CN109727837B

CN109727837B - Plasma equipment and plasma equipment monitoring method

Info

Publication number: CN109727837B
Application number: CN201711033218.7A
Authority: CN
Inventors: 陈怡杰; 廖耕颍; 宋至伟; 陈明凯; 邱瀚仁; 陈益弘
Original assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
Current assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
Priority date: 2017-10-30
Filing date: 2017-10-30
Publication date: 2021-11-23
Anticipated expiration: 2037-10-30
Also published as: CN109727837A

Abstract

The present disclosure provides a plasma equipment and a plasma equipment monitoring method, wherein the plasma equipment comprises: a process chamber having a through hole; a wafer holder disposed in the process chamber; and a light-transmitting element disposed in the through hole ; And a shading device, arranged on the light-transmitting element. The plasma equipment further includes an optical detector disposed on the shading device; and a spectrum analysis device coupled to the optical detector.

Description

Plasma equipment and plasma equipment monitoring method

Technical Field

The present disclosure relates generally to semiconductor devices and monitoring methods, and more particularly to a plasma device and a monitoring method thereof.

Background

Semiconductor devices have been used in a variety of electronic applications, such as personal computers, cell phones, digital cameras, and other electronic devices. Semiconductor devices are generally manufactured by sequentially depositing materials for insulating or dielectric layers, conductive layers, and semiconductor layers onto a wafer, and patterning the various material layers using photolithographic techniques to form circuit elements and devices thereon. Many integrated circuits are typically fabricated on a single wafer, and individual dies on the wafer are singulated between the integrated circuits along a dicing line. For example, the individual dies are typically packaged separately in a multi-chip module or other type of package.

The semiconductor industry today increases the size of wafers to increase throughput and reduce the price per chip. However, as the size of the wafer increases, the size of the process chamber of the plasma apparatus for processing the wafer also increases. Thus, the distribution of plasma within the process chamber requires more precise control when etching processes and the like are performed while the wafer is in the process chamber.

Accordingly, while current plasma equipment meets the objectives of its use, many other requirements have not been met. Accordingly, there is a need to provide improved solutions for plasma equipment.

Disclosure of Invention

The present disclosure provides a plasma apparatus, comprising: a process chamber having a through hole; a wafer seat arranged in the process chamber; the light-transmitting element is arranged in the through hole; and a shading device arranged on the light-transmitting element. The plasma equipment also comprises an optical detector which is arranged on the shading device; and a spectrum analysis device coupled to the optical detector.

The present disclosure provides a plasma device monitoring method, comprising: exciting working gas in a process chamber to form plasma, wherein light generated by the plasma passes through a light-transmitting element of the process chamber and a shading device arranged on the light-transmitting element; and detecting the light and generating a detection signal. The plasma equipment monitoring method also comprises the steps of generating a spectrum signal according to the detection signal; and adjusting the shading device according to the spectrum signal.

Drawings

Fig. 1 is a schematic diagram of a plasma apparatus according to some embodiments of the present disclosure.

Fig. 2 is a system diagram of an optical monitoring system according to some embodiments of the present disclosure.

Fig. 3A and 3B are schematic views of a shading device according to some embodiments of the present disclosure.

Fig. 4 is a flow chart of a plasma equipment monitoring method according to some embodiments of the present disclosure.

Fig. 5 is a schematic view of a shade device according to some embodiments of the present disclosure.

Fig. 6 is a schematic view of a shade device according to some embodiments of the present disclosure.

Description of reference numerals:

plasma equipment 1

Process chamber 10

Side wall 11

Through-hole 12

Light-transmitting element 13

Wafer seat 20

Gas supply device 30

Gas distribution plate 31

Channel 311

Discharge hole 312

Upper surface 313

Gas storage tank 32

Airflow controller 33

First radio frequency device 40

First electrode plate 41

First RF power supply 42

Second radio frequency device 50

Second electrode plate 51

A second RF power supply 52

Optical monitoring system 60

Optical detectors

61, 62

Spectrum analyzing apparatus 63

Optical sensor 631

Processing device 64

Shading device

70, 70a, 70b

Base 71

Adjusting mechanism 72

Light shielding sheet 73

Light hole 74

Network structure 75

Plasma E1

Wafer W1

Base material W11

Etch stop layer W12

Working layer W13

Unexposed area W131

Exposed area W132

Optical fiber F1

Detailed Description

The following description provides many different embodiments, or examples, for implementing different features of the disclosure. The particular examples set forth below are intended merely to illustrate embodiments of the disclosure and are not intended to limit the embodiments of the disclosure. For example, the description of a structure having a first feature over or on a second feature may include direct contact between the first and second features, or another feature disposed between the first and second features, such that the first and second features are not in direct contact.

