CN109841642A - A kind of X-ray flat panel detector of X-ray-preventing interference - Google Patents
A kind of X-ray flat panel detector of X-ray-preventing interference Download PDFInfo
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- CN109841642A CN109841642A CN201910240989.6A CN201910240989A CN109841642A CN 109841642 A CN109841642 A CN 109841642A CN 201910240989 A CN201910240989 A CN 201910240989A CN 109841642 A CN109841642 A CN 109841642A
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- 239000010410 layer Substances 0.000 claims description 42
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- 230000009286 beneficial effect Effects 0.000 abstract description 2
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- 238000004544 sputter deposition Methods 0.000 description 4
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- 239000000306 component Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
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- 229910016570 AlCu Inorganic materials 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 2
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- Solid State Image Pick-Up Elements (AREA)
- Measurement Of Radiation (AREA)
Abstract
本发明公开了一种防X射线干扰的X射线平板探测器，包括像素矩阵以及外围电路。像素矩阵由薄膜光电二极管和薄膜晶体管开关器件组成，其中薄膜晶体管开关器件上方设置有用于屏蔽X射线的防护层，防护层优选钨金属薄膜。本发明的有益效果：本发明将电子器件优化为带有防护层的器件，有效地降低了高能X射线对器件的影响，减少了器件的噪声干扰，并且提高了器件的使用寿命。
The invention discloses an X-ray flat panel detector for preventing X-ray interference, comprising a pixel matrix and a peripheral circuit. The pixel matrix is composed of a thin film photodiode and a thin film transistor switching device, wherein a protective layer for shielding X-rays is provided above the thin film transistor switching device, and the protective layer is preferably a tungsten metal thin film. Beneficial effects of the present invention: The present invention optimizes the electronic device as a device with a protective layer, effectively reduces the influence of high-energy X-rays on the device, reduces the noise interference of the device, and increases the service life of the device.
Description
Technical field
The present invention relates to a kind of X-ray flat panel detectors of X-ray-preventing interference, detect more particularly to the X-ray plate
The X-ray protection film of thin film transistor (TFT) (TFT) device in device, such as material, position and the thickness of the protection film.
Background technique
Since 19 beginning of the century roentgens have found that X-ray starts, X-ray is just widely used in the mammograms taken of human body.X is penetrated
Line camera work is the diagnosis assisting system generally used in medical consultations, and very important effect is played in modern medicine.
It throws the homogeneous X-ray a part shone on human body to be absorbed by the body and scatter, another part passes through human body and propagates along former direction.By
In human body it is various tissue and organ density, in terms of have differences, it is also each to the uptake for being projected on X-ray thereon
Difference, therefore image information is passed into detector in the form of different X-ray intensities.
X-ray is a kind of ray of high energy, and X-ray tube, magnetron and klystron etc. are the generation devices of x-ray source,
Accelerated by the electronics in electric current, high velocity bombardment heavy metal target simultaneously radiates X-ray.The high energy particle of X-ray has substance
There is very strong penetration, and the damaging action of unrepairable may be caused to detection device, it is therefore desirable to do the anti-of X-ray
Shield.In existing electronic device, X-ray has a great impact to electronic equipment, and this greatly reduces electronic components
Service life.
X-ray flat panel detector is a kind of electron detection instrument of precision, especially has been carried out digitized X now and penetrates
Line flat panel detector, wherein including a large amount of thin film photodiode and Weimer triode device.It is visited in an X-ray plate
It surveys in device, thin film transistor (TFT) quantity is millions of or even up to ten million.These electronic devices are made of electronic semi-conductor's film
, it is easy to it is influenced by X-ray, greatly reduces the service life of X-ray flat panel detector.
Summary of the invention
Influence the purpose of the present invention is to solve sigmatron to the TFT device of X-ray flat panel detector is reduced
Signal noise improves the service life of TFT device in X-ray flat panel detector.
To achieve the goals above, TFT device in X-ray flat panel detector is added the protection of one layer of X-ray-preventing by the present invention
Layer film is reduced influence of the sigmatron to low current signal by suitable protective layer, while improving making for TFT device
Use the service life.Specific technical solution is as follows:
A kind of X-ray flat panel detector of X-ray-preventing interference, including picture element matrix and peripheral circuit.Picture element matrix by
Thin film photodiode and film transistor switch device composition, wherein being provided on film transistor switch device for shielding
Cover the metal protection layer of X-ray.
