CN109863573A - The method identified by LTPS layer of the online SEM on display base plate using multi-angle of view detector and check large-area substrates - Google Patents
The method identified by LTPS layer of the online SEM on display base plate using multi-angle of view detector and check large-area substrates Download PDFInfo
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- CN109863573A CN109863573A CN201680090320.8A CN201680090320A CN109863573A CN 109863573 A CN109863573 A CN 109863573A CN 201680090320 A CN201680090320 A CN 201680090320A CN 109863573 A CN109863573 A CN 109863573A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/22—Optical, image processing or photographic arrangements associated with the tube
- H01J37/222—Image processing arrangements associated with the tube
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/22—Treatment of data
- H01J2237/221—Image processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/22—Treatment of data
- H01J2237/226—Image reconstruction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2446—Position sensitive detectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/2611—Stereoscopic measurements and/or imaging
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2809—Scanning microscopes characterised by the imaging problems involved
- H01J2237/2811—Large objects
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2814—Measurement of surface topography
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Abstract
A kind of method for checking substrate is described.The described method includes: providing substrate in vacuum chamber, the substrate is large-area substrates, wherein the substrate has film, the film has the grain structure of deposition on the substrate；A charged particle beam is generated with imaging charged particle beam microscopy, wherein the primary charged particle beam impinges upon on the substrate in the vacuum chamber；And one or more images are generated from the signal particle discharged when a charged particle beam is hit from the substrate, wherein one or more of images are feature images.
Description
Technical field
This disclosure relates to LTPS layers of identification and a kind of methods for checking substrate.More specifically, reality as described herein
The mode of applying is related to a kind of method for checking the substrate for display manufacturing, more particularly relates to display manufacturing
Large-area substrates.
Background technique
In numerous applications, it needs by veneer on substrate, such as on the glass substrate.Routinely, substrate is applying
It is coated in the different chamber of coating equipment.For some applications, gas phase deposition technology coated substrate in a vacuum is used.In mistake
It goes in several years, the price of electronic device and especially electrooptical device is greatly reduced.In addition, pixel density in the display is continuous
Increase.For TFT display, need highdensity TFT integrated.However, even if the quantity of the thin film transistor (TFT) (TFT) in device
Increase, still wish to increase yield as far as possible and reduces manufacturing cost as far as possible.
Increase pixel density is using LTPS-TFT (LTPS=low temperature polycrystalline silicon) on one side, and LTPS-TFT can be used
In such as LCD or displayer.During the manufacture of LTPS-TFT, gate electrode may be used as the contact zone to active layer
The mask that domain is adulterated to the source electrode and drain electrode of transistor.The quality of this autoregistration doping can determine the yield of manufacturing process.
Therefore, it is necessary to improve and control this technique.However, other autoregistration doping applications, i.e., other than the technique of LTPS-TFT
Application, also can benefit from improved technique.
For these techniques, check substrate with the quality of monitoring substrate (that is, the quality of sedimentary, especially LTPS layer
Quality) it is beneficial.For example, the glass substrate for being deposited with coat material layer on it is manufactured for monitor market.It is aobvious
Show that device usually manufactures on the large-area substrates that size constantly increases.In addition, the display of such as TFT display is also carrying out not
It is disconnected to improve.For example, low temperature polycrystalline silicon (LTPS) is a kind of hair that can wherein realize low energy consumption and improved characteristic about backlight
Exhibition.
The inspection of substrate can be executed for example, by optical system.However, the LTPS crystal grain of the crystal grain in grain boundaries
Structure, crystallite dimension and grain morphology are particularly difficult to be examined with optical system, because crystallite dimension is likely lower than optical resolution
Rate, so that crystal grain is sightless for optical system.Charged particle has also been used to the inspection of the fraction of substrate
Bundle device mating surface etches to carry out.Surface etches the contrast that such as crystal boundary can be enhanced, but damages glass substrate,
So that the tab portion of substrate rather than the entirety of substrate checks.Therefore, after checking substrate, it is then not possible to continue to locate
Substrate is managed, such as checks influence of the grain structure to final products.
Therefore, the requirement in view of the quality for example to the display on large-area substrates is higher and higher, it is therefore desirable to a kind of
For checking the improved method of large-area substrates.
Summary of the invention
Provide a kind of method and a kind of equipment using the method for checking substrate.Multiple sides of present disclosure
Face, benefit and feature can be apparent from claims, the description and the appended drawings.
According to one embodiment, a kind of method for checking substrate is provided.The described method includes: in vacuum chamber
Middle offer substrate, the substrate are large-area substrates, wherein the substrate has film, the film, which has, to be deposited on substrate
Grain structure；A charged particle beam is generated with imaging charged particle beam microscopy, wherein the primary charged particle beam is hit
It hits on the substrate in the vacuum chamber；And from the letter discharged when charged particle beam is hit from the substrate
Number particle generates one or more images, wherein one or more of images are feature image.
