CN109584801A - Pixel circuit, display panel, display device and driving method - Google Patents
Pixel circuit, display panel, display device and driving method Download PDFInfo
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- CN109584801A CN109584801A CN201811535362.5A CN201811535362A CN109584801A CN 109584801 A CN109584801 A CN 109584801A CN 201811535362 A CN201811535362 A CN 201811535362A CN 109584801 A CN109584801 A CN 109584801A
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
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- Electroluminescent Light Sources (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
Abstract
The present invention provides a kind of pixel circuit, display panel, display device and driving method, pixel circuit includes: first capacitor device, is connected between first node and second node connection；Second reset circuit, connect with second node, and the second reset voltage is applied to second node for the reset stage in pixel circuit；First reset circuit, connect with first node, and the first reset voltage is applied to first node for the sensing period in pixel circuit；Thin film transistor (TFT) is driven, drives the grid of thin film transistor (TFT) to connect with first node, the source electrode of thin film transistor (TFT) is driven to connect with second node；First switch thin film transistor (TFT), the grid of first switch thin film transistor (TFT) is connect with LED control signal line, the drain electrode of first switch thin film transistor (TFT) and the supply line of supply voltage connect, and the source electrode of first switch thin film transistor (TFT) is connect with the drain electrode of driving thin film transistor (TFT)；And Organic Light Emitting Diode, Organic Light Emitting Diode is between second node and power supply low potential.
Description
Technical field
The present invention relates to field of display technology, and in particular to a kind of pixel circuit, display panel, display device and driving side
Method.
Background technique
In recent years, Organic Light Emitting Diode (OLED, Organic Light-Emitting Diode) display device due to
Have the advantages that self-luminous, response time are short, contrast is high, wide viewing angle, low in energy consumption etc. various, is widely used.
But pressurization and high temperature, the film in OLED display are brilliant due to the limitation of crystallization process or for a long time
The characteristic (for example, threshold voltage or mobility) of body pipe (Thin Film Transistor, TFT) is easy to produce deviation.Although
There are also the prior arts to compensate for the deviation that the mobility of TFT generates on the basis of compensating threshold voltage deviation, but
There is a problem of that resetting is insufficient.
Summary of the invention
In view of this, the embodiment of the invention provides a kind of pixel circuit, display panel, display equipment and driving method,
To solve the problems, such as that resetting is insufficient.
The first aspect of the embodiment of the present invention is to provide a kind of pixel circuit, comprising: first capacitor device is connected to first
Between node and second node connection；Second reset circuit applies the second reset voltage for the reset stage in pixel circuit
It is added to second node；First reset voltage is applied to first segment for the sensing period in pixel circuit by the first reset circuit
Point；Thin film transistor (TFT) is driven, the grid of thin film transistor (TFT) is driven to connect with first node, drives the source electrode and the of thin film transistor (TFT)
The connection of two nodes；And Organic Light Emitting Diode, Organic Light Emitting Diode are connected between second node and power supply low potential.
In an embodiment of the present invention, first switch thin film transistor (TFT), the grid of first switch thin film transistor (TFT) and shine
Control signal wire connection, the drain electrode of first switch thin film transistor (TFT) and the supply line of supply voltage connect, and first switch film is brilliant
The source electrode of body pipe is connect with the drain electrode of driving thin film transistor (TFT)；First reset circuit includes second switch thin film transistor (TFT), and second
The grid of switching thin-film transistor is connect with the first scan signal line, the drain electrode of second switch thin film transistor (TFT) and the first resetting electricity
The supply line of pressure connects, and the source electrode of second switch thin film transistor (TFT) is connect with first node, and the second reset circuit is opened including the 5th
Thin film transistor (TFT) is closed, the drain electrode of the 5th switching thin-film transistor is connect with the supply line of the second reset voltage, second switch film
The grid of transistor is connect with the 4th scan signal line, and the source electrode of the 5th switching thin-film transistor is connect with second node.
In an alternative embodiment of the invention, above-mentioned pixel circuit further include: data write circuit is connect with first node,
Data voltage is applied to first node for the data write-in period in pixel circuit, wherein data write circuit includes the
Three switching thin-film transistors, the grid of third switching thin-film transistor are connect with the second scan signal line, and third switch film is brilliant
The drain electrode of body pipe is connect with data line, and the source electrode of third switching thin-film transistor is connect with first node.
In an alternative embodiment of the invention, above-mentioned pixel circuit further include: the second capacitor, one end of the second capacitor with
The drain electrode of first switch thin film transistor (TFT) connects, and the other end of the second capacitor is connect with second node.
In an alternative embodiment of the invention, above-mentioned pixel circuit further include: external compensation detection circuit connects with second node
It connects, the electric current of Organic Light Emitting Diode is monitored to light emitting diode for the external reading period in pixel circuit
Electric current compensates.
In an embodiment of the present invention, it drives thin film transistor (TFT) and first switch thin film transistor (TFT) is N-type MOSFET.
In an embodiment of the present invention, external compensation detection circuit includes the 4th switching thin-film transistor, and the 4th switch is thin
The grid of film transistor is connect with third scan signal line, and the source electrode of the 4th switching thin-film transistor is connect with second node.
