CN109830418A - For driving sweep mechanism, magnetic control source and the magnetron sputtering apparatus of magnetron - Google Patents
For driving sweep mechanism, magnetic control source and the magnetron sputtering apparatus of magnetron Download PDFInfo
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- CN109830418A CN109830418A CN201711181073.5A CN201711181073A CN109830418A CN 109830418 A CN109830418 A CN 109830418A CN 201711181073 A CN201711181073 A CN 201711181073A CN 109830418 A CN109830418 A CN 109830418A
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Abstract
Sweep mechanism, magnetic control source and the magnetron sputtering apparatus that the invention discloses a kind of for driving magnetron.The sweep mechanism includes: guide rail, and finite place piece is arranged on guide rail；Moving structure is arranged on guide rail and can move back and forth along guide rail；Driving assembly, it is rotatably arranged on guide rail, it is rotated again along target center axis for driving moving structure to be moved to after the first predeterminated position or the second predeterminated position on guide rail, so that magnetron is rotated along target center axis again corresponding to after the fringe region or middle section of target.Therefore, sweep mechanism of the invention, when realizing the switching of magnetron different location, motion profile is simple, easily controllable, and reliability is higher, at the same time it can also carry out technique suitable for a plurality of types of magnetrons.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, and in particular to a kind of sweep mechanism for driving magnetron, one
Magnetic control source and a kind of magnetron sputtering apparatus including the magnetic control source of the kind including the sweep mechanism.
Background technique
Magnetron sputtering or sputtering (Sputtering) deposition technique are physical vapour deposition (PVD) (Physical Vapor
Deposition, PVD) one kind, be a kind of film fabrication techniques most widely used in semi-conductor industry, refer to using physics
Method prepares the thin film preparation process of film.Physical gas phase deposition technology can be applied to many technology fields, such as copper interconnecting line skill
Silicon perforation (Through Silicon Via, TSV) technology in art, encapsulation field etc..
In recent years, making the hole sidewalls deposition film of high-aspect-ratio with the development of technology becomes possible, one of them
The technology being widely used is self ionizing technology, and the sputtering particle of sub-fraction is adsorbed in deep hole in this art.
Why being referred to as self ionizing technology is to be adsorbed onto target material surface again because of part plasma sputter in technical process to go to sputter
More ions or atom out can use less argon process gas in this way, allow technique in lower air pressure
Lower progress.When there is sufficient plasma sputter to maintain plasma not need to be passed through argon gas again in technical process, just reach
A kind of most extreme situation, which is referred to as, to be continued from sputtering.
It as described in Figure 1, is the structural schematic diagram of magnetron sputtering apparatus in typical self ionizing sputtering technology.Magnetron sputtering is set
Standby 200 include reaction chamber 220, technique component 230 and the magnetic control source that 220 top of reaction chamber is arranged in, which includes
The motor 250 that target 240, magnetron, the sweep mechanism 100 for driving magnetron motion and driving sweep mechanism 100 move.
Above-mentioned magnetron sputtering apparatus can be applied to the deposition on such as barrier layer TaN/Ta.Deposition barrier layer is come
It says, magnetron can reach better technological effect when corresponding target rim region rotates.This may mainly exist with small magnetron tube
It is related to realize higher ionization level that higher power density is produced under relatively lower power.But only to target
Fringe region, which carries out corrosion, will lead to the redeposition (re-deposition) for the central area not being corroded to.However, for
The sputtering on barrier layer, redeposition may be a problem very serious, because the deposition of partial barrier is in nitrogen atmosphere
(reactive sputtering) carried out, deposit is metal nitride, such as TaN, TiN.These redeposited metal nitride materials
It is easy to peel off from target material surface, to become the sources of particles inside reaction chamber.Redeposition is formed in target in order to prevent
The blocked up peeling of the barrier material on surface, most common method are to be cleaned up in advance.That is sputtering technology is point
It is completed for two steps, is that magnetron rotates in corresponding target rim region first, completes the deposition to wafer, magnetron turns later
The cleaning target technique of second step is carried out to target middle section.The technique for clearing up target may not be in every wafer technique
Middle progress, it may be possible to which substrate even several hundred just need to carry out once.
