CN109950368A - Gallium nitride based LED epitaxial slice and its manufacturing method - Google Patents
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 47
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 230000004888 barrier function Effects 0.000 claims abstract description 170
- 230000012010 growth Effects 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000002131 composite material Substances 0.000 claims abstract description 20
- 230000007423 decrease Effects 0.000 claims abstract description 14
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 12
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 10
- 238000002347 injection Methods 0.000 abstract description 5
- 239000007924 injection Substances 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 13
- 238000000137 annealing Methods 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- 238000005215 recombination Methods 0.000 description 6
- 230000006798 recombination Effects 0.000 description 5
- 230000005855 radiation Effects 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000002401 inhibitory effect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 230000026267 regulation of growth Effects 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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Abstract
The invention discloses a kind of gallium nitride based LED epitaxial slice and its manufacturing methods, belong to technical field of semiconductors.Gallium nitride based LED epitaxial slice includes substrate, and successively grow buffer layer on substrate, undoped GaN layer, N-type layer, multiple quantum well layer, electronic barrier layer, P-type layer and p-type contact layer, multiple quantum well layer includes the InGaN quantum well layer and composite quantum barrier layer of alternating growth, composite quantum barrier layer includes the first quantum barrier layer stacked gradually, second quantum barrier layer and third quantum barrier layer, first quantum barrier layer and third quantum barrier layer are AlInGaN layers, second quantum barrier layer is AlGaN layer, Al component in second quantum barrier layer is first gradually increased along the stacking direction of epitaxial wafer to be gradually reduced again.LED epitaxial slice provided by the invention can inhibit the light efficiency of LED under Bulk current injection to decline, and improve the luminous efficiency of LED.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of gallium nitride based LED epitaxial slice and its manufacture
Method.
Background technique
LED (Light Emitting Diode, light emitting diode) is a kind of semiconductor electronic component that can be luminous.As
A kind of efficient, environmentally friendly, green New Solid lighting source, is widely applied rapidly, such as traffic lights, automobile
Inside and outside lamp, landscape light in city, cell phone back light source etc..
Epitaxial wafer is the main composition part in LED, and existing GaN base LED epitaxial wafer includes substrate and stacks gradually
Buffer layer, undoped GaN layer, N-type layer, multiple quantum well layer, electronic barrier layer and P-type layer on substrate.Wherein, Multiple-quantum
Well layer includes the InGaN quantum well layer and GaN quantum barrier layer of alternating growth.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
Existing lattice mismatch can generate polarized electric field between quantum well layer and quantum barrier layer interface, and polarized electric field leads to energy
Band bends, and makes electronics be easy to be leaked to P-type layer from luminescent layer, will not send out when being leaked to the electronics and hole-recombination of P-type layer
Light.And as electric current increase can aggravate the leakage of electronics, so that the luminous efficiency of LED further decreases, this phenomenon is referred to as
Efficiency droop (efficiency decline).
Summary of the invention
The embodiment of the invention provides a kind of gallium nitride based LED epitaxial slice and its manufacturing methods, can inhibit big
Electric current injects the light efficiency decline of lower LED, improves the luminous efficiency of LED.The technical solution is as follows:
On the one hand, the present invention provides a kind of gallium nitride based LED epitaxial slice, two poles of gallium nitride base light emitting
Pipe epitaxial wafer includes substrate and successively grows buffer layer over the substrate, undoped GaN layer, N-type layer, Multiple-quantum
Well layer, electronic barrier layer, P-type layer and p-type contact layer,
The multiple quantum well layer includes the InGaN quantum well layer and composite quantum barrier layer of alternating growth, the composite quantum
Barrier layer includes the first quantum barrier layer, the second quantum barrier layer and third quantum barrier layer stacked gradually, first quantum barrier layer and
The third quantum barrier layer is AlInGaN layers, and second quantum barrier layer is AlGaN layer, in second quantum barrier layer
Al component is first gradually increased along the stacking direction of epitaxial wafer and is gradually reduced again.
