CN109722638A - A kind of thin film sputtering control device and method - Google Patents
A kind of thin film sputtering control device and method Download PDFInfo
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Abstract
A kind of thin film sputtering control device and method, wherein the device includes: power module (1), and anode is connected to the anode of thin film sputtering cavity (7), and cathode is connected to the cathode of thin film sputtering cavity (7)；Voltage monitor (2) is parallel-connected between the anode and cathode of power module (1), for obtaining the sputtering voltage of thin film sputtering cavity (7)；Electric current monitor (3) is connected in series between the cathode of power module (1) and the cathode of thin film sputtering cavity (7), for obtaining the sputtering current of thin film sputtering cavity (7)；It sputters controller (4), it is electrically connected respectively to power module (1), voltage monitor (2) and electric current monitor (3), for according to sputtering voltage and sputtering current, the sputtering power of compensation film sputter chamber (7), keeps sputter rate constant.So as to be adjusted automatically according to the variation of target diameter to sputter rate, meet the requirement of coating film thickness.
Description
Technical field
The invention belongs to thin film sputtering field more particularly to a kind of thin film sputtering control device and methods.
Background technique
PVD equipment target use process needs open-path measurement target diameter, and as target consumes, sputter rate can be gradually
It reduces, is all to reach initially set splash by manually adjusting sputtering power at present to guarantee the thicknesses of layers of plated film
Firing rate rate, to complete the thicknesses of layers of plated film.
Working time or the service life of target, the variation to target diameter are not supported, do not known about to current sputtering technology
The variation of the sputter rate reflected cannot capture in time, to not be able to satisfy film thickness demand.
Summary of the invention
(1) goal of the invention
The object of the present invention is to provide a kind of diameter changes of Real-time Feedback target by voltage and current, to sputtering speed
A kind of thin film sputtering control device and method that rate is automatically adjusted.
(2) technical solution
To solve the above problems, the first aspect of the present invention provides a kind of thin film sputtering control device, which is characterized in that
It include: power module, anode is connected to the anode of thin film sputtering cavity, and cathode is connected to the cathode of thin film sputtering cavity；Electricity
Monitor is pressed, is parallel-connected between the anode and cathode of the power module, for obtaining splashing for the thin film sputtering cavity
Radio pressure；Electric current monitor is connected in series between the cathode of the power module and the cathode of the thin film sputtering cavity, is used
In the sputtering current for obtaining the thin film sputtering cavity；Controller is sputtered, the power module, voltage monitoring are electrically connected respectively to
Device and electric current monitor compensate the thin film sputtering for the sputtering voltage and sputtering current according to the thin film sputtering cavity
The sputtering power of cavity keeps sputter rate constant.
Further, device further include: resistance adapter；One end of the resistance adapter and the electric current monitor
Connection, the other end of the resistance adapter are connected with the cathode of the power module；The sputtering controller is connected in parallel on described
The both ends of electric current monitor and the resistance adapter.
Further, power module includes: power supply unit, and one end is connected to three-phase alternating current, is used for described three
Phase alternating current carries out rectifying and wave-filtering and obtains unidirectional voltage and unidirectional current；Wave chopping controller, one end and the power supply unit
The other end connection, for the direct current to be changed into the direct current of fixed voltage or adjustable voltage；Arc-detection and switch
Circuit, one end are connect with the other end of the wave chopping controller, and the other end is connect with the thin film sputtering cavity, for controlling
Make the stable discharge of the output voltage of the wave chopping controller.
Further, power supply unit includes: power-supply filter, rectifier, diode D1 and the first filter circuit；It is described
The output end connection corresponding with three-phase alternating current respectively of three ends of power-supply filter, three outputs of the power-supply filter
End is respectively connected to the corresponding input terminal of rectifier；Three output ends of the rectifier are respectively connected to the diode D1
Input terminal；The output end of the diode is connect with first filter circuit.
Further, wave chopping controller includes: field-effect tube F1, transformer, diode D2 and the second filter circuit；It is described
The output end of field-effect tube F1 is connect with the input terminal of the transformer, and the output end of the transformer is with the diode D2's
Input terminal connection, the output end of the diode D2 are connect with second filter circuit.
Further, arc-detection and switching circuit include: field-effect tube F2；The output end of the field-effect tube F2 connects
To the sputter gun and the target.
