CN110007113B

CN110007113B - Test socket

Info

Publication number: CN110007113B
Application number: CN201811376927.XA
Authority: CN
Inventors: 龙德中; 申东辉; 柳基永; 李昇东; 全镇国; 朴成圭; 朴瑛植
Original assignee: SK Hynix Inc; Okins Electronics Co Ltd
Current assignee: SK Hynix Inc; Okins Electronics Co Ltd
Priority date: 2017-12-29
Filing date: 2018-11-19
Publication date: 2021-04-30
Anticipated expiration: 2038-11-19
Also published as: CN110007113A; KR101967401B1

Abstract

The invention provides a test socket. The test socket may be connected between a semiconductor device and a tester to perform an electrical test on the semiconductor device. The test socket may include an insulator layer, polymer beads, and conductive powder. The insulator layer may be disposed between the semiconductor device and the tester. The polymer beads may be disposed on the entire surface of the insulator layer. The conductive powders may be arranged in the insulator layer to form a plurality of groups.

Description

Test socket

Cross Reference to Related Applications

The present application claims priority of korean application No. 10-2017-0184088 filed on 29.12.2017 to the korean intellectual property office, which is incorporated herein by reference in its entirety.

Technical Field

Various embodiments may relate generally to a semiconductor device, and more particularly, to a test socket connected between a semiconductor package and a tester.

Background

In general, in order to ensure reliability of a semiconductor package before delivering the semiconductor package to a consumer, the semiconductor package may be tested under normal conditions and/or pressure conditions such as high temperature and high pressure to divide the semiconductor package into a normal semiconductor package and an abnormal semiconductor package.

The semiconductor package may be fixed to the test socket. A test socket having a semiconductor package may be loaded into a tester to perform a test process on the semiconductor package. The test socket may be supported by silicone.

However, silicone resins may have a low heat distortion temperature. In addition, the volume of silicone is subject to changes due to temperature. Therefore, the shape of the test socket can be easily changed. As a result, the changed shape of the test socket may cause a test failure of the semiconductor package having a fine pitch.

Disclosure of Invention

In example embodiments of the present disclosure, a test socket may be connected between a semiconductor device and a tester to perform electrical testing of the semiconductor device. The test socket may include an insulator layer, polymer beads, and conductive powder. The insulator layer may be disposed between the semiconductor device and the tester. The polymer beads may be disposed on the entire surface of the insulator layer. The conductive powders may be arranged in the insulator layer to form a plurality of groups.

In an example embodiment of the present disclosure, a test socket may include a silicon polymer synthetic rubber and a plurality of conductive powder groups. The silicone polymer synthetic rubber may include a silicone rubber resin and a polymer synthetic resin mixed with each other. The conductive powder group may include conductive powder. The conductive powder groups may be magnetically arranged in the silicon polymer elastomer in a uniform regular pattern.

Drawings

The above and other aspects, features and advantages of the presently disclosed subject matter will become more apparent from the following detailed description when taken in conjunction with the accompanying drawings, wherein:

fig. 1 is a cross-sectional view illustrating a test socket according to an example embodiment.

Fig. 2A and 2B are sectional views showing the arrangement of particles of a test socket according to the average diameter of polymer beads;

fig. 3A and 3B are sectional views illustrating a restoring force of a test socket according to an example embodiment;

fig. 4A to 4C are sectional views showing the gap variation of the conductive powder group at high and low temperatures;

FIG. 5 is a graph illustrating a thermal limit temperature resistance of a polymer according to an example embodiment;

FIG. 6 is a graph illustrating resistance based on number of tests according to an example embodiment;

FIG. 7 is a graph illustrating contact force based on number of tests according to an example embodiment;

FIG. 8 is a graph illustrating a resistance distribution at high temperature according to an example embodiment; and

fig. 9 is a graph illustrating a resistance distribution at a low temperature according to an example embodiment.

Detailed Description

Various embodiments of the present invention will be described in more detail with reference to the accompanying drawings. The figures are schematic diagrams of various embodiments (and intermediate structures). Variations from the configurations and shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Accordingly, the described embodiments should not be construed as limited to the particular configurations and shapes shown herein but are to include deviations in configurations and shapes that do not depart from the spirit and scope of the invention as defined in the appended claims.

