CN110004426A - Coating method of continuous coating system and coating obtained by method - Google Patents

Abstract

A film coating method is implemented by a continuous film coating system comprising a carrying disc and a sputtering device, wherein the sputtering device is provided with a sputtering cavity, a target unit and a power supply assembly, the power supply assembly comprises a power supply, an inductor, a high-speed switch and a super capacitor, the inductor, the high-speed switch and the super capacitor are connected in parallel with the power supply, the inductor and the sputtering cavity in parallel, and the super capacitor is connected in parallel with the sputtering cavity and the inductor in parallel. The film coating method is that a batch of objects to be coated on the carrying disc is subjected to a sputtering program in a sputtering cavity, when the high-speed switch is in an off-state, the power supply can enable the super capacitor to be fully charged in the flameout time of each period, when the high-speed switch is in a circuit on-state, the power supply can instantly discharge the target unit with the fully charged super capacitor in the discharge time of each period, sputtered target particles are instantly ionized, and a high-density and high-adhesiveness target is sputtered on the objects to be coated, each period is formed by the discharge and flameout time of the period, and the duty ratio of each period is between 0.1% and 30%.

Description

Coating method of continuous coating system and coating obtained by the method

technical field

The invention relates to a coating method, in particular to a coating method of a continuous coating system and the coating obtained by the method.

Background technique

Based on the physical vapor deposition (PVD) method in the thin film process, metal oxides or even metal nitrides can be coated with super-hard, corrosion-resistant and oxidation-resistant coatings with excellent quality, so they are widely used in mechanical components, bicycle components. and other major industries used.

For example, Taiwan Patent Case No. 539815 (hereinafter referred to as the previous case 1) discloses a chain piece with brilliant colors on the surface and a method for forming the chain piece. The chain piece with brilliant colors on the surface disclosed in the preceding case 1 has a chain piece body and a color coating unit plated on the chain piece body; wherein, the color coating unit is formed by cathodic arc discharge molding (cathodic arc discharge molding method). multilayer films prepared by arc plasma deposition. The color coating unit includes a base layer completely covering the outer surface of the link body and made of titanium nitride, zinc nitride or zirconium nitride, etc., and sequentially covering the base layer and It is a plurality of color developing layers composed of materials such as titanium oxynitride, zinc oxynitride or zirconium oxynitride.

Specifically, the manufacturing method disclosed in the previous case 1 is to first deposit a golden yellow titanium nitride (TiN) layer on the outer surface of the chain body by the cathodic arc discharge molding method as the base layer, Then, a plurality of titanium oxynitride (TiNxOy) layers are sequentially deposited on the titanium nitride layer to serve as the aforementioned color developing layers respectively. The metal (that is, the metal material of the cathode target) and the thickness of the film in the aforementioned base layer and each color-developing layer can determine the color of the coating, and with the increase of the oxygen content in each color-developing layer The color of each color rendering layer can also be changed. Taking the golden-yellow titanium nitride layer as an example, with the increase of the oxygen flow rate in the coating cavity introduced by the cathodic arc discharge forming method during the forming process, the subsequently deposited titanium oxynitride layer (that is, the color developing layer) increases. ) to appear blue.

Although the technical content disclosed in the previous case 1 can produce finished chain pieces with brilliant colors on the surface; however, the equipment used in the previous case 1 is only a single-chamber batch type furnace, which cannot be used in a single The pretreatment and deposition processes required for the finished product are directly completed in the equipment. Therefore, for the complete process of completing the finished product, the time and cost required will inevitably increase.

In addition, the Chinese Invention Patent Case No. 104451570A (hereinafter referred to as the former case 2) discloses a method for coating color films by magnetron sputtering. The color film disclosed in the previous case 2 is a tin oxide film deposited by magnetron sputtering in a vacuum chamber; wherein, the magnetron sputtering method is to bombard a static cathode tin with argon plasma Target material, so that the bombarded and sputtered metal particles are deposited on an anode substrate with a running speed of 15mm/s after dissociation by argon plasma, and the number of operations of the anode substrate is the same as the cathode tin target. There is one trip from the starting point to the ending point, and it runs 4 times. However, before depositing the tin oxide film, the substrate placed on the anode is still subjected to pretreatment outside the vacuum chamber. Therefore, the vacuum chamber disclosed in the previous case 2 still belongs to the single-chamber type batch furnace sputtering equipment, and still cannot solve the problem of time-consuming process for the complete process of completing the finished product.

