CN109980075A - Light emitting device is miniaturized - Google Patents

Abstract

The invention discloses a kind of micromation light emitting devices comprising a substrate, the insulating layer being formed on substrate, the luminous micromodule in side and switch block.The luminous micromodule in side includes first electrode, second electrode and light-emitting surface.The luminous micromodule in side is arranged to the surface for making its light-emitting surface perpendicular or parallel to substrate.Switch block includes first end, the second end and control terminal for being coupled to first electrode.The present invention provide it is a kind of shone the micromation light emitting device of micromodule using side, high-luminous-efficiency can be not only provided and relatively narrow half-wave is wide, wide luminous visual angle can be also provided.

Description

miniaturized light-emitting device

technical field

The present invention relates to a miniaturized light-emitting device, in particular to a miniaturized light-emitting diode device using side-emitting micro-components.

Background technique

Compared with traditional incandescent bulbs, light emitting diodes (LEDs) have the advantages of low power consumption, long component life, small size, no warm-up time and fast response speed, and can be made into poles according to application requirements. Small or arrayed components. In addition to outdoor displays, traffic lights, and various consumer electronic products, such as LCD screen backlights for mobile phones, notebook computers or TVs, light-emitting diodes are also widely used in various indoor and outdoor lighting devices. To replace fluorescent tubes or incandescent bulbs, etc. According to the light emitting method, the light emitting diode can adopt a front-emission or a side-emission structure. Positive light-emitting components can provide a wide light-emitting viewing angle, but the light-emitting efficiency and half-wave width are difficult to control. The side light-emitting component has high luminous efficiency and narrow half-wave width, but the light-emitting angle of view is relatively narrow.

While traditional LED arrays are typically in the millimeter (mm) scale, the latest miniaturized light-emitting diode (microLED) arrays can be downsized to the micrometer (μm) scale and inherit the characteristics of LEDs, including low power consumption, high Brightness, ultra-high resolution and color saturation, fast response, long life, and high efficiency. The miniaturization LED manufacturing process includes first thinning, miniaturizing and arraying the LED structure design, so that the size is only about 1-250 μm, and then transferring the miniaturized LEDs to the circuit substrate in batches, and then using the physical deposition process to complete the protection. layer and upper electrode, and finally encapsulate the upper substrate.

The miniaturized light-emitting devices in the prior art all use positive light-emitting micro-components, and their optical efficiency is not high. Therefore, there is a need for a miniaturized light-emitting device that can simultaneously provide a wide light-emitting viewing angle and high light-emitting efficiency.

SUMMARY OF THE INVENTION

In view of the above-mentioned problems in the prior art, the purpose of the present invention is to provide a miniaturized light-emitting device using side-emitting micro-components, which can not only provide high light-emitting efficiency and narrow half-wave width, but also provide a wide light-emitting viewing angle Rate.

In order to achieve the above object, the present invention discloses a miniaturized light-emitting device, which includes a substrate; an insulating layer formed on the substrate; a side light-emitting micro-component including a first electrode, a second electrode and a a light-emitting surface, wherein the side-emitting micro-components are arranged so that the light-emitting surface is perpendicular to the surface of the substrate; and a switch component includes a first end and a second end coupled to the first electrode , and a control terminal.

In order to achieve the above object, the present invention discloses a miniaturized light-emitting device, which includes a substrate; an insulating layer formed on the substrate; a side light-emitting micro-component including a first electrode, a second electrode and a a light-emitting surface, wherein the side-emitting micro-component is arranged so that the light-emitting surface is parallel to the surface of the first substrate; a switch component includes a first end, a second end coupled to the first electrode end, and a control end; and at least one reflective structure, the surface of the reflective structure and the light-emitting surface form a specific angle, so as to adjust the traveling path of the light beam emitted by the side-emitting micro-component.

In order to achieve the above object, the present invention discloses a miniaturized light-emitting device, which includes a substrate; an insulating layer formed on the substrate; a side light-emitting micro-component including a first electrode, a second electrode and a a light-emitting surface, wherein the side-emitting micro-component is arranged so that the light-emitting surface is parallel to the surface of the substrate; a switch component includes a first end and a second end coupled to the first electrode, and a control terminal; a first dielectric layer having a first index of refraction; and a second dielectric layer having a second index of refraction, wherein the first index of refraction is different from the second index of refraction , and make the light beam emitted by the side-emitting micro-component satisfy a total reflection condition when it passes through the first dielectric layer and reaches the second dielectric layer.

