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CN109652059A - Quantum dot film and preparation method of alumina-coated quantum dot - Google Patents

Quantum dot film and preparation method of alumina-coated quantum dot Download PDF

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Publication number
CN109652059A
CN109652059A CN201910027523.8A CN201910027523A CN109652059A CN 109652059 A CN109652059 A CN 109652059A CN 201910027523 A CN201910027523 A CN 201910027523A CN 109652059 A CN109652059 A CN 109652059A
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China
Prior art keywords
quantum dot
preparation
alumina
coated
reaction
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Inventor
孙小卫
王恺
杨鸿成
徐冰
刘乙樽
蔡睿
汪召锦
方凡
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Shenzhen Planck Innovation Technology Co ltd
Southern University of Science and Technology
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Shenzhen Planck Innovation Technology Co ltd
Southern University of Science and Technology
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Priority to CN201910027523.8A priority Critical patent/CN109652059A/en
Publication of CN109652059A publication Critical patent/CN109652059A/en
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02Use of particular materials as binders, particle coatings or suspension media therefor
    • C09K11/025Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/22Luminous paints
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/30Sulfur-, selenium- or tellurium-containing compounds
    • C08K2003/3009Sulfides
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/30Sulfur-, selenium- or tellurium-containing compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K9/00Use of pretreated ingredients
    • C08K9/10Encapsulated ingredients

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Luminescent Compositions (AREA)

Abstract

本发明提供一种量子点薄膜及一种氧化铝包覆量子点的制备方法,所述氧化铝包覆的量子点的制备方法为:将量子点分散液与有机溶剂混合,并逐滴加入三乙基铝溶液,反应结束后得到所述氧化铝包覆的量子点。所述量子点薄膜由上述制备方法制备的氧化铝包覆的量子点为原料制备。所述材料中的氧化铝包覆层可以有效缓解胶水中的催化剂对量子点的侵蚀,使制备的量子点薄膜在使用过程中量子点的发光效率不发生衰减。

The invention provides a quantum dot film and a preparation method of alumina-coated quantum dots. The preparation method of the alumina-coated quantum dots is as follows: mixing quantum dot dispersion liquid with an organic solvent, and adding three Ethyl aluminum solution, and the alumina-coated quantum dots are obtained after the reaction is completed. The quantum dot film is prepared from the alumina-coated quantum dots prepared by the above preparation method as a raw material. The alumina coating layer in the material can effectively alleviate the erosion of the quantum dots by the catalyst in the glue, so that the luminous efficiency of the quantum dots does not decay during the use of the prepared quantum dot film.

Description

A kind of quantum dot film and a kind of preparation method of alumina-coated quantum dot
Technical field
The invention belongs to technology of quantum dots fields, are related to a kind of preparation method of alumina-coated quantum dot, more particularly to A kind of film preparation by alumina-coated quantum dot.
Background technique
In recent years, there are many researchs about quantum dot, in the Wavelength tunable of the transmitting light of visible light wave range, half-peak breadth Narrow, luminous efficiency is high, and display colour gamut is wide, and has powerful application latent in the application fields such as white light LEDs, QLED and display Power.
It after the preparation of quantum dot film needs to mix QDs and glue, then is coated, or utilizes other industry films Equipment produces quantum dot film.The homogeneity of its film will affect its luminous efficiency, meanwhile, in display field to the luminous equal of film Evenness is very high.But quantum dot surface has the long-chain Ligands such as oleic acid, oleyl amine, after directly mixing with glue, will lead to glue Water cure effect is poor or the decline of the viscosity of glue.In addition, the catalyst in glue also has corrosion function, meeting to quantum dot Its QY is caused to decline, luminous efficiency reduces.The quantum dot film of conventional method preparation only directly mixes quantum dot with glue, Not can avoid QDs reunite in glue or glue in erosion of the catalyst to QDs, the quantum dot film of this method preparation Non-uniform light, will affect it in the application of display field.