In addition, regardless of the method disclosed in Case 1 or Case 2, the plasma density of the sputtered particles sputtered from the target is still insufficient; therefore, the compactness and adhesion of the coating film are also affected.

It can be seen from the above description that under the premise of solving the problem of time-consuming of the complete process, the problem of insufficient plasma density of sputtering particles is also improved to improve the compactness and adhesion of the coating, which is a problem to be solved by those skilled in the art.

SUMMARY OF THE INVENTION

The first object of the present invention is to provide a high-density and high-adhesion coating method.

The coating method of the present invention is implemented by a continuous coating system. The continuous coating system includes a carrier tray and a conveying mechanism, and also includes a loading device, a pre-processing device, a sputtering device, and a loading device along the production direction. . The loading device includes a loading cavity. The pre-processing device includes a pre-processing chamber adjacent to and communicating with the loading chamber. The sputtering device includes a sputtering chamber adjacent to and communicating with the pre-processing chamber, a target unit disposed in the sputtering chamber, and at least one power supply component. The power supply component has a power supply and an impulse circuit module connected in parallel with the power supply. The instantaneous pulse circuit module has an inductance, a high-speed switch and a super-capacitor. The high-speed switch is connected in series between the target unit and the inductor, and the super capacitor is connected in parallel with the sputtering chamber and the inductor so as to be connected in parallel with the power supply. The load-out device includes a load-out cavity adjacent to and communicated with the sputtering cavity, and the load-in cavity, the pretreatment cavity, the sputtering cavity and the load-out cavity together define a production channel. The conveying mechanism includes a driving unit, and a detent unit connected to the driving unit and located in the production channel. The carrier plate is located on the switch unit, so that the drive unit is linked with the switch unit to drive the carrier plate located on the switch unit to move in the production channel. The coating method includes the following steps: step (a), step (b), step (c), and step (d).

In the step (a), a batch of objects to be plated on the carrier plate is transferred into the loading chamber through the actuating unit to perform a heating process.

In the step (b), the batch of objects to be plated on the carrier plate is transferred into the pre-processing chamber through the stopper unit to perform a plasma cleaning process.

In step (c), the batch of objects to be plated on the carrier plate is transferred into the sputtering chamber through the stopper unit to perform sputtering through the power supply and the transient pulse circuit module of the power supply assembly In the plating process, whenever the high-speed switch is in an open circuit state, the power supply can fully charge the super capacitor within the flameout time of each cycle, and whenever the high-speed switch is in a circuit-on state, the power supply The supplier can perform instantaneous discharge on the target unit connected in series with the high-speed switch in the discharge time of each cycle together with the fully charged super capacitor, so that the sputtered target unit in the sputtering chamber is sputtered out of the target unit. The target particles can be instantly dissociated by the power provided by the power supply and the fully charged supercapacitor to sputter a target coating with high density and high adhesion on the batch of coatings.

In the step (d), the batch of objects to be plated on which the target coating film has been sputtered is carried by the carrier reel to the carrying-out cavity along the production direction to perform a cooling process.

In the coating method of the present invention, each cycle is composed of its flameout time and its discharge time, and the duty ratio defined by the discharge time and the flameout time of each cycle ranges from 0.1% to 30%.

In the coating method of the present invention, the discharge time of each cycle is between 10 μs and 500 μs; the flameout time of each cycle is between 1840 μs and 10000 μs.

In the coating method of the present invention, the target voltage and peak current provided by the power supply together with the super capacitor to the target unit are at least greater than 500V and at least greater than 100A, respectively.

In the coating method of the present invention, when the batch of objects to be plated performs the sputtering process in the sputtering chamber, the braking unit causes the carrier plate to move back and forth in the sputtering chamber at least once.

The second object of the present invention is to provide a coating film with high density and high adhesion.

The coating film of the present invention is prepared by the above-mentioned coating method; wherein, the batch of objects to be plated is a plurality of link body, and each link body and the coating film sputtered on the corresponding link body respectively Together they form a chain.

The beneficial effect of the present invention is that: the batch of objects to be coated can not only perform the pretreatment and the sputtering process in a single complete process through the continuous coating system to obtain a finished product, but also the sputtering device can also be supplied by the power supply The combination of the device and the supercapacitor of the instantaneous pulse circuit module can discharge the target unit instantaneously within the discharge time of each cycle, so that the sputtered target particles can pass through the power supply and the fully charged supercapacitor. The power provided by the capacitor is instantly dissociated, thereby increasing the plasma density and sputtering a target coating with high density and high adhesion on the batch of coatings.

