CN109659412A - Semiconductor light-emitting elements - Google Patents
Semiconductor light-emitting elements Download PDFInfo
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- CN109659412A CN109659412A CN201811228259.6A CN201811228259A CN109659412A CN 109659412 A CN109659412 A CN 109659412A CN 201811228259 A CN201811228259 A CN 201811228259A CN 109659412 A CN109659412 A CN 109659412A
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- semiconductor
- emitting elements
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- semiconductor light
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 154
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- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 20
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- 239000010931 gold Substances 0.000 description 15
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- 229910052790 beryllium Inorganic materials 0.000 description 5
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 5
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- 229910052763 palladium Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 5
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- 239000010937 tungsten Substances 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
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- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 230000002146 bilateral effect Effects 0.000 description 2
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- 238000001816 cooling Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
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- 239000004332 silver Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
Landscapes
- Led Devices (AREA)
Abstract
The present invention discloses a kind of semiconductor light-emitting elements, includes: semiconductor is laminated to have a first surface, and wherein first surface includes multiple protruding portion and multiple recess portions；One first electrode is located on first surface to be electrically connected with semiconductor laminated；One second electrode is located on first surface to be electrically connected with semiconductor laminated；One transparency conducting layer conformally covers first surface, and be located at first electrode and it is semiconductor laminated between, wherein first electrode includes that one first weld part and one first extension, the first extending part conformally cover transparency conducting layer between the first weld part and transparency conducting layer.
Description
The application, which is that application No. is 201310595821.X, the applyings date, to be on November 22nd, 2013, entitled " partly lead
The divisional application of the application for a patent for invention of body light-emitting component ".
Technical field
The present invention relates to a kind of structures of semiconductor light-emitting elements.
Background technique
Light emitting diode (Light-emitting Diode；LED) at present be widely used in optical display,
In traffic sign, data memory device, communication device, lighting device and medical equipment.As shown in figure 5, LED has a N-shaped half
Conductor layer 1104, an active layers 1106 and a p-type semiconductor layer 1108 are sequentially formed on a substrate 1102, part of p-type half
Conductor layer 1108 and active layers 1106 are removed with exposed portion n-type semiconductor layer 1104, a p-type electrode a1 and a n-type electrode
A2 is respectively formed on p-type semiconductor layer 1108 and n-type semiconductor layer 1104.Because n-type electrode a2 needs enough areas
Luminous efficiency is caused to drop so the active layers 1106 of quite component are removed with the progress of sharp subsequent manufacturing processes, such as routing
It is low.
In addition, above-mentioned LED can combine connection with other elements further more to form a light emitting device (light-
emitting apparatus).Fig. 6 is existing luminous device structure schematic diagram, as shown in fig. 6, a light emitting device 1200 wraps
Secondary carrier (sub-mount) 1202 containing one with an at least circuit 1204；An at least solder 1206 (solder) is located at above-mentioned
On secondary carrier 12 02, above-mentioned LED 1210 is adhesively fixed on secondary carrier 12 02 and making LED's 1210 by this solder 1206
Substrate 1212 is electrically connected with the formation of circuit 1204 on time carrier 12 02；And an electric connection structure 1208, to be electrically connected LED
Circuit 1204 on 1210 electrode 1214 and time carrier 12 02；Wherein, above-mentioned secondary carrier 12 02 can be lead frame (lead
Frame) or large scale inlays substrate (mounting substrate), so that the circuit of light emitting device is planned and improves its heat dissipation
Effect.
Summary of the invention
The present invention discloses a kind of semiconductor light-emitting elements, includes: semiconductor lamination has a first surface, wherein first
Surface includes multiple protruding portion and multiple recess portions；One first electrode is located on first surface to be electrically connected with semiconductor laminated；One
Two electrodes are located on first surface to be electrically connected with semiconductor laminated；One transparency conducting layer conformally covers first surface, and is located at
First electrode and it is semiconductor laminated between, wherein first electrode include one first weld part and one first extension, first extension
Portion conformally covers transparency conducting layer between the first weld part and transparency conducting layer.
Detailed description of the invention
Figure 1A is the schematic diagram according to the semiconductor light-emitting elements structure I of first embodiment of the invention；
Figure 1B is the top view according to the semiconductor light-emitting elements structure I of first embodiment of the invention；
Fig. 2 is the schematic diagram according to the semiconductor light-emitting elements structure I I of second embodiment of the invention；
Fig. 3 is the schematic diagram according to the semiconductor light-emitting elements structure III of third embodiment of the invention；
Fig. 4 A to Fig. 4 D is the manufacture craft schematic diagram of semiconductor light-emitting elements of the invention；
Fig. 5 is the cross-sectional view of existing LED；
Fig. 6 is existing luminous device structure schematic diagram；
Fig. 7 is the structural schematic diagram according to another embodiment of the present invention；
Fig. 8 A is the schematic diagram according to the semiconductor light-emitting elements structure I V of first embodiment of the invention；
Fig. 8 B is the top view according to the semiconductor light-emitting elements structure I V of first embodiment of the invention.
