CN109576784A - A kind of preparation method and device of SiC epitaxial layer - Google Patents
A kind of preparation method and device of SiC epitaxial layer Download PDFInfo
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- CN109576784A CN109576784A CN201710911736.8A CN201710911736A CN109576784A CN 109576784 A CN109576784 A CN 109576784A CN 201710911736 A CN201710911736 A CN 201710911736A CN 109576784 A CN109576784 A CN 109576784A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 38
- 239000007789 gas Substances 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 238000012544 monitoring process Methods 0.000 claims abstract description 39
- 239000012535 impurity Substances 0.000 claims abstract description 29
- 239000012495 reaction gas Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 6
- 239000010439 graphite Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 claims description 4
- 229910003818 SiH2Cl2 Inorganic materials 0.000 claims description 3
- 238000004566 IR spectroscopy Methods 0.000 claims description 2
- 230000009466 transformation Effects 0.000 claims 1
- 238000004458 analytical method Methods 0.000 description 5
- 238000000407 epitaxy Methods 0.000 description 5
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008447 perception Effects 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
- C30B25/205—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer the substrate being of insulating material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention provides the preparation method and device of a kind of SiC epitaxial layer, and wherein preparation method is the following steps are included: provide a SiC substrate, and SiC substrate is put into a reaction chamber；It is passed through reaction gas and impurity gas to reaction chamber, so that reaction gas and impurity gas is blowed to SiC substrate surface, and the airflow direction of reaction gas and impurity gas is perpendicular to SiC substrate surface；SiC substrate is heated, and SiC epitaxial layer is grown on SiC substrate surface using chemical vapour deposition technique；The doping concentration for the SiC epitaxial layer that system monitoring is growing, and the gas flow for the impurity gas being passed through according to the doping concentration control monitored are monitored using light wave.Reaction gas and impurity gas are vertically blowed to SiC substrate surface by the present invention, and light wave monitoring system real-time monitoring doping concentration can be used, to obtain the thickness uniformity and the higher SiC epitaxial layer of doping concentration uniformity on the SiC substrate surface, it realizes the accurate control to doping concentration, obtains high yield, high performance SiC epitaxial layer.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to the preparation method and device of a kind of SiC epitaxial layer.
Background technique
As a kind of novel semiconductor material, SiC is short as manufacturing with its excellent physicochemical characteristics and electrical characteristics
Wavelength opto-electronic device, high-temperature device, Flouride-resistani acid phesphatase device and high-power, the most important semiconductor material of great number electronic device.It is special
It is not under extreme condition and mal-condition in application, the characteristic of SiC device is considerably beyond Si device and GaAs device.Cause
This, SiC device gradually becomes one of Primary Component, plays increasingly important role.
In SiC device, the thickness uniformity of epitaxial layer and the uniformity of doping concentration are for obtaining high yield, Gao Xing
It can be particularly important.Generally use SiH4And C3H8As reaction gas, chemical vapor deposition is carried out at atmosheric pressure to grow
SiC epitaxial layer.Furthermore, it is also proposed that decompression method, hydride method and vertical current method, to obtain higher growth rate.
Patent publication No. is that a patent document of CN106876258A discloses a kind of super uniform doping large area
The preparation method and its growth chamber structure of SiC epitaxial layer.The preparation method of the super uniform doping large area SiC epitaxial layer exists
Conventional LPCVD epitaxial growth source main air inlet pipe road additionally increases by two side air inlet pipelines, by adjusting two side air inlet pipelines
The size of the growth source category and intake that are passed through, in conjunction with rotary-tray structure, to adjust atmosphere in entire large area SiC epitaxial layer
Growth source distribution in enclosing, so that the ratio in the growth source in reaction chamber interior atmosphere is adjusted, to adjust large area SiC epitaxial layer
Doping concentration and the thickness uniformity.
However, being proposed to obtain higher yield and better performance for the uniformity of film thickness and doping concentration
Higher requirement.In view of this, it is really necessary to provide a kind of new SiC epitaxy method, to improve epitaxy layer thickness and doping
The uniformity of concentration.
Summary of the invention
In view of prior art described above, the purpose of the present invention is to provide a kind of preparation method of SiC epitaxial layer and dresses
It sets, for solving the homogeneity question of the thickness of SiC epitaxial layer and doping concentration in the prior art.
