CN109768175A - A kind of new packaging method of QLED - Google Patents
A kind of new packaging method of QLED Download PDFInfo
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- CN109768175A CN109768175A CN201910020411.XA CN201910020411A CN109768175A CN 109768175 A CN109768175 A CN 109768175A CN 201910020411 A CN201910020411 A CN 201910020411A CN 109768175 A CN109768175 A CN 109768175A
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Abstract
The invention discloses the new packaging methods of QLED a kind of, are related to technology of quantum dots field.The following steps are included: production, using ceramics as the bracket of material, layer printed circuit board, wherein being divided into four parts, a part is for silver-plated, and formation silver coating, remaining three parts is respectively the anode of red-green-blue；The spin coating polymethyl methacrylate on silver coating, the dielectric layer as quantum dot；Using printing form, the quantum dot that excitation can issue feux rouges is printed on silver coating, forms quantum dot layer；On quantum dot layer under the spin coating state of oxidation polythiophene of high stability derivative polyethylene dioxythiophene；One layer of indium tin oxide transparent conductive semiconductor film is sputtered on the derivative polyethylene dioxythiophene layer of anti-polythiophene.Using vertical structure, by three primary colours sandwich package, the independently-powered control of three primary colours shines, and single QLED includes three kinds of colors, and original Technical comparing, and horizontal occupied area is about original 1/3, reaches even light mixing and bright in luster.
Description
Technical field
The present invention relates to technology of quantum dots field, specially a kind of new packaging method of QLED.
Background technique
QLED is the self-luminous technology for not needing additional light source.Quantum dot is that some naked eyes can not be seen, is extremely micro-
Small semiconductor nanocrystal is a kind of particle of the partial size less than 10 nanometers.Typically, quantum dot is by zinc, cadmium, selenium and sulphur
Atom is composed.Quantum dot has a distinguished characteristic: whenever the stimulation by light or electricity, quantum dot will have been issued
The color of coloured light line, light determines that this characteristic enables quantum dot to change by the composition material and size shape of quantum dot
The light color that light source issues.Creation QDVision in 2005 is born in the graduation of Massachusetts science and engineering.Joint founder Cole Su Liwen
It introduces, his company has grasped the photochromic controlling technology of quantum dot completely, said from working principle, quantum dot is glimmering with YAG
Body of light is similar, allows quantum dot to exhale varicolored combination by light stimulation, LED light is finally allowed to exhale the lamp of white
Light.The blue light that LED light source issues can be fully converted to white light by quantum dot, rather than can only be absorbed as YAG fluorophor
A part, it means that under same bulb brightness, blue light needed for quantum dot LED light is less, needs in electric light conversion
Electric power it is naturally less, more efficient performance enables it even better in terms of energy-saving and emission-reduction.
QLED is packaged into the monochromatic lamp bead of different colours by current technology, is mainly had RGB " three primary colours ", is needed three
Tri- kinds of colors of QLED are combined into other colors, and general RGB is a pixel, since light source is monochromatic light using horizontal row
Cloth influences the promotion of resolution ratio, and it is uneven light mixing occur so that single pixel point is larger.
Summary of the invention
(1) the technical issues of solving
In view of the deficiencies of the prior art, the present invention provides the new packaging method of QLED a kind of, pixel volume can be made by having
The advantages that smaller and light output is more uniform solves the problems, such as that current lamp bead light mixing is non-uniform.
(2) technical solution
It can make the purpose that pixel volume is smaller and light output is more uniform for realization is above-mentioned, the present invention provides following technical side
A kind of case: new packaging method of QLED, comprising the following steps:
S1, production are using ceramics as the bracket of material, layer printed circuit board, wherein being divided into four parts, a part is used for silver-plated, shape
At silver coating, remaining three parts is respectively the anode of red-green-blue；
S2, the spin coating polymethyl methacrylate on silver coating, the dielectric layer as quantum dot；
S3, using printing form, excitation can be issued into the quantum dot of feux rouges and be printed on silver coating, quantum dot layer is formed；
S4, on quantum dot layer under the spin coating state of oxidation polythiophene of high stability derivative polyethylene dioxythiophene；
S5, one layer of indium tin oxide transparent conductive semiconductor is sputtered on the derivative polyethylene dioxythiophene layer of anti-polythiophene
Film, the anode with a thickness of 55-65 nanometers, as red quantum dot；
S6, red quantum dot anode is formed in using the material of high temperature resistant anti-oxidation and high transparency；
S7, under vacuum conditions, using magnetron sputtering technique, by the collective effect of voltage and magnetic field, with the inertia being ionized
Gas ion bombards target, causes target to be ejected in the form of ion, atom or molecule and is deposited on shape on substrate
At film；
S8, using the manufacture craft of identical red quantum dot, the quantum dot of green and blue is made；
S9, finally setting thin-film encapsulation layer is packaged on QLED device.