Further, the power module further include: voltage sampling element, current sample element and power-supply controller of electric；Institute
Voltage sampling element is stated, is connect with the power-supply controller of electric, for acquiring the output voltage of the power module；The electric current is adopted
Sample element is connect with the power-supply controller of electric, for acquiring the output electric current of the power module；The power-supply controller of electric, point
It is not connect with the power supply unit, wave chopping controller and arc-detection and switching circuit, for based on the power module
Input voltage and input current are respectively to the power supply unit, the wave chopping controller and the arc-detection and switching circuit
Output voltage and output electric current controlled so that output voltage and output electric current keep stablize.
According to another aspect of the present invention, a kind of thin film sputtering control method is provided, is controlled using a kind of thin film sputtering
Device controls thin film sputtering process, comprising: acquires the sputtering voltage and sputtering current of target；Based on splashing for the target
Radio pressure and sputtering current, calculate consumption electric energy of the target in sputtering process；Based on the target diameter that pre-establishes with
The data model and the consumption electric energy for consuming electric energy, obtain current target diameter；It is right based on the current target diameter
The sputtering power of the thin film sputtering cavity compensates, and keeps constant sputter rate.
Further, the data model of the target diameter and consumption electric energy are as follows: D-d=α Wt；In formula, D is initial target
Diameter, d are current target diameter, and α is constant, are target diameter and the consumption electric energy factor, and W is consumption electric energy, and t is the time.
Further, described to be based on the current target diameter, the sputtering power of the thin film sputtering cavity is mended
When repaying, compensated sputtering power is calculated according to following equation: V=(D-d) * P/2W；Wherein, V is sputter rate, and D is just
Beginning diameter, d are actual diameters, and P is sputtering power, and W is consumption electric energy.
(3) beneficial effect
Above-mentioned technical proposal of the invention has following beneficial technical effect: passing through acquisition sputtering voltage and sputtering electricity
It flows, and the consumption electric energy of target is calculated based on the two, thus can know that the diameter change of target, and then by sputtering
Power compensates, so that sputter rate is kept constant, to reach the film thickness of requirement.
Detailed description of the invention
Fig. 1 is the electrical block diagram in a kind of thin film sputtering control device of the embodiment of the present invention about power module；
Fig. 2 is a kind of structural schematic diagram of thin film sputtering control device of the embodiment of the present invention；
Fig. 3 is a kind of flow chart of thin film sputtering control method of the embodiment of the present invention；
Fig. 4 is the relation schematic diagram of the consumption electric energy and sputter rate of Cu target in the embodiment of the present invention.
Appended drawing reference:
1: power module；11: power supply unit；110: power-supply filter；111: rectifier；112: diode D1；113:
First filter circuit；12: wave chopping controller；120: field-effect tube F1；121: transformer；122: diode D2；123: the second filters
Wave circuit；13: arc-detection and switching circuit；130: field-effect tube F2；14: voltage sampling element；15: current sample element；
16: power-supply controller of electric；17: synchrotrans；2: voltage monitor；3: electric current monitor；4: sputtering controller；5: resistance adaptation
Device；6: operation control panel；7: thin film sputtering cavity.
Specific embodiment
In order to make the objectives, technical solutions and advantages of the present invention clearer, With reference to embodiment and join
According to attached drawing, the present invention is described in more detail.It should be understood that these descriptions are merely illustrative, and it is not intended to limit this hair
Bright range.In addition, in the following description, descriptions of well-known structures and technologies are omitted, to avoid this is unnecessarily obscured
The concept of invention.
Fig. 1 is a kind of structural schematic diagram of thin film sputtering control device of the embodiment of the present invention.
Fig. 2 is a kind of structural schematic diagram of thin film sputtering control device of the embodiment of the present invention.
L1, L2 and L3 respectively indicate the three-phase electricity of AC power source in Fig. 1, Fig. 2, and OUT+ indicates that the anode of power module 1 is defeated
Outlet, OUT- indicate power module 1 cathode output end, wherein OUT+ is connect with the anode of thin film sputtering cavity, OUT- with it is thin
The cathode of film sputter chamber connects, and target belongs to cathode, therefore it is also assumed that is that OUT- is connect with target.Thin film sputtering cavity
Anode and cathode and cavity are all insulation, in this way, generating electric field after corona discharge between the anode and cathode, excite processing procedure gas
Body generates plasma, and plasma sputtering target, deposition forms film layer on substrate.