Further, the Al component in second quantum barrier layer is first gradually increased by 0 to 0.05~0.15, then is gradually subtracted
As low as 0.
Further, the Al component in first quantum barrier layer and the third quantum barrier layer is 0.02~0.05,
In component is 0.05~0.1.
Further, the thickness of first quantum barrier layer and the third quantum barrier layer is equal, and second quantum is built
The thickness of layer is greater than the thickness of first quantum barrier layer.
Further, second quantum barrier layer with a thickness of 6~8nm.
Further, the thickness of first quantum barrier layer and the third quantum barrier layer is 0.2~0.4nm.
On the other hand, the present invention provides a kind of manufacturing method of gallium nitride based LED epitaxial slice, the manufactures
Method includes:
One substrate is provided；
Successively grown buffer layer, undoped GaN layer, N-type layer over the substrate；
Multiple quantum well layer is grown in the N-type layer, the multiple quantum well layer includes the InGaN quantum well layer of alternating growth
With composite quantum barrier layer, the composite quantum barrier layer includes the first quantum barrier layer, the second quantum barrier layer and third stacked gradually
Quantum barrier layer, first quantum barrier layer and the third quantum barrier layer are AlInGaN layers, and second quantum barrier layer is
AlGaN layer, the Al component in second quantum barrier layer is first gradually increased along the stacking direction of epitaxial wafer to be gradually reduced again；
Electronic barrier layer, P-type layer and p-type contact layer are successively grown on the multiple quantum well layer.
Further, growing second quantum barrier layer includes:
Use trimethyl aluminium for the source Al, control the flow of the trimethyl aluminium being passed through first be gradually increased to 12 by 0~
20sccm/s, then it is gradually decrease to 0.
Further, the growth temperature of first quantum barrier layer and the growth temperature of the third quantum barrier layer are equal,
The growth temperature of second quantum barrier layer is greater than the growth temperature of first quantum barrier layer.
Further, the growth temperature of first quantum barrier layer and the growth temperature of the third quantum barrier layer are
820~850 DEG C, the growth temperature of second quantum barrier layer is 850~880 DEG C.
Technical solution provided in an embodiment of the present invention has the benefit that
By setting composite construction for the quantum barrier layer in multiple quantum well layer, wherein the second quantum barrier layer is AlGaN layer,
Al component in second quantum barrier layer is first gradually increased along the stacking direction of epitaxial wafer to be gradually reduced again, can form a triangle
On the one hand carrier can more effectively be limited in quantum well layer under the conditions of not increasing polarized and carry out by the barrier layer of shape
Radiation recombination improves the luminous efficiency of LED；On the other hand it can increase quantum barrier layer to the blocking capability of electronics, prevent electronics
Leakage improves droop effect, finally plays the light efficiency decline for inhibiting LED under Bulk current injection, improves the luminous efficiency of LED
Effect.The first quantum barrier layer and third quantum barrier layer are AlInGaN layers simultaneously, can reduce InGaN quantum well layer and second
Polarity effect between quantum barrier layer, to further improve droop effect.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention；
Fig. 2 is a kind of manufacturing method flow chart of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Fig. 1 is a kind of structural schematic diagram of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention, such as Fig. 1
Buffer layer 2, undoped shown, that gallium nitride based LED epitaxial slice includes substrate 1 and is successively grown on substrate 1
GaN layer 3, N-type layer 4, multiple quantum well layer 5, electronic barrier layer 6, P-type layer 7 and p-type contact layer 8.
Multiple quantum well layer 5 includes the InGaN quantum well layer 51 and composite quantum barrier layer 52 of alternating growth, composite quantum barrier layer
52 include the first quantum barrier layer 521, the second quantum barrier layer 522 and the third quantum barrier layer 523 stacked gradually, the first quantum barrier layer
It is AlInGaN layers with third quantum barrier layer, the second quantum barrier layer is AlGaN layer, and the Al component in the second quantum barrier layer is along outer
The stacking direction for prolonging piece is first gradually increased to be gradually reduced again.