Symbol description
1 semiconductor laminated 53 second weld part
10 active layers, 54 contact structures
11 first semiconductor layer, 61 first insulating layer
12 second semiconductor layer, 7 gap
13 first surface, 8 substrate
131 protruding portion, 81 growth substrate
1312 bevel edge, 9 adhesive layer
1313 platform, 91 first adhesive layer
132 recess portion, 92 second adhesive layer
14 second surface, 600 bulb lamp
141 groove, 602 lampshade
15 first side, 604 lens
16 second side, 606 supporting part
161 vacancy, 608 semiconductor light-emitting elements
17 side, 610 light emitting module
18 corner, 612 lamp holder
19 corner, 614 cooling fin
2 contact structures, 616 interconnecting piece
3 transparency conducting layer H vertical direction
31 hyaline layer, 1102 substrate
4 first electrode, 1104 n-type semiconductor layer
41 first extension, 1106 active layers
410 convex-concave surface, 1108 p-type semiconductor layer
411 convex-concave surface a1 p-type electrodes
42 first connecting portion a2 n-type electrodes
43 first weld part, 1200 light emitting device
5 carriers of second electrode 1202 times
51 second extension, 1204 circuit
511 first extending electrode, 1206 solder
512 second extending electrode, 1208 electric connection structure
52 second connecting portion, 1210 LED
Specific embodiment
First embodiment
Figure 1A is the schematic diagram according to the semiconductor light-emitting elements structure I of first embodiment of the invention.Implement according to the present invention
Semiconductor light-emitting elements disclosed in example are a flip-over type light-emitting diode with groove reflection mirror.Semiconductor light emitting element
Part includes that semiconductor lamination 1 has a first surface 13 and a second surface 14 relative to first surface 13.Semiconductor laminated 1
Comprising one first semiconductor layer 11, one second semiconductor layer 12 and an active layers 10 are located at the first semiconductor layer 11 and the second half lead
Between body layer 12, wherein first surface 13 is the surface of the first semiconductor layer 11, and second surface 14 is the second semiconductor layer 12
Surface.First semiconductor layer 11 and the second semiconductor layer 12 have different conductivities, electrical property, polarity or the element according to doping
Difference to provide electronics or hole；Active layers 10 are formed between the first semiconductor layer 11 and the second semiconductor layer 12, actively
Layer 10 converts electric energy to luminous energy.By changing semiconductor laminated 1, wherein one or more layers physics and chemical composition are adjustable
The optical wavelength of sending.Forming semiconductor laminated 1 common material is AlGaInP (aluminum gallium indium
Phosphide, AlGaInP) series, aluminum indium gallium nitride (aluminum gallium indium nitride, AlGaInN) system
Column, zinc oxide are serial (zinc oxide, ZnO).Active layers 10 can for single heterojunction structure (single heterostructure,
SH), double-heterostructure (double heterostructure, DH), bilateral double heterojunction (double-side double
Heterostructure, DDH), multi layer quantum well (multi-quantum well, MWQ).Specifically, active layers 10 can be
Neutral, p-type or N-shaped electrical property semiconductor.When imposing electric current by semiconductor laminated 1, active layers 10 can shine.When active layers 10
Material when being AlGaInP (AlGaInP) serial, the light of red, orange, yellow light amber colour system can be issued；When for aluminium gallium nitride alloy
When indium (AlGaInN) is serial, blue or green light can be issued.In the present embodiment, semiconductor laminated 1 material is AlGaInP
(aluminum gallium indium phosphide, AlGaInP) series.
On semiconductor laminated 1 first surface 13 there is multiple protruding portion 131 to interact arrangement with multiple recess portions 132, often
One multiple protruding portion 131 is all comprising a platform 1313 and an at least bevel edge 1312, plane of the bevel edge 1312 relative to recess portion 132
With a tilt angle theta between 15 degree to 75 degree, protruding portion 131 relative to 132 plane of recess portion height between 500nm~
Between 5000nm.At least 11 Ohmic contact of a contact structures 2 and the first semiconductor layer, this reality are set on each platform 1313
It applies in example, the material of contact structures 2 includes germanium (Ge), beryllium (Be), golden (Au), nickel (Ni), palladium (Pd), zinc (Zn) or its alloy.
On first surface 13, a transparency conducting layer 3 conformally covers first surface 13 and is electrically connected with contact structures 2
Touching.The material of transparency conducting layer 3 include tin indium oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin (CTO),
Antimony tin (ATO), zinc oxide aluminum (AZO), zinc-tin oxide (ZTO), zinc oxide (ZnO) or gallium phosphide (GaP).