Description of drawings

FIG. 1 is a schematic structural diagram of a side-emitting micro-component in an embodiment of the present invention.

FIG. 2 is a schematic structural diagram of a side-emitting micro-component in another embodiment of the present invention.

FIG. 3 is a schematic structural diagram of a side-emitting micro-component in another embodiment of the present invention.

FIG. 4 is a schematic structural diagram of a miniaturized light-emitting device according to an embodiment of the present invention.

FIG. 5 is a schematic structural diagram of a miniaturized light-emitting device according to another embodiment of the present invention.

FIG. 6 is a schematic structural diagram of a miniaturized light-emitting device according to another embodiment of the present invention.

FIG. 7 is a schematic structural diagram of a miniaturized light-emitting device according to another embodiment of the present invention.

FIG. 8 is a schematic structural diagram of a miniaturized light-emitting device according to another embodiment of the present invention.

FIG. 9 is a schematic structural diagram of a miniaturized light-emitting device according to another embodiment of the present invention.

Among them, the reference numerals are described as follows:

10, 11, 12 Main lighting components

12, 22 P-type semiconductor layer

14, 24 N-type semiconductor layer

16, 26 P electrode

15, 25 Light-emitting layer

18, 28 N electrode

20 Redundant Lighting Components

30 source line

40 ground wire

35 Conductive Materials

50 substrates

100, 200, 300 miniaturized light-emitting devices

Detailed ways

1 to 3 are schematic structural diagrams of the side-emitting micro-component 10 according to the embodiment of the present invention. The side-emitting micro-component 10 of the present invention can be a miniaturized LED component, which is a light-emitting component made by combining P-type semiconductor and N-type semiconductor elements, and can be batch-transferred and disposed on a substrate (not shown) after the fabrication is completed. superior.

In the embodiment shown in FIG. 1 , the side-emitting micro-component 10 includes a first metal layer 11 , a second metal layer 12 , a first semiconductor layer 13 , a second semiconductor layer 14 , and a light-emitting layer 15 . The first metal layer 11 can be used as a P electrode, the second metal layer 12 can be used as an N electrode, the first semiconductor layer 13 can be doped with P type, the second semiconductor layer 14 can be doped with N type, and the light emitting layer 15 An active layer or also called a carrier recombination region is fabricated into a multi-layer quantum well (MQW) structure, and the emission wavelength can be determined by the energy gap of the material. The light emitting layer 15 is formed between the first semiconductor layer 13 and the second semiconductor layer 14 , and the light emitting layer 15 , the first semiconductor layer 13 and the second semiconductor layer 14 are formed between the first metal layer 11 and the second metal layer 12 . When voltages of different polarities are applied to the first metal layer 11 and the second metal layer 12 respectively, the forward voltage will cause electrons to flow from the N region to the P region, and holes will flow from the P region to the N region. The PN junctions of the light emitting layer 15 are combined to generate a light source.

In the embodiment shown in FIG. 2 , the side-emitting micro-component 10 includes a first metal layer 11 , a second metal layer 12 , a first semiconductor layer 13 , a second semiconductor layer 14 , a light-emitting layer 15 , and A substrate 16 . The first metal layer 11 can be used as a P electrode, the second metal layer 12 can be used as an N electrode, the first semiconductor layer 13 can be doped with P type, the second semiconductor layer 14 can be doped with N type, and the light emitting layer 15 It is made into an active layer with an MQW structure or also called a carrier recombination region, and the emission wavelength can be determined by the energy gap of the material. The substrate 16 can be a sapphire (sapphire) substrate, a silicon (SiC) substrate, or a metal substrate, wherein the second semiconductor layer 14 is formed on the substrate 16, the light-emitting layer 15 and the second metal layer 12 are formed on the second semiconductor layer 14, The first semiconductor layer 13 is formed on the light emitting layer 15 , and the first metal layer 11 is formed on the first semiconductor layer 13 . When voltages of different polarities are applied to the first metal layer 11 and the second metal layer 12 respectively, the forward voltage will cause electrons to flow from the N region to the P region, and holes will flow from the P region to the N region. The PN junctions of the light emitting layer 15 are combined to generate a light source.

