CN109802037A - A kind of photodetector and preparation method thereof - Google Patents
A kind of photodetector and preparation method thereof Download PDFInfo
- Publication number
- CN109802037A CN109802037A CN201811610317.1A CN201811610317A CN109802037A CN 109802037 A CN109802037 A CN 109802037A CN 201811610317 A CN201811610317 A CN 201811610317A CN 109802037 A CN109802037 A CN 109802037A
- Authority
- CN
- China
- Prior art keywords
- electrode
- photodetector
- active layer
- bis
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 34
- 230000004048 modification Effects 0.000 claims abstract description 29
- 238000012986 modification Methods 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 8
- 150000002739 metals Chemical class 0.000 claims description 20
- 229910052757 nitrogen Inorganic materials 0.000 claims description 20
- 239000004411 aluminium Substances 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 238000004528 spin coating Methods 0.000 claims description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 150000002220 fluorenes Chemical class 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- LAXBNTIAOJWAOP-UHFFFAOYSA-N 2-chlorobiphenyl Chemical group ClC1=CC=CC=C1C1=CC=CC=C1 LAXBNTIAOJWAOP-UHFFFAOYSA-N 0.000 claims description 6
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 6
- GTBJMCSZXYCQMJ-UHFFFAOYSA-N N-methylmethanamine prop-1-ene Chemical compound CNC.CC=C GTBJMCSZXYCQMJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- 230000008020 evaporation Effects 0.000 claims description 6
- 229910003472 fullerene Inorganic materials 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 6
- RXACYPFGPNTUNV-UHFFFAOYSA-N 9,9-dioctylfluorene Chemical compound C1=CC=C2C(CCCCCCCC)(CCCCCCCC)C3=CC=CC=C3C2=C1 RXACYPFGPNTUNV-UHFFFAOYSA-N 0.000 claims description 5
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000001548 drop coating Methods 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 238000003303 reheating Methods 0.000 claims description 3
- 239000000243 solution Substances 0.000 claims description 3
- BAVYZALUXZFZLV-UHFFFAOYSA-N mono-methylamine Natural products NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims 2
- -1 N, N- DimethylAminopropyl Chemical group 0.000 claims 1
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical group [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 claims 1
- 229930192474 thiophene Natural products 0.000 claims 1
- 230000004044 response Effects 0.000 abstract description 27
- 238000001514 detection method Methods 0.000 abstract description 9
- 230000003595 spectral effect Effects 0.000 abstract description 8
- 230000006378 damage Effects 0.000 abstract description 4
- 230000002457 bidirectional effect Effects 0.000 abstract 1
- 230000009977 dual effect Effects 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000005452 bending Methods 0.000 description 9
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 7
- 238000001228 spectrum Methods 0.000 description 7
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- HQOWCDPFDSRYRO-CDKVKFQUSA-N CCCCCCc1ccc(cc1)C1(c2cc3-c4sc5cc(\C=C6/C(=O)c7ccccc7C6=C(C#N)C#N)sc5c4C(c3cc2-c2sc3cc(C=C4C(=O)c5ccccc5C4=C(C#N)C#N)sc3c12)(c1ccc(CCCCCC)cc1)c1ccc(CCCCCC)cc1)c1ccc(CCCCCC)cc1 Chemical compound CCCCCCc1ccc(cc1)C1(c2cc3-c4sc5cc(\C=C6/C(=O)c7ccccc7C6=C(C#N)C#N)sc5c4C(c3cc2-c2sc3cc(C=C4C(=O)c5ccccc5C4=C(C#N)C#N)sc3c12)(c1ccc(CCCCCC)cc1)c1ccc(CCCCCC)cc1)c1ccc(CCCCCC)cc1 HQOWCDPFDSRYRO-CDKVKFQUSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000013086 organic photovoltaic Methods 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-dichlorobenzene Chemical compound ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 description 1
- QUTGXAIWZAMYEM-UHFFFAOYSA-N 2-cyclopentyloxyethanamine Chemical compound NCCOC1CCCC1 QUTGXAIWZAMYEM-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- OHJMTUPIZMNBFR-UHFFFAOYSA-N biuret Chemical compound NC(=O)NC(N)=O OHJMTUPIZMNBFR-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004992 fission Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Light Receiving Elements (AREA)
Abstract
本申请属于光探测技术领域，特别是涉及一种光电探测器及其制备方法。现有的光电探测器大都只能工作在单一模式下，即只具有单一光谱响应模式，限制了光电探测器的使用范围。此外，传统的光电探测器只能工作在单向偏压下，对其施加正向偏压会使得器件击穿损坏。本申请提供一种光电探测器，包括依次层叠排列的基底、电极、电极修饰层、有源层和半透明金属电极；所述有源层为混合薄膜，所述薄膜包括电子给体材料和电子受体材料。使得在单个器件中集成双向偏压/双入射窗口四种工作模式，且不同工作模式具有不同光谱响应范围，以简单、低成本的制备方法在单个器件中集成四种工作模式，实现窄带及宽带光探测。
