CN109742187B - Method for manufacturing multi-section solar cell - Google Patents
Method for manufacturing multi-section solar cell Download PDFInfo
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- CN109742187B CN109742187B CN201811638451.2A CN201811638451A CN109742187B CN 109742187 B CN109742187 B CN 109742187B CN 201811638451 A CN201811638451 A CN 201811638451A CN 109742187 B CN109742187 B CN 109742187B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims description 12
- 230000031700 light absorption Effects 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 28
- 238000002360 preparation method Methods 0.000 claims description 6
- 238000010521 absorption reaction Methods 0.000 claims description 5
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 238000004151 rapid thermal annealing Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 239000010408 film Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention belongs to the technical field of electronic component manufacturing, and relates to a multi-section solar cell manufacturing method which comprises the steps of loading an InP substrate into a growth chamber of an MBE system, heating to remove a residual oxide layer on the surface of the substrate, and then sequentially forming a buffer layer, a bottom electrode, a light absorption layer, a top section, an emitter and a top electrode, wherein the forbidden bandwidth of the light absorption layer is sequentially increased from bottom to top. The light absorption layer with gradually changed components can greatly enhance the light absorption capacity of sunlight in different wave bands, and the solar cell with the structure can achieve high photoelectric conversion efficiency.
Description
Technical Field
The invention relates to the technical field of electronic component manufacturing, in particular to a method for manufacturing a multi-section solar cell.
Background
Solar cells have received a great deal of attention as a representative of renewable energy sources. At present, most commercialized monocrystalline silicon, polycrystalline silicon and thin-film solar cells adopt a single P-N node structure and can only absorb and convert a small part of the full spectrum of a solar spectrum, so that the photoelectric conversion efficiency is generally not high (lower than 30%). To further improve cell efficiency, we can move attention to multi-segment solar cells. As the name suggests, the light absorption layers with band gaps gradually changed from large to small are sequentially arranged on the solar cell from top to bottom, so that the solar spectrum is sequentially absorbed from short wavelength to long wavelength, and the photoelectric conversion efficiency is greatly improved.
A multijunction solar cell generally consists of a bottom electrode, a compositionally graded light absorbing layer, an emitter layer, and a top electrode. These layers of material are typically deposited on the substrate surface by means of epitaxial growth. Each layer must have a mismatch with the substrate lattice constant < 10%. On the basis, each layer of material has sufficient freedom to adjust the forbidden band width of the material. On this basis, the carrier type and carrier concentration of each thin film layer are determined by appropriate doping. To meet these requirements, three-component and four-component materials are generally selected because the degree of freedom in adjustment of the one-component and two-component film components is too small. This presents certain difficulties for material growth, since film growth is limited by the lack of mutual solubility, especially for four-component materials.
Disclosure of Invention
The invention mainly aims to provide a method for manufacturing a multi-section solar cell, so that the solar cell has good light absorption capacity on sunlight of different wave bands, and the photoelectric conversion efficiency is improved.
The invention realizes the purpose through the following technical scheme: a method of fabricating a multijunction solar cell, the steps comprising:
① InP substrate is loaded into the growth chamber of MBE system, and the vacuum degree is required to be more than 1 × 10-6torr；
Heating the substrate to 500-700 ℃ to remove the residual oxide layer on the surface of the substrate;
thirdly, reducing the deoxidizing temperature by 10-200 ℃, and growing a buffer layer matched with the InP substrate in a lattice mode;
fourthly, preparing a heavily doped InGaAs layer as a bottom electrode;
⑤ sequentially preparing n-layer light absorption layer of InGaAsSb four-component, the composition of the n-layer is AlxnGa1- xnAsynSb1-yn，xnAnd ynThe following relationship is satisfied,
0.53<x1<x2<…<xn，1>y1>y2>…>yn；
⑥ preparation of AlxGa1-xAsySb1-yA top section of material;
⑦ preparation of AlxGa1-xAsySb1-yAn emitter of material;
⑧ preparation of heavily doped In0.53Ga0.47As material As top electrode;
and ninthly, after the deposition growth is finished, respectively manufacturing upper electrodes on the front surface and the back surface of the epitaxial wafer, and performing rapid thermal annealing to form ohmic contact.
