CN109564488B - Conductive film and touch panel - Google Patents
Conductive film and touch panel Download PDFInfo
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- CN109564488B CN109564488B CN201780050035.8A CN201780050035A CN109564488B CN 109564488 B CN109564488 B CN 109564488B CN 201780050035 A CN201780050035 A CN 201780050035A CN 109564488 B CN109564488 B CN 109564488B
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- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 description 1
- 235000019345 sodium thiosulphate Nutrition 0.000 description 1
- FFMXSUAKCKRJHK-UHFFFAOYSA-M sodium;sulfonatosulfanylbenzene Chemical compound [Na+].[O-]S(=O)(=O)SC1=CC=CC=C1 FFMXSUAKCKRJHK-UHFFFAOYSA-M 0.000 description 1
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- XOGGUFAVLNCTRS-UHFFFAOYSA-N tetrapotassium;iron(2+);hexacyanide Chemical compound [K+].[K+].[K+].[K+].[Fe+2].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] XOGGUFAVLNCTRS-UHFFFAOYSA-N 0.000 description 1
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- NZKWZUOYGAKOQC-UHFFFAOYSA-H tripotassium;hexachloroiridium(3-) Chemical compound [Cl-].[Cl-].[Cl-].[Cl-].[Cl-].[Cl-].[K+].[K+].[K+].[Ir+3] NZKWZUOYGAKOQC-UHFFFAOYSA-H 0.000 description 1
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Images
Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/047—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means using sets of wires, e.g. crossed wires
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
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- G—PHYSICS
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- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
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- G—PHYSICS
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- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04112—Electrode mesh in capacitive digitiser: electrode for touch sensing is formed of a mesh of very fine, normally metallic, interconnected lines that are almost invisible to see. This provides a quite large but transparent electrode surface, without need for ITO or similar transparent conductive material
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Position Input By Displaying (AREA)
- Non-Insulated Conductors (AREA)
Abstract
The invention provides a conductive thin film which can improve the image quality of a display image and reduce the resistance of a detection part at the same time, and a touch panel with the conductive thin film. The conductive thin film is provided on a display unit of the display device. Comprising: a transparent substrate; a detection unit provided on at least one surface of the transparent substrate and having a mesh pattern formed of fine metal wires; and a peripheral wiring portion disposed on at least one surface of the transparent substrate and electrically connected to the detection portion. In the transparent substrate, when the region provided with the detection portion is the 1 st region and the region other than the 1 st region is the 2 nd region, a boundary region including a boundary line between the 1 st region and the 2 nd region is located over the entire boundary line, and a line width change region is provided in at least a part of the entire boundary line of the boundary region. In the line width variation region, the line width of the thin metal line of the detection portion is larger than the reference line width of the thin metal line at the center of the 1 st region, and continuously increases in the direction from the 1 st region to the 2 nd region.
Description
Technical Field
The present invention relates to a touch panel provided on a display unit of a display device and including a conductive thin film and the conductive thin film, and more particularly, to a conductive thin film and a touch panel including the conductive thin film, which can achieve both high image quality of a display image and low resistance of a detection portion.
Background
In recent years, in various electronic devices represented by portable information devices such as tablet personal computers and smart phones, touch panels that can be used in combination with a display device such as a liquid crystal display device and that perform input operations on the electronic devices by making contact with a screen have become widespread.
For the touch panel, a conductive thin film in which a detection portion for detecting contact is formed on a transparent substrate can be used.
The detecting part is formed of a transparent conductive Oxide such as ITO (Indium Tin Oxide), but is also formed of a metal other than the transparent conductive Oxide. Since metals have advantages such as easy patterning, excellent flexibility, and low resistance compared to the transparent conductive oxides, metals such as copper and silver are used for conductive thin lines in touch panels and the like.
Patent document 1 describes a touch panel using a thin metal wire. The touch panel of patent document 1 is an electrostatic capacitance sensor including a base material, a plurality of Y electrode patterns, a plurality of X electrode patterns, a plurality of bridging insulating layers, a plurality of bridging wirings, and a transparent insulating layer. Each of the plurality of Y electrode patterns has a substantially rhombic shape, and is arranged in a matrix shape on the surface of the base material along the X direction and the Y direction such that the apexes thereof face each other. The plurality of X electrode patterns are substantially diamond-shaped like the Y electrode patterns. The X electrode pattern and the Y electrode pattern of patent document 1 are rhombic lattice patterns.
The conductive thin film used for the touch sensor is generally a diamond-shaped grid pattern formed of 2 kinds of equally spaced parallel lines, as in the substantially diamond-shaped pattern of patent document 1.
Prior art documents
Patent document
Patent document 1: japanese patent laid-open No. 2014-115694
Disclosure of Invention
Technical problem to be solved by the invention
In recent years, there have been problems in touch sensors that are adapted to a narrow frame, a large screen, and a high image quality. In order to cope with the narrowing of the frame, it is required to reduce the size of the line space ratio of the peripheral wiring. When the Line Space ratio (Line and Space) is reduced, the wiring volume is reduced, and thus the resistance value of the peripheral wiring is increased.
In the case where the touch sensor has a mesh pattern formed of thin lines, the length of the mesh pattern formed of thin lines is required to be long in order to cope with a large screen, and as a result, the resistance value of the entire mesh pattern increases. In order to cope with the high image quality, the fine lines of the mesh pattern are made difficult to be visually recognized, but the fine lines of the mesh pattern reduce the cross-sectional area of the lead wire, and the resistance value of the metal mesh sensor increases. However, in order to keep the response speed of the touch sensor within a constant range, it is necessary to prevent the metal mesh sensor from becoming high in resistance.
In this way, in order to cope with the narrow frame, the large screen, and the high image quality, it is necessary to prevent the metal mesh sensor from increasing in resistance. Patent document 1 has a problem that the resistance value cannot be sufficiently reduced in order to achieve both the high image quality and the low resistance of the metal mesh sensor.
An object of the present invention is to provide a conductive thin film that solves the above-described problems of the prior art and can achieve both high image quality of a display image and low resistance of a detection portion, and a touch panel including the conductive thin film.
Means for solving the technical problem
In order to achieve the above object, according to a 1 st aspect of the present invention, there is provided a conductive film provided on a display unit of a display device, the conductive film including: a transparent substrate; a detection unit provided on at least one surface of the transparent substrate and having a mesh pattern formed of fine metal wires; and a peripheral wiring portion provided on at least one surface of the transparent substrate and electrically connected to the detection portion, wherein in the transparent substrate, when a region where the detection portion is provided is a 1 st region and a region other than the 1 st region is a 2 nd region, a boundary region including a boundary line between the 1 st region and the 2 nd region is located over the entire boundary line, and a line width variation region is provided in at least a part of the entire boundary line of the boundary region, and in the line width variation region, a line width of the thin metal wire of the detection portion is larger than a reference line width of the thin metal wire at a center of the 1 st region and continuously increases in a direction from the 1 st region toward the 2 nd region.
The boundary region may be a region including the boundary line and crossing the 1 st region and the 2 nd region. The line width variation region may be an entire border region.
Preferably, the boundary region has a quadrangular shape, and the line width change region is located in a part of at least one side of the quadrangular shape.
Preferably, the detection unit has a plurality of detection electrodes, the peripheral wiring unit has a plurality of peripheral wirings, the plurality of detection electrodes are electrically connected to the plurality of peripheral wirings, respectively, and a line width change region is provided in a boundary region of the detection electrode having the longest length of the connected peripheral wiring among the plurality of detection electrodes. The detection unit may have a dummy electrode electrically insulated from the detection electrode.
When the increase rate of the wire width of the thin metal wire is Y, the reference wire width of the thin metal wire in the center of the 1 st region is W0, the thickest wire width of the thin metal wire in the 1 st region is Wmax, and the ratio of these is Wmax/W0, Y is preferably 2.0 or less, Wmax/W0 or less, 2.5 (Wmax/W0) or less, and Y is 4.77 (Wmax/W0) -4.19.
A 2 nd aspect of the present invention provides a touch panel including: the conductive thin film according to claim 1; a protective layer disposed on the conductive thin film and protecting the conductive thin film; and a display device having a display unit, wherein the 1 st region is stacked on the display region of the display unit, and the conductive thin film is disposed on the display device.