In some embodiments, inventive method as described herein can be implemented in computer-readable medium.The meter
Calculation machine readable medium has instruction stored thereon, and described instruction causes charged particle beam microscopy to execute such as when executed
The method for checking substrate of any one of method described herein.
Detailed description of the invention
In the rest part of this specification, more specifically elaborate it is complete for those of ordinary skill in the art and
Achievable disclosure, including the reference to attached drawing, in which:
Fig. 1 shows the side view of the imaging charged particle beam microscopy for embodiment as described herein.
Fig. 2 shows the detection cloth including segmentation scintillator (scintillator) for embodiment as described herein
It sets.
Fig. 3 A shows feature image according to the embodiment of the present disclosure.
Fig. 3 B shows the combination image combined by multiple feature images according to the embodiment of the present disclosure.
Fig. 4 shows the image of prior art air SEM measurement, wherein one sample surfaces being etched of measurement.
Fig. 5 shows explanation according to the flow chart of the method for embodiment as described herein, especially for checking big face
The method of product substrate.
Fig. 6 shows explanation according to the flow chart of the other method of embodiment as described herein, is especially used for school
Method that is quasi- and checking large-area substrates (such as large-area substrates for display manufacturing).
Specific embodiment
Below with detailed reference to various embodiments, one or more examples of these embodiments are illustrated in attached drawing.
Each example is to provide in a manner of for explanation, and be not intended to as limitation.For example, as one in an embodiment
The feature for dividing and illustrating or describing can be used for other embodiment or be combined to produce further implementation with other embodiment
Mode.Present disclosure is intended to include such modifications and variations.
In the description of following pairs of attached drawings, identical Ref. No. refers to identical component.Only to each embodiment
Difference is described.Structure shown in the accompanying drawings is not necessarily shown with actual proportions, but for more fully understanding embodiment.
Term " substrate " as described herein covers non-flexible substrate (such as glass substrate or glass plate) and flexible base board (example
Both such as coiled material (web) and foil).Substrate can be coated substrate, and wherein one or more layers material is coated or deposited on substrate,
Such as pass through physical vapour deposition (PVD) (PVD) technique or chemical vapor deposition (CVD) technique.
Embodiment as described herein is related to large-area substrates, is especially used for the large-area substrates of monitor market.Root
According to some embodiments, large-area substrates or corresponding substrate support can have at least 1m2Size.The size can be from
About 1.375m2(1100mm × 1250mm --- the 5th generation) is to about 9m2, more specifically from about 2m2To about 9m2Or even as high as 12m2。
The substrate or substrate receiving area provided according to the structure of some embodiments as described herein, device and method can be such as this
Large-area substrates described in text.For example, large-area substrates or carrier may is that for the 5th generation (GEN 5), correspond to about 1.375m2
Substrate (1.1m × 1.25m)；In 7.5th generation (GEN 7.5), corresponded to about 4.39m2Substrate (1.95m × 2.25m)；The
In 8.5 generations (GEN 8.5), correspond to about 5.7m2Substrate (2.2m × 2.5m)；Or the 10th generation (GEN10), correspond to about
9m2Substrate (2.88m × 3130m).Even higher generation, such as the 11st generation (GEN 11) and the 12nd generation (GEN 12) and its correspondence
Substrate area can be similarly effected.
In the case where not limiting the protection scope of the application, hereinafter, charged particle beam apparatus, such as charged particle
Beam microscope or its component will be illustratively referred to as charged particle beam apparatus comprising to offspring or back scattering particle
The detection of (such as electronics).Embodiment still can be applied to the equipment and component of detection of particles (corpuscles), to obtain
Sample image is obtained, particle is such as in the secondary and/or back scattering electrification of electronics or ion, photon, X-ray or other signals form
Particle.When referring to particle, particle is interpreted as optical signal, wherein particle be photon and particle (wherein particle be ion,
Atom, electronics or other particles).As described herein, about the discussion of detection and description in scanning electron microscope
Electronics and be illustratively described.Other types of charged particle, such as cation can be used for the device of various different instruments
In.
According to the embodiment herein that can be combined with other embodiment, signal (charged particle) beam or signal (band
Charged particle) beamlet (beamlet) is referred to as the secondary and/or back scattering particle beams.Typically, signal beam or secondary beams are by making
Beam or a beamlet are impinged upon on sample and are generated.Charged particle beam or a charged particle bundles are by particle
Electron gun and generate, and be guided and and sample to be checked or to be imaged on be deflected.