108441207 A of CN discloses a kind of quantum dot compound and preparation method thereof, and the quantum dot compound includes Quantum dot and the covering material for coating the quantum dot, the covering material is by three kinds of metallic element, protium, oxygen element ingredients It forms and not soluble in water.The preparation method is that: metal alkoxide step 1): is added to the organic solvent containing quantum dot In, form the first system;Step 2): water is introduced in Xiang Suoshu the first system;Step 3): after the step 2), described It reacts in one system and generates quantum dot compound.The preparation method but introduces in the reaction using metal alkoxide as raw material For water as reactant, reactivity hazard is high, should not carry out industrialized production.
Summary of the invention
For the technical problems in the prior art, the present invention provides a kind of quantum dot film and a kind of alumina-coated The catalysis in glue can be effectively relieved in the preparation method of quantum dot, the alumina-coated layer of the quantum dot of the alumina-coated Corrosion function of the agent to quantum dot, so that the quantum dot being prepared
The luminous efficiency of film quantum dot in use does not decay.
In order to achieve the above object, the invention adopts the following technical scheme:
It is an object of the present invention to provide a kind of preparation methods of alumina-coated quantum dot, the preparation method is that:
Quantum dot dispersion liquid is mixed with solvent, and triethyl aluminium solution is added dropwise, obtains the oxygen after reaction Change the quantum dot of aluminium cladding.
As currently preferred technical solution, the quantum dot includes CdSe quantum dot, PbSe quantum dot, PbS quantum In point, InP quantum dot or perovskite quantum dot any one or at least two combination, the combination is typical but non-limiting Example has: the combination of CdSe quantum dot and PbSe quantum dot, the combination of PbSe quantum dot and PbS quantum, PbS quantum and The combination of InP quantum dot, the combination of InP quantum dot and perovskite quantum dot, the combination of perovskite quantum dot and CdSe quantum dot Or CdSe quantum dot, PbSe quantum dot and combination of PbS quantum etc..
As currently preferred technical solution, the quantum dot dispersion liquid concentration be 30~80mg/mL, as 30mg/mL, 35mg/mL, 40mg/mL, 45mg/mL, 50mg/mL, 55mg/mL, 60mg/mL, 65mg/mL, 70mg/mL, 75mg/mL or 80mg/mL etc., it is not limited to cited numerical value, other interior unlisted numerical value of the numberical range are equally applicable.
As currently preferred technical solution, the solvent is organic solvent;
Preferably, the organic solvent includes any one in hexamethylene, n-hexane, toluene or chloroform or at least two Combination, such as combination, the combination of n-hexane and toluene or the combination of toluene and chloroform of hexamethylene and n-hexane.
In the present invention, selecting aluminium oxide is clad compared to other unformed metal oxides of cladding or nonmetallic oxidation The advantages of object is that have higher consistency, and the catalyst in glue is hindered directly to contact quantum dot.
Preferably, the volume ratio of the solvent and quantum dot dispersion liquid is 1000:(1~10), as 1000:1,1000:2, 1000:3,1000:4,1000:5,1000:6,1000:7,1000:8,1000:9 or 1000:10 etc., it is not limited to listed The numerical value of act, other interior unlisted numerical value of the numberical range are equally applicable.
As currently preferred technical solution, the organo-aluminium includes triethyl aluminum, aluminium secondary butylate, aluminium isopropoxide or first In base aluminium any one or at least two combination, such as the combination of triethyl aluminum and aluminium secondary butylate, aluminium secondary butylate and isopropanol The combination of aluminium, the combination of aluminium isopropoxide and aluminium methyl, the combination of aluminium methyl and triethyl aluminum or triethyl aluminum, aluminium secondary butylate and different The combination etc. of aluminium propoxide.
Preferably, the concentration for having triethyl aluminium solution be 0.5~1.2M, as 0.5M, 0.6M, 0.7M, 0.8M, 0.9M, 1.0M, 1.1M or 1.2M etc., it is not limited to cited numerical value, other interior unlisted numerical value of the numberical range It is equally applicable.
