CN109817555B - Automatic PECVD film thickness statistics and compensation system - Google Patents
Automatic PECVD film thickness statistics and compensation system Download PDFInfo
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Abstract
The invention discloses a PECVD film thickness automatic statistical compensation system, which belongs to the field of silicon solar cell manufacturing and aims to: the invention solves the problem that the film thickness is difficult to effectively monitor in time in the PECVD procedure in the prior art, which causes high reject ratio of products, and the invention comprises PECVD furnace tube equipment and automatic wafer loading and unloading equipment, and is characterized by also comprising an ATM system and a central control computer; the automatic transmission system comprises an ATM system, a central control computer and a control system, wherein the ATM system is used for collecting film thickness data of a solar cell conveyed between PECVD furnace tube equipment and automatic wafer assembling and disassembling equipment and transmitting the collected film thickness data to the central control computer; and the central control computer is used for calculating the time required by the solar cell film coating process in the PECVD furnace tube equipment and sending the time to the PECVD furnace tube equipment for process compensation. According to the invention, the film thickness data is measured in time, so that the complete monitoring of the film thickness change of the solar cell is completed, the process time can be automatically adjusted, and the integral finished product quality of the solar cell is improved.
Description
Technical Field
The invention belongs to the field of silicon solar cell manufacturing, and particularly relates to a PECVD film thickness automatic statistical compensation system.
Background
In the production of the solar cell, a process called a PECVD process is adopted, and the PECVD process is used for depositing a silicon nitride film on the silicon solar cell to reduce the reflectivity of sunlight so as to improve the conversion efficiency of the cell. In the process, the graphite boat is used as a carrier for plating the oxidation resistant layer on the battery piece by the PECVD furnace tube equipment, the graphite boat can stack a silicon nitride layer on the boat body along with the increase of the using times, the silicon nitride layer can influence the electric conductivity of the battery piece in the graphite boat and further influence the integral uniformity after film plating, and if the film thickness is not effectively monitored in time, batch color difference pieces are finally generated to influence the reject ratio of products.
The existing processing method generally monitors the uniformity of the film thickness by manually taking the wafer, but the method is often slow and has incomplete data, so that the overall efficiency is low and the processing effect is poor, so that the design of a system which can monitor the film thickness data of each boat more accurately, efficiently and timely is very important.
Disclosure of Invention
The invention aims to: the problem of among the prior art thick film is difficult to obtain effectively in time monitoring and leads to the product defective rate high in the PECVD process is solved, a thick automatic statistics compensating system of PECVD membrane that silicon solar wafer finished product quality is higher is provided.
The technical scheme adopted by the invention is as follows:
an automatic PECVD film thickness statistical compensation system comprises PECVD furnace tube equipment and automatic wafer loading and unloading equipment, and is characterized by also comprising an ATM system and a central control computer;
and the ATM system is used for collecting the film thickness data of the solar cell conveyed between the PECVD furnace tube equipment and the automatic wafer assembling and disassembling equipment and transmitting the collected film thickness data to the central control computer.
And the central control computer is used for setting a film thickness control central value, a film thickness control line and a film thickness abnormal sheet control number, then calculating the compensation time required by the solar cell film coating process in the PECVD furnace tube equipment and sending the compensation time to the PECVD furnace tube equipment for process compensation.
The ATM system comprises a film thickness acquisition module and a signal transmission module, wherein the film thickness acquisition module acquires film thickness data of each solar cell; the signal transmission module transmits all the film thickness data acquired by the film thickness acquisition module to the central control computer.
The central control computer comprises a communication module and a data processing module, wherein the communication module is used for collecting film thickness data transmitted by the ATM system and manually set film thickness control central values, film thickness control lines and film thickness abnormal piece control numbers; the data processing module processes the acquired film thickness data on the basis of the set film thickness control center value, the film thickness control line and the film thickness abnormal piece control number; the communication module transmits the data processed by the data processing module to the PECVD furnace tube equipment.