Effects of the invention
According to the present invention, both high image quality and low resistance can be achieved.
Drawings
Fig. 1 is a schematic view showing a display device including a conductive thin film according to an embodiment of the present invention.
Fig. 2 is a schematic plan view showing a touch sensor using a conductive thin film according to an embodiment of the present invention.
Fig. 3 is a schematic cross-sectional view showing a touch sensor using a conductive thin film according to an embodiment of the present invention.
Fig. 4 is a schematic cross-sectional view showing another example of the structure of the conductive thin film according to the embodiment of the present invention.
Fig. 5 is an enlarged view of a main portion of the conductive thin film according to the embodiment of the present invention.
Fig. 6 is a graph showing a preferable range of the line width of the conductive thin film according to the embodiment of the present invention.
Fig. 7 is a schematic plan view showing another example of the arrangement of the detection section of the conductive thin film according to the embodiment of the present invention.
Fig. 8 is a schematic view showing another example of the detection section of the conductive thin film according to the embodiment of the present invention.
Detailed Description
Hereinafter, the conductive film and the touch panel of the present invention will be described in detail based on preferred embodiments shown in the drawings.
In addition, "to" in the numerical range shown below includes numerical values described on both sides. For example, the numerical value α 1 to the numerical value β 1 of ∈ mean that the range of ∈ is a range including the numerical value α 1 and the numerical value β 1, and when expressed by a mathematical symbol, α 1 ≦ ε ≦ β 1.
Unless otherwise specified, the angles include the error ranges that are generally accepted in the technical field, including "parallel", "perpendicular", and "orthogonal".
Transparent means that the light transmittance is at least 60% or more, preferably 75% or more, more preferably 80% or more, and further preferably 85% or more in the visible light wavelength region of 400nm to 800nm in wavelength. The light transmittance was measured using JIS K7375: 2008, the total light transmittance and total light reflectance of the plastic.
Fig. 1 is a schematic view showing a display device including a conductive thin film according to an embodiment of the present invention.
As shown in fig. 1, the conductive film 10 is provided on a display unit 22 of a display device 20 via an optically transparent layer 18, for example.
A protective layer 12 is provided on the surface 10a of the conductive thin film 10. The conductive film 10 is connected to a controller 14.
The touch sensor 13 is constituted by the conductive thin film 10 and the protective layer 12, and the touch panel 16 is constituted by the conductive thin film 10, the protective layer 12, and the controller 14. The touch panel 16 and the display device 20 constitute a display apparatus 24.
The surface 12a of the protective layer 12 serves as a viewing surface for a display object displayed in a display area (not shown) of the display unit 22. The surface 12a of the protective layer 12 serves as a touch surface of the touch panel 16.
The controller 14 is formed of a known member used for detection of a capacitance type touch sensor or a resistance film type touch sensor. In the touch sensor 13, in the case of the capacitance type, a position where the capacitance changes due to contact of a finger or the like with the surface 12a of the protective layer 12 is detected by the controller 14. In the case of the resistive film type, the controller 14 detects the position where the resistance changes.
The protective layer 12 is used to protect the conductive thin film 10. The structure of the protective layer 12 is not particularly limited. For example, an acrylic resin such as glass, Polycarbonate (PC), polyethylene terephthalate (PET), or polymethyl methacrylate (PMMA) can be used. As described above, since the surface 12a of the protective layer 12 serves as a touch surface, a hard coat layer may be provided on the surface 12a as necessary.
The optically transparent layer 18 is not particularly limited in structure as long as it is optically transparent and insulating, and can stably fix the conductive thin film 10. As the optically transparent layer 18, for example, optically transparent Resin (OCR) such as Optically Clear Adhesive (OCA) and UV (ultraviolet) curable Resin can be used. Also, the optically transparent layer 18 may be partially hollow.
In addition, the optical transparent layer 18 may not be provided, and the conductive film 10 may be provided on the display unit 22 with a gap therebetween. This gap is also referred to as an air gap.
The display device 20 includes a display unit 22 having a display region (not shown), and is, for example, a liquid crystal display device. In this case, the display unit 22 is a liquid crystal display unit. The display device is not limited to a liquid crystal display device, and may be an Organic EL (Organic electro luminescence) display device, in which case the display unit is an Organic EL element.
The conductive thin film 10 is used in, for example, a capacitance type touch sensor.
FIG. 2 is a schematic plan view showing a touch sensor using a conductive thin film according to an embodiment of the present invention,
fig. 3 is a schematic cross-sectional view showing a touch sensor using a conductive thin film according to an embodiment of the present invention.
The conductive thin film 10 has: a transparent substrate; a detection unit provided on at least one surface of the transparent substrate and having a mesh pattern formed of fine metal wires; and a peripheral wiring portion disposed on at least one surface of the transparent substrate and electrically connected to the detection portion.
Specifically, as shown in fig. 2, a plurality of 1 st detection electrodes 32 extending in the 1 st direction D1 and arranged side by side in the 2 nd direction D2 orthogonal to the 1 st direction D1 are formed on the surface 30a of the transparent substrate 30, and a plurality of 1 st peripheral wirings 33 electrically connected to the plurality of 1 st detection electrodes 32 are arranged close to each other. The 1 st peripheral wiring lines 33 are collected to 1 terminal 39 on one side 30c of the transparent substrate 30. The 1 st peripheral wiring 33 is collectively referred to as a 1 st peripheral wiring section 50.
A plurality of 2 nd detection electrodes 34 extending in the 2 nd direction D2 and arranged side by side in the 1 st direction D1 are formed on the back surface 30b (refer to fig. 3) of the transparent substrate 30, and a plurality of 2 nd peripheral wirings 35 electrically connected to the plurality of 2 nd detection electrodes 34 are arranged close to each other. The plurality of 2 nd peripheral wirings 35 are collected to 1 terminal 39 on one side 30c of the transparent substrate 30. The plurality of 2 nd peripheral wirings 35 are collectively referred to as a 2 nd peripheral wiring portion 52.
The 2 nd detection electrode 34 is disposed in a layered manner so as to overlap at least a part of the 1 st detection electrode 32. More specifically, the 2 nd detection electrode 34 and the 1 st detection electrode 32 are disposed so as to overlap at least a part thereof when viewed from a direction Dn (see fig. 3 and 4) perpendicular to one surface of the transparent substrate 30. The stacking direction D3 (see fig. 3 and 4) in which the 1 st detection electrode 32 and the 2 nd detection electrode 34 are stacked is the same direction as the perpendicular direction Dn (see fig. 3 and 4).
As shown in fig. 2 and 3, by providing the 1 st detection electrode 32 on the front surface 30a and the 2 nd detection electrode 34 on the rear surface 30b of the 1 transparent substrate 30, even if the transparent substrate 30 contracts, the positional relationship between the 1 st detection electrode 32 and the 2 nd detection electrode 34 can be reduced.
The 1 st detection electrode 32 and the plurality of 2 nd detection electrodes 34 constitute a detection unit 53.
The 1 st detection electrode 32 and the 2 nd detection electrode 34 are each constituted by a thin metal wire 40 and have a mesh pattern having openings. The mesh patterns of the 1 st detection electrode 32 and the 2 nd detection electrode 34 will be described in detail later.
The 1 st peripheral wiring 33 and the 2 nd peripheral wiring 35 may be formed of the fine metal wire 40, or may be formed of conductive wirings having a different line width, thickness, or the like from the fine metal wire 40. The 1 st peripheral wiring 33 and the 2 nd peripheral wiring 35 may be formed of, for example, a strip conductor. The respective components of the conductive thin film 10 will be described in detail later.
As described above, when the conductive thin film 10 has a mesh pattern formed of the fine metal wires 40, the conductive thin film is not limited to the capacitance type touch sensor, and may be a resistance film type touch sensor. Even in the resistive film type touch sensor, the detection unit 53 may be configured by the plurality of 1 st detection electrodes 32 and the plurality of 2 nd detection electrodes 34.
