CN109801830A - A kind of vacuum channel transistor and preparation method thereof - Google Patents
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Abstract
The invention discloses a kind of vacuum channel transistors and preparation method thereof.The transistor successively includes anode, the first insulating layer, grid, second insulating layer and photocathode, wherein being formed with vacuum channel between the anode and photocathode.Transistor provided by the invention is provided with vacuum channel, so that electron-transport is apart from extremely short, the transistor has higher carrier mobility and carrier mean free path, while making electronics that influence of the electron energy scattering to device thermal stability in solid state device be not present in vacuum channel.
Description
Technical field
The present invention relates to electrovacuum component fields.More particularly, to a kind of vacuum channel transistor and its preparation side
Method.
Background technique
As the IC chip of hyundai electronics Information Technology Foundation, Component units are silicon base CMOS field effect transistor
Pipe, has the characteristics that function is strong, low in energy consumption, speed is fast and at low cost by the IC chip that CMOS is formed.Initial tens
Nian Zhong, integrated circuit follow Moore's Law substantially, i.e., the number that component can be accommodated on each 18~24 months integrated circuits increases
It doubles, performance is also deducted a percentage one times, but is limited since processing technology relatively lags behind with device physics after entering 21 century, silicon
The development of base CMOS transistor will reach its physics limit.Intel Company announces within 2015, abandons silicon in 7nm technology node,
Other channels are found instead of material, develop new semiconductor integrated circuit technology, related semiconductor material include GaAs,
The materials such as InP, SiC, AlN, Nano diamond, carbon nanotube, graphite.Although these materials carrier mobility with higher
With normal carrier mean free path, but the reason of be limited to micro Process compatibility and convenience, there is no any one to take
Become the leading material of semiconductor devices for silicon.Carrier will necessarily meet with ceaselessly lattice collisions when transmitting in solid-state material
And scattering, so that ballistic transport is destroyed, so the structure and working principle of solid-state devices determine it on power and frequency
Development is limited.
Electronics is transmitted without lattice scattering in a vacuum, and transmission rate theoretically can reach 3 × 1010Cm/s, and partly lead
Transmission rate in body only has 3 × 107Cm/s, therefore compared with semiconductor transistor, the carrier transport of radio tube is special
Property there is great superiority, but since vacuum electron device is seriously hampered by backward manufacturing process, so vacuum tube is deposited
Volume is larger, operating temperature is high, switch low-response and is difficult to the disadvantages of integrated.With micro-processing technology and vacuum electron device system
Standby technology develops, and is applied to the micro-processing technology to prepare vacuum electron device and has become possibility, the vacuum channel transistor of preparation
Has the characteristics that speed height and anti-radiation.Minimum additionally, due to its characteristic size, electron-transport, theoretically can be with apart from extremely short
Without the high vacuum seal of traditional vacuum device, electronics collision less transport is realized in low vacuum even atmospheric condition environment, is had
Preferable comprehensive advantage.
When in the early 1960s, present micrometer-nanometer processing technology not yet occurs, Stanford Research Institute, the U.S. is mentioned
Switching speed is gone out 10-10The micron order size vacuum tunnel-effect device concept of s magnitude, based on micro vacuum device
Develop vacuum integrated circuit.Nineteen sixty-eight Spindt is developed micro- based on Mo and Si using top-down semiconductor microactuator processing method
The field emission cathode array of pointed cone, so that micro vacuum triode becomes possibility, vacuum electron device enters " micro- since then
Receive " epoch.Vacuum integrated circuit is successfully had developed within 1985, in 1mm2Area in manufactured 10000 micro vacuum tubes.
The Han etc. of NASA Ames Lab in 2012 proposes the concept of nano vacuum channel triode, utilizes optical lithography and ion
Body incinerator technology prepares the air duct triode cutoff frequency with insulator separation grid structure and is up to 0.46THz, simultaneously
A series of work of subsequent nano vacuum channel triodes is led.The implementation method of nanoscale vacuum channel transistor includes
Two-dimensional electron gas transmitting and low-dimensional carbon material thermionic emission in field emission, Schottky diode etc..