Description of drawings

Other features and effects of the present invention will be clearly presented in the embodiments with reference to the drawings, wherein:

1 is a schematic front view illustrating a continuous coating system used to implement an embodiment of the coating method of the present invention;

2 is a schematic side view illustrating the connection relationship among a sputtering chamber, a target unit and three power supply components of a sputtering device of the continuous coating system of the present invention;

3 is a relationship diagram between a current versus time graph and a schematic diagram of the sputtering apparatus, illustrating the DC power supply when a high-speed switch in the power supply assembly of the embodiment of the present invention is in a circuit conduction In cooperation with the fully charged super capacitor, the target unit is instantly discharged within a discharge time (T _on ) of each cycle (T);

FIG. 4 is a relationship diagram continuing FIG. 3 , illustrating that the supercapacitor of this embodiment of the present invention performs the instantaneous discharge of the target unit within the discharge time (T _on ) until the power of the supercapacitor is exhausted;

5 is a color image diagram illustrating the target particle plasma generated by an embodiment of the coating method of the present invention;

FIG. 6 is a relationship diagram continuing FIG. 4, illustrating a state in which the high-speed switch of the embodiment of the present invention is in a circuit off state;

FIG. 7 is a relationship diagram continuing FIG. 6 , illustrating that when the high-speed switch according to the embodiment of the present invention is in the circuit off state, the DC power supply can have a flameout time (T _off ) in each cycle (T). Charge the super capacitor inside;

FIG. 8 is a relationship diagram continuing FIG. 7, illustrating that the DC power supply according to this embodiment of the present invention can fully charge the super capacitor within the flame-off time (T _off ) of each cycle (T);

9 is a color image diagram illustrating a batch of gem green chain pieces obtained by a specific example 1 (E1) of the coating method implemented by the continuous coating system of the present invention;

FIG. 10 is a color image diagram illustrating a batch of azure chains obtained by a specific example 2 (E2) of the coating method implemented by the continuous coating system of the present invention;

FIG. 11 is a color image diagram illustrating a batch of yang orange gold chain pieces obtained by a specific example 3 (E3) of the coating method implemented by the continuous coating system of the present invention;

12 is a color image diagram illustrating a batch of blue-violet chains obtained by a specific example 4 (E4) of the coating method implemented by the continuous coating system of the present invention;

FIG. 13 is a color image diagram illustrating a batch of purple-red chains produced by a specific example 5 (E5) of the coating method implemented by the continuous coating system of the present invention; and

14 is a color image diagram illustrating the finished chain assembled by the blue-violet chain pieces of the specific example 4 (E4) of the present invention.

Detailed ways

Before the present invention is described in detail, it should be noted that in the following description, similar elements are designated by the same reference numerals.

<Detailed Description of Invention>

Referring to FIGS. 1 and 2, a continuous coating system used for implementing an embodiment of the coating method of the present invention includes a carrier tray 5 and a conveying mechanism 6, and also includes a carrier along a production direction X Device 1 , a pre-processing device 2 , a sputtering device 3 , and a loading device 4 .

The loading device 1 includes a loading cavity 11 having an inlet end 10 .

The pre-processing device 2 includes a pre-processing chamber 21 adjacent to and communicating with the loading chamber 11 .

The sputtering device 3 includes a sputtering chamber 31 adjacent to and communicating with the pre-processing chamber 21 and grounded, a target unit 32 disposed in the sputtering chamber 31 , and a first power supply The supply unit 33 , a second power supply unit 34 , and a third power supply unit 35 . In this embodiment of the present invention, the target unit 32 has a first target 321, a second target 322, and a third target 323 spaced apart from each other, and the first target 321, the third target The two targets 322 and the third target 323 are respectively electrically connected to the first source supply component 33 , the second power supply component 34 and the third power supply component 35 , and the targets 321 and 322 , 323 are a titanium target (Ti target).

In addition, each power supply assembly 33, 34, 35 (see FIG. 2) has a DC power supply (DC power supply) 331, 341, 351, and a parallel connection to the corresponding DC power supply 331, 341, 351 Instantaneous pulse circuit modules 332, 342, 352. Each instantaneous pulse circuit module 332, 342, 352 has an inductor 3321, 3421, 3521, a high-speed switch 3322, 3422, 3522, and a super capacitor 3323, 3423, 3523. The high-speed switches 3322, 3422, and 3522 are connected in series between the corresponding targets 321, 322, and 323 and the inductors 3321, 3421, and 3521, and the super capacitors 3323, 3423, and 3523 are connected in parallel with the sputtering chamber 31 and the The corresponding inductors 3321 , 3421 and 3521 are connected in parallel with the corresponding DC power supplies 331 , 341 and 351 respectively.

