CN1098552C - Semiconductor laser with single mode vertical chamber surface emission - Google Patents
Semiconductor laser with single mode vertical chamber surface emission Download PDFInfo
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- CN1098552C CN1098552C CN 98103136 CN98103136A CN1098552C CN 1098552 C CN1098552 C CN 1098552C CN 98103136 CN98103136 CN 98103136 CN 98103136 A CN98103136 A CN 98103136A CN 1098552 C CN1098552 C CN 1098552C
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- bragg reflector
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000005260 corrosion Methods 0.000 claims description 16
- 230000007797 corrosion Effects 0.000 claims description 16
- 230000003287 optical effect Effects 0.000 claims description 11
- 230000003628 erosive effect Effects 0.000 abstract description 3
- 238000002310 reflectometry Methods 0.000 abstract description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 241000931526 Acer campestre Species 0.000 description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 108090000723 Insulin-Like Growth Factor I Proteins 0.000 description 1
- 102000013275 Somatomedins Human genes 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
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- 239000002096 quantum dot Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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Abstract
本发明公开了一种单模垂直腔面发射半导体激光器的器件结构，其结构特征是在激光器的上部布拉格反射器的顶层进行区域选择腐蚀形成一柱形结构，并保证基横模的光强主要限制在柱形中心未腐蚀的区域，而高阶横模则有较大比例的光强分布在顶层部分或全部腐蚀掉的较低反射率区域，达到抑制高阶横模的目的。部分区域腐蚀掉顶层对横向波导的影响几乎可忽略不计，因此横向光场分布可独立控制，有利于选择最佳的控制条件。
The invention discloses a device structure of a single-mode vertical-cavity surface-emitting semiconductor laser, which is characterized in that the top layer of the upper Bragg reflector of the laser is selectively etched to form a columnar structure, and the light intensity of the fundamental transverse mode is guaranteed to be mainly It is limited to the uncorroded area in the center of the column, while the high-order transverse mode has a larger proportion of light intensity distributed in the lower reflectivity area where the top layer is partially or completely etched, so as to achieve the purpose of suppressing the high-order transverse mode. Erosion of the top layer in some areas has almost negligible influence on the transverse waveguide, so the transverse light field distribution can be independently controlled, which is conducive to the selection of the best control conditions.
Description
The present invention relates to semiconductor laser (or semiconductor device), more specifically, the present invention relates to vertical-cavity-face emitting semiconductor laser.
The resonant cavity of vertically being made up of active area and limiting layer of vertical-cavity-face emitting semiconductor laser is clipped in that upper and lower high reflectance reflector constituted, the reflectivity of its reflector is generally more than 99%, and restriction of horizontal electric current and waveguiding structure generally have the waveguide of cylindricality refractive index, proton bombardment gain waveguide, and the refractive index waveguide of oxide restriction etc.Active area can be GaAs, InGaAs, and InGaAsP, AlGaInP, semiconductor bulk materials such as GaN, quantum well, quantum wire or quantum dot, high reflectance reflector be multi-lager semiconductor or medium Bragg reflector normally.Because its resonant cavity is long extremely short, vertical-cavity-face emitting semiconductor laser is easy to realize single longitudinal mode operation, but difficulty is just compared in transverse mode control.In many practical applications, all require vertical cavity surface emitting laser to have the fundamental transverse mode work of stable fundamental transverse mode operating characteristic, particularly high-output power.Such vertical cavity surface emitting laser can satisfy HIGH-DENSITY OPTICAL STORAGE and reading, free space optical interconnection, and many needs such as data high-speed transmission in the monomode fiber.Vertical-cavity-face emitting semiconductor laser is constantly making progress aspect raising fundamental transverse mode job stability and the single mode power output.The U.S. Pat Patent No:5539759 that authorizes in July, 1996 " single-mode laser with passive anti-waveguide mode selector " (" Single mode laser with a pasive antiguideregion mode selector ") has proposed a kind of anti-waveguiding structure that forms by the secondary epitaxy growth.In this structure, be the high covering in refractive index ratio center around the laser cavity, thereby form anti-waveguide, cause the high-order transverse mode that bigger leakage loss is arranged, help single fundamental transverse mode work.This anti-waveguiding structure model selection is fine, yet the secondary epitaxy specification requirement is very high, and technology is more complicated also.Recently, at J.Appl.Phys., vol.83, no.7, pp.3769-3772,1998.4.1 article " effect that the reflection coefficient at oxide layer interface is selected transverse mode in the vertical cavity surface emitting laser of oxide layer restriction " (" Effect of reflectivity at the interface of oxide layer ontransverse mode control in oxide confined vertical-cavity surface-emitting lasers ") in, the inventor proposes in the vertical cavity surface emitting laser of AlAs oxide layer restriction by regulating thickness of oxide layer and position, make oxide layer form more weak transversal waveguides, the reflection coefficient of simultaneous oxidation layer and the reflection coefficient of Bragg reflector are anti-phase, also can realize transverse mode control.But it is very tight that this method requires the oxide layer Position Control, and getable gain for threshold value difference is not very big.