The second aspect of the embodiment of the present invention is to provide a kind of pixel circuit, comprising: first capacitor device is connected to first
Between node and second node；Thin film transistor (TFT) is driven, the grid of thin film transistor (TFT) is driven to connect with first node, drives film
The source electrode of transistor is connect with second node；Switching thin-film transistor, the grid and LED control signal of switching thin-film transistor
Line connection, switching thin-film transistor are connected between the supply line of supply voltage and driving thin film transistor (TFT)；Organic light-emitting diodes
Pipe, Organic Light Emitting Diode is between second node and power supply low potential；And external compensation detection circuit, with second node
Connection is monitored to light emitting diode the electric current of Organic Light Emitting Diode for the external reading period in pixel circuit
Electric current compensate.
The third aspect of the embodiment of the present invention is to provide a kind of display panel, including the pixel in any of the above embodiment
Circuit.
The fourth aspect of the embodiment of the present invention is to provide a kind of display device, including above display panel.
5th aspect of the embodiment of the present invention is to provide the driving method of more than one pixel circuits, comprising: in pixel
The reset stage of circuit, controls the second reset circuit conducting in pixel circuit, and the second reset voltage is applied to pixel electricity
The source electrode of driving thin film transistor (TFT) in road；In the sensing period of pixel circuit, the second switch film in pixel circuit is controlled
First reset voltage is applied to the grid of driving thin film transistor (TFT) by transistor turns；In the data write-in of pixel circuit
Section, controls the third switching thin-film transistor conducting in pixel circuit, and data voltage is applied to driving thin film transistor (TFT)
Grid；In the light-emitting period of pixel circuit, the first switch thin film transistor (TFT) conducting of pixel circuit is controlled, so that being connected to drive
The lumination of light emitting diode of the source electrode of dynamic thin film transistor (TFT).
In an alternative embodiment of the invention, the above method further include: external in pixel circuit is read the period, control connection
In the 4th switching thin-film transistor conducting of the source electrode of driving thin film transistor (TFT), supervised with the electric current to Organic Light Emitting Diode
Control.
According to an embodiment of the invention, increasing the first resetting by the grid of the driving thin film transistor (TFT) in pixel circuit
Circuit, for after reset stage, i.e., the first reset voltage being further applied to driving thin film transistor (TFT) in the sensing period
Grid so that the reset process of pixel circuit is abundant, so that pixel circuit can be used for high-resolution display device.
Detailed description of the invention
Fig. 1 is a kind of schematic diagram of pixel circuit.
Fig. 2 is the illustrative driver' s timing figure of pixel circuit as shown in Figure 1.
Fig. 3 is the schematic diagram for the pixel circuit that one embodiment of the invention provides.
Fig. 4 be another embodiment of the present invention provides pixel circuit as shown in Figure 3 illustrative driver' s timing figure.
Fig. 5 is circuit state figure of the pixel circuit as shown in Figure 3 that provides of one embodiment of the invention in reset stage.
Fig. 6 is circuit of the pixel circuit as shown in Figure 3 that provides of one embodiment of the invention in threshold voltage storing time intervals
State diagram.
Fig. 7 is the circuit state that the period is written in data for the pixel circuit as shown in Figure 3 that one embodiment of the invention provides
Figure.
Fig. 8 is circuit state figure of the pixel circuit as shown in Figure 3 that provides of one embodiment of the invention in light-emitting period.
Fig. 9 is that the pixel circuit as shown in Figure 3 that one embodiment of the invention provides reads the circuit state of period in outside
Figure.
Figure 10 is the flow diagram of the driving method for the pixel circuit that one embodiment of the invention provides.
Figure 11 be another embodiment of the present invention provides pixel circuit driving method flow diagram.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that the described embodiment is only a part of the embodiment of the present invention, instead of all the embodiments.Based on this
Embodiment in invention, every other reality obtained by those of ordinary skill in the art without making creative efforts
Example is applied, shall fall within the protection scope of the present invention.
With the use of OLED display, there are luminous organic material aging, the problems such as TFT material aging, these are asked
Topic will cause the problems such as OLED display generates crosstalk or uneven display brightness in display.It the use of 7T1C is generally base
P type metal oxide semiconductor (Metal Oxide Semiconductor, the MOS) circuit of plinth carries out internal compensation to OLED
Non-uniform problem is shown to improve OLED display, but 7T1C circuit can not compensate the deviation that the mobility of TFT generates,
Also coupling effect caused by OLED decays can not be compensated.
Fig. 1 is a kind of schematic diagram of pixel circuit 100.
Fig. 2 is the illustrative driver' s timing figure of pixel circuit 100 as shown in Figure 1.
As shown in Figure 1, pixel circuit 100 includes OLED, driving TFT DT, switch TFT T1, T3 and T5 and capacitor
Cst1, Cst2-1 and Cst2-2, wherein TFT DT, T1, T3 and T5 are N-type metal-oxide-semiconductor.It should be understood that TFT DT, T1, T3 and T5
It may be other types of metal-oxide-semiconductor, for example, p-type metal-oxide-semiconductor.The embodiment of the present invention will be using above-mentioned transistor as N-type metal-oxide-semiconductor
For be illustrated, skilled artisans will appreciate that, when above-mentioned transistor be p-type metal-oxide-semiconductor, it is only necessary to interlock circuit
Suitably deform.
