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CN109922572A - A kind of μ LED current pattern pixel drive circuit system - Google Patents

A kind of μ LED current pattern pixel drive circuit system Download PDF

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Publication number
CN109922572A
CN109922572A CN201910278958.XA CN201910278958A CN109922572A CN 109922572 A CN109922572 A CN 109922572A CN 201910278958 A CN201910278958 A CN 201910278958A CN 109922572 A CN109922572 A CN 109922572A
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mos transistor
current
μled
mos
reference current
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琚晶
刘洪云
李起鸣
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Shanghai Xianyao Display Technology Co Ltd
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Shanghai Xianyao Display Technology Co Ltd
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Abstract

本发明提供了一种μLED电流模式像素驱动电路系统,包括:参考电流产生电路、像素电流驱动单元、8位SRAM单元、计数器和比较器。像素电流驱动单元包括级联电流镜电路和开关控制管;级联电流镜电路与参考电流产生电路的电流保持相同。比较器将8位SRAM单元存储的数据与计数器的数据相比较,将8位像素灰度信号转换为PWM信号,通过PWM信号来控制开关控制管,从而实现PWM电流控制μLED的亮度。本发明可以将参考电流产生电路的恒定电流精确复制到级联电流镜电路,并且通过比较器产生的PWM信号来控制开关控制管的通断时间,从而实现了电流的脉冲调制,改善了传统电压控制电路引起的显示器显示亮度控制难度增加和显示不均匀的问题,能够获得更好的显示效果和对比度。

The invention provides a μLED current mode pixel driving circuit system, which includes: a reference current generating circuit, a pixel current driving unit, an 8-bit SRAM unit, a counter and a comparator. The pixel current driving unit includes a cascaded current mirror circuit and a switch control tube; the currents of the cascaded current mirror circuit and the reference current generating circuit are kept the same. The comparator compares the data stored in the 8-bit SRAM unit with the data of the counter, converts the 8-bit pixel grayscale signal into a PWM signal, and controls the switch control tube through the PWM signal, thereby realizing the PWM current to control the brightness of the μLED. The invention can accurately copy the constant current of the reference current generation circuit to the cascaded current mirror circuit, and control the on-off time of the switch control tube through the PWM signal generated by the comparator, thereby realizing the pulse modulation of the current and improving the traditional voltage The display brightness control difficulty and uneven display caused by the control circuit are increased, and better display effect and contrast ratio can be obtained.

Description

一种μLED电流模式像素驱动电路系统A μLED current mode pixel drive circuit system

技术领域technical field

本发明涉及一种驱动电路技术领域,具体涉及一种μLED电流模式像素驱动电路系统。The invention relates to the technical field of driving circuits, in particular to a μLED current mode pixel driving circuit system.

背景技术Background technique

LED驱动电源是把电源供应转换为特定的电压电流以驱动LED发光的电源转换器。LED驱动电源的输出大多数为可随LED正向压降值变化而改变电压的恒定电流源。驱动方式通行有两种,其一是一个恒压源供多个恒流源,每个恒流源单独给每路LED供电。这种组合方式灵活,当一路LED故障,不影响其他LED的工作。LED drive power is a power converter that converts the power supply into a specific voltage and current to drive LED light. The output of LED drive power supply is mostly a constant current source that can change the voltage with the change of LED forward voltage drop value. There are two common driving modes, one is a constant voltage source for multiple constant current sources, and each constant current source supplies power to each LED individually. This combination method is flexible, when one LED fails, it will not affect the work of other LEDs.

