CN109962150A - A kind of encapsulation film and preparation method thereof, and optoelectronic device - Google Patents

Abstract

The invention discloses an encapsulation film, a preparation method thereof, and an optoelectronic device, wherein the encapsulation film comprises a first organic thin film arranged in layers, a first blended film composed of a polymer and a ceramic material, and a first organic film composed of a ceramic material. ‑4 layers of ceramic membrane, second blend membrane composed of polymer and ceramic material, second organic thin film. In the present invention, the first organic film and the second organic film are used as the water vapor barrier layer, and 1-4 layers of dense ceramic films are used as the oxygen barrier layer. The blended layer can effectively improve the bonding force between the organic film and the ceramic film, thereby enhancing the water and oxygen barrier properties of the encapsulated film, thereby meeting the requirements for water vapor permeability of optoelectronic devices and improving the use of optoelectronic devices. life.

Description

A kind of encapsulation film and preparation method thereof, and optoelectronic device

technical field

The invention relates to the field of optoelectronic devices, in particular to a packaging film, a preparation method thereof, and an optoelectronic device.

Background technique

The lifespan of optoelectronic devices is a very important parameter. In order to improve the lifespan of optoelectronic devices and make them reach the commercial level, packaging is a crucial link. For optoelectronic devices, encapsulation is not only to prevent physical protection such as scratches, but also to prevent the penetration of water vapor and oxygen in the external environment. The water vapor or oxygen in these environments penetrates into the device, which will accelerate the aging of the device. Therefore, the packaging structure of optoelectronic devices must have good water and oxygen permeation barrier functions.

At present, the packaging technology of commercial optoelectronic devices is developing from traditional cover-plate packaging to new thin-film integrated packaging. Compared with traditional cover plate packaging, thin film packaging can significantly reduce the thickness and quality of the device, saving about 50% of potential packaging costs, and thin film packaging can be applied to flexible devices. Thin film packaging technology will be an inevitable trend of development.

In the prior art, organic thin films with transparent and hydrophobic properties are usually used as the encapsulation films of optoelectronic devices. However, the existing organic thin films usually have better water vapor barrier properties, but their poor gas barrier properties limit their use as encapsulation film materials. Wide range of applications in optoelectronic devices.

In order to improve the gas barrier properties of organic packaging film materials, the most common method is to introduce a layer of inorganic ceramic film in the middle of the organic film to form a multi-layer film packaging structure. However, the incompatibility between the pure inorganic ceramic film and the organic film leads to poor performance of the composite material, which affects the water and oxygen barrier properties of the encapsulation film material.

Therefore, the existing technology still needs to be improved and developed.

SUMMARY OF THE INVENTION

In view of the above-mentioned deficiencies of the prior art, the purpose of the present invention is to provide an encapsulation film, a preparation method thereof, and an optoelectronic device, aiming at solving the problem of poor water and oxygen barrier properties of the existing encapsulation film.

The technical scheme of the present invention is as follows:

An encapsulation film, comprising a first organic film stacked in sequence, a first blended film composed of a polymer and a ceramic material, 1-4 layers of ceramic films composed of a ceramic material, and a polymer and a ceramic material The second blended film, the second organic thin film.

In the packaging film, the ceramic material is one or more of silicon oxide, aluminum oxide, zinc oxide, titanium oxide and tungsten oxide.

The packaging film, wherein the first organic film material, the second organic film material, the polymer in the first blend film and the polymer in the second blend film are independently selected from polylactic acid, polytetrafluoroethylene One or more of ethylene, polymethylsiloxane and polypropylene.

In the packaging film, the thickness of the first organic film is 1-3 μm; and/or the thickness of the second organic film is both 1-3 μm.

In the packaging film, the thickness of the first blended film is 0.8-1.2 μm; and/or the thickness of the second blended film is both 0.8-1.2 μm.

In the packaging film, the thickness of the ceramic film is 0.1-1 μm.

A method for preparing an encapsulation film, comprising the steps of:

providing a device to be packaged, and depositing a first organic thin film on the surface of the device;

depositing a first blend film on the first organic thin film, the first blend film consisting of a polymer and a ceramic material;

On the first blended film, deposit N layers of ceramic films stacked in layers, 1≤N≤4;

depositing a second blend film on the Nth layer of ceramic film, the second blend film consisting of a polymer and a ceramic material;

A second organic thin film is deposited on the second blended film.