The present application belongs to the technical field of light detection, and in particular relates to a photodetector and a preparation method thereof. Most of the existing photodetectors can only work in a single mode, that is, only have a single spectral response mode, which limits the application range of the photodetectors. In addition, conventional photodetectors can only work under a unidirectional bias voltage, and applying a forward bias voltage to them will cause the device to break down and damage. The present application provides a photodetector, comprising a substrate, an electrode, an electrode modification layer, an active layer and a semi-transparent metal electrode arranged in sequence; the active layer is a mixed film, and the film includes an electron donor material and an electron acceptor material. It enables the integration of four working modes of bidirectional bias voltage/dual incident window in a single device, and different working modes have different spectral response ranges, and integrates four working modes in a single device with a simple and low-cost fabrication method to achieve narrow-band and broadband. light detection.
Description
Technical field
The application belongs to optical detector technology field, more particularly to a kind of photodetector and preparation method thereof.
Background technique
Photodetector is a kind of device for converting optical signals to electric signal, it is seen that optical range photodetector at
The fields such as picture, spectral detection, accurate scientific research apparatus, biological monitoring, fluorescent marker, medical image etc. be civilian are widely used.Mesh
Before, the photodetector to have put it into commercial operation is all made of inorganic semiconductor material (such as silicon), these materials are all from rock
Middle exploitation is refined to obtain, this process causes greatly destruction, pollution to environment.Nature largely existing carbon (C), hydrogen
(H), oxygen (O) provides sufficient raw material to synthesize green novel organic semi-conductor material.Since organic semiconducting materials also have
Have the advantages that extinction coefficient it is high, it is at low cost, can be made into large area flexible device so that the research of organic photodetector is by pass
Note.
The working principle of existing organic photodetector is based primarily upon organic photovoltaic effect, i.e. organic semiconducting materials are captureed
It obtains photon and generates exciton, to acceptor interface, exciton is dissociated into exciton diffusion under the driving force effect to acceptor level difference
Free carrier, carrier are collected by electrode, and then generate photogenerated current, realize detection and response to optical signal.Respond model
Enclose be organic photodetector a key parameter.According to the spectral response range of detector, it can be classified as two major classes: one
It is to be capable of the photodetector of a certain wavelength channels of accurately detecting with narrow band light detectivity；Second is that having broadband light to visit
Survey ability from the broadband of ultraviolet, visible near-infrared, it can be achieved that detect.Due to by material extinction coefficient, exciton fission efficiency,
The external quantum efficiency of the influence of carrier transport and collection efficiency, this kind of photodetector is both less than 100%, for dim light or surpasses
The responsiveness of weak light detection, device is just restricted.
Existing photodetector mostly can only operate under single-mode, i.e., only has single spectral response mode, light
It is non-adjustable to compose response range, limits the use scope of photodetector.In addition, traditional photodetector can only operate in list
To under bias, applying forward bias to it can make device breakdown damage.
Summary of the invention
1. technical problems to be solved
It mostly can only operate under single-mode based on existing photodetector, i.e., only there is single spectral response mould
Formula, spectral response range is non-adjustable, limits the use scope of photodetector.In addition, traditional photodetector can only work
Make under unidirectional bias, applies the problem of forward bias can make device breakdown damage to it, this application provides a kind of photoelectricity
Detector and preparation method thereof.
2. technical solution
To achieve the above object, this application provides a kind of photodetector, including stack gradually arrangement substrate,
Electrode, electrode modification layer, active layer and semi-transparent metals electrode；
The active layer is mixed film, and the film includes electron donor material and electron acceptor material.
