CN109728570B - Circuit for suppressing surge current - Google Patents
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Abstract
本发明揭露一种用以抑制浪涌电流的电路,包括一开关单元、一回馈控制单元、一电压耦合单元及一参考信号产生单元。开关单元的第一端用以耦接至一电压源。开关单元的一第二端用以耦接至一第一电容。回馈控制单元的输出端耦接至开关单元的第三端。电压耦合单元的输入埠耦接至开关单元的第二端。电压耦合单元的输出埠耦接至回馈控制单元的回馈信号输入端。参考信号产生单元耦接至回馈控制单元的参考信号输入端。
The present invention discloses a circuit for suppressing surge current, comprising a switch unit, a feedback control unit, a voltage coupling unit and a reference signal generating unit. A first end of the switch unit is used to couple to a voltage source. A second end of the switch unit is used to couple to a first capacitor. An output end of the feedback control unit is coupled to a third end of the switch unit. An input port of the voltage coupling unit is coupled to the second end of the switch unit. An output port of the voltage coupling unit is coupled to a feedback signal input end of the feedback control unit. The reference signal generating unit is coupled to the reference signal input end of the feedback control unit.
Description
技术领域technical field
本发明是有关于一种用以抑制浪涌电流的电路。The present invention relates to a circuit for suppressing inrush current.
背景技术Background technique
一般而言,对于大部分的电子设备,内部运作的线路是使用直流电当作电源。为求直流电供电稳定性,线路中需要包含储能元件,而最常见的储能元件即电容器。在开机(或电源接通)时,因电容器初始电压为零,近似短路,故会产生很大的暂态电流,即所谓浪涌电流(Inrush current)。浪涌电流可能引发杂讯,甚至导致电子设备内部线路误动作或造成内部零件失效故障。Generally speaking, for most electronic equipment, the inner working circuit is powered by direct current. In order to obtain the stability of the DC power supply, the circuit needs to contain energy storage elements, and the most common energy storage element is the capacitor. When the power is turned on (or the power is turned on), since the initial voltage of the capacitor is zero, it is approximately short-circuited, so a large transient current, the so-called inrush current, will be generated. Inrush current may cause noise, and even lead to malfunction of internal circuits of electronic equipment or failure of internal components.
现有技术中,利用控制电子负载开关的闸-源极电压(Vgs)上升斜率,以降低开关阻抗由极大转换成接近零的速度,达成降低浪涌电流的目的。但因为半导体电子开关的特性,在闸-源极电压上升过程中,开关阻抗并非线性下降。实际量测现有技术电路所得的波图如图8所示,左侧纵轴处箭头1标示的是电子开关的闸-源极电压波形,箭头2标示的是负载端的电容的电压波形,箭头4标示的是负载端的电容的电流波形。横轴座标为时间,一大格刻度为20ms。对于电子开关的闸-源极电压波形而言,纵轴座标为电压,一大格刻度为2.5V。对于负载端的电容的电压波形而言,纵轴座标为电压,一大格刻度为2V。对于负载端的电容的电流波形而言,纵轴座标为电流,一大格刻度为10A。In the prior art, the rising slope of the gate-source voltage (Vgs) of the electronic load switch is controlled to reduce the speed at which the switch impedance changes from a maximum value to a near-zero value, so as to achieve the purpose of reducing the inrush current. However, due to the characteristics of semiconductor electronic switches, the switch impedance does not decrease linearly during the gate-source voltage rise. The waveform obtained by actually measuring the prior art circuit is shown in Figure 8. The
由图中可看出,初始闸-源极电压尚未达到阈值(Threshold)时,阻抗几乎维持在极大值,因此这段时间无任何电流为负载端电容充电。当闸-源极电压到达阈值时,闸-源极电压些微上升(几毫伏至几百毫伏),阻抗即会急遽下降,此时为主要负载电容充电时间,浪涌电流在此时发生,电容通常在此时间区间充电完毕。闸-源极电压超出阈值,此时电子开关阻抗持续下降至近乎为零。也就是说,现有技术中电容的充电时间很短,因而无法有效抑制浪涌电流(浪涌电流的峰值高达48.2A)。As can be seen from the figure, when the initial gate-source voltage has not yet reached the threshold (Threshold), the impedance is almost maintained at a maximum value, so there is no current to charge the load capacitor during this period. When the gate-source voltage reaches the threshold, the gate-source voltage rises slightly (several millivolts to hundreds of millivolts), and the impedance drops sharply. At this time, it is the charging time for the main load capacitor, and the surge current occurs at this time. , the capacitor is usually charged in this time interval. The gate-source voltage exceeds the threshold, at which point the electronic switch impedance continues to drop to near zero. That is to say, the charging time of the capacitor in the prior art is very short, so the inrush current cannot be effectively suppressed (the peak value of the inrush current is as high as 48.2A).