The preparation method of the encapsulation film, wherein, the preparation of the deposition of the first mixed film on the first organic film comprises the following steps:

Under alkaline conditions, the inorganic precursor and the organic monomer are reacted for the first time in an inert atmosphere according to a predetermined weight ratio;

adding a catalyst, and carrying out the second reaction under vacuum conditions to obtain a blended material;

Dispersing the blended material into a tetrahydrofuran solvent after drying to obtain a blended solution consisting of a polymer and a ceramic material;

A blended liquid composed of a polymer and a ceramic material is deposited on the first organic thin film to obtain a first blended film.

In the preparation method of the encapsulation film, the inorganic precursor is ethyl orthosilicate, aluminum nitrate, zinc acetate, sodium tungstate or tetrabutyl titanate.

In the preparation method of the encapsulation film, the organic monomer is one or more of lactic acid, tetrafluoroethylene, methylsiloxane and propylene.

In the preparation method of the encapsulation film, the catalyst is one or more of stannous octoate, stannous acetate and hydrochloric acid.

In the preparation method of the encapsulation film, the temperature of the first reaction is 50-100°C and/or the heating rate is 0.5-1°C/min.

In the preparation method of the encapsulation film, the temperature of the second reaction is 150-200°C.

An optoelectronic device, comprising a first electrode, a light-emitting layer and a second electrode, wherein an encapsulation film is provided on the second electrode, and the encapsulation film is the encapsulation film described in any of the above, or the encapsulation film An encapsulation film prepared by any of the methods described above.

Beneficial effects: The encapsulation film provided by the present invention includes a first organic film arranged in layers, a first blend film composed of a polymer and a ceramic material, 1-4 layers of ceramic films composed of a ceramic material, a polymer and a ceramic material The second blend film and the second organic thin film are composed. In the present invention, the first organic film and the second organic film are used as the water vapor barrier layer, and 1-4 layers of dense ceramic films are used as the oxygen barrier layer. The blended layer can effectively improve the bonding force between the organic film and the ceramic film, thereby enhancing the water and oxygen barrier properties of the encapsulated film, thereby meeting the requirements for water vapor permeability of optoelectronic devices and improving the use of optoelectronic devices. life.

Description of drawings

1 is a schematic structural diagram of a preferred embodiment of a packaging film of the present invention;

FIG. 2 is a flow chart of a preferred embodiment of a method for preparing an encapsulation film of the present invention.

Detailed ways

The present invention provides an encapsulation film, a preparation method thereof, and an optoelectronic device. In order to make the purpose, technical solution and effect of the present invention clearer and clearer, the present invention is further described below in detail. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention.

Please refer to FIG. 1. FIG. 1 is a schematic structural diagram of a preferred embodiment of an encapsulation film provided by the present invention. As shown in the figure, the encapsulation film includes a laminated first organic film 10, which is composed of a polymer and a ceramic material. The first blend membrane 20, the 1-4 layers of ceramic membranes 30 composed of ceramic materials, the second blend membrane 40 composed of polymers and ceramic materials, and the second organic thin film 50.

Specifically, in this embodiment, the first organic thin film and the second organic thin film are used as the water vapor barrier layer, the dense ceramic film is used as the oxygen barrier layer, and by adding a polymer and a ceramic material between the ceramic film and the organic thin film The blended film can not only enhance the compatibility between the ceramic film and the organic film, but also reduce the defects between the film layers, thereby enhancing the water and oxygen barrier properties and optical properties of the encapsulation film.

Preferably, the first organic thin film material, the second organic thin film material, the polymer in the first blend film and the polymer in the second blend film are all transparent hydrophobic materials, specifically polylactic acid, polytetrafluoroethylene One or more of vinyl fluoride, polymethylsiloxane and polypropylene. As an example, in this embodiment, polylactic acid (PLA) is preferred to prepare organic films and blend films, because it not only has strong water vapor barrier properties, but also PLA is a renewable and degradable new environmentally friendly material. Many properties of PLA It can be controlled by preparation process and modification means.

Preferably, in this embodiment, in order to ensure that the encapsulation film has better water vapor barrier properties, the first organic film is set to 1-3 μm.

More preferably, the thickness of the second organic thin film is also set to 1-3 μm.

