CN109830488A - Light beam imaging device - Google Patents
Light beam imaging device Download PDFInfo
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- CN109830488A CN109830488A CN201711184560.7A CN201711184560A CN109830488A CN 109830488 A CN109830488 A CN 109830488A CN 201711184560 A CN201711184560 A CN 201711184560A CN 109830488 A CN109830488 A CN 109830488A
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- light beam
- imaging device
- beam imaging
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- 238000003384 imaging method Methods 0.000 title claims abstract description 37
- 239000010410 layer Substances 0.000 claims abstract description 158
- 239000002344 surface layer Substances 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000002161 passivation Methods 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000000956 alloy Substances 0.000 claims abstract description 4
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 4
- 239000002131 composite material Substances 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 52
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 8
- 229910052681 coesite Inorganic materials 0.000 claims description 7
- 229910052906 cristobalite Inorganic materials 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052682 stishovite Inorganic materials 0.000 claims description 7
- 229910052905 tridymite Inorganic materials 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052593 corundum Inorganic materials 0.000 claims description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000006263 metalation reaction Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a kind of light beam imaging devices, it include: substrate layer, graph layer, passivation layer and electrode layer, the substrate layer includes bottom and surface layer, the graph layer is located at the top on the surface layer of the substrate layer, the graph layer includes bottom and surface layer, the bottom is that forbidden bandwidth is not less than 2.3eV, and the surface layer is forbidden bandwidth not less than 2.3eV and refractive index is not higher than the bottom；The electrode layer is located at the top on the surface layer of the graph layer, and the electrode layer includes positive electrode and negative electrode, and the positive electrode and the negative electrode are in contact with the surface layer of the graph layer respectively；The electrode layer is that resistivity is not more than 5 × 10‑7Ω m and metal, alloy or the metal/oxide composite material with low-resistivity and low contact berrier for being not more than 1.5eV with the contact berrier of the graph layer.The present invention has the advantage that the imaging process of low cost, low transmission loss, high stability and high uniformity may be implemented.
Description
Technical field
The present invention relates to semiconductor fields, and dress is imaged more particularly to a kind of light beam including semiconductor material with wide forbidden band
It sets.
Background technique
Light beam imaging device is the core of laser radar, is had in terms of automobile is unmanned with secure environment monitoring
Excellent potential application advantage.Traditional light beam imaging device generally comprises prism, is unfavorable for integrated.Modern light beam imaging
Device uses semiconductor integrated circuit, has the advantages that small in size, price is low and convenient for integrated.But due to the property of material
It can limit, light beam imaging device haves the shortcomings that higher cost, transmission loss are higher, stability is lower and uniformity is lower.
Summary of the invention
The purpose of the present invention is to provide a kind of light beam imaging devices, and low cost, low transmission may be implemented using the device
It is lost, the imaging process of high stability and high uniformity.
In order to achieve the above objectives, the present invention adopts the following technical scheme:
Light beam imaging device according to an embodiment of the present invention, the device include substrate layer, graph layer, passivation layer and electrode
Layer, which is characterized in that the substrate layer includes bottom and surface layer, and the graph layer is located at the upper of the surface layer of the substrate layer
Side, the graph layer include bottom and surface layer, and the bottom of the substrate layer is semiconductor or insulating material, the substrate
The surface layer of layer is forbidden bandwidth not less than 2.3eV and refractive index is not higher than the refractive index of the bottom of the graph layer
Low refraction wide-band gap material, the graph layer are made of graphic element, and the bottom of the graph layer is that forbidden bandwidth is not small
In the high refraction semiconductor material with wide forbidden band of 2.3eV and refractive index higher than 2.3, the surface layer of the graph layer is forbidden bandwidth
Not less than 2.3eV and refractive index is not higher than the low refraction wide-band gap material of the refractive index of the bottom of the graph layer, described
Passivation layer is located at the top on the surface layer of the graph layer, and the passivation layer is that forbidden bandwidth is not less than 2.3eV and refractive index
Not higher than the low refraction wide-band gap material of the refractive index on the surface layer of the graph layer, the electrode layer is located at the graph layer
The surface layer top, the electrode layer includes positive electrode and negative electrode, the positive electrode and the negative electrode respectively with institute
The surface layer for stating graph layer is in contact, and the electrode layer is that resistivity is not more than 5 × 10-7Ω m and with the graph layer
Contact berrier is not more than metal, alloy or the metal/oxide composite wood with low-resistivity and low contact berrier of 1.5eV
Material.
Preferably, the bottom of the substrate layer includes but is not limited to Si, SiO2And Al2O3Material.
Preferably, the bottom of the substrate layer with a thickness of 0.1mm-10mm.
