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CN109712601A - The reversed driving circuit burnt of power supply and ground is prevented for buzzer low start voltage - Google Patents

The reversed driving circuit burnt of power supply and ground is prevented for buzzer low start voltage Download PDF

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Publication number
CN109712601A
CN109712601A CN201811257304.0A CN201811257304A CN109712601A CN 109712601 A CN109712601 A CN 109712601A CN 201811257304 A CN201811257304 A CN 201811257304A CN 109712601 A CN109712601 A CN 109712601A
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substrate
current
limiting resistance
driving
power supply
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CN201811257304.0A
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CN109712601B (en
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张怀东
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Wuxi Tianji Core Technology Co Ltd
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Wuxi Tianji Core Technology Co Ltd
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Abstract

本发明提供一种用于蜂鸣器低启动电压防止电源与地接反烧毁的驱动电路,包括衬底限流电阻R2、驱动NMOS管、限流电阻R1、内部电路,所述驱动NMOS管的源极连接到地线且漏极连接到输出端,所述驱动NMOS管的衬底通过所述衬底限流电阻R2连接到所述驱动NMOS管的源极上,所述内部电路通过限流电阻R1连接到电源。本发明在MOS管的衬底通过一个衬底限流电阻连接到源端,以及内部电路通过限流电阻R1供电,使得当电源线与地线接反时可以大幅度降低功耗,从而防止电路被烧毁。正常使用时所述驱动NMOS管的衬底与源端之间的衬底限流电阻R2不会过大增加驱动NMOS管源端与漏端之间的阻值,以及适当选取限流电阻,使得本发明的驱动电路在很低的电压下即可启动工作。

The present invention provides a driving circuit for a buzzer with low start-up voltage to prevent the power supply and the ground from being reversed and burned, including a substrate current limiting resistor R2, a driving NMOS tube, a current limiting resistor R1, and an internal circuit. The source is connected to the ground line and the drain is connected to the output terminal, the substrate of the driving NMOS transistor is connected to the source of the driving NMOS transistor through the substrate current limiting resistor R2, and the internal circuit is limited by the current Resistor R1 is connected to the power supply. In the present invention, the substrate of the MOS tube is connected to the source terminal through a substrate current limiting resistor, and the internal circuit is powered by the current limiting resistor R1, so that the power consumption can be greatly reduced when the power line and the ground line are reversely connected, thereby preventing the circuit was burned. In normal use, the substrate current limiting resistor R2 between the substrate and the source end of the driving NMOS tube will not increase the resistance value between the source end and the drain end of the driving NMOS tube too much, and the current limiting resistor is appropriately selected, so that The driving circuit of the present invention can start to work at a very low voltage.