为求拉长电容充电的时间,通常会导致整体电路启动速度变慢。且因为电子开关的阈值电压会有误差值,因而增加了电路最佳化设计的难度。In order to prolong the charging time of the capacitor, the overall circuit startup speed is usually slower. And because the threshold voltage of the electronic switch has an error value, the difficulty of circuit optimization design is increased.
因此,如何提供一种用以抑制浪涌电流的电路是一个重要的课题。Therefore, how to provide a circuit for suppressing the surge current is an important issue.
发明内容SUMMARY OF THE INVENTION
本发明实施例揭露一种用以抑制浪涌电流的电路,包括一开关单元、一回馈控制单元、一电压耦合单元以及一参考信号产生单元。开关单元具有一第一端、一第二端及一第三端。开关单元的第一端用以耦接至一电压源。开关单元的一第二端用以耦接至一第一电容。回馈控制单元具有一回馈信号输入端、一参考信号输入端及一输出端。回馈控制单元的输出端耦接至开关单元的第三端。电压耦合单元具有一输入埠及一输出埠。电压耦合单元的输入埠耦接至开关单元的第二端。电压耦合单元的输出埠耦接至回馈控制单元的回馈信号输入端。参考信号产生单元耦接至回馈控制单元的参考信号输入端。An embodiment of the present invention discloses a circuit for suppressing surge current, which includes a switch unit, a feedback control unit, a voltage coupling unit, and a reference signal generating unit. The switch unit has a first end, a second end and a third end. The first end of the switch unit is coupled to a voltage source. A second end of the switch unit is coupled to a first capacitor. The feedback control unit has a feedback signal input end, a reference signal input end and an output end. The output end of the feedback control unit is coupled to the third end of the switch unit. The voltage coupling unit has an input port and an output port. The input port of the voltage coupling unit is coupled to the second end of the switch unit. The output port of the voltage coupling unit is coupled to the feedback signal input end of the feedback control unit. The reference signal generating unit is coupled to the reference signal input terminal of the feedback control unit.
以下结合附图和具体实施例对本发明进行详细描述,但不作为对本发明的限定。The present invention is described in detail below with reference to the accompanying drawings and specific embodiments, but is not intended to limit the present invention.
附图说明Description of drawings
图1绘示依据本发明第一实施例的用以抑制浪涌电流的电路的方块图。FIG. 1 is a block diagram illustrating a circuit for suppressing inrush current according to a first embodiment of the present invention.
图2绘示依据本发明第二实施例的用以抑制浪涌电流的电路的方块图。FIG. 2 is a block diagram of a circuit for suppressing inrush current according to a second embodiment of the present invention.
图3绘示依据本发明第三实施例的用以抑制浪涌电流的电路的方块图。3 is a block diagram illustrating a circuit for suppressing inrush current according to a third embodiment of the present invention.
图4绘示依据本发明第四实施例的用以抑制浪涌电流的电路的方块图。4 is a block diagram illustrating a circuit for suppressing inrush current according to a fourth embodiment of the present invention.