As depicted in figs. 1 and 2, a kind of thin film sputtering control device, comprising: power module 1, voltage monitor 2, electric current prison
Control device 3 and sputtering controller 4；The output end of power module 1 is divided into anode and cathode, the anode of power module 1 are connected to film
The anode of sputter chamber, cathode are connected to the cathode (target) of thin film sputtering cavity 7；Voltage monitor 2 is parallel-connected to described
Between the anode and cathode of power module 1, for obtaining the sputtering voltage of thin film sputtering cavity 7；Electric current monitor 3, series connection connect
It is connected between the cathode of the power module 1 and the cathode of thin film sputtering cavity, for obtaining the sputtering electricity of thin film sputtering cavity 7
Stream；Controller 4 is sputtered, the power module 1, voltage monitor 2 and electric current monitor 3 are electrically connected respectively to, for according to thin
The sputtering voltage and sputtering current of film sputter chamber 7, the sputtering power of compensation film sputter chamber 7 make sputter rate (namely target
The deposition rate of material) it is constant.Such as: the electric energy of consumption 100KWH can sputter the target of 1mm thickness when initial, with target
The use of material, consumption 100KWH electric energy can only sputter the target of 0.9mm thickness, and in this way under the same time, deposition rate will
It reduces, therefore, it is necessary to be compensated to sputtering power (being equal to power), meets in the target for sputtering 1mm under the same time
Material demand, may at this time need the electric energy of 120KWH, namely need to compensate the power of 20KW.
Wherein, one end of resistance adapter 5 is connect with the output end of the electric current monitor 3, the resistance adapter 5
The other end is connected with the cathode output end of the power module 1；The sputtering controller 4 is connected in parallel on 3 He of electric current monitor
Between the sliding end of the resistance adapter 5, sputtering controller 4 is adjusted by the resistance to resistance adapter 5, reduces electricity
Resistance, to increase the output electric current of power module 1, to reach the compensation to sputtering power, certainly, the present invention is not limited to output
Electric current is adjusted, and the output voltage of power module 1 can also be adjusted, such as: increase power supply mould by booster
The output voltage of block 1, to realize the compensation to sputtering power.
Wherein, power module 1 includes: sequentially connected power supply unit 11, wave chopping controller 12 and arc-detection and opens
Powered-down road 13；Wherein, one end (input terminal) of power supply unit 11 is connected to three-phase alternating current, for by the three-phase alternating current into
Row rectifying and wave-filtering obtains direct current；One end (input terminal) of wave chopping controller 12 and the other end of the power supply unit 11 are (defeated
Enter end) connection, for the direct current to be changed into the direct current of fixed voltage or adjustable voltage；Arc-detection and switching circuit
13, one end (input terminal) is connect with the other end (output end) of the wave chopping controller 12, the other end (output end) with it is thin
Film sputter chamber 7 connects, the stable discharge of the output voltage for controlling the wave chopping controller 12.
Further, power supply unit 11 includes: power-supply filter 110, rectifier 111, the filter of diode D1112 and first
Wave circuit 113；Three input terminals of the power-supply filter 110 are correspondingly connected with three output ends of three-phase alternating current respectively,
Three output ends of the power-supply filter 110 are respectively correspondingly connected to three input terminals of rectifier 111, the rectifier
111 three output ends are respectively connected to the input terminal of diode D1112；The output end of the diode D1112 and the first filter
Wave circuit 113 connects.Wherein, power-supply filter 110 is to reduce the electromagnetic interference in transmission power supply transmit process.Rectifier
111 be three-phase rectification bridge.
Further, wave chopping controller 12 includes: field-effect tube F1120, transformer 121, the filter of diode D2122 and second
Wave circuit 123；The output end of field-effect tube F1120 is connect with the input terminal of the transformer 121, the transformer 121 it is defeated
Outlet is connect with the input terminal of the diode D2122, the output end of the diode D2122 and second filter circuit
123 connections.Optionally, field-effect tube F1120 is N-channel field-effect tube.
Further, arc-detection and switching circuit 13 include: field-effect tube F2130；The field-effect tube F2130's is defeated
Outlet is connected to sputter gun and the target.Optionally, field-effect tube F2130 is N-channel field-effect tube.
