CN110011523B - Power driving phase inverter and low-end driving to high-end driving circuit - Google Patents
Power driving phase inverter and low-end driving to high-end driving circuit Download PDFInfo
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- CN110011523B CN110011523B CN201910350075.5A CN201910350075A CN110011523B CN 110011523 B CN110011523 B CN 110011523B CN 201910350075 A CN201910350075 A CN 201910350075A CN 110011523 B CN110011523 B CN 110011523B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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Abstract
The invention discloses a power driving inverter and a low-end driving high-end driving circuit, wherein the power driving inverter comprises an input end, the input end is connected with one end of a dummy load, the other end of the dummy load is connected with a power supply voltage end, the input end is also connected with the input end of a signal conditioning circuit, the output end of the signal conditioning circuit is connected with the input end of an output driving circuit, the output end of the output driving circuit is connected with the input end of a power switch, and the power switch is connected with the power supply voltage end. The power driving phase inversion device is simple in principle and simple in structure, is easy to realize and install, creates favorable conditions for converting low-end driving into high-end driving, can switch a control circuit of the low-end driving into a control circuit of the high-end driving on the premise that a control signal of control equipment is unchanged, greatly reduces the complexity of wiring, brings great flexibility to the design of the whole circuit system, greatly improves the safety of the whole circuit structure, and reduces the refitting cost.
Description
Technical Field
The invention relates to the electrical field, in particular to a power driving phase inversion device and a low-end driving to high-end driving circuit.
Background
In the control circuits of various electrical devices, low-end driving is often designed, because the circuit structure is easy to realize, but the electrical system matched with the control device is required to be designed into the shape shown in fig. 1, namely, one end of a load (electric equipment) is required to be connected to a power supply, the other end of the load is required to be connected with a switching tube of the control device, the switching tube is connected to a ground terminal, and whether the load is electrified or not is controlled by controlling the on-off state of the switching tube through a control signal so as to control the on-off state of the switching tube and the ground terminal.
Such a circuit configuration has a disadvantage in that it is charged when the load is not operated, electrical aging or operator negligence often causes a short-circuit accident, and particularly, the situation that the number of electric devices is relatively large is more difficult to grasp; on the other hand, the two ends of the load are wired to different places, and the wire layout is complex.
In contrast, in the circuit structure of high-end drive, one end of the load is connected with the switching tube, the other end of the load is directly grounded, and under normal conditions, when no control signal exists, the switching tube is not conducted, no current flows in the load, namely the load is in a power-off state; on the contrary, if the control signal is valid, the switching tube is turned on, so that the current flows out from the positive end of the power supply through the switching tube at the high end and then flows out through the load, and the load enters the electrified state, thereby generating a response action, and the problem of the control at the low end is avoided in the control at the high end.
Therefore, changing various control circuits that have been driven by a low-end to a high-end to solve the shortages of low-end driving is a urgent problem to be solved, but because of the many power-consumption components and the complex circuit structure of various control circuits driven by a low-end, when changing to high-end driving, the whole circuit structure needs to be redesigned, which increases the difficulty and cost of implementation;
and because the level between the control end and the output end of the switching tube has higher requirements when the switching tube works normally, the level of the control end is required to be 5-20V higher than the level of the output end, when the output end of the switching tube is grounded, the voltage is only applied to the control end, and when the switching tube is connected with a power supply, the control end must be 5-20V higher than the voltage of the power supply, so that the difference between the control signal of the switching tube controlled by the low end and the control signal of the switching tube controlled by the high end can be driven, and the control signal of the control device driven by the low end is further limited to realize the high end driving.
Disclosure of Invention
The invention aims to solve the problems in the prior art and provide a power driving inverter device and a low-side driving-to-high-side driving circuit.
The power driving phase inversion device comprises an input end, wherein the input end is connected with one end of a dummy load, the other end of the dummy load is connected with a power supply voltage end, the input end is also connected with the input end of a signal conditioning circuit, the output end of the signal conditioning circuit is connected with the input end of an output driving circuit, the output end of the output driving circuit is connected with the input end of a power switch, and the power switch is connected with the power supply voltage end and is driven to be switched by a signal of the output driving circuit.