驱动方式有恒流式、稳压式、脉冲驱动等。恒流驱动电路输出的电流是恒定的,而输出的直流电压却随着负载阻值的大小不同在一定范围内变化,负载阻值小,输出电压就低,负载阻值大,输出电压就高;恒流驱动电路驱动LED是较为理想的。稳压式驱动,当稳压电路中的各项参数确定以后,输出的电压时固定的,而输出的电流却随着负载的增减而变化。脉冲驱动,许多LED应用都需要具有调光功能比如LED背光或建筑照明调光。通过调整LED的亮度和对比度可以实现调光功能。降低器件的电流也许能对LED发光进行调整,但是让LED在低于额定电流的情况下工作会造成许多不良后果,例如色差问题。取代简单电流调整的方法是在LED驱动器中集成脉宽调制(PWM)控制器。PWM的信号并不直接用于控制LED,而是控制一个开关,例如一个MOSFET,从而向LED提供所需电流。PWM控制器通常在一定固定频率上工作,并且对脉宽进行调整,以匹配所需的占空比。当前大多数LED芯片都使用PWM来控制LED发光,为了确保人们不会感到明显的闪烁,PWM脉冲的频率必须大于100HZ。PWM控制的主要优点是通过PWM的调光电流更加精确,最大程度地降低LED发光时的色差。The driving methods include constant current, voltage regulation, pulse driving, etc. The output current of the constant current drive circuit is constant, but the output DC voltage varies within a certain range with the load resistance value. The load resistance value is small, the output voltage is low, and the load resistance value is large, the output voltage is high. ; Constant current drive circuit to drive LED is ideal. Voltage-stabilized drive, when the parameters in the voltage-stabilizing circuit are determined, the output voltage is fixed, while the output current changes with the increase or decrease of the load. Pulse driven, dimming is required for many LED applications such as LED backlighting or architectural lighting dimming. Dimming can be achieved by adjusting the brightness and contrast of the LEDs. Lowering the device current may adjust the LED light emission, but operating the LED at less than rated current can have many undesirable consequences, such as chromatic aberration problems. An alternative to simple current regulation is to integrate a pulse-width modulation (PWM) controller in the LED driver. The PWM signal is not used to control the LED directly, but rather a switch, such as a MOSFET, to supply the required current to the LED. PWM controllers typically operate at a fixed frequency and adjust the pulse width to match the desired duty cycle. Most of the current LED chips use PWM to control the LED light emission, in order to ensure that people do not feel obvious flickering, the frequency of the PWM pulse must be greater than 100HZ. The main advantage of PWM control is that the dimming current through PWM is more accurate, and the color difference when the LED emits light is minimized.

基于上述几种驱动方式,根据LED电流和电压特点,比较理想的是使用恒流驱动,它能避免LED正向电压的改变而引起电流变动,恒定电流使LED的亮度更加稳定。Based on the above several driving methods, according to the characteristics of LED current and voltage, it is ideal to use constant current driving, which can avoid the current fluctuation caused by the change of the forward voltage of the LED, and the constant current makes the brightness of the LED more stable.

然而传统LED采用恒电流控制方式中,采用的恒电流通常直接连接LED,导致LED工作中电流不可避免的会出现波动变化甚至大波动,这将导致显示器显示亮度不容易控制且出现不均匀的问题。However, in the traditional LED constant current control method, the constant current used is usually directly connected to the LED, resulting in inevitable fluctuations or even large fluctuations in the current during the LED operation, which will lead to the display brightness of the display is not easy to control and there will be uneven problems .

发明内容SUMMARY OF THE INVENTION

为了克服以上问题,本发明旨在提供一种μLED电流模式像素驱动电路系统,实现驱动电路的恒定电流,以及通过PWM信号精确控制驱动电路的通断。In order to overcome the above problems, the present invention aims to provide a μLED current mode pixel driving circuit system, which can realize constant current of the driving circuit and precisely control the on-off of the driving circuit through a PWM signal.

为了达到上述目的,本发明提供了一种μLED电流模式像素驱动电路系统,其包括:参考电流产生电路、像素电流驱动单元、计数器、8位SRAM单元和比较器;In order to achieve the above object, the present invention provides a μLED current mode pixel driving circuit system, which includes: a reference current generating circuit, a pixel current driving unit, a counter, an 8-bit SRAM unit and a comparator;

参考电流产生电路,用于产生参考电流;A reference current generating circuit for generating a reference current;

像素电流驱动单元,包括级联电流镜电路和开关控制管;级联电流镜电路作为参考电流产生电路的镜像分支,与所述参考电流产生电路的电流保持相同;所述参考电流产生电路为恒流电路;The pixel current driving unit includes a cascaded current mirror circuit and a switch control tube; the cascaded current mirror circuit is used as a mirror branch of the reference current generation circuit, and the current of the reference current generation circuit remains the same; the reference current generation circuit is a constant flow circuit;

比较器将8位SRAM单元所存储的数据与计数器的信号数据相比较,并且将8位像素灰度信息数据转换为PWM信号;PWM信号控制开关控制管的通断时间。The comparator compares the data stored in the 8-bit SRAM unit with the signal data of the counter, and converts the 8-bit pixel grayscale information data into a PWM signal; the PWM signal controls the on-off time of the switch control tube.