The carrying-out device 4 includes a carrying-out cavity 41 adjacent to and communicating with the sputtering cavity 31 and having an outlet end 40 , and the carrying-out cavity 11 , the pre-processing cavity 21 , and the sputtering cavity 31 and the load-out cavity 41 together define a production channel C.

The conveying mechanism 6 includes a driving unit (not shown), and a detent unit 61 connected to the driving unit and located in the production channel C. As shown in FIG. The carrier plate 5 is located on the latching unit 61 , and the driving unit is linked with the latching unit 61 to drive the tray 5 located on the latching unit 61 to move in the production channel C. FIG. The detent unit 61 may be a belt roller assembly or a gear assembly. The transmission mechanism 6 belongs to the prior art, and is not the technical focus of the present invention, and will not be repeated here.

It should be added that the continuous coating system of this embodiment of the present invention can actually include an upstream buffer device (not shown) and a downstream buffer device (not shown), and the upstream buffer device has a temporary Connected to the upstream buffer cavity between the pre-processing cavity 21 and the sputtering cavity 31 , the downstream buffer device has a downstream buffer cavity adjacent to the sputtering cavity 31 and the load-out cavity 41 . Therefore, the detent unit 61 can drive the carrier plate 5 to reciprocate between the upstream buffer chamber and the downstream buffer chamber.

In this embodiment of the present invention, the high-speed switches 3322 , 3422 and 3522 of the instantaneous pulse circuit modules 332 , 342 and 352 are an insulated gate bipolar transistor (IGBT for short).

1 and 2 again, the present invention implements the coating method of this embodiment by using the above-mentioned continuous coating system, which includes the following steps: a step (a), a step (b), a step (c), and a step (d).

In step (a), a batch of objects to be plated (not shown) positioned on the carrier tray 5 is transferred to the loading cavity 11 via the stopper unit 61 to perform a heating process.

In step (b), the batch of objects to be plated on the carrier plate 5 is transferred into the pre-processing chamber 21 through the stopper unit 61 to perform a plasma cleaning procedure. In the coating method of this embodiment of the present invention, an argon (Ar) plasma cleaning procedure is applied to the batch of objects to be plated on the carrier plate 5 .

In step (c), the batch of objects to be plated on the carrier plate 5 is transferred into the sputtering chamber 31 through the detent unit 61 , so as to pass the DCs of the power supply components 33 , 34 , and 35 . The power supplies 331, 341, and 351 and the instantaneous pulse circuit modules 332, 342, and 352 perform a sputtering process.

Please refer to FIG. 3 , FIG. 4 and FIG. 5 . Specifically, when each of the high-speed switches 3322 , 3422 , and 3522 is in a circuit-on state, each of the DC power supplies 331 , 341 , and 351 can work together with The respective fully charged supercapacitors 3323, 3423, 3523 are connected in series to the targets 321 of the respective corresponding high-speed switches 3322, 3422, 3522 within a discharge time (T _on ) of each cycle (T). , 322 and 323 are discharged for an instant, so that the sputtered target particles 321, 322 and 323 in the sputtering chamber 31 can pass through the corresponding DC power supplies 331, 341 and 351. The power provided by the fully charged supercapacitors 3323, 3423, and 3523 is instantly dissociated into a blue-colored and dissociated target particle plasma 320, thereby increasing the plasma density of the target particle plasma. A target coating film with high density and high adhesion is sputtered on the object to be plated (not shown in the figure).

In addition, referring to FIGS. 6 , 7 and 8 , whenever each of the high-speed switches 3322 , 3422 , and 3522 is in a circuit-off state, each of the DC power supplies 331 , 341 , and 351 is connected to each of the supercharged power supplies 331 , 341 , and 351 . Capacitors 3323, 3423, 3523 stop supplying power to their corresponding targets 321, 322, 323, so that the dissociated target particle plasma 320 shown in FIGS. 3 and 4 disappears, and each DC power supply 331, 341, and 351 can fully charge their corresponding supercapacitors 3323, 3423, and 3523 within a flame-off time (T _off ) of each cycle (T), so that in the next cycle (T) the discharge time (T _on ) ) again to each target 321, 322, 323 to perform the next instantaneous discharge (as shown in FIG. 3, FIG. 4 and FIG. 5).

