CN109786959A - A kind of millimeter wave antenna - Google Patents
A kind of millimeter wave antenna Download PDFInfo
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- CN109786959A CN109786959A CN201910176884.9A CN201910176884A CN109786959A CN 109786959 A CN109786959 A CN 109786959A CN 201910176884 A CN201910176884 A CN 201910176884A CN 109786959 A CN109786959 A CN 109786959A
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Abstract
This application involves a kind of millimeter wave antennas.Millimeter wave antenna is fed by coaxial feeder, including medium base, has the first face and the second face being disposed opposite to each other；Radiating layer is formed in the first face of medium base；Radiating layer forms the first irradiation unit, and the first irradiation unit is for generating the first resonance peak；Ground plane is formed in the second face of medium base；Short-circuit column runs through medium base, and connects radiating layer and ground plane；The inner conductor of coaxial feeder is through ground plane and medium base and is connected to radiating layer, and the outer conductor of coaxial feeder is connect with ground plane；Short-circuit column, the inner conductor of coaxial feeder and radiating layer form the second irradiation unit, and the second irradiation unit is for generating the second resonance peak；The difference of the corresponding wavelength of first resonance peak and the corresponding wavelength of the second resonance peak is within a preset range.The application can be superimposed by the radiation resonance of the first irradiation unit with the radiation resonance of the second irradiation unit, and then effectively extend the bandwidth of millimeter wave antenna.
Description
Technical field
The present invention relates to communication technique fields, more particularly to a kind of millimeter wave antenna.
Background technique
With the development of the 5G communication technology, the requirement to terminal antenna is more and more harsher, needs in a limited space to the greatest extent
More antennas may mostly be integrated, and higher to performance requirement.And traditional millimeter wave antenna in structure have section it is low,
Advantage small in size and easily with ambient enviroment general character can be used to meet the millimeter wave antenna design of 5G application.
Traditional millimeter wave antenna (microstrip antenna) is usually to enclose on one side in a thin-medium base
Electrically conductive layer (usually thin metal layer) is used as ground plane, and the radiating layer of certain shapes is made in another side, and presents radiating layer
The antenna of electricity.However, the bandwidth of operation of this traditional microstrip antenna is relatively narrow, and cannot be used directly in 5G millimeter wave antenna.
Therefore, it is necessary to design with creating, a kind of structure is simplified, the millimeter wave antenna that can be applied to 5G of broader bandwidth.
Summary of the invention
Based on this, it is necessary in view of the above technical problems, provide a kind of simple low section of structure, can be improved bandwidth
Millimeter wave antenna.
To achieve the above object, the technical solution of the present invention is as follows: a kind of millimeter wave antenna, is fed by coaxial feeder, until
Include: less
Medium base has the first face and the second face being disposed opposite to each other；
Radiating layer is formed in the first face of the medium base；The radiating layer forms the first irradiation unit, first spoke
Penetrate portion for generate the first resonance peak；
Ground plane is formed in the second face of the medium base；
Short-circuit column runs through the medium base, and connects the radiating layer and the ground plane；
The inner conductor of the coaxial feeder is through the ground plane and the medium base and is connected to the radiating layer,
The outer conductor of the coaxial feeder is connect with the ground plane；
The short circuit column, the inner conductor of the coaxial feeder and the radiating layer the second irradiation unit of formation, described second
Irradiation unit is for generating the second resonance peak；
The difference of the corresponding wavelength of first resonance peak and the corresponding wavelength of second resonance peak is within a preset range.
The radiating layer, medium base and ground plane constitute microstrip antenna structure in one of the embodiments, are formed micro-
Band radiation mode；The radiating layer, short-circuit column, the inner conductor of coaxial feeder and medium base and ground plane constitute inverse-F antenna
Structure forms inverse-F antenna radiation mode.
The operation wavelength of the millimeter wave antenna is λ in one of the embodiments, and the radiating layer is rectangular radiation
Layer, and the length of the radiating layer is L, then (1-10%) * 1/2 λ≤L≤(1+10%) * 1/2 λ.
The operation wavelength of the millimeter wave antenna is λ, the short circuit column and the inner conductor in one of the embodiments,
Between spacing be S1, the distance between edge nearest from the short-circuit column and the short-circuit column of the radiating layer are S2,
Then S1 and S2 meet following relational expression:
(1-10%) * 1/4 λ≤(S1+S2)≤(1+10%) * 1/4 λ.
The width of the radiating layer is W, (1+10%) * 1/2 λ≤W≤(1+20%) * 1/2 in one of the embodiments,
λ。
The inner conductor is located at the edge along the extension of its width direction of the radiating layer in one of the embodiments,
On perpendicular bisector.