In the embodiment shown in FIG. 3 , the side-emitting micro-component 10 includes a first metal layer 11 , a second metal layer 12 , a first semiconductor layer 13 , a second semiconductor layer 14 , a light-emitting layer 15 , and A substrate 16 . The first metal layer 11 can be used as a P electrode, the second metal layer 12 can be used as an N electrode, the first semiconductor layer 13 can be doped with P type, the second semiconductor layer 14 can be doped with N type, and the light emitting layer 15 It is made into an active layer with an MQW structure or also called a carrier recombination region, and the emission wavelength can be determined by the energy gap of the material. The substrate 16 can be a sapphire substrate, a silicon substrate, or a metal substrate, wherein the second metal layer 12 is formed on the substrate 16, the second semiconductor layer 14 is formed on the substrate 16 and the second metal layer 12, and the light-emitting layer 15 is formed on the second semiconductor layer On the layer 14 , the first semiconductor layer 13 is formed on the light emitting layer 15 , and the first metal layer 11 is formed on the first semiconductor layer 13 . When voltages of different polarities are applied to the first metal layer 11 and the second metal layer 12 respectively, the forward voltage will cause electrons to flow from the N region to the P region, and holes will flow from the P region to the N region. The PN junctions of the light emitting layer 15 are combined to generate a light source.

FIG. 4 is a schematic structural diagram of a miniaturized light-emitting device 100 according to an embodiment of the present invention. FIG. 5 is a schematic structural diagram of a miniaturized light-emitting device 200 according to another embodiment of the present invention. The miniaturized light-emitting devices 100 and 200 adopt thin-film, miniaturized and arrayed designs, and include a plurality of side-emitting micro-components, a plurality of switch components, an insulating layer 30 , and a substrate 40 . In order to simplify the description, FIGS. 4 and 5 only show the single-side light-emitting micro-component 10 and the single switch component 20 as shown in FIG. 1 , however, the miniaturized light-emitting devices 100 and 200 can also be implemented as shown in FIGS. 2 and 3 . example. The side-emitting micro-component 10, the switching component 20 and the insulating layer 30 are all arranged or formed on the substrate 40, wherein the side-emitting micro-component 10 is arranged so that its main light-emitting surface (at least greater than 50% distribution ratio) is perpendicular to the insulating layer 30 and The surface (growth surface) of the substrate 40 is shown by the dotted arrow. The switch element 20 is a three-terminal element, wherein the first end 22 is coupled to a data line 32 , and the second end 24 is coupled to the P electrode (the first metal layer 11 ) of the side-emitting micro-element 10 through a drain line 34 , and the control terminal 26 is coupled to a scan line 36 .

In the embodiment shown in FIG. 4 , the miniaturized light-emitting device 100 adopts a lower switch structure, that is, the switch element 20 is formed on the substrate 40 , and the side-emitting micro-element 10 is formed on the higher insulating layer 30 . In the embodiment shown in FIG. 5 , the miniaturized light-emitting device 200 adopts an upper switch structure, that is, the side-emitting micro-components 10 are formed on the substrate 40 , and the switch components 20 are formed on the higher insulating layer 30 .

FIG. 6 is a schematic structural diagram of another miniaturized light-emitting device 300 according to an embodiment of the present invention. FIG. 7 is a schematic structural diagram of a miniaturized light-emitting device 400 according to another embodiment of the present invention. The miniaturized light-emitting devices 300 and 400 adopt thin-film, miniaturized and arrayed designs, and include a plurality of side-emitting micro-components, a plurality of switch components, an insulating layer 30 , a substrate 40 , and a surrounding structure 50 . In order to simplify the description, FIGS. 4 and 5 only show the single-side light-emitting micro-component 10 and the single switch component 20 as shown in FIG. 1 , however, the miniaturized light-emitting devices 300 and 400 can also be implemented as shown in FIGS. 2 and 3 . example. The surrounding structure 50 includes an insulating material over which a reflective layer 55 is covered. The side-emitting micro-component 10, the switch component 20, the insulating layer 30 and the surrounding structure 50 are all arranged or formed on the substrate 40, wherein the side-emitting micro-component 10 is arranged so that its main light-emitting surface (at least greater than 50% distribution ratio) is parallel to the The surfaces (growth surfaces) of the insulating layer 30 and the substrate 40 are indicated by the dotted arrows. The switch element 20 is a three-terminal element, wherein the first end 22 is coupled to a data line 32 , and the second end 24 is coupled to the P electrode (the first metal layer 11 ) of the side-emitting micro-element 10 through a drain line 34 , and the control terminal 26 is coupled to a scan line 36 .