图5绘示依据本发明第五实施例的用以抑制浪涌电流的电路的方块图。5 is a block diagram illustrating a circuit for suppressing inrush current according to a fifth embodiment of the present invention.
图6绘示依据本发明第六实施例的用以抑制浪涌电流的电路的方块图。6 is a block diagram illustrating a circuit for suppressing inrush current according to a sixth embodiment of the present invention.
图7绘示依据本发明第三实施例的用以抑制浪涌电流的电路的量测波形图。FIG. 7 is a measurement waveform diagram of a circuit for suppressing inrush current according to a third embodiment of the present invention.
图8绘示依据现有技术的电路的量测波形图。FIG. 8 is a measurement waveform diagram of a circuit according to the prior art.
其中,附图标记where the reference number
1a~1f:电路1a~1f: Circuit
12:开关单元12: Switch unit
14:回馈控制单元14: Feedback control unit
16:电压耦合单元16: Voltage coupling unit
18:参考信号产生单元18: Reference signal generation unit
Vs:电压源Vs: voltage source
C1:第一电容C1: first capacitor
C2:第二电容C2: second capacitor
Q1n:N型金属氧化物半导体场效电晶体Q1n: N-type metal oxide semiconductor field effect transistor
Q1p:P型金属氧化物半导体场效电晶体Q1p: P-type metal oxide semiconductor field effect transistor
Q2:PNP型双极性电晶体Q2: PNP type bipolar transistor
Q3:NPN型双极性电晶体Q3: NPN type bipolar transistor
D1:二极管D1: Diode
R1:第一电阻R1: first resistor
R2:第二电阻R2: second resistor
R3:第三电阻R3: third resistor
R4:第四电阻R4: Fourth resistor
R5:第五电阻R5: Fifth resistor
R6:第六电阻R6: sixth resistor
R7:第七电阻R7: seventh resistor
Rs1:第一分压电阻Rs1: first divider resistor
Rs2:第二分压电阻Rs2: second voltage divider resistor
Rs3:第三分压电阻Rs3: The third voltage divider resistor
Rs4:第四分压电阻Rs4: Fourth divider resistor
VDD:驱动电压源VDD: driving voltage source
Voffset:补偿电压源Voffset: offset voltage source
Is:电流源Is: current source
OP:运算放大器OP: Operational Amplifier
20:开关保护单元20: Switch protection unit
Rp:保护电阻Rp: protection resistance
ZD1:第一齐纳二极管ZD1: First Zener Diode
ZD2:第二齐纳二极管ZD2: Second Zener Diode
具体实施方式Detailed ways
下面结合附图和具体实施例对本发明技术方案进行详细的描述,以更进一步了解本发明的目的、方案及功效,但并非作为本发明所附权利要求保护范围的限制。The technical solution of the present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments, so as to further understand the purpose, solution and effect of the present invention, but it is not intended to limit the protection scope of the appended claims of the present invention.
请参照图1,图1绘示依据本发明第一实施例的用以抑制浪涌电流的电路的方块图。电路1a包括一开关单元12、一回馈控制单元14、一电压耦合单元16以及一参考信号产生单元18。Please refer to FIG. 1 . FIG. 1 is a block diagram illustrating a circuit for suppressing inrush current according to a first embodiment of the present invention. The circuit 1 a includes a
开关单元12具有一第一端、一第二端及一第三端。开关单元12的第一端用以耦接至一电压源Vs。开关单元12的第二端用以耦接至第一电容C1。The
回馈控制单元14具有一回馈信号输入端、一参考信号输入端及一输出端。回馈控制单元14的输出端耦接至开关单元12的第三端,以控制开关单元12开启或关闭。The
电压耦合单元16具有一输入埠及一输出埠。电压耦合单元16的输入埠耦接至开关单元12的第二端,以获得回馈信号。电压耦合单元16的输出埠耦接至回馈控制单元14的回馈信号输入端,以将回馈信号提供给回馈控制单元14。The
参考信号产生单元18耦接至回馈控制单元14的参考信号输入端,以将产生的参考信号提供给回馈控制单元14。The reference
在一些实施例中,电压源Vs例如是一外部电源供应器,电路1a例如是设置于一电子设备中,用以保护接上外部电源供应器的电子设备。当外部电源供应器开启时,电路1a即会开始运作而限制浪涌电流的峰值大小,避免电子设备的内部零件受损。In some embodiments, the voltage source Vs is, for example, an external power supply, and the circuit 1a is disposed in an electronic device, for example, to protect the electronic device connected to the external power supply. When the external power supply is turned on, the circuit 1a starts to operate to limit the peak value of the inrush current to prevent damage to the internal parts of the electronic device.