The short-circuit column is located at the edge of the radiating layer extended along its length in one of the embodiments,
On perpendicular bisector.
Extend along its length a edge for the short-circuit column and the radiating layer in one of the embodiments,
The distance between be 0.1mm~0.3mm.
The width of the radiating layer is W in one of the embodiments, and the diameter of the short circuit column is D, then (1-
10%) * 0.05W≤D≤(1+10%) * 0.05W.
The material of the medium base is liquid crystal polymer in one of the embodiments,.
Millimeter wave antenna of the invention not only can generate the first resonance peak by the first irradiation unit, and can pass through
Second irradiation unit generates the second resonance peak, also, the difference of the corresponding wavelength of the first resonance peak and the corresponding wavelength of the second resonance peak
Within a preset range.To radiate the synergistic effect of resonance by two above, and then effectively extend millimeter wave antenna
Bandwidth.
Detailed description of the invention
Fig. 1 is the schematic top plan view of the millimeter wave antenna in one embodiment；
Fig. 2 is the diagrammatic cross-section of the millimeter wave antenna in one embodiment；
Fig. 3 is the standing-wave ratio simulation curve figure of the millimeter wave antenna in one embodiment；
Fig. 4 is Electromagnetic Simulation H face directional diagram of the millimeter wave antenna in one embodiment in 24.5GHz；
Fig. 5 is Electromagnetic Simulation H face directional diagram of the millimeter wave antenna in one embodiment in 26.5GHz；
Fig. 6 is Electromagnetic Simulation H face directional diagram of the millimeter wave antenna in one embodiment in 27.5GHz.
Specific embodiment
It is with reference to the accompanying drawings and embodiments, right in order to which the objects, technical solutions and advantages of the application are more clearly understood
The application is further elaborated.It should be appreciated that specific embodiment described herein is only used to explain the application, not
For limiting the application.
The shortcomings that traditional microstrip antenna has the thin advantage of thickness, but there is also narrow bandwidths simultaneously.Design thickness it is thin,
While millimeter wave antenna small in size and easy to process using microstrip antenna structure, the performances such as the beamwidth of antenna, gain are taken into account,
It is the key points and difficulties of millimeter wave antenna design.
In one embodiment, with reference to Fig. 1 and Fig. 2, a kind of millimeter wave antenna is provided, is two layers of conductive foil one
Be laminated on substrate, fed by coaxial feeder C0, specifically, it include medium base 100, radiating layer 200, ground plane 300,
Short-circuit column 400, the medium base 100 are the substrate made of insulating materials, and the radiating layer 200 and ground plane 300 are to lead
Electric layers of foil, the radiating layer 200, medium base 100 and ground plane 300 constitute microstrip antenna structure.
It is worth noting that, millimeter wave antenna uses the structure of two conductive foil layers in the present embodiment, other real
It applies in example, in order to realize more functions, millimeter wave antenna is also possible to the structure that more than two conductive foil layers are laminated.
Referring to fig. 1 and fig. 2, the coaxial feeder C0 includes inner conductor C1 and outer conductor C2, and the inner conductor C1 is passed through
It wears the ground plane 300 and the medium base 100 and is connected to the radiating layer 200, the outer conductor of the coaxial feeder
C2 is connect with the ground plane 300.
The material of medium base 100 can preferentially select liquid crystal polymer (LCP).Liquid crystal polymer has low-loss special
Property.Therefore, material of the liquid crystal polymer as medium base 100 is selected, aerial loss can be effectively reduced.Meanwhile liquid crystal is poly-
Closing object can preferably integrate with circuit system as flexible material, and then be convenient for modularized processing.Radiating layer 200 connects
Stratum 300, short-circuit column 400 are the conductors materials such as metal, and copper alloy can be selected.
Medium base 100 has the first face 100a (upper surface in Fig. 2) being disposed opposite to each other and the second face 100b (in Fig. 2
Lower surface).Radiating layer 200 is formed in the first face 100a of medium base 100.Radiating layer 200 forms the first irradiation unit, in turn
Generate the first resonance peak of micro-strip radiation mode.Ground plane 300 is formed in the second face 100b of medium base 100.Ground plane 300
The electromagnetic wave that can be radiated to radiating layer 200 plays the role of with reference to ground.