It is that skin is driven by the positive and negative rotation using motor in the existing sweep mechanism for realizing the switching of magnetron two-position
Tape handler rotation, so that magnetron be driven to realize two-position switching.But due to using belt gear,
Periodic adjustment tensile force is needed, belt is regularly replaced, the service life of sleeve mechanism is lower.
Therefore, the sweep mechanism for how designing a kind of simple and easily controllable driving magnetron of structure becomes this field urgently
Technical problem to be solved.
Summary of the invention
The present invention is directed at least solve one of the technical problems existing in the prior art, a kind of magnetic control source and one kind are proposed
Magnetron sputtering apparatus including the magnetic control source.
To achieve the goals above, the first aspect of the present invention, provide it is a kind of for driving the sweep mechanism of magnetron,
Include:
Finite place piece is arranged on the guide rail in guide rail；
Moving structure is arranged on the guide rail and can move back and forth along the guide rail；
Driving assembly is rotatably arranged on the guide rail, for driving the moving structure to move up in the guide rail
It is rotated again along target center axis after moving to the first predetermined position or the second predetermined position, so that magnetron corresponds to target
It is rotated again along the target center axis after fringe region or middle section.
Preferably, the moving structure includes the first sliding block, and first sliding block is movably disposed on the guide rail,
For connecting the magnetron；
The driving component includes rotary shaft, crank, first connecting rod and the first connector, in which:
One end of the rotary shaft pass through the crank after be rotatably arranged on the guide rail, the crank with it is described
Rotary shaft is fixedly connected；
One end of the first connecting rod is rotatably connected with the crank, and the other end rotatably connects with first connector
It connects；
First connector is fixed on first sliding block.
Preferably, it is described when the rotary shaft drives crank rotation along the first preset direction or the second preset direction
Crank can be abutted with the locating part, so that the magnetron corresponds to the fringe region or middle section of target.
Preferably, the crank includes the first inclined wall and the second inclined wall respectively for the locating part；
First sliding block when being moved to first predeterminated position on the guide rail, first inclined wall with it is described
Locating part abuts；
First sliding block when being moved to second predeterminated position on the guide rail, second inclined wall with it is described
Locating part abuts.
Preferably, the moving structure further includes the second sliding block, and second sliding block is movably disposed at the guide rail
On, counterweight is connected on second sliding block；
The driving component further includes second connecting rod and the second connector, in which:
One end of the second connecting rod is rotatably connected with the crank, and the other end rotatably connects with second connector
It connects；
Second connector is fixed on second sliding block.
Preferably, the rotary shaft is located at the middle position of the guide rail, and the rotary shaft and the target center axis are same
Axis setting；
The two sides of the guide rail are arranged in first sliding block and the relatively described axisymmetry of second sliding block.
Preferably, first preset direction is that counterclockwise, second preset direction is clockwise.
Preferably, the moving structure includes rack gear；
The driving component includes rotary shaft and gear, in which:
One end of the rotary shaft pass through the gear after be rotatably arranged on the guide rail, the gear with it is described
Rotary shaft is fixedly connected, and is engaged with the rack gear.
The second aspect of the present invention provides a kind of magnetic control source, comprising:
Target；
Magnetron, the magnetron is located above the target, and is fixed on moving structure；
Sweep mechanism, the sweep mechanism are the sweep mechanism recorded above, for making magnetron correspond to target
It is rotated again along the target center axis after the fringe region or middle section of material.
The third aspect of the present invention provides a kind of magnetron sputtering apparatus, including the magnetic control source recorded above.