Capacitor Cst1 is connected between node g and node s, and the grid of driving TFT DT is connect with node g, drives TFT
The source electrode of DT is connect with node s.
The grid of switch TFT T1 is connect with the data line for applying LED control signal EMS, the leakage of switch TFT T1
Pole is connect with the power supply line for applying high level supply voltage Vdd, the drain electrode of the source electrode and driving TFT DT of switch TFT T1
Connection.High level supply voltage Vdd is applied to by switch TFT T1 in response to being input to the LED control signal EMS of its grid
Drive the source electrode of TFT DT.
The grid of switch TFT T3 connect with the scan line for applying scanning signal SC2, the drain electrode of switch TFT T3 and
Data line for applying data voltage Vdata connects, and the source electrode of switch TFT T3 is connect with node g.Switch TFT T3 response
In the scanning signal SC2 for being input to its grid, data voltage Vdata is applied to node g.
The grid of switch TFT T5 connect with the scan line for applying scanning signal SC4, the drain electrode of switch TFT T5 and
Data line for applying reference voltage Vref connects, and the source electrode of switch TFT T5 is connect with node s.Switch TFT T5 in response to
Reference voltage Vref is applied to node s by scanning signal SC4.
As depicted in figs. 1 and 2, pixel circuit 100 is write including reset stage t1, threshold voltage vt h storing time intervals t2, data
Enter period t3 and light-emitting period t4.
In reset stage t1, LED control signal EMS is inputted with low level, scanning signal SC2 and scanning signal SC4 with
High level input, switch TFT T3 and switch TFT T5 are connected.Scheduled reference voltage Vref is supplied to data line, node g's
Voltage is reset as reference voltage Vref, and the voltage of node s is also reset as reference voltage Vref.
In threshold voltage vt h storing time intervals (also referred to as sensing period) t2, scanning signal SC4 is inputted with low level, hair
Optical control signal EMS and scanning signal SC2 are inputted with high level, switch TFT T1, switch TFT T3 and driving TFT DT conducting.
Switch TFT T3 conducting, the current potential of the grid g of TFT DT are maintained at reference voltage Vref, driving TFT DT conducting, supply voltage
Vdd charges to the source electrode s of TFT DT, until drive TFT DT grid and source electrode pressure difference be Vth until, at this point, Vg-
Vs=Vth, and by the charge storage of Vth in capacitor Cst1, Vs=Vg-Vth=Vref-Vth.
In data write-in period t3, LED control signal EMS and scanning signal SC4 are inputted with low level, scanning signal
SC2 is inputted with high level, switch TFT T3 and driving TFT DT conducting.Switch TFT T3 conducting, applies to the grid g of TFT DT
Data voltage Vdata, and the voltage Vg at the grid g of TFT DT changes into Vdata-Vref across capacitor Cst1 and Cst2-1
Distribution, is then reflected at the source electrode s of TFT DT.According to transistor I-V curve equation I=k (Vgs-Vth)2It is found that driving
Electric current I is unrelated with the driving threshold voltage vt h of TFT DT, so that the driving current I of driving TFT DT stablizes, and then guarantees
OLED's stablizes display.
In light-emitting period t4, scanning signal SC2 and scanning signal SC4 are inputted with low level, LED control signal EMS with
High level input, switch TFT T1 and driving TFT DT conducting, generate driving current, and OLED is shone by driving current, is realized
The display of OLED display.
It should be understood that the above pixel circuit 100 can compensate the migration of TFT on the basis of compensating threshold voltage deviation
The deviation that rate generates can also compensate coupling effect caused by OLED decays, better solve OLED display and show not
Uniform problem.But one data (data) line charge reference voltage of the scan phase of the t1 to t3 in the above pixel circuit
Vref and data voltage Vdata both voltages may make resetting be not enough in this way.Moreover, with OLED display
The raising of resolution ratio, pixel quantity increase will lead to the insufficient pixel circuit 100 of resetting and be difficult to high-resolution OLED
Display device.In addition, the compensation of pixel circuit 100 is also not enough.
Illustrate the pixel circuit of the embodiment of the present invention below with reference to Fig. 3 and Fig. 4.
Fig. 3 be another embodiment of the present invention provides pixel circuit 200 schematic diagram.Fig. 4 is another embodiment of the present invention
The illustrative driver' s timing figure of the pixel circuit 200 as shown in Figure 3 provided.
As shown in figure 3, pixel circuit 200 includes: first capacitor device Cst1, the first reset circuit R1, driving TFT DT, the
One switch TFT T1 and OLED.First capacitor device Cst1 is connected between first node g and second node s connection；Second resetting
Circuit R2, connect with second node, and the second reset voltage is applied to second node for the reset stage in pixel circuit；The
One reset circuit R1, connect with first node g, for the threshold voltage storing time intervals (or sensing period) in pixel circuit 200
First reset voltage Vinit is applied to first node g；The grid of driving TFT DT is connect with first node g, drives TFT DT
Source electrode connect with second node s；OLED is connected between second node s and power supply low potential.