In the transparent substrate 30 of the conductive thin film 10, the 1 st region 36 is a region where the detection unit 53 is provided, and includes a region where the plurality of 1 st detection electrodes 32 and the plurality of 2 nd detection electrodes 34 are present. In the capacitive touch sensor, the 1 st region 36 is a region in which a touch, i.e., a contact of a finger or the like, can be detected. The 1 st region 36 is stacked on the display region of the display unit 22 of the display device 20, and the conductive thin film 10 is disposed on the display device 20. Thus, the 1 st region 36 is also a visible region. When an image is displayed in the display area, the 1 st area 36 becomes an image display area.
In the transparent substrate 30, the region other than the 1 st region 36 is set as the 2 nd region 38. The 1 st peripheral wiring portion 50 and the 2 nd peripheral wiring portion 52 are formed in the 2 nd region 38, and a decorative plate 54 having a light shielding function is provided on the 2 nd region 38. By covering the 1 st peripheral wiring portion 50 and the 2 nd peripheral wiring portion 52 with the decorative plate 54, the 1 st peripheral wiring portion 50 and the 2 nd peripheral wiring portion 52 are made invisible, and the 1 st region 36 which is a visible region is divided. The reference numeral 37 denotes a boundary between the 1 st region 36 and the 2 nd region 38.
In the field of touch panel technology, the decorative sheet 54 is referred to as a decorative layer. The configuration of the decorative sheet 54 is not particularly limited as long as the 1 st peripheral wiring portion 50 and the 2 nd peripheral wiring portion 52 can be made invisible, and a known decorative layer can be used. For forming the decorative sheet 54, printing methods such as screen printing, gravure printing, and offset printing, transfer methods, and vapor deposition methods can be used.
The invisible state means that the 1 st peripheral wiring portion 50 and the 2 nd peripheral wiring portion 52 are invisible, and when 10 observers observe them, the invisible state means that no one can visually recognize them.
The conductive thin film 10 is not particularly limited to the configuration shown in fig. 2 and 3, and may be configured such that 1 detection electrode is provided on 1 transparent substrate 30, 31 as in the conductive thin film 10 shown in fig. 4, for example. The conductive film 10 may have the following structure: the 1 st detection electrode 32 is provided on the front surface 30a of the 1 st transparent substrate 30, and the transparent substrate 31 having the 2 nd detection electrode 34 provided on the front surface 31a is laminated on the back surface 30b of the transparent substrate 30 via the adhesive layer 56. The transparent substrate 31 has the same structure as the transparent substrate 30. The adhesive layer 56 can be the same as the optically transparent layer 18 described above. In fig. 4, the stacking direction D3 in which the 1 st detection electrode 32 and the 2 nd detection electrode 34 are stacked is also the same direction as the vertical direction Dn.
In the transparent substrate 30 of the conductive thin film 10, as shown in fig. 5, the boundary region Db including the boundary line 37 between the 1 st region 36 and the 2 nd region 38 in the 1 st region 36 is located over the entire boundary line 37 along the boundary line 37. The boundary region Db is, for example, a region including the boundary line 37 and spanning the 1 st region 36 and the 2 nd region 38. In FIG. 5, of the 1 st detection electrode 32 and the 1 st peripheral wiring 33Electrode boundary BEThe range up to the boundary Bc on the 1 st region 36 side is a boundary region Db.
A range from the boundary line 37 to about 2cm in a direction perpendicular to the boundary line 37 is a boundary region Db. That is, the distance between the boundary line 37 and the boundary Bc is about 2 cm.
The boundary Db may be a range from the boundary 37 to the boundary Bc on the 1 st region 36 side, and in this case, the boundary Db exists only in the 1 st region 36.
At least a part of the entire boundary line 37 of the boundary region Db has a line width change region Dc.
In the line width change region Dc of the boundary region Db, the line width of the thin metal wire 40 of the 1 st detection electrode 32 and the line width of the thin metal wire 40 of the 2 nd detection electrode 34 existing in the line width change region Dc are larger than the reference line width of the thin metal wire 40 in the center of the 1 st region 36, and continuously increase in the direction from the 1 st region 36 to the 2 nd region 38. By continuously increasing the line width w of the fine metal wire 40, the 1 st detection electrode 32 and the 2 nd detection electrode 34, that is, the detection portion 53 can be made low in resistance. In this case, the increase in resistivity associated with the thinning of the fine metal wire 40 can be suppressed. Further, by reducing the resistance, the response speed of the touch sensor can be easily maintained within a constant range even if the screen size of the display area is increased.
As described above, since the thin metal wire 40 is thick in the boundary region Db by continuously increasing the line width w of the thin metal wire 40 in the line width variation region Dc of the boundary region Db, the thin metal wire 40 is less likely to be broken as the thin metal wire 40 is thicker, and the resistance to breakage is improved. Further, the resistance to the inflow of an overcurrent due to static electricity is improved as the line width w of the thin metal wire 40 is larger, and as a result, the antistatic property is improved.
As described above, by limiting the region in which the line width w of the thin metal wire 40 is continuously increased to the line width change region Dc of the boundary region Db, it is difficult for the observer to visually recognize the region, and an effect that a substantial image quality degradation cannot be recognized can be obtained. That is, the influence on the display region of the thin metal wire 40, for example, the influence on the image quality of the display image can be reduced.
The center of the 1 st region 36 is an intersection where 2 diagonal lines intersect if the 1 st region 36 is rectangular, square, or the like, and is a center if the 1 st region 36 is circular.
The continuous increase in the line width of the fine metal wire 40 means that the line width of the fine metal wire 40 becomes wider than the line width rearward in the extending direction as the fine metal wire 40 extends in the extending direction.
The continuously increasing further includes increasing the line width of the fine metallic wire 40 in multiple stages in the extending direction of the fine metallic wire 40.
Next, a preferable range of the line width of the thin metal wire 40 in the line width variation region Dc of the conductive thin film 10 will be described.
Fig. 6 is a graph showing a preferable range of the line width of the conductive thin film according to the embodiment of the present invention.
The rate of increase in the line width of the thin metal wire 40 is Y, the reference line width of the thin metal wire 40 in the center of the 1 st region 36 is W0, the thickest line width of the thin metal wire 40 in the 1 st region 36 is Wmax, and the ratio of these is Wmax/W0. The increase rate Y represents the amount of increase in the width of the thin metal wire per unit length. The unit length is 1 cm.
The line widths of the thin metal wires 40 in the line width variation region Dc preferably satisfy the following expressions (1) to (4) at the same time. Fig. 6 is a graph showing the following formulas (1) to (4). In fig. 6, a straight line L1 corresponds to the following formula (1), a straight line L2 corresponds to the following formula (2), a straight line L3 corresponds to the following formula (3), and a straight line L4 corresponds to the following formula (4). Satisfying the following expressions (1) to (4) together means that the reference line width W0 and the thickest line width Wmax of the thin metal wire 40 in the center of the 1 st region 36 are within the region S shown in fig. 6.
Y is less than or equal to 2.0 … … formula (1)
Wmax/W0 ≤ 2.5 … … formula (2)
Y … … formula (3) of 0.5X (Wmax/W0) ≦ Y … …
Y is not more than 4.77X (Wmax/W0) -4.19 … … formula (4)
By satisfying the above expressions (1) to (4) at the same time, the thin metal wires 40 are less visible and the resistance can be reduced. In this case, if the line width of the fine metal wire 40 can be increased from the reference line width by 2.5 times and the increase rate is increased by 2 times, the fine metal wire 40 is further less visible and the resistance can be further reduced.
In order to make the thin metal wire 40 more difficult to visually recognize and to further reduce the resistance, it is preferable that the line width of the thin metal wire 40 be reduced when the increase rate is small as shown by a point C in fig. 6.
As described above, the boundary region Db is located along the boundary line 37 over the entire region of the boundary line 37. In fig. 2, the 1 st region 36 has a quadrangular shape, the boundary region Db also has a quadrangular shape, and the boundary region Db has 4 sides. The line-width change region Dc may be located in at least 1 part of the entire region of the boundary line 37, and is not limited to the entire region located in the boundary region Db. Therefore, the line-width variation region Dc may be provided on at least one of the 4 sides of the boundary region Db, or may be provided in a part of one side.