Short-circuit column 400 can be the plated through-hole on circuit board between radiating layer 200 and ground plane 300.Medium base
Layer 100 is formed with first through hole 110.Short-circuit column 400 is formed in first through hole 110.Short-circuit column 400 passes through first through hole 110
And run through medium base 100, and then connect radiating layer 200 and ground plane 300, so that short between radiating layer 200 and ground plane 300
Road.
Inner conductor C1 connection radiating layer 200.Specifically, medium base 100 is also formed with the second through-hole 120, and ground plane
Third through-hole 310 is formed in 300.Inner conductor C1 sequentially passes through ground plane by third through-hole 310 and the second through-hole 120
300 and medium base 100, and then radiating layer 200 is connected, to come for the feed of radiating layer 200.Wherein, third through-hole 310
Diameter is greater than the diameter of inner conductor C1, so that inner conductor C1 insulate through ground plane 300 and with ground plane 300.
Since short-circuit column 400 and inner conductor C1 run through medium base 100 and connect radiating layer 200.Therefore, short-circuit column
400, inner conductor C1 and radiating layer 200 can form the second irradiation unit, and the second irradiation unit, which can radiate, generates inverse-F antenna radiation
Second resonance peak of mode.
The difference of the corresponding wavelength of first resonance peak and the corresponding wavelength of the second resonance peak is within a preset range.Therefore, second
The resonance that irradiation unit generates can be superimposed upon on the basis of the resonance of the first irradiation unit generation, and then can effectively widen millimeter wave day
The bandwidth of line.Here preset range refers to what the resonance that the second irradiation unit can be made to generate and the first irradiation unit generated
Resonance is closed on and can be overlapped mutually, so expand overall bandwidth wave-length coverage, specifically can according to actual product demand into
Row setting, the difference of the wavelength of two resonance peaks is set as the wavelength X of default center frequency in this embodiment, can obtain pre-
Fixed frequency band.
At this point, specifically can be set into, side of the inner conductor C1 from ground plane 300 far from radiating layer 200, run through ground plane
300 and medium base 100, and then connect radiating layer 200.And the outer conductor C2 of inner conductor C1 is surrounded, it is separate in ground plane 300
The side of radiating layer 200 connects ground plane 300.Radiating layer 300, medium base 100 and ground plane 300 constitute microstrip antenna knot
Structure forms micro-strip radiation mode.It radiating layer 300, short-circuit column 400, the inner conductor C1 of coaxial feeder and medium base 100 and connects
Stratum 300 constitutes inverse-F antenna structure, forms inverse-F antenna radiation mode.
In one embodiment, with reference to Fig. 1, the operation wavelength of millimeter wave antenna is λ.Radiating layer 200 is specifically configured to square
Shape radiating layer.The length of radiating layer 200 is L, (1-10%) * 1/2 λ≤L≤(1+10%) * 1/2 λ, and then generates micro-strip mode
Energy radiation.Here, when L is equal to 1/2 λ, it can produce ideal millimicro band model radiation.But, it is contemplated that actual processing
The value of error condition, L can also have certain deviation, to reduce difficulty of processing, improve yield rate.
In one embodiment, with reference to Fig. 1, the spacing between short-circuit column 400 and inner conductor C1 is S1, the radiating layer
The distance between 200 edge nearest from the short-circuit column 400 and the short-circuit column 400 are S2.Design (1-10%) * 1/4 λ
≤ (S1+S2)≤(1+10%) * 1/4 λ, and then can effectively generate inverse-F antenna mode radiation.Here, S1+S2 is equal to 1/4 λ
When, it can produce the energy radiation of ideal inverse-F antenna.But, it also is contemplated that arrive actual processing error condition, the value of S1+S2
There can also be certain deviation, to reduce difficulty of processing, improve yield rate.
When radiating layer 200 is specifically configured to rectangular radiation layer, it can design what radiating layer 200 extended along its width direction
The distance between edge and short-circuit column 400 are S2.Radiating layer 200 can be in the edge along the edge that its width direction extends
Point, or the midpoint connecting line of short-circuit column 400 and inner conductor C1 is in the intersection point at the edge, or the edge other
Point.Alternatively, can also design radiating layer 200 along the distance between the edge that its length direction extends and short-circuit column 400 is S2.This Shen
Please to this, there is no limit.
Moreover, in the embodiment of the present application, the radiating layer of radiating layer 200 or other shapes in addition to a rectangle,
As long as it can produce micro-strip mode radiation.
In one embodiment, it continues to refer to figure 1, when radiating layer 200 is specifically configured to rectangular radiation layer, radiating layer 200
Width be W.Design (1+10%) * 1/2 λ≤W≤(1+20%) * 1/2 λ so that short-circuit column 400, inner conductor C1 and
The inverted f irradiation unit that radiating layer 200 is formed can relatively easily carry out inverted f radiation, and then generate the second resonance peak.