Fig. 1 shows charged particle beam apparatus or charged particle beam microscopy 100.Electron beam (not shown) can be by electron beam
Source 112 generates.The settable other beam shaping device (beam shaping means) in bore chamber 110, as suppressing part,
Extractor and/or anode.Beam can be aligned, the ruler of the beam limiting aperture with beam limiting aperture (beam limiting aperture)
It is very little to be designed to halved tie progress shaping, that is, to stop a part of beam.Electron beam source cabin includes TFE transmitter.Bore chamber can be by
It is evacuated to 10-8Millibar is to 10-9The pressure of millibar.
Collector lens can be set in the other vacuum chamber 120 of the lens barrel of charged particle beam microscopy 100
(condenser lens).For example, collector lens may include pole piece 122 and coil 124.It can in the other vacuum chamber
Other electro optical element 126 is arranged.Other electro optical element 126 can be selected from the group being made of following item
It selects: stigmator, for the correcting element of color difference and/or spherical aberration and for by a charged particle beam and object lens
The alignment deflector of the optical axis alignment of (objective lens) 140.
Once electron beam can be focused on the substrate 10 by object lens 140.Substrate 10 is located in the base on substrate support 150
On Board position.When electron beam strikes on substrate 10, signal electron (such as secondary and/or backscattered electron) and/or x-ray
It is discharged from substrate 10, so as to be detected by detector 139.
In the illustrative embodiments of reference Fig. 1 description, collector lens 123 is provided.Collector lens with for example limit
Two-stage deflection system (two-stage deflection system) can be set between beam orifice (such as beam shaping aperture)
(not shown), to be used for beam alignment aperture.As shown in Figure 1, object lens 140 have magnetic lens component, the magnetic lens portion
Part has pole piece 142 and 146, and has coil 144.Object lens focus once electron beam on the substrate 10.In addition, top electrode
152 and lower electrode 154 formed object lens 140 electrostatic lenses component.
It is furthermore possible to also provide scan deflection device assembly 170.Scan deflection device assembly 170 may, for example, be magnet assembly, but
Preferably electrostatic scan deflectors component is configured to realize high pixel rate.Scan deflection device assembly 170 can be single-stage
Component, as shown in Figure 1.Alternatively, it is also possible to which two-stage deflection device assembly even three-level deflection device assembly is arranged for scanning.It is each
The different location along optical axis is arranged in grade (stage).
Lower electrode 154 is connected to voltage source (not shown).Object lens are used as immersion lens component (that is, decelerating field
(retarding field) lenticular unit) the lower electrode of retarding electrode be generally in a certain current potential, the current potential provides substrate
On the charged particle equal to or less than 2keV (such as 500V or 1keV) landing energy.As Fig. 1 illustratively shown in, according to
Some embodiments, substrate support 150 can be set to earthing potential.Therefore, lower electrode 154 can have about 200V extremely
The positive voltage of 1kV, such as to generate the landing energy of 200eV to 1keV.
According to some embodiments that can be combined with other embodiment as described herein, can make near substrate 10
(such as in object lens, after object lens, or combinations thereof) a charged particle beam slow down.Can respectively by lower electrode 154,
That is, deceleration field lens, to provide deceleration.For example, deceleration can be provided by the electrostatic lenses component of object lens.For example, in addition
Ground or alternatively, can apply deceleration bias voltage to substrate 10 and/or substrate support, in order to provide according to as described herein
The decelerating field lenticular unit of embodiment.Object lens can be electrostatic-magnetic coupling lens, the electrostatic-magnetic coupling lens tool
There are such as axial gap or radial clearance or object lens to can be electrostatic deceleration field lens.
According to some embodiments that can be combined with other embodiment as described herein, the lower part of object lens or edge (example
Following electrode 154) it with the distance between substrate or substrate support can be 1 millimeter (mm) to 3 millimeters, e.g. 1.5 millimeters.?
It is measured on large-area substrates (in this way there is area to be equal to or more than 1 square metre, the substrate for example equal to or more than 1.5 square metres)
Image resolution ratio be lower than 15 nanometers, e.g. 3 nanometers to 12 nanometers, for example, about 10 nanometers.Resolution ratio is mainly by large area
Vibration caused by the size of the substrate support of substrate and the size by substrate support and movement are to limit.
Have the advantages that the landing energy equal to or less than 2keV (especially equal or less than 1keV) is, with high-energy
Electron beam is compared, and the once electron beam struck on substrate generates stronger signal.Due to be deposited on substrate layer (such as
LTPS layers) it is very thin, and since high-energy electron penetrates into substrate depths, that is, under layer, therefore only a small amount of electronics
It can produce the detector signal for covering the information about sedimentary.In contrast, low energy electrons, such as with being equal to or small
In the electronics of the landing energy of 2keV, the shallow region into substrate is only penetrated, thus the more information about sedimentary is provided.Cause
This, even if improved figure can be provided when substrate does not carry out surface etching provided by embodiment as described herein
Picture, such as the improved image of crystal boundary.In addition, embodiment as described herein is provided in large-area substrates (that is, area is equal to
Or the substrate greater than 1 square metre) on vacuum condition under electron microscope image.Electron microscope image is provided under vacuum
Allow with the low landing energy for example equal to or less than 2keV (such as equal to or less than 1keV).