Description

The reversed driving circuit burnt of power supply and ground is prevented for buzzer low start voltage
Technical field
The present invention relates to a kind of buzzer circuit fields, and in particular to one kind prevents power supply for buzzer low start voltage With the reversed driving circuit burnt in ground.
Background technique
Traditional circuit for preventing power supply line reversed with ground wire and chip being caused to burn, as shown in Figure 1.For in internal circuit With driving driving NMOS tube one diode D of series connection, when power supply line and ground wire are reversed, i.e. the power supply line of chip is arrived by misconnection Ground wire, for the ground wire of chip by misconnection to power supply line, diode D is reverse-biased, be in off state, thus reach prevent power supply line with The purpose that ground wire is reversed and chip is caused to burn.The shortcomings that this circuit, is: when normal work, the starting voltage of chip than High diode forward conducting voltage when not having a diode D.
Summary of the invention
The present invention provide it is a kind of prevent the reversed driving circuit burnt of power supply and ground for buzzer low start voltage, with solution Certainly the prior art is preventing power supply line and ground wire is reversed and while causing chip to burn existing driving circuit starting voltage of raising Problem.
In order to solve the above technical problems, as shown in Fig. 2, the present invention, which provides one kind, prevents electricity for buzzer low start voltage The reversed driving circuit burnt in source and ground, including substrate current-limiting resistance R2, current-limiting resistance R1, driving NMOS tube, internal circuit, The source electrode of the driving NMOS tube, which is connected to ground wire and drains, is connected to output end, the electromagnetic coil of output end external buzzer, The substrate of the driving NMOS tube is connected on the source electrode of the driving NMOS tube by the substrate current-limiting resistance R2, described Internal circuit is connected to power supply by current-limiting resistance R1, i.e. internal circuit is powered by current-limiting resistance R1, and the internal circuit is Other circuit modules of frequency correction module, oscillator, frequency divider etc. and module of the present invention in same chip.
Preferably, the substrate current-limiting resistance R2 is parasitic resistance substrate, increases the driving NMOS tube and connects with substrate The distance between touching and the driving draining end of NMOS tube, typically greater than two of the minimum value of design rule times or more, to improve The resistance value of the substrate parasitics current-limiting resistance.
Preferably, the substrate current-limiting resistance R2 is replaced using diode, and the diode of the replacement is connected to described Between the substrate and source electrode for driving NMOS tube, or it is connected between the substrate and ground wire of the driving NMOS tube.
Preferably, the substrate current-limiting resistance R2 is that parasitic resistance substrate and other integrated circuit resistors are connected in series.
Preferably, the current-limiting resistance R1 between the internal circuit and power supply is at least one.
Preferably, when the current-limiting resistance R1 is multiple, each current-limiting resistance R1 respectively corresponds different inside Circuit.
Bring of the present invention is the utility model has the advantages that the present invention passes through a substrate current-limiting resistance connection in the substrate of driving NMOS tube It is supplied to source, or by the resistance value and internal circuit for the parasitic substrate resistance for increasing driving NMOS tube by current-limiting resistance Electricity allows and power consumption is greatly lowered when power supply line and ground wire are reversed, so that circuit be prevented to be burned out.Increase the drive Dynamic NMOS pipe and the distance between substrate contact and the driving draining end of NMOS tube, to improve the parasitic substrate current-limiting resistance Resistance value, this substrate current-limiting resistance can be the combination of dead resistance or other integrated circuit resistors and dead resistance.Just The not too big increase of substrate current-limiting resistance when being often used between the substrate and source of the driving NMOS tube drives NMOS tube source Resistance between end and drain terminal, and appropriate selection are connected to the current-limiting resistance between power supply and internal circuit, so that this The driving circuit of invention can start work under very low voltage.
Detailed description of the invention
The circuit diagram of buzzer in Fig. 1 background technique.
Fig. 2 is electrical block diagram according to the present invention.
Fig. 3 is according to a first embodiment of the present invention to prevent power supply for buzzer low start voltage and ground is reversed burns The structural schematic diagram of driving circuit.
Fig. 4 be according to a second embodiment of the present invention prevent power supply and ground from reversed burning for buzzer low start voltage The structural schematic diagram of driving circuit.
Fig. 5 is the schematic diagram of increase substrate current-limiting resistance according to a third embodiment of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with drawings and the specific embodiments, to this Invention is described in further detail.
As shown in Fig. 2, the present invention provides and a kind of prevents power supply and the reversed drive burnt in ground for buzzer low start voltage Dynamic circuit, including substrate current-limiting resistance R2, current-limiting resistance R1, driving NMOS tube, internal circuit, the source of the driving NMOS tube Pole is connected to ground wire and drain electrode is connected to output end, the electromagnetic coil of output end external buzzer, the lining of the driving NMOS tube Bottom is connected on the source electrode of the driving NMOS tube by the substrate current-limiting resistance R2, and the internal circuit passes through current limliting electricity Resistance R1 is connected to power supply, i.e. internal circuit is powered by current-limiting resistance R1.
Preferably, the substrate current-limiting resistance R2 is parasitic resistance substrate, increases the driving NMOS tube and connects with substrate The distance between touching and the driving draining end of NMOS tube, will increase substrate parasitics resistance, to increase the substrate limit Leakage resistance, typically greater than two times of minimum value of design rule or more.Distance is bigger, and resistance value is bigger.
Preferably, the substrate current-limiting resistance R2 is replaced using diode, and the diode of the replacement is connected to described Between the substrate and source electrode for driving NMOS tube, or it is connected between the substrate and ground wire of the driving NMOS tube.