It advanced optimizes the technical program, in the S3, increases hole injection layer, multilayer hole transmission layer, electronic blocking
The one or more layers of structure such as layer or electron injecting layer.
Advanced optimize the technical program, in the S7, film is silicon oxide layer.
It advanced optimizes the technical program, in the S8, is separated by between the anode of three kinds of colors using insulating materials.
Advanced optimize the technical program, in the S9, thin-film encapsulation layer is realized using single-layer or multi-layer film, material
Using organic film or inorganic thin film, when the number of plies of thin-film encapsulation layer is greater than three layers, using organic/inorganic composite film.
(3) beneficial effect
Compared with prior art, the present invention provides the new packaging methods of QLED a kind of, have following the utility model has the advantages that using hanging down
Straight structure, by three primary colours sandwich package, the independently-powered control of three primary colours shines, and single QLED includes three kinds of colors, with original skill
Art compares, and horizontal occupied area is about original 1/3, to reach even light mixing and bright in luster.
Specific embodiment
Below in conjunction with the embodiment of the present invention, technical solution in the embodiment of the present invention is clearly and completely retouched
It states, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Based on the present invention
In embodiment, every other implementation obtained by those of ordinary skill in the art without making creative efforts
Example, shall fall within the protection scope of the present invention.
Embodiment one:
A kind of new packaging method of QLED, comprising the following steps:
S1, production are using ceramics as the bracket of material, layer printed circuit board, wherein being divided into four parts, a part is used for silver-plated, shape
At silver coating, remaining three parts is respectively the anode of red-green-blue；
S2, the spin coating polymethyl methacrylate on silver coating, the dielectric layer as quantum dot；
S3, using printing form, excitation can be issued into the quantum dot of feux rouges and be printed on silver coating, quantum dot layer is formed, in order to
The performance of QLED device is improved, the one kind such as hole injection layer, multilayer hole transmission layer, electronic barrier layer or electron injecting layer are increased
Or a variety of layers of structure；
S4, on quantum dot layer under the spin coating state of oxidation polythiophene of high stability derivative polyethylene dioxythiophene；
S5, one layer of indium tin oxide transparent conductive semiconductor is sputtered on the derivative polyethylene dioxythiophene layer of anti-polythiophene
Film, the anode with a thickness of 55 nanometers, as red quantum dot；
S6, red quantum dot anode is formed in using the material of high temperature resistant anti-oxidation and high transparency；
S7, under vacuum conditions, using magnetron sputtering technique, by the collective effect of voltage and magnetic field, with the inertia being ionized
Gas ion bombards target, causes target to be ejected in the form of ion, atom or molecule and is deposited on shape on substrate
At film, film is silicon oxide layer, reaches good insulation effect；
S8, using the manufacture craft of identical red quantum dot, the quantum dot of green and blue, and the anode of three kinds of colors is made
Between be separated by using insulating materials；
S9, finally setting thin-film encapsulation layer is packaged on QLED device, for preventing water or Oxygen permeation to the QLED device
Part causes damages, and thin-film encapsulation layer is realized using single-layer or multi-layer film, and material uses organic film or inorganic thin film, when thin
When the number of plies of film encapsulated layer is greater than three layers, using organic/inorganic composite film.