Preferably, in the power driven inverter, the dummy load is a resistor with a resistance value of 10kΩ±1K Ω.
Preferably, in the power driven inverter, the signal conditioning circuit is a hysteresis comparator circuit with an adjustable comparison point.
Preferably, the power driving inverter device includes a fifth resistor connected to the input end, the other end of the fifth resistor is connected to the forward input end of the operational amplifier and cooperates with a grounded fourth resistor to divide the input signal, the reverse input end of the operational amplifier is connected to one ends of a third resistor and a tenth resistor, the other end of the tenth resistor is grounded, and the other end of the third resistor is connected to a power supply voltage end; and the output end of the operational amplifier is connected with a second resistor and a ninth resistor which control the return difference range of the operational amplifier.
Preferably, in the power driven inverter, the power switch is a MOSFET or a high-side intelligent switch with an on-resistance of between 10 and 200 milliohms.
Preferably, in the power driving inverter, the power switch is a high-end intelligent switch, the output driving circuit includes a sixth resistor connected to an output end of the signal conditioning circuit, the sixth resistor is connected in series with an eighth resistor connected to ground, and divides an output signal of the signal conditioning circuit to obtain a voltage range value for controlling a switching state of the high-end intelligent switch, and then outputs the voltage range value to the high-end intelligent switch.
Preferably, in the power driven inverter, the power switch is a two-way high-end intelligent output switch, and the power switch comprises two ways of switches connected in parallel, a power supply of the two ways of high-end intelligent output switches is connected with a power supply, a ground is grounded, and two output ends are connected with cathodes of a first diode and a second diode which are connected in parallel, and anodes of the first diode and the second diode are grounded.
Preferably, in the power-driven inverter, the power switch is a P-type MOSFET, the output driving circuit includes a twelfth resistor connected to the signal conditioning circuit, the twelfth resistor is connected to a base of the switching tube, a collector of the switching tube is grounded, an emitter of the triode is connected to one end of an eleventh resistor, the other end of the eleventh resistor is connected to an anode of the voltage regulator tube and a gate of the P-type MOSFET, a cathode of the voltage regulator tube is connected to a power supply and a drain of the P-type MOSFET, and a source of the P-type MOSFET is connected to an output end.
Preferably, in the power driving inverter, the power switch is an N-type MOSFET, the output driving circuit includes a boost circuit connected to an output end of the signal conditioning circuit and one end of an eighteenth resistor, the output end of the boost circuit and the other end of the eighteenth resistor are both connected to an input end of the interlocking switching circuit, the output end of the interlocking switching circuit is connected to a gate electrode of the N-type MOSFET, a drain electrode of the N-type MOSFET is connected to a power supply voltage end, the power supply voltage end is connected to a gate stage of the N-type MOSFET through the seventeenth resistor, and a source electrode of the N-type MOSFET is connected to the output end.
The low-end driving and high-end driving circuit comprises control equipment and an electric system comprising a power supply and a load, wherein the control equipment is connected with the electric system through the power driving phase inversion device, and the power driving phase inversion device switches the control equipment and the low-end driving circuit of the electric system into a high-end driving circuit.
The technical scheme of the invention has the advantages that:
the scheme is exquisite in design, the power drive phase inversion device which is easy to realize and install is simple in structure through designing a circuit principle, favorable conditions are created for converting low-end drive into high-end drive, the low-end drive control circuit can be switched into the high-end drive control circuit on the premise that the control signal of the control device is unchanged as long as the low-end drive phase inversion device is connected between the existing control device and an electrical system and the circuit structure is subjected to fine adjustment, the complexity of wiring and the difficulty of implementation are greatly reduced, great flexibility is brought to the design of the whole circuit system, the safety of the whole circuit structure is greatly improved, and the refitting cost is reduced.
The main elements of the circuit in the phase inverter device are screened, so that the power consumption of the circuit can be effectively reduced, the heating of the circuit is reduced, and the running safety and low cost of the circuit are ensured.
