CN109599445A - A kind of backlight semiconductor optoelectronic class chip and its interconnecting method - Google Patents
A kind of backlight semiconductor optoelectronic class chip and its interconnecting method Download PDFInfo
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- CN109599445A CN109599445A CN201811604374.9A CN201811604374A CN109599445A CN 109599445 A CN109599445 A CN 109599445A CN 201811604374 A CN201811604374 A CN 201811604374A CN 109599445 A CN109599445 A CN 109599445A
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- Prior art keywords
- gasket
- chip
- hole
- backlight
- back electrode
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/93—Interconnections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/93—Interconnections
- H10F77/933—Interconnections for devices having potential barriers
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Abstract
本发明属于半导体光电类芯领域，具体涉及一种背光半导体光电类芯片及其互连方法，所述背光半导体光电类芯片包括垫片、芯片、背电极、导电银胶和引线；垫片中心处设有通孔；在通孔侧壁以及垫片一侧上下两面设有导通的金层作为引线框架；芯片通过树脂胶将粘接到垫片上且侧壁涂敷树脂胶；背电极固定在芯片上且朝向通孔；导电银胶灌注在通孔内且固化定型；将背电极过渡到垫片或印制电路板上。引线焊接在引线框架上。本发明结构简单，通过制备架桥垫片将背电极架空，再采用银浆灌注及固化的方式将背电极引出，最后采用引线焊接的方式完成信号采集，实现半导体光电芯片单管(阵列)与读出电路的互连。
The invention belongs to the field of semiconductor optoelectronic cores, and in particular relates to a backlight semiconductor optoelectronic chip and an interconnection method thereof. The backlight semiconductor optoelectronic chip includes a gasket, a chip, a back electrode, conductive silver glue and leads; A through hole is provided; a conductive gold layer is provided on the side wall of the through hole and the upper and lower sides of one side of the gasket as a lead frame; the chip is bonded to the gasket through resin glue and the side wall is coated with resin glue; the back electrode is fixed On the chip and toward the through hole; the conductive silver glue is poured into the through hole and cured and shaped; the back electrode is transitioned to the pad or printed circuit board. The leads are soldered to the lead frame. The invention has a simple structure. The back electrode is elevated by preparing a bridging gasket, and then the back electrode is drawn out by pouring and curing silver paste. Finally, the signal acquisition is completed by wire welding, and the single tube (array) of the semiconductor photoelectric chip can be connected with Interconnection of readout circuits.
Description
Technical field
The invention belongs to semiconductor optoelectronic class core fields, and in particular to a kind of backlight semiconductor optoelectronic class chip and its interconnection
Method.
Technical background
To semiconductor optoelectronic class chip, to avoid interference of the signal electrode to chip entry/exit light (i.e. entering light or out light), drop
Low junction capacity, the form deviated from frequently with signal electrode and entry/exit light direction prepare chip electrode, i.e., so-called back electrode.Especially
It is for high speed class photodetector, array based semiconductor photoelectric chip, and back electrode scheme seems particularly necessary.
Usually there are two types of technological approaches, i.e. through-hole interconnection and upside-down mounting for array based semiconductor photoelectric chip and reading circuit interconnection
Weldering.Through-hole interconnection technology etching through hole by each unit, and passivation layer and gold are successively precipitated in unit positive electrode and hole inner wall
Belong to layer, hole bottom metal layer is connected with the indium column of reading circuit electrode by pressure welding mode, finally realizes each unit positive electricity
The interconnection of pole and corresponding circuits electrode.But there are following two technological difficulties for this technology: 1) being to be easy to implement via etch, passivation
The deposition of layer and metal layer, it usually needs array chip is thinned to 50~70 μ m-thicks, thickness deviation≤± 0.5 μm, and is guaranteed
Chip integrality and planarization；2) passivation layer of through-hole wall need to meet resistance to pressure request, drain conditions do not occur.Another kind is realized
Semiconductor light electrical chip and the technological approaches of reading circuit interconnection are flip chip bondings, it is using respectively in unit positive electrode and reading
Indium column is grown in circuit respective electrode, then the interconnection of unit positive electrode Yu reading circuit electrode is realized by way of pressure welding.Base
The mode that back entering light is realized in flip-chip interconnection is the mainstream working method of current laser focal plane detector, but technology presence is set
The problems such as standby dependence is strong, higher cost.