Specifically, as shown in Figure 3 and Figure 4, the first scan control line is used to provide the first scanning signal to the grid of T2
SC1 applies reset voltage Vinit to control T2 to the grid of DT.Data line is for providing data voltage Vdata.Power input
End is for providing supply voltage Vdd.Driving transistor DT is used to voltage data signal Vdata being converted into electric current.Second scanning
Control line is used to provide the second scanning signal SC2 to T3, is connected to controlling data line with the grid of transistor DT is driven.First sweeps
Control line is retouched for providing the 4th scanning signal SC4 to the grid of T5, applies reset voltage Vref to control T5 to the source electrode of DT.
Cst1 voltage Vdata for storing data.Light emitting control line is used to provide LED control signal EMS to T1.Above-mentioned pixel circuit
For driving OLED to shine.First reset circuit R1 and the second reset circuit R2 may include thin film transistor (TFT), reality of the invention
Apply that example is without being limited thereto, above-mentioned reset circuit may be other switches with similar functions.The anode and second node s of OLED
Connection, the cathode of OLED are connect with power supply low potential (for example, earthing potential).The switching thin-film transistor of the embodiment of the present invention and
Driving transistor includes but is not limited to the circuit or module that switching circuit, TFT etc. have control circuit on-off function, especially
NMOS TFT.For example, above-mentioned T1, T2, T3, T4 and T5 and DT can use NMOSTFT or NMOS LTPS (low temperature polycrystalline silicon)
TFT。
According to an embodiment of the invention, compared with pixel circuit 100, in the threshold voltage storing time intervals of pixel circuit 200
It is that first node g loads reference voltage Vref, but in addition the first reset circuit R1 of setting is first that t2, which does not use data line,
Node g provides the first reset voltage Vinit, so that the resetting of pixel circuit 200 is more abundant.
According to an embodiment of the invention, increasing the first resetting by the grid of the driving thin film transistor (TFT) in pixel circuit
Circuit, for after reset stage, i.e., the first reset voltage being further applied to driving thin film transistor (TFT) in the sensing period
Grid so that the reset process of pixel circuit is abundant, so that pixel circuit can be used for high-resolution display device.
Optionally, in another embodiment, above-mentioned pixel circuit further includes first switch TFT T1.First switch TFT T1
Grid connect with LED control signal EMS line, the supply line of the drain electrode of first switch TFT T1 and supply voltage connects, first
The source electrode of switch TFT T1 is connect with the drain electrode of driving TFT DT.
In an embodiment of the present invention, the first reset circuit R1 includes second switch TFT T2, second switch TFT T2's
Grid is connect with the first scanning signal SC1 line, and the drain electrode of second switch TFT T2 connects with the supply line of the first reset voltage Vinit
It connects, the source electrode of second switch TFT T2 is connect with first node g.
In another embodiment of the invention, the second reset circuit R2 includes the 5th switch TFT T5, the 5th switch TFT
The grid of T5 is connect with the 4th scanning signal SC4 line, the drain electrode and the supply of the second reset voltage Vref of the 5th switch TFT T5
Line connection, the source electrode of the 5th switch TFT T5 are connect with second node s.Further, in the reset stage t1 of pixel circuit 200
The voltage of second node s can be reset to Vref by period, the 5th switch TFT T5 conducting；In the threshold value electricity of pixel circuit 200
During pressing storing time intervals t2, the 5th switch TFT T5 is disconnected, and second switch TFT T2 conducting provides the first weight for first node g
Set voltage Vinit.
In another embodiment of the invention, pixel circuit 200 further includes data write circuit, is connect with first node g,
Data voltage Vdata is applied to first node g for the data write-in period t3 in pixel circuit 200, wherein data write-in
Circuit includes third switch TFT T3, and the grid of third switch TFT T3 is connect with the second scanning signal SC2 line, third switch
The drain electrode of TFT T3 is connect with data line, and the source electrode of third switch TFT T3 is connect with first node g.Further, in pixel
During the data write-in period t3 of circuit 200, third switch TFT T3 conducting can apply data to the voltage of first node g
Voltage Vdata.Understandably, in an embodiment of the present invention, the unpromising pixel circuit 200 of data line applies reset voltage,
And only data voltage Vdata is applied with for pixel circuit 200, so that resetting is more abundant, so that pixel circuit 200 can be with
For high-resolution display device.
In another embodiment of the invention, pixel circuit 200 further includes the second capacitor Cst2, the second capacitor Cst2
One end connect with the drain electrode of first switch TFT T1, the other end of the second capacitor Cst2 is connect with second node s.
In another embodiment of the invention, pixel circuit 200 further includes external compensation detection circuit E, with second node s
Connection is monitored the electric current of OLED for the external period t5 that reads in pixel circuit 200, so as to from outside to OLED into
Row compensation.
It can be from outside periodically according to an embodiment of the invention, external compensation detection circuit E is arranged on pixel circuit 200
The variation of OLED current is flowed through in monitoring, and is realized in real time from the decaying of external compensation OLED and TFT, so that pixel circuit 200
Compensation it is more abundant so that the display of OLED display is more uniform.
