CN109830513A - A kind of array substrate and preparation method thereof and display panel - Google Patents
A kind of array substrate and preparation method thereof and display panel Download PDFInfo
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Abstract
The present invention relates to field of display technology more particularly to a kind of array substrate and preparation method thereof and display panels.To solve the problem of the coffee ring effect that pixel defining layer is occurred using trapezium structure in the related technology and the cathode layer tomography that use inverted trapezoidal structure occurs.A kind of array substrate, comprising: substrate, and pixel defining layer on substrate is formed, substrate is divided into multiple subpixel regions by pixel defining layer；Pixel defining layer includes that first to be cascading from top to bottom defines layer and second and define layer, second width for defining the lower surface of layer is greater than the width for the upper surface that first defines layer, forms the retraction structure for defining layer relative to second to define the two sides of layer in the width direction first.The embodiment of the present invention is used to make OLED display panel by inkjet printing technology.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of array substrate and preparation method thereof and display panels.
Background technique
Currently, using inkjet printing technology production OLED (Organic Light-Emitting Diode, organic electroluminescence hair
Optical diode) display panel and QLED (Quantum Dot Light Emitting Diodes, light emitting diode with quantum dots) be aobvious
Show that panel is the most effective approach realizing low cost and large area true color and showing.
Summary of the invention
It is a primary object of the present invention to provide a kind of array substrate and preparation method thereof and display panel, to solve
The coffee ring effect that pixel defining layer uses trapezium structure to occur in the related technology, and occurred using inverted trapezoidal structure
The problem of cathode layer tomography.
In order to achieve the above objectives, the present invention adopts the following technical scheme:
In a first aspect, the embodiment of the present invention provides a kind of array substrate, comprising: substrate, and formed over the substrate
Pixel defining layer, the substrate is divided into multiple subpixel regions by the pixel defining layer；The pixel defining layer includes
First to be cascading from top to bottom defines layer and second defines layer, and the width of the described second lower surface for defining layer is greater than
Described first defines the width of the upper surface of layer, is formed with defining the two sides of layer in the width direction described first relative to described
Second defines the retraction structure of layer.
Optionally, described first define layer with a thickness of 0.5-1.5 microns, described second define layer with a thickness of 0.5-
1.0 micron.
Optionally, the described second upper surface for defining layer is formed with hydrophobic film.
Optionally, the hydrophobic film is Fluorocarbon polymer film.
Optionally, described first layer is defined as silicon nitride film, described second defines layer as silicon oxide film.
Optionally, it is provided with light emitting functional layer in the subpixel regions, the thickness of the light emitting functional layer and described the
One difference for defining the thickness of layer is greater than or equal to 0 and is less than or equal to 100 nanometers.
Optionally, the array substrate further includes the anode layer being formed between the substrate and the pixel defining layer,
And it is formed in the cathode layer in the light emitting functional layer and pixel defining layer, wherein the anode layer includes being arranged each
Anode in the subpixel regions.
Optionally, the anode layer includes the Reflective metal electrodes layer being cascading from top to bottom and transparent electrode
Layer；The cathode layer includes the metal electrode layer being cascading from top to bottom and transparent electrode protecting layer.
Second aspect, the embodiment of the present invention provide a kind of display panel, including array substrate as described above.
The third aspect, the embodiment of the present invention provide a kind of preparation method of array substrate, comprising: form picture on a substrate
Element defines layer, and the substrate is divided into multiple subpixel regions by the pixel defining layer；The pixel defining layer includes under
Layer and second is defined to first to be above cascading and defines layer, and the described second width for defining the lower surface of layer is greater than described
First defines the width of the upper surface of layer, is formed with defining the two sides of layer in the width direction described first relative to described second
The retraction structure of layer is defined, the described second upper surface for defining layer is formed with hydrophobic film；Wherein, the described first quarter for defining layer
Erosion selection is than being greater than the described second etching selection ratio for defining layer, and described first defines layer and described second and define layer and pass through together
One time patterning processes are formed.
Optionally, further includes: define the exposed surface of layer to described second using fluorocarbon and carry out plasma
Body processing forms hydrophobic film to define the upper surface of layer described second.