Further, peripheral circuit includes bias voltage conducting wire, thin film transistor (TFT) driving conducting wire, signal-obtaining conducting wire, drives
Dynamic chip and signal-obtaining chip.
Further, protective layer includes thin film or the combination including multilayer difference film.
Further, the thickness range of protective layer is 0.1 micron to 10 microns.
Further, protective layer includes heavy metal film.
Further, protective layer includes metal W film.
Further, protective layer is the film layer obtained by physical deposition or chemical deposition.
Further, film transistor switch device is passivated layer protection, and protective layer is located on passivation layer.
Further, X-ray flat panel detector further includes scintillation crystal film layer, and protective layer is arranged in scintillation crystal film
On layer, alternatively, protective layer is arranged under scintillation crystal film layer.
Further, X-ray flat panel detector includes static Chest X-rays X-ray flat panel detector, the detection of breast X-ray plate
Device, dynamic X-ray flat panel detector, cmos device X-ray flat panel detector, safety check flat panel detector and industrial flaw detection are used
One of X-ray flat panel detector.
Beneficial effects of the present invention: the electronic device in X-ray flat panel detector is optimized for protective layer by the present invention
Device, significantly reduce influence of the sigmatron to these devices, reduce the noise jamming of device, and improve device
The service life of part.
Detailed description of the invention
Fig. 1 is the signal of a sensor unit in a preferred embodiment of the present invention, in X-ray flat panel detector
Figure；
Fig. 2 is the schematic diagram of the section structure along dotted line in Fig. 1；
Fig. 3 is the signal of the X-ray protection film in a preferred embodiment of the present invention, in a part of sensor matrices
Figure；
Fig. 4 is the circuit diagram of X-ray flat panel detector in a preferred embodiment of the present invention.
The reference numerals are as follows in above each figure:
1-TFT device source electrode
The channel thin-film of 2-TFT device amorphous silicon (or other semiconductor materials)
3- through-hole
4-p-i-n photodiode device
5-X radiation protection film
6- electrical signal data conducting wire
7-TFT gate-drive conducting wire
8- glass substrate
9- amorphous SiNxDielectric layer
10-AlCu metal source-drain electrode
11- silicon nitride passivation
12- metal gate film and conducting wire
13- tungsten
14- amorphous silicon membrane
15- sensor p-type amorphous silicon membrane
16- intrinsic amorphous silicon film
17-n type amorphous silicon membrane
18- transparent conductive electrode
19- photodiode
20-X radiation protection film
21-TFT driving chip
22- signal code reads chip
Specific embodiment
Most crucial component is photoelectric sensing matrix in digital X-ray flat panel detector.Direct-type X-ray flat panel detector
Include the films such as amorphous selenium (Se), lead oxide and thin film transistor (TFT) (TFT) matrix backplane.Indirect-type X-ray flat panel detector packet
Matrix backplane containing cesium iodide (CsI) scintillation crystal film, photodiode and thin film transistor (TFT) (TFT) switching device composition.
The either X-ray flat panel detector of Direct-type or indirect-type, wherein TFT switch device is all to X-ray flat panel detector
Stability and the very important component of service life.
X-ray flat panel detector disclosed in this patent is the indirect-type X-ray sensing technology based on photodiode array
And design.The working principle of indirect-type X-ray flat panel detector is as follows: after X-ray transparent testee, a part irradiation
Visible light signal is generated to scintillation crystal, and is transmitted to photodiode and is converted into electric signal, electric signal passes through TFT switch device
Outflow, the X-ray for being during which irradiated to TFT switch device will have an impact the performance of these devices.
In order to reduce influence of the X-ray to X-ray flat panel detector, especially to the TFT switch device in sensing matrix
Service life and detection performance influence, and reach optimization flat panel detector performance, increase X-ray flat panel detector make
With the purpose in service life, this patent designs in X-ray flat panel detector joined one layer of X-ray protection layer, specifically on TFT
Increase the X-ray protection layer of one layer of heavy metal material.
It can be explained according to X-ray protection, the sensor containing X-ray protection layer in this patent can be effectively reduced
Influence of the X-ray to film transistor switch device performance effectively increases the stability of X-ray flat panel detector and makes
Use the service life.In addition, in order to reduce interference of the thin film transistor switch by X-ray, passivation layer can effectively improve detection signal
Stability, improve the image resolution ratio and resolution of flat panel detector.
