to the corresponding with second grinding head of the stationary. platen
Region.
6. substrate board treatment as claimed in claim 5, which is characterized in that
Second grinding head grinds the substrate in milled processed while swinging,
The stationary. platen is configured to follow second grinding head to change the institute that the fluid is supplied to the substrate
State the position on the second face.
7. such as substrate board treatment described in any one of claims 1 to 6, which is characterized in that
Second grinding head is configured to grind the substrate on the outside of the radial direction of the substrate of first grinding head.
8. such as substrate board treatment described in any one of claims 1 to 6, which is characterized in that
First face of the substrate is the face that device is not formed,
The milled processed is executed after resist to be coated on to second face of the substrate and before exposure-processed
Milled processed.
9. a kind of substrate board treatment, which is characterized in that have:
Substrate holding mechanism, which keeps substrate and rotates the substrate, and having can be with the substrate
Peripheral part contact multiple rollers, each roller is configured to rotate centered on its axle center;
First grinding head, first grinding head make the first face sliding contact of the first lapping apparatus and the substrate and grind described
First face;And
The diameter of second grinding head, second grinding head is smaller than the diameter of first grinding head, and make the second lapping apparatus with
First face sliding contact of substrate and grind first face.
10. a kind of substrate processing method using same, which is characterized in that include the following process:
Make the first face sliding contact of the first lapping apparatus and substrate of the first grinding head, and makes the second of the second grinding head to grind
Grinder tool and first face sliding contact of the substrate and first face for grinding the substrate, second grinding head
Diameter it is smaller than the diameter of first grinding head;And
The second surface side and first grinding head and second grinding head from the opposite side in first face of the substrate
Accordingly support the substrate.
11. a kind of substrate processing method using same, which is characterized in that include the following process:
It contacts multiple rollers with the peripheral part of substrate, and rotates each roller around its axle center, so that the substrate be made to rotate;And
In the rotation of the substrate, by the first grinding head and diameter second grinding head smaller than the diameter of first grinding head
Grind the first face of the substrate.
12. a kind of storage medium, be store the control method for making computer execute substrate board treatment program it is non-easily
The storage medium for the property lost, the storage medium are characterized in that, are stored for making computer execute the program of following process:
Make the first face sliding contact of the first lapping apparatus and substrate of the first grinding head, and makes the second of the second grinding head to grind
First face sliding contact of grinder tool and the substrate, to grind first face of the substrate, described second is ground
The diameter of bistrique is smaller than the diameter of first grinding head;And
The second surface side and first grinding head in the processing of the grinding, from the opposite side in first face of the substrate
The substrate is accordingly supported with second grinding head.
13. a kind of storage medium, be store the control method for making computer execute substrate board treatment program it is non-easily
The storage medium for the property lost, the storage medium are characterized in that, are stored for making computer execute the program of following process:
It contacts multiple rollers with the peripheral part of substrate, and rotates each roller around its axle center, so that the substrate be made to rotate;And
In the rotation of the substrate, by the first grinding head and diameter second grinding head smaller than the diameter of first grinding head
Grind the first face of the substrate.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017244060A JP6887371B2 (en) | 2017-12-20 | 2017-12-20 | A storage medium that stores a board processing device, a control method for the board processing device, and a program. |
JP2017-244060 | 2017-12-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN110014363A true CN110014363A (en) | 2019-07-16 |
Family
ID=66813745
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201811556240.4A Pending CN110014363A (en) | 2017-12-20 | 2018-12-19 | Substrate board treatment, substrate processing method using same, the storage medium for storing program |
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Country | Link |
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US (1) | US20190184517A1 (en) |
JP (1) | JP6887371B2 (en) |
KR (1) | KR20190074951A (en) |
CN (1) | CN110014363A (en) |
TW (1) | TWI765125B (en) |
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JP2023130650A (en) * | 2022-03-08 | 2023-09-21 | 株式会社荏原製作所 | Substrate polishing method |
EP4499344A1 (en) * | 2022-03-31 | 2025-02-05 | Heraeus Conamic North America LLC | High frequency polishing of ceramics |
EP4269024A1 (en) * | 2022-04-29 | 2023-11-01 | Heraeus Conamic North America LLC | High frequency polishing of ceramics |
CN118706319B (en) * | 2024-08-27 | 2024-10-29 | 太原太航德克森自控工程股份有限公司 | A gas inspection device for accurately docking static pressure holes |
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- 2017-12-20 JP JP2017244060A patent/JP6887371B2/en active Active
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- 2018-11-07 KR KR1020180135673A patent/KR20190074951A/en not_active Abandoned
- 2018-11-28 TW TW107142560A patent/TWI765125B/en active
- 2018-12-18 US US16/224,537 patent/US20190184517A1/en not_active Abandoned
- 2018-12-19 CN CN201811556240.4A patent/CN110014363A/en active Pending
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CH693136A5 (en) * | 2001-01-18 | 2003-03-14 | Rolf Muri | Surface finishing of cast bases or cement-containing slabs, forms pigmented, thin cement which is rubbed into dry surface |
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US20130213437A1 (en) * | 2012-02-21 | 2013-08-22 | Kabushiki Kaisha Toshiba | Substrate processing apparatus and substrate processing method |
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Also Published As
Publication number | Publication date |
---|---|
TWI765125B (en) | 2022-05-21 |
US20190184517A1 (en) | 2019-06-20 |
JP2019110266A (en) | 2019-07-04 |
KR20190074951A (en) | 2019-06-28 |
TW201929095A (en) | 2019-07-16 |
JP6887371B2 (en) | 2021-06-16 |
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Application publication date: 20190716 |