In an embodiment of the present invention, external compensation detection circuit E includes the 4th switch TFT T4, the 4th switch TFT T4
Grid connect with third scan signal line SC3, the source electrode of the 4th switch TFT T4 is connect with second node s.
In another embodiment of the invention, pixel circuit 200 includes: first capacitor device Cst1, driving TFT DT, switch
TFT T1, OLED and external compensation detection circuit E.First capacitor device Cst1 is connect with first node g and second node s；Driving
The grid of TFT DT is connect with first node g, and the source electrode of driving TFT DT is connect with second node s；The grid of switch TFT T1
It is connect with LED control signal EMS line, the drain electrode of switch TFT T1 is connect with the supply line of supply voltage Vdd, switch TFTT1's
Source electrode is connect with the drain electrode of driving TFT DT；The anode of OLED is connect with second node s, and the cathode and power supply low potential of OLED connects
It connects；External compensation detection circuit E, connect with second node s, for the external period t5 that reads in pixel circuit 200 to OLED
Electric current be monitored, to be compensated from outside to OLED.
It can be from outside periodically according to an embodiment of the invention, external compensation detection circuit E is arranged on pixel circuit 200
The variation of OLED current is flowed through in monitoring, and is realized in real time from the decaying of external compensation OLED and TFT, so that pixel circuit 200
Compensation it is more abundant so that the display of OLED display is more uniform.
In another embodiment of the invention, as shown in figure 3, pixel circuit 200 includes OLED, driving TFT DT, opens
Close TFTT1 to T5 and capacitor Cst1 and Cst2, wherein driving TFT DT and switch TFTT1 to T5 can be N-type MOS
Pipe, for example, N-type metal-oxide-semiconductor can using low-temperature polysilicon oxide (Low Temperature Polycrystalline Oxide,
LTPO) technology is made.
The grid of first switch TFT T1 is connect with the data line for applying LED control signal EMS, first switch TFT
The drain electrode of T1 is connect with the data line for applying high level supply voltage Vdd, and the source electrode of first switch TFT T1 is opened with driving
Close the drain electrode connection of TFT DT.First switch TFT T1 will pass through number in response to being input to the LED control signal EMS of its grid
The drain electrode of driving TFT DT is applied to according to the high level supply voltage Vdd that line inputs.It thus can be to driving switch TFT DT
Drain electrode apply high level supply voltage Vdd, meanwhile, the anode of the source electrode of driving switch TFT DT and OLED connect.
The grid of second switch TFT T2 connect with the first scan line for applying the first scanning signal SC1, drain and
Initial line for applying reset voltage Vinit connects, and source electrode is connect with the grid of driving switch TFTDT.Second switch TFT
T2 connects the grid of the initial line and driving switch TFTDT for applying reset voltage Vinit in response to the first scanning signal SC1
Pole.
The grid of third switch TFT T3 is connect with the second scan line for being applied the second scanning signal SC2, drain electrode and quilt
Apply the data line connection of data voltage Vdata, source electrode is connect with the grid of driving switch TFTDT.Third switch TFT T3 is rung
Ying Yu is input to the second scanning signal SC2 of its gate node, and the data voltage Vdata inputted by data line is applied to drive
The grid of dynamic switch TFT DT.
The grid of 4th switch TFT T4 is connect with the third scan line for being applied third scanning signal SC3, is drained and outer
Portion monitors circuit connection, and source electrode is connect with the source electrode of driving switch TFTDT.4th switch TFT T4 is in response to being input to its grid
Third scanning signal SC3, realize the variation of the electric current from external regular monitoring OLED, in real time from external compensation OLED and
The decaying of TFT.
The grid of 5th switch TFT T5 is connect with the 4th scan line for being applied the 4th scanning signal SC4, drain electrode and quilt
Apply the data line connection of reference voltage Vref, the anode connection of source electrode and OLED.5th switch TFT T5 is swept in response to the 4th
It retouches signal SC4 and connects the anode of the data line and OLED for applying reference voltage Vref.
It is described in detail below with reference to the course of work of the Fig. 3 to Fig. 9 to the embodiment of the present invention.
As shown in figs. 3 to 9, in reset stage t1, the first scanning signal SC1, the second scanning signal SC2, shine control
Signal EMS processed and third scanning signal SC3 are inputted with low level, and the 4th scanning signal SC4 is inputted with high level, the 5th switch
TFT T5 conducting.The voltage of the source electrode of driving switch TFT DT is reset as reference voltage Vref.
In Vth storing time intervals t2, the second scanning signal SC2, third scanning signal SC3 and the 4th scanning signal SC4 with
Low level input, the first scanning signal SC1 and LED control signal EMS are inputted with high level, and first switch TFT T1, second open
Close TFT T2 and driving switch TFTDT conducting.At this point, T2 is connected, reset voltage Vinit makes the grid of driving switch TFT DT
Voltage be reset as Vg=Vinit, T1 conducting, until the grid of DT and the pressure difference of source electrode are Vth, at this point, Vg-Vs=Vth,
And by the charge storage of Vth in capacitor Cst1, Vs=Vg-Vth=Vinit-Vth.In an embodiment of the present invention, it increases
Switch T2, allows the grid that reset voltage Vinit is applied to DT in the t2 period, so that the weight of pixel circuit 200
It sets more sufficiently.