Preferably, the surface layer of the substrate layer includes but is not limited to ZnS, AlP, GaP, SiC, GaN, AlN, TiO2、
ZnO and ITO material.
Preferably, the surface layer of the substrate layer with a thickness of 300nm-3000nm.
Preferably, the bottom of the graph layer includes but is not limited to ZnS, AlP, GaP, SiC, GaN, AlN, TiO2、
ZnO and ITO material.
Preferably, the graphic element of the graph layer is cube, cuboid, triangle body, cylinder, cylindroid or corresponding
Hole.
Preferably, the graphic element of the bottom of the graph layer be cuboid, the cuboid with a thickness of 5nm-
500nm, width 5nm-1000nm, there is no limit for length.
Preferably, the spacing of the graphic element of the bottom of the graph layer is 5nm-1000nm.
Preferably, the surface layer of the graph layer includes but is not limited to ZnS, AlP, GaP, SiC, GaN, AlN, TiO2、
ZnO and ITO material.
Preferably, the graphic element on the surface layer of the graph layer is cuboid or cylinder.
Preferably, the surface layer of the graph layer with a thickness of 5nm-1000nm.
Preferably, the cuboid width on the surface layer of the graph layer is 5nm-1000nm, and there is no limit for length.
Preferably, the body diameter on the surface layer of the graph layer is 5nm-1000nm.
Preferably, the spacing of the graphic element on the surface layer of the graph layer is 5nm-1000nm.
Preferably, the passivation layer includes but is not limited to Si, SiO2And Al2O3Material.
Preferably, the passivation layer with a thickness of 5nm-3000nm.
Preferably, the electrode layer includes but is not limited to Ag, Cu, Au, Al, Pt, Ni, Cr, Ti and ITO material.
Preferably, the electrode layer with a thickness of 5nm-500nm.
Detailed description of the invention
Attached drawing is used for a further understanding of the present invention, is used to explain the present invention in conjunction with following specific embodiment,
But it is not construed as limiting the invention.
Fig. 1 is a kind of structural unit schematic diagram of embodiment of light beam imaging device provided by the present invention；
Fig. 2 is a kind of structural unit schematic diagram of embodiment of light beam imaging device provided by the present invention along Fig. 1
In 500 place vertical planes left cross-sectional view；
Fig. 3 is a kind of structural unit schematic diagram of embodiment of light beam imaging device provided by the present invention along Fig. 1
In 320 place horizontal planes cross-sectional view of bowing.
Appended drawing reference: 100: light beam imaging device, 200: substrate layer, 210: the bottom of substrate layer, 220: the table of substrate layer
Layer, 310: the bottom of graph layer, 320: the surface layer of graph layer, 400: passivation layer, 500: electrode layer.
Specific embodiment
Below with reference to embodiment the present invention is described in detail.It should be noted that the embodiment of the present invention is exemplary, only
It is used to explain the present invention, is not construed as limiting the invention.
Referring to figure 1, figure 2 and figure 3, light beam imaging device 100 according to an embodiment of the present invention, including substrate layer 200, figure
Layer 300, passivation layer 400 and electrode layer 500.The substrate layer includes bottom 210 and surface layer 220.Graph layer 300 is located at substrate layer
200 top, the graph layer include bottom 310 and surface layer 320.The bottom 210 of the substrate layer is insulating material, preferably,
The bottom 210 of substrate layer is SiO2Material.The bottom with a thickness of 0.5mm.The bottom main function of the substrate layer be carrying and
Convenient for integrated.
The surface layer 220 of substrate layer is forbidden bandwidth not less than 2.3eV and refractive index is not higher than the folding of the bottom 310 of graph layer
The low refraction wide-band gap material of rate is penetrated, preferably, the surface layer 220 of substrate layer is ZnS material.The room temperature forbidden bandwidth of ZnS material
For 3.7eV, refractive index 2.2.The main function on the surface layer of substrate layer is that light is limited in the bottom of graph layer to transmit.The lining
The surface layer of bottom with a thickness of 1000nm.
Graph layer 300 is made of graphic element, and the bottom 310 of graph layer is that forbidden bandwidth is not less than 2.3eV and refractive index
High refraction semiconductor material with wide forbidden band higher than 2.3, preferably, the bottom 310 of graph layer is GaP material.The room temperature of GaP material
Forbidden bandwidth is 2.3eV, refractive index 3.5.The surface layer of the graph layer is forbidden bandwidth not less than 2.3eV and refractive index is not higher than
The low refraction wide-band gap material of the refractive index of the bottom of the graph layer, preferably, the surface layer 320 of graph layer is AlP material.AlP
The room temperature forbidden bandwidth of material is 2.5eV, refractive index 3.0.It is understood that the refractive index of GaP material be higher than ZnS and
AlP material is totally reflected light in GaP material and the interface of ZnS and AlP material, to realize that light passes in GaP material
It is defeated.