In the embodiment of the present application, in order to enable pattern structure has good symmetry, spoke can be located at inner conductor C1
It penetrates on the perpendicular bisector along the edge that its width direction extends of layer 200；Or short-circuit column 400 also can be set and be located at radiating layer
On the perpendicular bisector at 200 edge extended along its length.Certainly, while the edge that inner conductor C1 is located at radiating layer 200 is set
On the perpendicular bisector at the edge that its width direction extends, short-circuit column 400 is located at the edge of radiating layer 200 extended along its length
Perpendicular bisector on, would be more advantageous symmetrical in pattern structure.
In one embodiment, between short-circuit column 400 and extend along its length a edge for radiating layer 200
Distance is 0.1mm~0.3mm.At this point, on the one hand short-circuit column 400 and then is reduced to radiating layer close to the edge of radiating layer 200
The influence of current distribution on 200.On the other hand one end distance between short-circuit column 400 and the edge of radiating layer 200 makes short
Road column 400 is easy to process.
In one embodiment, the width of radiating layer is W, and the diameter of short-circuit column is D.Design (1-10%) * 0.05W≤D
≤ (1+10%) * 0.05W so that antenna feed impedance imaginary part is as small as possible so that short circuit metal column 6 do not introduce it is excessive
Inductance parameter.
In one embodiment of the application, the specific length of millimeter wave antenna is (4mm-8mm), and width is (4mm-8mm), thick
Degree is (0.3mm-0.5mm).Thickness (0.3mm-0.5mm) is only about 0.07 times of operation wavelength, has the characteristics that ultralow section.
The rectangular radiation layer that radiating layer 200 is, the length is 1/2 operation wavelengths, and then form the first irradiation unit.First spoke
Micro-strip mode radiation can be carried out and generate the first resonance peak by penetrating portion's receiving feed.The width of radiating layer 200 is greater than 1/2 operating wave
It is long, in order to make inner conductor C1 and the radiating layer 200 of short-circuit column 400, coaxial line that the second irradiation unit, Jin Erke be collectively formed
The second resonance peak is generated to form inverse-F antenna radiation mode.What the resonance and the second irradiation unit that the first irradiation unit generates generated
Resonance can be overlapped mutually, and then expand bandwidth.
Fig. 3 is the standing-wave ratio simulation curve figure of the millimeter wave antenna of the embodiment.It follows that from 24.6GHz-
When 27.7GHz, antenna standing wave ratio VSWR < 2.Therefore, the bandwidth of the millimeter wave antenna of the embodiment has reached 3.1GHz.And then make
There must be the millimeter wave antenna of ultralow section to reach wider working band.The millimeter wave antenna of Fig. 4 embodiment exists
The face the H directional diagram of 24.5GHz.H face directional diagram of the millimeter wave antenna of Fig. 5 embodiment in 26.5GHz.Fig. 6 embodiment
H face directional diagram of the millimeter wave antenna in 27.5GHz.It follows that the millimeter wave antenna of the embodiment is in 24.5GHz, gain
For 7.19dB；In 26.5GHz, gain 7.38dB；In 27.5dB, gain 6.89dB.Therefore, the present embodiment millimeter wave
Antenna pattern structure is symmetrical and gain stabilization, is highly suitable for that space is small, the high 5G wireless communication of integrated level.
Each technical characteristic of above embodiments can be combined arbitrarily, for simplicity of description, not to above-described embodiment
In each technical characteristic it is all possible combination be all described, as long as however, the combination of these technical characteristics be not present lance
Shield all should be considered as described in this specification.
The several embodiments of the application above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the concept of this application, various modifications and improvements can be made, these belong to the protection of the application
Range.Therefore, the scope of protection shall be subject to the appended claims for the application patent.
Claims (10)
1. a kind of millimeter wave antenna, is fed by coaxial feeder characterized by comprising
Medium base has the first face and the second face being disposed opposite to each other；
Radiating layer is formed in the first face of the medium base；The radiating layer forms the first irradiation unit, first irradiation unit
For generating the first resonance peak；
Ground plane is formed in the second face of the medium base；
Short-circuit column runs through the medium base, and connects the radiating layer and the ground plane；
The inner conductor of the coaxial feeder is through the ground plane and the medium base and is connected to the radiating layer, described
The outer conductor of coaxial feeder is connect with the ground plane；
The short circuit column, the inner conductor of the coaxial feeder and the radiating layer form the second irradiation unit, second radiation
Portion is for generating the second resonance peak；
The difference of the corresponding wavelength of first resonance peak and the corresponding wavelength of second resonance peak is within a preset range.