In data write-in and mobility compensation period t3, the first scanning signal SC1, third scanning signal SC3 and the 4th
Scanning signal SC4 is inputted with low level, and the second scanning signal SC2 and LED control signal EMS are inputted with high level, third switch
TFT T3, first switch TFT T1 and driving switch TFTDT conducting.At this point, T3 is connected, grid of the data voltage Vdata to DT
Node applies data voltage Vdata, Vg=Vdata, and according to the voltage Vg of the gate node of charge sharing principle DT across electricity
Hold Cst1 and Cst2 distribution, the source electrode of DT, Vs=Vinit-Vth+ (Vdata-Vinit) × C1/ (C1+C2)+Vu are arrived in reflection.Very
Obviously, in an embodiment of the present invention, switch T2 is increased, allows and reset voltage Vinit is applied to DT in the t2 period
Grid.Meanwhile in the t3 period, T3 conducting, it is electric that the data line where data voltage Vdata can apply data to the grid of DT
Press Vdata.The problem of resetting is not enough is avoided, so that the pixel circuit 200 of the embodiment of the present invention can be used for height
The OLED display of resolution ratio.
In light-emitting period t4, the first scanning signal SC1, the second scanning signal SC2, third scanning signal SC3 and the 4th
Scanning signal SC4 is inputted with low level, and LED control signal EMS is inputted with high level, first switch TFT T1 and driving switch
TFTDT conducting.At this point, Vg=Vdata+EL_Vth, Vs=Vinit-Vth+ (Vdata-Vinit) × C1/ (C1+C2)+Vu+
EL_Vth, so that OLED is shone by driving current.
Outside read period t5 in, the first scanning signal SC1, the second scanning signal SC2 and the 4th scanning signal SC4 with
Low level input, third scanning signal SC3 and LED control signal EMS are inputted with high level, and first switch TFT T1, the 4th open
Close TFT T4 and driving switch TFTDT conducting.It therefore, can be by the 4th switch TFT T4 from the change of external regular monitoring electric current
Change, realizes in real time from the decaying of external compensation OLED and TFT.
In one embodiment of the invention, a kind of display panel is additionally provided, which includes any of the above-described reality
Apply pixel circuit mentioned by example.
In one embodiment of the invention, a kind of display device is additionally provided, which includes any of the above-described reality
Apply pixel circuit mentioned by example.
Figure 10 is the flow diagram of the driving method for the pixel circuit that one embodiment of the invention provides.
As shown in Figures 3 to 10, driving method includes:
1010, in the reset stage t1 of pixel circuit 200, the second reset circuit R2 conducting in pixel circuit 200 is controlled,
Source electrode with the driving TFT DT being applied to the second reset voltage Vref in pixel circuit 200；
1020, in the sensing period t2 of pixel circuit 200, the second switch TFT T2 conducting in pixel circuit 200 is controlled,
The first reset voltage Vinit to be applied to the grid of driving TFT DT；
1030, period t3 is written in the data of pixel circuit 200, controls the third switch T3 conducting in pixel circuit 200,
Data voltage Vdata to be applied to the grid of driving TFT DT；
1040, in the light-emitting period t4 of pixel circuit 200, the first switch TFT T1 conducting of pixel circuit 200 is controlled, with
So that the OLED for being connected to the source electrode of driving TFT DT shines.
According to an embodiment of the invention, driving film of the pixel circuit driven by the above driving method in pixel circuit
The grid of transistor increases the first reset circuit, for after reset stage, that is, sensing the period for the first reset voltage
It is further applied to the grid of driving thin film transistor (TFT), so that the reset process of pixel circuit is abundant, to compensate for moving for TFT
The deviation that shifting rate generates.
Figure 11 be another embodiment of the present invention provides pixel circuit driving method flow diagram.
As shown in Figures 3 to 10, in an alternative embodiment of the invention, the above method further include: 1150, in pixel circuit
200 external reading period t5, control is connected to the 4th switch TFT T4 conducting of the source electrode of driving TFT DT, to OLED's
Electric current is monitored.
According to an embodiment of the invention, the pixel circuit driven by the above driving method can be from external regular monitoring stream
The variation of OLED current is crossed, and then is realized in real time from the decaying of external compensation OLED and TFT, so that the compensation of pixel circuit is more
Sufficiently, so that the display of OLED display is more uniform.
Setting, structure and function of each switch, each circuit in the driving method of pixel circuit etc. can with reference to
The specific descriptions of the embodiment part of upper pixel circuit, in order to avoid repeating, this will not be repeated here.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, can easily think of the change or the replacement, and should all contain
Lid is within protection scope of the present invention.Therefore, protection scope of the present invention should be based on the protection scope of the described claims.
Claims (10)
1. a kind of pixel circuit characterized by comprising
First capacitor device is connected between first node and second node connection；
Second reset voltage is applied to second section for the reset stage in the pixel circuit by the second reset circuit
Point；
First reset voltage is applied to the first segment for the sensing period in the pixel circuit by the first reset circuit
Point；
Thin film transistor (TFT) is driven, the grid of the driving thin film transistor (TFT) is connect with the first node, and the driving film is brilliant
The source electrode of body pipe is connect with the second node；
Organic Light Emitting Diode, the Organic Light Emitting Diode are connected between the second node and power supply low potential.