The objective of the invention is to propose a kind of simple in structure, easy to implement, and can effectively suppress the high-order transverse mode, can realize the vertical-cavity-face emitting semiconductor laser of unimodal far field work under than large out light hole footpath condition.
Core concept of the present invention is to carry out regional selective etching by the high index of refraction top layer to vertical-cavity-face emitting semiconductor laser middle and upper part Bragg reflector, with the transmission loss of control fundamental transverse mode and high-order transverse mode, and realizes single mode operation.By changing the thickness of top layer, can regulate the phasic difference of light between the reflection coefficient of the reflection coefficient of air interface and top other each layer of Bragg reflector, thus the total reflectance of change top Bragg reflector.Architectural feature of the present invention is that the top layer selective etching goes out a column construction, and the fundamental transverse mode light intensity major limitation that guarantees vertical cavity surface emitting laser is in uncorroded cylindricality central area, and the high-order transverse mode has the light distribution of larger proportion in eroding the zone of top layer.In corrosion region because the reflection coefficient of the reflection coefficient of air interface and other each layer of Bragg reflector is anti-phase, this regional reflection coefficient is significantly less than not corrosion region, so the average weighted mode reflection coefficient of fundamental transverse mode is greater than the average weighted mode reflection coefficient of high-rder mode.Al for the 20 cycle 980nm that on the GaAs substrate, grow
0.9Ga
0.1The reflection coefficient of As/GaAs distributed Bragg reflector can reach 0.999067, if and top layer quarter-wave GaAs is all eroded, then the reflection coefficient peak value of Bragg reflector has only 0.988633, and is also littler than the reflection coefficient 0.988882 of 13 cycle Bragg reflectors.And top layer corrosion only is equivalent to the refringence of 10-5 in the caused transversal waveguides of vertical-cavity-face emitting semiconductor laser, and very little to pattern lateral light field distribution influence, the lateral light field distribution can independently be controlled.If basic mode and First-Order Mode be limited in the center not corrosion region light intensity ratio be respectively 99% and 95%, the mode reflection coefficient of then average weighted fundamental transverse mode and First-Order Mode is respectively R
0=0.998963 and R
1=0.998545, the ratio of the transmission loss of First-Order Mode and basic mode is (1-R
1)/(1-R
0)=1.40 are if transmission loss requires basic mode to have 400cm like this
-1Active area gain, then First-Order Mode Duos 40% than basic mode, i.e. 160cm
-1
By the control of growth course, particularly during the somatomedin Bragg reflector, also might directly form a column construction at top layer.
Below in conjunction with drawings and Examples the present invention is further described,, is not drawn to scale each layer size among the figure because size differs too big.
Fig. 1 is the cross-sectional view of oxide layer restriction vertical cavity surface emitting laser;
Fig. 2 is for eroding away the section of the oxide layer restriction vertical cavity surface emitting laser of groove at top layer according to the present invention
Structural representation, and the radially light intensity distribution schematic diagram of the basic mode of laser and First-Order Mode;
Fig. 3 is at the top view of vertical cavity surface emitting laser top layer selective etching figure according to the present invention;
Fig. 4 is the cross-sectional view of first embodiment of the invention InGaAs oxide layer restriction vertical cavity surface emitting laser;
Fig. 5 is the cross-sectional view of second embodiment of the invention GaAs proton bombardment vertical cavity surface emitting laser;
Fig. 6 is for making the step of single mode proton bombardment vertical cavity surface emitting laser according to the present invention.