The present invention is described herein with reference to cross-sectional and/or plan views of idealized embodiments of the present invention. However, the embodiments of the present invention should not be construed as limiting the inventive concept. Although a few embodiments of the present invention have been shown and described, it would be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and concepts of the invention.

Referring to fig. 1, the test socket 100 of this example embodiment may be disposed between a semiconductor device 102 and a tester 104. The test socket 100 may include a body layer 110.

The body layer 110 may include a silicon insulating material. A plurality of insulating polymer beads 120 and conductive powder 130 may be disposed in the body layer 110.

The insulating polymer beads 120 may be distributed throughout the region of the body layer 110.

The conductive powder 130 may be distributed at regions corresponding to the external terminals 102a of the semiconductor device 102 and the external terminals 104a of the tester 104.

Since the body layer 110 may have an insulating property, the body layer 110 may prevent oxidation of the conductive powder 130 and an electrical short between the conductive powders 130. In addition, the body layer 110 may prevent particles from penetrating into the test socket 100. The silicon insulator may include a silicon rubber resin. Alternatively, the body layer 110 may include an elastic material having expansion and contraction characteristics. For example, the body layer 110 may include a heat-resistant polymer having a cross-linked structure, such as polybutadiene rubber, urethane rubber, natural rubber, polyisoprene rubber, or the like.

The body layer 110 may have a conical or arcuate upper surface to ensure individual contact. A Flexible Printed Circuit Board (FPCB) film may be disposed on the upper surface of the body layer 110. A contact guide film having a contact hole may be disposed on the upper surface of the body layer 110 to ensure individual contact. The FPCB film and the contact guide film may also be disposed on the lower surface of the body layer 110. The frame may surround the body layer 110. The frame may comprise stainless steel for shielding electromagnetic waves.

The conductive powder 130 may include conductive particles that can be magnetically disposed. The conductive powder 130 may include Au and/or Ni powder. The conductive powder 130 may include Au, Ag, Fe, Ni, Co, and combinations thereof. The surface of each conductive powder 130 may be plated with a layer having a dissimilar metal to improve the conductivity of the conductive powder 130.

The conductive powders 130 may be closely arranged to form a group 130 g. The conductive powder groups 130g may form vertical conductive paths with respect to the surface of the body layer 110. Thus, when the semiconductor device 102 may be tested, the conductive characteristic may be represented by a minimum pressure in a vertical direction with respect to the surface of the body layer 110. That is, by flowing a current with a minimum pressure, by enhancing a conductive density in a vertical direction, and by improving electrical characteristics, test reliability can be ensured.

Fig. 2A and 2B are sectional views showing the arrangement of particles of the test socket according to the average diameter of the polymer beads. Fig. 2A may show a sectional view of a test socket when the average diameter of the polymer beads may exceed a reference value, and fig. 2B may show a sectional view of a test socket when the average diameter of the polymer beads does not exceed a reference value.

The conductive powder 130 may have an average diameter of about 20 μm to about 40 μm. Although the conductive powder 130 may not have a specific fixed pattern, the conductive powder 130 having an average diameter of about 20 μm to about 40 μm may have outstanding electrical characteristics. For example, when the average diameter of the conductive powder 130 may be less than about 20 μm, although the bonding strength between the particles may be enhanced, the resistance of the conductive powder 130 may increase. When the average diameter of the conductive powder 130 may be higher than about 40 μm, although particles may be easily formed, the conductivity of the conductive powder 130 may be reduced due to a low conductive density.

The polymer beads 120 may include Polymethylmethacrylate (PMMA) synthetic resin, synthetic rubber, or the like. Alternatively, the polymer beads 120 may include other polymers as well as PMMA.

The conductive powder 130 may not have a specific shape. In an example embodiment, the polymer beads 120 may include beads having a uniform shape. Alternatively, the shape of the polymer beads 120 may not be limited to a spherical shape. For example, in order to uniformly distribute the polymer beads 120 among the conductive powders 130, the polymer beads 120 may have an approximately spherical shape. In order to prevent the interruption of the arrangement of the conductive powder 130, the polymer beads 120 may have a spherical shape having a diameter of about 5 μm to about 20 μm.