In another embodiment, thin film sputtering control device further include: voltage sampling element 14, current sample element 15
With power-supply controller of electric 16；Voltage sampling element 14 is connect with the power-supply controller of electric 16, for acquiring the power module 1
Output voltage；Current sample element 15 is connect with the power-supply controller of electric 16, for acquiring the input electricity of the power module 1
Stream；Power-supply controller of electric 16 connects with the power supply unit 11, wave chopping controller 12 and arc-detection and switching circuit 13 respectively
Connect, for based on the power module 1 input voltage and input current respectively to the power supply unit 11, the wave chopping control
The output voltage of device 12 processed and the arc-detection and switching circuit 13 and output electric current are controlled, so that output voltage and defeated
Electric current keeps stablizing out.Wherein, voltage sampling element 14 and current sample element 15 can be anti-using Voltage Feedback line and electric current
Feeder line.
In addition, power-supply controller of electric 16 is also connected to rectifier 111 by synchrotrans 17, or directly and rectifier
111 connections.Power-supply controller of electric 16 respectively with the N-channel field-effect tube in wave chopping controller 12 and arc-detection and switching circuit 13
F2130 connection.
Optionally, Profibus bus interface and RS232 interface are additionally provided on power-supply controller of electric 16, be respectively used to outside
The control equipment in portion connects, to realize long-range control.
Optionally, power-supply controller of electric 16 is additionally coupled to operation control panel 6, to realize human-computer interaction.
Fig. 3 is a kind of flow chart of thin film sputtering control method of the embodiment of the present invention.
As shown in figure 3, a kind of thin film sputtering control method, using a kind of thin film sputtering control device to thin film sputtering process
It is controlled, comprising:
S1 acquires the sputtering voltage and sputtering current of target；
S2, sputtering voltage and sputtering current based on the target calculate consumption electricity of the target in sputtering process
Energy；
Wherein, sputtering power is generally preset by power module 1, unit KW, and the consumption electric energy of target is with target
Material sputtering process change, unit KWH.
S3 is worked as based on the data model and the consumption electric energy of the target diameter and consumption electric energy that pre-establish
Preceding target diameter；
S4 is based on the current target diameter, compensates to the sputtering power of the thin film sputtering cavity 7, make to sputter
Rate remained constant.
In embodiments of the present invention, sputtering power is the pre-set parameter of power module 1, generally will not be with target
Consumption influences.But with the consumption of target, magnetic field inside target is to the constraint declines on surface, under same sputtering power
Sputtering yield can reduce, and therefore, can be supplemented according to the size of voltage and current during sputtering come feedback adjustment sputtering power
Deposition rate, to reach the power of meet demand.The data model of target diameter and consumption electric energy are as follows: D-d=α Wt；In formula, D
For initial target diameter, d is current target diameter, and α is that (target of different materials, α value are different, such as metals to constant
The target of material, the target of α 1.5*E-3, IGZO material, the target of α 5.0*E-3, ITO material, α 2.0E-3), it indicates
Target diameter and the consumption electric energy factor, can set based on experience value, and W is consumption electric energy, and t is the time.
Table 1 and Fig. 4 are please referred to, for the Cu target that initial diameter is 183mm, when primary power power is 40KW,
The relationship that electric energy, sputtering thickness and sputter rate (sputter rate=sputtering thickness/sputtering time) are consumed in sputtering process is as follows
Shown in table:
In conjunction with table 1 and Fig. 4, it can be seen that for thin film sputtering cavity, with the progress of sputtering process, target
Diameter can gradually become smaller, and therefore, under same sputtering power, the sputter rate of target can decrease (shown in solid in such as Fig. 4),
And since sputtering power is generally identical as power, power be again it is pre-set, will not be by the shadow of sputtering process
It rings, therefore can be by the power of increase power module 1, Lai Zeng great sputtering power, in this way, can guarantee the perseverance of sputter rate
Fixed (in Fig. 4 shown in dotted line), to guarantee thicknesses of layers requirement.
In of the invention one optional embodiment, it is based on the current target diameter, to the thin film sputtering chamber
When the sputtering power of body 7 compensates, compensated sputtering power can be calculated according to following functional relation: V=(D-d)/2t
=(D-d) * P/2W；
Wherein, V is sputter rate, and D is initial diameter, and d is current target diameter, and P is sputtering power, and W is consumption electric energy.
