CN109727706A - Flexible transparent conductive film and preparation method thereof - Google Patents
Flexible transparent conductive film and preparation method thereof Download PDFInfo
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- CN109727706A CN109727706A CN201910174410.0A CN201910174410A CN109727706A CN 109727706 A CN109727706 A CN 109727706A CN 201910174410 A CN201910174410 A CN 201910174410A CN 109727706 A CN109727706 A CN 109727706A
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- 230000009975 flexible effect Effects 0.000 title claims abstract description 50
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 57
- 239000002042 Silver nanowire Substances 0.000 claims abstract description 56
- 239000012528 membrane Substances 0.000 claims abstract description 34
- 239000007788 liquid Substances 0.000 claims abstract description 23
- 229920002379 silicone rubber Polymers 0.000 claims abstract description 22
- 239000003431 cross linking reagent Substances 0.000 claims abstract description 10
- 238000004528 spin coating Methods 0.000 claims abstract description 10
- 239000002253 acid Substances 0.000 claims abstract description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000006185 dispersion Substances 0.000 claims abstract description 6
- 239000000203 mixture Substances 0.000 claims abstract description 6
- 238000002791 soaking Methods 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 75
- 229920000260 silastic Polymers 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- -1 radical siloxane Chemical class 0.000 claims description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 5
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 5
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 5
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 claims description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- 238000007711 solidification Methods 0.000 claims description 4
- 230000008023 solidification Effects 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- 239000004677 Nylon Substances 0.000 claims description 2
- 239000004743 Polypropylene Substances 0.000 claims description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 239000000428 dust Substances 0.000 claims description 2
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 238000002386 leaching Methods 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims description 2
- 229920001778 nylon Polymers 0.000 claims description 2
- 229920001155 polypropylene Polymers 0.000 claims description 2
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 claims description 2
- 150000004040 pyrrolidinones Chemical class 0.000 claims description 2
- 239000004627 regenerated cellulose Substances 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 125000002252 acyl group Chemical group 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- VWSUVZVPDQDVRT-UHFFFAOYSA-N phenylperoxybenzene Chemical group C=1C=CC=CC=1OOC1=CC=CC=C1 VWSUVZVPDQDVRT-UHFFFAOYSA-N 0.000 claims 1
- 229920002492 poly(sulfone) Polymers 0.000 claims 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims 1
- 229940058401 polytetrafluoroethylene Drugs 0.000 claims 1
- 239000004810 polytetrafluoroethylene Substances 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 238000003828 vacuum filtration Methods 0.000 abstract description 5
- 238000001035 drying Methods 0.000 abstract 1
- 238000002156 mixing Methods 0.000 abstract 1
- 229910021389 graphene Inorganic materials 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000004809 Teflon Substances 0.000 description 4
- 229920006362 Teflon® Polymers 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000000967 suction filtration Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical group C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
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- Non-Insulated Conductors (AREA)
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Abstract
The invention discloses a flexible transparent conductive film and a preparation method thereof, and the flexible transparent conductive film comprises the following steps: (1) adding silver nanowires into absolute ethyl alcohol, ultrasonically dispersing the silver nanowires uniformly, carrying out vacuum filtration on the dispersion liquid to the surface of an organic filter membrane, and drying the filter membrane to obtain a filter membrane A with uniformly dispersed silver nanowires; (2) uniformly mixing liquid silicon rubber and a corresponding cross-linking agent, uniformly dispersing the mixture on the surface of a metal film by spin coating, and curing to obtain a film B; (3) closely attaching one side of the filter membrane A with the silver nanowires and one side of the film B with the cured silicon rubber, and transferring the silver nanowire film on the filter membrane to the surface of the silicon rubber film through pressure treatment; (4) and (4) soaking the sample obtained in the step (3) in a dilute acid solution to completely dissolve the metal film on the surface of the silicon rubber film, so as to obtain the flexible transparent conductive film. The ultrathin flexible transparent conductive film prepared by the invention has uniform conductivity and good flexibility.