Optionally, the film thickness is 0.2~5.0 micron, the electron donor material and the electron acceptor material
Weight ratio be 5:1~200:1, the electron donor material be poly- 3- hexyl thiophene (P3HT) or quasi polymer (PBDT-
TS1), the electron acceptor material be fullerene derivate (PCBM, ICBA) or non-fullerene acceptor (DC-IDT2T,
ITIC)。
Optionally, the substrate is glass, and the electrode is tin indium oxide, and the electrode modification layer is [N, N '-bis- (third
Alkene dimethylamine) -3,4:9,10- imidodicarbonic diamide] (PDIN) or [9,9- dioctyl fluorene -9,9- bis- (N, N- DimethylAminopropyls)
Fluorenes] (PFN), the semi-transparent metals electrode is aluminium, silver or gold.
Optionally, for the electrode modification layer with a thickness of 20~40 nanometers, the semi-transparent metals thickness of electrode is 10~30
Nanometer.
The application also provides a kind of photodetector preparation method, and described method includes following steps:
Step 1: electrode is set in substrate；
Step 2: electrode modification layer is set on the electrodes；
Step 3: active layer is set on the electrode modification layer；
Step 4: semi-transparent metals electrode is set on the active layer.
Optionally, the step 3 includes by electron donor material and electron acceptor material according to weight ratio 5:1~200:1
It is dissolved in adjacent chlorodiphenyl, is prepared into mixed solution, by the uniform spin coating of the mixed solution or drop coating on the electrode modification layer,
Reheating makes adjacent chlorodiphenyl volatilize rapidly, prepares 0.2~5.0 micron of active layer 4.
Optionally, the heating temperature is 70~120 DEG C.
Optionally, the step 1 include by tin indium oxide plating on the substrate, be then soaked in respectively deionized water,
In dehydrated alcohol, then cleaned with ultrasonic washing instrument；With being dried with nitrogen after cleaning up, then handled with plasma cleaning instrument
1min。
Optionally, the step 2 includes [N, N '-bis- (propylene dimethylamine) -3,4:9, the 10- of spin coating on the electrodes
Imidodicarbonic diamide] (PDIN) or [bis- (N, the N- DimethylAminopropyl) fluorenes of 9,9- dioctyl fluorene -9,9-] (PFN).
Optionally, the step 4 includes being put into sample obtained in the step 3 to be equipped with aluminium ingot, silver ingot or ingot
Vacuum chamber in, heating aluminium ingot, silver ingot or ingot make its evaporation.
3. beneficial effect
Compared with prior art, a kind of beneficial effect of photodetector provided by the present application and preparation method thereof is:
Photodetector provided by the present application, by the substrate, the electrode, electrode modification layer, active layer that stack gradually arrangement
With semi-transparent metals electrode；Wherein active layer is mixed film made of electron donor material and electron acceptor material, so that
Integrated bi-directional bias/four kinds of bis- incident windows operating mode in individual devices, and different working modes have different spectral responses
Range has widened the application range of photodetector.Four kinds of works are integrated in individual devices with simple, inexpensive preparation method
Operation mode, realizes narrowband and broadband optical detection, and the full width at half maximum of the narrowband response is less than 50 nanometers, the broadband response
Full width at half maximum is greater than 260 nanometers, and has photomultiplier transit response, i.e. external quantum efficiency is greater than 100%.
Detailed description of the invention
Fig. 1 is a kind of photodetector structure schematic diagram of the application；
Fig. 2 is the photodetector of the application under Biaxial bending/bis- incident windows light current curve and Biaxial bending
Dark current curve；
Fig. 3 is the photodetector of 0.3 micron of active layer of the application in Biaxial bending/four kinds of bis- incident windows Working mould
External quantum efficiency spectra curve under formula；
Fig. 4 is the photodetector of the different-thickness active layer of the application in Biaxial bending/four kinds of bis- incident windows work
External quantum efficiency spectra curve under mode；
Fig. 5 is the photodetector of 3.6 microns of active layers of the application in Biaxial bending/four kinds of bis- incident windows Working mould
External quantum efficiency spectra curve under formula；
In figure: 1- substrate, 2- electrode, 3- electrode modification layer, 4- active layer, 5- semi-transparent metals electrode.