Moreover, the present description may use the same reference numbers and/or letters in the various examples. The foregoing is used for simplicity and clarity and does not necessarily indicate a relationship between the various embodiments and configurations.

The terms first and second, etc. in this specification are used for clarity of explanation only and do not correspond to and limit the scope of the claims. The terms first feature, second feature, and the like are not intended to be limited to the same or different features.

Spatially relative terms, such as above or below, are used herein for ease of description of one element or feature relative to another element or feature in the figures. Devices that are used or operated in different orientations than those depicted in the figures are included. The shapes, dimensions, and thicknesses of the figures may not be drawn to scale or simplified for clarity of illustration, but are provided for illustration.

The present disclosure provides a light shielding device for a plasma apparatus, which can maintain the intensity of a plasma spectrum detected by an optical monitoring system within a range, thereby reducing the probability of misjudging the plasma process or the abnormality of the plasma apparatus.

Fig. 1 is a schematic view of a plasma apparatus 1 according to some embodiments of the present disclosure. The plasma apparatus 1 may be used to perform a plasma process to the wafer W1. In some embodiments, the plasma apparatus 1 may be an etching apparatus, a Physical Vapor Deposition (PVD) apparatus, a Chemical Vapor Deposition (CVD) apparatus, or an Ion Implantation (Ion Implantation) apparatus. The plasma process may be an etching process, a physical vapor deposition process, a chemical vapor deposition process, or an ion implantation process.

In the present embodiment, the plasma apparatus 1 may be an etching apparatus for performing an etching process on the wafer W1. The plasma apparatus 1 may include a process chamber 10, a wafer pedestal 20, a gas supply 30, a first RF device 40, a second RF device 50, an optical monitoring system 60, and a shutter 70.

In some embodiments, the pressure in the process chamber 10 is in a range of about 10mTorr to 100 mTorr. The wafer boat 20 is disposed in the process chamber 10 for carrying a wafer W1. In some embodiments, the die pad 20 may be an electrostatic die pad. In some embodiments, the wafer W1 is placed on a carrying surface of the wafer pedestal 20 facing the gas supply apparatus 30. The wafer W1 may have a diameter in the range of approximately 200mm to 450 mm.

The gas supply 30 is used to supply a working gas into the process chamber 10 during a plasma process. The gas supply device 30 may include a gas distribution plate 31, a gas storage tank 32, and a gas flow controller 33. The gas distribution plate 31 is located above the wafer pedestal 20 and may be a disk-shaped structure.

The gas distribution plate 31 has a channel 311 and a plurality of exhaust holes 312. The channel 311 is coupled to the airflow controller 33. The drain holes 312 communicate with the channels 311 and face the wafer seat 20. The gas distribution plate 31 is used to eject the working gas toward the wafer seat 20. In some embodiments, the size of the gas distribution plate 31 corresponds to the size of the wafer W1. The gas distribution plate 31 may be made of quartz. In some embodiments, the carrying surface of the wafer pedestal 20, the gas distribution plate 31, and the wafer W1 are parallel to each other.

The gas storage tank 32 may be disposed outside the process chamber 10 for storing the working gas. Gas reservoir 32 is coupled to gas distribution plate 31. Gas flow controller 33 is coupled to gas storage tank 32 and gas distribution plate 31. The gas flow controller 33 may be disposed outside the process chamber 10 to deliver the working gas in the gas storage tank 32 to the gas distribution plate 31. The working gas delivered to the gas distribution plate 31 enters the channel 311 and enters the process chamber 10 through the exhaust holes 312. In some embodiments, the flow controller 33 may be a pump or a valve.

In some embodiments, the working gas comprises CF₄、CHF₃、C₂F₆、SF₆、O₂、N₂And/or Ar. In the present embodiment, the number of the gas storage tanks 32 and the gas flow controllers 33 is one,but are not intended to be limiting. The number of gas reservoirs 32 and gas flow controllers 33 may be two or more, so as to deliver different working gases into the chamber 10 according to the requirements of different plasma processes.