The embodiment of the present invention is by setting composite construction for the quantum barrier layer in multiple quantum well layer, wherein the second quantum is built
Layer is AlGaN layer, and the Al component in the second quantum barrier layer is first gradually increased along the stacking direction of epitaxial wafer to be gradually reduced again, can be with
The barrier layer of a triangle is formed, it on the one hand can be under the conditions of not increasing polarized more effectively by the carrier amount of being limited in
Radiation recombination is carried out in sub- well layer, improves the luminous efficiency of LED；On the other hand it can increase quantum barrier layer to the blocking energy of electronics
Power prevents electronics from revealing, and improves droop effect, finally plays the light efficiency decline for inhibiting LED under Bulk current injection, improves LED's
The effect of luminous efficiency.The first quantum barrier layer and third quantum barrier layer are AlInGaN layers simultaneously, can reduce InGaN quantum
Polarity effect between well layer and the second quantum barrier layer, to further improve droop effect.
Optionally, the quantum well layer 51 of multiple quantum well layer 5 including n period alternating growth and composite quantum barrier layer 52,7≤
n≤11.If the value of n is excessive, the thickness that will lead to multiple quantum well layer 5 is blocked up, the decline of multiple quantum well layer crystal quality, so that
The luminous efficiency of LED is lower.If the value of n is too small, the utilization rate of the thinner thickness of multiple quantum well layer 5, carrier is not achieved
Maximum, the luminous efficiency that will lead to LED are lower.
Illustratively, n=9 can guarantee that electrons and holes carry out sufficient radiation recombination and shine at this time.
Further, the Al component in the second quantum barrier layer 522 is first gradually increased by 0 to 0.05~0.15, then is gradually subtracted
As low as 0.
Further, the Al component in the first quantum barrier layer 521 and third quantum barrier layer 523 is 0.02~0.05, In
Component is 0.05~0.1.
Further, the first quantum barrier layer 521 is equal with the thickness of third quantum barrier layer 523, the second quantum barrier layer 522
Thickness is greater than the thickness of the first quantum barrier layer 521.
Further, the second quantum barrier layer 522 with a thickness of 6~8nm.
Further, the thickness of the first quantum barrier layer 521 and third quantum barrier layer 523 is 0.2~0.4nm.
Optionally, the overall thickness of composite quantum barrier layer 52 is 7~10nm.If the thickness of composite quantum barrier layer 52 is blocked up,
It will affect the injection efficiency of carrier, to reduce the luminous efficiency of LED.If the thickness of composite quantum barrier layer 52 is excessively thin, whole
The poor crystal quality that body Quantum Well is built, the luminous efficiency for also resulting in LED reduce.
Optionally, the thickness of quantum well layer 51 can be 3~5nm.It, may be due to if the thickness of quantum well layer 51 is excessively thin
The thickness of quantum well layer 51 is too small and influences the recombination luminescence of electrons and holes in quantum well layer 51, reduces the luminous effect of LED
Rate.If the thickness of quantum well layer 51 is blocked up, may be caused in quantum well layer 51 since the thickness of quantum well layer 51 is too big
More stress are generated, influence the crystal quality of quantum well layer 81 to influence the luminous efficiency of LED.
Optionally, buffer layer 2 can be GaN layer, with a thickness of 25nm.
Optionally, undoped GaN layer 3 with a thickness of 1um.
Optionally, N-type layer 4 can be to mix the GaN layer of Si, with a thickness of 2um.
Optionally, electronic barrier layer 6 can be AlInGaN layers, with a thickness of 100nm.
Optionally, P-type layer 7 can be to mix the GaN layer of Mg, with a thickness of 0.2um.
Optionally, p-type contact layer 8 can be the GaN layer of heavily doped Mg, with a thickness of 15nm.