Summary of the invention
(1) technical problems to be solved
The technical problem to be solved by the present invention is the existing mode device dependence for realizing back entering light based on flip-chip interconnection
By force, higher cost.
(2) technical solution
In order to solve the above technical problems, the present invention provides a kind of backlight semiconductor optoelectronic class chip and its interconnecting method.
A kind of backlight semiconductor optoelectronic class chip, including gasket, chip, back electrode, conductive silver glue and lead；
Through-hole is equipped at gasket center；It is used as and draws in the layer gold that through-hole side wall and gasket side upper and lower surface are equipped with conducting
Wire frame；
Chip will be adhered on gasket by resin glue and side wall application of resin glue；
Back electrode is fixed on chip and towards through-hole；
Conductive silver glue is poured in through-hole and solidifying and setting；
Back electrode is transitioned on gasket or printed circuit board.
Lead welds on the lead frames.
Further, described 3~7 μm of 3 thickness of layer gold.
Further, the resin glue 4 is epoxide-resin glue.
A kind of interconnecting method of backlight semiconductor optoelectronic class chip, steps are as follows:
S1 makes the gasket of a bridge-type, prepares through-hole at gasket center；Above and below through-hole side wall and gasket side
Two sides prepares the layer gold of mutual conduction as lead frame；
S2, by resin glue by die bonding to gasket, back electrode is towards shim through bore 2, and in side wall application of resin
Glue；
The gasket of bonding chip is inverted, conductive silver glue, solidifying and setting is perfused in through-hole by S3；
Back electrode is transitioned on gasket or printed circuit board by S4.
Further, the gasket size is 2mm × 2mm × 0.2mm, 150 μm of 2 diameter of through-hole.
Further, 3~7 μm of the layer gold thickness.
Further, the resin glue 4 is epoxide-resin glue.
Further, in step S3, solidify 3~4 hours when solidifying and setting at 150~179 DEG C.
Further, in step S4, back electrode is transitioned by way of the welding lead 8 on the lead frame of gasket front
On gasket or printed circuit board.
Further, in step S4, back electrode is transitioned into gasket by way of planting ball on the lead frame of gasket front
Or on printed circuit board.
(3) beneficial effect
Compared with prior art, the present invention have it is following the utility model has the advantages that
The configuration of the present invention is simple is maked somebody a mere figurehead back electrode by preparing bridge formation gasket, then using silver paste perfusion and cured side
Formula draws back electrode, finally completes signal acquisition by the way of lead welding, realizes semiconductor light electrical chip single tube (battle array
Column) with the interconnection of reading circuit.
Detailed description of the invention
Fig. 1 is backlight semiconductor optoelectronic class chip schematic diagram；
Fig. 2 is preparation backlight semiconductor optoelectronic class chip processes schematic diagram.
Specific embodiment
To keep the purpose of the present invention, content and advantage clearer, with reference to the accompanying drawings and examples, to of the invention
Specific embodiment is described in further detail.
Embodiment 1
A kind of backlight semiconductor optoelectronic class chip, as shown in Figure 1, including gasket 1, chip 5, back electrode 6, conductive silver glue 7
With lead 8；
Through-hole 2 is equipped at 1 center of gasket；The layer gold 3 of conducting is equipped in 2 side wall of through-hole and 1 side upper and lower surface of gasket
As lead frame；Described 3~7 μm of 3 thickness of layer gold.
Chip 5 will be adhered on gasket 1 by resin glue 4 (such as epoxide-resin glue) and side wall application of resin glue 4；
Back electrode 6 is fixed on chip 5 and towards through-hole 2；
Conductive silver glue 7 is poured in through-hole 2 and solidifying and setting；
Back electrode 6 is transitioned on gasket or printed circuit board.
Lead 8 welds on the lead frames.
Embodiment 2
It is below 0.5mm × 0.5mm × 0.4mm with size, the APD that back electrode is 100 μm of diameter carries on the back two pole of entering light photoelectricity
Pipe single tube further illustrates the present invention.