In order to make up for the defect of poor gas barrier performance of the organic thin film, in this embodiment, 1-4 layers of dense ceramic membranes made of ceramic materials are arranged between the first organic thin film and the second organic thin film.

In one embodiment, the ceramic material is one or more of silicon oxide, aluminum oxide, zinc oxide, titanium oxide and tungsten oxide, but not limited thereto. Silicon oxide is preferred as the ceramic film material, because the silicon oxide film not only has high transparency and high density, but also has strong bonding force with the organic film and has the best oxygen barrier performance.

More preferably, in this embodiment, in order to ensure that the packaging film has better oxygen barrier properties, the ceramic film is provided with 2-3 layers, and the thickness of the ceramic film is set to be 0.1-1 μm.

Further, in this embodiment, a layer of blended membrane composed of polymer and ceramic material is arranged between the ceramic membrane and the organic thin film, and the blended membrane can not only enhance the compatibility between the ceramic membrane and the organic thin film. It can also reduce the defects between the film layers, thereby enhancing the water and oxygen barrier properties and optical properties of the encapsulated film.

Preferably, in this embodiment, in order to enhance the bonding force between the ceramic film and the organic thin film, the thickness of the first blended film is set to 0.8-1.2 μm.

More preferably, the thickness of the second blended film is also set to 0.8-1.2 μm.

The multi-layer encapsulation film provided in this embodiment can form a good covering step, and can effectively isolate the permeation of water vapor and oxygen by using the joint action of the multi-layer film, and can meet the requirements for water vapor permeability of optoelectronic devices, thereby improving optoelectronic devices. At the same time, the encapsulation film is a transparent film, which can be used for the encapsulation structure of top light-emitting devices and screens.

Further, the present invention also provides a method for preparing an encapsulation film, wherein, as shown in FIG. 2 , the method includes the steps:

S1, providing a device to be packaged, and depositing a first organic thin film on the surface of the device;

S2, depositing a first blended film on the first organic thin film, where the first blended film is composed of a polymer and a ceramic material;

S3, depositing an N-layer ceramic film laminated on the first blend film, 1≤N≤4;

S4, depositing a second blended film on the N-th ceramic film, where the second blended film is composed of a polymer and a ceramic material;

S5, depositing a second organic thin film on the second blended film.

Further, the preparation of depositing the first mixed film on the first organic thin film includes the following steps:

Under alkaline conditions, the inorganic precursor and the organic monomer are reacted for the first time in an inert atmosphere according to a predetermined weight ratio;

adding a catalyst, and carrying out the second reaction under vacuum conditions to obtain a blended material;

Dispersing the blended material into a tetrahydrofuran solvent after drying to obtain a blended solution consisting of a polymer and a ceramic material;

A blended liquid composed of a polymer and a ceramic material is deposited on the first organic thin film to obtain a first blended film.

Preferably, the inorganic precursor is ethyl orthosilicate, aluminum nitrate, zinc acetate, sodium tungstate or tetrabutyl titanate, but not limited thereto.

Preferably, the organic monomer is one or more of lactic acid, tetrafluoroethylene, methylsiloxane and propylene, but not limited thereto.

More preferably, the first reaction of the inorganic precursor and the organic monomer is carried out in an inert atmosphere according to a weight ratio of 1:1.

Preferably, the catalyst is one or more of stannous octoate, stannous acetate and hydrochloric acid, but is not limited thereto.

Preferably, the temperature of the first reaction is 50-100°C and/or the heating rate is 0.5-1°C/min.

Preferably, the temperature of the second reaction is 150-200°C.

Preferably, the inert atmosphere is one or more of nitrogen, helium, neon and argon, but not limited thereto.

In a specific embodiment for preparing the polylactic acid-silica blend solution, 30% strong ammonium oxide is added to ethanol as a catalyst, and then stirred at 50-80 °C, and 10-20 ml is added while stirring. Ethyl orthosilicate (TEOS), continue stirring for 15-25 h to obtain a silica ethanol solution;

Under alkaline conditions, a 10% concentration of silica ethanol solution and lactic acid were reacted in a nitrogen atmosphere in a ratio of 1:1 by weight, the reaction temperature was 80 °C, and the heating rate was 0.8 °C/min. The time is 1.5h, and then 0.05g of stannous octoate is added as a catalyst to continue the reaction in vacuum for 5h, and the reaction temperature is 180 ° C; wherein, the reaction equation is as follows:

SiO ₂ -OH+OH-CO(CH ₃ )CH-OH=SiO ₂ -O-CO(CH ₃ )CH-OH

SiO ₂ -O-CO(CH ₃ )CH-OH+OH-CO(CH3)CH-OH=SiO ₂ -O-(CO(CH ₃ )CH-O) _n H

The product obtained by the reaction is dried and then dispersed in a tetrahydrofuran solvent to prepare a polylactic acid-silica blend solution.