2. pixel circuit according to claim 1, which is characterized in that further include:
The grid of first switch thin film transistor (TFT), the first switch thin film transistor (TFT) is connect with LED control signal line, described
The supply line of the drain electrode of first switch thin film transistor (TFT) and supply voltage connects, the source electrode of the first switch thin film transistor (TFT) with
The drain electrode connection of the driving thin film transistor (TFT),
Wherein, first reset circuit includes second switch thin film transistor (TFT), the grid of the second switch thin film transistor (TFT)
It is connect with the first scan signal line, the drain electrode of the second switch thin film transistor (TFT) connects with the supply line of first reset voltage
It connects, the source electrode of the second switch thin film transistor (TFT) is connect with the first node；
Second reset circuit include the 5th switching thin-film transistor, the drain electrode of the 5th switching thin-film transistor with it is described
The supply line of second reset voltage connects, and the grid of the second switch thin film transistor (TFT) is connect with the 4th scan signal line, institute
The source electrode for stating the 5th switching thin-film transistor is connect with the second node.
3. pixel circuit according to claim 2, which is characterized in that further include:
Data write circuit is connect with the first node, for the data write-in period in the pixel circuit that data are electric
Pressure is applied to the first node, wherein the data write circuit includes third switching thin-film transistor, the third switch
The grid of thin film transistor (TFT) is connect with the second scan signal line, and the drain electrode of the third switching thin-film transistor and data line connect
It connects, the source electrode of the third switching thin-film transistor is connect with the first node.
4. pixel circuit according to any one of claim 1 to 3, which is characterized in that further include:
Second capacitor, one end of second capacitor are connect with the drain electrode of the first switch thin film transistor (TFT), and described
The other end of two capacitors is connect with the second node.
5. pixel circuit according to any one of claim 1 to 3, which is characterized in that further include: external compensation detection electricity
Road is connect with the second node, for the external read access time section in the pixel circuit to the Organic Light Emitting Diode
Electric current be monitored and compensated with the electric current to the light emitting diode.
6. pixel circuit according to claim 5, which is characterized in that the external compensation detection circuit includes the 4th switch
The grid of thin film transistor (TFT), the 4th switching thin-film transistor is connect with third scan signal line, the 4th switch film
The source electrode of transistor is connect with the second node.
7. pixel circuit according to any one of claim 1 to 3, which is characterized in that the driving thin film transistor (TFT) and
The first switch thin film transistor (TFT) is N-type MOSFET.
8. a kind of pixel circuit characterized by comprising
First capacitor device, is connected between first node and second node；
Thin film transistor (TFT) is driven, the grid of the driving thin film transistor (TFT) is connect with the first node, and the driving film is brilliant
The source electrode of body pipe is connect with the second node；
The grid of switching thin-film transistor, the switching thin-film transistor is connect with LED control signal line, the switch film
Transistor is connected between the supply line of supply voltage and the driving thin film transistor (TFT)；
Organic Light Emitting Diode, the Organic Light Emitting Diode is between the second node and power supply low potential；And
External compensation detection circuit is connect with the second node, right for the external read access time section in the pixel circuit
The electric current of the Organic Light Emitting Diode is monitored to be compensated with the electric current to the light emitting diode.
9. a kind of display panel, including such as pixel circuit described in any item of the claim 1 to 8.
10. a kind of driving method of pixel circuit characterized by comprising
In the reset stage of the pixel circuit, the second reset circuit conducting in the pixel circuit is controlled, by the second weight
Set the source electrode for the driving thin film transistor (TFT) that voltage is applied in the pixel circuit；
In the sensing period of the pixel circuit, the second switch thin film transistor (TFT) conducting in the pixel circuit is controlled, it will
First reset voltage is applied to the grid of the driving thin film transistor (TFT)；
The period is written in the data of the pixel circuit, controls the third switching thin-film transistor conducting in the pixel circuit,
Data voltage to be applied to the grid of the driving thin film transistor (TFT)；
In the light-emitting period of the pixel circuit, the first switch thin film transistor (TFT) conducting of the pixel circuit is controlled, so that
It is connected to the lumination of light emitting diode of the source electrode of the driving thin film transistor (TFT).