Specifically, the buffer layer is made of In0.53Ga0.47As or In0.52Al0.48As。
Specifically, the bottom electrode, the light absorption layer, the top layer section and the absorption layer are Si heavily doped N-type layers, and the emitter and the top electrode are Be heavily doped P-type layers.
Specifically, the bottom electrode, the light absorption layer, the top layer section and the absorption layer are Be heavily doped P-type layers, and the emitter and the top electrode are Si heavily doped N-type layers.
Further, it is characterized byThe composition of the AlGaAsSb material of the step ⑥ and the step ⑦ is AlxGa1-xAsySb1-yAnd x and y satisfy the following relationship,
xtop roof>xHair-like device>And 0.6, wherein the x top represents the x value of the top layer section, and the x table represents the x value of the emitter.
Further, the AlGaAsSb material is grown using a superlattice-like method.
Specifically, the top electrode is Be heavily doped In0.53Ga0.47As material.
By adopting the technical scheme, the technical scheme of the invention has the beneficial effects that:
the invention adopts the N-type light absorption layer with gradually changed components, which can greatly enhance the light absorption capability of sunlight in different wave bands, and the solar cell with the structure can achieve high photoelectric conversion efficiency.
Detailed Description
The present invention will be described in further detail with reference to specific examples.
Example 1:
① InP substrate is loaded into the growth chamber of MBE system, and the vacuum degree is required to be more than 1 × 10-6torr；
Heating the substrate to 500-700 ℃ to remove the residual oxide layer on the surface of the substrate;
thirdly, reducing the temperature by 10-200 ℃ on the basis of the deoxidation temperature, and growing a buffer layer;
si is selected as a doping source, and an N-type bottom electrode of heavily doped InGaAs is prepared;
gradually increasing the beam current of In, reducing the beam current of As and reducing the beam current of Si, and sequentially preparing an N-type light absorption layer of an N layer with four components of InGaAsSb;
⑥ preparing Al by using Si as doping sourcexNGa1-xNAsyNSb1-yNAn N-type top section of material;
⑦ the beam current of Al is increased,reducing As beam current, selecting Be As doping source to prepare AlxPGa1-xPAsyPP1-yPAn emitter of material;
selecting Be as a heavy doping source, and using a heavy doping InGaAs material as a P-type top electrode;
and ninthly, after the deposition growth is finished, respectively manufacturing upper electrodes on the front surface and the back surface of the epitaxial wafer, and performing rapid thermal annealing to form ohmic contact.
The structure formed by the manufacturing method sequentially comprises the following steps from the bottom to the top of the InP substrate:
1) buffer layer: the purpose is to flatten the deoxidized InP substrate surface to prepare for the subsequent film growth. Requiring that the layer be lattice constant matched to InP, we select three components of In0.53Ga0.47As or In0.52Al0.48As acts As a buffer layer.
2) N-type bottom electrode: in with Si heavily doped0.53Ga0.47As material is used As a bottom contact layer of the battery to realize the injection of bottom current carriers.
3) N-type light-absorbing layer: heavily doped Si AlxnGa1-xnAsynSb1-ynThe forbidden band width of the material is required to be increased from bottom to top, and the lattice constant is required to be consistent with that of InP. 0.53<x1<x2<…<xn，1>y1>y2>…>yn。
xnAnd ynSatisfies the relationship:
4) n-type top layer section: heavily doped Si AlxNGa1-xNAsyNSb1-yNThe material is required to have a forbidden band width of more than 1.6eV, namely, the Al component xTop roof>0.6。
The lattice constant is required to be consistent with that of InP, so x and y satisfy the following relationship,
5)a P-type emitter: be heavily doped AlxPGa1-xPAsyPSb1-yPThe material is a P-type region of the solar cell.
x and y satisfy the following relationship,
for the N-type light absorption layer and the P-type emitter, matching with InP lattice constant is required, and the forbidden bandwidth x of the P-type emitterPIs larger than the forbidden band width x of the N-type light absorption layerNSo that Al component xHair-like device>xTop roof>0.6。
The N-type light absorption layer and the P-type emitter are both grown by adopting a superlattice-like method so as to overcome the limitation of no mutual dissolution gap of four-component materials. The method is specifically divided into two schemes:
the first method comprises the following steps: design of AlxGa1-xAs thickness d1, AlxGa1-xThe Sb thickness is d2, d1+ d2 is a period, and the components of As and Sb can be accurately regulated and controlled by adjusting the values of d1 and d 2.