Description
Technical field
The invention belongs to flexible conductive film field of material technology, and in particular to a kind of preparation of flexible transparent conductive film
Method.
Background technique
As electronic device and equipment develop towards removable, light, bending deformed direction, novel flexible is transparent to be led
Conductive film material is developed rapidly.For conventional rigid conductive material, novel flexible transparent conductive film material,
Not only there is the excellent optical transparence of traditional material and low sheet resistance, but also can use in the bent state.Each
In kind flexible transparent conductive film material, based on the flexible transparent conductive film of silver nanowires because of its excellent performance and low system
Standby cost becomes the research hotspot of nearest more than ten years.
Due to the development of flexible electronic skin, the uniform flexible transparent conductive film of ultra-thin conduction is paid special attention to.
As a kind of preparation method (CN106158144A) proposition of ultra-thin super Flexible graphene conductive film of patent passes through chemical vapor deposition
Area method deposits one layer of graphene on metal foil surface surface first, transfers graphene to substrate table after then removing metal foil
Face.Although the lower ultra-thin super Flexible graphene conductive film of sheet resistance can be prepared by this method, there is also following problem,
On the one hand by process for preparing graphenes by chemical vapour deposition, high request not only is proposed to equipment, but also preparation efficiency is lower;Separately
On the one hand need to be transferred to substrate surface to the graphene of preparation, not only efficiency is lower, and transfer process be easy to cause graphene
Breakage causes Thin film conductive uneven.
Summary of the invention
The primary purpose of the present invention is that solving the disadvantage that the prior art and shortcoming, a kind of conductive uniform ultra-thin is provided
The preparation method of silver nanowires flexible transparent conductive film.This method process equipment is simple, and prepared ultrathin flexible is transparent to lead
Conductive film conduction is uniform, flexible.
It is a further object of the present invention to provide the conductive uniform ultra-thin silver nanowires flexible and transparent conductives of above method preparation
Film.
The purpose of the present invention is achieved through the following technical solutions:
A kind of preparation method of flexible transparent conductive film, includes the following steps:
(1) silver nanowires is added in dehydrated alcohol, ultrasonic disperse is uniform, and above-mentioned dispersion liquid is arrived by vacuum filtration
Organic system filter membrane surface, it is later that filter membrane is dry, obtain the finely dispersed filter membrane A of silver nanowires;
(2) liquid silastic is uniformly mixed with corresponding crosslinking agent, is later uniformly dispersed mixture by spin coating
To metal film surfaces, then cured processing, film B is obtained;
(3) by filter membrane A have the side of silver nanowires and film B have solidify after the side of silicon rubber fit closely, through pressure
Processing, is transferred to silicon rubber thin film surface for the silver nanowire film on filter membrane;
(4) sample of step (3) is immersed in dilute acid soln, so that the metallic film of silicon rubber thin film surface is completely molten
Solution to get arrive flexible transparent conductive film.
Preferably, the deposition of step (1) surface filter membrane A silver nanowires is 100~500mg/m2。
Preferably, the ratio of step (2) crosslinking agent and liquid silastic is 2~10wt%.
Preferably, liquid silastic described in step (2) be dimethyl silicone polymer, dialkyl polydimethylsiloxane,
One of polymethyl hydrogen siloxane;The crosslinking agent is dibenzoyl peroxide, 2,5- diformazan base -5- di-t-butyl peroxide
The double pyrrolidones silane of hexane, methyl ethylene, methyltriethoxysilane, vinyltriethoxysilane, tetramethoxy-silicane
One of alkane.
Preferably, organic system filter membrane described in step (1) is teflon membrane filter, polypropylene filter, nylon leaching film, gathers
Any one in sulfone filter membrane, regenerated cellulose filter membrane.
Preferably, step (2) solidification temperature be 40~80 DEG C, curing time be 12~for 24 hours.
Preferably, pressure described in step (3) be 1~5MPa, the pressure treatment time be 12~for 24 hours.