优选地,所述级联电流镜电路具体包括:相互串联的第零MOS管,第一MOS管和第二MOS管,其中第零MOS管接电源,第二MOS管接μLED,第一MOS管夹设于第零MOS管和第二MOS管之间;所述第一MOS管的栅端接所述SRAM单元。Preferably, the cascaded current mirror circuit specifically includes: a zeroth MOS transistor, a first MOS transistor and a second MOS transistor connected in series, wherein the zeroth MOS transistor is connected to the power supply, the second MOS transistor is connected to the μLED, and the first MOS transistor is connected to the μLED. It is sandwiched between the zeroth MOS transistor and the second MOS transistor; the gate of the first MOS transistor is connected to the SRAM unit.

在一些实施例中,所述计数器采用RAMP发生器,所述PWM信号通过1bit SRAM输出器来输出;其中,In some embodiments, the counter adopts a RAMP generator, and the PWM signal is output through a 1-bit SRAM output device; wherein,

所述8位SRAM单元的一端与比较器相连,另一端连接图像信号端;One end of the 8-bit SRAM cell is connected with the comparator, and the other end is connected with the image signal end;

所述RAMP发生器连接比较器;The RAMP generator is connected to the comparator;

所述比较器接收并且比较来自所述8位SRAM单元的帧信号和所述RAMP发生器的斜坡信号;当所述帧信号和所述斜坡信号相同时,发送1bit PWM信号给1bit SRAM输出器;The comparator receives and compares the frame signal from the 8-bit SRAM unit and the ramp signal of the RAMP generator; when the frame signal and the ramp signal are the same, send a 1-bit PWM signal to the 1-bit SRAM output device;

所述1bit SRAM输出器与所述比较器相连,接收来自所述比较器的1bit PWM信号并且将其发送到所述第一MOS管的栅端;The 1bit SRAM output device is connected to the comparator, receives the 1bit PWM signal from the comparator and sends it to the gate terminal of the first MOS transistor;

所述第一MOS管的栅端接收来自所述1bit SRAM的信号后,所述第一MOS管导通或关断。After the gate terminal of the first MOS transistor receives the signal from the 1-bit SRAM, the first MOS transistor is turned on or off.

在一些实施例中,所述参考电流产生电路具体包括:相互串联的第三MOS管,第四MOS管和第五MOS管;其中,第五MOS管接电源,第三MOS管接参考电流,第四MOS管接地;第四MOS管夹设于第三MOS管和第五MOS管之间;第三MOS管的栅端与第二MOS管的栅端连接;第五MOS管的栅端与第零MOS管的栅端连接。In some embodiments, the reference current generating circuit specifically includes: a third MOS transistor, a fourth MOS transistor and a fifth MOS transistor connected in series; wherein the fifth MOS transistor is connected to the power supply, the third MOS transistor is connected to the reference current, The fourth MOS transistor is grounded; the fourth MOS transistor is sandwiched between the third MOS transistor and the fifth MOS transistor; the gate terminal of the third MOS transistor is connected to the gate terminal of the second MOS transistor; the gate terminal of the fifth MOS transistor is connected to the gate terminal of the second MOS transistor. The gate terminal of the zeroth MOS transistor is connected.

在一些实施例中,第零MOS管、所述第一MOS管、所述第二MOS管、所述第五MOS管、所述第四MOS管、所述第三MOS管均为同一类型MOS管。In some embodiments, the zeroth MOS transistor, the first MOS transistor, the second MOS transistor, the fifth MOS transistor, the fourth MOS transistor, and the third MOS transistor are all of the same type of MOS Tube.

在一些实施例中,第零MOS管、所述第一MOS管、所述第二MOS管、所述第五MOS管、所述第四MOS管、所述第三MOS管均为PMOS管。In some embodiments, the zeroth MOS transistor, the first MOS transistor, the second MOS transistor, the fifth MOS transistor, the fourth MOS transistor, and the third MOS transistor are all PMOS transistors.

在一些实施例中,所述第三MOS管还连接一参考电流源;所述参考电流源的一端接地,另一端与所述第三MOS管的栅端以及源端连接。In some embodiments, the third MOS transistor is further connected to a reference current source; one end of the reference current source is grounded, and the other end is connected to the gate terminal and the source terminal of the third MOS transistor.

在一些实施例中,所述第五MOS管的栅端与第四MOS管的漏端连接。In some embodiments, the gate terminal of the fifth MOS transistor is connected to the drain terminal of the fourth MOS transistor.