Preferably, the triethyl aluminium solution and the volume ratio of quantum dot dispersion liquid are 1:(3~10), such as 1:3,1:4,1: 5,1:6,1:7,1:8,1:9 or 1:10 etc., it is not limited to cited numerical value, other interior unlisted numbers of the numberical range It is worth equally applicable.
As currently preferred technical solution, the reaction carries out under stiring, and the rate of the stirring is 100~ 500rpm, such as 100rpm, 150rpm, 200rpm, 250rpm, 300rpm, 350rpm, 400rpm, 450rpm or 500rpm, but It is not limited in cited numerical value, other unlisted numerical value are equally applicable in the numberical range.
Preferably, the time of the reaction is 2~8h, such as 2h, 3h, 4h, 5h, 6h, 7h, 8h, it is not limited to institute The numerical value enumerated, other interior unlisted numerical value of the numberical range are equally applicable.
Preferably, it is described be added dropwise organic aluminum solutions and it is described reaction carried out in glove box.
It preferably, is protective gas state in the glove box.
Preferably, the protective gas include in nitrogen, helium or argon gas any one or at least two combination.
As currently preferred technical solution, after being carried out after the reaction to the quantum dot of obtained alumina-coated Reason.
Preferably, the method for the post-processing is washing and drying.
Preferably, washing 1~5 is carried out to the quantum dot of obtained alumina-coated using the solvent that reaction uses Secondary, such as 1 time, 2 times, 3 times, 4 times or 5 inferior, it is not limited to cited numerical value, other are unlisted in the numberical range Numerical value is equally applicable.
Preferably, the temperature of the drying is 50~80 DEG C, such as 50 DEG C, 55 DEG C, 60 DEG C, 65 DEG C, 70 DEG C, 75 DEG C or 80 DEG C Deng it is not limited to cited numerical value, other unlisted numerical value are equally applicable in the numberical range.
As currently preferred technical solution, the quantum dot of the alumina-coated the preparation method comprises the following steps:
The quantum dot dispersion liquid that concentration is 30~80mg/mL is mixed with organic solvent, the solvent and quantum dot disperse The volume ratio of liquid is 1000:(1~10), triethyl aluminium solution is added dropwise in protective gas state glove box, it is described organic The volume ratio of aluminum solutions and quantum dot dispersion liquid is 1:(3~10), 2~8h, reaction knot are reacted under the stirring of 100~500rpm Shu Hou takes out sample from glove box, using the solvent that uses of reaction to obtaining the quantum dot of the alumina-coated Washing 1~5 time, is dried at 50~80 DEG C.
The second purpose of the present invention is to provide a kind of quantum dot of alumina-coated, the quantum dot is made by any of the above-described kind Preparation Method is prepared.
The three of the object of the invention are to provide a kind of quantum dot film, and the quantum dot film is by above-mentioned alumina-coated Quantum dot is prepared.
In the present invention, the quantum dot film the preparation method comprises the following steps:
The quantum dot of the above-mentioned alumina-coated being prepared is mixed with glue, is coated to the first protection after vacuum defoaming On film, the second protective film then is covered on the quantum dot glue-line that coating obtains, the quantum dot film is obtained after solidification.
Wherein, the mass volume ratio of the quantum dot and glue of the alumina-coated is (3~8): 1, such as 3:1,4:1,5: 1,6:1,7:1 or 8:1 etc., it is not limited to cited numerical value, other interior unlisted numerical value of the numberical range are equally suitable With.
Wherein, the glue can be A/B glue, UV glue or silica gel etc., corresponding curing mode can be curing agent solidification, Ultra-violet curing is heating and curing.
Compared with prior art, the present invention is at least had the advantages that
(1) present invention provides a kind of preparation method of alumina-coated quantum dot, the amount that the preparation method is prepared It is sub-, can erosion to avoid catalyst during preparing quantum dot film in glue to quantum dot, improve quantum The stability of point, the QY of quantum dot film can keep with QY similar in pure quantum dot, or even it is higher than the QY of pure quantum dot;
(2) present invention provides a kind of quantum dot film, and the quantum dot film has good flatness.
