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CN109572170A - A kind of solar battery substep printing technology halftone - Google Patents

A kind of solar battery substep printing technology halftone Download PDF

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Publication number
CN109572170A
CN109572170A CN201710905058.4A CN201710905058A CN109572170A CN 109572170 A CN109572170 A CN 109572170A CN 201710905058 A CN201710905058 A CN 201710905058A CN 109572170 A CN109572170 A CN 109572170A
Authority
CN
China
Prior art keywords
halftone
grid
main
aperture plate
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN201710905058.4A
Other languages
Chinese (zh)
Inventor
刘建平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangsu Tianyuan Solar Power Co Ltd
Original Assignee
Jiangsu Tianyuan Solar Power Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangsu Tianyuan Solar Power Co Ltd filed Critical Jiangsu Tianyuan Solar Power Co Ltd
Priority to CN201710905058.4A priority Critical patent/CN109572170A/en
Publication of CN109572170A publication Critical patent/CN109572170A/en
Withdrawn legal-status Critical Current

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41FPRINTING MACHINES OR PRESSES
    • B41F15/00Screen printers
    • B41F15/14Details
    • B41F15/34Screens, Frames; Holders therefor
    • B41F15/36Screens, Frames; Holders therefor flat

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The present invention relates to a kind of solar battery substep printing technology halftones, including main grid halftone and secondary aperture plate version, main gate line is corresponding on the main grid halftone, secondary grid line is corresponding in the secondary aperture plate version, the width of secondary grid line is gradually widened at main gate line corresponding position edge certain distance L on the main grid halftone in the pair aperture plate version, is reaching maximum with main grid line position overlapping width.The present invention avoids the corresponding main grid position of pair aperture plate version in silicon solar cell substep printing process from disconnected grid problem occur, to improve the collection efficiency of electric current.

Description

A kind of solar battery substep printing technology halftone
Technical field
The present invention relates to manufacture of solar cells manufacturing fields, specifically disclose a kind of solar battery substep printing technology use Halftone.
Background technique
With the continuous mature and progress of solar battery technology, cost is increasingly becoming battery process optimization and new technology is opened Hair first has to consider the problems of;Main grid and secondary grid are split on two pieces of halftones by design using substep printing technology at present, led to It crosses main grid and substantially reduces manufacturing cost using different silver pastes and reduction silver paste unit consumption from secondary grid.Existing substep printing screen plate design It is only that main grid and secondary grid are simply split into design on two pieces of halftones, does not consider after first printing main grid, the master on cell piece Gate figure is to the subsequent influence for printing secondary aperture plate version.Main gate line is first printed on silicon wafer, the height one of main gate line silver paste after drying As between 5 ~ 10 microns, a difference in height (as shown in Figure 2) is formd between substrate.When secondary grid line republishes on silicon wafer When, due to there is the presence of this difference in height, halftone, because being squeezed and deformed, leads to the secondary grid line shape after printing in main gate line edge Become, height is all reduced with width, causes thin grid overlapped that place disconnects with main gate line when serious, to affect secondary grid line pair The collection (as shown in figure 4, being disconnected grid in circle) of electric current.When disconnected grid are more, the photoelectric conversion efficiency of cell piece is reduced, to make At loss.The secondary grid line not disconnected even, there is also the risks of reliability in the long-term use process of component.
Summary of the invention
Goal of the invention of the invention is: one kind can effectively avoid battery production substep and print to solve the above problem Occurs the solar battery substep printing technology halftone of disconnected grid problem in the process.
The technical scheme adopted by the invention is that such:
A kind of solar battery substep printing technology halftone, including main grid halftone and secondary aperture plate version, on the main grid halftone It is corresponding with main gate line, secondary grid line is corresponding in the secondary aperture plate version, the width of secondary grid line is apart from institute in the pair aperture plate version It states and is gradually widened at main gate line corresponding position edge certain distance L on main grid halftone, reached with main grid line position overlapping width To maximum.
Further, the width of secondary grid line main grid line position on the corresponding main grid halftone of distance in the secondary aperture plate version Edge L is to be gradually widened at 0.5 ~ 2mm.
Further, the width of secondary grid line is reaching maximum with main grid line position overlapping width in the secondary aperture plate version, The amplitude that broadens is the 10 ~ 100% of secondary grid line developed width.
In conclusion due to the adoption of the above technical scheme, the beneficial effects of the present invention are:
The present invention corresponds to the line width near main grid position by modifying secondary aperture plate version, by being gradually increased the region on secondary grid The line width of secondary grid reduces influence of the main grid paste for secondary aperture plate version, to reduce main grid position to increase the strike through in the region The problem of nearby disconnecting because of grid line secondary caused by the drop between main gate line and substrate is set, does not influence collection of the secondary grid line to electric current.
Detailed description of the invention
Fig. 1 is secondary grid line distributed architecture figure in the secondary aperture plate version of the present invention;
Fig. 2 is distribution sectional view of the main gate line of the present invention on silicon wafer;
Fig. 3 is the present invention for printing actual effect figure step by step;
Fig. 4 is that existing halftone is used for substep printing effect figure.
Marked in the figure: 1, secondary aperture plate version;11, secondary grid line;2, main gate line;3, silicon wafer.
Specific embodiment
The present invention is described in further detail below in conjunction with the accompanying drawings.
As shown in Fig. 1 ~ 3, a kind of solar battery substep printing technology halftone, including main grid halftone and secondary aperture plate version 1, It is corresponding with main gate line 2 on the main grid halftone, is corresponding with secondary grid line 11 in the secondary aperture plate version 1, in the pair aperture plate version 1 The width of secondary grid line 11 on the main grid halftone 2 corresponding position edge of main gate line (at two in Fig. 1 dotted line position be main grid Line edge) it is gradually widened at certain distance L, reaching maximum with 2 position overlapping width of main gate line.
The width of secondary grid line 11 2 position edge L of main gate line on the corresponding main grid halftone of distance in the pair aperture plate version 1 To be gradually widened at 1mm, reaching maximum with 2 position overlapping width of main gate line, the amplitude that broadens is 11 developed width of secondary grid line 10 ~ 100%, the amplitude to broaden is different because of the height of actual secondary 11 width of grid line, the severity of disconnected grid and main gate line 2 And it is varied.When disconnected grid ratio is more serious, the ratio to broaden suitably increases, and when the height of main gate line 2 is higher, widens Ratio must also increase.
The present invention corresponds to the line width near main grid position by modifying secondary aperture plate version, thus increase the strike through in the region, from And reduce the problem of disconnecting near main grid position because of grid line secondary caused by the drop between main gate line and substrate (as shown in Figure 3).
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.