On the basis, the central value of film thickness control set in the central control computer is M nm, the film thickness control line is M +/-10 nm, and the number of film thickness abnormal pieces is Z.
According to the film thickness data measured by the ATM system, the central control computer screens out the film thickness data according to the thickness set by the film thickness control line, the solar cell piece film thickness exceeding the film thickness control line is a film thickness abnormal piece, the film thickness data of the film thickness abnormal piece cannot enter the acquired data pool, and after the film thickness of the solar cell piece of a graphite boat is measured by the ATM system, if the number of the film thickness abnormal pieces is not less than the control number of the film thickness abnormal piece, the PECVD furnace tube equipment does not perform process time compensation; if the number of the film thickness abnormal sheets is less than the control number of the film thickness abnormal sheets, the film thickness data of all the solar battery sheets of the graphite boat are counted to calculate an average value, corresponding process compensation time is calculated according to a set average value range, then the information is fed back to PECVD furnace tube equipment, and the PECVD furnace tube equipment performs corresponding process time compensation.
In the actual production process, the number of solar cells of a graphite boat is W, and the number of solar cells entering a data cell after being measured by an ATM system is H, so that the process compensation time T is as follows:
when W-H > Z, T is 0;
when W-H is less than or equal to Z, calculating the average film thickness of H solar cells, and setting the average film thickness as X;
when X-M is more than or equal to-1.2 and less than or equal to 1.2 and X-M is not equal to 0, T is +/-5 s,
when X-M is more than or equal to-2.4 and less than or equal to 2.4 and | X-M | is more than 1.2, T is +/-10 s,
when X-M is more than or equal to-3.6 and less than or equal to 3.6 and | X-M | is more than 2.4, T is +/-15 s,
when X-M is more than or equal to-4.8 and less than or equal to 4.8 and | X-M | is more than 3.6, T is +/-20 s,
when X-M is more than or equal to-6.0 and less than or equal to 6.0 and | X-M | is more than 4.8, T is +/-25 s,
when X-M is more than or equal to-7.2 and less than or equal to 7.2 and | X-M | is more than 6.0, T is +/-30 s,
when X-M is more than or equal to 8.4 and less than or equal to 8.4 and | X-M | is more than 7.2, T is +/-35 s,
when X-M is more than or equal to-9.6 and less than or equal to 9.6 and | X-M | is more than 8.4, T is +/-40 s,
when X-M is more than or equal to-10.0 and less than or equal to 10.0 and | X-M | is more than 9.6, T is +/-45 s;
wherein, when X-M is larger than 0, the corresponding time is required to be increased, and when X-M is smaller than 0, the corresponding time is required to be decreased.
And more specifically: 416 solar cells of a graphite boat, H solar cells entering a data pool after being measured by an ATM system, 30 film thickness abnormal cell control numbers and 76nm film thickness control center values, wherein the average value of all the film thicknesses entering the data pool of the graphite boat is determined as X, when process time compensation is required, 416-H is not more than 30, and the compensation rule is as follows:
when X-76 is more than or equal to-1.2 and less than or equal to 1.2 and X-M is not equal to 0, T is +/-5 s,
when X-76 is more than or equal to-2.4 and less than or equal to 2.4 and | X-M | is more than 1.2, T is +/-10 s,
when X-76 is more than or equal to-3.6 and less than or equal to 3.6 and | X-M | is more than 2.4, T is +/-15 s,
when X-76 is more than or equal to 4.8 and less than or equal to 4.8 and | X-M | is more than 3.6, T is +/-20 s,
when X-76 is more than or equal to 6.0 and less than or equal to 6.0 and | X-M | is more than 4.8, T is +/-25 s,
when X-76 is more than or equal to-7.2 and less than or equal to 7.2 and | X-M | is more than 6.0, T is +/-30 s,
when X-76 is more than or equal to 8.4 and less than or equal to 8.4 and | X-M | is more than 7.2, T is +/-35 s,
when X-76 is more than or equal to-9.6 and less than or equal to 9.6 and | X-M | is more than 8.4, T is +/-40 s,
when X-76 is more than or equal to-10.0 and less than or equal to 10.0 and | X-M | is more than 9.6, T is +/-45 s;
in summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:
in the invention, the film thickness data is measured in time by arranging the ATM system, the complete monitoring of the film thickness change of the battery piece is completed, the process time can be automatically adjusted according to the use times of the graphite boat, the average value of the film thickness is controlled within an ideal range, and the color difference piece generated by the process time which cannot be adjusted in time due to the different use times of the graphite boat is reduced. Meanwhile, the problems of fragments, scratches, fingerprints and the like generated by manual piece taking tests are avoided.