In view of the reduction in resistance, the line width change region Dc may be provided in the boundary region Db at a high resistance. In this case, since the lengths of the plurality of detection electrodes are the same and the resistances of the detection electrodes are the same, the resistances of the detection electrodes are higher as the lengths of the peripheral wirings are longer. Therefore, the boundary region Db of the detection electrode having the longest length of the peripheral wiring may have the line width change region Dc.
Specifically, in fig. 2, the 1 st peripheral wiring 33 of the 1 st detection electrode 32a has the longest length among the 1 st detection electrodes 32. Therefore, the line width change region Dc can be provided in the boundary region Db of the 1 st detection electrode 32 a. The line width change region Dc may be located in the boundary region Db at both ends of the 1 st detection electrode 32a, and may be configured to be provided in the boundary region Db at either end of the 1 st detection electrode 32 a.
With respect to the plurality of 2 nd detection electrodes 34, the 2 nd peripheral wiring 35 of the 2 nd detection electrode 34a has the longest length. Therefore, the line width change region Dc can be provided in the boundary region Db of the 2 nd detection electrode 34 a. The line width change region Dc may be located in the boundary region Db at both ends of the 2 nd detection electrode 34a, and may be configured to be provided in the boundary region Db at either end of the 2 nd detection electrode 34 a.
In the conductive thin film 11 shown in fig. 7, the terminal 39 of the 1 st peripheral wiring 33 in which the 1 st detection electrodes 32 are collected is disposed in the center of the one side 30c in the 2 nd direction D2. In this case, the 1 st detection electrode 32a and the 1 st detection electrode 32b have the longest length of the 1 st peripheral wiring 33 among the plurality of 1 st detection electrodes 32. Therefore, the line width change region Dc can be provided in the boundary region Db between the 1 st detection electrode 32a and the 1 st detection electrode 32 b. The line width change region Dc may be present in the boundary region Db at both ends of the 1 st detection electrode 32a, and may be provided in the boundary region Db at either end of the 1 st detection electrode 32 a. The line width change region Dc may be located in the boundary region Db between both ends of the 1 st detection electrode 32b, and the line width change region Dc may be provided in the boundary region Db between both ends of the 1 st detection electrode 32 b.
In the conductive thin film 11 shown in fig. 7, the same components as those of the conductive thin film 10 shown in fig. 2 are denoted by the same reference numerals, and detailed description thereof will be omitted.
The detection unit may have a dummy electrode electrically insulated from the detection electrode. In this case, as shown in fig. 8, the dummy electrode 60 electrically insulated from the 1 st detection electrode 32 may be provided between the 1 st detection electrodes 32 in the 2 nd direction D2.
The 1 st detection electrode 32 and the dummy electrode 60 are disposed with a gap 62. The dummy electrode 60 is electrically insulated from the 1 st detection electrode 32 by the gap 62, and does not function as a detection electrode. However, in the case of having the dummy electrode 60, the line width variation area Dc is also set with respect to the boundary area Db where the dummy electrode 60 exists. The dummy electrode 60 is electrically insulated and therefore does not contribute to the resistance, but the dummy electrode 60 itself is difficult to be visually recognized, and the influence on the display area, that is, the influence on the image quality can be reduced.
The dummy electrode 60 is in the same grid pattern as the 1 st detection electrode 32 except that the dummy electrode 60 is electrically insulated from the 1 st detection electrode 32 by the gap 62. As for the dummy electrode 60, when the 1 st detection electrode 32 is fabricated after the grid pattern is fabricated, it can be formed by removing only the gap 62 without removing all the grid patterns located between the 1 st detection electrodes 32.
In fig. 8, the 1 st detection electrode 32 is described as an example, but the 2 nd detection electrode 34 is also configured to be provided with the dummy electrode 60 as in the 1 st detection electrode 32.
Hereinafter, each member of the conductive thin film 10 will be described.
First, the thin metal wires 40 of the 1 st and 2 nd detection electrodes 32 and 34 will be described.
The line width w of the thin metal wire 40 is not particularly limited, but when used as the 1 st detection electrode 32 and the 2 nd detection electrode 34, is preferably 0.5 μm or more and 5 μm or less. When the line width w of the thin metal wire 40 is within the above range, the 1 st detection electrode 32 and the 2 nd detection electrode 34 having low resistance can be formed relatively easily. The line width w of the fine metal wire 40 is a line width of a region other than the line width variation region Dc, and the reference line width is preferably included in the range of the line width w of the fine metal wire 40.
When the thin metal wires 40 are used as peripheral wiring (lead-out wiring), the line width w of the thin metal wires 40 is preferably 500 μm or less, more preferably 50 μm or less, and particularly preferably 30 μm or less. If the line width w is in the above range, a peripheral wiring having a low resistance can be formed relatively easily.
When the thin metal wires 40 are used as the peripheral wiring, the thin metal wires may be formed in a mesh pattern in the same manner as the 1 st detection electrode 32 and the 2 nd detection electrode 34, and in this case, the line width w is not particularly limited, but is preferably 30 μm or less, more preferably 15 μm or less, further preferably 10 μm or less, particularly preferably 9 μm or less, most preferably 7 μm or less, and preferably 0.5 μm or more, and more preferably 1.0 μm or more. If the line width w is in the above range, a peripheral wiring having a low resistance can be formed relatively easily. When the 1 st detection electrode 32 and the 2 nd detection electrode 34 are formed by forming the peripheral wiring in a mesh pattern, uniformity of lowering of resistance due to irradiation of the detection electrodes and the peripheral wiring can be improved in the step of irradiating pulsed light from the xenon flash lamp. In addition, when the adhesive layer is bonded, the adhesive layer is preferably bonded in view of the fact that the peel strength between the 1 st detection electrode 32 and the 2 nd detection electrode 34 and the peripheral wiring can be made constant and the in-plane distribution of the peel strength can be reduced.
The thickness t of the thin metal wire 40 is not particularly limited, but is preferably 1 to 200 μm, more preferably 30 μm or less, further preferably 20 μm or less, particularly preferably 0.01 to 9 μm, and most preferably 0.05 to 5 μm. If the thickness t is in the above range, the detection electrode having low resistance and excellent durability can be formed relatively easily.
With respect to the line width w of the thin metal wire 40 and the thickness t of the thin metal wire 40, a sectional image of the conductive thin film 10 including the thin metal wire 40 is acquired, the sectional image is read into a personal computer and displayed on a display, 2 portions defining the line width w of the thin metal wire 40 on the display are plotted in horizontal lines, and the length between the horizontal lines is obtained. This can obtain the line width w of the thin metal wire 40. Then, horizontal lines are drawn for 2 portions defining the thickness t of the thin metal wire 40, and the length between the horizontal lines is determined. Thereby, the thickness t of the thin metal wire 40 can be obtained.
< transparent substrate >
Since the transparent substrate 30 is the same as the transparent substrate 31, only the transparent substrate 30 will be described. The type of the transparent substrate 30 is not particularly limited as long as it can support the 1 st detection electrode 32, the 1 st peripheral wiring 33, the 2 nd detection electrode 34, and the 2 nd peripheral wiring 35, but a plastic film is particularly preferable.
Specific examples of the material constituting the transparent substrate 30 include plastic films having a melting point of about 290 ℃ or less, such as PET (polyethylene terephthalate) (258 ℃), polycycloolefin (134 ℃), polycarbonate (250 ℃), acrylic resin (128 ℃), PEN (polyethylene naphthalate) (269 ℃), PE (polyethylene) (135 ℃), PP (polypropylene) (163 ℃), polystyrene (230 ℃), polyvinyl chloride (180 ℃), polyvinylidene chloride (212 ℃) and TAC (triacetyl cellulose) (290 ℃), and particularly preferably PET, polycycloolefin and polycarbonate.
() The numerical value in (b) is a melting point.
The total light transmittance of the transparent substrate 30 is preferably 85% to 100%. The total light transmittance is, for example, measured in accordance with JIS K7375: "determination of Plastic-Total light transmittance and Total light reflectance" specified in 2008.