But solid-state transistor in the prior art causes it on power and frequency due to its structure and working principle
Development is limited, and carrier mobility and carrier mean free path are lower, it is difficult to improve；And vacuum channel transistor
Modulator approach and on-off ratio are single, are unfavorable for controlling.In addition, existing vacuum channel transistor that there is also response speeds is relatively slow,
The problems such as emission is small is only used in the vacuum device for working in weak current, and powerful vacuum device is also unable to satisfy
The requirement of part.
In order to overcome technological deficiency of the existing technology, it is desirable to provide a kind of novel vacuum channel transistor and its system
Preparation Method.
Summary of the invention
One of the objects of the present invention is to provide a kind of vacuum channel transistors and preparation method thereof.
In order to achieve the above objectives, the present invention provides a kind of vacuum channel transistor, which successively includes anode, first
Insulating layer, grid, second insulating layer and photocathode, wherein being formed with vacuum channel between the anode and photocathode.
Preferably, the vacuum channel is through first insulating layer, grid layer and second insulating layer setting.
Preferably, the anode is conductive material or semiconductor material；Preferably, anode material is Si or Al；Preferably,
Anode thickness is 300 μm~2mm.
Preferably, the grid is conductive material；Preferably, grid material Si, Al and Mo；Preferably, gate
For 10nm~10 μm.
Preferably, the photocathode includes the photocathode film of cathode substrate and formation on substrate, the photoelectricity
The material of cathode is GaN photocathode, GaAs photocathode, bialkali photocathode or multialkali photocathode.
Preferably, the photocathode film with a thickness of 40nm~3 μm.
Preferably, the vacuum channel is cylinder vacuum channel, and preferably diameter is 40nm~15 μm；Or the vacuum ditch
Road is square column type vacuum channel, and preferably side length is 40nm~15 μm.
According to another aspect of the present invention, a kind of vacuum channel transistor array is provided, wherein each transistor is as above
The vacuum channel transistor.
In accordance with a further aspect of the present invention, a kind of preparation method of vacuum channel transistor is provided, this method includes following
Step:
Anode material is provided；
The first insulating layer is formed in anode surface；
Grid layer is formed on the first insulating layer；
Second insulating layer is formed on the grid layer；
The second insulating layer, grid layer and first are sequentially etched absolutely using photoetching process or ion beam focusing etching technics
Edge layer is to the anode surface；
Photocathode is provided, photocathode is conformed into resulting structures surface, obtains having the photocathode of vacuum channel brilliant
Body pipe.
Preferably, this method further comprises activating to the photocathode of the transistor.
Beneficial effects of the present invention are as follows:
1, the present invention provides a kind of vacuum channel transistor, and the transistor has higher carrier mobility and current-carrying
Sub- mean free path, there is no electron energy scatterings in solid state device to the shadow of device thermal stability in vacuum channel for electronics
It rings, transistor has high thermal stability.
2, the present invention is using photocathode as the cathode of transistor, and the working condition of transistor is in addition to can be by being applied to
Outside grid impulse on grid is controlled, it can also lead to the intensity for adjusting light source and pulse frequency is modulated, than being based on
Spindt cathode, graphite is dilute and the cold cathode vacuum channel transistor of the materials such as silicon has more modulator approaches.
3, photocathode has the characteristics that dark current is small, so that the vacuum channel transistor with photocathode is with higher
On-off ratio.
4, the response time of photocathode can reach femtosecond magnitude, and working frequency can reach Terahertz frequency, the present invention
Vacuum channel transistor based on photocathode can possess higher working frequency limit than other kinds of transistor, be a kind of
High performance vacuum electron device
Detailed description of the invention
Specific embodiments of the present invention will be described in further detail with reference to the accompanying drawing.
Fig. 1 is the vacuum channel transistor working principle figure of photocathode according to the present invention；
Fig. 2 is the structural schematic diagram according to the vacuum channel transistor of the photocathode of the preferred embodiment of the present invention；
Fig. 3 is the vacuum channel transistor gate voltage of present example 1 and the relation curve of anode current；
Fig. 4 is the vacuum channel transistor gate voltage of present example 2 and the relation curve of anode current.
Specific embodiment
In order to illustrate more clearly of the present invention, the present invention is done further below with reference to preferred embodiments and drawings
It is bright.Similar component is indicated in attached drawing with identical appended drawing reference.It will be appreciated by those skilled in the art that institute is specific below
The content of description is illustrative and be not restrictive, and should not be limited the scope of the invention with this.