One first electrode 4 is formed on first surface 13, and first electrode 4 is welded comprising one first extension 41, one first
Portion 43 and a first connecting portion 42, first connecting portion 42 are formed in connection first on semiconductor laminated 1 first side 15 and prolong
Extending portion 41 and the first weld part 43, wherein the first extension 41 conformally cover transparency conducting layer 3 and with 3 ohm of transparency conducting layer
Contact has a convex-concave surface 410, the first extension 41 since the first extension 41 conformally covers transparency conducting layer 3
To be formed with high-reflectivity metal, the light issued to reflect active layers 10 projects light from second surface 14, simultaneously
Convex-concave surface 410 can more concentrate the light of reflection towards vertical direction H.One first insulating layer 61 be formed in the first extension 41 and
Between first weld part 43, cover the first extension 41 and extend over semiconductor laminated 1 second side 16.Because first
41 syntype of extension is formed by convex-concave surface 411 in first surface 13, is filled and led up by the first insulating layer 61.First weld part 43
And the material of first connecting portion 42 is different from the material of the first extension 41, the material of the first weld part 43 and first connecting portion 42
Material includes titanium (Ti), tungsten (W), platinum (Pt), nickel (Ni), tin (Sn), golden (Au) or its alloy；The material of first extension 41 includes
The higher metal material of reflectivity, such as silver-colored (Ag), golden (Au), aluminium (Al), nickel (Ni), tin (Sn), copper (Cu), titanium (Ti) or platinum
(Pt) lamination or alloy of metal materials such as；The material of first insulating layer 61 is including but not limited to organic material, such as Su8, benzene
And cyclobutane (BCB), excessively fluorine cyclobutane (PFCB), epoxy resin (Epoxy), acrylic resin (Acrylic Resin), cyclenes
Hydrocarbon polymer (COC), polyethylene terephthalate (PET), polycarbonate (PC), gathers polymethyl methacrylate (PMMA)
Etherimide (Polyetherimide), fluorocarbon polymer (Fluorocarbon Polymer)；Inorganic material, such as silica gel
(Silicone), glass (Glass) or dielectric material, such as aluminium oxide (Al2O3), silicon nitride (SiNx), silica (SiO2)、
Titanium oxide (TiO2) or magnesium fluoride (MgF2)。
One second electrode 5 includes one second extension 51 on semiconductor laminated 1 second surface 14, one second welding
Portion 53 is on semiconductor laminated 1 first surface 13 and a second connecting portion 52 is formed in semiconductor laminated 1 second side
The second extension 51 and the second weld part 53 are connected on side 16.Semiconductor laminated 1 second surface 14 has multiple grooves 141,
Multiple grooves 141 correspond to the recess portion 132 of first surface 13 on vertical direction H, and the second extension 51 is arranged in multiple grooves
With 12 Ohmic contact of the second semiconductor layer in 141, the second weld part 53 is located on first surface 13, by the first insulating layer 61 with
First extension 41 and transparency conducting layer 3 separate, and have a gap 7 to incite somebody to action between the second weld part 53 and the first weld part 43
Second weld part 53 and the first weld part 43 separate, and the width in gap 7 is between 70 μm~250 μm.Work as semiconductor light emitting element
The shape of part be a side length 12mil it is rectangular when, the area summation of the first weld part 43 and the second weld part 53 is about partly
Between the area 15%~80% of conductor light-emitting component；When the shape of semiconductor light-emitting elements is the rectangular of a side length 28mil
When, the area summation of the first weld part 43 and the second weld part 53 be about the area of semiconductor light-emitting elements area 60%~
Between 92%；When the shape of semiconductor light-emitting elements be a side length 40mil it is rectangular when, the first weld part 43 is welded with second
The area summation of socket part 53 is about between the area 75%~95% of semiconductor light-emitting elements.Second connecting portion 52, which is formed in, partly to be led
The second side 16 of body lamination 1, between second connecting portion 52 and semiconductor laminated 1 second side 16 with the first insulating layer 61 every
It opens.Figure 1B show the semiconductor light-emitting elements structure I top view of first embodiment of the invention, and the second extension 51 includes multiple
First extending electrode 511 and at least one second extending electrode 512 parallel to each other, the second extending electrode 512 and multiple first
Extending electrode 511 intersects vertically, and is electrically connected with the second connecting portion 52 in the corner 18 and corner 19 that are arranged in semiconductor laminated 1
Connect, the second extending electrode 512 near and parallel to semiconductor laminated 1 a side 17, the second extending electrode 512 and multiple first
Extending electrode 511 is not Chong Die with all contact structures 2 on vertical direction H.The material of second extension 51 includes metal, example
Such as golden (Au), germanium (Ge), beryllium (Be), nickel (Ni), palladium (Pd), zinc (Zn) or its alloy or transparent oxide, such as tin indium oxide
(ITO), indium oxide (InO), tin oxide (SnO), cadmium tin (CTO), antimony tin (ATO), zinc oxide aluminum (AZO), oxidation
Zinc-tin (ZTO) or zinc oxide (ZnO)；Second weld part 53 and the material of second connecting portion 52 include titanium (Ti), tungsten (W), platinum
(Pt), nickel (Ni), tin (Sn), golden (Au) or its alloy.