Preferably, metallic film described in step (2) is magnesium, aluminium, iron, copper, zinc, any one in tin;The rotation
Painting speed is 2000~6000rpm.
Preferably, dilute acid soln described in step (4) is dilute hydrochloric acid, dilute sulfuric acid, any one in dust technology, and diluted acid is molten
The concentration of liquid be 1~5mol/L, soaking time be 12~for 24 hours.
Compared with prior art, the present invention has the following advantages and beneficial effects:
Preparation equipment of the present invention and method are simple, by vacuum filtration and spin coating prepare respectively conductive layer silver nanowires and thoroughly
Bright flexible substrates can realize the control to conductive layer and substrate performance respectively, so that prepared flexible and transparent conductive is thin
It is ultra-thin to realize that its thickness not only can be effectively controlled in film, while film has preferable conductivity uniformity.
Conduction uniform ultra-thin silver nanowires flexible transparent conductive film provided by the invention can be applied to flexible electrode, flexibility
The associated flexibles field of electronic materials such as sensor, flexible electronic skin.
Detailed description of the invention
Fig. 1 is that conductive uniform ultra-thin silver nanowires flexible transparent conductive film flexibility prepared by the embodiment of the present invention 1~3 is surveyed
The relational graph of surface resistance of taking temperature and number of bends.
Fig. 2 is that conductive uniform ultra-thin silver nanowires flexible transparent conductive film prepared by the embodiment of the present invention 1 is conductive uniformly
Property test chart.
Fig. 3 is that conductive uniform ultra-thin silver nanowires flexible transparent conductive film prepared by the embodiment of the present invention 2 is conductive uniformly
Property test chart.
Fig. 4 is that conductive uniform ultra-thin silver nanowires flexible transparent conductive film prepared by the embodiment of the present invention 3 is conductive uniformly
Property test chart.
Specific embodiment
Below with reference to embodiment and attached drawing, the present invention is described in further detail, but embodiments of the present invention are unlimited
In this, room temperature of the present invention refers to 25~30 DEG C.
Embodiment 1
(1) 1mg silver nanowires is added in 100ml dehydrated alcohol, ultrasonic disperse is uniform, takes above-mentioned dispersion liquid 20ml logical
It is 5cm teflon membrane filter surface that vacuum filtration, which is crossed, to diameter, and filter membrane is dried at room temperature for 2h later and is uniformly dispersed
Silver nanowire film, film surface silver nanowires deposition be 100mg/m2。
(2) by liquid silastic dialkyl polydimethylsiloxane and corresponding crosslinking agent methyltriethoxysilane according to
The ratio of mass ratio 100:2 is uniformly mixed, and by the revolving speed of 2000rpm, by mixture, equably spin coating is distributed to tinfoil paper table later
Then face solidifies for 24 hours for 40 DEG C of film.
(3) side of silicon rubber after solidifying closely pastes in the side and (2) that the sample prepared in (1) is had to silver nanowires
It closes, the sample of two fittings is handled for 24 hours under 1MPa pressure, the silver nanowire film on filter membrane can be transferred to silicon rubber film
Surface.
(4) that the sample that silver nanowire film is transferred to silicon rubber thin film surface has been immersed in 1mol/L dilute hydrochloric acid by (3) is molten
In liquid for 24 hours, so that the metallic film of silicon rubber thin film surface is completely dissolved, it is flexible that conductive uniform ultra-thin silver nanowires can be obtained
Transparent conductive film.
The transparency of silver nanowires flexible transparent conductive film prepared by the present embodiment is higher as can be seen from Table 1, but
Since the silver nanowires concentration of suction filtration is lower and liquid silastic spin coating revolving speed is lower, thus film resistor and thickness are with respect to it
Its embodiment is higher.
Silver nanowires flexible transparent conductive film prepared by the present embodiment is flexible as seen from Figure 1.