In following description given, for purposes of illustration, in order to provide comprehensive reason to one or more embodiment
Solution, numerous specific details are set forth.It will, however, be evident that these implementations can also be realized without these specific details
Mode.
Fig. 1 shows the vacuum channel transistor working principle according to the preferred embodiment of the invention based on photocathode.Very
Empty channel transistor includes anode 1, grid 2 and photocathode 3.Photocathode is according to the cathode signal applied on it and enters
It is mapped to the intensity and frequency of the incident light hv on cathode, launching electronics e, electronics reaches anode under the action of grid signal.Light
Electric cathode is a kind of excitation of light and generates the cathode of electron emission, mostly semiconductor material, is operable under room temperature, tool
Have the advantages that quantum efficiency is high, emitted electron energy is concentrated, fast response time and dark current are small.The higher photoelectricity yin of quantum efficiency
Pole is for example including GaAs photocathode, AlGaAs photocathode, GaN photocathode, AlGaN photocathode, InGaAs photoelectricity yin
Pole, CsTe photocathode, Cs3Sb photocathode, CsNa2KSb photocathode, Na2KSb photocathode and K2CsSb photocathode
Deng.The response time of photocathode can reach femtosecond magnitude, so the limit of photocathode differentiates frequency and can reach Terahertz frequency
Rate is much higher than solid crystals tube device and field emission vacuum channel transistor.The photocathode of semiconductor material can use micro-
Electronics processing technology carries out overlay film on photocathode surface, and can prepare vacuum channel by etching technics such as photoetching processes, makes
Vacuum channel transistor of the preparation based on photocathode is possibly realized.In addition the electron emission characteristic of photocathode is by incident intensity
The conditions such as degree, incident light pulse frequency, anode voltage influence, so the vacuum channel transistor based on photocathode is than other kinds
The vacuum channel transistor of class has more modulator approaches and on-off ratio.
Fig. 2 shows a kind of structural schematic diagrams of the vacuum channel transistor based on photocathode according to the present invention.Crystal
Pipe includes anode layer 210, the first insulating layer 220, grid layer 230, second insulating layer 204 and photocathode 250, and is formed in
Between anode and photocathode, through the vacuum channel 260 of the first insulating layer, grid layer and second insulating layer.Photocathode 250
It including support substrate 251 and is cathode luminous cathode thin film 252 thereon.
Anode layer material is conductive material, can be but be not limited to the metals such as the semiconductors such as Si or Al.Anode thickness is excellent
It is selected as 300 μm~2mm.
Gate layer material is conductive material, can be but be not limited to Si, Al and Mo etc..The thickness of grid layer is preferably
10nm~10 μm
Photocathode includes photocathode support substrate and the photocathode film layer that is formed thereon.Support substrate is for example
For glass, thickness is, for example, 0.3~5mm, and the material of photocathode film can be but be not limited to GaN photocathode, GaAs
Photocathode, bialkali photocathode or multialkali photocathode, the thickness of film are preferably 40nm~3 μm.
The material of insulating layer can be but be not limited to Al2O3Or SiO2Deng.The thickness of first insulating layer and second insulating layer
10nm~15 μm are respectively preferably, the thickness of two insulating layers can be identical or not identical.
Vacuum channel is formed in two insulating layers and grid, and runs through two insulating layers and grid, is highly equal to two
The sum of insulating layer and gate.The shape of vacuum channel can be but be not limited to cylindrical or square column type.Cylinder vacuum
Raceway diameter is preferably 40nm~15 μm, and the side length of square column type vacuum channel is preferably 40nm~15 μm.
According to another embodiment of the present invention, a kind of vacuum channel transistor array is provided, including is arranged in the form of an array
Multiple vacuum channel transistors, each transistor is with structure as described above.Such as Fig. 2 shows two to be arranged side by side
Vacuum channel transistor.
According to another aspect of the present invention, a kind of preparation method of photocathode vacuum channel transistor is provided, including with
Lower step:
S1 is dirty using organic solvent, the organic matter of acid solution and deionized water cleaning anode material surface and oxide etc.