In order to achieve the above objects and other related objects, the present invention provides a kind of preparation method of SiC epitaxial layer, including with
Lower step:
One SiC substrate is provided, and the SiC substrate is put into a reaction chamber；
It is passed through reaction gas and impurity gas to the reaction chamber, blows to the reaction gas and impurity gas described
SiC substrate surface, and the airflow direction of the reaction gas and impurity gas is perpendicular to the SiC substrate surface；
The SiC substrate is heated, SiC epitaxial layer is grown on the SiC substrate surface using chemical vapour deposition technique；
The doping concentration of the SiC epitaxial layer that is growing using light wave monitoring system monitoring, and according to monitoring
The gas flow for the impurity gas that doping concentration control is passed through.
Optionally, the reaction gas is SiH2Cl2、C3H8And H2。
Optionally, when growing the SiC epitaxial layer, the air pressure of the reaction chamber is 0.4-0.6torr.
Optionally, when growing the SiC epitaxial layer, the SiC substrate is heated to 1400-1600 DEG C.
Optionally, the impurity gas is gas containing N, gas containing Al or gas containing B.
Optionally, the light wave monitoring system is growing described using the monitoring of ftir analysis method
The doping concentration of SiC epitaxial layer.
In order to achieve the above objects and other related objects, the present invention also provides a kind of preparation facilities of epitaxial layer, comprising:
Reaction chamber is equipped with air inlet at the top of the reaction chamber, is equipped with vacuum evacuation in the reaction chamber bottom
Mouthful；
Warm table is set in the reaction chamber, for carrying and heating substrate；
There is air inlet shower an entrance and multiple shuntings to export, the entrance and the reaction chamber of the air inlet shower
The air inlet at top connects, and multiple shuntings outlet of the air inlet shower is set to above the warm table；
Light wave monitors system, is set to the top of the reaction chamber, and the shunting detected across the air inlet shower exports
And the light wave of air inlet, to monitor the doping concentration of the epitaxial layer of the substrate surface growth.
Optionally, multiple shuntings outlet of the air inlet shower is uniformly distributed, and makes the gas being passed through on the warm table
Square uniform divided flows, and vertically blow to the substrate.
Optionally, the light wave monitoring system monitors the substrate surface life using ftir analysis method
The doping concentration of long epitaxial layer.
Optionally, the preparation facilities of the epitaxial layer further includes admission line, is set to the top of the reaction chamber, institute
It states admission line one end to connect with the air inlet of the reaction chamber, the other end is connect with external air source.
Still optionally further, the monitoring window of the light wave monitoring system is set on the inner wall of the admission line, is made
At least one described shuntings outlet via the air inlet and the air inlet shower relatively.
Optionally, the preparation facilities of the epitaxial layer further includes doping concentration control system and gas flow controller；Institute
It states doping concentration control system to connect with light wave monitoring system, obtains the monitoring data of the light wave monitoring system, according to
The doping concentration of the epitaxial layer of growth controls the gas flow controller, to control the doping for being passed through the reaction chamber
Gas flow；The gas flow controller controls corresponding impurity gas according to the instruction of the doping concentration control system
Flow.
Optionally, the warm table uses the graphite heating platform with SiC coating.
Optionally, the air inlet shower uses the graphite shower with SiC coating.
Optionally, temperature monitor is provided at the warm table.
Optionally, the substrate is SiC wafer, diameter 100mm, 150mm or 200mm.
As described above, the preparation method and device of SiC epitaxial layer of the invention, have the advantages that
Reaction gas and impurity gas vertically blow to SiC substrate surface by the present invention, and using air inlet shower to being passed through
Reaction gas and impurity gas carry out uniform divided flows, so as to obtain the thickness uniformity on the SiC substrate surface and adulterate dense
Spend the higher SiC epitaxial layer of uniformity.System real-time monitoring is monitored using light wave, utilizes ftir analysis
The doping concentration for the SiC epitaxial layer that method (FT-IR) accurate perception is growing, and feed back to doping concentration control system and gas
Flow controller, so that the automatic control to dopant gas flow can be realized.Therefore, using the system of SiC epitaxial layer of the invention
The uniformity of epitaxy layer thickness and doping concentration can be improved in Preparation Method and device, realizes the accurate control to doping concentration, from
And it can get high yield, high performance SiC epitaxial layer.