The phase inverter has various implementation forms, can select the optimal circuit structure according to different application occasions, has wide application range and good flexibility, and is convenient to popularize and apply.
Drawings
FIG. 1 is a schematic diagram of a control circuit for a low-side drive described in the background;
FIG. 2 is a schematic diagram of a low-side-to-high-side drive circuit according to the present invention;
FIG. 3 is a schematic diagram of an inverter device of the present invention (P+ in the drawing is the power supply voltage);
FIG. 4 is a schematic diagram of a dummy load and signal conditioning circuit according to the present invention (P+ in the drawing is the power supply voltage);
FIG. 5 is a schematic diagram of a power switch according to the present invention, which is a high-side intelligent switch and an output driving circuit thereof (P+ in the drawing is a power supply voltage);
FIG. 6 is a schematic diagram of a power switch of the present invention as a P-type MOSFET and its output driving circuit (P+ in the drawing is the power supply voltage);
fig. 7 is a schematic diagram of a power switch according to the present invention, which is an N-type MOSFET and its output driving circuit (p+ in the drawing is a power supply voltage).
Detailed Description
The objects, advantages and features of the present invention are illustrated and explained by the following non-limiting description of preferred embodiments. These embodiments are only typical examples of the technical scheme of the invention, and all technical schemes formed by adopting equivalent substitution or equivalent transformation fall within the scope of the invention.
In the description of the embodiments, it should be noted that the positional or positional relationship indicated by the terms such as "center", "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal", "inner", "outer", etc. are based on the positional or positional relationship shown in the drawings, are merely for convenience of description and simplification of description, and do not indicate or imply that the apparatus or elements referred to must have a specific orientation, be configured and operated in the specific orientation, and thus are not to be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. In the description of the scheme, the direction approaching the operator is the near end, and the direction separating from the operator is the far end, with reference to the operator.
The low-side driving to high-side driving circuit disclosed by the invention is described below with reference to the accompanying drawings, as shown in fig. 2, the low-side driving to high-side driving circuit comprises a control device 10 and an electrical system 20, the control device 10 comprises a switch tube 101 and a control unit (not shown in the drawing) for sending control signals to the switch tube, the electrical system 20 comprises a power supply 201, a load 202 (various electric devices) and a grounded shell 203, one end of the load is connected with the positive electrode of the power supply, the other end of the load is connected with the drain electrode of the switch tube of the control device, the source electrode of the switch tube and the negative electrode of the power supply are connected to a rack, and the gate electrode of the switch tube is connected with the control unit, so that whether the load is electrified or not is controlled by controlling the on-off states of the load and the grounding end.
When switching from low-side driving to high-side driving, as shown in fig. 2, a power driving inverter device 30 is connected between the control device 10 and the electrical system 20, so that the low-side driving circuit of the control device 10 and the electrical system 20 can be switched into a high-side driving circuit by the power driving inverter device 30, mainly one end of a load 201 is adjusted to be connected with the output end of the power driving inverter device 30, the other end is connected with a rack 203 nearby, the power driving inverter device 30 is connected with the positive electrode of a power supply 201 and the signal output end of a switching tube 101, and the electrical system 20 is connected with the control device 10 through a group of power wires to supply power to the control device 10.
Specifically, as shown in fig. 2-fig. 4, the drain electrode of the switching tube 101 of the control device 10 is connected to the input end 1 of the power driving inverter device, the input end 1 is connected to one end of the dummy load 2, the other end of the dummy load 2 is connected to the power voltage end p+ (positive electrode of the power supply 202), the input end 1 is further connected to the input end of the signal conditioning circuit 3, the output end of the signal conditioning circuit 3 is connected to the input end of the output driving circuit 4, the output end of the output driving circuit 4 is connected to the input end of the power switch 5, the power switch 5 is connected to the power voltage end p+ (positive electrode of the power supply 202) and is driven by the signal of the output driving circuit 4, and the output end of the power switch 5 is connected to one end of the load 201.