Under the condition that the average diameter of the conductive powder 130 for securing conductivity may be about 30 μm, when the diameter of the polymer beads 120 may be less than 5 μm, the polymer beads 120 do not play a role of supplementing the bonding strength of the conductive powder 130 as shown in fig. 2A. When the diameter of the polymer beads 120 may be higher than 20 μm, the polymer beads 120 may reduce the bonding strength of the conductive powder 130 as shown in fig. 2B, thereby deteriorating the electrical characteristics of the conductive powder 130. In particular, when the plating process may be performed on the conductive powder 130 to increase conductivity, the large-sized polymer beads 120 may damage the plating film of the conductive powder 130.

Accordingly, when the average diameter of the polymer beads 120 may be about 20% to about 50% of the average diameter of the conductive powder 130, the polymer beads 120 may supplement the body layer 110 to improve mechanical characteristics for supporting the conductive powder 130 and enhance electrical characteristics by bonding the conductive powders 130 to each other.

Fig. 3A and 3B are sectional views illustrating restoring forces of a test socket according to example embodiments. Fig. 3A shows the conductive metal powder 130 in the bulk layer 110, and fig. 3B shows the insulating polymer beads 120 and the conductive metal powder 130 in the bulk layer 110.

Referring to fig. 3A, the conductive balls or conductive pads of the semiconductor device 102 may press the test socket 100. The body layer 110 may be elastically deformed by pressure from the semiconductor device 102. That is, shrinkage deformation may be generated in the body layer 110. When the conductive balls may not stress the test socket 100, the shrinkage deformation may still be maintained in the body layer 110. When the body layer 110 may include only the conductive metal powder 130, the body layer 110 may have high compressibility and low restoring force.

Referring to fig. 3B, when the body layer 110 may include the conductive metal powder 130 and the polymer beads 120, the polymer beads 120 may supplement elastic deformation of the body layer 110 so that the shape of the body layer 110 may be maintained after the pressure of the conductive balls.

For example, when the weight of the body layer 110 (i.e., the silicone rubber resin) may have about 100 wt%, the amount of the polymeric synthetic resin in the polymeric beads 120 may be about 20 wt% to about 40 wt%. The mixing ratio of the body layer 110 to the polymer beads 120 may be about 1:0.2, preferably about 1: 0.25.

When the amount of the polymer synthetic resin may be less than about 20% by weight with respect to the silicone rubber resin, the restoring effect may be very small. When the amount of the polymer synthetic resin may be higher than about 40 wt% with respect to the silicone rubber resin, the compression effect may be offset to lose the elastic effect.

In an example embodiment, the insulating body layer 110 and the insulating polymer beads 120 may be separated. Alternatively, a silicon-polymer elastomer may be used that comprises an insulating body layer 110 and insulating polymer beads 120 integrally formed with each other. The silicon-polymer synthetic rubber may include a silicon substrate and functional polymer beads in the silicon substrate.

When the test socket 100 may be in contact with the conductive balls or conductive pads, the silicon-polymer elastomer may serve to supplement the impact strength. The silicone rubber resin may have weak heat resistance and weak cold resistance at high and low temperatures. In contrast, the polymer synthetic resin may have strong heat resistance and strong cold resistance. Therefore, the polymer synthetic resin may be mixed with the silicone rubber resin to supplement heat resistance and cold resistance. As a result, test reliability can be improved.

In particular, the silicone rubber resin may have a high coefficient of thermal expansion. Therefore, the silicone rubber resin may deteriorate and deform at high temperatures. In contrast, a silicone rubber resin having a polymer synthetic resin may have outstanding heat resistance to suppress deformation. Although the silicone rubber resin may have weak heat resistance, the silicone rubber resin having the polymer synthetic resin may have improved thermal stability.

In addition, the silicone rubber resin may have a high volume change rate according to temperature. In particular, the silicone rubber resin can be easily deformed at a temperature of about 130 ℃. In addition, cracks may be generated in the silicone rubber resin.