As one of preferred embodiments of the transparent substrate 30, a treated substrate subjected to at least 1 treatment selected from the group consisting of an atmospheric pressure plasma treatment, a corona discharge treatment, and an ultraviolet irradiation treatment may be mentioned. By performing the above-described treatment, hydrophilic groups such as OH groups are introduced on the surface of the treated transparent substrate 30, and adhesion between the 1 st detection electrode 32, the 1 st peripheral wiring 33, the 2 nd detection electrode 34, and the 2 nd peripheral wiring 35 and the transparent substrate 30 is further improved.
Among the above-mentioned treatments, the atmospheric pressure plasma treatment is preferable in view of further improving the adhesion between the 1 st detection electrode 32, the 1 st peripheral wiring 33, the 2 nd detection electrode 34, and the 2 nd peripheral wiring 35 and the transparent substrate 30.
As another preferable embodiment of the transparent substrate 30, it is preferable that the surface provided with the 1 st detection electrode 32, the 1 st peripheral wiring 33, the 2 nd detection electrode 34, and the 2 nd peripheral wiring 35 has an undercoat layer containing a polymer. By forming a photosensitive layer for forming the 1 st detection electrode 32, the 1 st peripheral wiring 33, the 2 nd detection electrode 34, and the 2 nd peripheral wiring 35 on the undercoat layer, the adhesion between the 1 st detection electrode 32, the 1 st peripheral wiring 33, the 2 nd detection electrode 34, and the 2 nd peripheral wiring 35 and the transparent substrate 30 is further improved.
The method for forming the undercoat layer is not particularly limited, and examples thereof include a method in which a composition for forming an undercoat layer containing a polymer is applied to a substrate and, if necessary, subjected to a heat treatment. The composition for forming an undercoat layer may contain a solvent as needed. The type of the solvent is not particularly limited, and examples thereof include solvents used in a photosensitive layer-forming composition described later. As the composition for forming an undercoat layer containing a polymer, a latex containing polymer fine particles may be used.
The thickness of the undercoat layer is not particularly limited, but is preferably 0.02 to 0.3 μm, and more preferably 0.03 to 0.2 μm, from the viewpoint of more excellent adhesion between the 1 st detection electrode 32, the 1 st peripheral wiring 33, the 2 nd detection electrode 34, and the 2 nd peripheral wiring 35 and the transparent substrate 30.
The conductive thin film 10 may further include, for example, an anti-halation layer as another layer in addition to the undercoat layer, as necessary, between the transparent substrate 30 and the 1 st and 2 nd detection electrodes 32 and 34.
< metallic thin wire >
The fine metal wire 40 has conductivity and is made of, for example, a metal or an alloy. The thin metal wires 40 can be made of, for example, copper wires or silver wires. The fine metallic wires 40 preferably contain metallic silver, but may contain metals other than metallic silver, such as gold and copper. The fine metal wires 40 preferably contain a polymer binder such as silver metal and gelatin, which is suitable for forming a mesh pattern.
The fine metal wires 40 are not limited to those made of the above-mentioned metals or alloys, and may include, for example, metal oxide particles, metal pastes such as silver paste and copper paste, and metal nanowire particles such as silver nanowires and copper nanowires.
The mesh pattern of the 1 st detection electrode 32 and the 2 nd detection electrode 34 is not particularly limited, but is preferably a geometric pattern such as a triangle such as an equilateral triangle, an isosceles triangle, or a right triangle, a square, a rectangle, a rhombus, a parallelogram, or a trapezoid, a polygon such as a hexagon or an octagon, a circle, an ellipse, or a star, or a combination thereof. The grid pattern is a combination of a plurality of cells formed in a lattice shape by thin metal wires. Specifically, as shown in fig. 5, the pattern is a combination of a plurality of square lattices formed on the same surface of the transparent substrate and each composed of a plurality of intersecting fine metal wires 40. The grid pattern may be a structure in which similar and uniform grids are combined, or a structure in which different grids are combined. The length of one side of the lattice is not particularly limited, but is preferably 50 to 500 μm, and more preferably 150 to 300 μm, from the viewpoint of being difficult to visually recognize. When the length of the side of the unit cell is in the above range, the transparency can be further maintained well, and when the display device is attached to the front surface of the display device, the display can be visually recognized without discomfort.
The grid pattern of the 1 st detection electrode 32 and the 2 nd detection electrode 34 may be formed in a shape in which curves are combined, and may be formed in a lattice-like unit of a circle or an ellipse by combining arcs, for example. Examples of the arc include a 90 ° arc and a 180 ° arc.
The grid pattern of the 1 st detection electrode 32 and the 2 nd detection electrode 34 may be a random pattern. The random pattern is, for example, a pattern in which polygons of different types and sizes are arbitrarily combined. In addition, the random pattern means, for example, a pattern in which at least 1 of the arrangement pitch, angle, length, and shape is not constant for the polygon constituting the pattern. In addition, the polygon may be substantially a polygon, and a part or all of the sides may be curved.
In this case, for example, in the case of a regular rhombic shape, the random pattern is a pattern in which the opening is a parallelogram, which retains the angle and gives irregularity to the pitch. The random pattern may have rhombic openings and may have irregularities in the angles of the rhombic openings. The irregularity distribution may be a normal distribution or a uniform distribution.
Next, a method of forming the thin metal wires 40 will be described. The method of forming the thin metal wires 40 is not particularly limited as long as the thin metal wires can be formed on the transparent substrates 30 and 31. The thin metal wires 40 can be formed by, for example, electroplating, silver salt deposition, vapor deposition, printing, or the like.
A method of forming the thin metal wire 40 by the plating method will be described. For example, the fine metal wire 40 may be formed of a metal plating film formed on an electroless plating base layer by electroless plating the base layer. In this case, it may be formed as follows: a catalyst ink containing at least metal fine particles is formed in a pattern on a substrate, and then the substrate is immersed in an electroless plating bath to form a metal plating film. More specifically, the method for producing a metal-coated substrate described in japanese patent application laid-open No. 2014-159620 can be used. In addition, it can be formed as follows: a resin composition having at least a functional group capable of interacting with a metal catalyst precursor is formed in a pattern on a substrate, and then the substrate is immersed in an electroless plating bath by applying a catalyst or a catalyst precursor to form a metal plating film. More specifically, the method for producing a metal-coated substrate described in japanese patent application laid-open No. 2012-144761 can be applied.
A method of forming the fine metallic wire 40 by the silver salt method will be described. First, the thin metal wire 40 can be formed by performing an exposure process using an exposure pattern to be the thin metal wire 40 on a silver salt emulsion layer containing silver halide, and then performing a development process. More specifically, the method for producing a thin metal wire described in japanese patent application laid-open No. 2015-022397 can be used.
A method of forming the thin metal wire 40 by a vapor deposition method will be described. First, a copper foil layer is formed by vapor deposition, and a copper wiring is formed from the copper foil layer by photolithography, whereby the fine metal wire 40 can be formed. The copper foil layer may be an electrolytic copper foil, in addition to a vapor-deposited copper foil. More specifically, the step of forming copper wiring described in Japanese patent laid-open No. 2014-29614 can be utilized.
A method of forming the fine metal wire 40 by a printing method will be described. First, a conductive paste containing conductive powder is applied onto a substrate in the same pattern as the thin metal wires 40, and then heat treatment is performed, whereby the thin metal wires 40 can be formed. The patterning using the conductive paste is performed by, for example, an inkjet method or a screen printing method. As the conductive paste, more specifically, the conductive paste described in japanese patent application laid-open publication No. 2011-028985 can be used.
The present invention is basically constituted as described above. The conductive film and the touch panel of the present invention have been described in detail above, but the present invention is not limited to the above embodiments, and various improvements and modifications can be made without departing from the scope of the present invention.
Examples
The features of the present invention will be described in more detail below with reference to examples. The materials, reagents, amounts, substances, proportions, treatment contents, treatment procedures and the like shown in the following examples can be appropriately changed without departing from the gist of the present invention. Therefore, the scope of the present invention should not be construed as being limited to the specific examples shown below.