In the present embodiment, epitaxial wafer can also include the stress release being arranged between N-type layer 4 and multiple quantum well layer 5
Layer 9, stress release layer 9 include the InGaN layer 91 and GaN layer 92 of multiple period alternating growths.InGaN layer 91 with a thickness of 2nm,
GaN layer 92 with a thickness of 30nm.
Fig. 2 is a kind of manufacturing method flow chart of gallium nitride based LED epitaxial slice provided in an embodiment of the present invention,
As shown in Fig. 2, the manufacturing method includes:
Step 201 provides a substrate.
Wherein, substrate is Sapphire Substrate.
The present invention uses MOCVD (Metal-organicChemicalVaporDeposition, metallo-organic compound
Learn gaseous phase deposition) epitaxial wafer is grown in equipment.Using high-purity H2Or high-purity N2As carrier gas, high-purity N H3As the source N, trimethyl gallium
(TMGa) and triethyl-gallium (TEGa) is used as gallium source, and trimethyl indium (TMIn) is used as indium source, silane (SiH4) it is used as n-type doping
Agent, trimethyl aluminium (TMAl) are used as silicon source, two luxuriant magnesium (CP2Mg) it is used as P-type dopant.
Specifically, step 201 further include:
Place the substrate into the reaction chamber of MOCVD and made annealing treatment, annealing temperature be 1050 DEG C, pressure be 200~
500torr, annealing time are 5~10min.Then nitrogen treatment is carried out to substrate.
Step 202, on substrate grown buffer layer.
In the present embodiment, buffer layer is GaN layer.
Specifically, reaction chamber temperature is dropped to 540 DEG C, pressure is controlled in 100~200torr, is grown on substrate
The buffer layer of 25nm.
Further, step 202 can also include:
After buffer growth, stopping is passed through TMGa, and reaction chamber temperature is increased to 1040 DEG C, has buffering to growth
The substrate of layer carries out in-situ annealing processing, annealing time 8min.
Step 203 grows undoped GaN layer on the buffer layer.
Specifically, reaction chamber temperature is controlled at 1080~1120 DEG C, pressure is controlled in 150~300torr, growth thickness
For the undoped GaN layer of 1um.
Step 204 grows N-type layer in undoped GaN layer.
In the present embodiment, N-type layer is to mix the GaN layer of Si.
Specifically, reaction chamber temperature is controlled at 1070~1110 DEG C, pressure is controlled in 150~300torr, growth thickness
For the N-type layer of 2um.
Step 205, the growth stress releasing layer in N-type layer.
In the present embodiment, stress release layer includes the InGaN layer and GaN layer of 6 period alternating growths.
Specifically, reaction chamber temperature is controlled at 850~900 DEG C, in 300torr, growth thickness is 2nm's for pressure control
InGaN layer.By reaction chamber temperature control at 850~900 DEG C, in 300torr, growth thickness is the GaN layer of 30nm for pressure control.
Step 206 grows multiple quantum well layer on stress release layer.
In the present embodiment, multiple quantum well layer includes the InGaN quantum well layer and composite quantum barrier layer of alternating growth, compound
Quantum barrier layer includes the first quantum barrier layer, the second quantum barrier layer and third quantum barrier layer stacked gradually, the first quantum barrier layer and
Third quantum barrier layer is AlInGaN layers, and the second quantum barrier layer is AlGaN layer, and the Al component in the second quantum barrier layer is along extension
The stacking direction of piece is first gradually increased to be gradually reduced again.
Optionally, multiple quantum well layer includes the InGaN quantum well layer and AlGaN quantum barrier layer of n period alternating growth, and 7
≤n≤11。
Further, the Al component in the second quantum barrier layer is first gradually increased by 0 to 0.05~0.15, then is gradually decrease to
0。
Further, the Al component in the first quantum barrier layer and third quantum barrier layer is that 0.02~0.05, In component is equal
It is 0.05~0.1.