在一些实施例中,所述第零MOS管的漏端接电源,所述第零MOS管的源端接所述第一MOS管的漏端,所述第一MOS管的源端接所述第二MOS管的漏端,所述第二MOS管的源端接μLED。In some embodiments, the drain terminal of the zeroth MOS transistor is connected to a power supply, the source terminal of the zeroth MOS transistor is connected to the drain terminal of the first MOS transistor, and the source terminal of the first MOS transistor is connected to the The drain terminal of the second MOS transistor, and the source terminal of the second MOS transistor is connected to the μLED.

在一些实施例中,所述第五MOS管的漏端接电源,所述第五MOS管的源端接所述第四MOS管的漏端,所述第四MOS管的漏端接所述第三MOS管的源端。In some embodiments, the drain terminal of the fifth MOS transistor is connected to a power supply, the source terminal of the fifth MOS transistor is connected to the drain terminal of the fourth MOS transistor, and the drain terminal of the fourth MOS transistor is connected to the The source end of the third MOS transistor.

在一些实施例中,所述参考电流产生电路位于像素外部,所述级联电流镜电路位于像素内。In some embodiments, the reference current generation circuit is located outside the pixel and the cascaded current mirror circuit is located within the pixel.

在一些实施例中,所述参考电流产生电路为一条,所述级联电流镜电路为多条,多条所述级联电流镜电路连接μLED阵列。In some embodiments, the reference current generation circuit is one, the cascaded current mirror circuits are multiple, and the multiple cascaded current mirror circuits are connected to the μLED array.

本发明的μLED电流模式像素驱动电路系统,可以将参考电流产生电路的恒定电流精确复制到级联电流镜电路,并且通过比较器产生的PWM信号来控制开关控制管的通断时间,从而实现了电流的脉冲调制,改善了传统电压控制电路引起的显示器显示亮度控制难度增加和显示不均匀的问题,能够获得更好的显示效果和对比度。The μLED current mode pixel driving circuit system of the present invention can accurately copy the constant current of the reference current generating circuit to the cascaded current mirror circuit, and control the on-off time of the switch control tube through the PWM signal generated by the comparator, thereby realizing The pulse modulation of the current improves the display brightness control difficulty and uneven display problems caused by the traditional voltage control circuit, and can obtain better display effect and contrast ratio.

附图说明Description of drawings

图1为本发明的一个实施例的μLED电流模式像素驱动电路系统的结构示意图1 is a schematic structural diagram of a μLED current mode pixel driving circuit system according to an embodiment of the present invention

具体实施方式Detailed ways

为使本发明的内容更加清楚易懂,以下结合说明书附图,对本发明的内容作进一步说明。当然本发明并不局限于该具体实施例,本领域内的技术人员所熟知的一般替换也涵盖在本发明的保护范围内。In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below with reference to the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general substitutions known to those skilled in the art are also covered within the protection scope of the present invention.

本发明的μLED电流模式像素驱动电路系统,包括:包括:参考电流产生电路、像素电流驱动单元、计数器、8位SRAM单元和比较器。参考电流产生电路用于产生参考电流;像素电流与驱动单元包括级联电流镜电路和开关控制管。级联电流镜电路作为参考电流产生电路的镜像分支,与参考电流产生电流的电流保持相同,擦哪考电流产生电路为恒流电路;比较器将8位SRAM单元所存储的数据与计数器的信号数据相比较,并且将8位像素灰度信息数据转换为PWM信号;PWM信号控制开关控制管的通断时间。级联电流镜电路能够将参考电流电路的恒定电流精确复制,并且通过比较器产生的PWM信号来控制开关控制管的通断时间,从而实现PWM电流控制μLED的亮度。The μLED current mode pixel driving circuit system of the present invention includes: a reference current generating circuit, a pixel current driving unit, a counter, an 8-bit SRAM unit and a comparator. The reference current generating circuit is used for generating the reference current; the pixel current and the driving unit include a cascaded current mirror circuit and a switch control tube. The cascaded current mirror circuit is used as the mirror branch of the reference current generation circuit, and the current of the reference current generation current remains the same, and the current generation circuit is a constant current circuit; the comparator compares the data stored in the 8-bit SRAM unit with the signal of the counter The data is compared, and the 8-bit pixel grayscale information data is converted into a PWM signal; the PWM signal controls the on-off time of the switch control tube. The cascaded current mirror circuit can accurately copy the constant current of the reference current circuit, and control the on-off time of the switch control tube through the PWM signal generated by the comparator, so as to realize the PWM current to control the brightness of the μLED.