A first rf device 40 is located above the gas distribution plate 31. The first RF device 40 is used to generate an electric field in the process chamber 10. The first rf device 40 includes a first electrode plate 41 and a first rf power source 42. The first electrode plate 41 is positioned above the gas distribution plate 31. In some embodiments, the size of the first electrode plate 41 corresponds to the area of the gas distribution plate 31 and/or the wafer W1. The first electrode plate 41 may be parallel to the gas distribution plate 31 and/or the wafer W1. The first rf power source 42 is coupled to the first electrode plate 41 and is used for providing rf energy to the first electrode plate 41.

The second RF device 50 may be connected to the die pad 20. The second rf device 50 is used to generate an electric field within the process chamber 10. In other words, an electric field is generated between the first RF device 40 and the second RF device 50 to excite the working gas to form the plasma E1.

The second RF device 50 may include a second electrode plate 51 and a second RF power source 52. The second electrode plate 51 may be located in the die pad 20. In some embodiments, the size of the second electrode plate 51 corresponds to the size of the first electrode plate 41. The second rf power source 52 is coupled to the second electrode plate 51 and is used for providing rf energy to the second electrode plate 51.

In the etching process, the wafer W1 is disposed on the wafer pedestal 20. In some embodiments, the wafer W1 includes a substrate W11, an etch stop layer W12, and a working layer W13. The etching stop layer W12 is disposed on the substrate W11. The working layer W13 is disposed on the etch stop layer W12. In some embodiments, the working layer W13 may be a photoresist layer. The working layer W13 includes a plurality of unexposed areas W131 and exposed areas W132.

Then, the gas flow controller 33 feeds the working gas in the gas storage tank 32 into the gas distribution plate 31. The working gas within the gas distribution plate 31 enters the process chamber 10 through the exhaust holes 312. An electric field is generated between the wafer pedestal 20 and the gas distribution plate 31 by activating the first RF device 40 and the second RF device 50. Since the wafer W1 is positioned between the first and second W131 electrode plates 41 and 51, the wafer W1 is positioned within the electric field.

During the etching process, the working gas is excited by the electric field to form a plasma E1 between the wafer W1 and the gas distribution plate 31. In this embodiment, plasma E1 may be used to etch unexposed areas of wafer W1. In another embodiment, plasma E1 may be used to etch exposed area W132 of wafer W1.

Generally, in an etching process, since different chemical materials are brought into the plasma E1, the plasma E1 generates different spectra according to the etching degree of the working layer W13. For example, when plasma E1 etches a portion of unexposed region W131 of working layer W13, some of the chemical material of working layer W13 drifts into chamber 10 and is carried into plasma E1. Different chemical materials in plasma E1 excite different wavelengths of light, resulting in a spectral change in plasma E1.

As the working layer W13 is further etched, the chemical material introduced into plasma E1 increases, at which point the spectrum of plasma E1 will differ from the spectrum of plasma E1 at the very beginning of the etch process. Therefore, the extent of etching of the working layer W13 determines the spectrum of the plasma E1.

In addition, when the etch stop layer W12 is etched, the chemical material of the etch stop layer W12 is also carried into the plasma E1. The spectrum of plasma E1 is also changed by the chemistry of etch stop layer W12. Generally, the end point of the etching process can be defined as the time when the unexposed area W131 is completely or substantially completely removed or the time when the etch stop layer W12 is etched. Therefore, the endpoint of the etching process can be determined according to the spectrum of the plasma E1.

An optical monitoring system 60 is coupled to the process chamber 10. The optical monitoring system 60 is used to detect the spectrum of the plasma E1, thereby monitoring the etching process and the condition of the plasma apparatus 1.

Fig. 2 is a system diagram of an optical monitoring system 60 according to some embodiments of the present disclosure. As shown in fig. 1 and 2, the optical monitoring system 60 includes a plurality of optical detectors 61, an optical detector 62, a spectrum analyzing device 63, and a processing device 64. As shown in fig. 1, an optical detector 61 may be disposed between the first electrode plate 41 and the gas distribution disk 31. In some embodiments, the optical detector 61 may be disposed on the upper surface 313 of the gas distribution plate 31. In this embodiment, the optical detector 61 may pass through the upper surface 313 of the gas distribution plate 31 and may be embedded in the gas distribution plate 31.

