CN109861662A - Film bulk acoustic resonator and preparation method thereof - Google Patents
Film bulk acoustic resonator and preparation method thereof Download PDFInfo
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- CN109861662A CN109861662A CN201910111345.7A CN201910111345A CN109861662A CN 109861662 A CN109861662 A CN 109861662A CN 201910111345 A CN201910111345 A CN 201910111345A CN 109861662 A CN109861662 A CN 109861662A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 28
- 238000005452 bending Methods 0.000 claims abstract description 82
- 239000010409 thin film Substances 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims description 106
- 239000000463 material Substances 0.000 claims description 67
- 229910052751 metal Inorganic materials 0.000 claims description 55
- 239000002184 metal Substances 0.000 claims description 55
- 238000005530 etching Methods 0.000 claims description 49
- 230000004888 barrier function Effects 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 26
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 25
- 238000013467 fragmentation Methods 0.000 description 11
- 238000006062 fragmentation reaction Methods 0.000 description 11
- 239000010408 film Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 230000003139 buffering effect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 230000003319 supportive effect Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
本发明公开了一种薄膜体声波谐振器及其制备方法。该薄膜体声波谐振器包括：支撑层、谐振器本体和支撑体；薄膜体声波谐振器包括器件区和围绕器件区的非器件区，谐振器本体位于器件区内的支撑层上；非器件区内的支撑层包括多个条状的弯折结构，弯折结构向背离谐振器本体的一侧弯折；非器件区包括第一子区域和围绕第一子区域的第二子区域，支撑体设置于第二子区域内的所述支撑层背离谐振器本体的一侧；其中，弯折结构的延伸方向与支撑层的径向方向之间的夹角不为零，且位于谐振器本体同一侧的弯折结构相互之间无交叠。本实施例提供的薄膜体声波谐振器，可以得到厚度更小、残余应力更低的支撑层，进而提高谐振频率。
The invention discloses a thin-film bulk acoustic wave resonator and a preparation method thereof. The thin film bulk acoustic wave resonator includes: a support layer, a resonator body and a support body; the thin film bulk acoustic wave resonator includes a device region and a non-device region surrounding the device region, and the resonator body is located on the support layer in the device region; the non-device region The inner support layer includes a plurality of strip-shaped bending structures, and the bending structures are bent to the side away from the resonator body; the non-device region includes a first sub-region and a second sub-region surrounding the first sub-region, and the support body The side of the support layer disposed in the second sub-region away from the resonator body; wherein, the angle between the extension direction of the bending structure and the radial direction of the support layer is not zero, and is located on the same side of the resonator body The side bent structures do not overlap each other. The thin-film bulk acoustic wave resonator provided in this embodiment can obtain a supporting layer with a smaller thickness and lower residual stress, thereby increasing the resonance frequency.
Description
Technical field
The present embodiments relate to acoustic resonator technical field more particularly to a kind of thin film bulk acoustic wave resonator and its system
Preparation Method.
Background technique
In recent years, as mobile communication system industry develops rapidly, the filter to work in radio frequency band is proposed more
Carry out more strict requirements, thin film bulk acoustic wave resonator be it is a kind of with high quality factor, low-loss, high velocity of sound contour can it is humorous
Shake device, receive more and more attention.
Thin film bulk acoustic wave resonator generally includes resonator body and the supporting layer for being used to support resonator body.Resonator
The periodic vibration of ontology can motivate sound wave, and multiple reflections occur when propagating in resonator body for sound wave, and mutually dry
It relates to form standing wave, and then generates resonance phenomena.It, should be as much as possible by sound wave to obtain the smallest acoustic loss and maximum Q value
It stays in resonator body.The surface of the wherein side of resonator body is contacted with air, in general, the sound impedance of solid is about
5 magnitudes higher than the sound impedance of air, therefore when Acoustic Wave Propagation is to solid and air contact surfaces, 99% or more sound wave meeting
It is reflected back toward resonator body, acoustic loss is smaller.But the surface of the other side of resonator body is contacted with supporting layer, branch
Support layer is solid structure, will lead to significant component of sound scattering and goes out；Also, the thickness of supporting layer is bigger, scattering loss
Sound wave it is also relatively more.
Therefore, to reduce acoustic loss, need to reduce as much as possible the thickness of supporting layer.But in resonator body work
When making, resonator body vibration will lead to supporting layer deformation occurs, if the thickness of supporting layer is too small, the stress in supporting layer without
Method discharges in time, is easy to cause support fault rupture.
Summary of the invention
The present invention provides a kind of thin film bulk acoustic wave resonator and preparation method thereof, can reduce supporting layer thickness, improves thin
The resonance frequency of membrane body acoustic resonator.
In a first aspect, the embodiment of the invention provides a kind of thin film bulk acoustic wave resonator, comprising: supporting layer, resonator sheet
Body and supporter；
The thin film bulk acoustic wave resonator includes device region and the non-device area around the device region, the resonator sheet
Body is located on the supporting layer in the device region；
The supporting layer in the non-device area includes the bending structure of multiple strips, and the bending structure is to away from institute
State the side bending of resonator body；
The non-device area includes the first subregion and the second subregion around first subregion, the supporter
The supporting layer being set in second subregion deviates from the side of the resonator body；
Wherein, the angle between the extending direction of the bending structure and the radial direction of the supporting layer is not zero, and
The mutual no overlap of the bending structure positioned at described resonator body the same side.
Further, the material of the supporting layer is silicon nitride or silica；The material of the supporter is monocrystalline silicon.
Further, the thickness of the supporting layer is greater than or equal to 0.1 μm, and is less than or equal to 3.0 μm.
Further, the resonator body includes the first metal layer stacked gradually on the supporting layer, piezoresistive material
The bed of material and second metal layer.
Further, any side on the supporting layer edge is first along the distance of point to the supporting layer geometric center
Distance；Along the line segment extending direction of the formation of the edge point and geometric center, the edge point to the edge of the device region
Distance be second distance；The value range of the second distance and the ratio of the first distance is greater than or equal to 0.3, and small
In or equal to 0.5.
Further, along the extending direction perpendicular to the bending structure, the section of the bending structure be " V " type or
U-typed.