以下结合附图1和具体实施例对本发明作进一步详细说明。需说明的是,附图均采用非常简化的形式、使用非精准的比例,且仅用以方便、清晰地达到辅助说明本实施例的目的。The present invention will be further described in detail below with reference to FIG. 1 and specific embodiments. It should be noted that, the accompanying drawings are in a very simplified form and use inaccurate scales, and are only used to facilitate and clearly achieve the purpose of assisting the description of the present embodiment.

请参阅图1,沿着图中虚线,参考电流产生电路(图1左侧)和级联电流镜电路(图1右侧)。具体的,参考电流产生电路具体包括:相互串联的第三MOS管M3,第四MOS管M4和第五MOS管M5;级联电流镜电路具体包括:相互串联的第零MOS管M0,第一MOS管M1和第二MOS管M2(开关控制管)。虚线两侧,参考电流产生电路与级联电流镜电路的分布对称,也即是第五MOS管M5与第零MOS管M0对应,第三MOS管M3与第二MOS管M2对应,第四MOS管M4与第一MOS管M1对应,由此构成级联电路。Referring to Figure 1, along the dotted line in the figure, the reference current generation circuit (left side of Figure 1) and the cascaded current mirror circuit (right side of Figure 1). Specifically, the reference current generating circuit specifically includes: a third MOS transistor M3, a fourth MOS transistor M4 and a fifth MOS transistor M5 connected in series; the cascaded current mirror circuit specifically includes: a zeroth MOS transistor M0 connected in series with each other, a first MOS transistor M0 MOS transistor M1 and second MOS transistor M2 (switch control transistor). On both sides of the dotted line, the distribution of the reference current generation circuit and the cascaded current mirror circuit is symmetrical, that is, the fifth MOS transistor M5 corresponds to the zeroth MOS transistor M0, the third MOS transistor M3 corresponds to the second MOS transistor M2, and the fourth MOS transistor M5 corresponds to the second MOS transistor M2. The transistor M4 corresponds to the first MOS transistor M1, thereby forming a cascade circuit.

这里,第五MOS管M5接电源VDDP,第三MOS管M3接参考电流,第四MOS管M4接地;第四MOS管M4夹设于第三MOS管M3和第五MOS管M5之间;第三MOS管M3的栅端与第二MOS管M2的栅端连接;第五MOS管M5的栅端与第零MOS管M0的栅端连接。这里,第三MOS管M3还连接一参考电流源IREF;参考电流源IREF的一端接地,另一端与第三MOS管M3的栅端以及源端连接。第五MOS管M5的栅端与第四MOS管M4的漏端连接。第五MOS管M5的漏端接电源VDDP,第五MOS管M5的源端接第四MOS管M4的漏端,第四MOS管M4的漏端接第三MOS管M3的源端。Here, the fifth MOS transistor M5 is connected to the power supply VDDP, the third MOS transistor M3 is connected to the reference current, and the fourth MOS transistor M4 is grounded; the fourth MOS transistor M4 is sandwiched between the third MOS transistor M3 and the fifth MOS transistor M5; The gate terminal of the three MOS transistor M3 is connected to the gate terminal of the second MOS transistor M2; the gate terminal of the fifth MOS transistor M5 is connected to the gate terminal of the zeroth MOS transistor M0. Here, the third MOS transistor M3 is also connected to a reference current source IREF; one end of the reference current source IREF is grounded, and the other end is connected to the gate terminal and the source terminal of the third MOS transistor M3. The gate terminal of the fifth MOS transistor M5 is connected to the drain terminal of the fourth MOS transistor M4. The drain terminal of the fifth MOS transistor M5 is connected to the power supply VDDP, the source terminal of the fifth MOS transistor M5 is connected to the drain terminal of the fourth MOS transistor M4, and the drain terminal of the fourth MOS transistor M4 is connected to the source terminal of the third MOS transistor M3.

相对应的,第零MOS管M0接电源VDDP,第二MOS管M2接μLED,第一MOS管M1夹设于第零MOS管M0和第二MOS管M2之间;第一MOS管M1的栅端接SRAM单元。第零MOS管M0的漏端接电源VDDP,第零MOS管M0的源端接第一MOS管M1的漏端,第一MOS管M1的源端接第二MOS管M2的漏端,第二MOS管M2的源端接μLED。Correspondingly, the zeroth MOS transistor M0 is connected to the power supply VDDP, the second MOS transistor M2 is connected to the μLED, and the first MOS transistor M1 is sandwiched between the zeroth MOS transistor M0 and the second MOS transistor M2; the gate of the first MOS transistor M1 Terminate the SRAM cell. The drain terminal of the zeroth MOS transistor M0 is connected to the power supply VDDP, the source terminal of the zeroth MOS transistor M0 is connected to the drain terminal of the first MOS transistor M1, the source terminal of the first MOS transistor M1 is connected to the drain terminal of the second MOS transistor M2, and the second MOS transistor M1 is connected to the drain terminal of the second MOS transistor M2. The source end of the MOS transistor M2 is connected to the μLED.