In some embodiments, the gas distribution disk 31 between the optical detector 61 and the exit holes 312 may be transparent. Therefore, the light generated from the plasma E1 in the process chamber 10 can be irradiated to the optical detector 61 through the exhaust holes 312 of the gas distribution plate 31. In some embodiments, the optical detector 61 may be exposed to the channel 311.

The optical detector 61 is used for detecting the spectrum of the plasma E1 and generating a detection signal to the spectrum analyzing device 63. In some embodiments, the optical detector 61 may be an end-point detector (end-point detector) for detecting the etching thickness of the working layer W13 and the end point of the etching process.

In some embodiments, the optical detectors 61 are arranged in an array on the gas distribution plate 31. Each optical detector 61 may correspond to a different area of the wafer W1. Therefore, the optical detector 61 can be used to detect the etching degree of the non-region of the wafer W1.

The optical detector 62 is disposed on a sidewall 11 of the process chamber 10 and is located outside the process chamber 10. The sidewall 11 may be a substantially vertical sidewall and may be substantially perpendicular to the gas distribution plate 31 or the wafer W1. In the present embodiment, the sidewall 11 has a through hole 12, and the process chamber 10 has a light-transmitting element 13 disposed in the through hole 12.

In some embodiments, the light-transmitting element 13 may be a sheet-like structure. The light transmissive member 13 is adjacent to the region between the gas distribution plate 31 and the wafer holder 20. The optical detector 62 may be disposed on the light transmissive member 13. Therefore, the light generated by the plasma E1 in the process chamber 10 can be irradiated to the optical detector 62 through the light-transmitting member 13.

The optical detector 62 is used for detecting the spectrum of the plasma E1 and generating a detection signal to the spectrum analyzing device 63. In some embodiments, the optical detector 62 may be an Optical Emission Spectroscopy (OES) detector for detecting the state and quality of the plasma E1 in the etching process.

The spectrum analyzing device 63 is coupled to the optical detector 61 and the optical detector 62. The spectrum analyzer 63 is configured to receive the detection signals generated by the

optical detectors

61 and 62, and generate a spectrum signal to the processing device 64 according to the detection signals.

In some embodiments, the optical detector 61 and the optical detector 62 are connected to the spectrum analyzing device 63 through the optical fiber F1. The spectral analysis Device 63 may include an optical sensor 631, such as a Complementary Metal-Oxide-Semiconductor (CMOS) sensor or a Charge-coupled Device (CCD) sensor. In some embodiments, the

optical detectors

61 and 62 transmit the detection signals to the spectrum analyzing apparatus by wireless transmission.

In some embodiments, light generated by plasma E1 enters optical detector 61 and optical detector 62 and is transmitted to optical sensor 631 via optical fiber F1. The spectrum analyzer 63 generates a spectrum signal according to the light irradiated to the optical sensor 631. In other words, the spectral signal corresponds to the spectrum of plasma E1.

The processing device 64 is coupled to the spectrum analyzer 63, the gas flow controller 33, the first RF power source 42, and the second RF power source 52. The processing device 64 is used for receiving the spectrum signal, and determining whether the semiconductor device 1 has a fault condition and generating a warning signal according to the spectrum signal. For example, if no abnormality occurs in the plasma process or the plasma apparatus 1, the spectral signal is similar to a reference spectral signal. When the spectral signal is excessively different from a reference spectral signal, the processing means 64 can determine that the semiconductor device 1 is malfunctioning and issue an alarm signal. In addition, the processing device 64 can generate a control signal according to the spectrum signal to control the etching degree and the etching end point. In some embodiments, the processing device 64 may be a computer.

In some embodiments, if the processing device 64 analyzes the spectrum signal and determines that the semiconductor device is faulty or abnormal, a warning signal may be sent and the semiconductor device may be disabled.

In some embodiments, the gas flow controller 33 adjusts the flow rate of the working gas outputted from the gas distribution plate 31 according to the control signal. For example, when the amount of plasma E1 is insufficient, gas flow controller 33 may increase the flow rate of the working gas output from gas distribution plate 31 according to the control signal.

In some embodiments, the first rf power source 42 and the second rf power source 52 adjust the rf energy output from the first electrode plate 41 and the second electrode plate 51 according to the control signal, so as to change the intensity of the electric field. When the etching degree of the working layer W13 is insufficient, the first rf power source 42 and the second rf power source 52 increase the rf energy output from the first electrode plate 41 and the second electrode plate 51 according to the control signal.