For high-resolution applications, the landing energy for example equal to or less than 2keV (such as equal to or less than 1keV) is provided
And have in lens barrel highly charged beam energy (such as the beam energy equal to or more than 10keV, such as equal to or more than
It is 30keV) beneficial.Embodiment may include before substrate 10 (such as in object lens and/or object lens and substrate 10 it
Between) coefficient be equal to or more than 5 (such as equal to or more than 10) deceleration.For other application, can also provide for example equal to
Or the low landing energy less than 2keV is without slowing down, in the case that beam energy e.g. in lens barrel is not higher than 2keV.
According to can be combined with other embodiment as described herein embodiment there is provided the electricity of the film with crystal grain
Sub- MIcrosope image.For example, providing the scanning electron microscope figure of a part of the film of deposition on large area substrates
Picture.Described image is provided under the vacuum condition for allowing low energy to be imaged, wherein the landing energy of the electron beam on film
Equal to or less than 2keV, for example, about 1keV.Therefore, compared with (< 7keV) for example is imaged with the high energy electron beam of AIR SEM,
The embodiment about low energy imaging of present disclosure provides non-destructive imaging.It therefore, can be in manufacture photoelectricity dress
Electron beam observation is provided during setting (such as the display manufactured on large area substrates).
Charged particle beam microscopy 100 as shown in Figure 1 includes the detector 139 in detection vacuum area 130.Together
When be illustrated in Fig. 2 detector 139 include scintillator device 136.Scintillator apparatus 136 has aperture 201, is e.g. located at and dodges
The aperture at the center of bright device device.Aperture 201 is used to that the path of a charged particle beam to be made to pass through detector 139.
Scintillator device 136 is segmented to have two or more scintillators segmentation 236.According to can with it is as described herein
Some embodiments of other embodiment combination, it is possible to provide scintillator segmentation, that is, four sections of detector (Quad are provided
detector).Four segmentations are so that the feature image in two dimensions of the x and y of base plan can be presented on.Each image is such as
Shown in Fig. 3 A.
Light guide 134 is connected to each scintillator segmentation 236.In addition, photoelectric multiplier (photo can be provided for each light guide
) or another signal detection component 132 multiplier.Therefore, some implementations that can be combined with the other embodiment of this paper
Mode includes sharp (Everhart-Thornley) the detector arrangement of Everhardt-Sohne, using as detector 139.Some implementations
Mode can also be used avalanche photodide (avalanche photodiode) as signal detection component or wechat guidance tape.
According to the embodiment as described herein that can be combined with other embodiment, scintillator device can be by having compared with low strap
Wide low noise scintillator manufacture, this leads to preferable signal-to-noise ratio, and the signal-to-noise ratio can be filled further by average flicker device
It sets 136 multiple segments and improves.For example, scintillator can have the die-away time of 50 nanoseconds to 100 nanoseconds, for example, about 60 are received
Second.Measurement according to the embodiment of the present disclosure can have the pixel rate of 3MHz to 10MHz, such as about 5MHz.
In some embodiments that can be combined with other embodiment as described herein, a charged particle beam can be made to incline
Tiltedly, so that a charged particle beam impinges upon on substrate under pre-determined tilt beam landing angle.For example, inclined primary electrification
The particle beams can have inclination angle (relative to the normal on substrate), that is, be greater than 5 °, such as 10 ° to 20 °, such as about 15 ° enter
Firing angle.Not inclined charged particle beam can have the incidence angle less than 3 °.According to embodiment as described herein, such as originally
Imaging charged particle beam microscopy described in text is used for one or more inclination beams to be imaged.Therefore, 3D at
Picture, the imaging of ladder and the imaging of other height structures can be improved.
According to one embodiment, tool can be generated by pre- lens deflection unit (pre-lens deflection unit)
There is the beam inclination (beam tilt) at inclination angle, the pre- lens deflection unit may include two deflection coil (deflection
Coils) beam is deflected away from optical axis.In view of this two-stage (stage), beam can be deflected and appear to from band
What the apparent location of charged particle electron gun was overlapped a little occurs.Pre- lens deflection unit can be arranged in charged particle source and object lens it
Between.Lens intrinsic deflection unit can be set in the field of object lens, so that each overlapping.Lens intrinsic deflection unit can be including
The two-stage unit of two deflection coils.Lens intrinsic deflection unit can reboot the direction of beam, so that beam passes through at optical axis
The center of object lens, that is, the center of focussing force.Reboot refer to so that charged particle beam from no beam pass through optical axis side
Hit the surface of substrate in the direction opposite to essence.The compound action of lens intrinsic deflection unit and object lens is by a charged particle beam
Optical axis is led back to, so that a charged particle beam hits sample under pre-determined tilt beam landing angle.