Detailed description of the invention
Fig. 1 is the CdSe/CdS/CdZnS quantum dot before the embodiment of the present invention 1 coats;
Fig. 2 is the TEM figure of the quantum dot for the alumina-coated that the embodiment of the present invention 1 is prepared;
Fig. 3 is the high-resolution TEM figure of the quantum dot for the alumina-coated that the embodiment of the present invention 1 is prepared;
Fig. 4 is the energy spectrum diagram of the quantum dot for the alumina-coated that the embodiment of the present invention 1 is prepared;
Fig. 5 is the quantum dot and the mixed pictorial diagram of glue for the alumina-coated that the embodiment of the present invention 1 is prepared;
Fig. 6 is the quantum dot film of the quantum dot preparation for the alumina-coated being prepared using the embodiment of the present invention 1 Pictorial diagram;
Fig. 7 is alumina-coated quantum dot provided by the invention and the flow diagram for being prepared into quantum dot film.
The present invention is described in more detail below.But following examples is only simple example of the invention, not generation Table or limitation the scope of the present invention, protection scope of the present invention are subject to claims.
Specific embodiment
To further illustrate the technical scheme of the present invention below with reference to the accompanying drawings and specific embodiments.
In order to better illustrate the present invention, it is easy to understand technical solution of the present invention, of the invention is typical but non-limiting Embodiment is as follows:
Embodiment 1
The present embodiment provides a kind of preparation methods of alumina-coated quantum dot, the preparation method is that:
By concentration be 50mg/mL feux rouges CdSe/CdS/CdZnS quantum dot dispersion liquid mixed with hexamethylene, hexamethylene and The volume ratio of quantum dot dispersion liquid is 1000:6, is added dropwise in nitrogen state glove box triethyl aluminium solution (1M), described Triethyl aluminium solution and the volume ratio of quantum dot dispersion liquid are 1:3, and 2h is reacted under the stirring of 300rpm, after reaction, will Sample takes out from glove box, is washed 3 times using reaction using quantum dot of the hexamethylene to the obtained alumina-coated, then It is dried at 60 DEG C, obtains the feux rouges CdSe/CdS/CdZnS quantum dot of pure alumina-coated.
The TEM of the feux rouges CdSe/CdS/CdZnS quantum dot for the alumina-coated that the present embodiment is prepared schemes such as Fig. 2 institute Show, it can be seen that aluminium oxide can effective coated quantum dots, meanwhile, without obviously free quantum dot in figure, illustrate the packet of aluminium oxide It is good to cover effect.Fig. 3 is the high-resolution of the feux rouges CdSe/CdS/CdZnS quantum dot for the alumina-coated that the present embodiment is prepared TEM figure, shows that quantum dot is embedded in the aluminium oxide of undefined structure.Fig. 4 is the alumina-coated that the present embodiment is prepared Feux rouges CdSe/CdS/CdZnS quantum dot energy spectrum diagram, wherein Se, Cd, Zn, S element derive from quantum dot, and O and Al element From aluminium oxide.
Embodiment 2
The present embodiment provides a kind of preparation methods of the quantum dot of alumina-coated, the preparation method is that:
The green light alloy CdZnSeS quantum dot dispersion liquid that concentration is 30mg/mL is mixed with n-hexane, n-hexane and quantum The volume ratio of point dispersion liquid is 1000:1, is added dropwise in nitrogen state glove box triethyl aluminium solution (0.5M), described three The volume ratio of ethyl aluminum solutions and quantum dot dispersion liquid is 1:5,3h is reacted under the stirring of 100rpm, after reaction, by sample Product take out from glove box, are washed 5 times using reaction using quantum dot of the n-hexane to the obtained alumina-coated, then at It is dried at 80 DEG C, obtains the green light alloy CdZnSeS quantum dot of pure alumina-coated.