Sweep mechanism of the invention, driving assembly therein can drive moving structure to be moved to the first default position along guide rail
Set with the second predeterminated position so that magnetron correspond to target fringe region and middle section.So as to reality
Two-position switching of the existing magnetron on target, and then the sweep mechanism that can use the structure realizes that magnetron sputtering and target are clear
Wash two-step process.In addition, sweep mechanism of the invention, motion profile is simple, easily controllable, and reliability is higher, while can fit
Technique is carried out with a plurality of types of magnetrons.
Magnetic control source of the invention has the sweep mechanism recorded above, therefore, when realizing that magnetron two-position switches,
Motion profile is simple, easily controllable, and reliability is higher, while can be applicable in a plurality of types of magnetrons to carry out technique.
Magnetron sputtering apparatus of the invention has the structure for the magnetic control source recorded above, and magnetic control source has again to be recorded above
Sweep mechanism, therefore, when realizing the two-position switching of magnetron, motion profile is simple, easily controllable, reliability compared with
Height, while a plurality of types of magnetrons can be applicable in carry out technique.
Detailed description of the invention
The drawings are intended to provide a further understanding of the invention, and constitutes part of specification, with following tool
Body embodiment is used to explain the present invention together, but is not construed as limiting the invention.In the accompanying drawings:
Fig. 1 is the structural schematic diagram of magnetron sputtering apparatus in the prior art；
Fig. 2 is the structural schematic diagram of sweep mechanism in the present invention；
Fig. 3 is the schematic perspective view of sweep mechanism in the present invention；
Fig. 4 is the structural schematic diagram that rotary shaft rotates counterclockwise in sweep mechanism in the present invention；
Fig. 5 is the structural schematic diagram that rotary shaft rotates clockwise in sweep mechanism in the present invention.
Description of symbols
100: sweep mechanism；
110: guide rail；
111: locating part；
120: moving structure；
121: the first sliding blocks；
122: the second sliding blocks；
123: counterweight；
130: driving assembly；
131: rotary shaft；
132: crank；
132a: the first inclined wall；
132b: the second inclined wall；
133: first connecting rod；
134: the first connectors；
135: second connecting rod；
136: the second connectors；
200: magnetron sputtering apparatus；
210: magnetron；
220: reaction chamber；
230: technique component；
240: target；
250: motor.
Specific embodiment
Below in conjunction with attached drawing, detailed description of the preferred embodiments.It should be understood that this place is retouched
The specific embodiment stated is merely to illustrate and explain the present invention, and is not intended to restrict the invention.
As shown in Fig. 2, Fig. 3, Fig. 4 and Fig. 5, the first aspect of the present invention is related to a kind of for driving the scanning of magnetron
Mechanism 100, the sweep mechanism 100 include guide rail 110, moving structure 120 and driving assembly 130.Wherein, it is arranged on guide rail 110
Finite place piece 111.Moving structure 120 is arranged on guide rail 110, and can move back and forth along guide rail 110.Driving assembly 130
It is rotatably arranged on guide rail 110, for driving moving structure 120 to be moved to the first predeterminated position or on guide rail 110
It is rotated again along target center axis (not showed that in figure) after two predeterminated positions, so that magnetron 210 corresponds to target (in the present invention
Do not show that, Fig. 1 in the prior art can be referred to) fringe region or middle section after again along target center axis rotate.
It should be noted that not made for the specific location of above-mentioned the first predeterminated position and the second predeterminated position
It limits, in practical application, those skilled in the art can determine the first predeterminated position and the second default position according to actual needs
The specific location set.For example, first predeterminated position can be position corresponding with the fringe region of target.Correspondingly,
Two predeterminated positions can be position corresponding with the middle section of target.
For ease of description, corresponding with the fringe region of target with the first predeterminated position, the second predeterminated position and target
Middle section it is corresponding for be illustrated.
Specifically, as shown in figure 4, when carrying out magnetron sputtering technique to chip, above-mentioned driving assembly 130 drives movement
Structure 120 is moved to the first predetermined position on guide rail 110, and drives 120 edge of moving structure in first predetermined position
The rotation of target center axis.In this way, magnetron 210 can be made to be in the fringe region of target, and in the fringe region along target
Central axis rotation, to complete the magnetron sputtering technique to chip.
