CN109802296B - Beam shaping structure of edge-emitting laser, laser chip and preparation method of laser chip - Google Patents
Beam shaping structure of edge-emitting laser, laser chip and preparation method of laser chip Download PDFInfo
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- CN109802296B CN109802296B CN201910156461.0A CN201910156461A CN109802296B CN 109802296 B CN109802296 B CN 109802296B CN 201910156461 A CN201910156461 A CN 201910156461A CN 109802296 B CN109802296 B CN 109802296B
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- 238000007493 shaping process Methods 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title abstract description 10
- 238000002161 passivation Methods 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
- 238000001312 dry etching Methods 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 239000007772 electrode material Substances 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 claims description 3
- 238000009616 inductively coupled plasma Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 claims description 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
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Abstract
The invention relates to a beam shaping structure of an edge-emitting laser, a laser chip and a preparation method thereof, belonging to the technical field of semiconductor materials; the edge-emitting laser beam shaping structure, the laser chip and the preparation method thereof are provided, wherein the power density of laser spots is improved, and the beam divergence angle is reduced; the technical proposal is as follows: the beam shaping structure of the edge-emitting laser is a trapezoid table which is sunken in the N-type doped waveguide layer, the active layer and the P-type doped waveguide layer inside the edge-emitting laser chip, the upper bottom surface of the trapezoid table is positioned on the front output cavity surface of the edge-emitting laser chip, and the surface surrounded by the trapezoid table is plated with a Si passivation film and an antireflection film in sequence.
Description
Technical Field
The invention relates to a beam shaping structure of an edge-emitting laser, a laser chip and a preparation method thereof, belonging to the technical field of semiconductor materials.
Background
In terms of improvement of beam quality of semiconductor lasers, the conventional methods mainly include a geometric optical shaping method and a diffractive optical shaping method. At present, the beam shaping method reported at home and abroad mainly comprises the following steps: a cylindrical mirror collimation method, a plane mirror shaping technology, an aspheric micro lens shaping technology, a microchip prism stack shaping method, a diffraction element shaping method and the like. The methods can realize beam shaping, but the methods are all used for carrying out beam shaping on the external design light path of the laser chip, and the external light path shaping method has the advantages of complex light path structure, poor device stability and no increase of the power density of the shaped light beam.
Disclosure of Invention
The invention provides a beam shaping structure of an edge-emitting laser, a laser chip and a preparation method thereof, overcomes the defects existing in the prior art, and provides the beam shaping structure of the edge-emitting laser, the laser chip and the preparation method thereof, wherein the power density of laser spots is improved, and the beam divergence angle is reduced.
In order to solve the technical problems, the invention adopts the following technical scheme: an edge-emitting laser beam shaping structure, characterized in that: the beam shaping structure is a trapezoid table, the trapezoid table is sunken in an N-type doped waveguide layer, an active layer and a P-type doped waveguide layer in the edge-emitting laser chip, the upper bottom surface of the trapezoid table is located on the front output cavity surface of the edge-emitting laser chip, and a Si passivation film and an antireflection film are plated on the surface surrounded by the trapezoid table in sequence.
Further, the length of the upper bottom surface of the trapezoid table is 80-120 μm, the width of the upper bottom surface of the trapezoid table is 1000-1500A, and the depth of the trapezoid table is 1000-5000A.
Further, the thickness of the Si passivation film is 100-200A, and the material of the anti-reflection film is Si/ZnSe or Si/SiO 2 The transmittance is 90 to 95 percent.
The laser chip comprises the beam shaping structure, a substrate, a buffer layer, an N-type doped limiting layer, an N-type doped waveguide layer, an active layer, a P-type doped waveguide layer, a P-type doped limiting layer, a P-type doped top layer and a P-type highly doped electrode contact layer which are sequentially grown on the substrate.