Further, the value of the width of the bending structure is less than or equal to 15 μm, the bending of the bending structure away from
From value be less than or equal to 5 μm.
Second aspect, the embodiment of the invention also provides a kind of preparation methods of thin film bulk acoustic wave resonator, comprising:
Substrate layer is provided；Wherein, the substrate layer include device region and around the device region setting non-device area；
The side of the substrate layer in the non-device area forms multiple grooves；Wherein, the extension side of the groove
It is not 0 to the angle between the radial direction of the substrate layer, and the groove for being located at described device region the same side is mutual
Between no overlap；
Supporting layer is formed in the side that the substrate layer is formed with the groove；Wherein, the supporting layer includes multiple
The bending structure of shape, the bending structure and the groove correspond, the extending direction of the bending structure and the groove
Extending direction it is identical, and to away from the resonator body side bend；
The supporting layer in the device region forms resonator body far from the side of the substrate layer；
The non-device area includes the first subregion and the second subregion around first subregion setting, removes institute
State the substrate layer in device region and first subregion.
Further, the material of the substrate layer is monocrystalline silicon, and the surface that the substrate layer is used to form the groove is
First surface, the first surface are burnishing surface.
Further, the material of the substrate layer is monocrystalline silicon, and the surface that the substrate layer is used to form the groove is
First surface, the first surface and the opposite second surface with the first surface are burnishing surface.
Further, the side of the substrate layer in the non-device area forms multiple grooves, comprising:
Oxidation processes are carried out to the burnishing surface of the substrate layer, so that burnishing surface side shape described in the substrate layer
At oxide layer；
The oxide layer of the first surface side is patterned, to form multiple strip through-holes；
Using the oxide layer after graphical as exposure mask, the substrate layer is etched, it is multiple to be formed on the substrate layer
The groove；
Remove the remaining oxide layer.
Further, the oxide layer using after graphical etches the substrate layer, in the substrate as exposure mask
Multiple grooves are formed on layer, comprising:
Using the oxide layer after graphical as exposure mask, the substrate layer is etched using gas etching method.
Further, the thickness of the oxide layer is greater than or equal to 0.2 μm, and is less than or equal to 0.5 μm.
Further, while the side that the substrate layer is formed with the groove forms supporting layer, further includes:
Deviate from the side of the supporting layer in the substrate layer, forms etching barrier layer；Wherein, the etching barrier layer
Material is identical as the material of the supporting layer, and the thickness of the etching barrier layer is identical as the thickness of the supporting layer.
Further, after the side that the substrate layer is formed with the groove forms supporting layer, further includes:
Remove the etching barrier layer in the device region and first subregion.
Further, the substrate layer in the device region and first subregion is removed, comprising:
Using the remaining etching barrier layer as exposure mask, remove described in the device region and first subregion
Substrate layer.
Further, the supporting layer in the device region forms resonator far from the side of the substrate layer
Ontology, comprising:
Device region in side of the supporting layer far from the substrate layer forms the first metal layer；
Piezoelectric material layer is formed far from the side of the supporting layer in the first metal layer；
Second metal layer is formed far from the side of the first metal layer in the piezoelectric material layer.
Further, institute is formed in the side that the substrate layer is formed with the groove using Low Pressure Chemical Vapor Deposition
State supporting layer.
Thin film bulk acoustic wave resonator provided in an embodiment of the present invention includes more by the supporting layer being arranged in non-device area
A bending structure can discharge residual stress, reduce supporting layer in the preparation process of thin film bulk acoustic wave resonator and work
Fragmentation risk during work therefore, it is possible to obtain that thickness is smaller, the lower supporting layer of residual stress, and then improves resonance frequency
Rate.
Detailed description of the invention
Fig. 1 is the side view of existing thin film bulk acoustic wave resonator；
Fig. 2 is the top view of thin film bulk acoustic wave resonator provided in an embodiment of the present invention；
Fig. 3 is in Fig. 2 along the cross-sectional view in the direction AA '；
Fig. 4 is the side view of another thin film bulk acoustic wave resonator provided in an embodiment of the present invention；
Fig. 5 is the structural schematic diagram of the supporting layer in non-device area provided in an embodiment of the present invention；
Fig. 6 is the side view of another thin film bulk acoustic wave resonator provided in an embodiment of the present invention；
Fig. 7 is the flow chart of the preparation method of thin film bulk acoustic wave resonator provided in an embodiment of the present invention；
Fig. 8 is structural schematic diagram corresponding to step 10 provided in an embodiment of the present invention；
Fig. 9 is structural schematic diagram corresponding to step 20 provided in an embodiment of the present invention；
Figure 10 is structural schematic diagram corresponding to step 30 provided in an embodiment of the present invention；
Figure 11 is structural schematic diagram corresponding to step 40 provided in an embodiment of the present invention；
Figure 12 is the flow chart provided in an embodiment of the present invention for forming multiple grooves；
Figure 13 is the corresponding structural schematic diagram of step 21 provided in an embodiment of the present invention；
Figure 14 is the corresponding structural schematic diagram of step 22 provided in an embodiment of the present invention；
Figure 15 is the corresponding structural schematic diagram of step 23 provided in an embodiment of the present invention；
Figure 16 is the corresponding another structural schematic diagram of step 21 provided in an embodiment of the present invention；
Figure 17 is the corresponding another structural schematic diagram of step 22 provided in an embodiment of the present invention；
Figure 18 is the structural schematic diagram provided in an embodiment of the present invention after the formation etching barrier layer of second surface side；
Figure 19 is the knot after the etching barrier layer in removal devices area provided in an embodiment of the present invention and the first subregion
Structure schematic diagram；
Figure 20 is that the structure after the substrate layer in removal devices area provided in an embodiment of the present invention and the first subregion is shown
It is intended to
Figure 21 is the flow chart of the preparation method of resonator body provided in an embodiment of the present invention；
Figure 22 is the structural schematic diagram of another thin film bulk acoustic wave resonator provided in an embodiment of the present invention.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention rather than limiting the invention.It also should be noted that in order to just
Only the parts related to the present invention are shown in description, attached drawing rather than entire infrastructure.