Embodiment two:
A kind of new packaging method of QLED, comprising the following steps:
S1, production are using ceramics as the bracket of material, layer printed circuit board, wherein being divided into four parts, a part is used for silver-plated, shape
At silver coating, remaining three parts is respectively the anode of red-green-blue；
S2, the spin coating polymethyl methacrylate on silver coating, the dielectric layer as quantum dot；
S3, using printing form, excitation can be issued into the quantum dot of feux rouges and be printed on silver coating, quantum dot layer is formed, in order to
The performance of QLED device is improved, the one kind such as hole injection layer, multilayer hole transmission layer, electronic barrier layer or electron injecting layer are increased
Or a variety of layers of structure；
S4, on quantum dot layer under the spin coating state of oxidation polythiophene of high stability derivative polyethylene dioxythiophene；
S5, one layer of indium tin oxide transparent conductive semiconductor is sputtered on the derivative polyethylene dioxythiophene layer of anti-polythiophene
Film, the anode with a thickness of 60 nanometers, as red quantum dot；
S6, red quantum dot anode is formed in using the material of high temperature resistant anti-oxidation and high transparency；
S7, under vacuum conditions, using magnetron sputtering technique, by the collective effect of voltage and magnetic field, with the inertia being ionized
Gas ion bombards target, causes target to be ejected in the form of ion, atom or molecule and is deposited on shape on substrate
At film, film is silicon oxide layer, reaches good insulation effect；
S8, using the manufacture craft of identical red quantum dot, the quantum dot of green and blue, and the anode of three kinds of colors is made
Between be separated by using insulating materials；
S9, finally setting thin-film encapsulation layer is packaged on QLED device, for preventing water or Oxygen permeation to the QLED device
Part causes damages, and thin-film encapsulation layer is realized using single-layer or multi-layer film, and material uses organic film or inorganic thin film, when thin
When the number of plies of film encapsulated layer is greater than three layers, using organic/inorganic composite film.
Embodiment three:
A kind of new packaging method of QLED, comprising the following steps:
S1, production are using ceramics as the bracket of material, layer printed circuit board, wherein being divided into four parts, a part is used for silver-plated, shape
At silver coating, remaining three parts is respectively the anode of red-green-blue；
S2, the spin coating polymethyl methacrylate on silver coating, the dielectric layer as quantum dot；
S3, using printing form, excitation can be issued into the quantum dot of feux rouges and be printed on silver coating, quantum dot layer is formed, in order to
The performance of QLED device is improved, the one kind such as hole injection layer, multilayer hole transmission layer, electronic barrier layer or electron injecting layer are increased
Or a variety of layers of structure；
S4, on quantum dot layer under the spin coating state of oxidation polythiophene of high stability derivative polyethylene dioxythiophene；
S5, one layer of indium tin oxide transparent conductive semiconductor is sputtered on the derivative polyethylene dioxythiophene layer of anti-polythiophene
Film, the anode with a thickness of 65 nanometers, as red quantum dot；
S6, red quantum dot anode is formed in using the material of high temperature resistant anti-oxidation and high transparency；
S7, under vacuum conditions, using magnetron sputtering technique, by the collective effect of voltage and magnetic field, with the inertia being ionized
Gas ion bombards target, causes target to be ejected in the form of ion, atom or molecule and is deposited on shape on substrate
At film, film is silicon oxide layer, reaches good insulation effect；
S8, using the manufacture craft of identical red quantum dot, the quantum dot of green and blue, and the anode of three kinds of colors is made
Between be separated by using insulating materials；
S9, finally setting thin-film encapsulation layer is packaged on QLED device, for preventing water or Oxygen permeation to the QLED device
Part causes damages, and thin-film encapsulation layer is realized using single-layer or multi-layer film, and material uses organic film or inorganic thin film, when thin
When the number of plies of film encapsulated layer is greater than three layers, using organic/inorganic composite film.
The beneficial effects of the present invention are: using vertical structure, by three primary colours sandwich package, the independently-powered control hair of three primary colours
Light, single QLED include three kinds of colors, and original Technical comparing, and horizontal occupied area is about original 1/3, to reach light mixing
It is uniform and bright in luster.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
A variety of variations, modification, replacement can be carried out to these embodiments without departing from the principles and spirit of the present invention by understanding
And modification, the scope of the present invention is defined by the appended.