Silver nanowires flexible transparent conductive film conductivity uniformity prepared by the present embodiment is preferable as seen from Figure 2.
Table 1
Sheet resistance (Ω/sq) | Transparency (%) | Thickness (μm) |
44.7 | 93.2 | 48 |
Embodiment 2
(1) 1mg silver nanowires is added in 100ml dehydrated alcohol, ultrasonic disperse is uniform, takes above-mentioned dispersion liquid 60ml logical
It is 5cm teflon membrane filter surface that vacuum filtration, which is crossed, to diameter, and filter membrane is dried at room temperature for 4h later and is uniformly dispersed
Silver nanowire film (film surface silver nanowires deposition be 300mg/m2)。
(2) by liquid silastic dialkyl polydimethylsiloxane and corresponding crosslinking agent methyltriethoxysilane according to
The ratio of mass ratio 100:6 is uniformly mixed, and by the revolving speed of 4000rpm, by mixture, equably spin coating is distributed to tinfoil paper table later
Face, then 60 DEG C of solidification 18h of film.
(3) side of silicon rubber after solidifying closely pastes in the side and (2) that the sample prepared in (1) is had to silver nanowires
It closes, the sample of two fittings handles 18h under 3MPa pressure, the silver nanowire film on filter membrane can be transferred to silicon rubber film
Surface.
(4) that the sample that silver nanowire film is transferred to silicon rubber thin film surface has been immersed in 3mol/L dilute hydrochloric acid by (3) is molten
It is flexible that conductive uniform ultra-thin silver nanowires can be obtained so that the metallic film of silicon rubber thin film surface is completely dissolved in 18h in liquid
Transparent conductive film.
The transparency of silver nanowires flexible transparent conductive film prepared by the present embodiment is higher as can be seen from Table 2, with
Filter silver nanowires concentration and liquid silastic spin coating revolving speed improve, film resistor and thickness all decrease.
Silver nanowires flexible transparent conductive film prepared by the present embodiment is flexible as seen from Figure 1.
Silver nanowires flexible transparent conductive film conductivity uniformity prepared by the present embodiment is preferable as seen from Figure 3.
Table 2
Sheet resistance (Ω/sq) | Transparency (%) | Thickness (μm) |
32.9 | 91.6 | 31 |
Embodiment 3
(1) 1mg silver nanowires is added in 100ml dehydrated alcohol, ultrasonic disperse is uniform, above-mentioned dispersion liquid is passed through true
Empty pump filter is 5cm teflon membrane filter surface to diameter, and filter membrane is dried at room temperature for 6h later and obtains finely dispersed silver
(film surface silver nanowires deposition is 500mg/m to nano wire film2)。
(2) by liquid silastic dialkyl polydimethylsiloxane and corresponding crosslinking agent methyltriethoxysilane according to
The ratio of mass ratio 100:10 is uniformly mixed, and by the revolving speed of 6000rpm, by mixture, equably spin coating is distributed to tinfoil paper later
Surface, then 80 DEG C of solidification 12h of film.
(3) side of silicon rubber after solidifying closely pastes in the side and (2) that the sample prepared in (1) is had to silver nanowires
It closes, the sample of two fittings handles 12h under 5MPa pressure, the silver nanowire film on filter membrane can be transferred to silicon rubber film
Surface.
(4) that the sample that silver nanowire film is transferred to silicon rubber thin film surface has been immersed in 5mol/L dilute hydrochloric acid by (3) is molten
It is flexible that conductive uniform ultra-thin silver nanowires can be obtained so that the metallic film of silicon rubber thin film surface is completely dissolved in 12h in liquid
Transparent conductive film.
Table 3
Sheet resistance (Ω/sq) | Transparency (%) | Thickness (μm) |
19.6 | 90.1 | 19 |
The transparency of silver nanowires flexible transparent conductive film prepared by the present embodiment is higher as can be seen from Table 3, but
Since the silver nanowires concentration and liquid silastic spin coating revolving speed of suction filtration are higher, thus the relatively other realities of film resistor and thickness
It is lower to apply example.