Adhesive layer 9 is covered in second surface 14, the second extension 51 and second connecting portion 52, substrate 8 by with bonding
9 fitting of layer is formed on second surface 14, and the light that active layers 10 are issued can all penetrate adhesive layer 9 and substrate 8.Adhesive layer 9
Material includes that the light issued for active layers 10 is transparent material, includes organic material, such as Su8, benzocyclobutene
(BCB), fluorine cyclobutane (PFCB), epoxy resin (Epoxy), acrylic resin (Acrylic Resin), cyclic olefin polymer are crossed
(COC), polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide
(Polyetherimide), fluorocarbon polymer (Fluorocarbon Polymer)；Inorganic material, such as silica gel
(Silicone), glass (Glass), dielectric material, such as aluminium oxide (Al2O3), silicon nitride (SiNx), silica (SiO2), oxygen
Change titanium (TiO2) or magnesium fluoride (MgF2).The material of substrate 8 includes that the light issued for active layers 10 is transparent material, example
Such as GaAs (GaAs), gallium phosphide (GaP), gallium nitride (GaN), sapphire (Sapphire), diamond (Diamond), glass
(Glass), quartz (Quartz), acryl (Acryl), zinc oxide (ZnO) or aluminium nitride (AlN) etc..
In another embodiment, a transparency conducting layer is set between adhesive layer 9 and second surface 14 and (is not depicted in attached drawing
In) be electrically connected with the second semiconductor layer 12 and the second extension 51, to assist cross conduction electric current, it can reduce by the second extension
The area in portion 51, or even the second extension 51 is replaced to increase light ratio out to reduce 51 shading-area of the second extension.It is transparent
The material of conductive layer is including but not limited to including tin indium oxide (ITO), indium oxide (InO), indium zinc oxide (IZO), tin oxide
(SnO), cadmium tin (CTO), antimony tin (ATO), zinc oxide aluminum (AZO), zinc-tin oxide (ZTO), zinc oxide (ZnO) or phosphorus
Change the material of gallium (GaP).
Second embodiment
Fig. 2 is the schematic diagram according to the semiconductor light-emitting elements structure I I of second embodiment of the invention.Second embodiment institute is public
The difference of the semiconductor light-emitting elements structure I of the semiconductor light-emitting elements structure I I opened and first embodiment is that semiconductor is sent out
Optical element structure I I increases by a hyaline layer 31 and is formed between transparency conducting layer 3 and first surface 13, and hyaline layer 31 conformally covers
Lid first surface 13 simultaneously exposes contact structures 2, contacts contact structures 2 directly with transparency conducting layer 3.The refractive index of hyaline layer 31
Less than transparency conducting layer 3, it is preferred that refractive index is less than 1.5, to increase the reflectivity of light issued for active layers.It is transparent
The material of layer 31 is including but not limited to transparent inorganic material, such as silica (SiOx), silicon nitride (SiNx), magnesium fluoride (MgF2),
Or transparent organic material, such as silicone resin, epoxy resin (Epoxy), polyimide (Polyimide) or mistake fluorine cyclobutane
(PFCB)。
3rd embodiment
Fig. 3 is the schematic diagram according to the semiconductor light-emitting elements structure III of third embodiment of the invention.3rd embodiment institute is public
The difference of the semiconductor light-emitting elements structure I of the semiconductor light-emitting elements structure III and first embodiment opened is that semiconductor is sent out
In optical element structure III, the hyaline layer 31 for exposing contact structures 2 between the first extension 41 and first surface 13 for one,
Link contact structures 2 and the first extension 41, allows the electric current for flowing through semiconductor laminated 1 to enter first by contact structures 2 and prolong
Extending portion 41.The material of hyaline layer 31 is as recorded in aforementioned second embodiment, including but not limited to transparent inorganic material, such as aoxidizes
Silicon (SiOx) or silicon nitride (SiNx), magnesium fluoride (MgF2) or transparent organic material, such as silicone resin, benzocyclobutene (BCB),
Epoxy resin (Epoxy), polyimide (Polyimide) cross fluorine cyclobutane (PFCB).