在其他实施例中,电路1a例如是设置于一电源供应器内,用以保护耦接于电源供应器的一电子设备。相似地,当电源供应器开启,电路1a即会开始运作而限制浪涌电流的峰值大小,避免电子设备的内部零件受损。In other embodiments, the circuit 1a is disposed in a power supply, for example, to protect an electronic device coupled to the power supply. Similarly, when the power supply is turned on, the circuit 1a starts to operate to limit the peak value of the inrush current to prevent damage to the internal parts of the electronic device.
电路1a的运作原理是通过电压耦合单元16将第一电容C1的电压(端电压值)做为回馈信号耦合至回馈控制单元14。回馈控制单元14依据回馈信号与参考信号,输出控制信号,以控制开关单元12开启或关闭。通过控制开关单元12开启或关闭,控制第一电容C1的电压的上升斜率,而达到抑制浪涌电流的效果。The operation principle of the circuit 1 a is to couple the voltage (terminal voltage value) of the first capacitor C1 to the
请参照图2,图2绘示依据本发明第二实施例的用以抑制浪涌电流的电路的方块图。电路1b与电路1a类似,不同之处在于电压耦合单元16的输入埠更耦接至开关单元12的第一端。在这个实施例中,电压耦合单元16是将开关单元12的第一端与第二端的跨压(即电压差)做为回馈信号耦合至回馈控制单元14。然而,电路1b与电路1a的基本运作原理仍是类似的,皆是通过取得回馈信号以控制开关单元12达到控制第一电容C1的电压上升斜率。底下将举数个具体实施例,以进一步说明本发明的原理及细节。Please refer to FIG. 2 , which is a block diagram of a circuit for suppressing inrush current according to a second embodiment of the present invention. The circuit 1b is similar to the circuit 1a, except that the input port of the
请参照图3,图3绘示依据本发明第三实施例的用以抑制浪涌电流的电路的方块图。电路1c与电路1a类似,是以第一电容C1的电压做为回馈信号。Please refer to FIG. 3 , which is a block diagram of a circuit for suppressing inrush current according to a third embodiment of the present invention. The
开关单元12包括一N型金属氧化物半导体场效电晶体Q1n以及一二极管D1。N型金属氧化物半导体场效电晶体Q1n的一汲极(drain)做为开关单元12的第一端用以耦接至电压源Vs。N型金属氧化物半导体场效电晶体Q1n的一源极(source)做为开关单元12的第二端用以耦接至第一电容C1。N型金属氧化物半导体场效电晶体Q1n的一闸极(gate)做为开关单元12的第三端耦接至回馈控制单元14。二极管D1耦接于N型金属氧化物半导体场效电晶体Q1n的汲极与源极之间,以防止N型金属氧化物半导体场效电晶体Q1n受损。The
参考信号产生单元18包括一第二电容C2以及一第一电阻R1。第二电容C2的一第一端接地,第二电容C2的一第二端耦接至回馈控制单元14的参考信号输入端。第一电阻R1的一第一端耦接至一驱动电压源VDD,第一电阻R1的一第二端耦接至第二电容C2的第二端。在本实施例中,参考信号产生单元18是通过以驱动电压源VDD对第二电容C2进行充电,并以第二电容C2的电压做为参考信号输出。换言之,参考信号是一斜率为正的电压波形。The reference
回馈控制单元14包括一PNP型双极性电晶体Q2、一NPN型双极性电晶体Q3、一第二电阻R2以及一第三电阻R3。The
PNP型双极性电晶体Q2的一射极(emitter)耦接至驱动电压源VDD。PNP型双极性电晶体的一集极(collector)通过第二电阻R2耦接至开关单元12的第三端。PNP型双极性电晶体Q2的一基极(base)耦接至第三电阻R3的一第一端。An emitter of the PNP bipolar transistor Q2 is coupled to the driving voltage source VDD. A collector of the PNP bipolar transistor is coupled to the third terminal of the