Specific embodiment
Hereinafter, specific embodiment of the reference attached drawing to the application is described in detail, it is detailed according to these
Description, one of ordinary skill in the art can implement the application it can be clearly understood that the application.Without prejudice to the application principle
In the case where, the feature in each different embodiment can be combined to obtain new embodiment, or be substituted certain
Certain features in embodiment, obtain other preferred embodiments.
Detector in practical applications based on organic photovoltaic effect must amplify system using complicated, expensive current operator
System extract useful information from noise.Photomultiplier transit response is introduced into organic photodetector then can be greatly
The responsiveness and signal-to-noise ratio of device are improved, realizes the sensitive detection to dim light.
Referring to Fig. 1~5, the application provides a kind of photodetector, it is characterised in that: the substrate including stacking gradually arrangement
1, electrode 2, electrode modification layer 3, active layer 4 and semi-transparent metals electrode 5；
The active layer 4 is mixed film, and the film includes electron donor material and electron acceptor material.
Here substrate 1 is transparent substrates, and electrode 2 is transparent electrode, which is arranged in the transparent substrates,
It is provided with electrode modification layer 3 in the transparent electrode, active layer 4 is set on the electrode modification layer 3, is arranged on the active layer 4
Semi-transparent metals electrode 5.
Further, the active layer 4 is with a thickness of 0.2~5.0 micron, the electron donor material and the electron acceptor
The weight ratio of material is 5:1~200:1, and the electron donor material is poly- 3- hexyl thiophene (P3HT) or quasi polymer
(PBDT-TS1), the electron acceptor material is fullerene derivate (PCBM, ICBA) or non-fullerene acceptor (DC-
IDT2T,ITIC).The active layer 4, which absorbs a photon, can cause many carriers to flow through device, to obtain biggish
Photoelectric current, working mechanism are as follows: a small amount of electron acceptor forms discontinuous trap and trapped electron in active layer, near interface
Trapped electron forms coulomb electric field and induces interface band curvature, and then enhances tunneling injection of the hole from external circuit, from
And photomultiplier transit response is obtained, thus device has the external quantum efficiency greater than 100%.
Further, the substrate 1 is glass, and the electrode 2 is tin indium oxide (ITO), and the electrode modification layer 3 is
[N, N '-bis- (propylene dimethylamine) -3,4:9,10- imidodicarbonic diamide] (PDIN) or [bis- (N, N- bis- of 9,9- dioctyl fluorene -9,9-
Methyl amine propyl) fluorenes] (PFN), the semi-transparent metals electrode 5 is aluminium, silver or gold；It can be made using semi-transparent metals electrode 5
The photodetector has double incident windows.
Further, the electrode modification layer 3 is with a thickness of 20~40 nanometers, and the semi-transparent metals electrode 5 is with a thickness of 10
~30 nanometers.
Semi-transparent metals electrode 5 is preferably aluminium (Al), and thickness is preferably 16 nanometers；4 thickness of active layer is preferably 0.3 micron
With 3.6 microns.
Photodetector preparation method, described method includes following steps:
Step 1: electrode 2 is set on the base 1；
Step 2: electrode modification layer 3 is set on the electrode 2；
Step 3: active layer 4 is set on the electrode modification layer 3；
Step 4: semi-transparent metals electrode 5 is set on the active layer 4.
Further, the step 3 includes by electron donor material and electron acceptor material according to weight ratio 5:1~200:
1 is dissolved in adjacent chlorodiphenyl, is prepared into mixed solution, by the uniform spin coating of the mixed solution or drop coating in the electrode modification layer 3
On, reheating makes adjacent chlorodiphenyl volatilize rapidly, prepares 0.2~5.0 micron of active layer 4.Here preferred 100:1.
Further, the heating temperature is 70~120 DEG C.