The graphic element of the bottom 310 of graph layer is cuboid, the cuboid with a thickness of 20nm, width 100nm, it is long
There is no limit for degree.The spacing of the graphic element of the bottom of the graph layer is 100nm.
The graphic element on the surface layer 320 of graph layer is cuboid, the cuboid with a thickness of 20nm, width 100nm, it is long
There is no limit for degree.The spacing of the graphic element on the surface layer of the graph layer is 100nm.
Passivation layer 400 is located at the top on the surface layer 310 of graph layer, which is that forbidden bandwidth is not less than 2.3eV and folding
Low refraction wide-band gap material of the rate not higher than the refractive index on the surface layer 310 of graph layer is penetrated, preferably, passivation layer 400 is SiO2Material
Material.SiO2The room temperature forbidden bandwidth of material is 8.0eV, refractive index 1.5.Passivation layer 400 with a thickness of 200nm.It is understood that
If figure layer material directly with extraneous long term, is easy for by chemical attack or mechanical scuffing.The master of passivation layer
Acting on is that figure layer material is made to be isolated from the outside, and prevents graph layer impaired.Meanwhile passivation layer refractive index is lower than the table of graph layer
Layer can play the role of the transmission loss for reducing light.
Electrode layer 500 is located at the top on the surface layer 310 of graph layer, which includes positive electrode and negative electrode, the positive electricity
Pole and the negative electrode are in contact with the surface layer of the graph layer respectively, which is that resistivity is not more than 5 × 10-7Ω m and with
The contact berrier of the graph layer is not more than metal, alloy or the metal/oxidation with low-resistivity and low contact berrier of 1.5eV
Object composite material.Preferably, electrode layer is Al/Au material, Al with a thickness of 10nm, Au with a thickness of 150nm.The electricity of Al material
Resistance rate is 2.7 × 10-8The resistivity of Ω m, Au material is 2.4 × 10-8Ω·m.The main function of motor layer is connection power supply
With graph layer, the light transmitted in graph layer is modulated.It is understood that the material of low-resistivity has high conduction
Performance, low contact berrier are conducive to the conduction of electric current.Also, the thermal conductivity of metal material is high, is conducive to radiate.
Low cost, low transmission loss, high stability and height may be implemented in light beam imaging device according to an embodiment of the present invention
The imaging process of uniformity.The bottom and passivation layer of substrate layer select cheap material, can reduce production cost, and should
The refractive index of material is lower than graph layer, can play the role of the transmission loss for reducing light.Figure layer material is transparent for light wave, right
The absorption of light wave is small, can reduce the transmission loss of light.The electrode layer material of low-resistivity has high electric conductivity, low connects
Potential barrier and high thermal conductivity are touched, the conduction and heat dissipation of electric current are conducive to.Heat dissipation well can be improved light beam imaging stability and
Uniformity.
Claims (18)
1. a kind of light beam imaging device, which includes substrate layer, graph layer, passivation layer and electrode layer, which is characterized in that described
Substrate layer includes bottom and surface layer, and the graph layer is located at the top on the surface layer of the substrate layer, and the graph layer includes
Bottom and surface layer, the bottom of the substrate layer are semiconductor or insulating material, and the surface layer of the substrate layer is to prohibit
Bandwidth is not less than 2.3eV and refractive index is not higher than the low refraction broad stopband material of the refractive index of the bottom of the graph layer
Material, the graph layer are made of graphic element, and the bottom of the graph layer is that forbidden bandwidth is not less than 2.3eV and refractive index
High refraction semiconductor material with wide forbidden band higher than 2.3, the surface layer of the graph layer are that forbidden bandwidth is not less than 2.3eV and folding
Low refraction wide-band gap material of the rate not higher than the refractive index of the bottom of the graph layer is penetrated, the passivation layer is located at the figure
The top on the surface layer of shape layer, the passivation layer is forbidden bandwidth not less than 2.3eV and refractive index is not higher than the graph layer
The surface layer refractive index low refraction wide-band gap material, the electrode layer is located at the upper of the surface layer of the graph layer
Side, the electrode layer includes positive electrode and negative electrode, and the positive electrode and the negative electrode are respectively and described in the graph layer
Surface layer is in contact, and the electrode layer is that resistivity is not more than 5 × 10-7Ω m and it is not more than with the contact berrier of the graph layer
Metal, alloy or the metal/oxide composite material with low-resistivity and low contact berrier of 1.5eV.