这里的,第零MOS管M0、第一MOS管M1、第二MOS管M2、第五MOS管M5、第四MOS管M4、第三MOS管M3均为同一类型MOS管,例如图1中所示PMOS管。Here, the zeroth MOS transistor M0, the first MOS transistor M1, the second MOS transistor M2, the fifth MOS transistor M5, the fourth MOS transistor M4, and the third MOS transistor M3 are all MOS transistors of the same type, such as those shown in FIG. 1 . Show PMOS tube.

接下来,请再次参阅图1,具体来看本实施例的8位SRAM单元201、计数器202和比较器203。8位SRAM单元201、RAMP发生器(计数器202)、比较器203、1bit SRAM输出器204。8位SRAM单元201的一端与比较器203相连,另一端连接图像信号端。Next, please refer to FIG. 1 again, and specifically look at the 8-bit SRAM unit 201, the counter 202 and the comparator 203 in this embodiment. The 8-bit SRAM unit 201, the RAMP generator (counter 202), the comparator 203, and the 1-bit SRAM output One end of the 8-bit SRAM unit 201 is connected to the comparator 203, and the other end is connected to the image signal end.

RAMP发生器(计数器202)连接比较器203;比较器203接收并且比较来自8位SRAM单元201的帧信号和RAMP发生器(计数器202)的斜坡信号;当帧信号和斜坡信号相同时,发送1bit PWM信号给1bit SRAM输出器204;1bit SRAM输出器204与比较器203相连,接收来自比较器203的1bit PWM信号并且将其发送到第一MOS管M1的栅端。The RAMP generator (counter 202) is connected to the comparator 203; the comparator 203 receives and compares the frame signal from the 8-bit SRAM unit 201 and the ramp signal of the RAMP generator (counter 202); when the frame signal and the ramp signal are the same, send 1 bit The PWM signal is sent to the 1-bit SRAM output device 204; the 1-bit SRAM output device 204 is connected to the comparator 203, receives the 1-bit PWM signal from the comparator 203 and sends it to the gate terminal of the first MOS transistor M1.

第一MOS管M1的栅端接收来自1bit SRAM的信号后,第一MOS管M1导通或关断。After the gate terminal of the first MOS transistor M1 receives the signal from the 1-bit SRAM, the first MOS transistor M1 is turned on or off.

如图1所示,参考电流产生电路和级联电流镜电路的相对位置中,参考电流产生电路位于像素外部,级联电流镜电路位于像素内。As shown in FIG. 1 , in the relative positions of the reference current generation circuit and the cascaded current mirror circuit, the reference current generation circuit is located outside the pixel, and the cascaded current mirror circuit is located in the pixel.

此外,在本发明的其它实施例中,参考电流产生电路为一条,级联电流镜电路为多条,多条级联电流镜电路连接μLED阵列,例如每一条电路连接一像素。In addition, in other embodiments of the present invention, there is one reference current generating circuit and multiple cascaded current mirror circuits, and the multiple cascaded current mirror circuits are connected to the μLED array, for example, each circuit is connected to a pixel.

综上所述,本发明可以将参考电流产生电路的恒定电流精确复制到级联电流镜电路,并且通过比较器产生的PWM信号来控制开关控制管的通断时间,从而实现了电流的脉冲调制,改善了传统电压控制电路引起的显示器显示亮度控制难度增加和显示不均匀的问题,能够获得更好的显示效果和对比度。To sum up, the present invention can accurately copy the constant current of the reference current generating circuit to the cascaded current mirror circuit, and control the on-off time of the switch control tube through the PWM signal generated by the comparator, thereby realizing the pulse modulation of the current. , improving the display brightness control difficulty and uneven display problems caused by the traditional voltage control circuit, and can obtain better display effect and contrast.

虽然本发明已以较佳实施例揭示如上,然所述实施例仅为了便于说明而举例而已,并非用以限定本发明,本领域的技术人员在不脱离本发明精神和范围的前提下可作若干的更动与润饰,本发明所主张的保护范围应以权利要求书所述为准。Although the present invention has been disclosed above with preferred embodiments, the embodiments are merely examples for the convenience of description, and are not intended to limit the present invention. Those skilled in the art can make With certain changes and modifications, the protection scope claimed by the present invention should be based on the claims.

