CN109808086B - Active deformation compensation clamping device for ultra-precision cutting of soft and brittle ultra-thin crystals - Google Patents
Active deformation compensation clamping device for ultra-precision cutting of soft and brittle ultra-thin crystals Download PDFInfo
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- CN109808086B CN109808086B CN201910085763.3A CN201910085763A CN109808086B CN 109808086 B CN109808086 B CN 109808086B CN 201910085763 A CN201910085763 A CN 201910085763A CN 109808086 B CN109808086 B CN 109808086B
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- 239000013078 crystal Substances 0.000 title claims abstract description 45
- 238000005520 cutting process Methods 0.000 title claims abstract description 19
- 238000001179 sorption measurement Methods 0.000 claims abstract description 32
- 239000000919 ceramic Substances 0.000 claims abstract description 19
- 239000011521 glass Substances 0.000 claims abstract description 18
- 230000001105 regulatory effect Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 5
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 238000009434 installation Methods 0.000 claims description 3
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 abstract description 16
- 238000001514 detection method Methods 0.000 abstract description 8
- 238000003754 machining Methods 0.000 abstract description 4
- 230000005284 excitation Effects 0.000 abstract description 3
- 230000003068 static effect Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000005234 chemical deposition Methods 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Abstract
本发明涉及一种用于软脆超薄晶体超精密切削的主动变形补偿装夹装置，属于闪烁晶体超精密加工领域。该装置能够主动补偿传统真空吸盘吸附软脆超薄碘化铯晶体时难以避免的吸附变形，以实现吸附变形误差的确定性主动补偿，为加工中降低晶体的厚度，并保持晶体各点厚度一致性提供技术支持。本发明首先基于静态变形原理，通过分析紧支撑条件下双层矩形压电薄板影响函数的解析表达式，建立反映加载电压与变形量之间关系的影响函数，而后在干涉仪等高精度面形检测装置辅助下实现对真空吸附变形的离线检测，最后通过改变各压电陶瓷电极的激发电压主动改变玻璃薄板层的形状，对真空吸附变形进行主动变形补偿，改善超薄碘化铯晶体的超精密切削加工精度。
The invention relates to an active deformation compensation clamping device used for ultra-precision cutting of soft and brittle ultra-thin crystals, and belongs to the field of ultra-precision machining of scintillation crystals. The device can actively compensate for the unavoidable adsorption deformation when the traditional vacuum sucker adsorbs soft and brittle ultra-thin cesium iodide crystals, so as to realize the deterministic active compensation of adsorption deformation errors, reduce the thickness of the crystal during processing, and keep the thickness of each point of the crystal consistent. Provide technical support. Based on the principle of static deformation, the invention firstly establishes the influence function reflecting the relationship between the loading voltage and the deformation amount by analyzing the analytical expression of the influence function of the double-layer rectangular piezoelectric thin plate under the condition of tight support. The off-line detection of vacuum adsorption deformation is realized with the aid of the detection device. Finally, by changing the excitation voltage of each piezoelectric ceramic electrode, the shape of the glass thin plate layer is actively changed, and the vacuum adsorption deformation is actively compensated to improve the ultra-thin cesium iodide crystal. Precision cutting accuracy.
Description
Technical Field
The invention relates to an active deformation compensation clamping device for ultra-precision cutting of a soft and brittle ultrathin crystal, and belongs to the field of ultra-precision machining of scintillation crystals.
Background
The cesium iodide crystal CsI belongs to an inorganic scintillation crystal typical of the field. The inorganic scintillation crystal can emit ultraviolet rays or visible light after absorbing the energy of X-rays, gamma-rays or other high-energy particles, wherein the CsI crystal has more outstanding performance, the emission spectrum of the CsI crystal can be matched with a silicon photodiode, the light yield is high, the irradiation length is shorter than that of a NaI (Tl) crystal, the mechanical property is good, the CsI crystal has high light yield and relatively lower production cost, and the inorganic scintillation crystal becomes an excellent and practical scintillation crystal material, is particularly suitable for detecting medium and low energy particles, and has wide application in the aspect of X-ray detection.
In the ultraprecise cutting processing of the cesium iodide crystal CsI, the crystal is clamped and positioned in a vacuum adsorption mode generally. As the cesium iodide crystal CsI used in the X-ray detection aspect is a soft and fragile ultrathin sheet-type element, the typical sizes are as follows: the thickness uniformity after processing is influenced by the fact that the cesium iodide crystal is small in elastic modulus and can be deformed remarkably under the action of vacuum adsorption pressure (the thickness uniformity is generally required to be better than 1-3 mu m). Related studies have shown that vacuum adsorption deformation is one of the most important reasons for the difficulty in controlling the thickness consistency of cesium iodide crystals after processing.