In a specific embodiment for preparing a polymethylsiloxane-silica blend solution, 30% strong ammonium oxide is first added to ethanol as a catalyst, and then stirred at 50-80 °C, while stirring Add 10-20ml of tetraethyl orthosilicate (TEOS) and continue stirring for 15-25 h to obtain a silica ethanol solution;

The 15% silica ethanol solution and methyltrimethoxysilane with a weight ratio of 1:1 were reacted under a nitrogen atmosphere, stirred at 50-60 °C for 10-20 min, and the pH was adjusted by hydrochloric acid The value is between 2 and 3, and under the catalysis of hydrochloric acid, the precursor compound is hydrolyzed to form a semi-interpenetrating network, and the hydrolysis and monomer polymerization are simultaneously prepared to obtain a silica-polymethylsiloxane blend material;

The silica-polymethylsiloxane blend material is dried and then dispersed in a tetrahydrofuran solvent to prepare a polymethylsiloxane-silica blend liquid.

In a specific embodiment for preparing a polytetrafluoroethylene-titanium dioxide blend solution, under alkaline conditions, the tetrabutyl titanate alcohol solution and tetrafluoroethylene are reacted in a certain proportion in an inert atmosphere for 0.5-1 h, 0.01-1 g of hydrochloric acid is added, the pH value is adjusted between 2-3 by hydrochloric acid, and a polytetrafluoroethylene-titanium dioxide blend solution is formed under the catalysis of hydrochloric acid.

The polymer-ceramic material blend liquid prepared by the above method makes the blend film have good bonding force, and the inorganic ceramic material is hybridized in the polymer network, so that the stability of the blend film is improved to a certain extent.

Preferably, in this embodiment, both the organic thin film and the blended film can be prepared by casting, spin coating or printing.

The ceramic film is preferably prepared by the PECVD method: taking the SiO ₂ film prepared by the PECVD (plasma-enhanced chemical vapor deposition) method as an example, the device to be packaged is placed on the substrate of the PECVD device, and silane (SiH ₄ ) and sodium hydroxide are introduced. The gas (N ₂ O) reacts in the plasma state, the process temperature is lower than 150 ℃, and the reaction equation is:

SiH ₄ +2N ₂ O=SiO ₂ +2N ₂ +H ₂

The specific process parameters of the coating are as follows: SiH ₄ is 10-45 sccm, N ₂ O is 100-364 sccm, and N ₂ is 300-800 sccm; nitrogen is used as a diluent gas, and its main function is to affect the partial pressure of the reaction gas in the reaction chamber; PECVD equipment is preferred The power is between 30W-200W. The smaller the power, the smaller the deposition rate and the better the film uniformity. However, both the deposition rate and the film uniformity need to be considered, so the power selection is between 30W-200W. The film deposition rate was kept between 20 nm and 50 nm.

Further, the present invention also provides an optoelectronic device, comprising a first electrode, a light-emitting layer and a second electrode, wherein an encapsulation film is provided on the second electrode, and the encapsulation film is the package described in any of the above The film, or the encapsulation film is the encapsulation film prepared by any of the above-mentioned methods. The encapsulation film can effectively isolate the penetration of water vapor and oxygen on the basis of ensuring the luminous efficiency and luminous brightness of the device, thereby improving the life of the device.

A kind of optoelectronic device and its packaging method of the present invention will be described in detail below through specific embodiments:

Example 1

1. The structure of the optoelectronic device is: ITO substrate/PEDOT: PSS (50 nm)/poly-TPD (30 nm)/quantum dot light-emitting layer (20 nm)/ZnO (30nm)/silver (70 nm)/encapsulation film (4100 nm), wherein the material of the encapsulation film is PLA/SiO ₂ -PLA blend film/SiO ₂ /SiO ₂ -PLA blend film/PLA composite film, the thickness of the SiO ₂ film is 100 nm, two The thickness of the layer PLA film is both 1000 nm, and the thickness of the two SiO ₂ -PLA blend films is both 1000 nm.