NPN型双极性电晶体Q3的一集极耦接至第三电阻R3的一第二端。NPN型双极性电晶体Q3的一射极耦接至电压耦合单元16的输出埠。NPN型双极性电晶体Q3的一基极耦接至参考信号产生单元18。A collector of the NPN bipolar transistor Q3 is coupled to a second end of the third resistor R3. An emitter of the NPN bipolar transistor Q3 is coupled to the output port of the
电压耦合单元16是一条导线,将第一电容C1的电压直接耦合至回馈控制单元14的回馈信号输入端。The
本实施例的详细运作原理如下所述。The detailed operation principle of this embodiment is as follows.
在不失一般性的情况下,电压源Vs被开启时,假设第一电容C1的初始电压为零。参考信号产生单元18因驱动电压源VDD对第二电容C2充电而开始输出斜率为正的电压波形,即参考信号。参考信号的电压值由零往上增加时,NPN型双极性电晶体Q3先导通,PNP型双极性电晶体Q2的基极电压下降而使PNP型双极性电晶体Q2导通。N型金属氧化物半导体场效电晶体Q1n的闸极电压上升而连带导通,即开关单元12开启。第一电容C1开始充电,使得第一电容C1的电压增加。Without loss of generality, it is assumed that the initial voltage of the first capacitor C1 is zero when the voltage source Vs is turned on. The reference
当第一电容C1的电压上升斜率超过参考信号的上升斜率时,PNP型双极性电晶体Q3会关闭,而连带使得NPN型双极性电晶体Q2关闭,进而限制N型金属氧化物半导体场效电晶体Q1n的闸极电压。由于N型金属氧化物半导体场效电晶体Q1n的阻抗会受到闸极与源极间的电压差(即闸-源极电压)影响,故当N型金属氧化物半导体场效电晶体Q1n的闸极电压上升量小于第一电容C1的电压上升量时,会使得N型金属氧化物半导体场效电晶体Q1n的阻抗变大,进而使得第一电容C1的电压上升速度下降。当参考信号的电压值超过电压源Vs的电压值时,NPN型双极性电晶体Q3、PNP型双极性电晶体Q2与N型金属氧化物半导体场效电晶体Q1n会接连完全导通。When the rising slope of the voltage of the first capacitor C1 exceeds the rising slope of the reference signal, the PNP bipolar transistor Q3 will be turned off, and the NPN bipolar transistor Q2 will be turned off, thereby limiting the NMOS field The gate voltage of the effect transistor Q1n. Since the impedance of the NMOS transistor Q1n is affected by the voltage difference between the gate and the source (ie, the gate-source voltage), when the gate of the NMOS transistor Q1n is When the voltage rise of the first capacitor C1 is smaller than the voltage rise of the first capacitor C1 , the impedance of the NMOS transistor Q1n increases, and the voltage rise speed of the first capacitor C1 decreases. When the voltage value of the reference signal exceeds the voltage value of the voltage source Vs, the NPN bipolar transistor Q3, the PNP bipolar transistor Q2 and the NMOS field effect transistor Q1n will be completely turned on in succession.