The light shielding device 70 is disposed on the light transmissive element 13. The shutter 70 may be located outside the process chamber 10 to avoid damage by the plasma E1. In some embodiments, the light shielding device 70 is located between the light transmissive element 13 and the optical detector 62. One side of the light shielding device 70 is connected to the sidewall 11 of the process chamber 10 and faces the light transmissive member 13. The other opposite side of the light blocking element is connected to an optical detector 62. The light blocking device 70 can physically block the amount of light entering the optical detector 62 from the light transmissive element 13.

Fig. 3A and 3B are schematic views of a shading device 70 according to some embodiments of the present disclosure. In this embodiment, the light shielding device 70 may include a base 71 and an adjusting mechanism 72. The base 71 is disposed on the sidewall 11 of the process chamber 10 and corresponds to the light-transmitting element 13. The base 71 may be a ring structure. In some embodiments, the base 71 may be removably disposed on the sidewall 11 of the process chamber 10 to facilitate replacement of the shutter 70.

The adjusting mechanism 72 is disposed on the base 71 and forms a light-transmitting hole 74 corresponding to the light-transmitting element 13. The adjusting mechanism 72 is used to physically block the light passing through the light-transmitting element 13. In the present embodiment, the size of the light hole 74 is variable. The processing device 64 is electrically connected to the adjusting mechanism 72 and is used for controlling the adjusting mechanism 72 to adjust the size of the light hole 74. In other words, the adjusting mechanism 72 can adjust the shielding rate of the light passing through the light transmitting element 13. In some embodiments, the shielding rate may be in a range of 0% to 80%.

In some embodiments, the minimum area of the light-transmitting hole 74 is smaller than the area of the light-transmitting element 13. In some embodiments, the minimum area of the light-transmitting hole 74 is 50% to 80% of the area of the light-transmitting element 13. In some embodiments, the maximum area of the light-transmitting hole 74 is greater than or equal to the area of the light-transmitting element 13. The area of the light transmitting member 13 is measured in a section of the light transmitting member 13 parallel to the light transmitting hole 74.

In some embodiments, the adjusting mechanism 72 includes a plurality of light-shielding sheets 73 annularly arranged on the inner sidewall 11 of the base 71 and forming a light-transmitting hole 74. The light shielding sheet 73 is used to physically shield the light passing through the light transmitting element 13. The processing device 64 generates a control signal according to the spectrum signal and transmits the control signal to the adjusting mechanism 72. In some embodiments, the adjustment mechanism 72 includes a driver. The driver of the adjusting mechanism 72 controls the movement of the light shielding plate 73 according to the control signal, thereby adjusting the size of the light hole 74. As shown in fig. 3A, the size of the light-transmitting hole 74 is small. As shown in fig. 3B, the size of the light-transmitting hole 74 is large.

When the plasma process is performed, the plasma E1 gradually causes the light-transmitting element 13 to be worn away, thereby reducing the light transmittance of the light-transmitting element 13. When the light transmittance of the light-transmitting element 13 is excessively reduced, the difference between the spectral signal generated by the spectral analysis device 63 and the reference spectral signal is excessively large, which may cause the processing device 64 to misjudge the plasma process or cause an abnormality in the plasma apparatus 1, thereby affecting the production efficiency of the wafer W1.

Therefore, in the present embodiment, the light transmittance of the light generated by the plasma E1 through the light-transmitting element 13 and the light-shielding device 70 can be reduced by the light-shielding device 70, and when the light transmittance of the light-transmitting element 13 is reduced due to the abrasion of the plasma process, the processing device 64 can control the light-shielding device 70 to increase the size of the light-transmitting hole 74 according to the difference between the spectral signal and the reference spectral signal, thereby increasing the light transmittance of the light through the light-transmitting element 13 and the light-shielding device 70.

In other words, the light transmittance of the light through the light transmissive member 13 and the light blocking device 70 can be stabilized by the light blocking device 70. The spectral analysis device 63 can generate a spectral signal of stable intensity when no abnormality occurs in the plasma process or the plasma apparatus 1. In addition, since the spectrum signal is similar to the reference spectrum signal when the plasma process or the plasma apparatus 1 is not abnormal, the processing device 64 analyzes the spectrum signal with stable intensity, and the probability of misjudging the abnormality of the plasma process or the plasma apparatus 1 can be reduced.