And the second method comprises the following steps: design of AlAsySb1-yThickness d1, GaAsySb1-yThe thickness is d2, d1+ d2 is a period, and the Al and Ga components can be accurately regulated and controlled by adjusting the values of d1 and d 2.
The two schemes effectively avoid competition between As and Sb or Al and Ga in the process of material growth, and thoroughly solve the limitation of insoluble gaps on material growth.
6) P-type top electrode: be heavily doped In0.52Ga0.48As material is used As a contact layer of the P-type region to realize the injection of top holes.
Example 2:
the difference from example 1 is that: the bottom electrode, the light absorption layer, the top layer node and the absorption layer are Be heavily doped P-type layers, and the emitter and the top electrode are Si heavily doped N-type layers.
The light absorption layer with gradually changed components can greatly enhance the light absorption capacity of sunlight of different wave bands, and the solar cell with the structure can reach more than 40 percent of photoelectric conversion efficiency by taking three light absorption layers as an example. The higher the number of nodes, the higher the theoretical photoelectric conversion efficiency.
What has been described above are merely some embodiments of the present invention. It will be apparent to those skilled in the art that various changes and modifications can be made without departing from the inventive concept thereof, and these changes and modifications can be made without departing from the spirit and scope of the invention.
Claims (6)
1. A method of fabricating a multi-segment solar cell, comprising the steps of:
① InP substrate is loaded into the growth chamber of MBE system, and the vacuum degree is required to be more than 1 × 10-6torr；
Heating the substrate to 500-700 ℃ to remove the residual oxide layer on the surface of the substrate;
thirdly, reducing the deoxidizing temperature by 10-200 ℃, and growing a buffer layer matched with the InP substrate in a lattice mode;
fourthly, preparing a heavily doped InGaAs layer as a bottom electrode;
⑤ sequentially preparing n-layer light absorption layer of InGaAsSb four-component, the composition of the n-layer is AlxnGa1-xnAsynSb1-ynXn and yn satisfy the following relationship,
0.53<x1<x2<…<xn，1>y1>y2>…>yn；
⑥ preparation of AlxGa1-xAsySb1-yA top section of material;
⑦ preparation of AlxGa1-xAsySb1-yAn emitter of material;
⑧ preparation of heavily doped In0.53Ga0.47As material As top electrode;
and ninthly, after the deposition growth is finished, respectively manufacturing upper electrodes on the front surface and the back surface of the epitaxial wafer, and performing rapid thermal annealing to form ohmic contact.
2. The method of fabricating a multinode solar cell of claim 1, wherein: the buffer layer is made of In0.53Ga0.47As or In0.52Al0.48As。
3. The method of fabricating a multinode solar cell of claim 1, wherein: the bottom electrode, the light absorption layer, the top layer node and the absorption layer are Si heavily doped N-type layers, and the emitter and the top electrode are Be heavily doped P-type layers.
4. The method of fabricating a multinode solar cell of claim 1, wherein: the bottom electrode, the light absorption layer, the top layer node and the absorption layer are Be heavily doped P-type layers, and the emitter and the top electrode are Si heavily doped N-type layers.
5. The method of claim 3 or 4, wherein the AlGaAsSb material of the steps ⑥ and ⑦ has Al as a componentxGa1-xAsySb1-yAnd x and y both satisfy the following relationship,
xhair-like device>xTop roof>0.6, wherein xTop roofThe value of x, representing the top level sectionHair-like deviceRepresenting the value of x of the emitter.
6. The method of fabricating a multinode solar cell of claim 5, wherein: the AlGaAsSb material is grown using a superlattice-like method.
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