因此,藉由回馈第一电容C1的电压至回馈控制单元14,并和参考信号产生单元18产生的参考信号的电压波形比较,就能够控制开关单元12的动作,进而控制第一电容C1的电压上升斜率,而达到抑制浪涌电流的效果。Therefore, by feeding back the voltage of the first capacitor C1 to the
请参照图4,图4绘示依据本发明第四实施例的用以抑制浪涌电流的电路的方块图。电路1d与电路1c类似,不同之处在于参考信号产生单元18。Please refer to FIG. 4 . FIG. 4 is a block diagram illustrating a circuit for suppressing inrush current according to a fourth embodiment of the present invention. The
在第四实施例中,参考信号产生单元18包括一第二电容C2以及一电流源Is。第二电容C2的一第一端接地,第二电容C2的一第二端耦接至回馈控制单元14的参考信号输入端。电流源Is耦接至第二电容C2的第二端。换言之,本实施例是以电流源Is对第二电容C2充电以产生参考信号。In the fourth embodiment, the reference
请参照图5,图5绘示依据本发明第五实施例的用以抑制浪涌电流的电路的方块图。电路1e与电路1b类似,是以开关单元12的第一端与第二端之间的跨压做为回馈信号。第五实施例是第二实施例的进一步具体实施例,其细节如下所述。Please refer to FIG. 5 , which is a block diagram of a circuit for suppressing inrush current according to a fifth embodiment of the present invention. The circuit 1e is similar to the circuit 1b, and uses the voltage across the first terminal and the second terminal of the
参考信号产生单元18包括一第二电容C2以及一第一电阻R1。第二电容C2的一第一端耦接至一驱动电压源VDD。第二电容C2的一第二端耦接至第一电阻R1的一第一端及回馈控制单元14的参考信号输入端。第一电阻R1的一第二端接地。The reference
回馈控制单元14包括一PNP型双极性电晶体Q2以及一NPN型双极性电晶体Q3。PNP型双极性电晶体Q2的一射极耦接至驱动电压源VDD。PNP型双极性电晶体Q2的一集极通过一第二电阻R2耦接至开关单元12的第三端。PNP型双极性电晶体Q2的一基极耦接至一第三电阻R3的一第一端。The
NPN型双极性电晶体Q3的一集极耦接至第三电阻R3的一第二端。NPN型双极性电晶体Q3的一射极做为回馈控制单元14的参考信号输入端耦接至参考信号产生单元18。NPN型双极性电晶体Q3的一基极做为回馈控制单元14的回馈信号输入端耦接至电压耦合单元16的输出埠。A collector of the NPN bipolar transistor Q3 is coupled to a second end of the third resistor R3. An emitter of the NPN bipolar transistor Q3 is used as a reference signal input terminal of the
电压耦合单元16包括一运算放大器OP。运算放大器OP的一非反向输入端通过一第四电阻R4耦接至开关单元12的第一端。运算放大器OP的一反向输入端通过一第五电阻R5耦接至开关单元12的第二端。运算放大器OP的一输出端通过一第六电阻R6耦接至运算放大器OP的反向输入端。运算放大器OP的输出端做为电压耦合单元16的输出埠耦接至回馈控制单元14的NPN型双极性电晶体Q3的基极。另外,运算放大器OP的非反向输入端更通过一第七电阻R7耦接至一补偿电压源Voffset。The
在第五实施例中,由于初始时开关单元12的第一端与第二端之间的电压差很大,会使得NPN型双极性电晶体Q3导通,进而使得PNP型双极性电晶体Q2及N型金属氧化物半导体场效电晶体Q1n连带导通。当第一电容C1的电压上升后,开关单元12的第一端与第二端之间的电压差减小,而使得NPN型双极性电晶体Q3及PNP型双极性电晶体Q2接连关闭,进而使得N型金属氧化物半导体场效电晶体Q1n的阻抗增加,而抑制第一电容C1的电压上升斜率。In the fifth embodiment, since the voltage difference between the first end and the second end of the
请参照图6,图6绘示依据本发明第六实施例的用以抑制浪涌电流的电路的方块图。电路1f相较于上述的各实施例,工作原理类似,但开关单元12是采用P型金属氧化物半导体场效电晶体来实现。因此,电路1f其余的单元构件会与上述的各实施例有所差异,细节将详述如下。Please refer to FIG. 6 , which is a block diagram of a circuit for suppressing inrush current according to a sixth embodiment of the present invention. Compared with the above-mentioned embodiments, the