In the coating method of this embodiment of the present invention, each cycle (T) is composed of its flame-off time (T _off ) and its discharge time (T _on ), and each high-speed switch 3322, 3422, 3522 (ie, IGBT) It is electrically connected to a computer to set the cycle (T), discharge time (T _on ) and flame-off time (T _off ) of its embodiment through its microprocessor.

Referring to FIGS. 3 , 4 and 5 again, more specifically, when the high-speed switches 3322 , 3422 and 3522 are in the on state of the circuit, the DC power supplies 331 , 341 and 351 can Together with the fully charged supercapacitors 3323, 3423, 3523, within the discharge time (T _on ) of each cycle (T), the first target 321, The second target 322 and the third target 323 provide a target voltage (Vt) and a target current (It), so that the connection between the grounded sputtering chamber 31 and each of the targets 321 , 322 and 323 A potential difference (ΔV) is generated, so that the electric power provided by each of the DC power supplies 331, 341, 351 and the fully charged super capacitors 3323, 3423, 3523 is instantly greatly increased, thereby increasing the target particle plasma 320 the plasma density. The target current corresponding to the aforementioned target current (It) reaching the maximum power is the peak current (peak current, hereinafter referred to as Ip).

Preferably, a duty cycle (T _on /T ) defined by the discharge time (T _on ) and the flame-off time (T _off ) of each cycle (T) is between 0.1% to 30%; each DC power supply 331, 341, 351 together with the corresponding supercapacitors 3323, 3423, 3523 provide the target voltage (Vt) and peak current to the corresponding targets 321, 322, 323 respectively (Ip) is at least greater than 500V and at least greater than 100A, respectively; when the batch of objects to be plated performs the sputtering process in the sputtering chamber 31 , the control unit 61 is used to make the carrier plate 5 in the sputtering chamber Move back and forth within 31 at least once.

It should be further explained here that when the discharge time (T _on ) of each cycle (T) is insufficient, the peak current (Ip) provided to each target 321 , 322 , 323 cannot reach 100A. When the discharge time (T _on ) of (T) is too large, the capacitance of each super capacitor 3323, 3423, 3523 will be exhausted, so that the peak current (Ip) provided to each target material 321, 322, 323 will decrease; , when the flame-off time (T _off ) of each cycle (T) is insufficient, the charging time of each supercapacitor 3323, 3423, 3523 is insufficient, so that the power cannot be fully charged. When the flame-off time (T _off ) of each cycle (T) is too long It will also affect the growth rate of the coating. Therefore, preferably, the discharge time (T _on ) of each period (T) is between 10 μs and 500 μs, and the extinguishing time (T _off ) of each period (T) is between 1840 μs and 10000 μs.

In step (d), the batch of objects to be plated on which the target coating film has been sputtered is brought along the production direction X by the carrier plate 5 to the carrying-out cavity 41 to perform a cooling process, and the cooling process is completed After the procedure, the batch of objects to be plated on which the target coating film is sputtered is driven by the detent unit 61 to drive the carrier plate 5 to be removed from the outlet end 40 of the carrier-out cavity 41 .

An embodiment of the coating film of the present invention is prepared by the above-mentioned embodiment of the coating method; wherein, the batch of objects to be plated is a plurality of link bodies, and each link body is sputtered on its corresponding The coatings on the chain piece together form a chain piece.

Preferably, after the chain pieces are assembled into a chain, the coating films sputtered on the body of each chain piece will not fall off.

<Specific example 1 (E1)>

A specific example 1 (E1) of the coating method of the present invention is implemented by the above-mentioned embodiment of the continuous coating system.

Referring again to FIG. 1 , first, a group of chain piece bodies (not shown) are disposed on the carrier plate 5 to drive the carrier plate 5 to be conveyed from the inlet end 10 of the loading cavity 11 through the latching unit 61 . A heating process is performed into the loading cavity 11 , and the temperature of the heating process of the specific example 1 (E1) is 150-350°C.

After the heating process is completed, the batch of chain pieces on the carrier plate 5 is transferred into the pre-processing chamber 21 through the detent unit 61, and the flow rate of the gas introduced into the pre-processing chamber 21 is: 280sccm of argon gas (Ar), while providing 800W radio frequency (rf) electric power to the counter electrode plate in the pretreatment chamber 21, so that the pretreatment chamber 21 is at a working pressure of 4×10 ⁻² Torr (working pressure). Under pressure), an Ar plasma cleaning procedure maintained for 120 seconds was performed on the chain body of the batch.