The ultra-precision cutting process realizes the control of thickness consistency by iterative processing of the front surface and the back surface of the cesium iodide crystal, and the whole process has strict requirements on the plane precision of the reference surface of the vacuum chuck and the deformation quantity introduced by vacuum adsorption.
Disclosure of Invention
The invention aims to solve the problem that the thicknesses of all points of a processed product are inconsistent due to deformation generated during vacuum adsorption and fixation in the ultraprecise cutting processing of a cesium iodide crystal CsI, and provides an active deformation compensation clamping device for ultraprecise cutting of a soft and brittle ultrathin crystal. The device can actively compensate the adsorption deformation which is difficult to avoid when the traditional vacuum chuck adsorbs the soft and fragile ultrathin cesium iodide crystals, so that the deterministic active compensation of the adsorption deformation error is realized, and the technical support is provided for rapidly reducing the thickness consistency error of the crystals in the processing.
The purpose of the invention is realized by the following technical scheme.
The active deformation compensation clamping device is fixedly arranged above a vacuum chuck in a single-point diamond super-precision lathe;
the clamping device comprises a glass sheet, a built-in electrode, piezoelectric ceramics, a back electrode, a flexible supporting column, a deformation unit mounting frame and a voltage regulating circuit;
the deformation unit mounting frame is of a two-body structure, and the two-body structure is assembled to form a concave structure, namely a groove is formed in the middle; the two-body structure is respectively provided with a flexible supporting column; the built-in electrode and the back electrode are respectively positioned at two sides of the piezoelectric ceramic and then are jointly fixed on the bottom surface of the glass sheet to form a clamped part; the clamped part is fixed in the deformation unit mounting frame through a flexible support column; the clamped part is provided with a plurality of vacuum suction holes; the voltage regulating circuit is used for regulating the built-in electrode and the back electrode;
the contact part of the flexible supporting column and the clamped part is a rubber O-shaped ring;
the working process is as follows: placing the crystals with the same thickness to be processed on the upper surface of the glass sheet, deforming during vacuum adsorption, and detecting the deformation caused by the vacuum adsorption through an interferometer; and the voltage between the built-in electrode and the back electrode is controlled by the voltage regulating circuit to deform the piezoelectric ceramic so as to realize active deformation compensation.
Advantageous effects
(1) The method is based on a static deformation principle, an analytical expression of an influence function of the double-layer rectangular piezoelectric sheet under a tight support condition is analyzed, the influence function reflecting the relation between loading voltage and deformation is established, then the off-line detection of the vacuum adsorption deformation is realized under the assistance of a high-precision surface shape detection device such as an interferometer, finally the shape of the glass sheet layer is actively changed by changing the excitation voltage of each piezoelectric ceramic electrode, the active deformation compensation is carried out on the vacuum adsorption deformation, and the ultra-precision cutting machining precision of the ultrathin cesium iodide crystal is improved.
(2) The off-line detection of the vacuum adsorption deformation is realized under the assistance of high-precision surface shape detection devices such as an interferometer, the size and the distribution of the adsorption deformation can be accurately measured, and a foundation is laid for quantitative compensation.
(3) The shape of the glass sheet layer is actively changed by changing the excitation voltage of each piezoelectric ceramic electrode, the vacuum adsorption deformation is actively compensated, and the ultra-precision cutting machining precision of the ultrathin cesium iodide crystal is improved.
(4) The method can be applied to the ultra-precision cutting processing of soft and fragile ultrathin scintillation crystal elements such as cesium iodide crystals, thallium-doped cesium iodide crystals and the like. The active deformation compensation clamping device developed by the invention has the advantages of simple structure, high reliability, small vacuum adsorption deformation, basic automation realization of the active compensation process and easy control.
Drawings
FIG. 1 is a structural view of a deformation unit;
FIG. 2 back electrode distribution map;
FIG. 3 is an interferometer inspection view;
FIG. 4 is a diagram illustrating the effect of the active deformation compensation clamping device of embodiment 1 on the deformation of vacuum adsorption; wherein a is a vacuum adsorption deformation effect diagram before active deformation compensation; b is a vacuum adsorption deformation effect diagram after active deformation compensation;
FIG. 5 is a diagram illustrating the effect of the active deformation compensation clamping device of embodiment 2 on the correction of vacuum adsorption deformation; wherein a is a vacuum adsorption deformation effect diagram before active deformation compensation; b is a vacuum adsorption deformation effect diagram after active deformation compensation.
The piezoelectric ceramic thin plate is 1-glass thin plate, 2-built-in electrodes, 5-flexible.
Detailed Description
The invention is further described with reference to the following figures and examples.