2. The packaging method of the optoelectronic device includes the steps:

1) A 10 mg/ml PLA chloroform solution was cast on the top surface of the silver electrode of the optoelectronic device to form a film, and then vacuum-dried at 0.8 Pa at 120 °C for 30 min to prepare a PLA film;

2) Under alkaline conditions, the 5 wt% SiO ₂ alcohol solution and lactic acid were reacted in a nitrogen atmosphere at a ratio of 1:1. The reaction temperature was 100 °C and the reaction time was 1 h. After the reaction was completed In the above reaction system, 0.01 g of stannous octoate was added as a catalyst to continue the reaction in vacuum for 5 h at a reaction temperature of 150 °C. The reaction product was dissolved in a tetrahydrofuran solution with a concentration of 10 mg/ml, cast on the surface of the PLA film to form a film, and then vacuum-dried at 0.8 Pa at 120 °C for 30 min to prepare a SiO ₂ -PLA blend film;

3), then adopt the method of PECVD, use silane (SiH ₄ ) as 16 sccm and nitrous oxide (N ₂ O) as 120 sccm, react in plasma state, the process temperature is 150 ℃, the power is 40 W, and the nitrogen flow rate is Silica films were prepared under the conditions of 300 sccm and a coating rate of 25 nm/min;

4), using the method of step 2) to prepare another layer of SiO ₂ -PLA blend film on the surface of the silicon dioxide film;

5) Using the method of step 1) to prepare a PLA film on the surface of the SiO ₂ -PLA blend film described in step 4), and then vacuum drying at 0.8 Pa at 120° C. for 30 min to realize the encapsulation of optoelectronic devices.

Example 2

1. The structure of the optoelectronic device is: ITO substrate/PEDOT: PSS (50 nm)/poly-TPD (30 nm)/quantum dot light-emitting layer (20 nm)/ZnO (30nm)/silver (70 nm)/encapsulation film (9000 nm), wherein, the material of the encapsulation film is PLA/SiO ₂ -PLA blend film/SiO ₂ /SiO ₂ -PLA blend film/PLA composite film, the thickness of the SiO ₂ film is 1000 nm, two The thickness of the layer PLA film is both 3000 nm, and the thickness of the two SiO ₂ -PLA blend films is both 1000 nm.

2. The packaging method of the optoelectronic device includes the steps:

1) A 10 mg/ml PLA chloroform solution was cast on the top surface of the silver electrode of the optoelectronic device to form a film, and then vacuum-dried at 0.8 Pa at 120 °C for 30 min to prepare a PLA film;

2) Under alkaline conditions, the SiO ₂ alcohol solution with a mass fraction of 20 wt% and lactic acid were reacted in a nitrogen atmosphere at a ratio of 1:1. The reaction temperature was 100 °C and the reaction time was 1 h. After the reaction was completed In the above reaction system, 0.01 g of stannous octoate was added as a catalyst to continue the reaction in vacuum for 5 h at a reaction temperature of 150 °C. The reaction product was dissolved in a tetrahydrofuran solution with a concentration of 10 mg/ml, cast on the surface of the PLA film to form a film, and then vacuum-dried at 0.8 Pa at 120 °C for 30 min to prepare a SiO ₂ -PLA blend film;

3), then adopt the method of PECVD, use silane (SiH ₄ ) as 40 sccm and nitrous oxide (N ₂ O) as 300 sccm, react in plasma state, process temperature is 150 ℃, power is 190 W, nitrogen flow rate is 600 sccm, silicon dioxide films were prepared at a coating rate of 40 nm/min;

4), using the method of step 2) to prepare another layer of SiO ₂ -PLA blend film on the surface of the silicon dioxide film;

5) Using the method of step 1) to prepare a PLA film on the surface of the SiO ₂ -PLA blend film described in step 4), and then vacuum drying at 0.8 Pa at 120° C. for 30 min to realize the encapsulation of optoelectronic devices.