By providing the dummy load 2 to the front-end control device 10, the input signal of the control device 10 is converted into the input of the signal conditioning circuit 3, the signal conditioning circuit 3 shapes the input signal into a standard full-width square wave signal from the power supply to the ground for the output driving circuit 4 of the rear stage, the output driving circuit 4 controls the switch of the power switch 5 so as to become the final driving load 201, at this time, the load 201 is connected with the power supply 202 through the power driving inverter device 30 and is not directly connected any more, and the driving of the load 201 is switched from the control of the original grounding terminal to the control of the power supply terminal.
The dummy load 2 is an impedance far larger than that of electric equipment (load 201), and is preferably a resistor R7 with a resistance value of 10KΩ+/-1K Ω, so that the power consumption is extremely low, and too much heating is avoided; on the other hand, since the dummy load 2 has a large impedance, the waveform of the signal inputted to the signal conditioning circuit is unlikely to be a full-width signal from the power supply to the ground, and is generally a triangular wave or an irregular trapezoidal wave, and thus the signal needs to be shaped by the signal conditioning circuit.
The signal conditioning circuit 3 is preferably a hysteresis comparator circuit with an adjustable comparison point, specifically, as shown in fig. 4, the hysteresis comparator circuit includes a fifth resistor R5 connected to the input end input (1), the other end of the fifth resistor R5 is connected to the forward input end of the operational amplifier U2A and one end of a fourth resistor R4, the other end of the fourth resistor R4 is grounded GND, the reverse input end of the operational amplifier U2A is connected to one ends of a third resistor R3 and a tenth resistor R10, the other end of the tenth resistor R10 is grounded, and the other end of the third resistor R3 is connected to a power supply voltage end p+; the output end of the operational amplifier U2A is connected with one ends of a second resistor R2 and a ninth resistor R9, the other end of the second resistor R2 is grounded GND through a first resistor R1, and the other end of the ninth resistor is connected with the reverse input end of the operational amplifier U2A.
The second resistor R2, the third resistor R3, the fourth resistor R4, the fifth resistor R5, the ninth resistor R9, and the tenth resistor R10 together with the op-amp U2 form a hysteresis comparator as a signal conditioning circuit. The fourth resistor R4 and the fifth resistor R5 divide the input signal to enable the signal to be suitable for the input range of the operational amplifier U2; the third resistor R3 and the tenth resistor R10 divide the input voltage of the power supply voltage end P+ so as to adjust the comparison point of the hysteresis comparator; the second resistor R2 and the ninth resistor R9 control the return difference range of the hysteresis comparator.
In order to reduce the heating value of the module, the power switch 5 selects a MosFET device (N type or P type) or a high-end intelligent switch with the on-resistance of 10-200 milliohm level; the output driving circuit 4 converts the output of the conditioning circuit into an 'on-off' voltage range required by the power switch 5 'on-off' according to the device requirements of the power switch 5.
As shown in fig. 5, when the power switch 5 is a high-end intelligent switch, the output driving circuit 4 includes a sixth resistor R6 connected to the output end of the signal conditioning circuit 3, where the sixth resistor R6 is connected in series with an eighth resistor R8 that is grounded, and divides the output signal of the signal conditioning circuit to obtain a voltage range value of turning on or off the high-end intelligent switch U2, and then outputs the voltage range value to the high-end intelligent switch U2; when the voltage range output by the output driving circuit 4 is between +4V and +5V, the high-end intelligent switch U2 is turned on, and when the voltage range output by the output driving circuit 4 is between 0V and +1V, the high-end intelligent switch U2 is turned off.
Further, as shown in fig. 5, the power switch 5 is a two-way high-end intelligent output switch, which includes two switches connected in parallel, so as to increase the driving capability of the load 201; the power supply end (Vbb end) of the double-circuit high-end intelligent output switch U2 is connected with a power supply voltage end P+, the grounding end is grounded through a diode D3, the two output ends are connected with the cathodes of a first diode D1 and a second diode D2 which are connected in parallel, the anodes of the first diode D1 and the second diode D2 are grounded to GND, the first diode D1 and the second diode D2 are used as diodes for output protection and fast recovery, on one hand, the diodes are used as freewheeling channels of inductive load current when the switch is turned off, and on the other hand, the diodes are used as freewheeling channels of the inductive load current when the power supply is reversely connected to protect the output switch.