The embodiment of the present invention provides a kind of array substrate and preparation method thereof and display panel, due to the pixel defining layer packet
It includes first to be cascading from top to bottom and defines layer and second and define layer, and the width of the second lower surface for defining layer is greater than
First defines the width of the upper surface of layer, is formed with defining the two sides of layer in the width direction described first relative to described second
The retraction structure of layer is defined, therefore, when ink-jet forms light emitting functional layer, due to being retracted the presence of structure, ink droplet is made in capillary
Under can more uniformly drawout come, so as to mitigate ink droplet it is dry when coffee ring effect.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is the structural schematic diagram that a kind of inkjet printing light emitting functional layer ink droplet that the relevant technologies provide generates comet point；
Fig. 2 is a kind of vertical section of pixel defining layer for providing of the relevant technologies in the width direction when being trapezium structure, spray
Ink printing forms the structural schematic diagram of light emitting functional layer；
Fig. 3 is a kind of vertical section of pixel defining layer for providing of the relevant technologies in the width direction when being inverted trapezoidal structure,
The structural schematic diagram of inkjet printing formation light emitting functional layer and cathode layer；
Fig. 4 is a kind of structural schematic diagram for array substrate that the embodiment of the present invention provides；
Fig. 5 is the structural schematic diagram of another array substrate provided in an embodiment of the present invention；
Fig. 6 is the structural representation provided in an embodiment of the present invention that tft array, flatness layer and anode layer is formed on the substrate
Figure；
Fig. 7 is the structure provided in an embodiment of the present invention that silicon nitride film and silicon oxide film are formed on the basis of Fig. 6
Schematic diagram；
Fig. 8 carries out exposure mask to silicon oxide film and silicon nitride film on the basis of Fig. 7 to be provided in an embodiment of the present invention
Structural schematic diagram；
Fig. 9 is the structural schematic diagram that layer is defined in the formation second provided in an embodiment of the present invention on the basis of Fig. 8；
Figure 10 is the structural schematic diagram that layer is defined in the formation first provided in an embodiment of the present invention on the basis of Fig. 9；
Figure 11 defines the knot after the photoresist on layer for the removal second provided in an embodiment of the present invention on the basis of Figure 10
Structure schematic diagram；
Figure 12 is the structural schematic diagram provided in an embodiment of the present invention for forming light emitting functional layer on the basis of fig. 4.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that, term " center ", "upper", "lower", "front", "rear", " left side ",
The orientation or positional relationship of the instructions such as " right side ", "vertical", "horizontal", "top", "bottom", "inner", "outside" is based on the figure
Orientation or positional relationship is merely for convenience of description of the present invention and simplification of the description, rather than the device of indication or suggestion meaning or
Element must have a particular orientation, be constructed and operated in a specific orientation, therefore be not considered as limiting the invention.?
In description of the invention, unless otherwise indicated, the meaning of " plurality " is two or more.
When using inkjet printing technology production light emitting functional layer, as shown in Figure 1, needing first to form pixel on substrate 1
Layer 2 is defined, the solution ink-jet of the material of light emitting functional layer to pixel defining layer 2 is then formed by opening (subpixel regions
A) internal, to form light emitting functional layer.
When printing light emitting functional layer, ink is overflowed in printing to opening surrounding in order to prevent, usually defines pixel
Layer 2 is arranged to up-narrow and down-wide, the structure of top flat, i.e., as depicted in figs. 1 and 2, (the width in the width direction of pixel defining layer 2
Direction refers to the line direction of the two subpixel regions As adjacent with pixel defining layer 2, the direction as shown in arrow a in Fig. 2)
Vertical section is trapezium structure, and pixel defining layer 2 is generally formed on flatness layer and anode layer, in this configuration, due to
The difference and light emitting functional layer itself of surface energy dry behavior between ink droplet and contact position the two of pixel defining layer 2, after dry
Edge easy to form is thick, intermediate thin uneven film, i.e. coffee ring effect is needed to avoid coffee ring effect to pixel
The composition of the material and ink droplet that define layer 2 is adjusted, and it also requires to the membrance casting conditions such as drying temperature, the pressure of ink droplet into
Row is adjusted, and increases research and development difficulty.