2. light beam imaging device according to claim 1, which is characterized in that the bottom of the substrate layer includes but not
It is limited to Si, SiO2And Al2O3Material.
3. light beam imaging device according to claim 1, which is characterized in that the bottom of the substrate layer with a thickness of
0.1mm-10mm。
4. light beam imaging device according to claim 1, which is characterized in that the surface layer of the substrate layer includes but not
It is limited to ZnS, AlP, GaP, SiC, GaN, AlN, TiO2, ZnO and ITO material.
5. light beam imaging device according to claim 1, which is characterized in that the surface layer of the substrate layer with a thickness of
300nm-3000nm。
6. light beam imaging device according to claim 1, which is characterized in that the surface layer of the substrate layer with a thickness of
300nm-3000nm。
7. light beam imaging device according to claim 1, which is characterized in that the figure list of the bottom of the graph layer
Member is cuboid, the cuboid with a thickness of 5nm-500nm, width 5nm-1000nm, length there is no limit.
8. light beam imaging device according to claim 1, which is characterized in that the figure list of the bottom of the graph layer
The spacing of member is 5nm-1000nm.
9. light beam imaging device according to claim 1, which is characterized in that the surface layer of the graph layer includes but not
It is limited to ZnS, AlP, GaP, SiC, GaN, AlN, TiO2, ZnO and ITO material.
10. light beam imaging device according to claim 1, which is characterized in that the figure on the surface layer of the graph layer
Unit is cuboid or cylinder.
11. light beam imaging device according to claim 1, which is characterized in that the thickness on the surface layer of the graph layer
For 5nm-1000nm.
12. light beam imaging device according to claim 1, which is characterized in that the surface layer of the graph layer it is rectangular
Body width is 5nm-1000nm, and there is no limit for length.
13. light beam imaging device according to claim 1, which is characterized in that the cylinder on the surface layer of the graph layer
Diameter is 5nm-1000nm.
14. light beam imaging device according to claim 1, which is characterized in that the figure on the surface layer of the graph layer
The spacing of unit is 5nm-1000nm.
15. light beam imaging device according to claim 1, which is characterized in that the passivation layer include but is not limited to Si,
SiO2And Al2O3Material.
16. light beam imaging device according to claim 1, which is characterized in that the passivation layer with a thickness of 5nm-
3000nm。
17. light beam imaging device according to claim 1, which is characterized in that the electrode layer include but is not limited to Ag,
Cu, Au, Al, Pt, Ni, Cr, Ti and ITO material.
18. light beam imaging device according to claim 1, which is characterized in that the electrode layer with a thickness of 5nm-
500nm。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711184560.7A CN109830488B (en) | 2017-11-23 | 2017-11-23 | Light beam imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711184560.7A CN109830488B (en) | 2017-11-23 | 2017-11-23 | Light beam imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109830488A true CN109830488A (en) | 2019-05-31 |
| CN109830488B CN109830488B (en) | 2021-02-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711184560.7A Active CN109830488B (en) | 2017-11-23 | 2017-11-23 | Light beam imaging device |
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| Country | Link |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1130817A (en) * | 1994-11-19 | 1996-09-11 | Lg电子株式会社 | Manufacturing method of semiconductor laser diode |
| JP4601464B2 (en) * | 2005-03-10 | 2010-12-22 | 株式会社沖データ | Semiconductor device, print head, and image forming apparatus using the same |
| CN103022891A (en) * | 2012-12-04 | 2013-04-03 | 北京工业大学 | High-power semiconductor laser chip integrated with protection diode |
-
2017
- 2017-11-23 CN CN201711184560.7A patent/CN109830488B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1130817A (en) * | 1994-11-19 | 1996-09-11 | Lg电子株式会社 | Manufacturing method of semiconductor laser diode |
| JP4601464B2 (en) * | 2005-03-10 | 2010-12-22 | 株式会社沖データ | Semiconductor device, print head, and image forming apparatus using the same |
| CN103022891A (en) * | 2012-12-04 | 2013-04-03 | 北京工业大学 | High-power semiconductor laser chip integrated with protection diode |
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| CN109830488B (en) | 2021-02-19 |
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Effective date of registration: 20191017 Address after: 314400 building 4, No.17 Caohejing Road, Haining Economic Development Zone, Haining City, Jiaxing City, Zhejiang Province Applicant after: Guoke optical core (Haining) Technology Co., Ltd. Address before: 100000 Haidian District Qinghua East Road, Beijing 35, 305, room 3, Apricot Garden, Institute of semiconductors, Chinese Academy of Sciences. Applicant before: Zhongke Tian core technology (Beijing) Co., Ltd. |
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