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| CN201811535362.5A CN109584801A (en) | 2018-12-14 | 2018-12-14 | Pixel circuit, display panel, display device and driving method |
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|---|---|---|---|
| CN201811535362.5A CN109584801A (en) | 2018-12-14 | 2018-12-14 | Pixel circuit, display panel, display device and driving method |
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|---|---|---|---|---|
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103778883A (en) * | 2012-10-25 | 2014-05-07 | 群康科技(深圳)有限公司 | Pixel driving circuit of active matrix organic light-emitting diode and method of pixel driving circuit |
| CN103886830A (en) * | 2012-12-20 | 2014-06-25 | 乐金显示有限公司 | Method Of Driving Organic Light Emitting Display Device |
| CN105185300A (en) * | 2015-08-03 | 2015-12-23 | 深圳市华星光电技术有限公司 | Amoled pixel driving circuit and pixel driving method |
| CN106663407A (en) * | 2014-07-04 | 2017-05-10 | 乐金显示有限公司 | Oled display device |
| CN107301845A (en) * | 2017-08-23 | 2017-10-27 | 深圳市华星光电半导体显示技术有限公司 | Pixel-driving circuit and its driving method |
| CN107342052A (en) * | 2017-08-18 | 2017-11-10 | 深圳市华星光电半导体显示技术有限公司 | Pixel-driving circuit for OLED display devices |
| CN107393478A (en) * | 2017-08-24 | 2017-11-24 | 深圳市华星光电半导体显示技术有限公司 | Pixel internal compensation circuit and driving method |
| CN107564467A (en) * | 2016-07-01 | 2018-01-09 | 三星显示有限公司 | Pixel, level circuit and organic light emitting display device |
| CN107731161A (en) * | 2016-08-12 | 2018-02-23 | 鸿富锦精密工业（深圳）有限公司 | Display device |
| CN108877650A (en) * | 2017-05-12 | 2018-11-23 | 京东方科技集团股份有限公司 | Pixel-driving circuit, driving compensation method, display base plate and display device |
-
2018
- 2018-12-14 CN CN201811535362.5A patent/CN109584801A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103778883A (en) * | 2012-10-25 | 2014-05-07 | 群康科技(深圳)有限公司 | Pixel driving circuit of active matrix organic light-emitting diode and method of pixel driving circuit |
| CN103886830A (en) * | 2012-12-20 | 2014-06-25 | 乐金显示有限公司 | Method Of Driving Organic Light Emitting Display Device |
| CN106663407A (en) * | 2014-07-04 | 2017-05-10 | 乐金显示有限公司 | Oled display device |
| CN105185300A (en) * | 2015-08-03 | 2015-12-23 | 深圳市华星光电技术有限公司 | Amoled pixel driving circuit and pixel driving method |
| CN107564467A (en) * | 2016-07-01 | 2018-01-09 | 三星显示有限公司 | Pixel, level circuit and organic light emitting display device |
| CN107731161A (en) * | 2016-08-12 | 2018-02-23 | 鸿富锦精密工业（深圳）有限公司 | Display device |
| CN108877650A (en) * | 2017-05-12 | 2018-11-23 | 京东方科技集团股份有限公司 | Pixel-driving circuit, driving compensation method, display base plate and display device |
| CN107342052A (en) * | 2017-08-18 | 2017-11-10 | 深圳市华星光电半导体显示技术有限公司 | Pixel-driving circuit for OLED display devices |
| CN107301845A (en) * | 2017-08-23 | 2017-10-27 | 深圳市华星光电半导体显示技术有限公司 | Pixel-driving circuit and its driving method |
| CN107393478A (en) * | 2017-08-24 | 2017-11-24 | 深圳市华星光电半导体显示技术有限公司 | Pixel internal compensation circuit and driving method |
Cited By (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110097842A (en) * | 2019-01-25 | 2019-08-06 | 友达光电股份有限公司 | Pixel circuit and its detection method |
| CN111341249A (en) * | 2019-05-08 | 2020-06-26 | 友达光电股份有限公司 | Pixel circuit and related display panel with adjustable driving current pulse width |
| TWI712021B (en) * | 2019-05-08 | 2020-12-01 | 友達光電股份有限公司 | Pixel circuit capable of adjusting pulse width of driving current and related display panel |
| US10964254B2 (en) | 2019-05-08 | 2021-03-30 | Au Optronics Corporation | Pixel circuit for adjusting pulse width of driving current and display panel having the same |
| CN111341249B (en) * | 2019-05-08 | 2021-03-30 | 友达光电股份有限公司 | Pixel circuit capable of adjusting drive current pulse width and related display panel |
| CN110189701A (en) * | 2019-06-28 | 2019-08-30 | 京东方科技集团股份有限公司 | Pixel-driving circuit and its driving method, display panel and display device |
| CN110444161A (en) * | 2019-06-28 | 2019-11-12 | 福建华佳彩有限公司 | A kind of internal compensation circuit |
| US11263969B2 (en) * | 2019-08-30 | 2022-03-01 | Boe Technology Group Co., Ltd. | Pixel circuit, parameter detection method, display panel and display device |
| CN110517641A (en) * | 2019-08-30 | 2019-11-29 | 京东方科技集团股份有限公司 | Pixel circuit, parameter detection method, display panel and display device |
| CN111063294A (en) * | 2019-12-20 | 2020-04-24 | 深圳市华星光电半导体显示技术有限公司 | Pixel driving circuit and display panel |
| US11315487B2 (en) | 2019-12-20 | 2022-04-26 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Pixel driving circuit and display panel |
| CN111179833A (en) * | 2020-02-11 | 2020-05-19 | 京东方科技集团股份有限公司 | Pixel circuit, driving method thereof and display device |
| CN111986622A (en) * | 2020-08-27 | 2020-11-24 | 武汉华星光电技术有限公司 | Driving circuit, driving method thereof and display device |
| CN113552737A (en) * | 2021-06-09 | 2021-10-26 | 信利（惠州）智能显示有限公司 | Test method suitable for TFT-LCD single screen test photoelectric parameter |
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Application publication date: 20190405 |