Next, the batch of link bodies on the carrier plate 5 is transferred into the sputtering chamber 31 through the braking unit 61 to pass through the first power supply component 33 , the second power supply component 34 , the first power supply component 34 , and the first power supply component 34 . The DC power supplies 331 , 341 , and 351 of the three power supply components 35 and their corresponding instantaneous pulse circuit modules 332 , 342 and 352 perform a sputtering process of a multilayer film. In principle, the sputtering process of the multilayer film of the specific example 1 (E1) of the present invention sequentially includes a Ti layer sputtering process, a TiN layer sputtering process, and a TiNxOy layer sputtering process.

Specifically, the Ti layer sputtering process is to introduce Ar with a gas flow rate of 300 sccm into the sputtering chamber 31, and at the same time set the cycle (T), The flame-out time (T _off ) and the discharge time (T _on ) were 2075 μs, 2000 μs and 75 μs, respectively. When each high-speed switch 3322, 3422, 3522 is in the state of power _off of the circuit, each DC power supply 331, 341, 351 can make the corresponding super capacitor 3323, 3423, 3523 are fully charged; whenever each high-speed switch 3322, 3422, 3522 is in the state of the circuit conducting, each DC power supply Within each discharge time (T _on ) of 75 μs, the corresponding first target (hereinafter referred to as TPT1) 321, the second target (hereinafter referred to as TPT2) 322 and the third target (hereinafter referred to as TPT3) 323 are provided respectively. Target voltages (Vt) of 933V, 943V, and 713V, and peak currents (Ip) of 672A, 752A, and 705A, so that the sputtering chamber 31 sputters the Ti particles of the targets 321, 322, and 323. The electric power (6270W, 7050W, 5030W) provided by each DC power supply 331, 341, 351 and each fully charged super capacitor 3323, 3423, 3523 can be instantly dissociated into target (Ti) particle plasma 320, and The working pressure of the sputtering chamber 31 is set to 5.8×10 ^-3 Torr, so that a Ti layer is sputtered on the chain bodies of the batch. In the specific example 1 (E1) of the present invention, when the batch of link bodies performs the Ti layer sputtering process in the sputtering chamber 31 , the control unit 61 is used to make the carrier plate 5 in the sputtering chamber 31 . The cavity 31 moves back and forth twice at a moving speed of 8-20mm/sec, and the temperature of the batch of chain pieces is 280°C.

The TiN layer sputtering process of the specific example 1 (E1) is substantially the same as the Ti layer sputtering process, the difference is that nitrogen (N ₂ ) is further introduced into the sputtering cavity 31 , and Ar and N ₂ The overall gas flow rate is 300 sccm. Similarly, whenever each high-speed switch 3322, 3422, 3522 is in the state of power off of the circuit, each DC power supply 331, 341, 351 can make the corresponding super capacitor 3323, 3423, 3523 fully charged; whenever When each of the high-speed switches 3322, 3422, and 3522 is in the state of conducting the circuit, each of the DC power supplies 331, 341, and 351 together with the fully charged supercapacitors 3323, 3423, and 3523 can pair the corresponding targets 321, 352, and 3523 with each other. 322 and 323 respectively provide their target voltage (Vt) and their peak current (Ip), so that the _N2 in the sputtering chamber 31 and the Ti particles sputtered out of the targets 321, 322 and 323 can pass through each DC The electric power provided by the power supplies 331, 341, 351 and the fully charged supercapacitors 3323, 3423, 3523 is dissociated instantaneously, and the working pressure of the sputtering chamber 31 reaches 4.5×10 ^-3 Torr, thereby A TiN layer is sputtered on each Ti layer.

The sputtering process of the TiNxOy layer of the specific example 1 (E1) is substantially the same as the sputtering process of the TiN layer, the difference is that oxygen (O ₂ ) is further introduced into the sputtering cavity 31 , and Ar, N The overall gas flow rate of ₂ and _O2 is 500sccm. Similarly, whenever each high-speed switch 3322, 3422, 3522 is in the state of power off of the circuit, each DC power supply 331, 341, 351 can make the corresponding super capacitor 3323, 3423, 3523 fully charged; whenever When each of the high-speed switches 3322, 3422, and 3522 is in the state of conducting the circuit, each of the DC power supplies 331, 341, and 351, together with the fully charged supercapacitors 3323, 3423, and 3523, can connect to the corresponding targets 321, 352, and 3523. 322 and 323 respectively provide the target voltage (Vt) and its peak current (Ip), so that the N ₂ and O ₂ in the sputtering chamber 31 and the Ti particles sputtered out of the targets 321 , 322 and 323 can be The electric power provided by the DC power supplies 331, 341, 351 and the fully charged supercapacitors 3323, 3423, 3523 is instantly dissociated, and the working pressure of the sputtering chamber 31 reaches 4.6×10 ⁻³ Torr, so that a TiNxOy layer is sputtered on each TiN layer, and a Ti/TiN/TiNxOy multilayer film is formed on each link body.