Based on above-mentioned functional relation, a PLC program can be imported in power source internal and compensated, as target is straight
The reduction of diameter, consuming the increase of electric energy will make deposition rate constant in the case that deposition rate reduces, can be to sputtering function
Rate P is regulated and controled, i.e. increase power to sputter rate reaches constant, is maintained deposition rate constant to realize, is being passed through
After compensated sputtering power is calculated in above-mentioned functional relation, current sputtering power is subtracted with compensated sputtering power, i.e.,
Compensation rate can be obtained.
It should be understood that above-mentioned specific embodiment of the invention is used only for exemplary illustration or explains of the invention
Principle, but not to limit the present invention.Therefore, that is done without departing from the spirit and scope of the present invention is any
Modification, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.In addition, appended claims purport of the present invention
Covering the whole variations fallen into attached claim scope and boundary or this range and the equivalent form on boundary and is repairing
Change example.
Claims (10)
1. a kind of thin film sputtering control device characterized by comprising
Power module (1), anode are connected to the anode of thin film sputtering cavity (7), and cathode is connected to thin film sputtering cavity (7)
Cathode；
Voltage monitor (2) is parallel-connected between the anode and cathode of the power module (1), for obtaining the film
The sputtering voltage of sputter chamber (7)；
Electric current monitor (3) is connected in series to the cathode of the power module (1) and the cathode of the thin film sputtering cavity (7)
Between, for obtaining the sputtering current of the thin film sputtering cavity (7)；
It sputters controller (4), is electrically connected respectively to the power module (1), voltage monitor (2) and electric current monitor (3), use
In sputtering voltage and sputtering current according to the thin film sputtering cavity (7), the sputtering function of the thin film sputtering cavity (7) is compensated
Rate keeps sputter rate constant.
2. a kind of thin film sputtering control device according to claim 1, which is characterized in that further include: resistance adapter
(5)；
One end of the resistance adapter (5) is connect with the electric current monitor (3), the other end of the resistance adapter (5)
It is connected with the cathode of the power module (1)；
Sputtering controller (4) is connected in parallel on the both ends of the electric current monitor (3) and the resistance adapter (5).
3. a kind of thin film sputtering control device according to claim 1 or 2, which is characterized in that power module (1) packet
It includes:
Power supply unit (11), one end is connected to three-phase alternating current, for obtaining three-phase alternating current progress rectifying and wave-filtering
To unidirectional voltage and unidirectional current；
Wave chopping controller (12), one end are connect with the other end of the power supply unit (11), for turning the direct current
Become the direct current of fixed voltage or adjustable voltage；
Arc-detection and switching circuit (13), one end are connect with the other end of the wave chopping controller (12), the other end with
Thin film sputtering cavity (7) connection, the stable discharge of the output voltage for controlling the wave chopping controller (12).
4. a kind of thin film sputtering control device according to claim 1-3, which is characterized in that the power supply supply
Device (11) includes: power-supply filter (110), rectifier (111), diode D1 (112) and the first filter circuit (113)；
The output end connection corresponding with three-phase alternating current respectively of three ends of the power-supply filter (110), the power supply filter
Three output ends of wave device (110) are respectively connected to the corresponding input terminal of rectifier (111)；
Three output ends of the rectifier (111) are respectively connected to the input terminal of the diode D1 (112)；
The output end of the diode (112) is connect with first filter circuit (113).
5. a kind of thin film sputtering control device according to claim 1-4, which is characterized in that the wave chopping control
Device (12) includes: field-effect tube F1 (120), transformer (121), diode D2 (122) and the second filter circuit (123)；
The output end of the field-effect tube F1 (120) is connect with the input terminal of the transformer (121), the transformer (121)
Output end connect with the input terminal of the diode D2 (122), the output end of the diode D2 (122) and it is described second filter
Wave circuit (123) connection.
6. a kind of thin film sputtering control device according to claim 1-5, which is characterized in that the arc-detection
It include: (130) field-effect tube F2 with switching circuit (13)；
The output end of the field-effect tube F2 (130) is connected to the sputter gun and the target.