The implementation of this patent is described in detail with reference to the accompanying drawing.It should be noted that being mentioned in this specific embodiment
The diagram of confession only illustrates a kind of effective implementation or application of this patent, so each in a schematic manner
The case where when ratio of the size, form, quantity and the display that show in diagram is not referring to actual implementation, and its practical feelings
Condition may be more complicated.The present embodiment is implemented under premised on the technical solution of this patent, gives detailed implementation
Mode and specific operating process, but the protection scope of this patent is not limited to the following embodiments.
It is the backboard containing TFT switch matrix with the core component in X-ray protection function flat panel detector.Backboard is
On a glass substrate by the manufacture of TFT technique.Healthy and free from worry brand or other brands TFT special glass pass through stringent cleaning process
After pretreatment, polysilicon TFT device can be prepared on it, be as shown in Figure 1 a biography in X-ray flat panel detector
The schematic diagram of sensor cell.In Fig. 1, a pixel sensor cell include TFT device source electrode 1, TFT device amorphous silicon (or
Person other semiconductor materials) channel thin-film 2, through-hole 3, p-i-n photodiode device 4, X-ray protection film 5, electric signal
Data conductor 6 and TFT gate-drive conducting wire 7.In order to become apparent from expression, the X-ray protection film 5 in Fig. 1 is with gray display.
The X-ray protection film 5 is mainly tungsten, and preparation process can sputter skill for physical vapour deposition (PVD) (PVD)
Art deposits one layer of metal W film by sputtering technology on silicon nitride passivation film, then lead to after the preparation of TFT device
It crosses photoetching and lithographic technique to be patterned metal W film, metal W film is graphically made to block TFT switch device
Part, and the part of photoelectric sensor is leaked out simultaneously.Its material can attach most importance to metallic film material, be also possible to other suitable materials
Material.The X-ray protection film 5 is normally at the top of TFT switch device, position can protective effect passivation layer it
On, it can also be on scintillation crystal film.Protection layer film described in this patent can be thin film, be also possible to multilayer
The combination of different films, different films can also be different protective materials.
Fig. 2 is the sectional view in Fig. 1 along lower dotted line.The basic preparation step of X-ray flat panel detector includes: in glass
Pass through PVD sputtering technology deposited metal gate pole film and conducting wire 12 on substrate 8；Chemical vapor deposition (CVD) deposits one layer of amorphous
SiNxDielectric layer 9；One layer of amorphous silicon membrane 14 of CVD deposition；One layer of AlCu metal source-drain electrode 10 of sputtering sedimentation；And each layer is thin
The photoetching of film and patterning process.In CVD technique (or other feasible Polysilicon film deposition works of amorphous silicon membrane 14
Skill) in, it is apparent that changing from the data such as X-ray powder diffraction (XRD), fourier transform infrared spectroscopy (FTIR)
The thinner ratio of hydrogen (H) can optimize the quality of institute's deposited polycrystalline silicon thin film, obtain the structure for being particularly suited for TFT device.
After multi-crystal TFT is completed in preparation, steamed by plasma enhanced chemical vapor deposition method (PECVD) and electron beam
Hair technology prepares X ray sensor, such as sensor p-type amorphous silicon membrane 15, intrinsic amorphous silicon film 16, the N-shaped amorphous in Fig. 2
Silicon thin film 17 and the transparent conductive electrode 18 of sputtering technology preparation.The X ray sensor and multi-crystal TFT of preparation constitute X
One pixel unit of ray flat panel detector is the silicon nitride passivation 11 to shield on this pixel unit,
It is also to be prepared with PECVD.Particularly, it is increased in this patent using the tungsten 13 of PVD deposition as X-ray protection film.
The lower section of tungsten 13 is the TFT switch device of sensor.The number of plies of X-ray protection layer can be one layer, be also possible to multilayer,
And it can be formed by different materials are alternately laminated.The total thickness of X-ray protection layer is 0.1 micron to 10 microns.
The sensor matrices that X-ray flat panel detector is made of many X ray sensor pixels, and by conducting wire by he
Connect, be illustrated in figure 3 the schematic diagram of this matrix.Number of sensors is not limited to shown in Fig. 3, and 19 be each sensing
Photodiode part in unit, the 20 X-ray protection films being connected together.In Fig. 4, gate electrode drive signals are connected
Chip 22 is read in the electric signal connection signal electric current of TFT driving chip 21, reading, and then is constituted with X-ray protection function
The X-ray flat panel detector of energy.