According to another embodiment, beam inclination can be generated by including the deflection unit of two deflectors, beam is inclined
Leave the axis that opens the light.In view of this two-stage (stage), beam can be deflected and appear to from apparent with charged particle electron gun
What position was overlapped a little occurs.Pre- lens deflection unit can be arranged between charged particle source and object lens.It is inclined in pre- lens
Turn that the wiener filter (Wien filter) for generating crossed electric and magnetic field can be set above unit.Charged particle beam passes through object lens
Off-axis path lead to the first color difference.The power dissipation effect of wiener filter introduces the second color with the first color difference identical type
Difference.By properly selecting the intensity of the electric field E and magnetic field B of wiener filter, the second color difference can be adjusted to and the first color
Difference size having the same but there is the direction opposite with the first color difference.In fact, the second color difference has substantially compensated for substrate table
The first color difference in the plane in face.Charged particle beam and travelling across the focussing force of object lens and object lens off axis by
Inclination.
According to the other embodiment that can exceptionally or alternatively apply, can also by mechanically tilt lens barrel (that is,
Optical axis relative to substrate) and introduce beam inclination.It is provided by providing inclination beam path in lens barrel to tilt charged particle beam
Faster switching between several beam angle degree, and reduce compared with mechanical movement the introducing of vibration.
According to some embodiment there is provided a kind of equipment for checking substrate, especially check and be used for display manufacturing
The equipment of substrate.This device includes vacuum chamber as described herein.This equipment further comprises being arranged in as described herein
Substrate support in vacuum chamber.This equipment further comprise it is as described herein first imaging charged particle beam microscopy and
Second imaging charged particle beam microscopy of selectivity.Second imaging charged particle beam microscopy and the first imaging charged particle beam
Microscope is spaced a distance, and the distance is at least 5 centimetres to 60 centimetres, such as about 25 centimetres to 35 centimetres.
Image as shown in Figure 3A is the image of four segmentations of the detector 139 of the grain structure of low temperature polycrystalline silicon.?
It includes amorphous silicon (a-Si) technique and low temperature polycrystalline silicon (LTPS) technique that the technology of TFT is manufactured on glass substrate.Amorphous silicon technology
Main difference between low temperature polysilicon process is the electrical characteristic of device and the complexity of technique.Low temperature polycrystalline silicon
(LTPS) TFT has higher mobility (mobility), but the technique for manufacturing low temperature polycrystalline silicon TFT is more complicated.Although non-
Crystal silicon TFT has lower mobility, but the technique for manufacturing non-crystalline silicon tft is simple.According to embodiment as described herein,
Low temperature polycrystalline silicon TFT technique can be enhanced and the control of technique is beneficial.Low temperature polycrystalline silicon TFT technique is described herein
Embodiment can be by beneficial use a example.In order to manufacture low temperature polycrystalline silicon TFT, sedimentary is because of laser emission
And it is local melting.For example, laser emission may have about 60 centimetres of width.Therefore, between charged particle beam microscopy
About 30 centimetres of distance can be enough to provide the analysis of technique in the region.
A kind of method for checking substrate is provided, the method includes generating a charged particle beam in vacuum chamber,
And one or more images are generated from signal particle, wherein this one or more image is feature image.As shown in Figure 3A, example
It such as, can be by segmented detector (for example, there are four the four sections of detectors (Quad detector) being segmented for tool) to crystal grain
The part of the film of structure is imaged and provides feature image.As the feature image of Fig. 3 A can be combined into it is as shown in Figure 3B
Combine the secondary electron image of visual angle (combined-perspective).It is described herein according to embodiment as described herein
Image can compare with the optical imagery of two or more light angles (such as four light angles) with light source,
Wherein optical imagery can be obtained from the shade of the light emitting angle numerical value of imaging grain structure.This and measure phase to tilt beam
Than being different, measured with tilting beam corresponding to stereoptics image.
In figure 3b, there has been provided a kind of algorithm protrudes the crystal boundary of the crystal grain of LTPS film.Shape as shown in Figure 3A
Looks image or combination image as shown in Figure 3B can be used for detecting LTPS layers of (such as in the display industry) or other
Film layer with grain structure.The electron beam according to observed by method described herein can be to the film with grain structure
(such as LTPS layer with multiple visual angles) is imaged.Improved topographical information can be provided.This can more accurately be assessed
Grain structure.