开关单元12包括一P型金属氧化物半导体场效电晶体Q1p以及一二极管D1。P型金属氧化物半导体场效电晶体Q1p的一源极做为开关单元12的第一端用以耦接至电压源Vs。P型金属氧化物半导体场效电晶体Q1p的一汲极做为开关单元12的第二端用以耦接至第一电容C1。P型金属氧化物半导体场效电晶体Q1p的一闸极做为开关单元12的第三端耦接至回馈控制单元14。二极管D1耦接于P型金属氧化物半导体场效电晶体Q1p的源极与汲极之间,以防止P型金属氧化物半导体场效电晶体Q1p受损。The
参考信号产生单元18包括一第二电容C2、一第一电阻R1、一第一分压电阻Rs1以及一第二分压电阻Rs2。第二电容C2的一第一端接地,第二电容C2的一第二端耦接至回馈控制单元14的参考信号输入端。第一电阻R1的一第一端耦接至第一分压电阻Rs1的一第一端及第二分压电阻Rs2的一第一端,第一电阻R1的一第二端耦接至第二电容C2的第二端。第一分压电阻Rs1的一第二端耦接至电压源Vs。第二分压电阻Rs2的一第二端接地。在本实施例中,参考信号产生单元18是通过第一分压电阻Rs1及第二分压电阻Rs2对电压源Vs进行分压来对第二电容C2进行充电,并以第二电容C2的电压做为参考信号输出。The reference
回馈控制单元包括一PNP型双极性电晶体Q2、一NPN型双极性电晶体Q3。PNP型双极性电晶体Q2的一射极做为回馈控制单元14的参考信号输入端耦接至参考信号产生单元18。PNP型双极性电晶体Q2的一基极做为回馈控制单元14的回馈信号输入端耦接至电压耦合单元16的输出埠。PNP型双极性电晶体Q2的一集极耦接至一第二电阻R2的一第一端。The feedback control unit includes a PNP type bipolar transistor Q2 and an NPN type bipolar transistor Q3. An emitter of the PNP bipolar transistor Q2 is coupled to the reference
NPN型双极性电晶体Q3的一射极接地。NPN型双极性电晶体Q3的一基极耦接至第二电阻R2的一第二端。NPN型双极性电晶体Q3的一集极做为回馈控制单元14的输出端通过一第一齐纳二极管ZD1耦接至开关单元12的第三端,且NPN型双极性电晶体Q3的集极通过一第三电阻R3耦接至NPN型双极性电晶体Q3的射极并且接地。One emitter of the NPN bipolar transistor Q3 is grounded. A base of the NPN bipolar transistor Q3 is coupled to a second end of the second resistor R2. A collector of the NPN bipolar transistor Q3 is used as the output end of the
电压耦合单元16包括一第三分压电阻Rs3及一第四分压电阻Rs4。第三分压电阻Rs3的一第一端做为电压耦合单元16的输入埠耦接至开关单元12的第二端。第三分压电阻Rs3的一第二端做为电压耦合单元16的输出埠耦接至回馈控制单元14的回馈信号输入端。第四分压电阻Rs4的一第一端耦接至第三分压电阻Rs3的第二端。第四分压电阻Rs4的一第二端接地。换言之,在本实施例中,电压耦合单元16通过将第一电容C1的电压进行分压耦合至回馈控制单元14。The
一般来说,P型金属氧化物半导体场效电晶体的驱动电压相较于N型金属氧化物半导体场效电晶体而言来得低。因此,第六实施例可以在不使用高压驱动电压源(例如驱动电压源VDD)的情况下使电路1f正常运作。换言之,电路1f中,P型金属氧化物半导体场效电晶体Q1p可以在使用较低的驱动电压下被导通。Generally speaking, the driving voltage of the P-type MOS transistor is lower than that of the N-type MOS transistor. Therefore, the sixth embodiment can make the
另外,为了保护开关单元12,电路1f更包括一开关保护单元20。开关保护单元20包括一第二齐纳二极管ZD2及一保护电阻Rp,该第二齐纳二极管ZD2耦接于开关单元12的第一端及第三端之间。保护电阻Rp耦接于开关单元12的第一端及第三端之间。In addition, in order to protect the