After completing magnetron sputtering technique, as shown in figure 5, above-mentioned driving assembly 130 drives moving structure 120 leading
It is moved to the second predetermined position on rail 110, and turns in second predetermined position driving moving structure 120 along target center axis
It is dynamic.In this way, magnetron 210 can be made to be in the middle section of target, and rotated in the middle section along target center axis, with
The work such as just cleared up target or repaired.
Therefore, the sweep mechanism 100 of the present embodiment structure can use driving assembly 130 and moving structure 120 driven to realize
Two-position switching (the first predeterminated position and the second predeterminated position), so as to realize magnetron 210 in the central area of target
Switching between domain and the marginal position of target, and then magnetron sputtering technique and the cleaning two-step process to target may be implemented.
In addition, the sweep mechanism 100 of the present embodiment structure, motion profile is simple, and easily controllable, reliability is higher, while can fit
Technique is carried out with a plurality of types of magnetrons 210.
Preferably, as shown in Figures 2 and 3, specific real as the first of above-mentioned moving structure 120 and driving assembly 130
Apply mode.The moving structure 120 may include the first sliding block 121, which is movably disposed on guide rail 110,
For example, linear bearing or sliding bearing can be set inside first sliding block 121.First sliding block 121 is for connecting magnetic control
Pipe 210.
Above-mentioned driving assembly 130 includes rotary shaft 131, crank 132, first connecting rod 133 and the first connector 134.Rotation
One end of axis 131 is rotatably arranged on above-mentioned guide rail 110 after passing through crank 132, and crank 132 and rotary shaft 131 are fixed
Connection, for example, crank 132 can be threadedly coupled with rotary shaft 131, alternatively, crank 132 can also be welded on rotary shaft 131
Together etc..Rotary shaft 131 can be driven by external power source (for example, servo motor etc.), realize rotation.
One end of above-mentioned first connecting rod 133 is rotatably connected with crank 132, for example, one end of the first connecting rod 133 can be with
Hingedly with crank 132, alternatively, one end of first connecting rod 133 can be connect with crank 132 by bearing etc..The first connecting rod
133 other end is rotatably connected with the first connector 134, and similarly, the other end of the first connecting rod 133 can connect with first
Fitting 134 is hinged or bearing connects etc..
Above-mentioned first connector 134 is fixed on the first sliding block 121, for example, can by riveting, the side such as weld and be spirally connected
Formula.
That is, crank 132, first connecting rod 133, the first connector 134 and the first sliding block 121 constitute crank block
Mechanism.In this way, crank 132 passes through as shown in figure 4, rotary shaft 131 drives crank 132 to rotate when carrying out magnetron sputtering technique
It is pre- that first connecting rod 133, the first connector 134 drive the first sliding block 121 and magnetron 210 to be moved to first along guide rail 110 together
If at position (fringe region of corresponding target), and rotating at this location around target center axis, magnetron sputtering technique is completed.Instead
It, as shown in figure 5, crank 132 is driven by first connecting rod 133, the first connector 134 after completing magnetron sputtering technique
First sliding block 121 and magnetron 210 are moved at the second predeterminated position (middle section of corresponding target) along guide rail 110 together,
And rotated in the position around target center axis, with techniques such as the cleanings of completing target.
Therefore, the sweep mechanism 100 of the present embodiment structure, using crank 132, first connecting rod 133 and the first sliding block 121
Two-position switching of the magnetron 210 on target may be implemented, so as to realize magnetron sputtering in the slider-crank mechanism of composition
Two-step process is cleaned with target.In addition, the sweep mechanism 100 of the present embodiment structure, the motion profile of slider-crank mechanism is simple,
It is easily controllable, and reliability is higher, while can be applicable in a plurality of types of magnetrons 210 to carry out technique.
It preferably, should when above-mentioned rotary shaft 131 is rotated along the first preset direction or the second preset direction driving crank 132
Crank 132 can be abutted with locating part 111, so that magnetron 210 corresponds to the fringe region or middle section of target.