In order to be compared, Fig. 4 shows the measurement result of the prior art.Fig. 4 shows the image of destructive measurement,
Middle LTPS layers has been etched and has been imaged with high energy electron beam.The major part of line 42 can be presented in imaging surface, and can
To identify peak corresponding with putting 44.It is readily apparent that one or more images as shown in Figure 3A or group as shown in Figure 3B
It closes image and provides improved topographical information, and therefore be used to preferably assess grain structure.In addition, such as Fig. 3 A and
The image of acquisition shown in Fig. 3 B is nondestructive.Therefore, it can be further processed according to embodiment as described herein
Imaged film or corresponding substrate as shown in Figure 3A and Figure 3B.
According to embodiment as described herein, grain structure can by the size of crystal grain, the shape of crystal grain, crystal grain point
Cloth, the area of crystal grain and similar characteristics describe.These parameters can be via the statistical for said one or multiple parameters
Analysis method is assessed.For example, the characteristic of the crystal grain of grain structure can be confirmed as arithmetic mean of instantaneous value, quadratic average, weight and put down
Mean value and/or intermediate value.
According to the embodiment as described herein that can be combined with other embodiment, topographical information can be by software algorithm institute
It uses, for example, being used for (such as in LTPS grain structure) detection and analysis grain structure.The calculating of grain structure characteristic can also
To include watershed algorithm (watershed algorithm).Image is (that is, feature image or shape appearance figure based on one or more
The combination image of picture) calculating can provide the grain structure selected from by the group in every particular formed crystal grain at least one
A characteristic: the area of the crystal grain of grain structure, the perimeter of the crystal grain of grain structure, the minimum dimension of the crystal grain of grain structure, crystalline substance
The full-size of the crystal grain of kernel structure, grain structure crystal grain along the size of predetermined direction and the crystalline substance of the crystal grain of grain structure
The peak height on boundary.For example, two channels or multi-channel detector (such as four-way detector) are used to from top-down SEM image
In the quasi- light source (quasi illumination sources) at two or more (such as four) visual angle out of the ordinary carry out
The imaging of LTPS pattern.These two or more (such as four) visual angles provide surface information, with for be used to describe to have
There are size, uniformity, local distribution and all statistical data of the parameter of the film (that is, LTPS layers) of grain structure to be detected
And assessment.
According to some embodiments that can be combined with other embodiment as described herein, the characteristic of grain structure and/or
The statistical data of the parameter of grain structure can be used to verify the technological parameter of the manufacturing method of deposition film.Feedback can be provided
To the technique of the film with grain structure.For example, can be by being observed according to the electron beam of embodiment as described herein
(electron beam review, EBR) controls low temperature polycrystalline silicon (LTPS) TFT technique.
According to some embodiments that can be combined with other embodiment as described herein, the spy of grain structure for identification
The algorithm of the statistical data of the parameter of property or the grain structure of film can be applied to combination image as shown in Figure 3B.?
It was found that these algorithms are applied in each feature image shown in Fig. 3 A, and combine multiple values that thus a little algorithms generate
To combined value may be beneficial for assessing grain structure.
According to embodiment as described herein, the area of the crystal grain in grain structure, the crystalline substance in grain structure can be measured
The perimeter of grain and one or more sizes of the crystal grain in grain structure.For example, can measure has about 100 nanometers to 500
The crystal grain of the size of nanometer.It, can be by sweeping according to some embodiments that can be combined with other embodiment as described herein
Retouch the once electron beam above substrate and the ken (field of view) that measures there can be up to 10 microns (μm) of size.
Crystal grain is typically surround by the crystal boundary with wave crest, and wave crest can have the peak height equal to or less than 50 nanometers.Root
According to the embodiment that can be combined with other embodiment as described herein, the normal operating of charged particle beam microscopy is using non-
Tilt beam, that is, beam can have the incidence angle equal to or less than 3 ° on substrate.The height of wave crest can be according to one or more
The length of the shade of feature image and determine.The length of shade can calibrate to the peak height of measurement.
In order to calibrate, a charged particle beam can be inclined to equal to or more than 5 °, e.g. about 15 ° of angle.
Inclination beam images or the height using two or more inclination beam images measurement height profiles can be used, that is, crystal grain
Crystal boundary.Either with artificial calibration characteristics, on the film (such as low temperature polycrystalline silicon (LTPS) layer) with grain structure
Above-mentioned inclination beam images or two or more inclination beam images can be obtained on substrate.It can get from the measurement using inclination beam
The absolute value of the height of the crystal boundary of grain structure or artificial calibration characteristics,.It is removing inclination and the incidence angle of normal operating is provided
After (being, for example, less than 3 ° of gradient, such as 0 ° of gradient), then feature image can be measured, and the length of shade can be with
Measurement height before being calibrated to.