As shown in fig. 6, when the power switch 5 is a P-type MOSFET, the output driving circuit 4 includes a twelfth resistor R12 connected to the output end of the signal conditioning circuit 3, the twelfth resistor R12 is connected to the base of the switching tube Q3, the collector of the switching tube Q3 is grounded GND, the emitter of the triode Q3 is connected to one end of the eleventh resistor R11, the other end of the eleventh resistor R11 is connected to the anode of the voltage regulator D4 and the gate of the P-type MOSFET, the voltage regulator D4 is a 4.7-15V voltage regulator, preferably a 7.5V voltage regulator, the cathode of the voltage regulator D4 is connected to the power supply voltage end p+ and the drain of the P-type MOSFET, and the source of the P-type MOSFET is connected to the output end output.
The P-type MOSFETQ2 is turned on when the voltage range output by the output driving circuit 4 is P+15V to P+ -4.5V, and the P-type MOSFETQ2 is turned off when the voltage range output by the output driving circuit 4 is P+ -1V to P+.
In this embodiment, when the output driving circuit 4 specifically works, the control signal from the signal conditioning circuit 3 controls the on/off of the switching tube Q3 through the twelfth resistor R12, and when the input signal is low, the switching tube Q3 is turned on, the voltage stabilizing tube D4 and the eleventh resistor R11 form a voltage division, the voltage of the G electrode (gate electrode) of the P-type mosfet Q2 is p+ -7.5v, and the P-type mosfet Q2 is turned on; when the input signal is high, the switching tube Q3 is turned off, the voltage stabilizing tube D4 and the eleventh resistor R11 do not form partial voltage, the G pole voltage of the P-type MOSFETQ2 is P+, and the P-type MOSFETQ2 is turned off.
As shown in fig. 7, when the power switch is an N-type MOSFET, the output driving circuit 4 includes a boost circuit connected to the output end of the signal conditioning circuit and one end of an eighteenth resistor R18, the output end of the boost circuit and the other end of the eighteenth resistor R18 are both connected to the input end of the interlock switch circuit, the output end of the interlock switch circuit is connected to the gate electrode of the N-type MOSFET q1, the drain electrode of the N-type MOSFET q1 is connected to a power supply voltage end, the power supply voltage end is connected to the gate stage of the N-type MOSFET q1 through the seventeenth resistor R17, and the source electrode of the N-type MOSFET q1 is connected to the output end.
As shown in fig. 7, the boost circuit 41 includes a capacitor C3 and a fourteenth resistor R14 connected in parallel to the output end of the signal conditioning circuit 3, the other end of the capacitor C3 is grounded and connected to the gate of the MOS transistor N1 through the fifteenth resistor R15, the other end of the fourteenth resistor R14 is connected to one end of the inductor L1, the other end of the inductor L1 is connected to the drain of the MOS transistor N1 and one end of the capacitor C1, the source of the MOS transistor N1 is grounded, the other end of the capacitor C1 is connected to the connection line of two serially connected diodes D5 and D7, the anode of the diode D7 is connected to the power supply voltage end p+ and the ground end GND, the cathode of the diode D5 is connected to the interlock switch circuit, the power supply voltage end p+ is also connected to the anode of the voltage stabilizing diode D6 and one end of the thirteenth resistor R13, and the other end of the voltage stabilizing diode D6 and the thirteenth resistor R13 are connected to the interlock switch circuit.
As shown in fig. 7, the interlocking switch circuit 42 includes a first triode Q4 and a second triode Q5, where a base electrode of the second triode Q5 is connected to the eighteenth resistor R18, an emitter electrode of the second triode Q5 is grounded, a collector electrode of the second triode Q5 is connected to the base electrode of the first triode Q4, the base electrode of the first triode Q4 is further connected to the output end of the boost circuit through a sixteenth resistor R16, a collector electrode of the first triode Q4 is connected to the output end of the boost circuit, and an emitter electrode of the first triode Q4 is connected to the gate electrode of the N-type MOSFET.