Above-mentioned first preset direction can be counterclockwise, and correspondingly, the second preset direction can be clockwise.
Certainly, the first preset direction can also be clockwise, and correspondingly, the second preset direction can be counterclockwise
With the first preset direction be counterclockwise, the second preset direction be clockwise direction for be illustrated.
Specifically, as shown in figure 4, when rotary shaft 131 is rotated along the first preset direction (counter clockwise direction), crank 132
Drive the first sliding block 121 and magnetron 210 together towards the first predeterminated position (corresponding to target rim region) movement, when first
When sliding block 121 and magnetron 210 reach the first predeterminated position, crank 132 is abutted with locating part 111 just.In this way, the first sliding block
121 and the linear motion of magnetron 210 stop so that magnetron 210 accurately corresponds to target rim region, and
Entire scan mechanism 100 rotates (being namely equivalent to revolution) relative to target center axis at the position.
As shown in figure 5, crank 132 drives first when rotary shaft 131 is rotated along the second preset direction (clockwise direction)
Sliding block 121 and magnetron 210 are together towards the second predeterminated position (corresponding to target middle section) movement, when the first sliding block 121
When reaching the second predeterminated position with magnetron 210, crank 132 is abutted with locating part 111 again just.In this way, the first sliding block 121
Stop with the linear motion of magnetron 210, so that magnetron 210 accurately corresponds to target middle section, and at this
Entire scan mechanism 100 rotates (being namely equivalent to revolution) relative to target center axis at position.
Preferably, as shown in Figure 4 and Figure 5, in order to be further simplified the structure of sweep mechanism 100, above-mentioned crank 132 includes
Respectively for the first inclined wall 132a and the second inclined wall 132b of locating part 111.
Wherein, as shown in figure 4, when the first sliding block 121 is moved to the first predeterminated position on guide rail 110, the first inclination
Wall 132a is abutted with locating part 111.
As shown in figure 5, when the first sliding block 121 is moved to the second predeterminated position on guide rail 110, the second inclined wall 132b
It is abutted with locating part 111.
Preferably, as shown in Figure 4 and Figure 5, in order to improve the structural stability of sweep mechanism 100, above-mentioned moving structure 120
It further include the second sliding block 122, which is movably disposed on guide rail 110, for example, the inside of the second sliding block 122
Linear bearing or sliding bearing can be set.Counterweight 123 is connected on second sliding block 122, the weight of the counterweight 123 can
With consistent or roughly the same with the weight of magnetron 210.
Above-mentioned driving assembly 130 further includes second connecting rod 135 and the second connector 136.Wherein, the one of second connecting rod 135
End is rotatably connected with crank 132, and the other end is rotatably connected with the second connector 136.Second connector 136 is fixed on second
On sliding block 122.
In order to realize weight balance function, specifically, as shown in figure 4, when carrying out magnetron sputtering technique, in rotary shaft 131
Under driving, the first sliding block 121 and the second sliding block 122 move on guide rail 110 simultaneously, and the two the direction of motion on the contrary, in this way,
It can make magnetron 210 and counterweight 123 while reach the first predeterminated position (fringe region of corresponding target).Conversely, such as
Shown in Fig. 5, when clearing up target, the first sliding block 121 and the second sliding block 122 move in the same direction on guide rail 110
It is dynamic, it also allows for magnetron 210 and counterweight 123 while arriving at the second predeterminated position (middle section of corresponding target), so as to
Target is cleared up.Therefore, sweep mechanism 100 can be made more steady at runtime, motion process is relatively reliable.
Preferably, as described in Fig. 2 and Fig. 3, in order to enable the operation of sweep mechanism 100 is more steady, simultaneously, additionally it is possible to mention
The process yields of high magnetron sputtering.Above-mentioned rotary shaft 131 is located at the middle position of guide rail 110, and rotary shaft 131 and target center
Axis coaxial arrangement.