According to some embodiments, for checking that the equipment for being used for the large-area substrates of display manufacturing can be online
(in-line) equipment, that is, the test or place that the equipment that may include load lock (load lock) can be previous with another
Reason process linearly provides, and the test or treatment process subsequent with another linearly provides, the load lock to
Load and removal are imaged using imaging charged particle beam microscopy (such as scanning electron microscope (SEM)) in vacuum chamber
Substrate.Since the charged particle beam on substrate for imaging has the low energy equal to or less than 2kV, it is arranged in substrate
On structure will not be destroyed.Therefore, substrate is provided to being further processed in display manufacturer.As managed herein
Solution, the quantity of substrate to be tested can be total amount of 10% to 100% of the substrate in display manufacturer.Cause
This, though can will be used for check and including be imaged charged particle beam microscopy equipment provide as online tool, still need not
Test 100% substrate in production line.
Vacuum chamber may include one or more valves, and vacuum chamber can be connect by the valve with another chamber, especially
When this equipment is online equipment.After substrate is directed into vacuum chamber, this one or more valve can be closed.Cause
This, the atmosphere in vacuum chamber can be controlled by generation technology vacuum (such as using one or more vacuum pumps).
The benefit that substrate is checked in vacuum chamber is and for example to be compared under atmospheric pressure, and vacuum condition can contribute to
Substrate is checked using low energy charged particle beam.For example, low energy charged particle beam can have equal to or less than 2keV
Lu Nengliang is specially equal to or less than 1keV, e.g. 100eV to 800eV.It is compared with high-energy beam, low energy beam will not be worn
Thoroughly to the depths inside substrate, therefore the excellent information about the coat on such as substrate can be provided.
Fig. 5 shows the flow chart for checking the method for substrate, and substrate is, for example, the substrate for being used for display manufacturing.Such as frame
Shown in 502, large-area substrates are provided in vacuum chamber, wherein large-area substrates have film, and the film, which has, to be deposited on
Grain structure on substrate.A part of common process be can be used as to measure substrate, that is, do not need to carry out the sample of similar etching
Product preparation.In addition, measuring process as shown below is nondestructive, and substrate can carry out the laggard of electron beam observation
Row is further processed.As illustrated in box 504, a charged particle beam is generated, and a charged particle beam is hit under vacuum conditions
Hit the film on large-area substrates.Vacuum condition allows the land energy of the low energy on substrate.Such as it can provide and be equal to
Or the energy less than 2keV, the such as about energy of 1keV.The instruction of frame 506 in Fig. 5 generates one or more feature images.According to
Embodiment as described herein, feature image are generated with non-inclined beam.Non-inclined beam is beneficial to easily control electron beam
Microscope, and therefore control yield.Feature image can be provided by segmented detector, allow to obtain via one-shot measurement
Multiple visual angles of non-inclined beam.Feature image is determined for one of grain structure (such as grain structure in LTPS layers)
Or multiple characteristics or parameter.
Fig. 6 shows the flow chart for checking the another method of substrate.For with the feature image of non-inclined beam angle measurement
Shadow length calibration, a charged particle beam can be inclined by the incidence angle equal to or more than 5 °, such as 10 ° to 20 °.
This is as indicated by frame 602.With reference to 604, one or more images with the region of inclination beam are generated.As shown in block 606, from
The height of one or more image measurement structures or feature with inclination beam.In block 608, with non-inclined beam to same area
And/or feature is measured at identical structure, wherein generating one or more feature images, such as test image.As shown in block 606
The length of the shade of the image measured in block 608 is calibrated to the height that absolute value measures from one or more feature images
Degree.In block 608, test image is measured with non-inclined beam, the length of shade is allowed to be calibrated to the measurement in absolute value
Highly.The calibration is as shown at block 610.In frame 612, by calibrating and based on shadow length, crystal grain knot is measured using calibration
The height of the wave crest of the crystal boundary of structure.According to embodiment as described herein, can based on the calibration that frame 602 to frame 610 generates and
It is multiple to repeat technique shown in frame 612.Therefore, can be primary or calibration be regularly provided at predetermined intervals.It can
To be measured during checking substrate in a manufacturing process with non-inclined beam.According to the calibration completed before, calibration can be used to
Determine the height of the crystal boundary of grain structure.This is conducive to improve measuring speed, to improve yield.For example, calibration needs to carry out
Once, it and can for example once a week or even once a month or even be checked with longer time scale, wherein holding
It is continuous to measure.
Although above content in the case without departing from the scope of protection of the present invention can for some embodiments
To design other and further embodiment, and protection scope is defined by the following claims.
Claims (15)
1. a kind of method for checking substrate, which comprises
The substrate is provided in vacuum chamber, the substrate is large-area substrates, wherein the substrate has film, it is described thin
Film has the grain structure of deposition on the substrate；
Generate a charged particle beam with imaging charged particle beam microscopy, wherein the primary charged particle beam impinge upon it is described
On the substrate in vacuum chamber；And
One or more images are generated from the signal particle discharged when a charged particle beam is hit from the substrate,
Described in one or more image be feature image.