Further, the step 1 includes being plated in tin indium oxide in the substrate 1, is then soaked in deionization respectively
In water, dehydrated alcohol, then cleaned with ultrasonic washing instrument；With being dried with nitrogen after cleaning up, then handled with plasma cleaning instrument
1min。
Further, the step 2 includes spin coating [N, N '-bis- (propylene dimethylamine) -3,4:9, the 10- on the electrode 2
Imidodicarbonic diamide] or [bis- (N, the N- DimethylAminopropyl) fluorenes of 9,9- dioctyl fluorene -9,9-].Wherein spin coating rate be 2000 turns/
Point, spin-coating time 35s, [N, N '-bis- (propylene dimethylamine) -3,4:9,10- imidodicarbonic diamide] (PDIN) or [9,9- dioctyls
Bis- (N, the N- DimethylAminopropyl) fluorenes of fluorenes -9,9-] (PFN) dosage be 60 microlitres.
Further, the step 4 includes being put into sample obtained in the step 3 to be equipped with aluminium ingot, silver ingot or gold
In the vacuum chamber of ingot, heating aluminium ingot, silver ingot or ingot make its evaporation.The pressure of vacuum chamber is lower than 1 × 10-4Pa；Evaporation rate is about
For 0.2 nm/sec, evaporation thickness is 10~30 nanometers.
Embodiment 1
A kind of photodetector, comprising: substrate 1, electrode 2, electrode modification layer 3, active layer 4 and semi-transparent metals electrode
5, as shown in Figure 1.
The substrate 1 is glass；The electrode 2 is ITO；The electrode modification layer 3 is PDIN or PFN；The active layer 4
The P3HT and PCBM mixed film for being 100:1 for mass ratio, with a thickness of 0.3 micron；The semi-transparent metals electrode 5 is aluminium (Al)
Electrode, with a thickness of 16 nanometers.
Above-mentioned organic photodetector preparation method the following steps are included:
Step 1: preparing transparent electrode ITO in substrate of glass, be then soaked in deionized water respectively, in dehydrated alcohol, use
Ultrasonic washing instrument cleaning；With being dried with nitrogen after cleaning up, dry substrate plasma cleaning instrument is handled into 1min, is improved
The cleannes of substrate surface and the work function on the surface ITO.
Step 2: what is be disposed in step 1 is coated with spin coating PDIN or PFN in the glass substrate of ITO, and spin coating rate is
2000 revs/min, spin-coating time 35 seconds, PDIN or PFN dosage was 60 microlitres.
Step 3: P3HT and PCBM being dissolved in o-DCB according to weight ratio 100:1, is prepared into the mixing of 40 mg/mls
Solution takes 40 microlitres of mixed solution to be uniformly spin-coated on electrode modification layer PDIN or PFN, substrate is then transferred to 100 and is taken the photograph
So that the solvent in film is quickly volatilized on the heating platform of family name's degree, is prepared into 0.3 micron of thick mixed film.
Step 4: the sample in step 3 being put into vacuum chamber, vacuum chamber is vacuumized, pressure in vacuum chamber is made to be lower than 1
×10-4Pa.Aluminium ingot is heated, aluminium ingot is evaporated, evaporation rate is 0.2 nm/sec, is evaporated with a thickness of 16 nanometers, obtains having four
The multiplication type organic photodetector of kind operating mode.
According to the method for embodiment 1, it is semi-transparent for active layer, 16 nanometer thickness to be based on 0.3 micron of thickness P3HT:PCBM (100:1)
Dark current of the organic photodetector of bright aluminium electrode under Biaxial bending/bis- incident windows light current curve and Biaxial bending
Curve, as shown in Fig. 2, under 10 volts and -10 volt biass, dark current density is respectively 0.000379 milliamps per square centimeter,
0.000286 milliamps per square centimeter；Under 10 volts of biass, the light current density in the case of bottom incidence (side ITO) is 3.59 millis
Peace/square centimeter, the light current density headed into the case of penetrating (side Al) are 0.055 milliamps per square centimeter；In -10 volt biass
Under, the light current density in the case of incident (side ITO) is 0.39 milliamps per square centimeter, heads into and penetrates in the case of (side Al)
Light current density is 0.089 milliamps per square centimeter.