For example, when a new transparent device 13 is installed in the process chamber 10, the transmittance of the transparent device 13 may be about 100%. The light transmittance of the light through the light-transmitting member 13 and the light-shielding device 70 can be reduced to a predetermined value, for example, 70% by the light-shielding device 70 having the smaller light-transmitting hole 74 as shown in fig. 3A.

After the plasma process is performed several times (for example, 100 times, but not limited thereto), the transmittance of the light-transmitting element 13 is reduced to 99% due to the abrasion of the plasma process. At this time, the processing device 64 increases the size of the light transmission hole 74 according to the intensity of the spectrum signal. The light transmittance of the light through the light-transmitting member 13 and the light-shielding device 70 is maintained to the aforementioned predetermined value by the light-shielding device 70 having the larger light-transmitting hole 74 as shown in fig. 3B. Therefore, the light shielding device 70 in the present disclosure can maintain the intensity of the spectrum signal generated by the spectrum analyzing device 63, so that the processing device 64 can more accurately analyze whether the plasma process or the plasma apparatus 1 is abnormal.

In some embodiments, the size of the light-transmissive holes 74 is adjusted after each plasma process performed by the processing device 64. In some embodiments, the processing device 64 performs one or more actions to adjust the size of the light-transmissive holes 74 in a single plasma process. In some embodiments, the processing device 64 adjusts the size of the light hole 74 according to the predetermined number of spectral signals after performing the plasma process for the predetermined number of times. The predetermined number of times may be two, three, or more than four times.

In the above example, when the processing device 64 analyzes the spectrum signal to determine that the transmittance of the light passing through the light-transmitting element 13 and the light-shielding device 70 is reduced to a predetermined value (e.g., 70%), and the transmittance of the light passing through the light-transmitting element 13 and the light-shielding device 70 cannot be increased by increasing the light-transmitting holes 74, the processing device 64 can notify the maintenance personnel to replace the light-transmitting element 13. In some embodiments, the transmittance of the light passing through the transparent element 13 and the light shielding device 70 is maintained to be N% by the light shielding device 70. When the processing device 64 analyzes the spectrum signal and determines that the transmittance of the light through the light-transmitting element 13 and the light-shielding device 70 is reduced to N% and the size of the light-transmitting hole 74 is the maximum, the processing device 64 can notify the maintenance personnel to replace the light-transmitting element 13. The above N% may range from 50% to 80%.

Fig. 4 is a flow chart of a plasma equipment monitoring method according to some embodiments of the present disclosure. In step 101, the working gas in the process chamber 10 is excited to form a plasma E1. The light generated by the plasma E1 passes through the light-transmitting member 13 and the light-shielding device 70. In step 103, the optical detector 62 detects the light and generates a detection signal.

In step S105, the spectrum analyzing device 63 generates a spectrum signal according to the detection signal. In step S107, the processing device 64 adjusts the light shielding device 70 according to the spectrum signal. In some embodiments, the processing device 64 adjusts the adjusting mechanism 70 according to the spectrum signal, thereby increasing the size of the light-transmitting hole 74 formed by the adjusting mechanism 70.

Fig. 5 is a schematic view of a shade device 70 according to some embodiments of the present disclosure. In the present embodiment, the light shielding device 70 may include a base 71 and a mesh structure 75. The base 71 is disposed on the sidewall 11 of the process chamber 10 and corresponds to the light-transmitting element 13. The base 71 may be a ring structure.

The mesh structure 75 is connected to the inner sidewall of the base 71 and corresponds to the light-transmitting element 13. The mesh structure 75 may be made of opaque material. In some embodiments, the mesh structure 75 may be made of a metal material, such as iron. The mesh structure 75 is used to physically block the light passing through the light-transmitting element 13. The shielding rate of the mesh-like structure 75 for shielding the light passing through the light-transmitting element 13 may be in a range of 10% to 80%. In this example, the shielding rate of the mesh-like structure 75 may be 30%.

For example, when a new transparent device 13 is installed in the process chamber 10, the transmittance of the transparent device 13 may be about 100%. The light transmittance of the light passing through the light-transmitting element 13 and the light-shielding device 70 can be reduced to a first predetermined value, for example, 70% by the mesh structure 75 of the light-shielding device 70.