Embodiment 3
The present embodiment provides a kind of preparation methods of the quantum dot of alumina-coated, the preparation method is that:
The green light alloy CdZnSeS quantum dot dispersion liquid that concentration is 80mg/mL is mixed with chloroform, chloroform and quantum dot point The volume ratio of dispersion liquid is 1000:10, and triethyl aluminium solution (2M), the triethyl aluminum are added dropwise in nitrogen state glove box The volume ratio of solution and quantum dot dispersion liquid is 1:8, and 6h is reacted under the stirring of 500rpm, after reaction, by sample from hand It is taken out in casing, is washed 1 time using reaction using quantum dot of the chloroform to the obtained alumina-coated, dried at 50 DEG C It is dry, obtain the green light alloy CdZnSeS quantum dot of pure alumina-coated.
Embodiment 4
The present embodiment provides a kind of preparation methods of the quantum dot of alumina-coated, the preparation method is that:
The green light CdZnSe/CdZnS quantum dot dispersion liquid that concentration is 60mg/mL is mixed with toluene, toluene and quantum dot The volume ratio of dispersion liquid is 1000:5, is added dropwise in nitrogen state glove box triethyl aluminium solution (0.8M), three second The volume ratio of base aluminum solutions and quantum dot dispersion liquid is 1:10,4h is reacted under the stirring of 300rpm, after reaction, by sample It takes out, is washed 5 times using reaction using quantum dot of the toluene to the obtained alumina-coated, then at 80 DEG C from glove box Lower drying obtains the green light CdZnSe/CdZnS quantum dot quantum point of pure alumina-coated.
The quantum dot of the embodiment 1-4 alumina-coated being prepared is mixed with UV glue, the amount of the alumina-coated The mass volume ratio of son point and glue is 5:1, is coated on first layer protective film after vacuum defoaming, the amount then obtained in coating Second layer protective film is covered on son point glue layer, obtains interlayer type quantum dot film after UV solidification.The protective film is PE film, It can be PET film, PC film or OPP film etc..
Comparative example 1
This comparative example provides a kind of quantum dot film, and the quantum dot that the quantum dot film uses is using silester as raw material By reverse microemulsion process coated silica, specially 640 μ L feux rouges CdSe/CdS/CdZnS quantum dots are dispersed in 160mL ring In hexane, 20mL Igepal Co-520 and 3mL ammonium hydroxide is added, reacts 30h, methanol demulsification is eventually adding, washs, drying. The preparation method of quantum dot film is also same as Example 1.
Comparative example 2
This comparative example provides a kind of quantum dot film, and the quantum dot that the quantum dot film uses is using silester as raw material By reverse microemulsion process coated silica, specially 640 μ L green light CdZnSeS quantum dots are dispersed in 160mL hexamethylene, 20mL Igepal Co-520 and 3mL ammonium hydroxide is added, 30h is reacted, methanol demulsification is eventually adding, washs, drying.Quantum dot is thin The preparation method of film is also same as Example 1.
Comparative example 3
This comparative example provides a kind of preparation method of the quantum dot of alumina-coated, the preparation method is that:
The CdSe/CdS nanometer sheet dispersion liquid that concentration is 50mg/mL is mixed with hexamethylene, hexamethylene and quantum dot disperse The volume ratio of liquid is 1000:3, and 200 μ L aluminium secondary butylate solution (0.6M) are added dropwise, and reacts 2h under the stirring of 300rpm, After reaction, it is washed 3 times using reaction using quantum dot of the hexamethylene to the obtained alumina-coated, at 60 DEG C Drying, obtains the CdSe nanometer sheet quantum dot of pure alumina-coated.
Embodiment 1-4 and comparative example the 1-3 quantum dot being prepared and embodiment 1-4 and comparative example 1-3 are provided The performance of quantum dot film that is prepared of quantum dot tested, it is as a result as shown in Table 1 and Table 2 respectively.