Example 3

1. The structure of the optoelectronic device is: ITO substrate/PEDOT: PSS (50 nm)/poly-TPD (30 nm)/quantum dot light-emitting layer (20 nm)/ZnO (30nm)/silver (70 nm)/encapsulation film (4100 nm), wherein the material of the encapsulation film is PLA/ZnO-PLA blend film/ZnO/ZnO-PLA blend film/PLA composite film, the thickness of the ZnO film is 100 nm, and the thickness of the two-layer PLA film is The thicknesses are both 1000 nm, and the thicknesses of the two ZnO-PLA blend films are both 1000 nm.

2. The packaging method of the optoelectronic device includes the steps:

1) A 10 mg/ml PLA chloroform solution was cast on the top surface of the silver electrode of the optoelectronic device to form a film, and then vacuum-dried at 0.8 Pa at 120 °C for 30 min to prepare a PLA film;

2) Under alkaline conditions, the ZnO alcohol solution with a mass fraction of 10 wt% and lactic acid were reacted in a nitrogen atmosphere at a ratio of 1:1, the reaction temperature was 100 °C, and the reaction time was 1 h. In the above reaction system, 0.01 g of stannous octoate was added as a catalyst to continue the reaction in vacuum for 5 h at a reaction temperature of 150 °C. The reaction product was dissolved in a tetrahydrofuran solution with a concentration of 10 mg/ml, cast on the surface of the PLA film to form a film, and then vacuum-dried at 120 °C at 0.8 Pa for 30 min to prepare a ZnO-PLA blend film;

3), then adopt the method of PECVD, use zinc acetate (DEZn) as 50 sccm and nitrous oxide (N ₂ O) as 100 sccm, react in the plasma state, the process temperature is 100 ℃, the power is 150W, and the nitrogen flow rate is 600 sccm, ZnO films were prepared at a coating rate of 40 nm/min;

4), using the method of step 2) to prepare another layer of ZnO-PLA blend film on the surface of the zinc oxide film;

5) Using the method of step 1) to prepare a PLA film on the surface of the ZnO-PLA blend film described in step 4), and then vacuum drying at 0.8 Pa at 120°C for 30 min to realize the encapsulation of optoelectronic devices.

Example 4

1. The structure of the optoelectronic device is: ITO substrate/PEDOT: PSS (50 nm)/poly-TPD (30 nm)/quantum dot light-emitting layer (20 nm)/ZnO (30nm)/silver (70 nm)/encapsulation film (4100 nm), wherein the material of the encapsulation film is PTFE/TiO2-PTFE blended film/TiO2/TiO2-PTFE blended film/PTFE film, the thickness of the TiO2 film is 100 nm, two layers of polytetrafluoroethylene The thickness of the (PTFE) film is both 1000 nm, and the thickness of the two TiO2-PTFE blend films is both 1000 nm.

2. The packaging method of the optoelectronic device includes the steps:

1) A 10 mg/ml PTFE chloroform solution was cast on the top surface of the silver electrode of the optoelectronic device to form a film, and then vacuum-dried at 0.8 Pa for 30 min at 120 °C to prepare a PTFE film;

2) Under alkaline conditions, the TiO2 alcohol solution with a mass fraction of 10 wt% and tetrafluoroethylene were reacted in a nitrogen atmosphere at a ratio of 1:1, the reaction temperature was 100 °C, and the reaction time was 1 h, the reaction was completed. Then, 0.01 g of hydrochloric acid was added to the above reaction system as a catalyst to continue the reaction in vacuum for 5 h at a reaction temperature of 150 °C. The reaction product was dissolved in a tetrahydrofuran solution with a concentration of 10 mg/ml, cast on the surface of the PTFE film to form a film, and then vacuum-dried at 0.8 Pa at 120 °C for 30 min to prepare a TiO2-PTFE blended film;

3), then adopt the method of PECVD, using titanium acetate (DETi) as 50 sccm and nitrous oxide (N ₂ O) as 100 sccm, react in plasma state, the process temperature is 100 ℃, the power is 150W, and the nitrogen flow rate is 600 sccm, TiO2 thin films were prepared at a coating rate of 40 nm/min;

4), using the method of step 2) to prepare another layer of TiO2-PTFE blend film on the surface of the titanium dioxide film;

5) Using the method of step 1) to prepare a PTFE film on the surface of the TiO2-PTFE blend film described in step 4), and then vacuum drying at 0.8 Pa at 120 °C for 30 min to realize the encapsulation of optoelectronic devices.