Detailed description of the invention
Fig. 1 is shown as the preparation method schematic diagram of SiC epitaxial layer provided in an embodiment of the present invention.
Fig. 2 is shown as the preparation facilities schematic diagram of SiC epitaxial layer provided in an embodiment of the present invention.
Component label instructions
100 reaction chambers
101 air inlets
102 vaccum exhaust outlets
103 admission lines
200 warm tables
201 temperature monitors
300 air inlet showers
301 entrances
302 shunt outlet
400 light waves monitor system
401 monitoring windows
500 doping concentration control systems
600 gas flow controllers
700 substrates
S1-S4 step
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.It should be noted that in the absence of conflict, following embodiment and implementation
Feature in example can be combined with each other.
It should be noted that illustrating the basic structure that only the invention is illustrated in a schematic way provided in following embodiment
Think, only shown in schema then with related component in the present invention rather than component count, shape and size when according to actual implementation
Draw, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its assembly layout kenel
It is likely more complexity.
In order to improve the yield and performance of SiC epitaxial layer, the present invention provides a kind of preparation methods of SiC epitaxial layer, can
To improve the uniformity of epitaxy layer thickness and doping concentration, referring to Fig. 1, the following steps are included:
S1 provides a SiC substrate, and the SiC substrate is put into a reaction chamber；
S2 is passed through reaction gas and impurity gas to the reaction chamber, and the reaction gas and impurity gas is made to blow to institute
SiC substrate surface is stated, and the airflow direction of the reaction gas and impurity gas is perpendicular to the SiC substrate surface；
S3 heats the SiC substrate, grows SiC epitaxial layer on the SiC substrate surface using chemical vapour deposition technique；
The doping concentration of the SiC epitaxial layer that S4 is growing using light wave monitoring system monitoring, and according to monitoring
The gas flow of the impurity gas that is passed through of doping concentration control.
Specifically, the SiC substrate can be SiC wafer, and diameter can be 100mm, 150mm, 200mm or other are suitable
The SiC crystal of the size of conjunction, the SiC substrate surface answers zero defect, in favor of growing the epitaxial layer of high quality.
Specifically, the reaction gas can use the reaction gas being suitable for chemical vapour deposition technique growth SiC film,
The present embodiment is preferably SiH2Cl2、C3H8And H2.When growing the SiC epitaxial layer, the air pressure of the reaction chamber can be
0.4-0.6torr, the present embodiment are preferably 0.5torr, heat the SiC substrate to 1400-1600 DEG C, the present embodiment is preferably
1500 DEG C, lower temperature is conducive to obtain the smooth film in surface.
Specifically, according to the needs actually adulterated, the impurity gas can be gas containing N, gas containing Al or gas containing B
Body, for example, it may be NH3、N2、N2H2, TMA (trimethyl aluminium), B2H6Deng.
Specifically, ftir analysis method (FT-IR) monitoring is can be used in the light wave monitoring system
The doping concentration of the SiC epitaxial layer of growth.The impurity gas that adjustment is passed through is controlled according to the doping concentration of real-time monitoring
Flow, so as to accurately obtain required doping concentration.
For the ease of realizing above-mentioned manufacture craft, the present invention also provides a kind of preparation facilities of epitaxial layer, please refer to figure
2, which includes:
Reaction chamber 100 is equipped with air inlet 101 at the top of the reaction chamber, is equipped in the reaction chamber bottom true
Idle discharge port 102；
Warm table 200 is set in the reaction chamber 100, for carrying and heating substrate 700；
Air inlet shower 300 has an entrance 301 and multiple shuntings outlet 302, the entrance 301 of the air inlet shower 300
It is connect with the air inlet 101 at 100 top of reaction chamber, multiple shuntings outlet 302 of the air inlet shower 300 is set to institute
State the top of warm table 200；
Light wave monitors system 400, is set to the top of the reaction chamber 100, detects across the air inlet shower 300
The light wave of outlet 302 and air inlet 101 is shunted, to monitor the doping concentration of the epitaxial layer of 700 surface of the substrate growth.