According to the method for embodiment 1, it is semi-transparent for active layer 4,16 nanometer thickness to be based on 0.3 micron of thickness P3HT:PCBM (100:1)
External quantum efficiency spectra of the organic photodetector of bright aluminium electrode under Biaxial bending/four kinds of bis- incident windows operating mode is bent
Line；A, bottom incidence/forward bias；B, bottom incidence/reverse biased；C, it heads into and penetrates/forward bias；D, it heads into and penetrates/reverse biased, institute
Stating bias size is 10 volts, as described in Figure 3, under the conditions of mode 1, i.e., under bottom incidence/forward bias, in 300~700 nanometers of models
Interior appearance band response is enclosed, the full width at half maximum of response is greater than 300 nanometers；Under the conditions of mode 2, i.e., under bottom incidence/reverse biased,
320~490 nanometers and 550~700 nanometers appearance peak, and a recess is formed between Liang Feng；Under the conditions of mode 3, i.e.,
Head into penetrate/forward bias under, the shape of response spectrum is similar with mode 2, and external quantum efficiency is lower than mode 2, but is still greater than
100%；Under the conditions of mode 4, that is, head into penetrate/reverse biased under, the shape of response spectrum is similar with mode 1, external quantum efficiency
It is lower than mode 2, but it is still greater than 100%.
Embodiment 2
4 thickness of active layer in embodiment 1 is respectively set to 1.8 microns, 2.4 microns, 3.0 microns and 3.6 microns,
External quantum efficiency spectra of the photodetector under Biaxial bending/four kinds of bis- incident windows operating mode with active layer thickness pass
System, the bias size is 20 volts, as shown in figure 4, in mode 1, i.e. bottom incidence/forward bias and mode 4, that is, head into penetrate/it is anti-
To under bias condition, external quantum efficiency reduces with the increase of active layer thickness, and the organic photoelectric detection in the case of two kinds
All there are two narrowband responses of U-typed in device；In mode 2, i.e. bottom incidence/reverse biased and mode 3, that is, heads into and penetrate/forward bias
Under the conditions of pressure, external quantum efficiency reduces with the increase of active layer thickness, and the response of organic photodetector is by double narrowbands
Response becomes single narrowband response.
3.6 microns are set by 4 thickness of active layer in embodiment 1, as shown in figure 5, having with the increase of institute's biasing
The external quantum efficiency of machine photodetector dramatically increases；Under 50 volts, mode 1 is in 310~400 nanometers and 600~700 nanometers
Occurs the narrowband response that full width at half maximum is 31 nanometers and 33 nanometers respectively, mode 4 is in 300~400 nanometers and 600~700 nanometers
There is the narrowband response that full width at half maximum is 37 nanometers and 45 nanometers respectively in place, and mode 2 half Gao Quan occurs in 610~700 nanometers
There is the narrowband response that full width at half maximum is 36 nanometers in 610~700 nanometers in the narrowband response that width is 30 nanometers, mode 3.
Photodetector provided by the present application, by the substrate, the electrode, electrode modification layer, active layer that stack gradually arrangement
With semi-transparent metals electrode；Wherein active layer is mixed film made of electron donor material and electron acceptor material, so that
Integrated bi-directional bias/four kinds of bis- incident windows operating mode in individual devices realizes narrowband and broadband optical detection, with simple, low
The preparation method of cost integrates four kinds of operating modes in individual devices, realizes narrowband and broadband optical detection.And the narrowband is rung
For the full width at half maximum answered less than 50 nanometers, the full width at half maximum of the broadband response is greater than 260 nanometers, and there is photomultiplier transit to ring
It answers, i.e., external quantum efficiency is greater than 100%.
Although the application is described above by referring to specific embodiment, one of ordinary skill in the art are answered
Work as understanding, in principle disclosed in the present application and range, many modifications can be made for configuration disclosed in the present application and details.
The protection scope of the application is determined by the attached claims, and claim is intended to technical characteristic in claim
Equivalent literal meaning or range whole modifications for being included.
Claims (10)
1. a kind of photodetector, it is characterised in that: substrate, electrode, electrode modification layer, active layer including stacking gradually arrangement
With semi-transparent metals electrode；
The active layer is mixed film, and the film includes electron donor material and electron acceptor material.
2. photodetector as described in claim 1, it is characterised in that: the active layer is with a thickness of 0.2~5.0 micron, institute
The weight ratio for stating electron donor material and the electron acceptor material is 5:1~200:1, the electron donor material be poly- 3- oneself
Perhaps the quasi polymer electron acceptor material is fullerene derivate or non-fullerene acceptor to base thiophene.