After the plasma process is performed several times (for example, 100 times, but not limited thereto), the light transmittance of the light-transmitting element 13 is worn due to the plasma process. When the processing device 64 analyzes the spectrum signal to determine that the transmittance of the light passing through the transparent component 13 and the shading device 70 is reduced to a second predetermined value (e.g. 50%), the transmittance of the light passing through the transparent component 13 and the shading device 70 can be increased to the first predetermined value by replacing another shading device 70.

For example, the shading rate of the other shading device 70 may be 20%. When the transmittance of the transparent component 13 is reduced to 80%, the light shielding device 70 with a shielding rate of 30% can be replaced by the light shielding device 70 with a shielding rate of 10%, so as to increase the transmittance of the light passing through the transparent component 13 and the light shielding device 70 to a first predetermined value.

When the processing device 64 analyzes the spectrum signal and determines that the transmittance of the light passing through the light-transmitting element 13 and the light-shielding device 70 is reduced to a second predetermined value and the size of the light-transmitting hole 74 is the maximum, the light-transmitting element 13 can be replaced. Therefore, the light shielding device 70 can maintain the intensity of the spectrum signal within a range, so that the processing device 64 can accurately analyze whether the plasma process or the plasma apparatus 1 is abnormal.

Fig. 6 is a schematic view of a shade device 70 according to some embodiments of the present disclosure. In this embodiment, the plasma apparatus 1 may have a plurality of light shielding devices 70. In some embodiments, the number of the light shielding devices 70 may be two or more.

The shielding rate of the mesh structure 75 of each light shielding device 70 for shielding the light passing through the light transmissive element 13 may be in a range from 10% to 70%. In some embodiments, the mesh structures 75 of each light shielding device 70 are the same and have the same shielding rate, thereby reducing the manufacturing cost of the light shielding device 70.

In the present embodiment, two

light shielding devices

70a and 70b are taken as an example. The shielding rate of the mesh structure 75 of each light shielding device 70 may be 20%. The web 75 of shade 70a is oriented differently than the web 75 of shade 70 b. The orientation of the mesh-like structure 75 of the light shielding device 70a or the mesh-like structure 75 of the light shielding device 70b can be adjusted to make the light transmittance of the light passing through the light-transmitting element 13 and the light shielding device 70 reach a first predetermined value, for example, 70%.

After the plasma process is performed several times (for example, 100 times, but not limited thereto), the light transmittance of the light-transmitting element 13 is worn due to the plasma process. When the transmittance of the light passing through the light-transmitting element 13 and the light-shielding device 70 is reduced to a second predetermined value (e.g., 50%), the first light-shielding device 70a or the second light-shielding device 70b can be removed to increase the transmittance of the light passing through the light-transmitting element 13 and the light-shielding device 70 to the first predetermined value.

In some embodiments, when the transmittance of the light passing through the transparent component 13 and the light shielding device 70 is reduced to a second predetermined value (e.g., 50%), the transmittance of the light passing through the transparent component 13 and the light shielding device 70 can be increased to the first predetermined value by rotating the first light shielding device 70a relative to the second light shielding device 70 b.

When the processing device 64 analyzes the spectrum signal to determine that the transmittance of the light passing through the transparent component 13 and the light shielding device 70 is reduced to a second predetermined value and the transmittance of the light passing through the transparent component 13 and the light shielding device 70 cannot be increased by increasing the light holes 74, the transparent component 13 can be replaced.

In summary, the light shielding device of the embodiment of the disclosure can maintain the intensity of the spectrum signal detected by the optical detector within a range, and further can accurately analyze whether the plasma process or the plasma equipment is abnormal.

The present disclosure provides a plasma apparatus, comprising: a process chamber having a through hole; a wafer seat arranged in the process chamber; the light-transmitting element is arranged in the through hole; the shading device is arranged on the light-transmitting element; the first optical detector is arranged on the shading device; and a spectrum analysis device coupled to the optical detector.

In some embodiments, the light shielding apparatus includes: the base is arranged in the process chamber; and an adjusting mechanism arranged on the base and forming a light hole corresponding to the light-transmitting element.

In some embodiments, the adjusting mechanism includes a plurality of light-shielding sheets annularly arranged on the base and forming the light-transmitting hole.

In some embodiments, the plasma apparatus further comprises a processing device electrically connected to the spectral analysis device and the adjustment mechanism, and configured to control the adjustment mechanism, thereby adjusting the size of the light hole.