Preferably, the substrate current-limiting resistance R2 is that parasitic resistance substrate and other integrated circuit resistors are connected in series.
Preferably, the current-limiting resistance R1 between the internal circuit and power supply is at least one.
Preferably, when the current-limiting resistance R1 is multiple, each current-limiting resistance respectively corresponds different inside electricity Road.
The internal circuit is for frequency correction module, oscillator, frequency divider etc. with module of the present invention in same chip Other circuit modules.Generally in addition to port circuit and esd protection circuit, internal circuit power supply passes through current-limiting resistance by power supply R1 is provided, because electric current is little when internal circuit works, the resistance value of current-limiting resistance R1 is also not too big, so current-limiting resistance R1 On voltage it is also little, so that the starting voltage that entire circuit works normally will not be reduced.Assuming that current-limiting resistance R1 is 1000 Europe Nurse, electric current are 0.1 milliampere, then the pressure drop on current-limiting resistance R1 is 0.1 volt, this voltage is far smaller than the positive guide of diode Logical 0.7 volt of pressure drop representative value, when supply voltage is 5 volts, if power supply line is reversed with ground wire, flow through current-limiting resistance R1 and The power consumption of internal circuit is 25 milliwatts, this will not cause to burn to chip circuit, while if power supply line connects with ground wire Instead, the access of substrate to the drain electrode of the driving NMOS tube carries out current limliting by substrate current-limiting resistance, also reduces power consumption, this Chip circuit will not be caused to burn.
First embodiment:
As shown in figure 3, provided by the invention a kind of power supply is prevented for buzzer low start voltage and ground is reversed burns Driving circuit, including current-limiting resistance R1, current-limiting resistance R2, current-limiting resistance R3, internal circuit 1, internal circuit 2, internal circuit 3, Substrate current-limiting resistance R4, driving NMOS tube.Wherein, it is described driving NMOS tube source electrode be connected to ground wire and drain electrode be connected to it is defeated The substrate of outlet, the electromagnetic coil of output end external buzzer, the driving NMOS tube is connected by the substrate current-limiting resistance R4 It is connected on the source electrode of the metal-oxide-semiconductor, the internal circuit 1 is connected to power supply by current-limiting resistance R1, and the internal circuit 2 is logical It crosses current-limiting resistance R2 and is connected to power supply, the internal circuit 3 is connected to power supply by current-limiting resistance R3, i.e. internal circuit passes through Current-limiting resistance power supply.
When power supply line and ground wire are reversed, internal circuit passes through current-limiting resistance R1, current-limiting resistance R2, current-limiting resistance R3 respectively Current limliting is carried out to reduce power consumption, to prevent chip from burning, the access of substrate to the drain electrode of the driving NMOS tube passes through substrate Current-limiting resistance R4 carries out current limliting, power consumption is also reduced, to will not cause to burn to chip circuit.
Second embodiment:
As shown in figure 4, provided by the invention a kind of power supply is prevented for buzzer low start voltage and ground is reversed burns Driving circuit, including current-limiting resistance R1, internal circuit, diode, driving NMOS tube, the source electrode connection of the driving NMOS tube To ground wire and drain electrode is connected to output end, and the substrate of the electromagnetic coil of output end external buzzer, the driving NMOS tube passes through The diode is connected to the source electrode of the driving NMOS tube, or the substrate of driving NMOS tube is connected by the diode To ground wire, the internal circuit is connected to power supply by current-limiting resistance R1, i.e. internal circuit is powered by current-limiting resistance R1.
When power supply line and ground wire are reversed, internal circuit carries out current limliting by current-limiting resistance R1 to reduce power consumption, thus anti- Only chip is burnt, and the access of substrate to the drain electrode of the driving NMOS tube carries out current limliting by diode D, i.e., access, which is in, cuts Only state, to will not cause to burn to chip circuit.
3rd embodiment:
As shown in Figure 1, provided by the invention a kind of power supply is prevented for buzzer low start voltage and ground is reversed burns Driving circuit, including substrate current-limiting resistance R2, current-limiting resistance R1, driving NMOS tube, internal circuit.Wherein, the driving NMOS The source electrode of pipe is connected to ground wire and drain electrode is connected to output end, the electromagnetic coil of output end external buzzer, the driving NMOS The substrate of pipe is connected on the source electrode of the driving NMOS tube by the substrate current-limiting resistance R2, and the internal circuit passes through Current-limiting resistance R1 is connected to power supply, i.e. internal circuit is powered by current-limiting resistance R1.
As shown in Figure 1, substrate current-limiting resistance R2 is parasitic substrate resistance, as shown in figure 5, increasing the driving NMOS tube With the distance between substrate contact and the driving draining end of NMOS tube, substrate parasitics resistance will increase, to increase Fig. 1 The substrate current-limiting resistance R2, typically greater than two times of minimum value of design rule or more.Distance is bigger, and resistance value is bigger.
In conclusion the present invention is connected to source by a substrate current-limiting resistance in the substrate of driving NMOS tube, and Internal circuit is powered by current-limiting resistance, allows and power consumption is greatly lowered when power supply line and ground wire are reversed, to prevent Circuit is burned out.The not too big increasing of substrate current-limiting resistance when normal use between the substrate and source of the driving NMOS tube The resistance between driving NMOS tube source and drain terminal, and appropriate selection is added to be connected to the current limliting between power supply and internal circuit Resistance, so that driving circuit of the invention can start work under very low voltage.
The above description is only an embodiment of the present invention, is not intended to restrict the invention, for those skilled in the art For member, the invention may be variously modified and varied.All within the spirits and principles of the present invention, it is made it is any modification, Equivalent replacement, improvement etc., should be included within scope of the presently claimed invention.