7. a kind of thin film sputtering control device according to claim 4, which is characterized in that the power module (1) is also wrapped
It includes: voltage sampling element (14), current sample element (15) and power-supply controller of electric (16)；
The voltage sampling element (14), connect with the power-supply controller of electric (16), for acquiring the defeated of the power module (1)
Voltage out；
The current sample element (15), connect with the power-supply controller of electric (16), for acquiring the defeated of the power module (1)
Electric current out；
The power-supply controller of electric (16), respectively with the power supply unit (11), wave chopping controller (12) and arc-detection and open
Powered-down road (13) connection, input voltage and input current for being based on the power module (1) respectively supply the power supply
The output voltage of device (11), the wave chopping controller (12) and the arc-detection and switching circuit (13) and output electric current carry out
Control, so that output voltage and output electric current keep stablizing.
8. a kind of thin film sputtering control method, using a kind of thin film sputtering control dress such as of any of claims 1-7
It sets and thin film sputtering process is controlled characterized by comprising
Acquire the sputtering voltage and sputtering current of target；
Sputtering voltage and sputtering current based on the target calculate consumption electric energy of the target in sputtering process；
Based on the data model and the consumption electric energy of the target diameter and consumption electric energy that pre-establish, current target is obtained
Diameter；
Based on the current target diameter, the sputtering power of the thin film sputtering cavity (7) is compensated, sputter rate is protected
It holds constant.
9. a kind of thin film sputtering control method according to claim 8, which is characterized in that the target diameter and consumption electricity
The data model of energy are as follows:
D-d=α Wt；
In formula, D is initial target diameter, and d is current target diameter, and α is constant, is target diameter and the consumption electric energy factor, and W is
Electric energy is consumed, t is the time.
10. a kind of thin film sputtering control method according to claim 8, which is characterized in that described to work as front target based on described
Material diameter, when compensating to the sputtering power of the thin film sputtering cavity (7), compensated sputtering power is according to following equation
Formula calculates:
V=(D-d) * P/2W；
Wherein, V is sputter rate, and D is initial diameter, and d is actual diameter, and P is sputtering power, and W is consumption electric energy.
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| CN201910086197.8A CN109722638A (en) | 2019-01-29 | 2019-01-29 | A kind of thin film sputtering control device and method |
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| CN201910086197.8A CN109722638A (en) | 2019-01-29 | 2019-01-29 | A kind of thin film sputtering control device and method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111607773A (en) * | 2020-07-02 | 2020-09-01 | 苏州锐世讯光学科技有限公司 | Vacuum sputtering coating and process thereof |
| CN113584442A (en) * | 2021-08-16 | 2021-11-02 | 中科微机电技术（北京）有限公司 | Reactive sputtering apparatus including control system and reactive sputtering method |
| CN114277341A (en) * | 2021-12-24 | 2022-04-05 | 北京北方华创微电子装备有限公司 | Power supply assembly, power supply control method and sputtering apparatus |
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| CN1039070A (en) * | 1988-06-28 | 1990-01-24 | 中国科学院北京真空物理实验室 | Adjustable subtend controlled sputtering source and film coating method thereof |
| JP2000144417A (en) * | 1998-11-13 | 2000-05-26 | Canon Inc | High frequency sputtering device |
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- 2019-01-29 CN CN201910086197.8A patent/CN109722638A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1039070A (en) * | 1988-06-28 | 1990-01-24 | 中国科学院北京真空物理实验室 | Adjustable subtend controlled sputtering source and film coating method thereof |
| JP2000144417A (en) * | 1998-11-13 | 2000-05-26 | Canon Inc | High frequency sputtering device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111607773A (en) * | 2020-07-02 | 2020-09-01 | 苏州锐世讯光学科技有限公司 | Vacuum sputtering coating and process thereof |
| CN113584442A (en) * | 2021-08-16 | 2021-11-02 | 中科微机电技术（北京）有限公司 | Reactive sputtering apparatus including control system and reactive sputtering method |
| CN114277341A (en) * | 2021-12-24 | 2022-04-05 | 北京北方华创微电子装备有限公司 | Power supply assembly, power supply control method and sputtering apparatus |
| CN114277341B (en) * | 2021-12-24 | 2023-09-08 | 北京北方华创微电子装备有限公司 | Power supply assembly, power supply control method and sputtering equipment |
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