Claims (12)

1.一种μLED电流模式像素驱动电路系统,其特征在于,包括:参考电流产生电路、像素电流驱动单元、计数器、8位SRAM单元和比较器;1. A μLED current mode pixel drive circuit system, characterized in that, comprising: a reference current generation circuit, a pixel current drive unit, a counter, an 8-bit SRAM unit and a comparator; 参考电流产生电路,用于产生参考电流;A reference current generating circuit for generating a reference current; 像素电流驱动单元,包括级联电流镜电路和开关控制管;级联电流镜电路作为参考电流产生电路的镜像分支,与所述参考电流产生电路的电流保持相同;所述参考电流产生电路为恒流电路;The pixel current driving unit includes a cascaded current mirror circuit and a switch control tube; the cascaded current mirror circuit is used as a mirror branch of the reference current generation circuit, and the current of the reference current generation circuit remains the same; the reference current generation circuit is a constant flow circuit; 比较器将8位SRAM单元所存储的数据与计数器的信号数据相比较,并且将8位像素灰度信息数据转换为PWM信号;PWM信号控制开关控制管的通断时间。The comparator compares the data stored in the 8-bit SRAM unit with the signal data of the counter, and converts the 8-bit pixel grayscale information data into a PWM signal; the PWM signal controls the on-off time of the switch control tube. 2.根据权利要求1所述的μLED电流模式像素驱动电路系统,其特征在于,所述级联电流镜电路具体包括:相互串联的第零MOS管,第一MOS管和第二MOS管,其中第零MOS管接电源,第二MOS管接μLED,第一MOS管夹设于第零MOS管和第二MOS管之间;所述第一MOS管的栅端接所述SRAM单元。2 . The μLED current mode pixel driving circuit system according to claim 1 , wherein the cascaded current mirror circuit specifically comprises: a zeroth MOS transistor, a first MOS transistor and a second MOS transistor connected in series, wherein The zeroth MOS tube is connected to the power supply, the second MOS tube is connected to the μLED, and the first MOS tube is sandwiched between the zeroth MOS tube and the second MOS tube; the gate terminal of the first MOS tube is connected to the SRAM cell. 3.根据权利要求1所述的μLED电流模式像素驱动电路系统,其特征在于,所述计数器采用RAMP发生器,所述PWM信号通过1bit SRAM输出器来输出;其中,3. The μLED current mode pixel drive circuit system according to claim 1, wherein the counter adopts a RAMP generator, and the PWM signal is output through a 1bit SRAM output device; wherein, 所述8位SRAM单元的一端与比较器相连,另一端连接图像信号端;One end of the 8-bit SRAM cell is connected with the comparator, and the other end is connected with the image signal end; 所述RAMP发生器连接比较器;The RAMP generator is connected to the comparator; 所述比较器接收并且比较来自所述8位SRAM单元的帧信号和所述RAMP发生器的斜坡信号;当所述帧信号和所述斜坡信号相同时,发送1bit PWM信号给1bit SRAM输出器;The comparator receives and compares the frame signal from the 8-bit SRAM unit and the ramp signal of the RAMP generator; when the frame signal and the ramp signal are the same, send a 1-bit PWM signal to the 1-bit SRAM output device; 所述1bit SRAM输出器与所述比较器相连,接收来自所述比较器的1bit PWM信号并且将其发送到所述第一MOS管的栅端;The 1bit SRAM output device is connected to the comparator, receives the 1bit PWM signal from the comparator and sends it to the gate terminal of the first MOS transistor; 所述第一MOS管的栅端接收来自所述1bit SRAM的信号后,所述第一MOS管导通或关断。After the gate terminal of the first MOS transistor receives the signal from the 1-bit SRAM, the first MOS transistor is turned on or off. 4.根据权利要求2所述的μLED电流模式像素驱动电路系统,其特征在于,所述参考电流产生电路具体包括:相互串联的第三MOS管,第四MOS管和第五MOS管;其中,第五MOS管接电源,第三MOS管接参考电流,第四MOS管接地;第四MOS管夹设于第三MOS管和第五MOS管之间;第三MOS管的栅端与第二MOS管的栅端连接;第五MOS管的栅端与第零MOS管的栅端连接。4 . The μLED current mode pixel driving circuit system according to claim 2 , wherein the reference current generating circuit specifically comprises: a third MOS transistor, a fourth MOS transistor and a fifth MOS transistor connected in series; wherein, The fifth MOS tube is connected to the power supply, the third MOS tube is connected to the reference current, and the fourth MOS tube is grounded; the fourth MOS tube is sandwiched between the third MOS tube and the fifth MOS tube; the gate end of the third MOS tube is connected to the second MOS tube The gate terminal of the MOS transistor is connected; the gate terminal of the fifth MOS transistor is connected to the gate terminal of the zeroth MOS transistor. 