In the prior art, for reduce thin film bulk acoustic wave resonator (film bulk acoustic resonator,
FBAR acoustic loss) drops low reactance-resistance ratio, thin film bulk acoustic wave resonator can be usually designed to following three kinds of structures: 1, solid-state fills
Distribution type resonator, earthquake structure lower section form Prague emission layer, and Bragg reflecting layer is to replace shape by high low resistivity materials
At a kind of multilayered structure, structural stability is good, but the complicated low output at high cost of manufacturing process, and it is raw to be not easy to industrialization batch
It produces；2, air-gap FBAR first generates one layer of sacrificial layer in lower section before depositing piezoelectric layer, after completing piezoelectric pile lamination later,
Sacrificial layer is removed with special etching agent again, releases cavity；3, the FBAR of back chamber etching, upper and lower surface connect with air layer
Touching, a large amount of sound wave are reflected back.Although air-gap FBAR and the FBAR of back chamber etching are the most common structures of industry,
It is that the effect that the resonator of both structures improves sound wave resonance frequency is not still very ideal.Below to carry on the back the FBAR that chamber etches
For, further illustrate the resonator of this structure type there are the problem of.
Fig. 1 is the side view of existing thin film bulk acoustic wave resonator.Specifically, referring to FIG. 1, the film bulk acoustic resonator
Device includes supporting layer 102 and the resonator body 101 for being set to 102 side of supporting layer, and setting and 102 other side of supporting layer
Pedestal 103 at edge placement.Wherein, along Z-direction, the sum of resonator body 101 and the thickness of supporting layer 102 are d.For thin
Membrane body acoustic resonator, resonance frequency is related with the velocity of sound v of thickness d and sound wave in resonator body 101, specific next
It says, the resonance frequency of thin film bulk acoustic wave resonatorSince velocity of sound v is related with resonator body 101, for a certain specific
Thin film bulk acoustic wave resonator, after selected piezoelectric material, velocity of sound v has just been determined.It therefore, can from above-mentioned formula
Know, to improve resonance frequency f, needs to reduce as much as possible the value of d.For the value for reducing d, resonator on the one hand can reduce
On the other hand the thickness of ontology 101 can reduce the thickness of supporting layer 102.But in general, the transverse direction of supporting layer 102 is (vertical
In the face of Z-direction) size differ several orders of magnitude with the size of longitudinal (along Z-direction), 102 stress of supporting layer concentration, easily
It is chipping in process；Alternatively, when after the upper/lower electrode of resonator body 101 loads radio-frequency voltage, piezo-electric stack
Layer generates the vibration of Z-direction, and then generates sound wave and form resonance, in this process, 102 resonator ontology of supporting layer
101 can deform along Z-direction, it is easy to lead to the damage of entire device.
In view of this, the present embodiment provides a kind of thin film bulk acoustic wave resonator and preparation method thereof, to improve thin-film body
While the resonance frequency of acoustic resonator, the robustness and mechanical stability of enhanced film bulk acoustic wave resonator.
Fig. 2 is the top view of thin film bulk acoustic wave resonator provided in an embodiment of the present invention, and Fig. 3 is in Fig. 2 along the direction AA '
Cross-sectional view.Specifically, Fig. 2 and Fig. 3 are please referred to, which includes: supporting layer 201,202 and of resonator body
Supporter 203；Thin film bulk acoustic wave resonator includes device region 301 and the non-device area 302 around device region 301, resonator sheet
Body 202 is located on the supporting layer 201 in device region 301；Supporting layer 201 in non-device area 302 includes the bending of multiple strips
Structure 231, bending structure 231 are bent to the side away from resonator body 202；Non-device area 302 includes the first subregion 312
With the second subregion 322 for surrounding the first subregion 312, supporter 203 is set to the supporting layer 201 in the second subregion 322
Away from the side of resonator body 202；Wherein, between the extending direction of bending structure 231 and the radial direction of supporting layer 201
Angle is not zero, and is located at the mutual no overlap of bending structure 231 of 202 the same side of resonator body.
Specifically, by not being forming multiple angles between the radial direction of supporting layer 201 in non-device area 302
0, and the bending structure 231 of no overlap between each other, in the process for preparing supporting layer 201, bending structure 231 can make supporting layer
Stress in 201 is adequately discharged, and the risk of the fragmentation in process of supporting layer 201 is thereby reduced.Pass through setting
Supporting layer 201 including bending structure, even if reducing the thickness of supporting layer 201, it is also ensured that the stress in supporting layer 201 obtains
To abundant release, therefore, 201 fragmentation of supporting layer not will cause.After the thickness of supporting layer 201 reduces, according to formula
It is found that the available further raising of the resonance frequency of thin film bulk acoustic wave resonator.In addition, setting not overlapping bending mutually
Structure 231 is to guarantee that each bending structure 231 can sufficiently discharge stress.
In addition, bending structure 231 can also improve the toughness of entire supporting layer 201, when resonator body 202 works,
Thin film bulk acoustic wave resonator generates certain vibration along Z-direction, and vibration can be transferred to supporting layer 201, causes entire supporting layer
201 generate vibration, if the vibration of supporting layer 201 is excessively violent, will cause the fragmentation of supporting layer 201.And bending structure 231 can
To alleviate the vibration of supporting layer 201, so reduce vibrated because of resonator body 202 caused by 201 fragmentation of supporting layer risk.
Therefore, it by the way that the supporting layer 201 including bending structure 231 is arranged, when the thickness of supporting layer 201 reduces, can still reduce
The risk of 201 fragmentation of supporting layer.After the thickness of supporting layer 201 reduces, according to formulaIt is found that film bulk acoustic is humorous
The available further raising of resonance frequency of vibration device.
It should also be noted that, supporting layer 201 in device region 301 is plate shaped structure, can be convenient in this way by
Resonator body 202 is arranged on supporting layer 201.
Supporter 203 is for playing a supportive role to supporting layer 201 far from the side of resonator body 202, to avoid support
201 side far from resonator body 202 of layer are contacted with other fixed structures near thin film bulk acoustic wave resonator, and then are avoided
Sound wave is scattered out from supporting layer 201 far from the side of resonator body 202.Therefore, the condition for avoiding sound scattering is being followed
Under, supporter 203 should be set to side of the supporting layer 201 far from resonator body 202 in non-device area 302.