3. photodetector as described in claim 1, it is characterised in that: the substrate is glass, and the electrode is indium oxide
Tin, the electrode modification layer are [N, N '-bis- (propylene dimethylamine) -3,4:9,10- imidodicarbonic diamide] or [9,9- dioctyl fluorenes -
9,9- bis- (N, N- DimethylAminopropyl) fluorenes], the semi-transparent metals electrode is aluminium, silver or gold.
4. photodetector according to any one of claims 1 to 3, it is characterised in that: the electrode modification layer with a thickness of
20~40 nanometers, the semi-transparent metals thickness of electrode is 10~30 nanometers.
5. a kind of photodetector preparation method, it is characterised in that: described method includes following steps:
Step 1: electrode is set in substrate；
Step 2: electrode modification layer is set on the electrodes；
Step 3: active layer is set on the electrode modification layer；
Step 4: semi-transparent metals electrode is set on the active layer.
6. photodetector preparation method as claimed in claim 5, it is characterised in that: the step 3 includes by electron donor
Material and electron acceptor material are dissolved in adjacent chlorodiphenyl according to weight ratio 5:1~200:1, are prepared into mixed solution, will be described mixed
The uniform spin coating of solution or drop coating are closed on the electrode modification layer, reheating makes adjacent chlorodiphenyl volatilize rapidly, prepare 0.2~
5.0 microns of active layer.
7. photodetector preparation method as claimed in claim 6, it is characterised in that: the heating temperature is 70~120 DEG C.
8. photodetector preparation method as claimed in claim 5, it is characterised in that: the step 1 includes by tin indium oxide
Plating on the substrate, is then soaked in deionized water, in dehydrated alcohol, then cleaned with ultrasonic washing instrument respectively；Cleaning is dry
With being dried with nitrogen after net, then with plasma cleaning instrument processing 1min.
9. photodetector preparation method as claimed in claim 5, it is characterised in that: the step 2 is included in the electrode
Upper spin coating [N, N '-bis- (propylene dimethylamine) -3,4:9,10- imidodicarbonic diamide] or [bis- (N, the N- bis- of 9,9- dioctyl fluorene -9,9-
Methyl amine propyl) fluorenes].
10. photodetector preparation method as claimed in claim 5, it is characterised in that: the step 4 includes by the step
Sample obtained in 3 is put into the vacuum chamber for being equipped with aluminium ingot, silver ingot or ingot, and heating aluminium ingot, silver ingot or ingot make its evaporation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811610317.1A CN109802037A (en) | 2018-12-27 | 2018-12-27 | A kind of photodetector and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811610317.1A CN109802037A (en) | 2018-12-27 | 2018-12-27 | A kind of photodetector and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109802037A true CN109802037A (en) | 2019-05-24 |
Family
ID=66557610
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811610317.1A Pending CN109802037A (en) | 2018-12-27 | 2018-12-27 | A kind of photodetector and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109802037A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110364626A (en) * | 2019-06-28 | 2019-10-22 | 北京交通大学 | A kind of narrow-band photodetector and its preparation method |
| CN112271259A (en) * | 2020-10-29 | 2021-01-26 | 电子科技大学 | A flexible multiplied organic photodetector and preparation method thereof |
| CN113130761A (en) * | 2021-03-19 | 2021-07-16 | 太原理工大学 | Organic photomultiplier with bidirectional bias response and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105121393A (en) * | 2013-04-22 | 2015-12-02 | 默克专利有限公司 | Improved fullerene derivatives and related materials, methods and devices |
| CN106025070A (en) * | 2016-05-24 | 2016-10-12 | 北京交通大学 | Photomultiplier organic light detector with spectral selectivity and preparation method of photomultiplier organic light detector |
| CN107591484A (en) * | 2017-09-01 | 2018-01-16 | 北京交通大学 | It is a kind of to have arrowband and the multiplication type organic photodetector of broadband light detectivity concurrently |
-
2018
- 2018-12-27 CN CN201811610317.1A patent/CN109802037A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105121393A (en) * | 2013-04-22 | 2015-12-02 | 默克专利有限公司 | Improved fullerene derivatives and related materials, methods and devices |
