CN109994050A - A Micro LD Device Based on VCSEL Technology - Google Patents

Abstract

The invention discloses a Micro LD device based on VCSEL technology. A MOS integrated circuit (active matrix) is controlled by a computer, and the MOS integrated circuit can separately control each VCSEL vertical cavity surface emitting laser diode switch in a tiny laser diode array. And strength and weakness, and finally form an image. Compared with Micro LED, Micro LD has greater light intensity per unit area, better directivity and better coherence, and has broader application prospects in the industrial field and display field.

Description

A Micro LD Device Based on VCSEL Technology

technical field

The present invention relates to a Micro LD device based on VCSEL technology.

Background technique

In recent years, Micro LED technology has made rapid progress, and its application in the display field and industrial field has exploded. And obtained huge technology investment from Apple, Samsung, BOE and other large enterprises. Micro LED technology, namely LED miniaturization and matrix technology. It refers to a high-density and tiny-sized LED array integrated on a chip. For example, each LED pixel of an LED display can be addressed and driven individually. That is to say, Micro LED technology is to array tiny LED chips on an integrated power supply circuit, and use the integrated power supply circuit to individually control the switching and brightness of each Micro LED particle, and finally form the required two-dimensional graphics.

Since the tiny LED particles in the Micro LED emit light at 360°, the divergence angle is converged through the reflective layer, reflective cup, microlens, etc., but the final divergence angle is still very large. In practical applications, it is often necessary to generate sufficient light intensity on the active surface, and mechanisms such as reflective layers and reflective cups that converge the divergence angle will greatly reduce the light efficiency of LEDs. At the same time, higher requirements are also placed on the light intensity per unit area in practical applications.

In order to solve the above problems, the applicant of the present invention proposes, for the first time in the world, a VCSEL-based MicroLD technology as an alternative solution for the next-generation display and industrial applications of Micro LED technology. Vertical Cavity Surface Emitting Laser Diodes (VCSEL, Vertical-Cavity-Surface-Emitting-Laser), they emit perpendicular to the surface of the wafer, and the resonator axis is parallel to the surface of the PN junction. It can be understood that VCSELs are all diode lasers whose emission direction is perpendicular to the cavity plane. This can in particular be a surface-emitting laser whose resonator length is less than the thickness of the active region, a surface-emitting laser whose resonator is elongated as a whole, or a surface-emitting laser with an external or a coupled resonator. Micro LD technology, that is, micro laser diode matrix technology, that is, the miniaturization and matrixing technology of LD (Laser Diode laser diode). Micro LD technology refers to the integration of high-density and tiny-sized LD arrays on a Micro LD chip, so that each LD pixel can be addressed and individually driven to light up. VCSEL-based Micro LD technology refers to integrating a high-density micro-sized VCSEL array on a Micro LD chip, and making each VCSEL pixel addressable and individually driven to light up.

Compared with Micro LED, the light intensity per unit area of Micro LD can be increased by two orders of magnitude, and the divergence angle is converged from the 180° light emission of LED to within 30°, or even within 5°. Micro LD particles can use a single-mode laser, and the outgoing light of each LD particle has better coherence and more consistent polarization state.

SUMMARY OF THE INVENTION

The problem to be solved by the present invention is that a Micro LD device based on VCSEL technology can finally obtain a high-density and tiny-sized VCSEL array integrated on a Micro LD chip, so that each VCSEL pixel can be addressed and individually driven to light up. , and then form an arbitrary optical pattern of massive pixels. Finally, the optical performance of devices that exceed traditional Micro LEDs and other light sources, other display devices, and other exposure devices is obtained.

The invention includes: component (1) substrate, component (2) MOS integrated circuit, component (3) VCSEL array (full name: VCSEL, Vertical-Cavity-Surface-Emitting-Laser, Chinese name vertical cavity surface emitting laser diode), The component (4) external control system; through the component (4) the external control system can independently address the control component (2) the component (22) on the MOS integrated circuit the power supply status of each electrode of the electrode array, and then through the control component (22) The power supply of each electrode in the electrode array independently controls each component (31) VCSEL to emit light and extinguish, and through the controllable each component (31) VCSEL to emit light and extinguish, a desired specific laser pattern is finally formed.

The substrate material of the component (1) is silicon-based or glass-based.

The component (2) MOS integrated circuit (MOS full name Metal Oxide Semi-conductor Chinese Metal Oxide Semiconductor), the component (2) MOS integrated circuit includes PMOS (P-channel Metal Oxide Semiconductor, P-channel metal oxide semiconductor) , NMOS (N-channel Metal Oxide Semiconductor, N-channel metal oxide semiconductor) and CMOS (Complement Metal Oxide Semiconductor, compound complementary metal oxide semiconductor) and other types.

The surface of the component (2) MOS integrated circuit contains C components (21) pins (C≥1) connected to the external control system of the component (4), and the electrode array of the component (22) is connected to the VCSEL array of the component (3) and is connected to the external control system of the component (4). Powers the component (3) VCSEL array. The pins of the component (21) can be anywhere on the MOS integrated circuit of the component (2).

The component (2) MOS integrated circuit contains a multi-layer circuit structure, the surface of the component (2) MOS integrated circuit contains an electrode array of the component (22), and each electrode in the electrode array of the component (22) can be independently addressed and independently controlled Current switch, each electrode has its corresponding independent drive circuit, and the drive current is provided by the thin film transistor.

The electrode array of the component (22) has a total of m rows (m is an integer greater than 1) and n columns (n is an integer greater than 1), a total of m*n electrodes and are arranged in a rectangular shape, that is, m rows are arranged with an axis M It forms an included angle of 90 degrees with the arrangement axis N of the n columns.