Further, the bending structure 231 not contacted with supporter 203, in resonator body 202 and supporting layer 201
When vibration, buffering vibration and release stress can be played the role of, it can be to avoid 201 fragmentation of supporting layer；And it is connect with supporter 203
The bending structure 231 of touching, since it connects together with supporter 203, the effect of buffering vibration and release stress is very limited.
Therefore, in order to improve the toughness of supporting layer 201,201 fragmentation of supporting layer is avoided, supporter 203 should be reduced as far as and wrap
Include the contact area of the supporting layer 201 of bending structure 231.In this regard, the present embodiment is further by non-device area for convenience of describing
302 are divided into the first subregion 312 and the second subregion 322, wherein the first subregion 312 surrounds device region 301, the second sub-district
Domain 322 surrounds the first subregion 312.And supporter 203 is only contacted with the supporting layer 201 in the second subregion 322.Also, also
The size of the second subregion 322 can be made less than the first subregion 312.It should be understood that be arranged in this way the purpose is to reduce supports
The contact area of body 203 and supporting layer 201, in the case where not departing from this invention thought, the first subregion 312 and the second son
The size in region 322 can according to need specific setting.
It should be noted that radial direction described in the present embodiment, it is understood that, the geometric center of supporting layer 201, with
The line at any point is formed by the extending direction of line segment on the edge of supporting layer 201.
Thin film bulk acoustic wave resonator provided in this embodiment includes multiple curved by the supporting layer being arranged in non-device area
Folded structure can discharge residual stress, and it is in the preparation process of thin film bulk acoustic wave resonator and worked to reduce supporting layer
Fragmentation risk in journey therefore, it is possible to obtain that thickness is smaller, the lower supporting layer of residual stress, and then improves resonance frequency.
The supporting layer 201 of thin film bulk acoustic wave resonator in Fig. 2 is rectangle, it should be appreciated that, this is only that one kind is shown
The structure of example property, in addition, supporting layer 201 can also be circle or other shapes.
Optionally, the material of supporter 203 is monocrystalline silicon, and the material of supporting layer 201 is silicon nitride or silica.
Specifically, when supporter 203 is monocrystalline silicon, to improve lattice, the supporting layer 201 contacted with monocrystalline silicon
It can be nitride material, such as silicon nitride or silica.It should be noted that the present embodiment is only illustratively to give one
Group can be used for preparing the material of supporter 203 and supporting layer 201, but this is not humorous to film bulk acoustic provided in this embodiment
The material selection of vibration device is construed as limiting.
Optionally, the thickness of supporting layer 201 is greater than or equal to 0.1 μm, and is less than or equal to 3.0 μm.
Specifically, thin film bulk acoustic wave resonator provided by the embodiment has the function of stronger chip resistant, therefore the present embodiment
The thickness of the supporting layer of the thin film bulk acoustic wave resonator of offer can also be relatively thinner, in general, can be by the thickness of supporting layer 201
Value be set greater than or be equal to 0.1 μm, and be less than or equal to 3.0 μm.
Fig. 4 is the side view of another thin film bulk acoustic wave resonator provided in an embodiment of the present invention.Optionally, Fig. 3 is please referred to
And Fig. 4, resonator body 202 provided in this embodiment include the first metal layer 212 stacked gradually on supporting layer 201, pressure
Material layer 232 and second metal layer 222.
In general, resonator body 202 is sandwich structure, the first metal layer 212 is located at supporting layer 201 and piezoelectric material layer
Between 232.The present embodiment using piezoelectric material inverse piezoelectric effect, it may be assumed that when in the first metal layer 212 and second metal layer
When applying alternating electric field between 222, piezoelectric material layer 232 between the first metal layer 212 and second metal layer 222 can be because
The variation of alternating electric field and generate periodic contractile expansion, this periodic mechanical deformation can form periodic vibration,
The bulk acoustic wave along Z-direction is inspired in turn, and sound wave propagates generation in different dielectric layers and reflects and be overlapped mutually interference formation
Standing wave generates resonance phenomena.
Optionally, the material of piezoelectric material layer 232 is aluminium nitride or zinc oxide.
Specifically, the thin film bulk acoustic wave resonator based on aluminium nitride or zinc oxide material, be it is a kind of have high-quality because
It counts, the resonator of low-loss and high velocity of sound contour energy.In addition, the material of piezoelectric material layer 232 provided in this embodiment may be used also
To be other types material.
Optionally, the material of the first metal layer 212 is aluminium, molybdenum, tungsten, gold or titanium；The material of second metal layer 222 be aluminium,
Molybdenum, tungsten, gold or titanium.
Specifically, the first metal layer 212 and second metal layer 222 can be used for being formed between piezoelectric material layer 232 and hand over
Changed electric field can be used for reflected acoustic wave, and sound wave is stayed in thin film bulk acoustic wave resonator.In the feelings for meeting above-mentioned two condition
Under condition, the material of the first metal layer 212 and second metal layer 222 can also be that other materials, the present embodiment are not made this specifically
Limitation.
Optionally, any side on 201 edge of supporting layer is first distance along the distance of point to 201 geometric center of supporting layer
L1；Along the line segment extending direction of the formation of edge point and geometric center, the distance of edge point to the edge of device region 301 is second
Distance L2；The value range of the ratio of second distance L2 and first distance L1 is greater than or equal to 0.3, and is less than or equal to 0.5.
Specifically, it in order to sufficiently discharge stress and buffering vibration, generally requires to be formed on supporting layer 201 large number of
Bending structure 231, therefore, the value of second distance L2 and the ratio of first distance L1 cannot be too small；But in order to reserve foot
The value of enough space formation resonator bodies 202, second distance L2 and the ratio of first distance L1 also cannot be excessive.
Optionally, along the extending direction perpendicular to bending structure 231, the section of bending structure 231 is " V " type or U-typed.
Specifically, with the shape of the bending structure 231 in Fig. 3 and Fig. 4 for " V " type, in other embodiments, bending structure
231 shape is also possible to U-typed.In addition, in the case where not departing from core concept of the present invention, the shape of bending structure 231
It is also possible to other shapes.