< embodiment 1 >
In example 1, a conductive thin film was obtained by designing a drawn line width in an exposure mask and forming a mesh pattern composed of fine metal lines having a line width continuously changed in a boundary region. A touch panel was produced using a liquid crystal display device having a 12-inch square display area, which corresponded to the display area, and was laminated on the liquid crystal display device to produce a touch panel module. In addition, in embodiment 1, the boundary area is set on all sides, i.e., 4 sides, of the quadrangular image display area. The image display region has a boundary region at an edge portion thereof.
Touch panel modules were produced in examples 1 to 13, examples 21 to 33, and examples 41 to 53, and comparative examples 1, 2, and 3 in which the widths of the thin metal wires were changed, and the image quality and the electric resistance were evaluated. The evaluation results are shown in table 1 below. Hereinafter, the touch panel module will be described.
< production of touch Panel Module for evaluation >
The prepared conductive film was laminated with a liquid crystal display device, an optically transparent adhesive (OCA, 8146-2 (product number) manufactured by 3M Company), each conductive film, an optically transparent adhesive (OCA, 8146-3 (product number) manufactured by 3M Company), and a cover glass in this order to prepare a touch panel module.
< evaluation of image quality >
The touch panel module thus produced was observed for display quality by 10 observers in a state where a specific image was displayed, and the degree of deterioration in image quality at the edge was scored from 1 point to 10 points based on the comparison between the central portion and the edge portion of the image display region, and the AAA-C evaluation was determined as follows based on the average score of 10 points. If any of AAA, AA, a, and B is evaluated, it is determined that there is no substantial degradation in image quality. If the image quality is evaluated as A to AAA, the image quality is judged to be good.
Further, a score of 4 or 7 may be performed among scores of 1 to 10 points for the image quality evaluation.
More than 8 points and 10 points below: even if carefully observed, the deterioration of image quality at the edge portion is not noticed at all
More than 5 points and 8 points below: even if carefully observed, the deterioration of image quality at the edge portion is hardly noticed and is not noticed
More than 3 points and 5 points below: when carefully observed, the deterioration of image quality at the edge portion is noticeable, but hardly noticeable
More than 1 point and 3 points below: when carefully observed, the image quality deterioration of the edge portion is noticed and slightly cares about
1 is divided into the following parts: it is noticeable at a glance that the image quality of the edge portion is deteriorated, and it is quite noticeable
AAA: the average score is more than 9
AA: the average score is more than 8 and less than 9
A: the average score is 6.5 to less than 8
B: the average score is more than 5 points and less than 6.5 points
C: average score is less than 5
< evaluation of resistance value >
Rb is the resistance value of the mesh pattern in the case where the boundary region is present, and R0 is the resistance value of the mesh pattern in the case where the boundary region is absent. The value of the ratio Rb/R0 of the resistance value Rb to the resistance value R0 was used to determine the AAA-C evaluation. When Rb/R0 was less than 98%, that is, when AAA, AA, a, and B were evaluated as described below, it was determined that the resistance value of the mesh pattern formed of the thin metal wires could be reduced by improving the pattern. When the resistance values were evaluated from a to AAA, the effect of decreasing the resistance was judged to be high.
The resistance value Rb and the resistance value R0 are values measured by a tester.
AAA: Rb/R0 is less than 90 percent
AA: Rb/R0 is more than 90% and less than 93%
A: Rb/R0 is more than 93% and less than 96%
B: Rb/R0 is more than 96% and less than 98%
C: Rb/R0 is more than 98%
The method for producing the conductive thin film 10 will be described below.
< method for producing conductive thin film >
(preparation of silver halide emulsion)
In the following solution 1 maintained at a temperature of 38 ℃ and a pH (potential of hydrogen: pH) of 4.5, the following solutions 2 and 3 were added simultaneously in amounts corresponding to 90% of each other over 20 minutes with stirring, to form core particles of 0.16. mu.m. Then, the following solutions 4 and 5 were added over 8 minutes, and the remaining 10% of the solutions 2 and 3 were added over 2 minutes to grow to 0.21. mu.m. Further, 0.15g of potassium iodide was added thereto, and the mixture was aged for 5 minutes to complete the formation of particles.
Solution 1:
… … 750ml of water
… … 9g of gelatin
… … 3g of sodium chloride
… … 20mg of 1, 3-dimethylimidazolidine-2-thione
Phenylsulfanyl sulfonic acid sodium salt … … 10mg
Citric acid … … 0.7.7 g
Liquid 2:
… … 300ml of water
Silver nitrate … … 150g
Liquid 3:
… … 300ml of water
… … 38g of sodium chloride
… … 32g of potassium bromide
… … 8ml of potassium hexachloroiridate (III) (0.005% KCl 20% aqueous solution)
Ammonium hexachlororhodate (0.001% NaCl 20% aqueous solution) … … 10ml
4, liquid:
… … 100ml of water
… … 50g of silver nitrate
Liquid 5:
… … 100ml of water
… … 13g of sodium chloride
… … 11g of potassium bromide
… … 5mg of potassium ferrocyanide
Thereafter, water washing was performed by a flocculation method according to a conventional method. Specifically, the temperature was lowered to 35 ℃ and the pH was lowered (pH 3.6. + -. 0.2 range) using sulfuric acid until silver halide was precipitated. Next, the supernatant was removed about 3 liters (1 st water wash). After further addition of 3 liters of distilled water, sulfuric acid was added to the silver halide precipitate. Again, 3 liters of supernatant was removed (2 nd water wash). The same operation as in the 2 nd water washing (3 rd water washing) was repeated 1 more time, and the water washing and desalting steps were completed. The emulsion after washing and desalting was adjusted to ph6.4 and pag7.5, 3.9g of gelatin, 10mg of sodium thiolsulfonate, 3mg of sodium thiosulfinate, 15mg of sodium thiosulfate and 10mg of chloroauric acid were added, chemical sensitization was performed at 55 ℃ so as to obtain the best sensitivity, and then 100mg of 1,3,3a, 7-tetraazaindene as a stabilizer and 100mg of Proxel (trade name, icico., ltd., manufactured) as a preservative were added. The final emulsion obtained was the following cubic silver iodochlorobromide particle emulsion: this emulsion contained silver iodide 0.08 mol%, the ratio of silver chlorobromide was 70 mol% silver chloride, and 30 mol% silver bromide, and the average particle size was 0.22 μm, and the coefficient of variation was 9%.
(preparation of composition for Forming photosensitive layer)
Adding 1.2 × 10 into the above emulsion -41,3,3a, 7-tetrazine, 1.2X 10 of mole/mole Ag-2Hydroquinone of mole/mole Ag, 3.0X 10-4Citric acid (mol/mol Ag), 2, 4-dichloro-6-hydroxy-1, 3, 5-triazine sodium salt (0.90 g/mol Ag) and a trace amount of hardener, and the pH of the coating solution was adjusted to 5.6 using citric acid. In addition, mol/mol Ag represents the number of moles with respect to 1mol of silver.
In the coating liquid, the polymer represented by (P-1) and the polymer latex containing a dispersant containing dialkylphenyl PEO sulfate were added so that the ratio of polymer/gelatin (mass ratio) to the gelatin contained was 0.5/1 (the ratio of dispersant/polymer was 2.0/100 to 0.02).
Furthermore, as a crosslinking agent, EPOXY RESIN DY 022 (trade name: Nagase ChemteX corporation, manufactured) was added. The amount of the crosslinking agent in the photosensitive layer described later was 0.09g/m2The amount of the crosslinking agent added was adjusted.
A composition for forming a photosensitive layer was prepared as above.
Further, the polymer represented by the above formula (P-1) is synthesized by referring to Japanese patent No. 3305459 and Japanese patent No. 3754745.
(photosensitive layer Forming step)
The above-mentioned polymer latex was coated on both sides of the transparent substrate 30, and an undercoat layer having a thickness of 0.05 μm was provided. A 100 μm polyethylene terephthalate (PET) film (manufactured by Fujifilm Corporation) was used for the transparent substrate 30.