The preparation method of the laser chip comprises the following steps:
s1, cleaning an epitaxial wafer, and sequentially growing a buffer layer, an N-type doped limiting layer, an N-type doped waveguide layer, an active layer, a P-type doped waveguide layer, a P-type doped limiting layer, a P-type doped top layer and a P-type highly doped electrode contact layer on a substrate;
s2, performing photoetching on an epitaxial wafer to form a periodically distributed platform pattern, forming the size and shape of a laser chip, and then etching two sides of a P-type highly-doped electrode contact layer through a photoetching process, wherein an unetched area in the middle forms a P electrode;
s3, performing deep trench etching from etching areas at two sides of the P electrode by adopting inductively coupled plasma dry etching until the depth of the buffer layer is about 40000-50000A, and forming a deep trench;
s4, depositing a layer of SiO (silicon dioxide) in the deep channel by inductively coupled plasma-chemical vapor deposition 2 A dielectric film;
s5, etching a cutting channel with the depth of 55000-60000A on one side of the two deep channels away from the P electrode to the surface of the substrate;
s6, covering a layer of Ti/Pt/Au on the P electrode, taking the Ti/Pt/Au as a P electrode ohmic contact electrode, thinning the thickness of the substrate to 1000000 ～ 1300000A, preparing an N-face electrode material, and evaporating a layer of Au/Ge/Ni and Au with the thickness of 3000-5000A on the N face to form an N electrode ohmic contact electrode;
s7, cleaving the epitaxial wafer into required bars;
s8, coating photoresist on the front cavity surface of the laser chip, and etching a rectangular cavity surface pattern by adopting a nano imprinting technology, wherein the center of a rectangle is positioned on the active layer, and the length and width dimensions of the rectangle are respectively 80-120 mu m and 1000-1500A;
s9, carrying out dry etching along the rectangle by adopting an inductive coupling plasma, wherein the etching depth is about 1000-5000A, and etching the trapezoid table;
s10, cleaning photoresist and SiO in the trapezoid table by adopting photoresist removing liquid and buffer oxide etching liquid 2 A dielectric film;
s11, evaporating a layer of Si passivation film of about 100-200A on the front cavity surface and the rear cavity surface of the laser chip at the temperature of 150-300 ℃ and the growth speed of 1-2A/s;
s12, plating an antireflection film on the front cavity surface of the laser chip, and plating a high reflection film on the rear cavity surface.
Further, in the step S12, the material of the high reflection film is Si/SiO 2 Or Si/Al 2 O 3 The number of the periods is 2-4,the reflectivity is 94-98%.
Compared with the prior art, the invention has the following beneficial effects.
The beam shaping structure of the edge-emitting laser can adjust the propagation direction of the beam in the fast axis direction, so that photons with large divergence angles are reflected on the trapezoid inclined edge, thereby realizing the effect of photon collection of the laser chip, and leading the quality of the laser beam to be higher, the divergence angle to be smaller and the power density to be higher. By adopting the structure, the problems of large divergence angle, large light spot and low power density of the manufactured chip are solved, and the optical path structural design of the external beam shaping of the chip is simplified, so that the divergence angle of the laser chip is improved, the power density of the beam is improved, and the laser chip is suitable for manufacturing high-power and long-service-life laser chips.
Drawings
Fig. 1 is a schematic structural diagram of a laser chip provided by the present invention.
In the figure, a 1-substrate, a 2-buffer layer, a 3-N type doped confinement layer, a 4-N type doped waveguide layer, a 5-active layer, a 6-P type doped waveguide layer, a 7-P type doped confinement layer, an 8-P type doped top layer, a 9-P type highly doped electrode contact layer, a 10-highly reflective film, an 11-Si passivation film, a 12-P electrode, a 13-antireflection film and a 14-trapezoid table.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
As shown in fig. 1, in the beam shaping structure of the edge-emitting laser according to the present invention, the beam shaping structure is a trapezoid table 14, the trapezoid table 14 is recessed in the N-type doped waveguide layer 4, the active layer 5 and the P-type doped waveguide layer 6 inside the edge-emitting laser chip, the upper bottom surface of the trapezoid table 14 is located on the front output cavity surface of the edge-emitting laser chip, and the surface surrounded by the trapezoid table 14 is sequentially plated with a Si passivation film 11 and an antireflection film 13.
The upper bottom surface of the trapezoid table 14 has a length of 80-120 μm, a width of 1000-1500 a, and a depth of 1000-5000 a. The thickness of the Si passivation film 11 is 100-200A, and the material of the anti-reflection film 13 is Si/ZnSe or Si/SiO 2 The transmittance is 90% -95%.
The laser chip comprises the beam shaping structure, a substrate 1, a buffer layer 2, an N-type doped limiting layer 3, an N-type doped waveguide layer 4, an active layer 5, a P-type doped waveguide layer 6, a P-type doped limiting layer 7, a P-type doped top layer 8 and a P-type highly doped electrode contact layer 9 which are sequentially grown on the substrate 1, wherein a Si passivation film 11 and an antireflection film 13 are sequentially plated on the front cavity surface of the laser chip, and a Si passivation film 11 and a high reflection film 10 are sequentially plated on the rear cavity surface of the laser chip.
The N-type doped confinement layer 3 provides electrons and limits light field distribution, the N-type doped waveguide layer 4 and the P-type doped waveguide layer 6 provide photon reflection propagation, the active layer 5 is a light emitting layer, the P-type doped confinement layer 7 provides holes and limits photons to enter epitaxial layers outside the confinement layer, and light loss is reduced. The p-GaAs top layer serves as a current diffusion. The P-type highly doped electrode contact layer 9 is used to form an ohmic contact with the P-electrode 12.