Manufacture craft embodiment
Fig. 4 A to Fig. 4 D is the manufacture craft schematic diagram of semiconductor light-emitting elements of the invention.As shown in Figure 4 A, one is provided
Growth substrate 81, forming semiconductor lamination 1 includes that the first semiconductor layer 11, active layers 10 and the second semiconductor layer 12 are being grown up
On substrate 81, wherein in material and first embodiment that the first semiconductor layer 11, active layers 10 and the second semiconductor layer 12 include
Record identical, the material of growth substrate 81 includes sapphire (Sapphire), silicon carbide (SiC), gallium nitride (GaN), GaAs
(GaAs) or gallium phosphide (GaP).It is formed in a manner of patterned etch in the second surface 14 of the second semiconductor layer 12 multiple recessed
Slot 141, the mode of etching include dry ecthing or wet etching, wherein multiple grooves 141 are to interconnect on second surface 14
's.It is connected in multiple grooves 141 and forms the second extension 51 in a manner of evaporating plating, the material of the second extension 51 includes
Golden (Au), germanium (Ge), beryllium (Be), nickel (Ni), palladium (Pd), zinc (Zn) or its alloy.
As shown in Figure 4 B, it provides a substrate 8 to bind with the second surface 14 of an adhesive layer 9 and semiconductor laminated 1, such as makes
Pass through the side for heating and pressurizeing after being aligned adhesive layer 9 with semiconductor laminated 1 second surface 14 with the technology of contraposition bonding
Formula bonds adhesive layer 9 and second surface 14.Then, growth substrate 81 is separated with semiconductor laminated 1 and exposes semiconductor and folded
The first surface 13 of layer 1.The method of growth substrate 81 is separated including the use of luminescence method, is irradiated using laser penetration growth substrate 81
Interface between growth substrate 81 and semiconductor laminated 1, to achieve the purpose that separating semiconductor lamination 1 and growth substrate 81.Separately
Outside, it also can use wet etching and directly remove growth substrate 81, or remove between growth substrate 81 and semiconductor laminated 1
Boundary layer (not shown), and then separate growth substrate 81 and semiconductor laminated 1.In addition to this it is possible to utilize steaming under high temperature
The boundary layer (not shown) directly removed between growth substrate 81 and semiconductor laminated 1 is carved in cavitation erosion, reaches growth substrate 81 and half
The isolated purpose of conductor lamination 1.
Then the second side 16 of semiconductor laminated 1 part is removed in a manner of wet etching or dry ecthing, forms a vacancy
161, the second extension 51 and patterned etch first surface 13 of exposed portion make to have on first surface 13 multiple prominent
Portion 131 interacts arrangement with multiple recess portions 132 out, each multiple protruding portion 131 is all comprising a platform 1313 and an at least bevel edge
1312, bevel edge 1312 has a tilt angle theta between 15 degree to 60 degree relative to the plane of recess portion 132.Then, each
Form at least 11 Ohmic contact of a contact structures 2 and the first semiconductor layer on a platform 1313, in the present embodiment, contact structures 2
Material include germanium (Ge), beryllium (Be), golden (Au), nickel (Ni), palladium (Pd), zinc (Zn) or its alloy.
It connects as shown in Figure 4 C, a transparency conducting layer 3 and the first extension is sequentially conformally covered on first surface 13
41, wherein the material of transparency conducting layer 3 includes tin indium oxide (ITO), indium oxide (InO), indium zinc oxide (IZO), tin oxide
(SnO), cadmium tin (CTO), antimony tin (ATO), zinc oxide aluminum (AZO), zinc-tin oxide (ZTO), zinc oxide (ZnO) or phosphorus
Change gallium (GaP), the material of the first extension 41 includes the higher metal material of reflectivity, such as silver (Ag), gold (Au), aluminium
(Al), metal materials or its alloy such as indium (In), tin (Sn), copper (Cu).Then coating one first is exhausted on the first extension 41
Edge layer 61, the first insulating layer 61 are formed on the first extension 41, are covered the first extension 41 and are extended over semiconductor and fold
The first extension of part 41 above semiconductor laminated 1 first side 15 is exposed in the second side 16 of layer 1, and first extends
Portion 41 is filled and led up because syntype is formed by convex-concave surface 411 in first surface 13 by the first insulating layer 61.
It connects as shown in Figure 4 D, forms a first connecting portion 42, one first weld part 43, a second connecting portion 52 and one the
Two weld parts 53, the first weld part 43 and the second weld part 53 are formed on the first insulating layer 61, the formation of first connecting portion 42
The first extension 41 is connected on semiconductor laminated 1 first side 15 and the first weld part 43, second connecting portion 52 are formed in
In vacancy 161, the second extension 51 of the second weld part 53 and exposing is connected.First connecting portion 42, the first weld part 43,
The material of two interconnecting pieces 52 and the second weld part 53 is, for example, titanium (Ti), tungsten (W), platinum (Pt), nickel (Ni), tin (Sn), golden (Au)
Or its alloy.