请参考图7,图7绘示依据本发明第三实施例的用以抑制浪涌电流的电路的量测波形图。左侧纵轴处箭头1标示的是开关单元12的N型金属氧化物半导体场效电晶体Q1n的闸-源极电压波形,箭头2标示的是第一电容C1的电压波形,箭头4标示的是第一电容C1的电流波形。横轴座标为时间,一大格刻度为10ms。对于开关单元12的N型金属氧化物半导体场效电晶体Q1n的闸-源极电压波形而言,纵轴座标为电压,一大格刻度为2.5V。对于第一电容C1的电压波形而言,纵轴座标为电压,一大格刻度为2V。对于第一电容C1的电流波形而言,纵轴座标为电流,一大格刻度为5A。Please refer to FIG. 7 . FIG. 7 is a measurement waveform diagram of a circuit for suppressing inrush current according to a third embodiment of the present invention. The
由图7中可看出,藉由本发明的实施例,开关单元12的N型金属氧化物半导体场效电晶体Q1n的闸-源极电压到达完全导通为40ms(中间平台占超过95%以上的整体开关导通时间)。有效延长了第一电容C1的充电时间(即控制第一电容C1的电压上升斜率),进而将浪涌电流的峰值抑制在最高13.3A。It can be seen from FIG. 7 that with the embodiment of the present invention, the gate-source voltage of the N-type metal oxide semiconductor field effect transistor Q1n of the switching
依据本发明实施例,用以抑制浪涌电流的电路可通过将第一电容的电压或开关单元的第一端与第二端的电压差做为回馈信号回馈至回馈控制单元。回馈控制单元再依据回馈信号与参考信号产生单元产生的参考信号控制开关单元的开启与关闭,调整第一电容的充电时间,进而达到抑制浪涌电流的功效。According to an embodiment of the present invention, the circuit for suppressing inrush current can feed back the voltage of the first capacitor or the voltage difference between the first terminal and the second terminal of the switch unit as a feedback signal to the feedback control unit. The feedback control unit controls the switching unit on and off according to the feedback signal and the reference signal generated by the reference signal generating unit, and adjusts the charging time of the first capacitor, thereby achieving the effect of suppressing the surge current.
当然,本发明还可有其它多种实施例,在不背离本发明精神及其实质的情况下,熟悉本领域的技术人员当可根据本发明作出各种相应的改变和变形,但这些相应的改变和变形都应属于本发明所附的权利要求的保护范围。Of course, the present invention can also have other various embodiments, without departing from the spirit and essence of the present invention, those skilled in the art can make various corresponding changes and modifications according to the present invention, but these corresponding Changes and deformations should belong to the protection scope of the appended claims of the present invention.
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CN104767378A (en) * | 2014-01-07 | 2015-07-08 | 株式会社东芝 | Power source circuit |
CN107027334A (en) * | 2015-12-01 | 2017-08-08 | 富士电机株式会社 | Surge current prevents circuit |
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CN104767378A (en) * | 2014-01-07 | 2015-07-08 | 株式会社东芝 | Power source circuit |
CN107027334A (en) * | 2015-12-01 | 2017-08-08 | 富士电机株式会社 | Surge current prevents circuit |
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