Claims (6)

1. a kind of prevent the reversed driving circuit burnt of power supply and ground for buzzer low start voltage, which is characterized in that including The source electrode of substrate current-limiting resistance R2, current-limiting resistance R1, driving NMOS tube, internal circuit, the driving NMOS tube is connected to ground wire And drain electrode is connected to output end, the substrate of the electromagnetic coil of output end external buzzer, the driving NMOS tube passes through the lining Lowest limit leakage resistance R2 is connected on the source electrode of the driving NMOS tube, and the internal circuit is connected to electricity by current-limiting resistance R1 Source, i.e. internal circuit are powered by current-limiting resistance R1, the internal circuit be frequency correction module, oscillator, frequency divider etc. with Other circuit modules of module of the present invention in same chip.
2. the reversed driving circuit burnt of power supply and ground is prevented for buzzer low start voltage as described in claim 1, It is characterized in that, the substrate current-limiting resistance R2 is parasitic resistance substrate, increases the driving NMOS tube and substrate contact and institute The distance between driving draining end of NMOS tube, typically greater than two of the minimum value of design rule times or more are stated, to improve the lining The resistance value of lowest limit leakage resistance R2.
3. the reversed driving circuit burnt of power supply and ground is prevented for buzzer low start voltage as claimed in claim 2, It is characterized in that, the substrate current-limiting resistance R2 is replaced using diode, and the diode of the replacement is connected to the driving Between the substrate and source electrode of NMOS tube, or it is connected between the substrate and ground wire of the driving NMOS tube.
4. the reversed driving circuit burnt of power supply and ground is prevented for buzzer low start voltage as claimed in claim 3, It is characterized in that, the substrate current-limiting resistance R2 is that parasitic resistance substrate and other integrated circuit resistors are connected in series.
5. the reversed driving circuit burnt of power supply and ground is prevented for buzzer low start voltage as claimed in claim 4, It is characterized in that, the current-limiting resistance R1 between the internal circuit and power supply is at least one.
6. the reversed driving circuit burnt of power supply and ground is prevented for buzzer low start voltage as claimed in claim 5, It is characterized in that, when the current-limiting resistance R1 is multiple, each current-limiting resistance respectively corresponds different internal circuits.
CN201811257304.0A 2018-10-26 2018-10-26 A driving circuit for buzzer with low starting voltage to prevent burning caused by reverse connection of power supply and ground Active CN109712601B (en)

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CN112865056A (en) * 2021-03-18 2021-05-28 无锡天极芯科技有限公司 Electrostatic protection circuit based on buzzer driving chip power supply
CN115513928A (en) * 2021-06-07 2022-12-23 中国科学院微电子研究所 High-side power switch and electronic equipment
CN116564914A (en) * 2023-05-12 2023-08-08 东科半导体(安徽)股份有限公司 Silicon-based GaN switching tube, method for improving voltage withstand of silicon-based GaN switching tube and application

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Publication number Priority date Publication date Assignee Title
CN112865056A (en) * 2021-03-18 2021-05-28 无锡天极芯科技有限公司 Electrostatic protection circuit based on buzzer driving chip power supply
CN115513928A (en) * 2021-06-07 2022-12-23 中国科学院微电子研究所 High-side power switch and electronic equipment
CN116564914A (en) * 2023-05-12 2023-08-08 东科半导体(安徽)股份有限公司 Silicon-based GaN switching tube, method for improving voltage withstand of silicon-based GaN switching tube and application
CN116564914B (en) * 2023-05-12 2024-03-26 东科半导体(安徽)股份有限公司 Silicon-based GaN switching tube, method for improving voltage withstand of silicon-based GaN switching tube and application

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