A kind of interconnecting method of backlight semiconductor optoelectronic class chip, steps are as follows:
S1, makes the gasket 1 of a bridge-type, and 1 size of gasket is 2mm × 2mm × 0.2mm；The system at gasket center
Standby through-hole 2,150 μm of 2 diameter of through-hole are made in the layer gold 3 of 2 side wall of through-hole and 1 side upper and lower surface of gasket preparation mutual conduction
For lead frame, 3~7 μm of 3 thickness of layer gold, as shown in Fig. 2 (a).
S2, by the way that chip 5 is adhered on gasket 1 with the DG-4 epoxide-resin glue 4 of middle blue morning twilight, back electrode 6 is towards pad
Piece through-hole 2 simultaneously keeps certain concentricity, and prevents the silver paste in next step process from leaking into core in side wall coating epoxide-resin glue 4
5 side of piece, after solidification as shown in Fig. 2 (b).
The gasket 1 of bonding chip 5 is inverted by S3, is perfused to solidify at 7,150~179 DEG C of conductive silver glue in through-hole 2 and be determined
Type 3~4 hours；In solidification process front half section, 7 mobility of conductive silver paste can be dramatically increased, 6 He of back electrode under the characteristic effect
Through-hole side wall layer gold 3 is connected to by conductive silver paste 7, and is finally completed solidifying and setting, as shown in Fig. 2 (c), (d).
Back electrode 6 is transitioned into gasket or printing electricity by way of the welding lead 8 on the lead frame of gasket front by S4
On the plate of road, as shown in Fig. 2 (e).
In step S4, back electrode 6 can also be transitioned into gasket by way of planting ball on the lead frame of gasket front
Or on printed circuit board.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, without departing from the technical principles of the invention, several improvement and deformations can also be made, these improvement and deformations
Also it should be regarded as protection scope of the present invention.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811604374.9A CN109599445A (en) | 2018-12-26 | 2018-12-26 | A kind of backlight semiconductor optoelectronic class chip and its interconnecting method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811604374.9A CN109599445A (en) | 2018-12-26 | 2018-12-26 | A kind of backlight semiconductor optoelectronic class chip and its interconnecting method |
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| CN109599445A true CN109599445A (en) | 2019-04-09 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1914490A (en) * | 2004-02-26 | 2007-02-14 | 浜松光子学株式会社 | Infrared sensor and method of producing the same |
| CN101567411A (en) * | 2009-05-26 | 2009-10-28 | 晶科电子（广州）有限公司 | Flip-chip integrated encapsulation structure of LED and method thereof |
| CN102326254A (en) * | 2008-11-04 | 2012-01-18 | 阵列光电子公司 | Devices and methods for ultrathin photodiode arrays on bonded supports |
| JP2016195276A (en) * | 2016-07-22 | 2016-11-17 | 株式会社東芝 | Semiconductor device |
| CN209298122U (en) * | 2018-12-26 | 2019-08-23 | 西南技术物理研究所 | A kind of backlight semiconductor optoelectronic class chip |
-
2018
- 2018-12-26 CN CN201811604374.9A patent/CN109599445A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1914490A (en) * | 2004-02-26 | 2007-02-14 | 浜松光子学株式会社 | Infrared sensor and method of producing the same |
| CN102326254A (en) * | 2008-11-04 | 2012-01-18 | 阵列光电子公司 | Devices and methods for ultrathin photodiode arrays on bonded supports |
| CN101567411A (en) * | 2009-05-26 | 2009-10-28 | 晶科电子（广州）有限公司 | Flip-chip integrated encapsulation structure of LED and method thereof |
| JP2016195276A (en) * | 2016-07-22 | 2016-11-17 | 株式会社東芝 | Semiconductor device |
| CN209298122U (en) * | 2018-12-26 | 2019-08-23 | 西南技术物理研究所 | A kind of backlight semiconductor optoelectronic class chip |
Non-Patent Citations (1)
| Title |
|---|
| 邹嘉佳;高宏;周金文;: "一种新型芯片粘接用导电银胶的性能研究", 电子与封装, no. 04, 20 April 2016 (2016-04-20) * |
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