In the above-described embodiments, X-ray protection layer is contained in Semiconductor X-Ray flat panel detector, which is sensing
The inside of device.In a further embodiment, X-ray protection layer can also can prevent or subtract in the outside of sensor, and
Influence of the weak X-ray to the film transistor switch device performance in flat panel detector.
Protection layer film was both desirably integrated into X-ray flat panel detector, while being also applied for discrete either small-sized
X-ray detector.X-ray protection layer film can be applied to: static Chest X-rays X-ray flat panel detector, breast X-ray plate
Detector, dynamic X-ray flat panel detector, cmos device X-ray flat panel detector, safety check flat panel detector and industry are visited
In the equipment such as wound X-ray flat panel detector.
Through different schemes, using the X-ray flat panel detector of this patent X-ray-preventing, it is possible to reduce high-energy ray radiation
10% to 30%, it has the ability that device lifetime 0.5% or more will be improved.Using the X-ray flat panel detector of X-ray-preventing, by each
The optimization design of grade protective layer, the radiation that high-energy ray can be effectively reduced, reduce electronics device at the service life for improving electronic device
The power consumption of part and effectively improve electronic device transformation efficiency.Moreover, this patent will further improve electronic device and make
With the service life, the economic benefit of Related product is improved.
The preferred embodiment of the present invention has been described in detail above.It should be appreciated that those skilled in the art without
It needs creative work according to the present invention can conceive and makes many modifications and variations.Therefore, all technologies in the art
Personnel are available by logical analysis, reasoning, or a limited experiment on the basis of existing technology under this invention's idea
Technical solution, all should be within the scope of protection determined by the claims.
Claims (10)
1. a kind of X-ray flat panel detector of X-ray-preventing interference, including picture element matrix and peripheral circuit, the picture element matrix
It is made of thin film photodiode and film transistor switch device, which is characterized in that on the film transistor switch device
Side is provided with the protective layer for shielding X-ray.
2. a kind of X-ray flat panel detector of X-ray-preventing interference according to claim 1, which is characterized in that the periphery
Circuit includes bias voltage conducting wire, thin film transistor (TFT) driving conducting wire, signal-obtaining conducting wire and driving chip and signal-obtaining core
Piece.
3. a kind of X-ray flat panel detector of X-ray-preventing interference according to claim 1, which is characterized in that the protection
Layer includes thin film, alternatively, including the combination of multilayer difference film.
4. a kind of X-ray flat panel detector of X-ray-preventing interference according to claim 1, which is characterized in that the protection
The thickness range of layer is 0.1 micron to 10 microns.
5. a kind of X-ray flat panel detector of X-ray-preventing interference according to claim 3, which is characterized in that the protection
Layer includes heavy metal film.
6. a kind of X-ray flat panel detector of X-ray-preventing interference according to claim 5, which is characterized in that the protection
Layer includes metal W film.
7. a kind of X-ray flat panel detector of X-ray-preventing interference according to claim 4, which is characterized in that the protection
Layer is the film layer obtained by physical deposition or chemical deposition.
8. a kind of X-ray flat panel detector of X-ray-preventing interference according to claim 1, which is characterized in that the film
Transistor switch device is passivated layer protection, and the protective layer is located above the passivation layer.
9. a kind of X-ray flat panel detector of X-ray-preventing interference according to claim 1, which is characterized in that the X is penetrated
Line flat panel detector further includes scintillation crystal film layer, and the protective layer is arranged on the scintillation crystal film layer, alternatively,
The protective layer is arranged under the scintillation crystal film layer.
10. the X-ray flat panel detector that a kind of X-ray-preventing according to claims 1 to 9 interferes, which is characterized in that described
X-ray flat panel detector includes static Chest X-rays X-ray flat panel detector, breast X-ray flat panel detector, dynamic X-ray plate
Detector, cmos device X-ray flat panel detector, safety check flat panel detector and industrial flaw detection X-ray flat panel detector
One of.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111081728A (en) * | 2019-12-25 | 2020-04-28 | 上海奕瑞光电子科技股份有限公司 | X-ray flat panel detector and preparation method thereof |
| CN114156293A (en) * | 2021-11-29 | 2022-03-08 | 京东方科技集团股份有限公司 | Flat panel detector and manufacturing method thereof, flat panel detection device and imaging system |
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