2. millimeter wave antenna according to claim 1, which is characterized in that the radiating layer, medium base and ground plane structure
At microstrip antenna structure, micro-strip radiation mode is formed；The radiating layer, short-circuit column, coaxial feeder inner conductor and medium base
Layer and ground plane constitute inverse-F antenna structure, form inverse-F antenna radiation mode.
3. millimeter wave antenna according to claim 2, which is characterized in that the operation wavelength of the millimeter wave antenna is λ, institute
Stating radiating layer is rectangular radiation layer, and the length of the radiating layer is L, then (1-10%) * 1/2 λ≤L≤(1+10%) * 1/2 λ.
4. millimeter wave antenna according to claim 2 or 3, which is characterized in that the operation wavelength of the millimeter wave antenna is
λ, the spacing between the short circuit column and the inner conductor are S1, the edge and institute nearest from the short-circuit column of the radiating layer
Stating the distance between short-circuit column is S2, then S1 and S2 meet following relational expression:
(1-10%) * 1/4 λ≤(S1+S2)≤(1+10%) * 1/4 λ.
5. millimeter wave antenna according to claim 2 or 3, which is characterized in that the width of the radiating layer is W, (1+
10%) * 1/2 λ≤W≤(1+20%) * 1/2 λ.
6. millimeter wave antenna according to claim 1 or 2, which is characterized in that the inner conductor of the coaxial feeder is located at institute
It states on the perpendicular bisector along the edge that its width direction extends of radiating layer.
7. millimeter wave antenna according to claim 1 or 2, which is characterized in that the short circuit column is located at the radiating layer
On the perpendicular bisector at the edge extended along its length.
8. millimeter wave antenna according to claim 2 or 3, which is characterized in that the edge of the short circuit column and the radiating layer
The distance between edge that its length direction extends is 0.1mm~0.3mm.
9. millimeter wave antenna according to claim 2 or 3, which is characterized in that the width of the radiating layer is W, described short
The diameter of road column is D, then (1-10%) * 0.05W≤D≤(1+10%) * 0.05W.
10. millimeter wave antenna according to claim 1 or 2, which is characterized in that the material of the medium base is poly- for liquid crystal
Close object.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910176884.9A CN109786959B (en) | 2019-03-08 | 2019-03-08 | Millimeter wave antenna |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910176884.9A CN109786959B (en) | 2019-03-08 | 2019-03-08 | Millimeter wave antenna |
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| Publication Number | Publication Date |
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| CN109786959A true CN109786959A (en) | 2019-05-21 |
| CN109786959B CN109786959B (en) | 2022-02-01 |
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| CN201910176884.9A Active CN109786959B (en) | 2019-03-08 | 2019-03-08 | Millimeter wave antenna |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110416727A (en) * | 2019-07-23 | 2019-11-05 | 深圳市信维通信股份有限公司 | Dual polarization millimeter wave antenna unit, antenna system and mobile terminal |
| CN115425415A (en) * | 2022-09-02 | 2022-12-02 | 江西中烟工业有限责任公司 | Millimeter wave frequency-adjustable patch antenna based on short circuit pin and diode loading |
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| CN1731626A (en) * | 2005-08-26 | 2006-02-08 | 宁焕生 | Broadband microstrip antenna and its feed matching device and method |
| CN204144441U (en) * | 2014-10-24 | 2015-02-04 | 江苏中兴微通信息科技有限公司 | Based on the Q-band ultrahigh speed mobile terminal of wireless local area network antenna of high-order mode resonance |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110416727A (en) * | 2019-07-23 | 2019-11-05 | 深圳市信维通信股份有限公司 | Dual polarization millimeter wave antenna unit, antenna system and mobile terminal |
| CN110416727B (en) * | 2019-07-23 | 2024-05-31 | 深圳市信维通信股份有限公司 | Dual-polarized millimeter wave antenna unit, antenna system and mobile terminal |
| CN115425415A (en) * | 2022-09-02 | 2022-12-02 | 江西中烟工业有限责任公司 | Millimeter wave frequency-adjustable patch antenna based on short circuit pin and diode loading |
| CN115425415B (en) * | 2022-09-02 | 2023-09-12 | 江西中烟工业有限责任公司 | Millimeter wave frequency adjustable patch antenna based on short-circuit needle and diode loading |
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| CN109786959B (en) | 2022-02-01 |
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