Further, the thickness of the first quantum barrier layer and third quantum barrier layer is equal, and the thickness of the second quantum barrier layer is greater than
The thickness of second quantum barrier layer.
Further, the second quantum barrier layer with a thickness of 6~8nm.
Further, the thickness of the first quantum barrier layer and third quantum barrier layer is 0.2~0.4nm.
In the present embodiment, it grows every layer of AlGaN quantum as two quantum barrier layer of the source Al growth regulation using trimethyl aluminium and builds
When layer, the flow for the trimethyl aluminium being passed through first is gradually increased, then is gradually reduced.
Further, two quantum barrier layer of growth regulation includes:
Use trimethyl aluminium for the source Al, the flow for controlling the trimethyl aluminium being passed through first is gradually increased by 0 to 12~20sccm/
S, then be gradually decrease to 0, so that Al component in every layer of second quantum barrier layer is first gradually increased by 0 to 0.05~0.15, then
It is gradually decrease to 0.
Specifically, step 206 may include:
Controlling reaction chamber temperature is 750~820 DEG C, and control chamber pressure is 150~300torr, growth thickness for 2~
The InGaN quantum well layer of 3nm.
Control reaction chamber temperature be 820~920 DEG C, control chamber pressure be 150~300, growth thickness be 7~
The composite quantum barrier layer of 10nm.
Wherein, the growth temperature of the first quantum barrier layer and the growth temperature of third quantum barrier layer are equal, the second quantum barrier layer
Growth temperature be greater than the first quantum barrier layer growth temperature.
Optionally, the growth temperature of the first quantum barrier layer and the growth temperature of third quantum barrier layer are 820~850 DEG C,
The growth temperature of second quantum barrier layer is 850~880 DEG C.
Step 207 grows electronic barrier layer on multiple quantum well layer.
In the present embodiment, electronic barrier layer can be AlInGaN layers.
Specifically, reaction chamber temperature is controlled at 950~1000 DEG C, pressure is controlled in 100~200torr, growth thickness
For the electronic barrier layer of 100nm.
Step 208, the growing P-type layer on electronic barrier layer.
In the present embodiment, P-type layer is to mix the GaN layer of Mg.
Specifically, reaction chamber temperature is controlled at 900~970 DEG C, pressure is controlled in 200~600torr, and growth thickness is
The P-type layer of 0.2um.
Step 209, the growing P-type contact layer in P-type layer.
In the present embodiment, p-type contact layer is the GaN layer of heavily doped Mg.
Specifically, reaction chamber temperature is controlled at 800~900 DEG C, pressure is controlled in 200~300torr, and growth thickness is
The p-type contact layer of 15nm.
After above-mentioned steps completion, the temperature of reaction chamber is down to 650~850 DEG C, is carried out at annealing in nitrogen atmosphere
5~15min is managed, room temperature is then gradually decreased to, terminates the epitaxial growth of light emitting diode.
The embodiment of the present invention is by setting composite construction for the quantum barrier layer in multiple quantum well layer, wherein the second quantum is built
Layer is AlGaN layer, and the Al component in the second quantum barrier layer is first gradually increased along the stacking direction of epitaxial wafer to be gradually reduced again, can be with
The barrier layer of a triangle is formed, it on the one hand can be under the conditions of not increasing polarized more effectively by the carrier amount of being limited in
Radiation recombination is carried out in sub- well layer, improves the luminous efficiency of LED；On the other hand it can increase quantum barrier layer to the blocking energy of electronics
Power prevents electronics from revealing, and improves droop effect, finally plays the light efficiency decline for inhibiting LED under Bulk current injection, improves LED's
The effect of luminous efficiency.The first quantum barrier layer and third quantum barrier layer are AlInGaN layers simultaneously, can reduce InGaN quantum
Polarity effect between well layer and the second quantum barrier layer, to further improve droop effect.