Meanwhile in order to further increase the operation stability of sweep mechanism 100, above-mentioned first sliding block 121 and the second sliding block
122 relative rotation axis 131 are symmetricly set on the two sides of guide rail 110.
Preferably as second of specific embodiment of above-mentioned moving structure and driving assembly, above-mentioned moving structure packet
Include rack gear (not showing that in figure).Above-mentioned driving assembly includes rotary shaft 131 and gear (not showing that in figure).
Wherein, one end of rotary shaft 131 is rotatably arranged on guide rail 110 after passing through gear, gear and rotary shaft 131
It is fixedly connected, and is engaged with rack.
Similarly, when carrying out magnetron sputtering technique, control rotary shaft 131 drives along the first preset direction (counter clockwise direction)
Gear rotation, gear driving rack is mobile, (corresponds to target to drive magnetron 210 to be moved to the first predeterminated position along guide rail 110
The fringe region of material) at, to carry out magnetron sputtering technique.
When completing magnetron sputtering technique, when needing to clean target, control rotary shaft 131 is (clockwise along the second preset direction
Direction) rotation of sliding tooth wheel, to drive magnetron 210 to be in the second predeterminated position (middle section of corresponding target), at this
The target such as is cleaned in position.
The sweep mechanism 100 of the present embodiment structure realizes 210 different location of magnetron using rack and pinion drive mechanism
Switching, motion profile is simple, and easily controllable, reliability is higher, at the same can be applicable in a plurality of types of magnetrons 210 come into
Row technique.
The second aspect of the present invention provides a kind of magnetic control source (not showing that in figure).The magnetic control source includes target (in figure
Do not show that), magnetron 210 and sweep mechanism 100.Magnetron 210 is located above target, and is fixed on moving structure 120
On.Sweep mechanism 100 includes the sweep mechanism 100 recorded above, for make magnetron 210 correspond to target fringe region or
It is rotated again along target center axis after middle section.
The magnetic control source of the present embodiment structure has the sweep mechanism 100 recorded above, therefore, is realizing magnetron 210 pairs
When position switches, motion profile is simple, and easily controllable, reliability is higher, while can be applicable in a plurality of types of magnetrons 210
To carry out technique.
The third aspect of the present invention provides a kind of magnetron sputtering apparatus (not showing that in figure), magnetron sputtering apparatus packet
Magnetic control source is included, which includes the magnetic control source recorded above.
The magnetron sputtering apparatus of the present embodiment structure has the structure for the magnetic control source recorded above, before magnetic control source includes again
The structure for the sweep mechanism 100 that text is recorded, therefore, when realizing that 210 two-position of magnetron switches, motion profile is simple, easily
In control, reliability is higher, while can be applicable in a plurality of types of magnetrons 210 to carry out technique.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of for driving the sweep mechanism of magnetron characterized by comprising
Finite place piece is arranged on the guide rail in guide rail；
Moving structure is arranged on the guide rail and can move back and forth along the guide rail；
Driving assembly is rotatably arranged on the guide rail, for driving the moving structure to be moved on the guide rail
It is rotated again along target center axis after first predeterminated position or the second predeterminated position, so that magnetron corresponds to the fringe region of target
Or it is rotated again along the target center axis after middle section.
2. according to claim 1 for driving the sweep mechanism of magnetron, which is characterized in that
The moving structure includes the first sliding block, and first sliding block is movably disposed on the guide rail, for connecting
State magnetron；
The driving component includes rotary shaft, crank, first connecting rod and the first connector, in which:
One end of the rotary shaft is rotatably arranged on the guide rail after passing through the crank, the crank and the rotation
Axis is fixedly connected；
One end of the first connecting rod is rotatably connected with the crank, and the other end is rotatably connected with first connector；
First connector is fixed on first sliding block.
3. according to claim 2 for driving the sweep mechanism of magnetron, which is characterized in that
When the rotary shaft drives crank rotation along the first preset direction or the second preset direction, the crank can with it is described
Locating part abuts, so that the magnetron corresponds to the fringe region or middle section of target.