Table 1
QY/% before coating QY/% after cladding
Embodiment 1 64 53
Embodiment 2 23 41
Embodiment 3 23 16
Embodiment 4 45 52
Comparative example 1 64 38
Comparative example 2 23 1
Comparative example 3 78 0
Table 2
QY/%
Embodiment 1 63
Embodiment 2 45
Embodiment 3 20
Embodiment 4 38
Comparative example 1 28
Comparative example 2 0
Comparative example 3 0
From its QY after the quantum dot coated aluminum oxide that the test result of Tables 1 and 2 can be seen that embodiment 1 and embodiment 4 Declined, but only have dropped 11% and 7% respectively, the performance of quantum dot is influenced little.Embodiment 2 and embodiment 4 use Quantum dot itself there are certain defects, the defect on quantum dot can be repaired after coated aluminum oxide, its QY is caused to have instead Risen.Comparative example 1 and comparative example 2 are coated using silica substitution aluminium oxide, and the quantum dot of comparative example 1 coats dioxy QY has dropped 26% after SiClx, and QY has dropped 22% after the quantum dot coated silica of comparative example 2, and the amplitude of decline wants high In embodiment 1 and embodiment 4.The use alumina-coated CdSe/CdS nanometer sheet of comparative example 3, the thickness of nanometer sheet about 2nm, itself Unstable, QY becomes 0 after coated aluminum oxide.
The Applicant declares that the present invention is explained by the above embodiments detailed construction feature of the invention, but the present invention is simultaneously It is not limited to above-mentioned detailed construction feature, that is, does not mean that the present invention must rely on above-mentioned detailed construction feature and could implement.Institute Belong to those skilled in the art it will be clearly understood that any improvement in the present invention, to the equivalence replacement of component selected by the present invention And increase, selection of concrete mode of accessory etc., all of which fall within the scope of protection and disclosure of the present invention.
The preferred embodiment of the present invention has been described above in detail, still, during present invention is not limited to the embodiments described above Detail within the scope of the technical concept of the present invention can be with various simple variants of the technical solution of the present invention are made, this A little simple variants all belong to the scope of protection of the present invention.
It is further to note that specific technical features described in the above specific embodiments, in not lance In the case where shield, can be combined in any appropriate way, in order to avoid unnecessary repetition, the present invention to it is various can No further explanation will be given for the combination of energy.
In addition, various embodiments of the present invention can be combined randomly, as long as it is without prejudice to originally The thought of invention, it should also be regarded as the disclosure of the present invention.

Claims (10)

1.一种氧化铝包覆量子点的制备方法,所述制备方法为:1. a preparation method of alumina-coated quantum dots, the preparation method is: 将量子点分散液与溶剂混合,并逐滴加入有机铝溶液,反应结束后得到所述氧化铝包覆的量子点。The quantum dot dispersion is mixed with the solvent, and the organoaluminum solution is added dropwise, and the alumina-coated quantum dots are obtained after the reaction is completed. 2.根据权利要求1所述的制备方法,其特征在于,所述量子点包括CdSe量子点、PbSe量子点、PbS量子点、InP量子点或钙钛矿量子点中的任意一种或至少两种的组合。2. preparation method according to claim 1, is characterized in that, described quantum dot comprises any one or at least two in CdSe quantum dot, PbSe quantum dot, PbS quantum dot, InP quantum dot or perovskite quantum dot. combination of species. 3.根据权利要求1或2所述的制备方法,其特征在于,所述量子点分散液浓度为30~80mg/mL。