Drawings
FIG. 1 is a schematic diagram of an automatic PECVD film thickness statistic compensation system according to the present invention;
FIG. 2 is a flow chart of the PECVD film thickness automatic statistical compensation system of the present invention;
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Example 1
An automatic PECVD film thickness statistical compensation system comprises PECVD furnace tube equipment and automatic wafer loading and unloading equipment, and is characterized by also comprising an ATM system and a central control computer; the automatic transmission system comprises an ATM system, a central control computer and a control system, wherein the ATM system is used for collecting film thickness data of a solar cell conveyed between PECVD furnace tube equipment and automatic wafer assembling and disassembling equipment and transmitting the collected film thickness data to the central control computer; and the central control computer is used for calculating the time required by the solar cell film coating process in the PECVD furnace tube equipment and sending the time to the PECVD furnace tube equipment for process compensation.
Example 2
On the basis of the embodiment 1, the ATM system comprises a film thickness acquisition module and a signal transmission module, wherein the film thickness acquisition module acquires film thickness data of each solar cell; the signal transmission module transmits all the film thickness data acquired by the film thickness acquisition module to a central control computer; the central control computer also comprises a communication module and a data processing module, wherein the communication module is used for collecting film thickness data transmitted by the ATM system and manually set film thickness control central values, film thickness control lines and film thickness abnormal piece control numbers; the data processing module processes the acquired film thickness data on the basis of the set film thickness control center value, the film thickness control line and the film thickness abnormal piece control number; the communication module transmits the data processed by the data processing module to the PECVD furnace tube equipment.
Example 3
Based on the above embodiments, when the number of the film thickness abnormal pieces exceeds the control number of the film thickness abnormal pieces, the PECVD furnace tube equipment does not perform the process time compensation.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (4)
1. An automatic PECVD film thickness statistical compensation system comprises PECVD furnace tube equipment and automatic wafer loading and unloading equipment, and is characterized by also comprising an ATM system and a central control computer;
the automatic transmission system comprises an ATM system, a central control computer and a control system, wherein the ATM system is used for collecting film thickness data of a solar cell conveyed between PECVD furnace tube equipment and automatic wafer assembling and disassembling equipment and transmitting the collected film thickness data to the central control computer;
the central control computer is used for calculating the time required by the solar cell film coating process in the PECVD furnace tube equipment and sending the time to the PECVD furnace tube equipment for process compensation;
the specific mode is as follows:
the film thickness control center value set in the central control computer is M nm, the film thickness control line is M +/-10 nm, and the control number of the film thickness abnormal pieces is Z pieces;
according to the film thickness data measured by the ATM system, the central control computer screens out the film thickness data according to the thickness set by the film thickness control line, the solar cell piece film thickness exceeding the film thickness control line is a film thickness abnormal piece, the film thickness data of the film thickness abnormal piece cannot enter the acquired data pool, and after the film thickness of the solar cell piece of a graphite boat is measured by the ATM system, if the number of the film thickness abnormal pieces is not less than the control number of the film thickness abnormal piece, the PECVD furnace tube equipment does not perform process time compensation; if the number of the film thickness abnormal sheets is less than the control number of the film thickness abnormal sheets, performing statistical calculation on the film thickness data of all the solar battery sheets of the graphite boat to obtain an average value, calculating corresponding process compensation time according to a set average value range, and then feeding the corresponding process compensation time back to PECVD furnace tube equipment, wherein the PECVD furnace tube equipment performs corresponding process time compensation;