Fig. 5 is a graph illustrating a thermal limit temperature resistance of a polymer according to an example embodiment.

Referring to fig. 5, no weight loss occurs in the polymer synthetic resin at a temperature of about 200 ℃. Weight loss occurs after a temperature of about 200 ℃. Therefore, the heat resistance of the polymer synthetic resin may be higher than that of silicon. Thus, it can be noted that polymeric synthetic resins can have outstanding temperature resistance.

Comparing resistance in repeated tests

Fig. 6 is a graph illustrating resistance based on the number of tests according to an example embodiment. The comparative example in fig. 6 shows the body layer 110 including only the conductive powder 130, and the example embodiment in fig. 6 shows the body layer 110 including the conductive powder 130 and the polymer beads 120.

The resistance of the test socket may increase due to repeated testing of the semiconductor device 102. Since the conductive powder 130 may be magnetically arranged in a vertical direction with a uniform rule, the flow of charges under the pressure of the conductive balls may be constant at the start of the test. However, when the test can be repeated, the arrangement of the conductive powder 130 in the body layer 110 may be disordered, thereby increasing the resistance.

In contrast, according to example embodiments, since the polymer beads 120 may be located between the conductive powders 130, disorder of the conductive powders 130 may be prevented when the conductive balls may repeatedly press the test socket 100.

Comparison of the striking force (stroke) required in the test

FIG. 7 is a graph illustrating contact force based on number of tests according to an example embodiment. The comparative example in fig. 7 shows the body layer 110 including only the conductive powder 130, and the example embodiment in fig. 7 shows the body layer 110 including the conductive powder 130 and the polymer beads 120.

To test the semiconductor device 102, the conductive balls may press against the test socket 100. The pressure of the conductive ball may require a contact force. The maximum striking force required for a depth change of about 0.2mm may be not more than about 30 gf.

Referring to fig. 7, it may be noted that the striking force of the example embodiment may be less than that of the comparative example under the same number of tests. Further, it may be noted that the striking force of example embodiments may be no greater than about 30 gf. In contrast, it is noted that the striking force of the comparative example may be not less than about 30 gf.

Comparison of the resistance at high temperature

Fig. 8 is a graph illustrating a resistance distribution at a high temperature according to an example embodiment. The comparative example in fig. 8 shows the body layer 110 including only the conductive powder 130, and the example embodiment in fig. 8 shows the body layer 110 including the conductive powder 130 and the polymer beads 120.

The resistance may increase in proportion to the temperature. In particular, when the test socket 100 may include a silicone rubber resin, the silicone rubber resin may expand according to an increase in temperature. The bonding strength of the conductive powder 130 may be decreased to increase the resistance.

When the polymer beads 120 may be mixed with the silicone rubber resin, the expansion of the silicone rubber resin may be suppressed. Accordingly, the bonding strength of the conductive powder 130 may be maintained so that the resistance does not increase with an increase in temperature. In addition, since the polymer beads 120 may maintain the bonding strength of the conductive powder 130, the conductive powder 130 may be disordered to prevent resistance deterioration.

Comparing resistance at low temperature

Fig. 4A to 4C are sectional views showing the gap variation of the conductive powder group at high and low temperatures. Fig. 4A shows a cross-sectional view of a test socket at room temperature. In fig. 4A, P1 may indicate a gap between the magnetically arranged conductive powder groups 130 g. Fig. 4B shows a cross-sectional view of a test socket at high temperature. In fig. 4B, P2 may indicate a gap between the magnetically arranged conductive powder groups 130 g. Fig. 4C shows a cross-sectional view of the test socket at low temperature. In fig. 4C, P3 may indicate a gap between the magnetically arranged conductive powder groups 130 g.

The resistance may be affected by low temperatures as well as high temperatures. Since the body layer 110 including the silicone rubber resin may shrink at a low temperature, the low temperature may affect the bonding strength of the conductive powder 120.

As shown in fig. 4B, the gap between the conductive powders 130 may be widened due to the expansion of the body layer 110 at high temperature. Therefore, the gap P2 between the conductive powder groups 130g at high temperature may be narrower than the gap P1 between the conductive powder groups 130g at room temperature.