Silver nanowires flexible transparent conductive film prepared by the present embodiment is flexible as seen from Figure 1.
Silver nanowires flexible transparent conductive film conductivity uniformity prepared by the present embodiment is preferable as seen from Figure 4.
Claims (10)
1. a kind of preparation method of flexible transparent conductive film, which comprises the steps of:
(1) silver nanowires is added in dehydrated alcohol, ultrasonic disperse is uniform, by above-mentioned dispersion liquid by being filtered by vacuum to organic
It is filter membrane surface, it is later that filter membrane is dry, obtain the finely dispersed filter membrane A of silver nanowires;
(2) liquid silastic is uniformly mixed with corresponding crosslinking agent, mixture is evenly dispersed by gold by spin coating later
Belong to film surface, then cured processing, obtains film B;
(3) by filter membrane A have the side of silver nanowires and film B have solidify after the side of silicon rubber fit closely, through pressure treatment,
Silver nanowire film on filter membrane is transferred to silicon rubber thin film surface;
(4) sample of step (3) is immersed in dilute acid soln, so that the metallic film of silicon rubber thin film surface is completely dissolved,
Obtain flexible transparent conductive film.
2. preparation method according to claim 1, which is characterized in that step (1) surface filter membrane A silver nanowires is sunk
Accumulated amount is 100~500mg/m2。
3. preparation method according to claim 2, which is characterized in that the ratio of step (2) crosslinking agent and liquid silastic
For 2~10wt%.
4. preparation method according to claim 3, which is characterized in that liquid silastic described in step (2) is poly- diformazan
One of radical siloxane, dialkyl polydimethylsiloxane, polymethyl hydrogen siloxane;The crosslinking agent is diphenyl peroxide first
Acyl, 2,5- diformazan base -5- di-t-butyl peroxyhexane, the double pyrrolidones silane of methyl ethylene, methyltriethoxysilane,
One of vinyltriethoxysilane, tetramethoxy-silicane.
5. the preparation method according to claim 4, which is characterized in that organic system filter membrane described in step (1) is polytetrafluoro
Ethylene filter membrane, polypropylene filter, nylon leaching film, polysulfones filter membrane, any one in regenerated cellulose filter membrane.
6. preparation method described in any one according to claim 1~5, which is characterized in that step (2) solidification temperature be 40~
80 DEG C, curing time be 12~for 24 hours.
7. preparation method according to claim 6, which is characterized in that pressure described in step (3) is 1~5MPa, pressure
Handle the time be 12~for 24 hours.
8. preparation method according to claim 7, which is characterized in that metallic film described in step (2) be magnesium, aluminium, iron,
Copper, zinc, any one in tin;The spin speed is 2000~6000rpm.
9. preparation method according to claim 8, which is characterized in that dilute acid soln described in step (4) is dilute hydrochloric acid, dilute
Any one in sulfuric acid, dust technology, the concentration of dilute acid soln are 1~5mol/L, soaking time is 12~for 24 hours.
10. the flexible transparent conductive film of claim 1~9 any one method preparation.
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CN110257003A (en) * | 2019-06-19 | 2019-09-20 | 复旦大学 | Transferable transparent flexible conductive adhesive film of tack and its preparation method and application |
CN110993147A (en) * | 2019-12-09 | 2020-04-10 | 重庆文理学院 | Preparation method of silver nanowire transparent conductive film |
CN113061285A (en) * | 2021-02-26 | 2021-07-02 | 中国科学院深圳先进技术研究院 | Preparation method of ultrathin porous stretchable film electrode |
CN113953525A (en) * | 2021-10-18 | 2022-01-21 | 中国人民解放军国防科技大学 | Preparation method of nanowire silver film for packaging and interconnecting large-size power semiconductor integrated circuit |
CN115249553A (en) * | 2022-01-21 | 2022-10-28 | 闽南师范大学 | Preparation method of flexible electrode |
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