Finally, each link body sputtered with the Ti/TiN/TiNxOy multilayer film is brought along the production direction X by the carrier plate 5 to the carrier-out cavity 41 to perform a cooling process, and the cooling process is completed Then, it is taken out of the load-out cavity 41 from the outlet end 40 to produce a batch of sapphire green links (see FIG. 9 ).

The detailed process parameters of the coating method of the specific example 1 (E1) of the present invention are summarized in Tables 1. to 4. below.

Table 1.

Table 2.

table 3.

Table 4.

<Example 2 (E2)>

A specific example 2 (E2) of the coating method of the present invention is substantially the same as the specific example 1 (E1), and its specific process parameters are summarized in Tables 5. to 8. below. In addition, after implementing the coating method of the specific example 2 (E2) of the present invention, a batch of azure chain pieces (see FIG. 10 ) is obtained. table 5.

Table 6.

Table 7.

Table 8.

<Example 3 (E3)>

A specific example 3 (E3) of the coating method of the present invention is substantially the same as the specific example 1 (E1), and its specific process parameters are summarized in Tables 9. to 12. below. In addition, after implementing the coating method of the specific example 3 (E3) of the present invention, a batch of yang orange gold chain pieces (see FIG. 11 ) is obtained.

Table 9.

Table 10.

Table 11.

Table 12.

<Example 4 (E4)>

A specific example 4 (E4) of the coating method of the present invention is substantially the same as the specific example 1 (E1), and its specific process parameters are summarized in Table 13. to Table 16. below. In addition, after implementing the coating method of the specific example 4 (E4) of the present invention, a batch of blue-violet chain pieces (see FIG. 12 ) is obtained.

Table 13.

Table 14.

Table 15.

Table 16.

<Specific example 5 (E5)>

A specific example 5 (E5) of the coating method of the present invention is substantially the same as the specific example 1 (E1), and its specific process parameters are summarized in Tables 17. to 20. below. In addition, after implementing the coating method of the specific example 5 (E5) of the present invention, a batch of purple-red chain pieces (see FIG. 13 ) is obtained.

Table 17.

Table 18.

Table 19.

Table 20.

The applicant further assembled the batch of blue-violet chain pieces obtained by the coating method of the above-mentioned specific example 4 (E4) into a chain as shown in FIG. 14 . It can be seen from FIG. 14 that after the blue-violet chain pieces are assembled into the chain, the multilayer film sputtered on each chain piece body does not fall off, and each chain piece still shows a blue-violet multilayer film.

As can be seen from the detailed description of the present invention and the description of each specific example, the present invention is electrically connected to the DC power supply units 331 , 341 , 351 in the power supply components 33 , 34 , and 35 when the sputtering process is carried out. When the instantaneous pulse circuit modules 332, 342, and 352 of the corresponding DC power supplies 331, 341, and 351 respectively force the high-speed switches 3322, 3422, and 3522 to be turned off, the DC power supplies 331, 341 , 351 and the supercapacitors 3323, 3423, 3523 depleted of power can stop supplying power to the corresponding targets 321, 322, 323, and the DC power supplies 331, 341, 351 in each cycle (T) The corresponding super capacitors 3323, 3423, 3523 are fully charged within the flame-off time (T _off ), so that when the circuit is turned on next time (on), the DC power supplies 331, 341, 351 can be used together with the fully charged capacitors. Each supercapacitor 3323, 3423, 3523 provides doubled electric power to the corresponding targets 321, 322, 323 within the discharge time (T _on ) of its period (T), so that the sputtering cavity 31 has a double electric power. The target particles sputtered out of each target 321, 322, 323 can be instantly dissociated into blue-colored and dissociated target particle plasma 320 by the provided electric power, thereby improving the target particle plasma 320. Plasma density and sputtering a high-density and high-adhesion target coating on the batch of coatings.