4. according to claim 3 for driving the sweep mechanism of magnetron, which is characterized in that
The crank includes the first inclined wall and the second inclined wall respectively for the locating part；
First sliding block is when being moved to first predeterminated position on the guide rail, first inclined wall and the limit
Part abuts；
First sliding block is when being moved to second predeterminated position on the guide rail, second inclined wall and the limit
Part abuts.
5. according to claim 4 for driving the sweep mechanism of magnetron, which is characterized in that
The moving structure further includes the second sliding block, and second sliding block is movably disposed on the guide rail, and described second
Counterweight is connected on sliding block；
The driving component further includes second connecting rod and the second connector, in which:
One end of the second connecting rod is rotatably connected with the crank, and the other end is rotatably connected with second connector；
Second connector is fixed on second sliding block.
6. according to claim 5 for driving the sweep mechanism of magnetron, which is characterized in that
The rotary shaft is located at the middle position of the guide rail, and the rotary shaft and the target center axis are coaxially disposed；
The two sides of the guide rail are arranged in first sliding block and the relatively described axisymmetry of second sliding block.
7. according to claim 6 for driving the sweep mechanism of magnetron, which is characterized in that
First preset direction is that counterclockwise, second preset direction is clockwise.
8. according to claim 1 for driving the sweep mechanism of magnetron, which is characterized in that
The moving structure includes rack gear；
The driving component includes rotary shaft and gear, in which:
One end of the rotary shaft is rotatably arranged on the guide rail after passing through the gear, the gear and the rotation
Axis is fixedly connected, and is engaged with the rack gear.
9. a kind of magnetic control source characterized by comprising
Target；
Magnetron, the magnetron is located above the target, and is fixed on moving structure；
Sweep mechanism, the sweep mechanism is the sweep mechanism according to claim 1-8 any one, for making magnetron
Corresponding to after the fringe region or middle section of target again along the target center axis rotate.
10. a kind of magnetron sputtering apparatus, which is characterized in that including magnetic control source as claimed in claim 9.
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| CN111948292A (en) * | 2020-06-29 | 2020-11-17 | 中国科学院深圳先进技术研究院 | Scanning device |
| CN114156149A (en) * | 2021-11-25 | 2022-03-08 | 北京北方华创微电子装备有限公司 | Magnetron device and semiconductor processing equipment |
| CN115172137A (en) * | 2022-07-12 | 2022-10-11 | 中国原子能科学研究院 | Target changing device for ion source and ion source |
| CN116288225A (en) * | 2023-03-06 | 2023-06-23 | 深圳市矩阵多元科技有限公司 | A device and method for adjusting the radius of rotation of a PVD magnetron and the power of a planar target |
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| CN111948292A (en) * | 2020-06-29 | 2020-11-17 | 中国科学院深圳先进技术研究院 | Scanning device |
| CN114156149A (en) * | 2021-11-25 | 2022-03-08 | 北京北方华创微电子装备有限公司 | Magnetron device and semiconductor processing equipment |
| CN114156149B (en) * | 2021-11-25 | 2024-05-17 | 北京北方华创微电子装备有限公司 | Magnetron device and semiconductor process equipment |
| CN115172137A (en) * | 2022-07-12 | 2022-10-11 | 中国原子能科学研究院 | Target changing device for ion source and ion source |
| CN116288225A (en) * | 2023-03-06 | 2023-06-23 | 深圳市矩阵多元科技有限公司 | A device and method for adjusting the radius of rotation of a PVD magnetron and the power of a planar target |
| WO2024183164A1 (en) * | 2023-03-06 | 2024-09-12 | 深圳市矩阵多元科技有限公司 | Device and method for adjusting rotation radius of pvd magnetron and source power of planar target |
| CN116288225B (en) * | 2023-03-06 | 2024-12-17 | 深圳市矩阵多元科技有限公司 | Device and method for adjusting rotating radius of PVD magnetron and planar target power supply power |
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