when the number of the solar cells of the graphite boat is W, and the number of the solar cells entering the data pool after being finally measured by the ATM system is H, the process compensation time T is as follows:
when W-H > Z, T is 0;
when W-H is less than or equal to Z, calculating the average film thickness of H solar cells, and setting the average film thickness as X;
when X-M is more than or equal to-1.2 and less than or equal to 1.2 and X-M is not equal to 0, T is +/-5 s,
when X-M is more than or equal to-2.4 and less than or equal to 2.4 and | X-M | is more than 1.2, T is +/-10 s,
when X-M is more than or equal to-3.6 and less than or equal to 3.6 and | X-M | is more than 2.4, T is +/-15 s,
when X-M is more than or equal to-4.8 and less than or equal to 4.8 and | X-M | is more than 3.6, T is +/-20 s,
when X-M is more than or equal to-6.0 and less than or equal to 6.0 and | X-M | is more than 4.8, T is +/-25 s,
when X-M is more than or equal to-7.2 and less than or equal to 7.2 and | X-M | is more than 6.0, T is +/-30 s,
when X-M is more than or equal to 8.4 and less than or equal to 8.4 and | X-M | is more than 7.2, T is +/-35 s,
when X-M is more than or equal to-9.6 and less than or equal to 9.6 and | X-M | is more than 8.4, T is +/-40 s,
when X-M is more than or equal to-100 and less than or equal to 10.0 and | X-M | is more than 9.6, T is +/-45 s;
wherein, when X-M is larger than 0, the corresponding time is required to be increased, and when X-M is smaller than 0, the corresponding time is required to be decreased.
2. The PECVD film thickness automatic statistic compensation system of claim 1, wherein the ATM system comprises a film thickness acquisition module and a signal transmission module, the film thickness acquisition module acquires the film thickness data of each solar cell; the signal transmission module transmits all the film thickness data acquired by the film thickness acquisition module to the central control computer.
3. A PECVD film thickness automatic statistical compensation system according to claim 1 or 2, wherein the central control computer further comprises a communication module and a data processing module, the communication module is used for collecting film thickness data transmitted by the ATM system and manually set film thickness control center values, film thickness control lines and film thickness abnormal sheet control numbers; the data processing module processes the acquired film thickness data on the basis of the set film thickness control center value, the film thickness control line and the film thickness abnormal piece control number; the communication module transmits the data processed by the data processing module to the PECVD furnace tube equipment.
4. The system of claim 3, wherein the PECVD furnace apparatus does not compensate for process time when the number of film thickness anomaly pads exceeds the control number of film thickness anomaly pads.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8796048B1 (en) * | 2011-05-11 | 2014-08-05 | Suvolta, Inc. | Monitoring and measurement of thin film layers |
| CN104979228A (en) * | 2014-04-11 | 2015-10-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Film thickness control method and semiconductor processing device |
| CN107331734A (en) * | 2017-08-14 | 2017-11-07 | 通威太阳能（安徽）有限公司 | A method for processing reworked sheets after PECVD coating of battery sheets |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8796048B1 (en) * | 2011-05-11 | 2014-08-05 | Suvolta, Inc. | Monitoring and measurement of thin film layers |
| CN104979228A (en) * | 2014-04-11 | 2015-10-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Film thickness control method and semiconductor processing device |
| CN107331734A (en) * | 2017-08-14 | 2017-11-07 | 通威太阳能（安徽）有限公司 | A method for processing reworked sheets after PECVD coating of battery sheets |
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