The foregoing is merely a prefered embodiment of the invention, is not intended to limit the invention, all in the spirit and principles in the present invention
Within, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of gallium nitride based LED epitaxial slice, the gallium nitride based LED epitaxial slice include substrate and
Successively grow buffer layer, undoped GaN layer, N-type layer, multiple quantum well layer, electronic barrier layer, P-type layer over the substrate
With p-type contact layer, which is characterized in that
The multiple quantum well layer includes the InGaN quantum well layer and composite quantum barrier layer of alternating growth, the composite quantum barrier layer
Including the first quantum barrier layer, the second quantum barrier layer and third quantum barrier layer stacked gradually, first quantum barrier layer and described
Third quantum barrier layer is AlInGaN layers, and second quantum barrier layer is AlGaN layer, the Al group in second quantum barrier layer
Divide the stacking direction along epitaxial wafer to be first gradually increased to be gradually reduced again.
2. gallium nitride based LED epitaxial slice according to claim 1, which is characterized in that second quantum barrier layer
In Al component be first gradually increased by 0 to 0.05~0.15, then be gradually decrease to 0.
3. gallium nitride based LED epitaxial slice according to claim 1, which is characterized in that first quantum barrier layer
It is 0.02~0.05, In component with the Al component in the third quantum barrier layer is 0.05~0.1.
4. described in any item gallium nitride based LED epitaxial slices according to claim 1~3, which is characterized in that described
The thickness of one quantum barrier layer and the third quantum barrier layer is equal, and the thickness of second quantum barrier layer is greater than first quantum
The thickness of barrier layer.
5. gallium nitride based LED epitaxial slice according to claim 4, which is characterized in that second quantum barrier layer
With a thickness of 6~8nm.
6. gallium nitride based LED epitaxial slice according to claim 4, which is characterized in that first quantum barrier layer
Thickness with the third quantum barrier layer is 0.2~0.4nm.
7. a kind of manufacturing method of gallium nitride based LED epitaxial slice, which is characterized in that the manufacturing method includes:
One substrate is provided；
Successively grown buffer layer, undoped GaN layer, N-type layer over the substrate；
Multiple quantum well layer is grown in the N-type layer, the multiple quantum well layer includes the InGaN quantum well layer of alternating growth and answers
Quantum barrier layer is closed, the composite quantum barrier layer includes the first quantum barrier layer, the second quantum barrier layer and third quantum stacked gradually
Barrier layer, first quantum barrier layer and the third quantum barrier layer are AlInGaN layers, and second quantum barrier layer is AlGaN
Layer, the Al component in second quantum barrier layer is first gradually increased along the stacking direction of epitaxial wafer to be gradually reduced again；
Electronic barrier layer, P-type layer and p-type contact layer are successively grown on the multiple quantum well layer.
8. manufacturing method according to claim 7, which is characterized in that growing second quantum barrier layer includes:
Use trimethyl aluminium for the source Al, the flow for controlling the trimethyl aluminium being passed through first is gradually increased by 0 to 12~20sccm/
S, then it is gradually decrease to 0.
9. manufacturing method according to claim 7, which is characterized in that the growth temperature of first quantum barrier layer and described
The growth temperature of third quantum barrier layer is equal, and the growth temperature of second quantum barrier layer is greater than the life of first quantum barrier layer
Long temperature.
10. manufacturing method according to claim 9, which is characterized in that the growth temperature of first quantum barrier layer and institute
The growth temperature for stating third quantum barrier layer is 820~850 DEG C, and the growth temperature of second quantum barrier layer is 850~880
℃。
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| CN111261757A (en) * | 2020-02-03 | 2020-06-09 | 厦门乾照光电股份有限公司 | A kind of ultraviolet LED and preparation method thereof |
| CN112582505A (en) * | 2020-11-13 | 2021-03-30 | 华灿光电（浙江）有限公司 | Growth method of light emitting diode epitaxial wafer |
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