As shown in fig. 4C, the gap between the conductive powders 130 may be narrowed due to the shrinkage of the body layer 110 at a low temperature. Therefore, the gap P3 between the conductive powder groups 130g at a low temperature may be wider than the gap P1 between the conductive powder groups 130g at a room temperature.

The gaps P1, P2, and P3 between the conductive powder groups 130g are not less than about 1mm according to temperature variation, so that contact failure may occur between the test socket 100 and the semiconductor device 102.

In contrast, when the body layer 110 may include the polymer beads 120, the polymer beads 120 may maintain the bonding strength of the conductive powder 130. Therefore, according to the temperature change, the expansion and contraction in the body layer 110 can be suppressed to reduce the change in the resistance.

Fig. 9 is a graph illustrating a resistance distribution at a low temperature according to an example embodiment. The comparative example in fig. 9 shows the body layer 110 including only the conductive powder 130, and the example embodiment in fig. 9 shows the body layer 110 including the conductive powder 130 and the polymer beads 120.

Referring to fig. 9, the comparative example may have a wide resistance distribution. Rather, example embodiments may have a concentrated resistance distribution.

According to an example embodiment, the test socket may include a conductive powder magnetically disposed in the body layer, and the polymer beads have a diameter that is no greater than about 50% of an average diameter of the conductive powder.

The restoring force of the silicon bulk layer for supporting the conductive powder can be enhanced. The restoring force of the silicon body layer, which changes due to expansion and contraction, can be compensated. As a result, the test socket may have improved characteristics.

The above-described embodiments of the present invention are intended to be illustrative, not limiting. Various alternatives and equivalents are possible. The invention is not limited by the embodiments described herein. Nor is the invention limited to any particular type of semiconductor device. Other additions, subtractions or modifications are obvious in view of the present disclosure and are intended to fall within the scope of the appended claims.

Claims

1. A test socket connected between a semiconductor device and a tester to perform electrical testing, the test socket comprising:

an insulator layer disposed between the semiconductor device and the tester;

polymer beads uniformly distributed in the insulator layer; and

a conductive powder arranged in the insulator layer to form a plurality of groups,

wherein the polymer beads are arranged between the conductive powders in the insulator layer,

wherein the polymer beads and the conductive powder respectively have spherical shapes, and

Wherein, the diameter of each polymer bead is 25% to 50% of the diameter of each conductive powder.

2. The test socket of claim 1, wherein the group comprising the conductive powder is arranged vertically relative to a surface of the insulator layer to form a conductive path in the insulator layer.

3. The test socket of claim 1, wherein the group including the conductive powder can be arranged at a position corresponding to a terminal of the semiconductor device and a terminal of the tester.

4. The test socket of claim 1, wherein the conductive powder has a diameter of 20 μm to 40 μm, and the polymer beads have a diameter of 5 μm to 20 μm.

5. The test socket of claim 1, wherein the insulator layer comprises a silicone rubber resin.

6. The test socket of claim 1, wherein the polymer beads comprise polymethylmethacrylate (PMMA) synthetic resin or synthetic rubber.

7. The test socket of claim 1, wherein the conductive powder comprises at least one of Au and Ni.

8. The test socket of claim 1, wherein a mixing ratio of the insulator layer to the polymer beads is 1:0.2 to 1:0.4.

9. The test socket of claim 1, wherein the polymer beads comprise insulating material.

10. A test socket comprising:

Silicone polymer synthetic rubber, which includes a silicone rubber resin and a polymer synthetic resin mixed with each other; and

A conductive powder group comprising conductive powder magnetically arranged in the silicon polymer synthetic rubber with uniform regularity,

wherein the polymer synthetic rubber resin and the conductive powder have spherical shapes, and

Wherein, the diameter of the polymer synthetic rubber resin is 25% to 50% of the diameter of the conductive powder.

11. The test socket of claim 10, wherein the polymer synthetic resin has a heat denaturation temperature of 200°C.

12. The test socket of claim 10, wherein a mixing ratio of the silicone rubber resin to the polymer synthetic resin is 100% by weight: 20% by weight to 40% by weight.