In the embodiment shown in FIG. 6 , the miniaturized light-emitting device 300 adopts a lower switch structure, that is, the switch element 20 is formed on the substrate 40 , and the side-emitting micro-element 10 and the surrounding structures 50 are formed on the higher insulating layer 30 . superior. The surrounding structure 50 includes a plurality of surfaces, each surface and the surface of the insulating layer 30 form a specific angle, so the traveling path of the light beam emitted by the side-emitting micro-component 10 on the main light-emitting surface can be adjusted, as shown by the dotted arrow.

In the embodiment shown in FIG. 7 , the miniaturized light-emitting device 400 adopts an upper switch structure, that is, the side-emitting micro-component 10 and the surrounding structure 50 are formed on the substrate 40 , and the switch component 20 is formed on the higher insulating layer 30 . superior. The surrounding structure 50 includes a plurality of surfaces, each of which forms a specific angle with the surface of the substrate 40 , so the traveling path of the light beam emitted by the side-emitting micro-component 10 on the main light-emitting surface can be adjusted, as shown by the dotted arrow.

FIG. 8 is a schematic structural diagram of a miniaturized light-emitting device 500 according to an embodiment of the present invention. FIG. 9 is a schematic structural diagram of a miniaturized light-emitting device 600 according to another embodiment of the present invention. The miniaturized light-emitting devices 500 and 600 adopt thin-film, miniaturized and arrayed designs, and include a plurality of side-emitting micro-components, a plurality of switch components, an insulating layer 30, a substrate 40, a first dielectric layer 61, and a second dielectric layer 62 . In order to simplify the description, FIGS. 8 and 9 only show the single-side light-emitting micro-component 10 and the single switch component 20 as shown in FIG. 1 , but the miniaturized light-emitting devices 500 and 600 can also be implemented as shown in FIGS. 2 and 3 . example. The side-emitting micro-component 10 , the switch component 20 , the insulating layer 30 , the first dielectric layer 61 , and the second dielectric layer 62 are all disposed or formed on the substrate 40 , wherein the side-emitting micro-component 10 is arranged such that its main light-emitting surface is (a distribution ratio greater than 50% at least) is parallel to the surfaces (growth planes) of the insulating layer 30 and the substrate 40, as indicated by the dashed arrows. The switch element 20 is a three-terminal element, wherein the first end 22 is coupled to a data line 32 , and the second end 24 is coupled to the P electrode (the first metal layer 11 ) of the side-emitting micro-element 10 through a drain line 34 , and the control terminal 26 is coupled to a scan line 36 .

In the embodiment shown in FIG. 8 , the miniaturized light-emitting device 500 adopts a lower switch structure, that is, the switch element 20 is formed on the substrate 40 , and the side-emitting micro-element 10 , the first dielectric layer 61 and the second dielectric Layer 62 is formed on upper insulating layer 30 . The first dielectric layer 61 and the second dielectric layer 62 have different dielectric constants, and the surface of the second dielectric layer 62 and the surface of the insulating layer 30 form a specific angle θ. Therefore, the first dielectric layer 61 and the second dielectric layer 62 provide different refractive indices on the traveling path of the light beam emitted from the side-emitting micro-component 10 on the main light-emitting surface, thereby adjusting the traveling direction of the light beam, as shown by the dotted arrow.

In the embodiment shown in FIG. 9 , the miniaturized light-emitting device 600 adopts an upper switch structure, that is, the side-emitting micro-component 10 , the first dielectric layer 61 and the second dielectric layer 62 are formed on the substrate 40 , and the switch Assembly 20 is formed on upper insulating layer 30 . The first dielectric layer 61 and the second dielectric layer 62 have different dielectric constants, and the surface of the second dielectric layer 62 and the surface of the insulating layer 30 form a specific angle θ. Therefore, the first dielectric layer 61 and the second dielectric layer 62 provide different refractive indices on the traveling path of the light beam emitted from the side-emitting micro-component 10 on the main light-emitting surface, thereby adjusting the traveling direction of the light beam, as shown by the dotted arrow.

In the embodiments shown in FIGS. 8 and 9 , the dielectric constant n1 of the first dielectric layer 61 and the dielectric constant n2 of the second dielectric layer 62 can be designed according to Snell's law to satisfy Total reflection condition. In more detail, it is assumed that the incident angle of light entering the second dielectric layer 62 from the first dielectric layer 61 is θ1, and the refraction angle affected by the second dielectric layer 62 is θ2, where n1*sin(θ1)=n2 *sin(θ2), and the critical angle is θc=sin ^-1 (n2/n1). When the incident angle of light is greater than the critical angle, no transmission will occur, a phenomenon called total reflection. Therefore, the present invention can determine the permittivity n1 of the first dielectric layer 61 and the permittivity of the second dielectric layer 62 , and then adjust the specific Angle θ, so that the incident angle of the light emitted by the side-emitting micro-component 10 when entering the second dielectric layer 62 from the first dielectric layer 61 will be greater than the critical angle θc, and then adjust the traveling direction of the light beam, as shown by the dotted arrow .