Next, an antihalation layer comprising a mixture of the above-described polymer latex, gelatin, and a dye that is decolorized by an alkali of a developer at an optical concentration of about 1.0 is provided on the undercoat layer. The mixing mass ratio of the polymer and gelatin (polymer/gelatin) was 2/1, and the polymer content was 0.65g/m2。
The above composition for forming a photosensitive layer was coated on the antihalation layer, and the gelatin content was 0.08g/m2A composition obtained by mixing the above polymer latex, gelatin, EPOCROS K-2020E (trade name: NIPPON shokugaaico, ltd., product name: oxazoline-based crosslinking reactive polymer latex (crosslinking group: oxazoline group)), and SNOWTEX C (trade name: Nissan Chemical Industries, product name: ltd., product name: colloidal silica) at a solid content mass ratio (polymer/gelatin/EPOCROS K-2020E/SNOWTEX C (registered trademark)) 1/1/0.3/2 was applied, and a support having photosensitive layers formed on both sides was obtained. Will be formed on both sidesThe support having the photosensitive layer is a film a. The silver amount of the formed photosensitive layer was 6.2g/m2The gelatin content is 1.0g/m2。
(Exposure development step)
Photomasks having a grid pattern as shown in fig. 5 were prepared, respectively. A photomask having a grid pattern was placed on both surfaces of the film a, and exposure was performed using parallel light using a high-pressure mercury lamp as a light source.
After the exposure, development was carried out using a developer described below, and further development treatment was carried out using a fixer (trade name: CN16X, N3X-R, manufactured by Fujifilm Corporation). Then, the support was washed with pure water and dried, and thereby a functional pattern composed of Ag (silver) fine lines, a pattern for thickness adjustment composed of Ag fine lines, and a gelatin layer were formed on both surfaces of the support. A gelatin layer is formed between the Ag thin lines. The obtained film was designated as film B.
(composition of developing solution)
The following compounds were contained in 1 liter (L) of the developer.
Hydroquinone … … 0.037mol/L
N-methylaminophenol … … 0.016.016 mol/L
Sodium metaborate … … 0.140mol/L
Sodium hydroxide … … 0.360mol/L
Sodium bromide … … 0.031mol/L
Potassium metabisulfite … … 0.187mol/L
(treatment of decomposition of gelatin)
For the film B, the film was immersed in an aqueous solution of a proteolytic enzyme (Bioprase AL-15FG manufactured by Nagase ChemteX corporation, Ltd.) for 120 seconds (concentration of the proteolytic enzyme: 0.5% by mass, liquid temperature: 40 ℃ C.). The film B was taken out from the aqueous solution, immersed in warm water (liquid temperature: 50 ℃ C.) for 120 seconds, and washed. The film after the gelatin decomposition treatment was designated as film C.
(treatment for lowering resistance)
The film C was rolled under a pressure of 30kN using a rolling apparatus including a metal roll. At this time, 2 sheets of the PET film were conveyed while the rough surface of the PET film having the rough surface shape, which had a linear roughness Ra of 0.2 μm and an Sm of 1.9 μm (measured by a shape measuring laser microscope system VK-X110 manufactured by KEYENCE corporation (JIS-B-0601-1994)), was faced to the front surface and the back surface of the film C, and the rough surface shape was formed by transfer printing on the front surface and the back surface of the film C.
After the rolling treatment, the sheet was passed through a superheated steam bath at 150 ℃ for 120 seconds to be subjected to a heating treatment. The film after the heat treatment was designated as film D. The film D is a conductive film.
Next, examples 1 to 13, examples 21 to 33, and examples 41 to 53, and comparative examples 1, 2, and 3 will be described.
The dimensions of each part of the conductive thin films of examples 1 to 13, examples 21 to 33, and examples 41 to 53, and comparative examples 1, 2, and 3 are shown in table 1 below. With regard to the adjustment of the line width of the thin metal wire, the processing is performed to obtain a line width determined in advance by adjusting the width of a pattern corresponding to the thin metal wire in the exposure mask, the exposure amount, the exposure wavelength, the developing solution, the developing time, and the developing temperature condition. The exposure amount is exposure brightness and exposure time.
(example 1)
In example 1, the reference line width W0 of the thin metal wire was set to 4.0 μm, the thickest line width Wmax (hereinafter, referred to as the maximum line width Wmax) was set to 4.36 μm, and the boundary region L was set to 3.50 cm. The range L of the boundary region is set to be the same as the range of the line-width variation region Dc (refer to fig. 5).
(example 2)
In example 2, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 12.0 μm, and the range L of the boundary region was set to 2.00 cm.
(example 3)
In example 3, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 5.6 μm, and the range L of the boundary region was set to 2.00 cm.
(example 4)
In example 4, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 7.2 μm, and the range L of the boundary region was set to 1.00 cm.
(example 5)
In example 5, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 8.0 μm, and the range L of the boundary region was set to 1.00 cm.
(example 6)
In example 6, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 10.0 μm, and the range L of the boundary region was set to 1.25 cm.
(example 7)
In example 7, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 8.0 μm, and the range L of the boundary region was set to 2.00 cm.
(example 8)
In example 8, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 12.0 μm, and the range L of the boundary region was set to 1.50 cm.
(example 9)
In example 9, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 7.2 μm, and the range L of the boundary region was set to 2.00 cm.
(example 10)
In example 10, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 8.0 μm, and the range L of the boundary region was set to 1.34 cm.
(example 11)
In example 11, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 7.2 μm, and the range L of the boundary region was set to 1.20 cm.
(example 12)
In example 12, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 7.2 μm, and the range L of the boundary region was set to 1.00 cm.
(example 13)
In example 13, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 8.0 μm, and the range L of the boundary region was set to 2.20 cm.
Comparative example 1
In comparative example 1, the line width of the thin metal wire was not changed. The line width of the thin metal wire was set to 4.0. mu.m. In comparative example 1, the reference line width W0 and the maximum line width Wmax were both 4.0. mu.m.
(example 21)
In example 21, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 3.27 μm, and the range L of the boundary region was set to 3.50 cm.
(example 22)
In example 22, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 9.0 μm, and the range L of the boundary region was set to 2.00 cm.
(example 23)
In example 23, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 4.2 μm, and the range L of the boundary region was set to 2.00 cm.
(example 24)
In example 24, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 5.4 μm, and the range L of the boundary region was set to 1.00 cm.
(example 25)
In example 25, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 6.0 μm, and the range L of the boundary region was set to 1.00 cm.
(example 26)
In example 26, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 7.5 μm, and the range L of the boundary region was set to 1.25 cm.
(example 27)
In example 27, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 6.0 μm, and the range L of the boundary region was set to 2.00 cm.
(example 28)
In example 28, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 9.0 μm, and the range L of the boundary region was set to 1.50 cm.
(example 29)
In example 29, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 5.4 μm, and the range L of the boundary region was set to 2.00 cm.
(example 30)
In example 30, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 6.0 μm, and the range L of the boundary region was set to 1.34 cm.
(example 31)
In example 31, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 5.4 μm, and the range L of the boundary region was set to 1.20 cm.
(example 32)
In example 32, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 5.4 μm, and the range L of the boundary region was set to 1.00 cm.
(example 33)
In example 33, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 6.0 μm, and the range L of the boundary region was set to 2.20 cm.
Comparative example 2
In comparative example 2, the line width of the thin metal wire was not changed. The line width of the thin metal wire was set to 3.0. mu.m. In comparative example 2, the reference line width W0 and the maximum line width Wmax were both 3.0. mu.m.
(example 41)
In example 41, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 2.73 μm, and the boundary region L was 3.50 cm.
(example 42)
In example 42, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 7.5 μm, and the range L of the boundary region was 2.00 cm.
(example 43)
In example 43, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 3.5 μm, and the range L of the boundary region was 2.00 cm.
(example 44)
In example 44, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 4.5 μm, and the range L of the boundary region was 1.00 cm.
(example 45)
In example 45, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 5.0 μm, and the range L of the boundary region was 1.00 cm.
(example 46)
In example 46, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 6.3 μm, and the range L of the boundary region was 1.25 cm.
(example 47)
In example 47, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 5.0 μm, and the range L of the boundary region was 2.00 cm.
(example 48)
In example 48, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 7.5 μm, and the range L of the boundary region was 1.50 cm.
(example 49)
In example 49, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 4.5 μm, and the range L of the boundary region was 2.00 cm.
(example 50)
In example 50, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 5.0 μm, and the range L of the boundary region was 1.34 cm.