The substrate 1 is made of GaAs, the buffer layer 2, the N-type doped confinement layer 3 and the N-type doped waveguide layer 4 are made of N-GaAs, the P-type doped waveguide layer 6 and the P-type doped confinement layer 7 are made of P-AlGaAs, the P-type doped top layer 8 is made of P-GaAs, and the P-type highly doped electrode contact layer 9 is made of P+ -GaAs.
The preparation method of the laser chip comprises the following steps:
s1, cleaning an epitaxial wafer, and sequentially growing a buffer layer 2, an N-type doped limiting layer 3, an N-type doped waveguide layer 4, an active layer 5, a P-type doped waveguide layer 6, a P-type doped limiting layer 7, a P-type doped top layer 8 and a P-type highly doped electrode contact layer 9 on a substrate 1.
S2, performing photoetching on the epitaxial wafer to form a periodically distributed platform pattern, forming the size and shape of a laser chip, and then etching two sides of the P-type highly-doped electrode contact layer 9 through a photoetching process, wherein the unetched area in the middle forms a P electrode 12.
The etching depth ranges from 1000 a to 13000 a. 1150 a is preferred. The etched area depends on the duty cycle of the laser chip.
S3, performing deep trench etching from the etching areas at two sides of the P electrode 12 by adopting inductively coupled plasma dry etching until the depth of the buffer layer 2 is about 40000-50000A, and forming a deep trench.
S4, depositing a layer of SiO in the deep channel by inductively coupled plasma-chemical vapor deposition (ICP-CVD) 2 A dielectric film.
SiO 2 The dielectric film plays roles of protection and current limiting, and can effectively improve the characteristic parameters of the tube core.
S5, cutting the cutting channel with the depth of 55000-60000A on one side of the two deep channels far away from the P electrode 12 to the surface of the substrate;
the cutting path is plated with passivation layer SiO 2 And the formation of leakage channels after flip-chip packaging is avoided.
S6, covering a layer of Ti/Pt/Au on the P electrode 12 to serve as a P electrode ohmic contact electrode, thinning the thickness of the substrate 1 to 1000000 ～ 1300000A, preparing an N-face electrode material, and evaporating a layer of Au/Ge/Ni and Au with the thickness of 3000-5000A on the N face to form an N electrode ohmic contact electrode.
S7, cleaving the epitaxial wafer into required bars.
A laser bar is a number of chips that are juxtaposed together. To prevent electrical and optical interactions between the chips, for optical and electrical isolation.
S8, coating photoresist on the front cavity surface of the laser chip, and etching a rectangular cavity surface pattern by adopting a nano imprinting technology, wherein the center of the rectangle is positioned on the active layer 5, and the length and width dimensions of the rectangle are respectively 80-120 mu m and 1000-1500A.
S9, carrying out dry etching along the rectangle by adopting an inductive coupling plasma, wherein the etching depth is about 1000-5000A, and etching the trapezoid table 14. The configuration of the trapezoidal stage 14 can change the direction of propagation of the light.
S10, photoresist and SiO in the trapezoid table 14 are cleaned by adopting photoresist removing liquid and buffer oxide etching liquid 2 A dielectric film.
S11, evaporating a layer of Si passivation film 11 with the thickness of about 100-200A on the front cavity surface and the back cavity surface of the laser chip at the temperature of 150-300 ℃ and the growth speed of 1-2A/s;
s12, plating an antireflection film 13 on the front cavity surface of the laser chip and plating a high layer on the rear cavity surfaceA reflective film 10. The material of the high reflection film 10 is Si/SiO 2 Or Si/Al 2 O 3 The cycle number is 2-4, and the reflectivity is 94-98%.
And finally, after the bar preparation is finished, carrying out data testing.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the following claims.