In this embodiment, when the voltage range output by the output driving circuit 4 is p++4.5V to p++15V, the N-type MOSFET is turned on; when the voltage range output by the output driving circuit 4 is less than or equal to P++1V, the N-type MOSFETQ1 is turned off.
In detail, in this embodiment, when the output driving circuit 4 specifically works, the control signal from the signal conditioning circuit 3 is divided into two paths, and one path of control signal is used for raising the voltage to p++7.5V through the booster circuit; the other path controls the on-off of the second triode Q5 through an eighteenth resistor R18, and further controls the on-off of the first triode Q4.
When the input signal is high, the second triode Q5 is turned on, the base voltage of the first triode Q4 is low, the first triode Q4 is turned off, the voltage of the power supply voltage end P+ is applied to the G pole of the N-type MOSFETQ1 through a seventeenth resistor R17, and the N-type MOSFETQ1 is turned off;
when the input signal is low, the second triode Q5 is turned off, the base voltage of the first triode Q4 is high, the first triode Q4 is turned on, the boost voltage P++7.5V is applied to the G pole of the N-type MOSFETQ1 through the first triode Q4, and the N-type MOSFETQ1 is turned on for output.
The invention has various embodiments, and all technical schemes formed by equivalent transformation or equivalent transformation fall within the protection scope of the invention.
Claims (9)
1. The power driving phase inverter is characterized in that: the power supply circuit comprises an input end (1), wherein the input end (1) is connected with one end of a dummy load (2), the other end of the dummy load (2) is connected with a power supply voltage end, the input end (1) is also connected with the input end of a signal conditioning circuit (3), the output end of the signal conditioning circuit (3) is connected with the input end of an output driving circuit (4), the output end of the output driving circuit (4) is connected with the input end of a power switch (5), and the power switch (5) is connected with the power supply voltage end and is driven by a signal of the output driving circuit (4); the circuit further comprises a fifth resistor (R5) connected with the input end (1), the other end of the fifth resistor (R5) is connected with the forward input end of the operational amplifier (U2A) and is matched with a fourth resistor (R4) which is grounded to divide the input signal, the reverse input end of the operational amplifier (U2A) is connected with one ends of a third resistor (R3) and a tenth resistor (R10), the other end of the tenth resistor (R10) is grounded, and the other end of the third resistor (R3) is connected with a power supply voltage end; the output end of the operational amplifier (U2A) is connected with a second resistor (R2) and a ninth resistor (R9) for controlling the return difference range.
2. The power driven inverter of claim 1, wherein: the dummy load is a resistor with a resistance value of 10KΩ+ -1K Ω.
3. The power driven inverter of claim 1, wherein: the signal conditioning circuit is a hysteresis comparator circuit with an adjustable comparison point.
4. The power driven inverter of claim 1, wherein: the power switch (5) is a MOSFET or a high-side intelligent switch with an on-resistance of between 10 and 200 milliohms.
5. The power driven inverter of any of claims 1-4, wherein: the power switch (5) is a high-end intelligent switch, the output driving circuit comprises a sixth resistor (R6) connected with the output end of the signal conditioning circuit, the sixth resistor (R6) is connected with an eighth resistor (R8) which is grounded in series, and the output signal of the signal conditioning circuit is divided to obtain a voltage range value for controlling the switching state of the high-end intelligent switch and then output to the high-end intelligent switch.
6. The power driven inverter of claim 5, wherein: the power switch (5) is a two-way high-end intelligent output switch, and comprises two ways of switches connected in parallel, wherein a power supply of the two ways of high-end intelligent output switch is connected with a power supply, a ground connection is connected with the ground, and two output ends are connected with cathodes of a first diode (D1) and a second diode (D2) which are connected in parallel, and anodes of the first diode and the second diode are grounded.