Fig. 5 is the structural schematic diagram of the supporting layer in non-device area provided in an embodiment of the present invention.Optionally, figure is please referred to
The value of 5, the width W of bending structure 231 are less than or equal to 15 μm, and the value of the bending distance D of bending structure 231 is less than or waits
In 5 μm.
It should be noted that the plane where supporting layer 201 and the interface of resonator body is the first plane, bending knot
The point farthest with the first plan range on the surface of the side of resonator body 202 of structure 231 is reference point, bends distance
D is construed as, along Z-direction, the distance between reference point and the first plane.
Specifically, if the width W of bending structure 231 is too big, in the supporting layer 201 in non-device area, " V " type bending knot
The compactness of structure 231 and the joining place of non-231 part of " V " type bending structure can be poor, is easy to cause entire supporting layer 201 broken
It splits.If the bending distance D of bending structure 231 is too big, on direction of the bending distance perpendicular to above-mentioned first plane, formed
Stress in the material of the supporting layer 201 of bending structure 231 is not easy to discharge, and will also result in 201 fragmentation of supporting layer.Therefore, lead to
The value for crossing the width W of setting bending structure 231 is less than or equal to 15 μm, and the value of the bending distance D of bending structure 231 is less than
Or it is equal to 5 μm, it can not only guarantee the compactness of supporting layer, but also can guarantee the toughness of bending structure 231.In addition, it is also necessary to say
It is bright, the value of the width W of bending structure 231 and bending distance D also can not ether it is small.If the width of bending structure 231 is curved
Folding distance is too small, when forming supporting layer 201 using sedimentation etc., will cause the thickness of 231 bottom of bending structure of " V " type compared with
Big phenomenon occurs, and causes the uniformity of entire supporting layer 201 poor, or even the material of formation supporting layer 201 can be filled up completely
Bending structure 231 makes bending structure 231 lose the effect of release stress.
It optionally, can also be according toPrinciple, to the value of the width W of bending structure 231 and bending distance D into
Row constraint.
Fig. 6 is the side view of another thin film bulk acoustic wave resonator provided in an embodiment of the present invention.Optionally, referring to FIG. 6,
The first of the first end 411 of the first metal layer 212 in Fig. 6, the first end 431 of piezoelectric material layer 232 and second metal layer 222
End 421 is located at the same side of resonator body；The first end 431 of piezoelectric material layer 232 covers the first metal layer 212 far from support
The side of the first end 411 of the side and the first metal layer 212 of layer 201；The first end 421 of second metal layer 222 covers pressure
Side of the material layer 232 far from the first metal layer 212, the side of the first end 431 of piezoelectric material layer 232, and part are propped up
Layer 201 is supportted close to the surface of the side of resonator body.Meanwhile the second end 412 of the first metal layer 212, piezoelectric material layer 232
Second end 432 and the second end 422 of second metal layer 222 be located at the same side of resonator body；The of the first metal layer 212
One end 411 and the second end 412 of the first metal layer 212 are oppositely arranged, the first end 431 and piezoelectric material of piezoelectric material layer 232
The second end 432 of layer 232 is oppositely arranged, 422 phase of second end of the first end 421 and second metal layer 222 of second metal layer 222
To setting；The second of the second end 412 of the first metal layer 212, the second end 432 of piezoelectric material layer 232 and second metal layer 222
422 dislocation arrangement of end, and the edge of the second end 432 of piezoelectric material layer 232 does not cover the second end 412 of the first metal layer 212
The edge of first end 421 far from the first metal layer 212, the edge of the second end 422 of second metal layer 222 does not cover piezoresistive material
The edge of first end 431 of the second end 432 of the bed of material 232 far from piezoelectric material layer 232.
Specifically, the resonator body obtained according to above structure, on the one hand, convenient for respectively from the first metal layer 212
The 421 extraction electrode cabling of first end of second end 412 and second metal layer 222, and then can be formed and act on piezoelectric material layer
232 alternating electric field；On the other hand, pass through the second end 412 of the first metal layer 212 of setting dislocation arrangement, piezoelectric material layer
232 second end 432 and the second end 422 of second metal layer 222, when deposition forms second metal layer 222, can to avoid by
The first metal layer 212 caused by the reasons such as incomplete of technique connect with 222 short circuit of second metal layer, guarantee resonator body
It can work normally.
Based on the same inventive concept, the embodiment of the invention also provides a kind of preparation method of thin film bulk acoustic wave resonator,
The content not being discussed in detail in the present embodiment please refers to the thin film bulk acoustic wave resonator of any embodiment of that present invention offer.Fig. 7
It is the flow chart of the preparation method of thin film bulk acoustic wave resonator provided in an embodiment of the present invention.Specifically, which includes:
Step 10 provides substrate layer；Wherein, substrate layer include device region and around device region setting non-device area.
Fig. 8 is structural schematic diagram corresponding to step 10 provided in an embodiment of the present invention.Specifically, referring to FIG. 8, substrate
Layer 204 is an entirety, and substrate layer 204 is divided into the part in the part in device region 301 and non-device area 302, is
Subsequent description for convenience.Fig. 8 is the side view of substrate layer 204, and therefore, in fig. 8, non-device area 302 is located at device region
301 " two sides ".
Step 20, substrate layer in non-device area side form multiple grooves；Wherein, the extending direction and lining of groove
Angle between the radial direction of bottom is not 0, and is located at the mutual no overlap of groove of device region the same side.
Fig. 9 is structural schematic diagram corresponding to step 20 provided in an embodiment of the present invention.Specifically, referring to FIG. 9, this reality
Example is applied to be not specifically limited the method for forming groove 214.The purpose that groove 214 is formed in the present embodiment is, in subsequent technique
In, the bending structure on supporting layer is formed by means of groove 214.
Step 30 forms reeded side formation supporting layer in substrate layer；Wherein, supporting layer includes the curved of multiple strips
Folded structure, bending structure and groove correspond, and the extending direction of bending structure and the extending direction of groove are identical, and to deviating from
The side of resonator body is bent.
Figure 10 is structural schematic diagram corresponding to step 30 provided in an embodiment of the present invention.Specifically, referring to FIG. 10, step
Rapid 30 are used to form structure as shown in Figure 10, and supporting layer 201 is located at the same side of the substrate layer 204 where groove.This implementation
The purpose of example is to form supporting layer 201, and the extending direction of the groove in step 20 directly determines prolonging for bending structure
Stretch direction, therefore, the bending structure formed using the scheme of the present embodiment is corresponded with groove, also, bending structure prolongs
It is identical as the extending direction of groove to stretch direction.