2. the method as described in claim 1, wherein landing energy when the primary charged particle beam is hit on the substrate
Amount is equal to or less than 2keV.
3. the method as described in any one of claims 1 to 2, wherein one or more images are generated with segmented detector,
The four sections of detectors (Quad detector) being segmented there are four especially having.
4. method as claimed in claim 3, wherein one or more images with a charged particle beam be equal to or it is small
It is generated in 3 ° of inclination angles.
5. method according to any one of claims 1 to 4, further comprises:
At least one characteristic of the crystal grain of the grain structure is calculated from one or more of images, the grain structure
At least one described characteristic of crystal grain is selected from: the area of the crystal grain of the grain structure, the grain structure crystal grain perimeter,
The crystal grain of the full-size of the crystal grain of the minimum dimension of the crystal grain of the grain structure, the grain structure, the grain structure
Along the peak height of the crystal boundary of the crystal grain of the size and grain structure of predetermined direction.
6. method as claimed in claim 5, wherein at least one described characteristic of the crystal grain of the grain structure is confirmed as:
Arithmetic mean of instantaneous value, quadratic average, weighted average, minimum value, maximum value, and/or intermediate value.
7. the method as described in any one of claim 5 to 6, wherein described calculate uses watershed algorithm (watershed
algorithm)。
8. the method as described in any one of claim 5 to 7, wherein two or more in one or more of images
Image is combined to form combination image, and carries out the calculating using the combination image.
9. the method as described in any one of claim 5 to 7, wherein the calculating using one or more of images into
Row, to form one or more corresponding calculated values, and wherein one or more of corresponding calculated values are combined.
10. the method as described in claim 5 to 9, further comprises:
At least one characteristic described in crystal grain by the grain structure is joined to verify the technique of the manufacturing method of the film
Number.
11. the method as described in any one of claims 1 to 10, further comprises:
Charged particle beam is tilted into the angle equal to or more than 5 °；
Measure the height of height profile；
Charged particle beam is tilted back to the angle of normal operating；
It is generated from the signal particle discharged when a charged particle beam is hit with the angle of normal operating from the substrate
One or more test images, wherein one or more of test images are feature images；And
The height measured is used to carry out school to as the length of the shade of one or more of images of feature image
It is quasi-.
12. the method as described in any one of claims 1 to 11, wherein the inspection method is the manufacturing method of display
Middle process.
13. the method as described in any one of claims 1 to 12, further comprises:
An other charged particle beam is generated with other imaging charged particle beam microscopy, wherein an other sub-band
Electrochondria beamlet impinges upon on the substrate in the vacuum chamber；And
One is generated from the other signal particle discharged when an other charged particle beam is hit from the substrate
Or multiple other images, wherein one or more of other images are feature images.
14. method as claimed in claim 13, wherein the primary charged particle beam and an other charged particle
Beam has 5 centimetres to 60 centimetres of distance at the position hit on the substrate.
15. one kind is stored with the computer-readable medium of instruction on it, described instruction causes charged particle beam when executed
Microscope executes the method for checking substrate, and the method is such as the described in any item methods of the claims.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2016/080662 WO2018108239A1 (en) | 2016-12-12 | 2016-12-12 | Ltps layer qualification on display substrates by inline sem using a multi perspective detector and method for inspecting a large area substrate |
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| CN109863573A true CN109863573A (en) | 2019-06-07 |
| CN109863573B CN109863573B (en) | 2021-10-15 |
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| Country | Link |
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| KR (1) | KR102260984B1 (en) |
| CN (1) | CN109863573B (en) |
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| WO (1) | WO2018108239A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI709154B (en) * | 2018-07-13 | 2020-11-01 | 荷蘭商Ａｓｍｌ荷蘭公司 | Sem image enhancement methods and systems |
| WO2023155078A1 (en) * | 2022-02-16 | 2023-08-24 | Applied Materials, Inc. | Method of in-line inspection of a substrate, scanning electron microscope, and computer-readable medium |
| US12230013B2 (en) | 2018-12-31 | 2025-02-18 | Asml Netherlands B.V. | Fully automated SEM sampling system for e-beam image enhancement |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2024189834A1 (en) * | 2023-03-15 | 2024-09-19 | 株式会社日立ハイテク | Detector, measurement device, and charged particle beam apparatus |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR102260984B1 (en) | 2021-06-03 |
| WO2018108239A1 (en) | 2018-06-21 |
| TWI734875B (en) | 2021-08-01 |
| KR20190052121A (en) | 2019-05-15 |
| TW201837865A (en) | 2018-10-16 |
| CN109863573B (en) | 2021-10-15 |
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