The component (3) VCSEL array has a total of A rows (A is an integer greater than 1) B columns (A is an integer greater than 1) components (31) VCSELs, and a total of A*B components (31) VCSELs are arranged in a rectangular shape , that is to say, the arrangement axis of row A and the arrangement axis of column B form an included angle of 90 degrees.

The laser emission direction of the component (31) VCSEL is perpendicular to the substrate plane of the component (1); the laser wavelength range is greater than or equal to 350 nanometers and less than or equal to 890 nanometers; the side length of the component (31) VCSEL is greater than or equal to 500 nanometers and less than or equal to 500 micrometers.

The number of m rows in the electrode array of the component (22) is m≥the number A of the A rows of the component (3) VCSEL array (m≥A), and the number of n columns in the electrode array of the component (22) is n≥the component (3) The number B of B columns of the VCSEL array (n≧B). That is, each component (31) VCSEL may be connected to one or more electrodes in the component 22 electrode array.

The external control system of the component (4) is a control system capable of converting graphic digital signals into required electrical signals; the external control system of the component (4) is connected to the electrodes on the electrode array of the component (22) through a plurality of lead wires of the components (41). Each electrode, and a control system capable of independently controlling the power supply state of each electrode on the electrode array of the component (22).

Description of drawings

Figure 1 is a device diagram of a Micro LD based on VCSEL technology

Figure 2 is a 45° view of the MOS integrated circuit

Figure 3 is a front view of a MOS integrated circuit

Figure 4 is a 45° view of the VCSEL array

Figure 5 is a front view of the VCSEL array

It should be understood that after reading the content of the present invention, those skilled in the art can make various changes or modifications to the present invention, and these equivalent forms are also within the scope defined by the appended claims of the present application.

Claims (10)

1. a kind of device of the Micro LD based on VCSEL technology includes: component (1) substrate, component (2) MOS integrated circuit, portion Part (3) VCSEL array (full name: VCSEL, Vertical-Cavity-Surface-Emitting-Laser, Chinese name vertical cavity Surface-emission laser diode), component (4) external control system；Pass through the independently addressable control unit of component (4) external control system Each electrode power supply state of component (22) electrod-array on part (2) MOS integrated circuit, and then pass through control unit (22) The power supply independent control of each of electrod-array electrode each component (31) VCSEL shines and extinguishes, by controllable Each component (31) VCSEL shines and extinguishes the specific laser pattern needed for finally forming.

2. component (1) substrate according to claim 1, which is characterized in that component (1) substrate material uses silicon substrate or glass Base.

3. component (2) MOS integrated circuit according to claim 1, which is characterized in that it is characterized by: component (2) MOS Integrated circuit (MOS full name Metal Oxide Semi-conductor Chinese Metal-Oxide Semiconductor), component (2) MOS collection At circuit include PMOS (P-channel Metal Oxide Semiconductor, P-channel metal-oxide-semiconductor), NMOS (N-channel Metal Oxide Semiconductor, N-channel metal-oxide semiconductor (MOS)) and CMOS Types such as (Complement Metal Oxide Semiconductor, compound complementary metal oxide semiconductors).

4. component (2) MOS integrated circuit according to claim 1, which is characterized in that component (2) MOS integrated circuit surface It is connect containing C component (21) pin (C >=1) with component (4) external control system, contains component (22) electrod-array and component (3) VCSEL array is connected and is the power supply of component (3) VCSEL array.Component (21) pin can be in component (2) MOS integrated circuit Any position.

5. component (2) MOS integrated circuit according to claim 1, which is characterized in that component (2) MOS integrated circuit contains Multilayer circuit structure, component (2) MOS integrated circuit surface contain component (22) electrod-array, in component (22) electrod-array Each electrode is independently addressable and independent control current switch, each electrode have its corresponding self-powered circuit, driving Electric current is provided by thin film transistor (TFT).

6. component (22) electrod-array according to claim 4, which is characterized in that component (22) electrod-array shares m row (m is the integer greater than 1) n column (n is the integer greater than 1), amount to m*n electrode and are in rectanglar arrangement, that is to say, that the arrangement of m row Axis M and n column arrangement axis N is in 90 degree of angles.

7. component (3) VCSEL array according to claim 1, which is characterized in that component (3) VCSEL array shares A row (A is greater than 1 integer) B column (A is greater than 1 integer) a component (31) VCSEL, amounting to A*B component (31) VCSEL is in square Shape arrangement, that is to say, that it is in 90 degree of angles that A row, which arranges axis and B column arrangement axis,.

8. component (31) VCSEL according to claim 7, which is characterized in that the Laser emission direction of component (31) VCSEL Perpendicular to component (1) substrate plane；Laser wavelength range is more than or equal to 350 nanometers and is less than or equal to 890 nanometers；Component (31) VCSEL side length is more than or equal to 500 nanometers, is less than or equal to 500 microns.

9. component (22) electrod-array according to claim 5, which is characterized in that component (22) electrod-array shares m row The quantity A (m >=A) of quantity m >=component (3) VCSEL array A row, component (22) electrod-array share quantity n >=portion of n column The quantity B (n >=B) of the B column of part (3) VCSEL array.That is, each component (31) VCSEL can be with one or more components Electrode connection in 22 electrod-arrays.

10. component (4) external control system according to claim 1, which is characterized in that component (4) external control system It is the control system that can convert graphics digital signal to required electric signal；Component (4) external control system passes through more roots Each electrode on part (41) wire connections part (22) electrod-array, and on energy independent control component (22) electrod-array The control system of each electrode power supply state.