Step 40, the supporting layer in device region form resonator body far from the side of substrate layer.
Figure 11 is structural schematic diagram corresponding to step 40 provided in an embodiment of the present invention.Specifically, Figure 11 is please referred to, it is humorous
Vibration device ontology 202 is the core component of thin film bulk acoustic wave resonator provided in this embodiment, for generating resonant acoustic wave.Resonator
Ontology 202 is located at side of the supporting layer 201 far from substrate layer 204, and supporting layer 201 is for carrying resonator body 202.
Step 50, non-device area include the first subregion and the second subregion around the setting of the first subregion, remover
Substrate layer in part area and the first subregion.
Specifically, step 50 can form thin film bulk acoustic wave resonator as shown in Figure 3.Referring to FIG. 3, removal devices area
The purpose of substrate layer in 301 is to expose supporting layer 201 far from the side of resonator body 202, passes through branch to avoid sound wave
Support the substrate layer scattering in layer 201 and device region 301.The purpose for removing the substrate layer in the first subregion 312 is to make waveform
Supporting layer 201 exposure, with improve supporting layer 201 discharge stress and slowing down vibration effect, can be damaged to avoid supporting layer 201
It is bad.Retain the substrate layer in the second subregion 322 can form supporter 203, and supporter 203 is used for remote to supporting layer 201
Side from resonator body 202 plays a supportive role, side and film to avoid supporting layer 201 far from resonator body 202
Near bulk acoustic wave resonator other fixed structures contact, and then can to avoid sound wave from supporting layer 201 far from resonator body
202 side scatters out.
The preparation method of thin film bulk acoustic wave resonator provided in this embodiment has the branch of multiple bending structures by being formed
Layer is supportted, residual stress can be discharged, in the preparation process of thin film bulk acoustic wave resonator and in the course of work, branch can be reduced
The fragmentation risk of layer is supportted, thus, prepare that thickness is smaller, the lower supporting layer of residual stress, and then it is humorous to improve film bulk acoustic
The resonance frequency of vibration device.
Optionally, the material of substrate layer is monocrystalline silicon, and the surface that substrate layer is used to form groove is first surface, the first table
Face and opposite second surface with first surface, first surface is burnishing surface, alternatively, first surface and second surface are
Burnishing surface.
Specifically, compared to unpolished surface, the burnishing surface of monocrystalline silicon is relatively flat, is conducive to subsequent technique in the table
Face forms resonator body.
Specifically, it is necessary in the case where, can make first surface and second surface is burnishing surface, in this way, subsequent
Technique in, by the oxide layer of second surface removal after, relatively flat etching barrier layer can be formed in second surface,
With the substrate layer in removal devices area and the first subregion, latter embodiments are specifically referred to.
Figure 12 is the flow chart provided in an embodiment of the present invention for forming multiple grooves.Optionally, Figure 11, step are please referred to
20, the side of the substrate layer in non-device area forms multiple grooves, comprising:
Step 21 carries out oxidation processes to the burnishing surface of substrate layer, so that burnishing surface side forms oxygen in substrate layer
Change layer.
Figure 13 is the corresponding structural schematic diagram of step 21 provided in an embodiment of the present invention.Optionally, Figure 13 is please referred to, is passed through
Oxidation processes are carried out to burnishing surface, oxide layer 205 can be formed in the side where burnishing surface.
Step 22, the oxide layer for patterning first surface side, to form multiple strip through-holes in non-device area.
Figure 14 is the corresponding structural schematic diagram of step 22 provided in an embodiment of the present invention.Optionally, Figure 14 is please referred to, is formed
The purpose of strip through-hole 215 is to further form groove 215, therefore, first in 224 side of first surface of substrate layer 204
224 side of surface is the side where groove 215, and the position of strip through-hole 215 and the position of groove 215 correspond, and strip
The extending direction of through-hole 215 is identical as the extending direction of groove 215.
Step 23, using the oxide layer after graphical as exposure mask, etching substrate layer, to form multiple grooves on substrate layer.
Using oxide layer as exposure mask, etching substrate layer, to form multiple grooves on substrate layer.
Figure 15 is the corresponding structural schematic diagram of step 23 provided in an embodiment of the present invention.Optionally, Figure 15, this reality are please referred to
It applies example and patterns later oxide layer 205 as exposure mask, no longer need to specially prepare exposure mask, etching can be completed and form bending structure
Technique.
Step 24, the remaining oxide layer of removal.
Specifically, after removing remaining oxide layer 205, structure as shown in Figure 9 can be formed.
Optionally, step 23, using the oxide layer after graphical as exposure mask, etching substrate layer is more to be formed on substrate layer
A groove, comprising: using the oxide layer after graphical as exposure mask, using gas etching method etching substrate layer.
Specifically, when etching forms groove, the method for normal open over etching is removed in region corresponding with strip through-hole
Monocrystalline silicon.When only first surface usually can etch monocrystalline silicon using gas etching method there are when oxide layer.This is because
When using gas etching method etching monocrystalline silicon, second surface is usually adsorbed on vacuum environment, can be to avoid etching gas pair
Second surface causes to damage.But when substrate layer is monocrystalline silicon, and there is oxide layer in the first surface and second surface of substrate
When, can be performed etching using potassium hydroxide solution, at this point it is possible to directly by outer surface (including first surface, second surface and
Side) it is directly soaked in potassium hydroxide solution for the product of silica.Due to the list in region only corresponding with strip through-hole
Crystal silicon exposure, therefore, using potassium hydroxide solution can more efficiently, rapidly etch and remove substrate layer.Certainly, herein also
Lithographic method can be used, can specifically be selected according to the material of substrate layer.
Optionally, the thickness of oxide layer is greater than or equal to 0.2 μm, and is less than or equal to 0.5 μm.
Specifically, the thickness of oxide layer is related with the degree to substrate layer oxidation processes, and the present embodiment is exemplarily only given
A kind of optional thickness of oxide layer is gone out, in practical applications, the thickness of oxide layer can have specifically been determined according to process requirement.