Fig. 1 is the cross-sectional view of oxide layer restriction vertical cavity surface emitting laser 40, and device architecture is a growth bottom Bragg reflector 16 on substrate 18, lower limit layer 14, active area 12, upper limiting layer 10, and top Bragg reflector 6.The AlGaAs layer that one deck Al content each layer far above other arranged in top Bragg reflector 6, after the material growth, etched mesa or hole, a series of garden arrive the AlGaAs layer of high Al content, AlGaAs layer through the high Al content of high warm and humid nitrogen oxidation forms oxide 8, oxide 8 is realized the electric current restriction of laser and is formed the lateral light waveguide, laser is from light hole 1 output, and electric current injects through electrode 4 and electrode 20.
Fig. 2 is the cross-sectional view that erodes away the oxide layer restriction vertical cavity surface emitting laser 100 of groove according to the present invention at top layer, and the radially light distribution of the basic mode 34 of laser and First-Order Mode 36 signal.Device is a growth bottom Bragg reflector 16 on substrate 18, lower limit layer 14, active area 12, upper limiting layer 10, and top Bragg reflector 6.One AlAs layer is arranged in the top Bragg reflector 6, after the material growth, etched mesa or hole, a series of garden arrive the AlAs layer, form oxide layer 8 through high warm and humid nitrogen oxidation AlAs layer, oxide layer 8 realizes the electric current restriction of laser and forms the lateral light waveguide, and other each layer is subjected to wet nitrogen oxidation affects very little.Width is a groove 3 more than the 500nm less than top layer thickness to erode away the degree of depth at the top layer 5 of top Bragg reflector 6 around unthreaded hole 1, and the center not electric current that forms of aperture and the oxidation of corrosion area 2 and the size in waveguide aperture equates substantially.Specifically size can determine according to the radially light distribution of basic mode 34 and First-Order Mode 36 and the transmission loss difference of desired basic mode and high-rder mode, but requires the transmission loss difference of basic mode and high-rder mode big more, and the gain for threshold value of basic mode is also high more.Electric current injects through electrode 4 and electrode 20.
Fig. 3 for according to the present invention on vertical cavity surface emitting laser selective etching go out the top view of several figures, the zone of center 2 for not have to corrode, shadow region 3 is a corrosion region.The top layer 4 that Fig. 3 A and Fig. 3 B have kept around the shadow region is beneficial to do electrode, and Fig. 3 C and Fig. 3 D have then only kept not corrosion of center, and this is suitable for the top Bragg reflector is that dielectric material or electrode are not made in top layer.Corrosion region can also can erode several semiconductor or dielectric layers to Bragg reflector, as long as corrosion stops at low-index layer or high refractive index layer only keeps sub-fraction only to the top layer corrosion.But erode several to Bragg reflector semiconductor or dielectric layer may to form stronger transversal waveguides influential to optical field distribution.
Fig. 4 is the cross-sectional view of first embodiment of the invention InGaAs oxide layer restriction vertical cavity surface emitting laser 200, and device is 16.5 to the 30.5 cycle n type Al that grow successively on n type GaAs substrate 18
0.9Ga
0.1As/GaAs Bragg reflector 16, AlGaAs lower limit layer 14, InGaAs quantum well active area 12, AlGaAs upper limiting layer 10, bound preparative layer 10 and 14 and the optical thickness sum of quantum well active area 12 be an optical maser wavelength or a plurality of optical maser wavelength, top 16 to 30 period p type Al
0.9Ga
0.1As/GaAs Bragg reflector 6, and in Bragg reflector 6, insert the AlAs of one deck 30nm.After the material growth, etched mesa arrives the AlAs layer, form oxide layer 8 through high warm and humid nitrogen oxidation AlAs layer, oxide layer 8 realizes the electric current restriction of laser and forms the lateral light waveguide, erode away the degree of depth 10 to 70nm and width is 500 to 10000nm groove 3 at the top layer GaAs 5 of top Bragg reflector 6 around unthreaded hole 1 then, the center not aperture of corrosion area 2 equates substantially with the electric current of oxidation formation and the size in waveguide aperture, guarantee that the fundamental transverse mode light intensity is substantially limited in center 2, and high-rder mode there is larger proportion in corrosion region 3.Electric current injects through electrode 4 and electrode 20.