Fourth embodiment
Fig. 8 A is the schematic diagram according to the semiconductor light-emitting elements structure I V of fourth embodiment of the invention.Implement according to the present invention
Semiconductor light-emitting elements disclosed in example are a flip-over type light-emitting diode with reflecting mirror.Semiconductor light-emitting elements packet
Lamination containing semiconductor 1 has a first surface 13 and a second surface 14 relative to first surface 13.Semiconductor laminated 1 includes
One first semiconductor layer 11, one second semiconductor layer 12 and an active layers 10 are located at the first semiconductor layer 11 and the second semiconductor layer
Between 12, wherein first surface 13 is the surface of the first semiconductor layer 11, and second surface 14 is the surface of the second semiconductor layer 12.
First semiconductor layer 11 and the second semiconductor layer 12 have different conductivities, electrical property, polarity or according to doping element not
With to provide electronics or hole；Active layers 10 are formed between the first semiconductor layer 11 and the second semiconductor layer 12, active layers 10
Convert electric energy to luminous energy.By changing semiconductor laminated 1 wherein one or more layers physics and chemical composition, sending is adjusted
Optical wavelength.Forming semiconductor laminated 1 common material is AlGaInP (aluminum gallium indium
Phosphide, AlGaInP) series, aluminum indium gallium nitride (aluminum gallium indium nitride, AlGaInN) system
Column, zinc oxide are serial (zinc oxide, ZnO).Active layers 10 can for single heterojunction structure (single heterostructure,
SH), double-heterostructure (double heterostructure, DH), bilateral double heterojunction (double-side double
Heterostructure, DDH), multi layer quantum well (multi-quantum well, MWQ).Specifically, active layers 10 can be
Neutral, p-type or N-shaped electrical property semiconductor.When imposing electric current by semiconductor laminated 1, active layers 10 can shine.When active layers 10
Material when being AlGaInP (AlGaInP) serial, the light of red, orange, yellow light amber colour system can be issued；When for aluminium gallium nitride alloy
When indium (AlGaInN) series material, blue or green light can be issued.In the present embodiment, semiconductor laminated 1 material is AlGaInP
(aluminum gallium indium phosphide, AlGaInP) series.
On the first surface 13 of the first semiconductor layer 11, forms a transparency conducting layer 3 and cover first surface 13.It is transparent to lead
The material of electric layer 3 includes tin indium oxide (ITO), indium oxide (InO), indium zinc oxide (IZO), tin oxide (SnO), cadmium tin
(CTO), antimony tin (ATO), zinc oxide aluminum (AZO), zinc-tin oxide (ZTO), zinc oxide (ZnO) or gallium phosphide (GaP).
One first electrode 4 is formed on first surface 13, and first electrode 4 is welded comprising one first extension 41, one first
Portion 43 and a first connecting portion 42, the connection of first side 15 first that first connecting portion 42 is formed in semiconductor laminated 1 extend
Portion 41 and the first weld part 43, wherein the first extension 41 covering transparency conducting layer 3 and with 3 Ohmic contact of transparency conducting layer, the
One extension 41 is with high-reflectivity metal, and the light issued to reflect active layers 10 makes light from the second semiconductor layer 12
Second surface 14 project.One first insulating layer 61 is formed on the first extension 41, and the first extension 41 of covering part is simultaneously
Extend over semiconductor laminated 1 second side 16.First connecting portion 42 is formed on the first extension 41 not by first absolutely
The region that edge layer 61 covers, directly contacts, the first weld part 43 is located in first connecting portion 42 with the first extension 41.This implementation
In example, the area of the first weld part 43 is less than first connecting portion 42.The material of first weld part 43 and first connecting portion 42 and the
The material of one extension 41 is different, and the first weld part 43 and the material of first connecting portion 42 are, for example, titanium (Ti), tungsten (W), platinum
(Pt), nickel (Ni), tin (Sn), golden (Au) or its alloy；The material of first extension 41 includes the higher metal material of reflectivity,
Such as the lamination of the metal materials such as silver (Ag), gold (Au), aluminium (Al), nickel (Ni), tin (Sn), copper (Cu), titanium (Ti) or platinum (Pt)
Or its alloy；The material of first insulating layer 61 is including but not limited to organic material, such as Su8, benzocyclobutene (BCB), excessively fluorine
Cyclobutane (PFCB), epoxy resin (Epoxy), acrylic resin (Acrylic Resin), cyclic olefin polymer (COC), poly- first
Base methyl acrylate (PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide
(Polyetherimide), fluorocarbon polymer (Fluorocarbon Polymer)；Inorganic material, such as silica gel
(Silicone), glass (Glass) or dielectric material, such as aluminium oxide (Al2O3), silicon nitride (SiNx), silica (SiO2)、
Titanium oxide (TiO2) or magnesium fluoride (MgF2)。
Multiple contact structures 54 positioned at semiconductor laminated 1 second surface 14 on 12 Ohmic contact of the second semiconductor layer,
One adhesive layer 9 is located at second surface 14 and covers all contact structures 54, and adhesive layer 9 includes one first adhesive layer 91 and one second
Adhesive layer 92, the first adhesive layer 91 is directly contacted with contact structures 54 and second surface 14, and protrudes from semiconductor laminated 1
First side 15 or second side 16, the second adhesive layer 92 are set on the first adhesive layer 91 mutually viscous with the first adhesive layer 91
Knot.The material of multiple contact structures 54 includes golden (Au), germanium (Ge), beryllium (Be), nickel (Ni), palladium (Pd), zinc (Zn) or its alloy.