Specifically, the reaction chamber 100 is airtight vacuum chamber, is only passed through gas by air inlet, is arranged by vacuum
Port vacuumizes and is discharged gas.
The air inlet shower 300 can be such that the gas being passed through shunts above the warm table 200, and vertically blow to the lining
700 surface of bottom.As the preferred embodiment of the present embodiment, multiple shuntings outlet 302 of the air inlet shower 300 is uniformly distributed, and is made
The gas being passed through uniform divided flows above the warm table 200.
Specifically, the light wave monitoring system 400 monitors the substrate 700 using ftir analysis method
The doping concentration of the epitaxial layer of surface growth.
As the preferred embodiment of the present embodiment, the preparation facilities of the epitaxial layer can also include admission line 103, setting
In the top of the reaction chamber 100, the air inlet 101 of one end of the admission line 103 and the reaction chamber 100 connects
It connects, the other end is connect with external air source.Required gas is passed through the reaction chamber by the admission line 103 by external air source
100, it is passed through air inlet shower 300 via air inlet 101, then warm table is branched to by multiple shuntings outlet 302 of air inlet shower 300
200 tops, so as to be sufficiently mixed reaction gas and impurity gas, after uniform divided flows, vertical blows to 700 table of substrate
Face.The monitoring window 401 of light wave monitoring system 400 can be set on the inner wall of the admission line 103, be allowed to via
The air inlet 101 is opposite at least one described shunting outlet 302 of the air inlet shower 300, thus detectable by described
700 surface of substrate passes through shunting outlet 302 and the light wave of air inlet 101 of the air inlet shower 300, as shown in Fig. 2 block arrow.
In other embodiments of the invention, the monitoring window 401 of the light wave monitoring system 400 also can be set suitable at other
Position detects the infrared spectroscopy of the substrate 700 by devices such as optical paths.
Specifically, the preparation facilities of the epitaxial layer can also include doping concentration control system 500 and gas flow control
Device 600 processed；The doping concentration control system 500 is connect with light wave monitoring system 400, obtains the light wave monitoring system
400 monitoring data control the gas flow controller 600 according to the doping concentration of the epitaxial layer of growth, with control
It is passed through the dopant gas flow of the reaction chamber 100；The gas flow controller 600 is controlled according to the doping concentration
The instruction of system controls the flow of corresponding impurity gas.The gas flow controller 600 can be mass flow controller.
Specifically, the warm table 200 can be using the graphite heating platform with SiC coating.The air inlet shower 300 can
Using the graphite shower with SiC coating.Temperature monitor 201 can be set at the warm table 200, be convenient for temperature
Control.
In order to prepare SiC epitaxial layer, the substrate can use SiC wafer, diameter can for 100mm, 150mm or
200mm, naturally it is also possible to be other suitable sizes, SiC crystal answers zero defect.
In conclusion reaction gas and impurity gas are vertically blowed to SiC substrate surface by the present invention, and utilize air inlet shower
Uniform divided flows are carried out to the reaction gas and impurity gas being passed through, so as to obtain the thickness uniformity on the SiC substrate surface
And the higher SiC epitaxial layer of doping concentration uniformity.System real-time monitoring is monitored using light wave, utilizes Fourier transform infrared
The doping concentration for the SiC epitaxial layer that spectra methods (FT-IR) accurate perception is growing, and feed back to doping concentration control system
System and gas flow controller, so that the automatic control to dopant gas flow can be realized.Therefore, outside using SiC of the invention
The uniformity of epitaxy layer thickness and doping concentration can be improved in the preparation method and device of prolonging layer, realizes to the accurate of doping concentration
Control, to can get high yield, high performance SiC epitaxial layer.
So the present invention effectively overcomes various shortcoming in the prior art and has high industrial utilization value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (15)
1. a kind of preparation method of SiC epitaxial layer, which is characterized in that the described method comprises the following steps:
One SiC substrate is provided, and the SiC substrate is put into a reaction chamber；
It is passed through reaction gas and impurity gas to the reaction chamber, the reaction gas and impurity gas is made to blow to the SiC
Substrate surface, and the airflow direction of the reaction gas and impurity gas is perpendicular to the SiC substrate surface；
The SiC substrate is heated, SiC epitaxial layer is grown on the SiC substrate surface using chemical vapour deposition technique；
Using the doping concentration for the SiC epitaxial layer that light wave monitoring system monitoring is growing, and according to the doping monitored
The gas flow for the impurity gas that concentration control is passed through.