5.根据权利要求4所述的μLED电流模式像素驱动电路系统,其特征在于,第零MOS管、所述第一MOS管、所述第二MOS管、所述第五MOS管、所述第四MOS管、所述第三MOS管均为同一类型MOS管。5 . The μLED current mode pixel driving circuit system according to claim 4 , wherein the zeroth MOS transistor, the first MOS transistor, the second MOS transistor, the fifth MOS transistor, the The four MOS transistors and the third MOS transistor are of the same type. 6.根据权利要求5所述的μLED电流模式像素驱动电路系统,其特征在于,第零MOS管、所述第一MOS管、所述第二MOS管、所述第五MOS管、所述第四MOS管、所述第三MOS管均为PMOS管。6 . The μLED current mode pixel driving circuit system according to claim 5 , wherein the zeroth MOS transistor, the first MOS transistor, the second MOS transistor, the fifth MOS transistor, the The four MOS transistors and the third MOS transistor are both PMOS transistors. 7.根据权利要求4所述的μLED电流模式像素驱动电路系统,其特征在于,所述第三MOS管还连接一参考电流源;所述参考电流源的一端接地,另一端与所述第三MOS管的栅端以及源端连接。7 . The μLED current mode pixel driving circuit system according to claim 4 , wherein the third MOS transistor is further connected to a reference current source; one end of the reference current source is grounded, and the other end is connected to the third MOS transistor. 8 . The gate terminal and the source terminal of the MOS transistor are connected. 8.根据权利要求6所述的μLED电流模式像素驱动电路系统,其特征在于,所述第五MOS管的栅端与第四MOS管的漏端连接。8 . The μLED current mode pixel driving circuit system according to claim 6 , wherein the gate terminal of the fifth MOS transistor is connected to the drain terminal of the fourth MOS transistor. 9 . 9.根据权利要求6所述的μLED电流模式像素驱动电路系统,其特征在于,所述第零MOS管的漏端接电源,所述第零MOS管的源端接所述第一MOS管的漏端,所述第一MOS管的源端接所述第二MOS管的漏端,所述第二MOS管的源端接μLED。9 . The μLED current mode pixel driving circuit system according to claim 6 , wherein the drain terminal of the zeroth MOS transistor is connected to a power supply, and the source terminal of the zeroth MOS transistor is connected to the source terminal of the first MOS transistor. 10 . The drain terminal, the source terminal of the first MOS transistor is connected to the drain terminal of the second MOS transistor, and the source terminal of the second MOS transistor is connected to the μLED. 10.根据权利要求6所述的μLED电流模式像素驱动电路系统,其特征在于,所述第五MOS管的漏端接电源,所述第五MOS管的源端接所述第四MOS管的漏端,所述第四MOS管的漏端接所述第三MOS管的源端。10 . The μLED current mode pixel driving circuit system according to claim 6 , wherein the drain terminal of the fifth MOS transistor is connected to a power supply, and the source terminal of the fifth MOS transistor is connected to the source terminal of the fourth MOS transistor. 11 . The drain terminal, the drain terminal of the fourth MOS transistor is connected to the source terminal of the third MOS transistor. 11.根据权利要求1所述的μLED电流模式像素驱动电路系统,其特征在于,所述参考电流产生电路位于像素外部,所述级联电流镜电路位于像素内。11 . The μLED current mode pixel driving circuit system of claim 1 , wherein the reference current generating circuit is located outside the pixel, and the cascaded current mirror circuit is located inside the pixel. 12 . 12.根据权利要求1所述的μLED电流模式像素驱动电路系统,其特征在于,所述参考电流产生电路为一条,所述级联电流镜电路为多条,多条所述级联电流镜电路连接μLED阵列。12 . The μLED current mode pixel driving circuit system according to claim 1 , wherein the reference current generation circuit is one, the cascaded current mirror circuits are multiple, and the cascaded current mirror circuits are multiple. 13 . Connect the μLED array.
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