In addition, the continuous coating system is also equipped with the pre-processing device 2 before the sputtering device 3, and the batch of objects to be plated (eg, the chain body of each specific example) is still The carrier tray 5 mounted thereon and carrying the batch of objects to be plated can be directly transferred into the pre-processing chamber 21 through the control unit 61, so as to execute the pre-processing procedure (eg, each A specific example of the argon plasma cleaning process) and the sputtering process, and thereby solve the problem of time-consuming process.

To sum up, the coating method performed by the continuous coating system of the present invention and the coating obtained by the method can not only complete all the procedures in the same complete process to obtain the finished product, but also the plasma generated in the sputtering process. The density is high, and a coating film with high density and high adhesion can also be sputtered on the batch to be plated, so the object of the present invention can be surely achieved.

The above are only examples of the present invention, and should not limit the scope of implementation of the present invention, that is, any simple equivalent changes and modifications made according to the claims of the present invention and the contents of the description are still within the scope of the present invention. scope of the present invention.

Claims (5)

1. a kind of film plating process is implemented by continous way coating system, which includes load plate and transmission Mechanism, and also include device for loading, pretreating device, sputtering unit along production mode reform, and set out device:

The device for loading includes being loaded into cavity；

The pretreating device includes adjacent and in communication with the pre-treatment cavity of the loading cavity；

The sputtering unit include adjacent and in communication with the sputter cavity of the pre-treatment cavity, be set to the intracorporal target of sputter chamber Unit, and an at least power supply assembly, which has power supply unit, and is parallel to the power supply unit Momentary pulse circuit module, the momentary pulse circuit module have inductance, high-speed switch and super capacitor, high-speed switch series connection Between the target unit and the inductance, and the super capacitor be parallel to the sputter cavity and the inductance with the power supply unit simultaneously Connection, and the high-speed switch of the momentary pulse circuit module is insulation lock bipolar transistor；

It includes adjacent and in communication with the cavity that sets out of the sputter cavity that this, which sets out device, and the loading cavity, the pre-treatment cavity, The sputter cavity and this set out cavity common definition go out produce channel；

The transport mechanism includes driving unit, and the stopper unit for being connected to the driving unit and being located in the production channel；And

The load plate is located on the stopper unit, drives position in the stopper unit to interlock the stopper unit by the driving unit On the load plate moved in the production channel；

It is characterized in that the film plating process comprises the steps of:

Step (a), to be plated object of a collection of position on the load plate is transferred into the loading cavity through the stopper unit executes heating Program；

Step (b), this batch of object to be plated on the load plate are transferred into the pre-treatment cavity through the stopper unit to execute Plasma cleaning procedure；

Step (c), this batch of object to be plated on the load plate are transferred into the sputter cavity through the stopper unit by being somebody's turn to do The power supply unit of power supply assembly executes sputter program with the momentary pulse circuit module, at the high-speed switch When the state of circuit breaker, which can enable the super capacitor at full charge within the burnout time in each period, When the high-speed switch is in the state of circuit conducting, which can exist together with through the super capacitor at full charge It sparks in the discharge time in each period to the target unit for being connected serially to the high-speed switch, to enable the sputter cavity The interior target particle for being sputtered the target unit can be by the power supply unit and through the super capacitor institute at full charge The power moment of offer is by freeization in sputter high compactness on this batch of object to be plated and the target plated film of high adhesion；And

Step (d), sputtered this batch of object to be plated for having the target plated film is to take to this by the load plate along the production mode reform to set out chamber Body is to execute cooling process；

Wherein, each period was made of its burnout time and its discharge time；And

Wherein, the duty ratio that discharge time and the burnout time through each period are defined is between 0.1% to 30%.

2. film plating process according to claim 1, it is characterised in that: the discharge time in each period is between 10 μ s to 500 μ s Between；The burnout time in each period is between 1840 μ s between 10000 μ s.

3. film plating process according to claim 2, it is characterised in that: the power supply unit is supplied to together with the super capacitor The target voltage and peak point current of the target unit are respectively at least more than 500V and at least more than 100A.

4. film plating process according to claim 3, it is characterised in that: this batch of object to be plated is splashed in executing this in the sputter cavity It is to enable the load plate in moving back and forth in the sputter cavity at least one time by the stopper unit when plating program.

5. a kind of plated film, it is characterised in that: be according to claim 1 to obtained by film plating process described in 4 any claims； Wherein, this batch of object to be plated is multiple chain piece ontologies, and each chain piece ontology and sputter are in the plating on respectively corresponding chain piece ontology Film collectively forms chain piece.