Optionally, while substrate layer forms reeded side and forms supporting layer, further includes: in substrate layer away from branch
The side of layer is supportted, etching barrier layer is formed, the material of etching barrier layer is identical as the material of supporting layer and thickness.
Specifically, Figure 16 is the corresponding another structural schematic diagram of step 21 provided in an embodiment of the present invention, and Figure 17 is this hair
The corresponding another structural schematic diagram of step 22 that bright embodiment provides.Figure 16-Figure 17 is please referred to, if first surface 224 and
Two surfaces 234 are burnishing surface, and when first surface 224 forms oxide layer 205, first surface 224 and second surface 234 are often
In identical processing environment, therefore, second surface 234 will also tend to form oxide layer 205.Step 21, to substrate layer
While 204 first surface 224 forms oxide layer 205, oxide layer as shown in figure 16 can also be formed in second surface 234
205, therefore, the two sides of the substrate layer 204 in Figure 16 include oxide layer 205.For step 22, when the second of substrate layer 204
234 side of surface is there is also when oxide layer 205, oxide layer 205 in patterning 224 side of first surface, in 301 shape of non-device area
After multiple strip through-holes 215, the oxide layer of 234 side of second surface is still remained, thus can form knot as shown in figure 17
Structure.For step 24, when removing remaining oxide layer 205, the oxide layer 205 of 234 side of second surface, shape can be removed simultaneously
At structure as shown in figure 15.
Optionally, in step 30, while substrate layer forms reeded side and forms supporting layer, further includes: serving as a contrast
Bottom deviates from the side of supporting layer, forms etching barrier layer；Wherein, the material of etching barrier layer and the material of supporting layer are identical,
The thickness of etching barrier layer and the thickness of supporting layer are identical.
Figure 18 is the structural representation provided in an embodiment of the present invention formed after second surface side forms etching barrier layer
Figure.Figure 18 is please referred to, if second surface is also burnishing surface, when first surface side forms oxide layer, second surface side
It will form oxide layer；In removal first surface side when remaining oxide layer, the oxide layer of second surface side can also be removed simultaneously.
When again first surface side formed supporting layer 201 when, can simultaneously second surface side formed etching barrier layer 206.By reasonable
Control technological parameter, supporting layer 201 and etching barrier layer 206 that can be all the same with material and thickness.
Optionally, in step 30, after substrate layer forms reeded side formation supporting layer, further includes: remover
Etching barrier layer in part area and the first subregion.
Figure 19 is the knot after the etching barrier layer in removal devices area provided in an embodiment of the present invention and the first subregion
Structure schematic diagram.Optionally, Figure 19 is please referred to, the etching barrier layer in removal devices area 301 and the first subregion 312 is passed through
After 206, only retaining etching barrier layer 206 in the second subregion 322 can using the etching barrier layer 206 of this some residual
Using the exposure mask as the substrate layer 204 in etching removal devices area 301 and the first subregion 312.By being formed such as Figure 19 institute
The structure shown, without be specially arranged again mask can substrate layer 204 in removal devices area 301 and the first subregion 312, can
To simplify preparation process, cost of manufacture is saved.
Optionally, the substrate layer in removal devices area and the first subregion, comprising: with remaining etching barrier layer be to cover
Substrate layer in film, removal devices area and the first subregion.
Figure 20 is that the structure after the substrate layer in removal devices area provided in an embodiment of the present invention and the first subregion is shown
It is intended to.Optionally, Figure 20 is please referred to, it should be noted that after forming structure as shown in figure 20, supporter 203 is separate
The etching barrier layer 206 of the side of supporting layer 201 can collectively constitute the opposite bigger supporter of thickness with supporter 203；By
In the effect of supporter it is only for that side of the supporting layer 201 far from resonator body is avoided to contact with other objects, therefore, nothing
Special technique need to be used, it can be to the remaining etching barrier layer 206 of 201 side of supporting layer separate in the second subregion 322
It is removed.
Figure 21 is the flow chart of the preparation method of resonator body provided in an embodiment of the present invention.Optionally, figure is please referred to
21, step 40, device region supporting layer far from the side of substrate layer, form resonator body, comprising:
Step 41, the device region in side of the supporting layer far from substrate layer form the first metal layer.
Step 42 forms piezoelectric material layer far from the side of supporting layer in the first metal layer.
Step 43 forms second metal layer far from the side of the first metal layer in piezoelectric material layer.
Figure 22 is the structural schematic diagram of another thin film bulk acoustic wave resonator provided in an embodiment of the present invention.Specifically, please join
Figure 22 is examined, after step 41, step 42 and step 43, thin film bulk acoustic wave resonator as described in Figure 22 can be formed.It needs
It is noted that remaining etching barrier layer can also be removed on the basis of thin film bulk acoustic wave resonator shown in Figure 22
206, to obtain thin film bulk acoustic wave resonator shown in Fig. 4.Alternatively, if being prepared with the substrate layer that only first surface is burnishing surface
Thin film bulk acoustic wave resonator, also available thin film bulk acoustic wave resonator as shown in Figure 4.In addition, forming the first metal layer
212 and when second metal layer 222, it can also include photoetching, cleaning, and form pad, electrical interconnection line etc..
Optionally, step 30, form reeded side in substrate layer and form supporting layer, comprising: use low pressure chemical gas
Phase sedimentation forms reeded side in substrate layer and forms supporting layer.It should be understood that Low Pressure Chemical Vapor Deposition is only one
The optional deposition method of kind, in fact, supporting layer can also be formed using modes such as physical vapour deposition (PVD) or magnetron sputterings,
The present embodiment is not specifically limited this.
Note that the above is only a better embodiment of the present invention and the applied technical principle.It will be appreciated by those skilled in the art that
The invention is not limited to the specific embodiments described herein, be able to carry out for a person skilled in the art it is various it is apparent variation,
It readjusts and substitutes without departing from protection scope of the present invention.Therefore, although being carried out by above embodiments to the present invention
It is described in further detail, but the present invention is not limited to the above embodiments only, without departing from the inventive concept, also
It may include more other equivalent embodiments, and the scope of the invention is determined by the scope of the appended claims.