Claims (3)

1. a kind of solar battery substep printing technology halftone, including main grid halftone and secondary aperture plate version, in the main grid halftone On be corresponding with main gate line, be corresponding with secondary grid line in the secondary aperture plate version, it is characterised in that: secondary grid line in the pair aperture plate version Width is gradually widened at main gate line corresponding position edge certain distance L on the main grid halftone, with main grid line position Overlapping width reaches maximum.
2. a kind of solar battery substep printing technology halftone according to claim 1, it is characterised in that: the pair grid The width of secondary grid line main grid line position edge L on the corresponding main grid halftone of distance is to be gradually widened at 0.5 ~ 2mm on halftone.
3. a kind of solar battery substep printing technology halftone according to claim 1, it is characterised in that: the pair grid The width of secondary grid line is reaching maximum with main grid line position overlapping width on halftone, and the amplitude that broadens is secondary grid line developed width 10~100%。
CN201710905058.4A 2017-09-29 2017-09-29 A kind of solar battery substep printing technology halftone Withdrawn CN109572170A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710905058.4A CN109572170A (en) 2017-09-29 2017-09-29 A kind of solar battery substep printing technology halftone

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710905058.4A CN109572170A (en) 2017-09-29 2017-09-29 A kind of solar battery substep printing technology halftone

Publications (1)

Publication Number Publication Date
CN109572170A true CN109572170A (en) 2019-04-05

Family

ID=65914012

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710905058.4A Withdrawn CN109572170A (en) 2017-09-29 2017-09-29 A kind of solar battery substep printing technology halftone

Country Status (1)

Country Link
CN (1) CN109572170A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111098587A (en) * 2019-12-30 2020-05-05 晋能光伏技术有限责任公司 A kind of printing screen for heterojunction solar cell and printing method thereof
CN111114108A (en) * 2020-01-06 2020-05-08 江西展宇新能源股份有限公司 A solar cell front electrode screen
CN115972748A (en) * 2022-10-22 2023-04-18 徐州智兴电子科技有限公司 Screen printing plate
CN116061548A (en) * 2022-11-29 2023-05-05 徐州智兴电子科技有限公司 Composite screen printing plate
WO2024146054A1 (en) * 2023-01-05 2024-07-11 浙江晶科能源有限公司 Solar cell stencil, solar cell, and photovoltaic module
EP4421882A4 (en) * 2023-01-05 2024-10-30 Zhejiang Jinko Solar Co., Ltd. Solar cell stencil, solar cell, and photovoltaic module

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111098587A (en) * 2019-12-30 2020-05-05 晋能光伏技术有限责任公司 A kind of printing screen for heterojunction solar cell and printing method thereof
CN111114108A (en) * 2020-01-06 2020-05-08 江西展宇新能源股份有限公司 A solar cell front electrode screen
CN115972748A (en) * 2022-10-22 2023-04-18 徐州智兴电子科技有限公司 Screen printing plate
CN116061548A (en) * 2022-11-29 2023-05-05 徐州智兴电子科技有限公司 Composite screen printing plate
WO2024146054A1 (en) * 2023-01-05 2024-07-11 浙江晶科能源有限公司 Solar cell stencil, solar cell, and photovoltaic module
EP4421882A4 (en) * 2023-01-05 2024-10-30 Zhejiang Jinko Solar Co., Ltd. Solar cell stencil, solar cell, and photovoltaic module

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WW01 Invention patent application withdrawn after publication

Application publication date: 20190405

WW01 Invention patent application withdrawn after publication