In order to solve the above coffee ring effect, as shown in figure 3, pixel defining layer 2 to be arranged to structure wide at the top and narrow at the bottom, i.e.,
(width direction refers to the line side of the two subpixel regions A adjacent with pixel defining layer 2 to pixel defining layer 2 in the width direction
To the direction as shown in arrow a in Fig. 3) vertical section be inverted trapezoidal structure, due between the inverted trapezoidal structure and anode layer
Angle is less than 90 degree, and there are capillary phenomena, and therefore, ink droplet is sprawled under capillary action more uniformly, still, using this knot
Structure especially when the thickness of cathode layer, which is not enough to pave pixel defining layer 2, is formed by opening, holds in deposited cathode layer
The tomography of cathode layer is easily led to, so as to cause cathode layer circuit defect, this needs to be deposited the cathode layer of decades of times thickness just to pave
Pixel defining layer 2 is formed by opening, increases cost of manufacture and time, and the transmitance of device is reduced.
Based on this, the embodiment of the present invention provides a kind of array substrate, referring to fig. 4, comprising: substrate 1, and it is formed in substrate
Substrate 1 is divided into multiple subpixel regions A by the pixel defining layer 2 on 1, the pixel defining layer 2；The pixel defining layer 2 includes
First to be cascading from top to bottom defines layer 21 and second and defines layer 22, this second define layer 22 lower surface width
D2 is greater than the width D 1 for the upper surface that first defines layer 21, (is defined in the width direction with first with defining layer 21 described first
Layer 21 two adjacent subpixel regions A line direction, the direction as shown in arrow a in Fig. 4) two sides formed relative to described
Second defines the retraction structure 23 of layer 22.
Second width D 2 for defining the lower surface of layer 22 refers to that this second defines the lower surface of layer 22 and second define with this
The length on line direction (direction as shown in arrow a in Fig. 4) between 22 two adjacent subpixel regions A of layer, the first boundary
The width D 1 of the upper surface of given layer 21 refer to this first define the upper surface of layer 22 with first two that define layer 21 adjacent
The length on line direction (direction as shown in arrow a in Fig. 4) between the A of subpixel regions.Since this second defines layer 22
The width D 2 of lower surface is greater than the width D 1 for the upper surface that first defines layer 21, therefore, by the upper table for defining layer 21 by first
The edge for the lower surface that layer 22 is defined relative to second in the two sides of face in the width direction is inwardly indented, and can define layer 21 first
Two sides in the width direction form the retraction structure 23 for defining layer 22 relative to second.
Wherein, first define layer 21 and second define the vertical section of layer 22 in the width direction can for trapezium structure or
Person's inverted trapezoidal structure, is not specifically limited herein.As long as the second width D 2 for defining the lower surface of layer 22 is greater than first and defines layer
The width D 1 of 21 upper surface forms the retraction for defining layer 22 relative to second in the two sides for the width direction that first defines layer 21
Structure 23.
In practical applications, by patterning processes formed first define layer 21 and second define layer 22 when, if not special
It is required that defining layer 21 and second according to first that etching technics generally yields defines the vertical section of layer 22 in the width direction as ladder
Shape structure.
And in embodiments of the present invention, it is formed by defining the two sides of layer 21 in the width direction first relative to the second boundary
The retraction structure 23 of given layer 22 sprawls ink droplet using the capillarity of retraction structure 23 more uniform, for solving related skill
The coffee ring effect that pixel defining layer uses trapezium structure to occur in art, and the cathode layer occurred using inverted trapezoidal structure
The problem of tomography.
Therefore, it is based on considerations above, as shown in figure 4, first defines layer 21 and second and define in the width direction perpendicular of layer 22
Straightforward face is preferably all trapezium structure.
The embodiment of the present invention provides a kind of array substrate, since the pixel defining layer 2 includes stacking gradually to set from top to bottom
First set defines layer 21 and second defines layer 22, and the width D 2 of the second lower surface for defining layer 22 is greater than first and defines layer 21
Upper surface width D 1, define layer relative to described second to define the two sides in the width direction of layer 21 described first and formed
22 retraction structure 23, therefore, when ink-jet forms light emitting functional layer, due to being retracted the presence of structure 23, ink droplet is made in capillary
Under can more uniformly drawout come, so as to mitigate ink droplet it is dry when coffee ring effect.
Wherein, first define layer 21 and second define layer 22 thickness can be rationally arranged according to actual conditions.