Fig. 5 is the cross-sectional view of second embodiment of the invention GaAs proton bombardment vertical cavity surface emitting laser 300, and device is for growing 16.5 to 30.5 cycle n type AlAs/Al successively on substrate 18
0.1Ga
0.9As Bragg reflector 16, AlGaAs lower limit layer 14, GaAs quantum well active area 12, AlGaAs upper limiting layer 10, bound preparative layer 10 and 14 and the optical thickness sum of quantum well active area 12 be an optical maser wavelength or a plurality of optical maser wavelength, top 16 to 30 period p type AlAs/Al
0.1Ga
0.9As Bragg reflector 6, proton bombardment district 7 realizes the electric current restriction to laser, erode away the degree of depth 10 to 59nm and width is 500 to 10000nm groove 3 at the top layer GaAs 5 of top Bragg reflector 6 around unthreaded hole 1, formed gain waveguide decision is injected according to electric current in the center not aperture of corrosion area 2, the injection current aperture that its big I forms less than proton bombardment, electric current injects through electrode 4 and electrode 20.
Fig. 6 is for making the step of single mode proton bombardment vertical cavity surface emitting laser: step 1 comprises Bragg reflector 16 for adopting molecular beam epitaxy or metallo-organic compound vapour phase epitaxy to grow on substrate 18, the resonant cavity 11 that bound preparative layer and quantum well active area are formed, the epitaxial wafer of top Bragg reflector 6; Step 2 forms high resistance area 7 for epitaxial wafer is carried out proton bombardment in top Bragg reflector 6, the proton bombardment barrier layer can be photoresist or metal etc., and the place forms current channel on the barrier layer; Step 3 erodes away groove 3 for the size according to current channel at top layer, and groove 3 degree of depth and width and center 2 is big or small disproportionate among the figure; Step 4 is for making electrode 4 and 20.
Claims (3)
1. fundamental transverse mode vertical-cavity-face emitting semiconductor laser, it comprises the bottom Bragg reflector, the resonant cavity and the top Bragg reflector that contain active area, it is characterized in that: the top layer of top Bragg reflector erodes away garden shape, square or polygonal annular section around in fundamental transverse mode optical field distribution center, in annular section corrosion depth can be identical with top layer thickness or corrosion depth than little 10 to 50 nanometers of top layer thickness; Or the top layer of top Bragg reflector high index of refraction is only selected growth in fundamental transverse mode optical field distribution center.
2. surface-emitting laser according to claim 1 is characterized in that 3 layers of corrosion region internal upper part Bragg reflectors or 5 layers of medium or semiconductor are corroded.
3. surface-emitting laser according to claim 1 is characterized in that top Bragg reflector top layer all erodes except that the center.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 98103136 CN1098552C (en) | 1998-07-16 | 1998-07-16 | Semiconductor laser with single mode vertical chamber surface emission |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 98103136 CN1098552C (en) | 1998-07-16 | 1998-07-16 | Semiconductor laser with single mode vertical chamber surface emission |
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| CN1242633A CN1242633A (en) | 2000-01-26 |
| CN1098552C true CN1098552C (en) | 2003-01-08 |
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| CN 98103136 Expired - Fee Related CN1098552C (en) | 1998-07-16 | 1998-07-16 | Semiconductor laser with single mode vertical chamber surface emission |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5434201B2 (en) * | 2009-03-23 | 2014-03-05 | ソニー株式会社 | Semiconductor laser |
| CN104836116B (en) * | 2015-04-09 | 2018-01-05 | 中国科学技术大学先进技术研究院 | A kind of fundamental transverse mode microtrabeculae shape laser based on polymer |
| CN106848835B (en) * | 2016-12-22 | 2020-04-28 | 华中科技大学 | A DFB Laser Based on Surface Grating |
| CN112290379B (en) * | 2020-12-29 | 2021-04-30 | 江西铭德半导体科技有限公司 | VCSEL chip and manufacturing method thereof |
| CN116632655B (en) * | 2023-07-21 | 2023-10-20 | 中国科学院长春光学精密机械与物理研究所 | Vertical cavity surface emitting laser with mode filtering function and preparation method thereof |
| CN118040474B (en) * | 2024-04-07 | 2024-06-21 | 苏州长光华芯光电技术股份有限公司 | Multi-junction vertical cavity surface emitting semiconductor light emitting structure and preparation method thereof |
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