2. the preparation method of SiC epitaxial layer according to claim 1, it is characterised in that: the reaction gas is SiH2Cl2、
C3H8And H2。
3. the preparation method of SiC epitaxial layer according to claim 1, it is characterised in that: when growing the SiC epitaxial layer,
The air pressure of the reaction chamber is 0.4-0.6torr.
4. the preparation method of SiC epitaxial layer according to claim 1, it is characterised in that: when growing the SiC epitaxial layer,
The SiC substrate is heated to 1400-1600 DEG C.
5. the preparation method of SiC epitaxial layer according to claim 1, it is characterised in that: the impurity gas is gas containing N
Body, gas containing Al or gas containing B.
6. a kind of preparation facilities of epitaxial layer characterized by comprising
Reaction chamber is equipped with air inlet at the top of the reaction chamber, is equipped with vaccum exhaust outlet in the reaction chamber bottom；
Warm table is set in the reaction chamber, for carrying and heating substrate；
There is air inlet shower an entrance and multiple shuntings to export, at the top of the entrance of the air inlet shower and the reaction chamber
Air inlet connection, multiple shuntings outlet of the air inlet shower is set to above the warm table；
Light wave monitors system, is set to the top of the reaction chamber, detects the shunting outlet across the air inlet shower and institute
The light wave of air inlet is stated, to monitor the doping concentration of the epitaxial layer of the substrate surface growth.
7. the preparation facilities of epitaxial layer according to claim 6, it is characterised in that: the multiple of air inlet shower distribute
Mouth is uniformly distributed, and makes the gas being passed through uniform divided flows above the warm table, and vertically blow to the substrate.
8. the preparation facilities of epitaxial layer according to claim 6, it is characterised in that: the light wave monitoring system is using in Fu
Leaf transformation infrared spectroscopy monitors the doping concentration of the epitaxial layer of the substrate surface growth.
9. the preparation facilities of epitaxial layer according to claim 6, it is characterised in that: the preparation facilities of the epitaxial layer also wraps
Admission line is included, the top of the reaction chamber, the air inlet company of described admission line one end and the reaction chamber are set to
It connects, the other end is connect with external air source.
10. the preparation facilities of epitaxial layer according to claim 9, it is characterised in that: the monitoring of the light wave monitoring system
Window is set on the inner wall of the admission line, is allowed to via described at least one of the air inlet and the air inlet shower
It is opposite to shunt outlet.
11. the preparation facilities of epitaxial layer according to claim 6, it is characterised in that: the preparation facilities of the epitaxial layer is also
Including doping concentration control system and gas flow controller；The doping concentration control system and light wave monitoring system connect
It connects, obtains the monitoring data of the light wave monitoring system, the gas is controlled according to the doping concentration of the epitaxial layer of growth
Flow controller, to control the dopant gas flow for being passed through the reaction chamber；The gas flow controller is mixed according to
The instruction of miscellaneous concentration control system controls the flow of corresponding impurity gas.
12. the preparation facilities of epitaxial layer according to claim 6, it is characterised in that: the warm table uses, and there is SiC to apply
The graphite heating platform of layer.
13. the preparation facilities of epitaxial layer according to claim 6, it is characterised in that: the air inlet shower, which uses, has SiC
The graphite shower of coating.
14. the preparation facilities of epitaxial layer according to claim 6, it is characterised in that: be provided with temperature at the warm table
Spend monitor.
15. the preparation facilities of epitaxial layer according to claim 6, it is characterised in that: the substrate is SiC wafer, diameter
For 100mm, 150mm or 200mm.
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| CN201710911736.8A CN109576784A (en) | 2017-09-29 | 2017-09-29 | A kind of preparation method and device of SiC epitaxial layer |
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| CN201710911736.8A CN109576784A (en) | 2017-09-29 | 2017-09-29 | A kind of preparation method and device of SiC epitaxial layer |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111058091A (en) * | 2019-12-30 | 2020-04-24 | 瀚天天成电子科技（厦门）有限公司 | T-shaped epitaxial furnace structure |
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