Contaminate object；
S2 makes the first insulating layer on the resulting anode material surface of the first step；
S3 makes grid conducting layer in the first surface of insulating layer of second step resulting structures；
S4 makes second insulating layer in the Gate Electrode Conductive layer surface of third step resulting structures；
S5 makes vacuum channel in the 4th resulting multi-layer film material of step using photoetching or ion beam focusing lithographic technique；
S6 is purified and is activated to first electrode；
The 5th resulting structure of step is formed with the side of insulating layer to S7 and the photocathode film of photocathode closely pastes simultaneously
It is fixed, thus obtain the vacuum channel transistor according to the present invention based on photocathode.
Beneficial effects of the present invention are described in detail below with reference to specific example.
Example 1
Vacuum channel transistor based on GaAs photocathode and preparation method thereof is as follows:
The single crystal silicon material that anode material is selected as with a thickness of 0.52mm；Two insulating layers are SiO2Material, thickness are 5
μm；Grid layer is Si material, with a thickness of 4 μm；Photocathode is GaAs photocathode, and cathode material is with a thickness of 3 μm, support substrate
For the glass substrate with a thickness of 5mm；Vacuum channel shape be square column type, 10 μm of side length.
Vacuum channel transistor based on photocathode the preparation method is as follows:
It is dirty using acetone, dehydrated alcohol, acid solution and deionized water cleaning silicon wafer surface organic matter and oxide etc.
Contaminate object；
Silicon wafer is put into oxidation furnace, is aoxidized in silicon wafer surface and generates the first SiO2Insulating layer；
In the resulting SiO of second step2Surface grows silicon active layer；
The resulting material of third step is placed again into oxidation furnace, is aoxidized in wafer surface and generates the 2nd SiO2Insulating layer,
First and second SiO2Not oxidized Si active material is the grid layer of transistor between layer；
Vacuum channel is made to silicon wafer surface in the resulting wafer surface of the 4th step using ion beam focusing lithographic technique；
It cleans and activates GaAs photocathode；
The chip architecture with vacuum channel that 5th step obtains is fitted in the resulting GaAs photocathode of the 6th step
Together, that is, the vacuum channel transistor based on GaAs photocathode is obtained.
Fig. 3 be under 532mm illumination, when anode voltage is 10V and photocathode voltage is 0V, the vacuum channel of example 1
The grid voltage control characteristic of transistor.When grid voltage is improved by 3V to 15V, the on-off ratio of transistor is greater than 104, it is a kind of
High performance transistor.
Example 2
Vacuum channel transistor based on GaN photocathode and preparation method thereof is as follows:
The Al material that anode material is selected as with a thickness of 1mm；Two insulating layers are Al2O3Material, thickness are 100nm；Grid
Extremely Mo metal material, with a thickness of 100nm；Photocathode is GaN photocathode, and cathode material is with a thickness of 80nm, glass support
Substrate thickness is 0.46mm；Vacuum channel shape is circle, diameter 100nm.
Vacuum channel transistor based on photocathode the preparation method is as follows:
The first step cleans Al material surface organic matter and oxidation using acetone, dehydrated alcohol, acid solution and deionized water
The pollutants such as object；
Second step prepares the first Al in Al material surface using ion sputtering deposition technology2O3Insulating layer；
Third step prepares Mo grid layer in the resulting material surface of second step using ion sputtering deposition technology；
4th step prepares the 2nd Al in the resulting material surface of third step using ion sputtering deposition technology2O3Insulating layer；
5th step makes vacuum channel Al material surface in the resulting wafer surface of the 4th step using photoetching process；
6th step cleans and activates GaN photocathode；
7th step by what the 5th step obtained there is vacuum channel chip architecture and the resulting GaN photocathode of the 6th step to paste
It is combined, i.e. vacuum channel transistor of the acquisition based on GaN photocathode.
It is under 266mm illumination from Fig. 4, when anode voltage is 3V and photocathode voltage is 0V, the grid of transistor is electric
Press control characteristic.When grid voltage is improved by 0.2V to 1V, the on-off ratio of transistor is greater than 103, equally it is a kind of high performance
Transistor.
The present invention uses photocathode as the cathode of vacuum channel transistor, effectively increases the work frequency of transistor
Rate, and possess the working condition of voltage and light source two ways control transistor, it is a kind of ideal high-frequency and high efficiency
Transistor.
Obviously, the above embodiment of the present invention be only to clearly illustrate example of the present invention, and not be pair
The restriction of embodiments of the present invention may be used also on the basis of the above description for those of ordinary skill in the art
To make other variations or changes in different ways, all embodiments can not be exhaustive here, it is all to belong to this hair
The obvious changes or variations that bright technical solution is extended out are still in the scope of protection of the present invention.