7. The power driven inverter of any of claims 1-4, wherein: the power switch is a P-type MOSFET, the output driving circuit comprises a twelfth resistor (R12) connected with the signal conditioning circuit, the twelfth resistor (R12) is connected with the base electrode of a triode (Q3), the collector electrode of the triode (Q3) is grounded, the emitter electrode of the triode is connected with one end of an eleventh resistor (R11), the other end of the eleventh resistor (R11) is connected with the anode of a voltage stabilizing tube (D4) and the gate electrode of the P-type MOSFET, the cathode of the voltage stabilizing tube (D4) is connected with the power supply and the drain electrode of the P-type MOSFET, and the source electrode of the P-type MOSFET is connected with the output end (output).
8. The power driven inverter of any of claims 1-4, wherein: the power switch (5) is an N-type MOSFET, the output driving circuit (4) comprises a boosting circuit (41) and one end of an eighteenth resistor (R18), the output end of the boosting circuit and the other end of the eighteenth resistor (R18) are both connected with the input end of an interlocking switch circuit (42), the output end of the interlocking switch circuit is connected with the gate electrode of the N-type MOSFET, the drain electrode of the N-type MOSFET is connected with a power supply voltage end, the power supply voltage end is connected with the gate stage of the N-type MOSFET through a seventeenth resistor (R17), and the source electrode of the N-type MOSFET is connected with the output end.
9. The low-end drive to high-end drive circuit comprises control equipment (10) and an electrical system (20) comprising a power supply and a load, and is characterized in that: the control device (10) is connected to the electrical system (20) by a power driven inverter (30) as claimed in claim 1, the power driven inverter (30) switching the control device (10) and the low-side drive circuit of the electrical system (20) to a high-side drive circuit.
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| CN201910350075.5A CN110011523B (en) | 2019-04-28 | 2019-04-28 | Power driving phase inverter and low-end driving to high-end driving circuit |
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| CN201910350075.5A CN110011523B (en) | 2019-04-28 | 2019-04-28 | Power driving phase inverter and low-end driving to high-end driving circuit |
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| CN110011523B true CN110011523B (en) | 2023-12-29 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104467779A (en) * | 2014-12-18 | 2015-03-25 | 南车株洲电力机车研究所有限公司 | Circuit control system and control method |
| CN106253641A (en) * | 2016-08-26 | 2016-12-21 | 重庆西南集成电路设计有限责任公司 | A kind of commutation diode replacement circuit and reverse-biased cut-off drive circuit |
| JP2017118758A (en) * | 2015-12-25 | 2017-06-29 | 株式会社デンソー | Switching element drive power supply circuit |
| CN107359787A (en) * | 2017-09-08 | 2017-11-17 | 电子科技大学 | A gate drive circuit with adaptive dead time |
| CN108075752A (en) * | 2016-11-11 | 2018-05-25 | 富士电机株式会社 | Load driving circuits |
| CN209805664U (en) * | 2019-04-28 | 2019-12-17 | 苏州蓝博控制技术有限公司 | Power-driven phase inverter and low-end-to-high-end driving circuit |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016027775A (en) * | 2014-06-27 | 2016-02-18 | サンケン電気株式会社 | Switching power supply device |
-
2019
- 2019-04-28 CN CN201910350075.5A patent/CN110011523B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104467779A (en) * | 2014-12-18 | 2015-03-25 | 南车株洲电力机车研究所有限公司 | Circuit control system and control method |
| JP2017118758A (en) * | 2015-12-25 | 2017-06-29 | 株式会社デンソー | Switching element drive power supply circuit |
| CN106253641A (en) * | 2016-08-26 | 2016-12-21 | 重庆西南集成电路设计有限责任公司 | A kind of commutation diode replacement circuit and reverse-biased cut-off drive circuit |
| CN108075752A (en) * | 2016-11-11 | 2018-05-25 | 富士电机株式会社 | Load driving circuits |
| CN107359787A (en) * | 2017-09-08 | 2017-11-17 | 电子科技大学 | A gate drive circuit with adaptive dead time |
| CN209805664U (en) * | 2019-04-28 | 2019-12-17 | 苏州蓝博控制技术有限公司 | Power-driven phase inverter and low-end-to-high-end driving circuit |
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| CN110011523A (en) | 2019-07-12 |
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