First adhesive layer 91 is made of the good material of transparent and electrically conductive, including but not limited to tin indium oxide (ITO), indium oxide
(InO), indium zinc oxide (IZO), tin oxide (SnO), cadmium tin (CTO), antimony tin (ATO), zinc oxide aluminum (AZO), oxygen
Change zinc-tin (ZTO), zinc oxide (ZnO) or gallium phosphide (GaP).Second adhesive layer 92 includes sticky good and active layers 10 is sent out
Light out is transparent material, includes organic material, such as Su8, benzocyclobutene (BCB), excessively fluorine cyclobutane (PFCB), epoxy
Resin (Epoxy), acrylic resin (Acrylic Resin), cyclic olefin polymer (COC), polymethyl methacrylate
(PMMA), polyethylene terephthalate (PET), polycarbonate (PC), polyetherimide (Polyetherimide), fluorine carbon poly
It closes object (Fluorocarbon Polymer)；Inorganic material, such as silica gel (Silicone).
One second electrode 5 includes a second connecting portion 52 and one second weld part 53, and second connecting portion 52 is covered on the
It extends over from the first surface 13 of part to second side 16 on one insulating layer 61, is directly contacted with the first adhesive layer 91,
Wherein second connecting portion 52 is avoided and the first extension 41, transparency conducting layer 3 and semiconductor laminated 1 by the first insulating layer 61
Directly contact；Second weld part 53 setting is directly contacted on first surface 13 with second connecting portion 52, second connecting portion 52 and
The material of second weld part 53 includes titanium (Ti), tungsten (W), platinum (Pt), nickel (Ni), tin (Sn), golden (Au) or its alloy.First weldering
Socket part 43 is used to make active layers 10 shine foreign current importing with the second weld part 53, when the first semiconductor layer 11 is p-type half
Conductor and the second semiconductor layer 12 are n-type semiconductor, and electric current is injected from the first weld part 43, by first connecting portion 42, the
After one extension 41 and the conduction of transparency conducting layer 3, distribution, evenly into semiconductor laminated 1, then via contact structures 54
And first adhesive layer 91 conduct electrical currents to second connecting portion 52 and the second weld part 53, from the second weld part 53 flow out.
In the preferred embodiment, the surface 531 of the second weld part 53 and the surface 431 of the first weld part 43 are located at same
On a horizontal plane.Have a gap 7 to by the second weld part 53 and first between second weld part 53 and the first weld part 43
Weld part 43 separates, and the width in gap 7 is between 70 μm~250 μm.When the shape of semiconductor light-emitting elements is a side length
12mil it is rectangular when, the area summation of the first weld part 43 and the second weld part 53 is about the face of semiconductor light-emitting elements
Between product 15%~80%；When semiconductor light-emitting elements shape be a side length 28mil it is rectangular when, the first weld part 43
Area summation with the second weld part 53 is about between the area 60%~92% of semiconductor light-emitting elements；Work as semiconductor light emitting element
The shape of part be a side length 40mil it is rectangular when, the area summation of the first weld part 43 and the second weld part 53 is about partly
Between the area 75%~95% of conductor light-emitting component.
Substrate 8 is formed on second surface 14 by being bonded with adhesive layer 9, and the light that active layers 10 are issued can all penetrate viscous
Tie layer 9 and substrate 8.The material of substrate 8 includes that the light issued for active layers 10 is transparent material, such as GaAs
(GaAs), gallium phosphide (GaP), gallium nitride (GaN), sapphire (Sapphire), diamond (Diamond), glass (Glass), stone
English (Quartz), acryl (Acryl), zinc oxide (ZnO) or aluminium nitride (AlN) etc..In the present embodiment, the first adhesive layer 91
For indium zinc oxide (IZO) (refractive index is about 2.1), the second adhesive layer 92 is benzocyclobutene (BCB) (refractive index is about 1.5),
Substrate 8 is glass (Glass) (refractive index is less than 1.5), when the light that active layers 10 are issued sequentially passes through the first adhesive layer 91, the
When two adhesive layers 92 and substrate 8, since refractive index sequentially declines, the situation that can reduce total reflection is generated.
Fig. 8 B is the top view according to the semiconductor light-emitting elements structure III of first embodiment of the invention.Semiconductor laminated 1
Range is less than substrate 8, and multiple contact structures 54 at array-like are arranged on semiconductor laminated 1 second surface 14, Duo Gejie
Touching structure 54 is independent each other not to be contacted.