Illustratively, in practical application, the thickness that can according to need the light emitting functional layer to be formed defines layer to first
21 and second define layer 22 thickness be rationally arranged so that in ink-jet, ink droplet can be in the capillary of retraction structure 23
More uniformly drawout comes under effect, and the problems such as prevent ink overflow and cathode layer tomography.
In one embodiment of the invention, as shown in figure 4, this first define layer 21 thickness H1 be 0.5-1.5 microns, second
The thickness H2 for defining layer 22 is 0.5-1.0 microns.Layer 21 and second, which is defined, by first defines the thickness limit of layer 22 in the above model
In enclosing, when forming light emitting functional layer in the A of subpixel regions, rationally controlled by the thickness to light emitting functional layer, a side
Face can be such that light emitting functional layer uniformly sprawls using capillarity, on the other hand can also prevent light emitting functional layer from overflowing and occurring
Short circuit, and to define layer 22 be inverted trapezoidal structure when second, and second to define layer 22 blocked up and be easy to happen cathode layer tomography
Problem.
In another embodiment of the present invention, as shown in figure 5, being provided with light emitting functional layer 3 in the A of the subpixel regions, and should
The difference that the thickness H3 of light emitting functional layer 3 and first defines the thickness H1 of layer 21 is greater than or equal to 0 and is less than or equal to 100 nanometers.Energy
It enough prevents that the thickness of the light emitting functional layer 3 in inkjet printing is excessive and short circuit occurs.
Wherein, to first define layer 21 and second define layer 22 material be not specifically limited, first defines layer 21 and
Two materials for defining layer 22 may be the same or different.
In one embodiment of the invention, this first define layer 21 be silicon nitride film, this second define layer 22 be silica
Film.Since silica is compared with silicon nitride, etching selection is bigger, and therefore, above first, which defines layer 21 and second, defines layer
22 can be by forming with a patterning processes.
Wherein, it is also necessary to explanation, in ink jet printing process, when ink track shifts or when ejection ink droplet
When generating the situations such as comet point, the second top for defining layer 22 can be retained in by being dropped in the ink that second defines 22 top of layer, from
And the quantity of ink in subpixel regions defined by pixel defining layer 2 is caused to reduce, in turn result in the luminous function in each subpixel regions
The uneven film thickness of ergosphere is even, influences final display effect.
Based on this, in one embodiment of the invention, which is formed with hydrophobic film 24.This
Sample, when inkjet printing, drop trajectory shifts, or when spraying the situations such as ink droplet generation comet point, can be hydrophobic thin
The hydrophobic effect of film 24 and bottom have under the capillarity of the pixel defining layer 2 of retraction structure 23, so that ink droplet is back to
In subpixel regions, prevent from shifting or spraying as drop trajectory leading to the problem of uneven thickness caused by comet point.
Wherein, without limitation to the specific material of the hydrophobic film 24.
In one embodiment of the invention, which is Fluorocarbon polymer film.Fluorocarbon polymer film is (CF2)n
Macromolecule passivating film.Electronegativity in the film due to fluorine element is strong, and atomic radius very little, atomic polarizability is very low, carbon fluorine
The bond energy of carbon-fluorine bond is big in polymer, and fluorine atom is twist distributed along carbon key, has screen effect, intermolecular force
Small, surface can be very low, therefore has good hydrophobicity.
Wherein, the Fluorocarbon polymer film can by etching formed first define layer and second define layer after, after
The continuous upper surface for defining layer 22 to second using fluorocarbon carries out corona treatment and is formed.In above example
In, due to first define layer 21 be silicon nitride film, this second define layer 22 be silicon oxide film.For silicon nitride,
Silica is easier to act on fluorocarbon and form Fluorocarbon polymer film, so as to define the upper table of layer 22 second
Face forms Fluorocarbon polymer film, plays hydrophobic effect.
In another embodiment of the present invention, as shown in figure 5, the array substrate further includes being formed in substrate 1 and pixel defines
Anode layer 4 between layer 2, and the cathode layer 5 being formed in light emitting functional layer 3 and pixel defining layer 2, wherein the anode layer 4
Including the anode 41 being arranged in each subpixel regions A.