Claims (5)
1. a kind of new packaging method of QLED, which comprises the following steps:
S1, production are using ceramics as the bracket of material, layer printed circuit board, wherein being divided into four parts, a part is used for silver-plated, shape
At silver coating, remaining three parts is respectively the anode of red-green-blue；
S2, the spin coating polymethyl methacrylate on silver coating, the dielectric layer as quantum dot；
S3, using printing form, excitation can be issued into the quantum dot of feux rouges and be printed on silver coating, quantum dot layer is formed；
S4, on quantum dot layer under the spin coating state of oxidation polythiophene of high stability derivative polyethylene dioxythiophene；
S5, one layer of indium tin oxide transparent conductive semiconductor is sputtered on the derivative polyethylene dioxythiophene layer of anti-polythiophene
Film, the anode with a thickness of 55-65 nanometers, as red quantum dot；
S6, red quantum dot anode is formed in using the material of high temperature resistant anti-oxidation and high transparency；
S7, under vacuum conditions, using magnetron sputtering technique, by the collective effect of voltage and magnetic field, with the inertia being ionized
Gas ion bombards target, causes target to be ejected in the form of ion, atom or molecule and is deposited on shape on substrate
At film；
S8, using the manufacture craft of identical red quantum dot, the quantum dot of green and blue is made；
S9, finally setting thin-film encapsulation layer is packaged on QLED device.
2. the new packaging method of QLED according to claim 1 a kind of, which is characterized in that in the S3, increase hole
The one or more layers of structure such as implanted layer, multilayer hole transmission layer, electronic barrier layer or electron injecting layer.
3. the new packaging method of QLED according to claim 1 a kind of, which is characterized in that in the S7, film is oxygen
SiClx layer.
4. the new packaging method of QLED according to claim 1 a kind of, which is characterized in that in the S8, three kinds of colors
Anode between be separated by using insulating materials.
5. the new packaging method of QLED according to claim 1 a kind of, which is characterized in that in the S9, thin-film package
Layer realizes that material uses organic film or inorganic thin film, when the number of plies of thin-film encapsulation layer is greater than using single-layer or multi-layer film
At three layers, using organic/inorganic composite film.
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| CN201910020411.XA CN109768175A (en) | 2019-01-09 | 2019-01-09 | A kind of new packaging method of QLED |
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| CN201910020411.XA CN109768175A (en) | 2019-01-09 | 2019-01-09 | A kind of new packaging method of QLED |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1293425A (en) * | 1994-12-13 | 2001-05-02 | 普林斯顿大学理事会 | Multi colour display device |
| US20090090903A1 (en) * | 2007-10-08 | 2009-04-09 | Samsung Electronics Co., Ltd. | Cmos image sensor having thiophene derivatives |
| CN102169885A (en) * | 2010-01-29 | 2011-08-31 | 日本冲信息株式会社 | Semiconductor light emitting device and image forming apparatus |
| CN106856226A (en) * | 2016-12-19 | 2017-06-16 | Tcl集团股份有限公司 | A kind of light emitting diode with quantum dots device and preparation method thereof |
| CN109244259A (en) * | 2018-09-18 | 2019-01-18 | 厦门多彩光电子科技有限公司 | A kind of QD-LED packaging body and preparation method thereof |
-
2019
- 2019-01-09 CN CN201910020411.XA patent/CN109768175A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1293425A (en) * | 1994-12-13 | 2001-05-02 | 普林斯顿大学理事会 | Multi colour display device |
| US20090090903A1 (en) * | 2007-10-08 | 2009-04-09 | Samsung Electronics Co., Ltd. | Cmos image sensor having thiophene derivatives |
| CN102169885A (en) * | 2010-01-29 | 2011-08-31 | 日本冲信息株式会社 | Semiconductor light emitting device and image forming apparatus |
| CN106856226A (en) * | 2016-12-19 | 2017-06-16 | Tcl集团股份有限公司 | A kind of light emitting diode with quantum dots device and preparation method thereof |
| CN109244259A (en) * | 2018-09-18 | 2019-01-18 | 厦门多彩光电子科技有限公司 | A kind of QD-LED packaging body and preparation method thereof |
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Address after: 362200 first floor, building 5, Hengdali business center, Wutan village, Chidian Town, Jinjiang City, Quanzhou City, Fujian Province Applicant after: Quanzhou Kangdian Photoelectric Technology Co.,Ltd. Address before: 362212 floor 5, building 7, Hengdali business center, Wutan village, Chidian Town, Jinjiang City, Quanzhou City, Fujian Province Applicant before: QUANZHOU CAMLED PHOTOELECTRICITY Co.,Ltd. |
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Application publication date: 20190517 |
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