In summary, the present invention provides a miniaturized light-emitting device using side-emitting micro-components, which can not only provide high light-emitting efficiency and a narrow half-wave width, but also provide a wide light-emitting viewing angle.

The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims (9)

1. A miniaturized light-emitting device, characterized in that, comprising: a first substrate; an insulating layer formed on the first substrate; a side-emitting micro-component comprising a first electrode, a second electrode and a light-emitting surface, wherein the side-emitting micro-component is arranged so that the light-emitting surface is perpendicular to the surface of the first substrate; and A switch assembly comprising: a first end; a second end coupled to the first electrode; and a control terminal. 2. A miniaturized light-emitting device, characterized in that, comprising: a first substrate; an insulating layer formed on the first substrate; a side-emitting micro-component, comprising a first electrode, a second electrode and a light-emitting surface, wherein the side-emitting micro-component is arranged so that the light-emitting surface is parallel to the surface of the first substrate; A switch assembly comprising: a first end; a second end coupled to the first electrode; and a control terminal; and At least one surrounding structure is covered with a reflective layer and includes a plurality of surfaces, and each surface and the light-emitting surface respectively form a specific angle, so as to adjust the traveling path of the light beam emitted by the side-emitting micro-component. 3. A miniaturized light-emitting device, characterized in that, comprising: a first substrate; an insulating layer formed on the first substrate; a side-emitting micro-component, comprising a first electrode, a second electrode and a light-emitting surface, wherein the side-emitting micro-component is arranged so that the light-emitting surface is parallel to the surface of the first substrate; A switch assembly comprising: a first end; a second end coupled to the first electrode; and a control terminal; a first dielectric layer having a first index of refraction; and a second dielectric layer having a second index of refraction, wherein the first index of refraction is different from the second index of refraction, and enables the light beam emitted by the side-emitting micro-component to pass through the first dielectric layer A total reflection condition is satisfied when reaching the second dielectric layer. 4. The miniaturized light-emitting device according to any one of claims 1 to 3, wherein The side-emitting micro-component is formed on the insulating layer, and the switch component is formed on the first substrate. 5. The miniaturized light-emitting device according to any one of claims 1 to 3, wherein The side-emitting micro-component is formed on the first substrate, and the switch component is formed on the insulating layer. 6. The miniaturized light-emitting device of any one of claims 1 to 3, wherein: The side-emitting micro-component includes: a first metal layer used as the first electrode; a second metal layer used as the second electrode; a first semiconductor layer; a second semiconductor layer; and a light-emitting layer; the first semiconductor layer and the second semiconductor layer are in different doping types; the light emitting layer is formed between the first semiconductor layer and the second semiconductor layer; and The light emitting layer, the first semiconductor layer and the second semiconductor layer are formed between the first metal layer and the second metal layer. 7. The miniaturized light-emitting device according to any one of claims 1 to 3, wherein: The side-emitting micro-component includes: a first metal layer used as the first electrode; a second metal layer used as the second electrode; a first semiconductor layer; a second semiconductor layer; a light-emitting layer; and a second substrate the first semiconductor layer and the second semiconductor layer are in different doping types; the second semiconductor layer is formed on the second substrate; the light-emitting layer and the second metal layer are formed on the second semiconductor layer; the first semiconductor layer is formed on the light emitting layer; and The first metal layer is formed on the first semiconductor layer. 8. The miniaturized light-emitting device according to any one of claims 1 to 3, wherein: The side-emitting micro-component includes: a first metal layer used as the first electrode; a second metal layer used as the second electrode; a first semiconductor layer; a second semiconductor layer; a light-emitting layer; and a second substrate the first semiconductor layer and the second semiconductor layer are in different doping types; the second metal layer is formed on the second substrate; the second semiconductor layer is formed on the substrate and the second metal layer; the light-emitting layer is formed on the second semiconductor layer; the first semiconductor layer is formed on the light emitting layer; and The first metal layer is formed on the first semiconductor layer. 9 . The miniaturized light-emitting device according to claim 1 , wherein: 10 . The side-emitting micro-components are miniaturized light-emitting diodes.