In embodiments of the present invention, anode layer 4, cathode layer 5 are formed spontaneous with the light emitting functional layer 3 being arranged between
Optical device.
The selfluminous element can be top illuminating device or dual emission device.
In one embodiment of the invention, which includes the Reflective metal electrodes layer being cascading from top to bottom
And transparent electrode layer；The cathode layer 5 includes the metal electrode layer and transparent electrode protecting layer being cascading from top to bottom.
In embodiments of the present invention, by setting double-layer structure for anode layer 4, on the one hand, by by high work function
Transparent electrode layer is arranged close to light emitting functional layer 3, can reduce the potential barrier between anode 41 and hole transmission layer.On the other hand,
Due to the presence of Reflective metal electrodes layer, which can be top illuminating device, and being capable of micro-cavity structure design difficulty.
It, can be using the metal material production metal electricity of low work function also, by the way that electrode protecting layer is arranged in metal electrode layer surface
Pole layer, such as one or more combination material in lithium, calcium, aluminium, silver, magnesium and lithium fluoride, due to the chemical stabilization of these metal materials
Property is poor, and electrode protecting layer can play a protective role to these metal materials.
Wherein, the material of the transparent electrode protecting layer can be ITO (Indium tin oxide, tin indium oxide), IZO
One or more of (Indium zinc oxide, indium zinc oxide), zinc oxide and indium oxide combined material.
In another embodiment of the present invention, as shown in Figure 4 and Figure 5, which can also include being formed in 1 He of substrate
Tft array 6 and flatness layer 7 between anode layer 4.
Further, which can also include encapsulation film layer and the polaroid etc. being formed on cathode layer 5.
The embodiment of the present invention provides a kind of display panel, including array substrate as described above.
The array substrate that the beneficial effect and above-mentioned technical proposal for the display panel that the embodiment of the present invention provides provide
Beneficial effect is identical, and details are not described herein.
The embodiment of the present invention provides a kind of preparation method of array substrate, referring to fig. 4, comprising:
Pixel defining layer 2 is formed on a substrate 1, which is divided into multiple subpixel regions A for substrate.
The pixel defining layer 2 includes that first to be cascading from top to bottom defines layer 21 and second and define layer 22, and second defines layer
The width of 22 lower surface is greater than the width for the upper surface that first defines layer 21, to define two of layer 21 in the width direction first
Side forms the retraction structure 23 for defining layer 22 relative to second.
On this basis, as shown in figure 4, being formed before pixel defining layer 2 on substrate 1, which can also wrap
It includes and sequentially forms TFT (Thin Film Transistor, thin film transistor (TFT)) array 6, flatness layer 7 and anode layer 4 on substrate 1
Deng.
The embodiment of the present invention provides a kind of preparation method of array substrate, by defining layer 21 in the width direction first
Two sides formed define layer 22 relative to second retraction structure 23, ink-jet formed light emitting functional layer when, due to be retracted structure
23 presence, ink droplet can more uniformly come drawout under capillary action, so as to mitigate coffee ring when ink droplet drying
Effect.
Wherein, first define layer 21 and second define layer 22 material may be the same or different, do not do herein specific
It limits.Below in an example, layer 21 is defined as silicon nitride film with first, second defines layer 22 as silicon oxide film
It is illustrated.
It will be described in detail below by preparation method of the specific example to array substrate.
Firstly, as shown in fig. 6, sequentially form grid, gate insulation layer, active layer, source-drain electrode on substrate 1, it is thin to be formed
After film transistor array 6, flatness layer 7, one layer of anode material is deposited, forms the anode 41 of each subpixel regions A through over etching.
Then, as shown in fig. 7, depositing one on anode layer 4 using the method for chemical vapour deposition technique or magnetron sputtering
Layer silicon nitride film 021, the thickness of the silicon nitride film can be 0.5-1.5 micron, recycling chemical vapour deposition technique or
The method of magnetron sputtering deposits one layer of silicon oxide film 022 on silicon nitride film 021, and thickness can be 0.5-1.0 microns, and
Layer 21 and second is defined by a patterning processes formation first again afterwards and defines layer 22.
It is of course also possible to deposit one layer of nitrogen on anode layer 4 using the method for chemical vapour deposition technique or magnetron sputtering
SiClx film 021 first passes through first time patterning processes formation first and defines layer 21；Deposit one layer of silicon oxide film on substrate again
022, second, which is formed, by second of patterning processes defines layer 22.