To sum up, the encapsulation film provided by the present invention includes a layered first organic film, a first blended film composed of a polymer and a ceramic material, a ceramic film composed of a ceramic material, and a first organic film composed of a polymer and a ceramic material. The second blend film, the second organic thin film. In the present invention, the first organic film and the second organic film are used as the water vapor barrier layer, and 1-4 layers of dense ceramic films are used as the oxygen barrier layer. The blended layer can effectively improve the bonding force between the organic film and the ceramic film, thereby enhancing the water and oxygen barrier properties of the encapsulated film, thereby meeting the requirements for water vapor permeability of optoelectronic devices and improving the use of optoelectronic devices. life.

It should be understood that the application of the present invention is not limited to the above examples. For those of ordinary skill in the art, improvements or transformations can be made according to the above descriptions, and all these improvements and transformations should belong to the protection scope of the appended claims of the present invention.

Claims (14)

1. an encapsulation film, it is characterized in that, comprise the first organic film that is arranged by lamination, the first blended film that is made up of polymer and ceramic material, 1-4 layers of ceramic film that is made up of ceramic material, is made up of polymer and ceramic film. The second blended film and the second organic thin film composed of ceramic materials. 2 . The packaging film according to claim 1 , wherein the ceramic material is one or more of silicon oxide, aluminum oxide, zinc oxide, titanium oxide and tungsten oxide. 3 . 3. The packaging film according to claim 1, wherein the first organic film material, the second organic film material, the polymer in the first blend film, and the polymer in the second blend film are independent One or more selected from polylactic acid, polytetrafluoroethylene, polymethylsiloxane and polypropylene. 4 . The packaging film according to claim 1 , wherein the thickness of the first organic film is 1-3 μm; and/or the thickness of the second organic film is 1-3 μm. 5 . 5 . The packaging film according to claim 1 , wherein the thickness of the first blended film is 0.8-1.2 μm; and/or the thickness of the second blended film is 0.8-1.2 μm. 6 . 6 . The packaging film according to claim 1 , wherein the thickness of the ceramic film is 0.1-1 μm. 7 . 7. a preparation method of encapsulation film, is characterized in that, comprises the steps: providing a device to be packaged, and depositing a first organic thin film on the surface of the device; depositing a first blend film on the first organic thin film, the first blend film consisting of a polymer and a ceramic material; On the first blended film, deposit N layers of ceramic films stacked in layers, 1≤N≤4; depositing a second blend film on the Nth layer of ceramic film, the second blend film consisting of a polymer and a ceramic material; A second organic thin film is deposited on the second blended film. 8. The preparation method of the encapsulation film according to claim 7, wherein the preparation of depositing the first mixed film on the first organic film comprises the following steps: Under alkaline conditions, the inorganic precursor and the organic monomer are reacted for the first time in an inert atmosphere according to a predetermined weight ratio; adding a catalyst, and carrying out the second reaction under vacuum conditions to obtain a blended material; Dispersing the blended material into a tetrahydrofuran solvent after drying to obtain a blended solution consisting of a polymer and a ceramic material; A blended liquid composed of a polymer and a ceramic material is deposited on the first organic thin film to obtain a first blended film. 9 . The method for preparing a packaging film according to claim 8 , wherein the inorganic precursor is ethyl orthosilicate, aluminum nitrate, zinc acetate, sodium tungstate or tetrabutyl titanate. 10 . 10 . The method for preparing an encapsulation film according to claim 8 , wherein the organic monomer is one or more of lactic acid, tetrafluoroethylene, methylsiloxane and propylene. 11 . 11. The method for preparing a packaging film according to claim 8, wherein the catalyst is one or more of stannous octoate, stannous acetate and hydrochloric acid. 12 . The method for preparing an encapsulation film according to claim 8 , wherein the temperature of the first reaction is 50-100° C. and/or the heating rate is 0.5-1° C./min. 13 . 13 . The method for preparing an encapsulation film according to claim 8 , wherein the temperature of the second reaction is 150-200° C. 14 . 14. An optoelectronic device, comprising a first electrode, a light-emitting layer and a second electrode, wherein an encapsulation film is provided on the second electrode, and the encapsulation film is any one of claims 1-6. The encapsulation film, or the encapsulation film is the encapsulation film prepared by the method of any one of claims 7-13.