In some embodiments, the optical detector is configured to detect light passing through the light hole and generate a detection signal to be transmitted to the spectral analysis device, the spectral analysis device generates a spectral signal according to the detection signal to be transmitted to the processing device, and the processing device controls the adjusting mechanism according to the spectral signal.

In some embodiments, the adjustment mechanism comprises: the base is arranged in the process chamber; and a mesh structure disposed on the base and corresponding to the light-transmitting element, wherein the mesh structure is made of opaque material.

In some embodiments, the plasma apparatus further comprises: a gas distribution plate arranged in the process chamber and above the wafer seat; a gas storage tank coupled to the gas distribution plate; and a second optical detector disposed on the gas distribution plate. The gas distribution plate is used for supplying a working gas to the wafer seat.

In some embodiments, the plasma apparatus further comprises: the first radio frequency device is positioned on the gas distribution plate; and a second RF device coupled to the wafer seat, wherein the first and second RF devices are used for generating an electric field between the wafer seat and the gas distribution plate, and the electric field is used for exciting the working gas to form plasma.

In some embodiments, a size of a light hole of the light shielding device is adjusted according to the spectrum signal.

The above-disclosed features may be combined, modified, replaced, or transposed with respect to one or more disclosed embodiments in any suitable manner, and are not limited to a particular embodiment.

While the present disclosure has been described with reference to various embodiments, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the disclosure. Therefore, the above embodiments are not intended to limit the scope of the present disclosure, which is defined by the appended claims.

Claims

1. A plasma device comprising:

a process chamber with a through hole;

a wafer holder, disposed in the process chamber;

a light-transmitting element disposed in the through hole;

a shading device, arranged on the light-transmitting element;

a first optical detector disposed on the shading device;

a gas distribution plate, which is transparent and arranged above the wafer holder;

a first radio frequency device, separately arranged on the gas distribution plate;

a plurality of second optical detectors arranged in an array between the gas distribution plate and the first radio frequency device; and

a spectral analysis device, coupled to the first optical detector and the plurality of second optical detectors;

The first optical detector is used to detect the light passing through a light-transmitting hole of the light shielding device and generate a first detection signal, and the plurality of second optical detectors are used to detect the light passing through the gas distribution plate and generate a The second detection signal, the first detection signal and the second detection signal are sent to the spectral analysis device, the spectral analysis device generates a spectral signal according to the first and second detection signals and sends it to a processing device, and the processing device The size of the light-transmitting hole is controlled according to the spectral signal.

2. The plasma apparatus of claim 1, wherein the shading device comprises:

a base, disposed on the process chamber; and

An adjusting mechanism is arranged on the base and forms the light-transmitting hole corresponding to the light-transmitting element.

3 . The plasma apparatus of claim 2 , wherein the adjusting mechanism comprises a plurality of light shielding sheets, which are annularly arranged on the base and form the light-transmitting hole. 4 .

4 . The plasma apparatus of claim 2 , wherein the processing device is electrically connected to the spectral analysis device and the adjustment mechanism, and is used for controlling the adjustment mechanism to adjust the size of the light-transmitting hole. 5 .

5. The plasma apparatus of claim 4, wherein the shading device comprises:

a base, disposed on the process chamber; and

A net-like structure is arranged on the base and corresponds to the light-transmitting element, wherein the net-like structure is made of an opaque material.

6. The plasma apparatus of any one of claims 1 to 5, further comprising:

A gas storage tank is coupled to the gas distribution plate; wherein the gas distribution plate is used for supplying a working gas toward the wafer holder.

7. The plasma apparatus of claim 6, further comprising:

a second radio frequency device coupled to the chip holder,

The first radio frequency device and the second radio frequency device are used to generate an electric field between the wafer holder and the gas distribution plate, and the electric field is used to excite the working gas to form plasma.

8. A plasma equipment monitoring method, comprising:

Exciting a working gas in a process chamber to form a plasma, wherein a part of the light generated by the plasma is transmitted to a first optical detection through a light-transmitting element of the process chamber and a light-shielding device disposed on the light-transmitting element and another part of the light passes through a gas distribution plate of the process chamber to a plurality of second optical detectors arranged in an array on the gas distribution plate;

The first optical detector detects the part of the light and generates a first detection signal;

The plurality of second optical detectors detect the other part of the light and generate a second detection signal;

generating a spectral signal according to the first and second detection signals; and

The size of a light-transmitting hole of the light-shielding device is adjusted according to the spectral signal.