When first defines layer 21 and second defines layer 22 by with a patterning processes formation, the specific steps are as follows:
Firstly, being formed after silicon nitride film 021 and silicon oxide film 022 on substrate 1, on silicon oxide film 022
Photoresist 100 is coated, is exposed, develops, remove photosensitive photoresist, form structure as shown in Figure 8.
Then, using fluorocarbon and oxygen as working gas, the silicon oxide film 022 exposed is etched, forms such as Fig. 9
Shown structure.After the completion of the silicon oxide film 022 exposed etches, continue using above-mentioned working gas etch nitride silicon thin film
021, the embodiment of the present invention is different using the etching selection ratio of different materials, so that the method that etch rate is different, due to nitridation
Silicon thin film 021 wants much faster relative to the etch rate of silicon oxide film 022, and there are lateral etching phenomenons, so same
Under the etching condition of sample, the two sides of layer 21 in the width direction can be defined first and form the retraction for defining layer 22 relative to second
Structure 23 forms structure as shown in Figure 10.
Then, using plasma ash process, second can be defined the photoetching on layer 22 using oxygen as working gas
Glue 100 removes, and forms structure as shown in figure 11.At this point it is possible to continue with fluorocarbon to second define layer 22 it is exposed
Outer surface carries out corona treatment to define the upper surface of layer 22 second and form hydrophobic film 24, is formed as shown in Figure 4
Structure.
Specifically, mainly include three phases according to fluorocarbon plasma to the etching mechanism of silicon oxide film,
First stage, fluorocarbon (such as CF4、C4F8、CHF3Deng) it is decomposed under plasmoid the CF of ionic state2With active F
Base, such as following formula (I), the wherein CF of ionic state2Polymerization reaction occurs and generates (CF2)nMacromolecule passivating film is formed in silica table
Face forms Fluorocarbon polymer film, such as following formula (II).Second stage, the CF in Fluorocarbon polymer filmxGroup with
SiO2Reaction generates SiFxCO2, i.e. Fluorocarbon polymer film grows repressed process.Phase III, SiFxCO2In F atom or
SiF is resolved under person's ion bombardmentx, i.e. the process that is etched of silica.The embodiment of the present invention by size to automatic bias or
Person's etch period controls, and in the first stage by etching process control, that is, utilizes fluorocarbon plasma processing oxidation
The exposed surface of silicon goes out one layer of Fluorocarbon polymer film in its Surface Creation, it will be able in the upper table that second defines layer 22
Face forms Fluorocarbon polymer film.
CF4→2F↑+CF2↑ (I)
nCF2↑→(CF2)n (II)
In the process, it first defines the exposed surface of layer 21 and also will form Fluorocarbon polymer film, only relatively
For, the rate of film build of silica will be far longer than the rate of film build of silicon nitride.
After forming pixel defining layer 2, as shown in figure 12, the preparation method of the array substrate can also include: to pass through
The mode of inkjet printing prints light emitting functional layer 3.
Since first defines the two sides of layer 21 in the width direction and is formed with and define layer 22 relative to second in pixel defining layer 2
Retraction structure 23, and the upper surface for defining layer 22 due to second is formed with hydrophobic film 24, passing through inkjet printing
It, can under the hydrophobic effect of hydrophobic film 24, and the capillarity of retraction structure 23 when mode prints light emitting functional layer 3
It is laid in the ink droplet of light emitting functional layer 3 equably in each subpixel regions A, prevents drop trajectory when inkjet printing from occurring partially
Move or lead to the problem of uneven thickness caused by comet point.
Wherein, light emitting functional layer 3 may include luminescent layer.Illustratively, adjacent subpixel regions issue red respectively
Light, blue light and green light.
Further, which can also include hole injection layer and electron injecting layer.Further, should
Light emitting functional layer can also include hole transmission layer and electron transfer layer and hole blocking layer and electronic barrier layer etc..