Example 1
The active deformation compensation clamping device is fixedly arranged above a vacuum chuck in a single-point diamond super-precision lathe;
the clamping device comprises a glass sheet 1, a built-in electrode 2, piezoelectric ceramics 3, a back electrode 4, a flexible supporting column 5, a deformation unit mounting frame 6 and a voltage regulating circuit 7;
the deformation unit mounting frame 6 is of a two-body structure, and the two-body structure is assembled to form a concave structure, namely a groove is formed in the middle; the two-body structure is respectively provided with a flexible supporting column 5; the built-in electrode 2 and the back electrode 4 are respectively positioned at two sides of the piezoelectric ceramic 3 and then are jointly fixed on the bottom surface of the glass sheet 1 to form a clamped part; the clamped part is fixed in the deformation unit mounting frame 6 through the flexible supporting column 5; the clamped part is provided with a plurality of vacuum suction holes; the voltage regulating circuit 7 is used for regulating the built-in electrode 2 and the back electrode 4.
The contact part of the flexible supporting column 5 and the clamped part is a rubber O-shaped ring.
The compensation process of the device is as follows: placing the crystals with the same thickness to be processed on the upper surface of the glass sheet 1, deforming during vacuum adsorption, and detecting the deformation caused by the vacuum adsorption through an interferometer; the voltage between the built-in electrode 2 and the back electrode 4 is controlled by the voltage regulating circuit 7 to deform the piezoelectric ceramic 3; to achieve active deformation compensation.
As shown in fig. 1, the glass sheet 1 is connected with the built-in electrode 2 through a glue layer, the built-in electrode 2 is connected with the piezoelectric ceramic 3 through an electrochemical deposition method, and the back electrode 4 is connected with the piezoelectric ceramic 3 through an electrochemical deposition method. The glass sheet 1 to the flexible support columns 5 together constitute a deformation unit. The detailed back electrode distribution is shown in fig. 2. The deformation unit installation frame 6 is mechanically connected with the flexible supporting column 5, the deformation unit installation frame 6 is installed on the upper portion of the vacuum chuck through screws, and the vacuum generator is installed on the lower portion of the vacuum chuck to jointly form a vacuum adsorption unit. And the voltage between the built-in electrode 2 and the back electrode 4 is controlled through the voltage regulating circuit 7, so that the piezoelectric ceramic 3 is controlled to deform, and active deformation compensation is realized.
In the embodiment described with reference to fig. 4, the cesium iodide crystal size is 10mm × 10mm × 70 μm, and the active deformation compensation clamping device includes a glass thin plate 50mm in diameter, a built-in electrode chemical deposition 200 μm, a piezoelectric ceramic PZT-5A, a back electrode, a flexible supporting column, a deformation unit mounting frame, a vacuum chuck, and a vacuum generator.
Placing the equal-thickness crystal to be processed on the upper surface of the glass sheet 1, deforming during vacuum adsorption, and detecting the deformation caused by vacuum adsorption through an interferometer, as shown in fig. 3; the voltage between the built-in electrode 2 and the back electrode 4 is controlled through the voltage regulating circuit 7, and the deformation of the piezoelectric ceramic 3 is controlled; to achieve active deformation compensation.
As shown in fig. 4a, the vacuum absorption deformation is PV 2.378 wavelength when not actively compensated, and 1 wavelength is 0.6328 μm, and as shown in fig. 4b, the vacuum absorption deformation is PV 0.695 wavelength after actively compensated, which meets the requirement of ultra-precision cutting.
Example 2:
the embodiment is described with reference to fig. 5, the cesium iodide crystal size is phi 25.4mm × 100 μm, and the active deformation compensation clamping device comprises a glass sheet 50mm in diameter, a built-in electrode chemical deposition 200 μm, a piezoelectric ceramic PZT-5A, a back electrode, a flexible supporting column, a deformation unit mounting frame, a vacuum chuck and a vacuum generator.
As shown in fig. 5a, the vacuum absorption deformation is PV 3.711 wavelength when the active compensation is not performed, and as shown in fig. 5b, the vacuum absorption deformation is PV 0.931 wavelength after the active compensation, which satisfies the requirement of ultra-precision cutting.
The active deformation compensation clamping device for the ultra-precision cutting of the soft and brittle ultrathin crystal can be widely applied to the ultra-precision cutting processing of the scintillation crystal.
The above detailed description is intended to illustrate the objects, aspects and advantages of the present invention, and it should be understood that the above detailed description is only exemplary of the present invention and is not intended to limit the scope of the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
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| JPS5867026A (en) * | 1981-10-19 | 1983-04-21 | Hitachi Ltd | Thin plate metamorphosis device |
| JPS5969926A (en) * | 1982-10-15 | 1984-04-20 | Hitachi Ltd | Exposure method and device |
| US5094536A (en) * | 1990-11-05 | 1992-03-10 | Litel Instruments | Deformable wafer chuck |
| CN102390045A (en) * | 2011-07-01 | 2012-03-28 | 南京航空航天大学 | Grinding tool capable of actively compensating surface shape abrasion errors and compensating method thereof |
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