Claims (18)
1. a kind of thin film bulk acoustic wave resonator characterized by comprising supporting layer, resonator body and supporter；
The thin film bulk acoustic wave resonator includes device region and the non-device area around the device region, the resonator body position
In on the supporting layer in the device region；
The supporting layer in the non-device area includes the bending structure of multiple strips, and the bending structure is to away from described humorous
The side bending of vibration device ontology；
The non-device area includes the first subregion and the second subregion around first subregion, the supporter setting
Deviate from the side of the resonator body in the supporting layer in second subregion；
Wherein, the angle between the extending direction of the bending structure and the radial direction of the supporting layer is not zero, and is located at
The mutual no overlap of the bending structure of described resonator body the same side.
2. thin film bulk acoustic wave resonator according to claim 1, which is characterized in that the material of the supporting layer is silicon nitride
Or silica；The material of the supporter is monocrystalline silicon.
3. thin film bulk acoustic wave resonator according to claim 1, which is characterized in that the thickness of the supporting layer is greater than or waits
In 0.1 μm, and it is less than or equal to 3.0 μm.
4. thin film bulk acoustic wave resonator according to claim 1, which is characterized in that the resonator body includes successively layer
The first metal layer, piezoelectric material layer and the second metal layer being laminated on the supporting layer.
5. thin film bulk acoustic wave resonator according to claim 1, which is characterized in that any side on the supporting layer edge
Distance along point to the supporting layer geometric center is first distance；Line segment along the formation of the edge point and geometric center prolongs
Direction is stretched, the distance at edge of the edge point to the device region is second distance；
The value range of the second distance and the ratio of the first distance is greater than or equal to 0.3, and is less than or equal to 0.5.
6. thin film bulk acoustic wave resonator according to claim 1, which is characterized in that along prolonging perpendicular to the bending structure
Direction is stretched, the section of the bending structure is " V " type or U-typed.
7. thin film bulk acoustic wave resonator according to claim 1, which is characterized in that the value of the width of the bending structure
Less than or equal to 15 μm, the value of the bending distance of the bending structure is less than or equal to 5 μm.
8. a kind of preparation method of thin film bulk acoustic wave resonator characterized by comprising
Substrate layer is provided；Wherein, the substrate layer include device region and around the device region setting non-device area；
The side of the substrate layer in the non-device area forms multiple grooves；Wherein, the extending direction of the groove with
Angle between the radial direction of the substrate layer is not 0, and the groove for being located at described device region the same side is mutual
No overlap；
Supporting layer is formed in the side that the substrate layer is formed with the groove；Wherein, the supporting layer includes multiple strips
Bending structure, the bending structure and the groove correspond, and the extending direction of the bending structure prolongs with the groove
It stretches that direction is identical, and is bent to the side away from the resonator body；
The supporting layer in the device region forms resonator body far from the side of the substrate layer；
The non-device area includes the first subregion and the second subregion around first subregion setting, removes the device
The substrate layer in part area and first subregion.
9. the preparation method of thin film bulk acoustic wave resonator according to claim 8, which is characterized in that the material of the substrate layer
Material is monocrystalline silicon, and the surface that the substrate layer is used to form the groove is first surface, and the first surface is burnishing surface.
10. the preparation method of thin film bulk acoustic wave resonator according to claim 8, which is characterized in that the substrate layer
Material is monocrystalline silicon, the substrate layer be used to form the groove surface be first surface, the first surface and with institute
The opposite second surface for stating first surface is burnishing surface.
11. the preparation method of thin film bulk acoustic wave resonator according to claim 8 or claim 9, which is characterized in that described described
The side of the substrate layer in non-device area forms multiple grooves, comprising:
Oxidation processes are carried out to the burnishing surface of the substrate layer, so that burnishing surface side described in the substrate layer forms oxygen
Change layer；
The oxide layer of the first surface side is patterned, to form multiple strip through-holes；
Using the oxide layer after graphical as exposure mask, the substrate layer is etched, it is multiple described to be formed on the substrate layer
Groove；
Remove the remaining oxide layer.
12. the preparation method of thin film bulk acoustic wave resonator according to claim 11, which is characterized in that described with graphical
The oxide layer afterwards is exposure mask, the substrate layer is etched, to form multiple grooves on the substrate layer, comprising:
Using the oxide layer after graphical as exposure mask, the substrate layer is etched using gas etching method.
13. the preparation method of thin film bulk acoustic wave resonator according to claim 11, which is characterized in that the oxide layer
Thickness is greater than or equal to 0.2 μm, and is less than or equal to 0.5 μm.
14. the preparation method of thin film bulk acoustic wave resonator according to claim 8, which is characterized in that in the substrate layer
While being formed with the side formation supporting layer of the groove, further includes:
Deviate from the side of the supporting layer in the substrate layer, forms etching barrier layer；Wherein, the material of the etching barrier layer
Identical as the material of the supporting layer, the thickness of the etching barrier layer is identical as the thickness of the supporting layer.
15. the preparation method of thin film bulk acoustic wave resonator according to claim 14, which is characterized in that in the substrate layer
The side for being formed with the groove is formed after supporting layer, further includes:
Remove the etching barrier layer in the device region and first subregion.
16. the preparation method of thin film bulk acoustic wave resonator according to claim 15, which is characterized in that remove the device
The substrate layer in area and first subregion, comprising:
Using the remaining etching barrier layer as exposure mask, the substrate in the device region and first subregion is removed
Layer.
17. the preparation method of thin film bulk acoustic wave resonator according to claim 8, which is characterized in that described in the device
The supporting layer in part area forms resonator body far from the side of the substrate layer, comprising:
Device region in side of the supporting layer far from the substrate layer forms the first metal layer；
Piezoelectric material layer is formed far from the side of the supporting layer in the first metal layer；
Second metal layer is formed far from the side of the first metal layer in the piezoelectric material layer.
18. the preparation method of thin film bulk acoustic wave resonator according to claim 8, which is characterized in that use low pressure chemical
Vapour deposition process forms the supporting layer in the side that the substrate layer is formed with the groove.
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| CN111313858A (en) * | 2019-11-29 | 2020-06-19 | 天津大学 | Bulk acoustic wave resonator, filter, and electronic device |
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