After forming light emitting functional layer 3 by inkjet printing technology, as shown in figure 5, the preparation method of the array substrate
It can also include: that cathode layer 5 is formed by vapor deposition or magnetron sputtering mode.For the light emitting-type device of top, cathode layer 5
Material can be metal (one of or several combination in such as lithium, calcium, aluminium, silver, magnesium and lithium fluoride) layer with low work content
With by ITO (Indium tin oxide, tin indium oxide), IZO (Indium zinc oxide, indium zinc oxide), zinc oxide and oxygen
Change transparency conducting layer made of one or more of indium combined material.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, can easily think of the change or the replacement, and should all contain
Lid is within protection scope of the present invention.Therefore, protection scope of the present invention should be based on the protection scope of the described claims.
Claims (11)
1. a kind of array substrate characterized by comprising
Substrate, and pixel defining layer over the substrate is formed, the substrate is divided into multiple by the pixel defining layer
Subpixel regions；
The pixel defining layer includes that first to be cascading from top to bottom defines layer and second and define layer, second boundary
The width of the lower surface of given layer is greater than the width for the upper surface that described first defines layer, to define layer along width side described first
To two sides formed define layer relative to described second retraction structure.
2. array substrate according to claim 1, which is characterized in that
Described first define layer with a thickness of 0.5-1.5 microns, described second define layer with a thickness of 0.5-1.0 microns.
3. array substrate according to claim 1, which is characterized in that the described second upper surface for defining layer is formed with hydrophobic
Film.
4. array substrate according to claim 3, which is characterized in that
The hydrophobic film is Fluorocarbon polymer film.
5. array substrate according to claim 1-4, which is characterized in that
Described first defines layer as silicon nitride film, and described second defines layer as silicon oxide film.
6. array substrate according to claim 2, which is characterized in that
Light emitting functional layer, the thickness that the thickness of the light emitting functional layer defines layer with described first are provided in the subpixel regions
The difference of degree is greater than or equal to 0 and is less than or equal to 100 nanometers.
7. array substrate according to claim 6, which is characterized in that
The array substrate further includes the anode layer being formed between the substrate and the pixel defining layer, and is formed in institute
State the cathode layer in light emitting functional layer and pixel defining layer, wherein the anode layer includes being arranged in each subpixel area
Anode in domain.
8. array substrate according to claim 7, which is characterized in that
The anode layer includes the Reflective metal electrodes layer and transparent electrode layer being cascading from top to bottom；
The cathode layer includes the metal electrode layer being cascading from top to bottom and transparent electrode protecting layer.
9. a kind of display panel, which is characterized in that including such as described in any item array substrates of claim 1-8.
10. a kind of preparation method of array substrate characterized by comprising
Pixel defining layer is formed on a substrate, the substrate is divided into multiple subpixel regions by the pixel defining layer；
The pixel defining layer includes that first to be cascading from top to bottom defines layer and second and define layer, second boundary
The width of the lower surface of given layer is greater than the width for the upper surface that described first defines layer, to define layer along width side described first
To two sides formed define layer relative to described second retraction structure；
Wherein, the described first etching selection ratio for defining layer is greater than the described second etching selection ratio for defining layer, and described first
It defines layer and described second and defines layer by being formed with a patterning processes.
11. the preparation method of array substrate according to claim 10, which is characterized in that
Further include: define the exposed surface of layer to described second using fluorocarbon and carry out corona treatment, with
Described second upper surface for defining layer forms hydrophobic film.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910093779.9A CN109830513B (en) | 2019-01-30 | 2019-01-30 | Array substrate, preparation method thereof and display panel |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910093779.9A CN109830513B (en) | 2019-01-30 | 2019-01-30 | Array substrate, preparation method thereof and display panel |
Publications (2)
| Publication Number | Publication Date |
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| CN109830513A true CN109830513A (en) | 2019-05-31 |
| CN109830513B CN109830513B (en) | 2021-03-16 |
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| CN111137013A (en) * | 2020-01-09 | 2020-05-12 | 深圳市华星光电半导体显示技术有限公司 | Inkjet printing method, inkjet printing apparatus, inkjet printing device, and computer-readable storage medium |
| CN111370586A (en) * | 2020-03-18 | 2020-07-03 | 昆山国显光电有限公司 | Display panel, preparation method thereof and display device |
| WO2020244264A1 (en) * | 2019-06-05 | 2020-12-10 | 京东方科技集团股份有限公司 | Display panel and preparation method therefor, and display device |
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