Claims (5)
1. An edge-emitting laser beam shaping structure, characterized in that: the beam shaping structure of the edge-emitting laser adjusts the propagation direction of a beam in the fast axis direction, so that photons with large divergence angles are reflected on trapezoid inclined edges, thereby realizing the effect of photon collection of a laser chip, the beam shaping structure is a trapezoid table (14), the trapezoid table (14) is sunken in an N-type doped waveguide layer (4), an active layer (5) and a P-type doped waveguide layer (6) in the edge-emitting laser chip, the upper bottom surface of the trapezoid table (14) is positioned on the front output cavity surface of the edge-emitting laser chip, and a Si passivation film (11) and an antireflection film (13) are plated on the surface surrounded by the trapezoid table (14) in sequence;
the upper bottom surface of the trapezoid table (14) has a length of 80-120 μm and a width ofThe depth of the trapezoid table (14) is +.>
2. The edge-emitting laser beam shaping structure according to claim 1, the method is characterized in that: the thickness of the Si passivation film (11) isThe material of the anti-reflection film (13) is Si/ZnSe or Si/SiO 2 The transmittance is 90 to the whole95％。
3. A laser chip characterized by comprising the beam shaping structure according to any one of claims 1-2, a substrate (1), a buffer layer (2), an N-type doped confinement layer (3), an N-type doped waveguide layer (4), an active layer (5), a P-type doped waveguide layer (6), a P-type doped confinement layer (7), a P-type doped top layer (8) and a P-type highly doped electrode contact layer (9) which are sequentially grown on the substrate (1), wherein the front cavity surface of the laser chip is sequentially plated with a Si passivation film (11) and an antireflection film (13), and the rear cavity surface is sequentially plated with a Si passivation film (11) and a highly reflective film (10).
4. A method of manufacturing a laser chip according to claim 3, characterized by comprising the steps of:
s1, cleaning an epitaxial wafer, and sequentially growing a buffer layer (2), an N-type doped limiting layer (3), an N-type doped waveguide layer (4), an active layer (5), a P-type doped waveguide layer (6), a P-type doped limiting layer (7), a P-type doped top layer (8) and a P-type highly doped electrode contact layer (9) on a substrate (1);
s2, forming a periodically distributed platform pattern by photoetching an epitaxial wafer to form the size and shape of a laser chip, and then etching two sides of a P-type highly-doped electrode contact layer (9) through a photoetching process, wherein a P electrode (12) is formed in an unetched area in the middle;
s3, performing deep trench etching from etching areas at two sides of the P electrode (12) to the buffer layer (2) by adopting inductively coupled plasma dry etching, wherein the depth is aboutForming a deep channel;
s4, depositing a layer of SiO (silicon dioxide) in the deep channel by inductively coupled plasma-chemical vapor deposition 2 A dielectric film;
s5, etching depth at one side of the two deep channels away from the P electrode (12)To the surface of the substrate；
S6, covering a layer of Ti/Pt/Au on the P electrode (12) as a P electrode ohmic contact electrode, and thinning the thickness of the substrate (1) to be Preparing N-side electrode material, evaporating a layer of material with thickness of +.>And Au, forming an N-pole ohmic contact electrode;
s7, cleaving the epitaxial wafer into required bars;
s8, coating photoresist on the front cavity surface of the laser chip, etching a rectangular cavity surface pattern by adopting a nanoimprint technology, wherein the rectangular center is positioned on the active layer (5), and the length and width dimensions of the rectangular are respectively 80-120 mu m and the width dimension of the rectangular are respectively
S9, adopting inductive coupling plasma dry etching along the rectangle to etch the substrate inwards to the depth of aboutEtching the trapezoid (14);
s10, cleaning photoresist and SiO in the trapezoid table (14) by adopting photoresist removing liquid and buffer oxide etching liquid 2 A dielectric film;
s11, when the temperature is 150-300 ℃, the growth speed isEvaporating a layer of about +_ on the front and back facet of the laser chip>A Si passivation film (11);
s12, plating an antireflection film (13) on the front cavity surface of the laser chip, and plating a high reflection film (10) on the rear cavity surface.
5. The method for manufacturing a laser chip according to claim 4, wherein in the step S12, the highly reflective film (10) is made of Si/SiO 2 Or Si/Al 2 O 3 The cycle number is 2-4, and the reflectivity is 94-98%.
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| CN110694184A (en) * | 2019-10-14 | 2020-01-17 | 深圳大学 | Method, device and storage medium for adjusting laser power density |
| CN111146688A (en) * | 2019-12-24 | 2020-05-12 | 江西德瑞光电技术有限责任公司 | Electric pump vertical external cavity surface emitting laser chip and preparation method thereof |
| CN111082311B (en) * | 2019-12-31 | 2022-04-01 | 中国科学院半导体研究所 | Monolithic manufacturing structure of monolithic photonic integrated device |
| CN111181000B (en) * | 2020-01-21 | 2021-02-26 | 中国科学院理化技术研究所 | Semiconductor chip and semiconductor laser |
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| CN113572004B (en) * | 2021-07-27 | 2022-07-12 | 广东国志激光技术有限公司 | Edge-emitting semiconductor laser coupling optical fiber with specific structure |
| CN115693403A (en) * | 2023-01-05 | 2023-02-03 | 深圳市星汉激光科技股份有限公司 | GaAs FP laser chip and preparation method thereof |
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