3. The preparation method according to claim 1 or 2, wherein the concentration of the quantum dot dispersion liquid is 30-80 mg/mL. 4.根据权利要求1-3任一项所述的制备方法,其特征在于,所述溶剂为有机溶剂;4. The preparation method according to any one of claims 1-3, wherein the solvent is an organic solvent; 优选地,所述有机溶剂包括环己烷、正己烷、甲苯或氯仿中的任意一种或至少两种的组合;Preferably, the organic solvent comprises any one or a combination of at least two of cyclohexane, n-hexane, toluene or chloroform; 优选地,所述溶剂与量子点分散液的体积比为1000:(1~10)。Preferably, the volume ratio of the solvent to the quantum dot dispersion liquid is 1000:(1-10). 5.根据权利要求1-4任一项所述的制备方法,其特征在于,所述有机铝包括三乙基铝、仲丁醇铝、异丙醇铝或甲基铝中的任意一种或至少两种的组合;5. The preparation method according to any one of claims 1-4, wherein the organoaluminum comprises any one of triethylaluminum, aluminum sec-butoxide, aluminum isopropoxide or methyl aluminum or a combination of at least two; 优选地,所述有机铝溶液的浓度为0.5~1.2M。Preferably, the concentration of the organoaluminum solution is 0.5-1.2M. 优选地,所述有机铝溶液与量子点分散液的体积比为1:(3~10)。Preferably, the volume ratio of the organoaluminum solution to the quantum dot dispersion is 1:(3-10). 6.根据权利要求1-5任一项所述的制备方法,其特征在于,所述反应在搅拌下进行,所述搅拌的速率为100~500rpm;6. The preparation method according to any one of claims 1-5, wherein the reaction is carried out under stirring, and the stirring rate is 100-500 rpm; 优选地,所述反应的时间为2~8h;Preferably, the reaction time is 2~8h; 优选地,所述逐滴加入有机铝溶液以及所述反应在手套箱中进行;Preferably, the dropwise addition of the organoaluminum solution and the reaction are carried out in a glove box; 优选地,所述手套箱中为保护气体状态;Preferably, the glove box is in a protective gas state; 优选地,所述保护气体包括氮气、氦气或氩气中的任意一种或至少两种的组合。Preferably, the protective gas includes any one or a combination of at least two of nitrogen, helium or argon. 7.根据权利要求1-6任一项所述的制备方法,其特征在于,所述反应后对得到的氧化铝包覆的量子点进行后处理;7. The preparation method according to any one of claims 1-6, wherein the obtained alumina-coated quantum dots are post-treated after the reaction; 优选地,所述后处理的方法为洗涤和烘干;Preferably, the post-processing method is washing and drying; 优选地,使用反应使用的所述溶剂对得到的氧化铝包覆的量子点进行洗涤1~5次;Preferably, the obtained alumina-coated quantum dots are washed 1-5 times with the solvent used in the reaction; 优选地,所述烘干的温度为50~80℃。Preferably, the drying temperature is 50-80°C. 8.根据权利要求1-7任一项所述的制备方法,其特征在于,所述制备方法为:8. The preparation method according to any one of claims 1-7, wherein the preparation method is: 将浓度为30~80mg/mL的量子点分散液与有机溶剂混合,所述溶剂与量子点分散液的体积比为1000:(1~10),在保护气体状态手套箱中逐滴加入有机铝溶液,所述有机铝溶液与量子点分散液的体积比为1:(3~10),在100~500rpm的搅拌下反应1~3h,反应结束后,将样品从手套箱中取出来,使用反应使用的所述溶剂对得到所述氧化铝包覆的量子点洗涤1~5次,再于50~80℃下烘干。Mix the quantum dot dispersion with a concentration of 30 to 80 mg/mL with an organic solvent, and the volume ratio of the solvent to the quantum dot dispersion is 1000: (1 to 10), and add organic aluminum dropwise to the glove box in a protective gas state. solution, the volume ratio of the organoaluminum solution to the quantum dot dispersion is 1:(3~10), and the reaction is carried out under stirring at 100~500rpm for 1~3h. After the reaction, the sample is taken out from the glove box and used The solvent used in the reaction is used to wash the quantum dots coated with alumina for 1 to 5 times, and then dry at 50 to 80°C. 9.一种氧化铝包覆的量子点,其特征在于,所述量子点由权利要求1-8任一项所述的制备方法制备得到。9 . An alumina-coated quantum dot, wherein the quantum dot is prepared by the preparation method of any one of claims 1-8. 10 . 10.一种量子点薄膜,其特征在于,所述量子点薄膜由权利要求9所述氧化铝包覆的量子点制备得到。10 . A quantum dot film, characterized in that, the quantum dot film is prepared from the alumina-coated quantum dots of claim 9 .
CN201910027523.8A 2019-01-11 2019-01-11 Quantum dot film and preparation method of alumina-coated quantum dot Pending CN109652059A (en)

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Application publication date: 20190419