Fig. 7 is the structural schematic diagram according to another embodiment of the present invention.One bulb lamp 600 includes a lampshade 602, a lens
604, a light emitting module 610, a lamp holder 612, a cooling fin 614, an interconnecting piece 616 and an electrical connecting element.Light emitting module
610 comprising the semiconductor light-emitting elements 608 in a supporting part 606 and multiple previous embodiments on supporting part 606.
Each embodiment cited by the present invention is only to illustrate the present invention, is not used to limit the scope of the present invention.It is any
People's any modification obviously known made for the present invention or change all do not depart from spirit and scope of the invention.
Claims (10)
1. a kind of semiconductor light-emitting elements, include:
Substrate has first refractive index；
It is semiconductor laminated, it is located on the substrate, and there is upper surface and the first width；
First electrode is located on the upper surface；
Second electrode has first part, is located on the upper surface；And
Adhesive layer, be located at the substrate and this it is semiconductor laminated between and have the second refractive index and the second width；Wherein this second
Refractive index is greater than the first refractive index, and second width is greater than first width.
2. semiconductor light-emitting elements as described in claim 1, wherein this is semiconductor laminated with side surface, and second electrode is also
Comprising second part, the side surface is covered.
3. semiconductor light-emitting elements as described in claim 1, wherein a part of the adhesive layer is not semiconductor laminated by this
Covering.
4. semiconductor light-emitting elements as described in claim 1, wherein the adhesive layer includes indium zinc oxide.
5. semiconductor light-emitting elements as described in claim 1, wherein the first electrode includes the first extension, and this first prolongs
Extending portion includes metal.
6. semiconductor light-emitting elements as claimed in claim 5 also include insulating layer, it is located on first extension or covering should
Side surface.
7. semiconductor light-emitting elements as claimed in claim 5, wherein the first electrode also includes the first weld part and first
Interconnecting piece, the first connecting portion connect first extension and first weld part.
8. semiconductor light-emitting elements as claimed in claim 6, wherein the second electrode includes the second extension, the second weld part
And second connecting portion, second extension and second weld part are connected, and the insulating layer directly contacts first extension
And the second connecting portion.
9. semiconductor light-emitting elements as described in claim 1 also include multiple contact structures, are located at the substrate and the semiconductor
Between lamination.
10. a kind of light emitting module includes semiconductor light-emitting elements as described in claim 1.
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| CN201811228259.6A CN109659412A (en) | 2013-11-22 | 2013-11-22 | Semiconductor light-emitting elements |
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| CN201811228259.6A CN109659412A (en) | 2013-11-22 | 2013-11-22 | Semiconductor light-emitting elements |
| CN201310595821.XA CN104659176B (en) | 2013-11-22 | 2013-11-22 | Semiconductor light emitting element |
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| CN106711316B (en) * | 2015-11-18 | 2020-09-04 | 晶元光电股份有限公司 | Light emitting element |
| CN109427935A (en) * | 2017-08-31 | 2019-03-05 | 山东浪潮华光光电子股份有限公司 | A light-emitting diode with a virtual N electrode and a manufacturing method thereof |
| CN111446338B (en) | 2019-01-17 | 2022-04-29 | 隆达电子股份有限公司 | Light emitting diode |
| TWI845642B (en) * | 2020-03-17 | 2024-06-21 | 晶元光電股份有限公司 | Semiconductor light-emitting device |
| CN115348718A (en) * | 2021-05-14 | 2022-11-15 | 富致科技股份有限公司 | PTC circuit protection device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2005347714A (en) * | 2004-06-07 | 2005-12-15 | Shin Etsu Handotai Co Ltd | Light emitting device and its manufacturing method |
| CN102738344A (en) * | 2011-04-15 | 2012-10-17 | 晶元光电股份有限公司 | light emitting device |
| CN102903811A (en) * | 2011-07-25 | 2013-01-30 | 广镓光电股份有限公司 | Light emitting device structure |
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| JP4670489B2 (en) * | 2005-06-06 | 2011-04-13 | 日立電線株式会社 | Light emitting diode and manufacturing method thereof |
| JP5849215B2 (en) * | 2010-06-21 | 2016-01-27 | パナソニックＩｐマネジメント株式会社 | Ultraviolet semiconductor light emitting device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2005347714A (en) * | 2004-06-07 | 2005-12-15 | Shin Etsu Handotai Co Ltd | Light emitting device and its manufacturing method |
| CN102738344A (en) * | 2011-04-15 | 2012-10-17 | 晶元光电股份有限公司 | light emitting device |
| CN102903811A (en) * | 2011-07-25 | 2013-01-30 | 广镓光电股份有限公司 | Light emitting device structure |
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Application publication date: 20190419 |