| CN106025070A (en) * | 2016-05-24 | 2016-10-12 | 北京交通大学 | Photomultiplier organic light detector with spectral selectivity and preparation method of photomultiplier organic light detector |
| CN107591484A (en) * | 2017-09-01 | 2018-01-16 | 北京交通大学 | It is a kind of to have arrowband and the multiplication type organic photodetector of broadband light detectivity concurrently |
Non-Patent Citations (2)
| Title |
|---|
| JIANLI MIAO等: "Photomultiplication type narrowband organic photodetectors working at forward and reverse bias", 《PHYS. CHEM. CHEM. PHYS.》 * |
| WENBIN WANG等: "Highly Narrowband Photomultiplication Type Organic Photodetectors", 《NANO LETTERS》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110364626A (en) * | 2019-06-28 | 2019-10-22 | 北京交通大学 | A kind of narrow-band photodetector and its preparation method |
| CN110364626B (en) * | 2019-06-28 | 2020-12-01 | 北京交通大学 | Narrowband photodetector and method of making the same |
| CN112271259A (en) * | 2020-10-29 | 2021-01-26 | 电子科技大学 | A flexible multiplied organic photodetector and preparation method thereof |
| CN113130761A (en) * | 2021-03-19 | 2021-07-16 | 太原理工大学 | Organic photomultiplier with bidirectional bias response and preparation method thereof |
| CN113130761B (en) * | 2021-03-19 | 2022-04-19 | 太原理工大学 | Organic photomultiplier with bidirectional bias response and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107591484B (en) | A kind of multiplication type organic photodetector having both narrowband and broadband light detectivity | |
| Wang et al. | Highly narrowband photomultiplication type organic photodetectors | |
| Pal et al. | High‐Sensitivity p–n Junction Photodiodes Based on PbS Nanocrystal Quantum Dots | |
| CN107316943B (en) | Broadband photodetector based on lead iodine cesium formamidine thin film and preparation method thereof | |
| Arca et al. | Interface trap states in organic photodiodes | |
| CN111029462B (en) | Multimode photoelectric detector and manufacturing method thereof | |
| CN101345291B (en) | Organic polymer thin film ultraviolet detector and preparation method thereof | |
| CN106025070B (en) | Photomultiplier transit type organic photodetector with spectral selection and preparation method thereof | |
| CN109935699B (en) | Multiplication type organic photoelectric detector and preparation method thereof | |
| CN105742395B (en) | Upconversion device and photodetector with gain (EC) | |
| Wang et al. | High spectrum selectivity organic/inorganic hybrid visible-blind ultraviolet photodetector based on ZnO nanorods | |
| Oliveira et al. | Indirect X-ray detectors based on inkjet-printed photodetectors with a screen-printed scintillator layer | |
| CN109802037A (en) | A kind of photodetector and preparation method thereof | |
| JP2008103670A (en) | Organic thin film photodetector, manufacturing method thereof, organic thin film light receiving/emitting element, manufacturing method thereof, and pulse sensor | |
| CN103311439B (en) | Thin film photoconductive detector and manufacturing method and application thereof | |
| Li et al. | Wavelength‐Selective Near‐Infrared Organic Upconversion Detectors for Miniaturized Light Detection and Visualization | |
| CN109830608A (en) | A kind of organic photodetector and preparation method thereof | |
| Amin et al. | Fabrication of organic-inorganic hybrid device for optoelectronic applications: charge carriers dynamics and photoresponse assessment | |
| CN109360892A (en) | A visible-near-infrared wide-spectrum detection device using high-response perovskite/polymer hybrid film and its preparation method | |
| Wang et al. | Surface state induced filterless SWIR narrow-band Si photodetector | |
| CN113066931B (en) | spiro-MeOTAD/Ga2O3/Si p-i-n solar-blind UV detector and preparation method thereof | |
| CN102386335A (en) | All-band reverse optical detector constructed on basis of organic small molecular material | |
| Gao et al. | Hybrid Interfacial Engineering: An Enabling Strategy for Highly Sensitive and Stable Perovskite Quantum Dots/Organic Heterojunction Phototransistors | |
| CN103794726B (en) | Thin film organic optical detector of PIN structure and preparation method and application thereof | |
| CN109888102B (en) | Solar blind area deep ultraviolet light detector based on organic field effect transistor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190524 |
|
| RJ01 | Rejection of invention patent application after publication |