Claims (10)
1. a kind of vacuum channel transistor, which is characterized in that the transistor successively includes anode, the first insulating layer, grid, second
Insulating layer and photocathode, wherein being formed with vacuum channel between the anode and photocathode.
2. transistor according to claim 1, which is characterized in that the vacuum channel runs through first insulating layer, grid
Pole layer and second insulating layer setting.
3. transistor according to claim 1, which is characterized in that the anode is conductive material or semiconductor material；It is excellent
Selection of land, anode material are Si or Al；Preferably, anode thickness is 300 μm~2mm.
4. transistor according to claim 1, which is characterized in that the grid is conductive material；Preferably, grid material
For Si, Al and Mo；Preferably, gate is 10nm~10 μm.
5. transistor according to claim 1, which is characterized in that the photocathode includes cathode substrate and is formed in lining
Photocathode film on bottom, the material of the photocathode are GaN photocathode, GaAs photocathode, bialkali photocathode
Or multialkali photocathode.
6. transistor according to claim 5, which is characterized in that the photocathode film with a thickness of 40nm~3 μm.
7. transistor according to claim 1, which is characterized in that the vacuum channel is cylinder vacuum channel, preferably
Diameter is 40nm~15 μm；Or the vacuum channel is square column type vacuum channel, preferably side length is 40nm~15 μm.
8. transistor according to claim 1, which is characterized in that first insulating layer and the thickness of second insulating layer point
It Wei not 10nm~15 μm.
9. a kind of vacuum channel transistor array, which is characterized in that each transistor is according to vacuum ditch described in claim 1
Road transistor.
10. a kind of preparation method of vacuum channel transistor, which is characterized in that method includes the following steps:
Anode material is provided；
The first insulating layer is formed in anode surface；
Grid layer is formed on the first insulating layer；
Second insulating layer is formed on the grid layer；
The second insulating layer, grid layer and the first insulating layer are sequentially etched using photoetching process or ion beam focusing etching technics
To the anode surface；
Photocathode is provided, photocathode is conformed into resulting structures surface, obtains the photocathode crystal with vacuum channel
Pipe.
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Cited By (6)
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| CN110310873A (en) * | 2019-06-25 | 2019-10-08 | 东南大学 | A vertical nano-gap vacuum transistor with an extended gate structure and its preparation method |
| CN111081809A (en) * | 2019-12-23 | 2020-04-28 | 中山大学 | High-sensitivity X-ray detector |
| CN113345781A (en) * | 2021-05-25 | 2021-09-03 | 中国科学院上海微系统与信息技术研究所 | Nano air channel transistor |
| CN113506824A (en) * | 2020-09-10 | 2021-10-15 | 安藤善文 | Vacuum channel field effect transistor, method for manufacturing the same, and semiconductor device |
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| CN117238738A (en) * | 2023-11-13 | 2023-12-15 | 南京信息工程大学 | A vertical structure vacuum channel transistor based on wide band gap material and its preparation method |
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| CN110310873A (en) * | 2019-06-25 | 2019-10-08 | 东南大学 | A vertical nano-gap vacuum transistor with an extended gate structure and its preparation method |
| CN111081809A (en) * | 2019-12-23 | 2020-04-28 | 中山大学 | High-sensitivity X-ray detector |
| CN113506824A (en) * | 2020-09-10 | 2021-10-15 | 安藤善文 | Vacuum channel field effect transistor, method for manufacturing the same, and semiconductor device |
| CN113345781A (en) * | 2021-05-25 | 2021-09-03 | 中国科学院上海微系统与信息技术研究所 | Nano air channel transistor |
| CN115411123A (en) * | 2022-07-04 | 2022-11-29 | 电子科技大学 | Semiconductor nano-air channel diode terahertz optical mixer |
| CN117238738A (en) * | 2023-11-13 | 2023-12-15 | 南京信息工程大学 | A vertical structure vacuum channel transistor based on wide band gap material and its preparation method |
| CN117238738B (en) * | 2023-11-13 | 2024-02-20 | 南京信息工程大学 | Vertical structure vacuum channel transistor based on wide bandgap material and preparation method thereof |
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