(example 51)
In example 51, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 4.5 μm, and the range L of the boundary region was 1.20 cm.
(example 52)
In example 52, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 4.5 μm, and the range L of the boundary region was 1.00 cm.
(example 53)
In example 53, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 5.0 μm, and the range L of the boundary region was 2.20 cm.
Comparative example 3
In comparative example 3, the line width of the thin metal wire was not changed. The line width of the thin metal wire was set to 2.5 μm. In comparative example 3, the reference line width W0 and the maximum line width Wmax were both 2.5 μm.
In Table 1 below, P1 has a value of 0.5 XWmax/W0, and P2 has a value of 4.77X (Wmax/W0) -4.19. And, "-" indicates none.
[ Table 1]
As shown in Table 1, in examples 1 to 13, examples 21 to 33, and examples 41 to 53, both the image quality evaluation and the resistance evaluation were "B" or more, and both the image quality and the low resistance were achieved. On the other hand, in comparative examples 1, 2 and 3, the resistance evaluation was poor, and the image quality and the low resistance could not be achieved at the same time.
In examples 1 and 13 in which the length of the range L of the boundary region exceeds 2cm, it is considered that the image quality deterioration at the edge portion easily enters the eyes of the observer because the range of the boundary region is wide, and the image quality evaluation is "B".
In examples 2 and 8 in which Wmax/W0 exceeded 2.5, the line width was considered to vary greatly, and the line width was easily recognized by the eyes of the observer, and the image quality evaluation was "B".
In examples 21 and 33 in which the length of the range L of the boundary region exceeds 2cm when the reference line width is 3.0 μm, it is considered that the image quality deterioration at the edge portion easily enters the eyes of the observer due to the wide range of the boundary region, and the image quality evaluation is "B".
In examples 22 and 28 in which Wmax/W0 exceeded 2.5, the line width was considered to vary greatly, and the line width was easily recognized by the eyes of the observer, and the image quality evaluation was "B".
In examples 41 and 53 in which the length of the range L of the boundary region exceeds 2cm when the reference line width is 2.5 μm, it is considered that the image quality deterioration at the edge portion easily enters the eyes of the observer due to the wide range of the boundary region, and the image quality evaluation is "B".
In examples 42 and 48 in which Wmax/W0 exceeded 2.5, the line width was considered to vary greatly, and the line width was easily recognized by the eyes of the observer, and the image quality evaluation was "B".
< embodiment 2 >
The embodiment 2 is the same as the embodiment 1 except that a boundary region is provided on 2 sides facing each other in the quadrangular image display region. Therefore, the configuration of the touch panel module, the method for manufacturing the touch panel module, and the method for evaluating the touch panel module will not be described in detail.
In example 2, the image quality and the electric resistance of the touch panel modules of examples 61 to 73, examples 81 to 93, and examples 101 to 113, and comparative examples 4, 5, and 6 were evaluated. In embodiment 2, the image display region has a boundary region at the edge portion of 2 opposing sides.
Next, touch panel modules of examples 61 to 73, examples 81 to 93, and examples 101 to 113, and comparative examples 4, 5, and 6 will be described.
The dimensions of each part of the conductive thin films of examples 61 to 73, examples 81 to 93 and examples 101 to 113 and comparative examples 4, 5 and 6 are shown in table 2 below. With regard to the adjustment of the line width of the thin metal wire, the processing is performed to obtain a line width determined in advance by adjusting the width of a pattern corresponding to the thin metal wire in the exposure mask, the exposure amount, the exposure wavelength, the developing solution, the developing time, and the developing temperature condition. The exposure amount is exposure brightness and exposure time.
(example 61)
In example 61, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 4.36 μm, and the boundary region L was set to 3.50 cm.
(example 62)
In example 62, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 12.0 μm, and the range L of the boundary region was set to 2.00 cm.
(example 63)
In example 63, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 5.6 μm, and the range L of the boundary region was set to 2.00 cm.
(example 64)
In example 64, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 7.2 μm, and the range L of the boundary region was set to 1.00 cm.
(example 65)
In example 65, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 8.0 μm, and the range L of the boundary region was set to 1.00 cm.
(example 66)
In example 66, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 10.0 μm, and the range L of the boundary region was set to 1.25 cm.
Example 67
In example 67, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 8.0 μm, and the range L of the boundary region was set to 2.00 cm.
(example 68)
In example 68, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 12.0 μm, and the range L of the boundary region was set to 1.50 cm.
(example 69)
In example 69, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 7.2 μm, and the range L of the boundary region was set to 2.00 cm.
(example 70)
In example 70, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 8.0 μm, and the range L of the boundary region was set to 1.34 cm.
(example 71)
In example 71, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 7.2 μm, and the range L of the boundary region was set to 1.20 cm.
(example 72)
In example 72, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 7.2 μm, and the range L of the boundary region was set to 1.00 cm.
(example 73)
In example 73, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 8.0 μm, and the range L of the boundary region was set to 2.20 cm.
Comparative example 4
In comparative example 4, the line width of the thin metal wire was not changed. The line width of the thin metal wire was set to 4.0. mu.m. In comparative example 4, the reference line width W0 and the maximum line width Wmax were both 4.0. mu.m.
(example 81)
In example 81, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 3.27 μm, and the range L of the boundary region was set to 3.50 cm.
(example 82)
In example 82, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 9.0 μm, and the range L of the boundary region was set to 2.00 cm.
(example 83)
In example 83, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 4.2 μm, and the range L of the boundary region was set to 2.00 cm.
(example 84)
In example 84, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 5.4 μm, and the range L of the boundary region was set to 1.00 cm.
(example 85)
In example 85, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 6.0 μm, and the range L of the boundary region was set to 1.00 cm.
(example 86)
In example 86, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 7.5 μm, and the range L of the boundary region was set to 1.25 cm.
Example 87
In example 87, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 6.0 μm, and the range L of the boundary region was set to 2.00 cm.
(example 88)
In example 88, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 9.0 μm, and the range L of the boundary region was set to 1.50 cm.
(example 89)
In example 89, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 5.4 μm, and the range L of the boundary region was set to 2.00 cm.
(example 90)
In example 90, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 6.0 μm, and the range L of the boundary region was set to 1.34 cm.
(example 91)
In example 91, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 5.4 μm, and the range L of the boundary region was set to 1.20 cm.
(example 92)
In example 92, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 5.4 μm, and the range L of the boundary region was set to 1.00 cm.
(example 93)
In example 93, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 6.0 μm, and the range L of the boundary region was set to 2.20 cm.
Comparative example 5
In comparative example 5, the line width of the thin metal wire was not changed. The line width of the thin metal wire was set to 3.0. mu.m. In comparative example 5, the reference line width W0 and the maximum line width Wmax were both 3.0. mu.m.
(example 101)
In example 101, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 2.73 μm, and the boundary region L was 3.50 cm.
(example 102)
In example 102, the reference line width W0 of the thin metal wire was set to 2.5 μm, the maximum line width Wmax was set to 7.5 μm, and the range L of the boundary region was set to 2.00 cm.
(example 103)
In example 103, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 3.5 μm, and the range L of the boundary region was 2.00 cm.
(example 104)
In example 104, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 4.5 μm, and the range L of the boundary region was 1.00 cm.
(example 105)
In example 105, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 5.0 μm, and the range L of the boundary region was 1.00 cm.
(example 106)
In example 106, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 6.3 μm, and the range L of the boundary region was 1.25 cm.
(example 107)
In example 107, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 5.0 μm, and the range L of the boundary region was 2.00 cm.
(example 108)
In example 108, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 7.5 μm, and the range L of the boundary region was 1.50 cm.
(example 109)
In example 109, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 4.5 μm, and the range L of the boundary region was 2.00 cm.
(example 110)
In example 110, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 5.0 μm, and the range L of the boundary region was 1.34 cm.
(example 111)
In example 111, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 4.5 μm, and the range L of the boundary region was 1.20 cm.
(example 112)
In example 112, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 4.5 μm, and the range L of the boundary region was 1.00 cm.
(example 113)
In example 113, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 5.0 μm, and the range L of the boundary region was 2.20 cm.
Comparative example 6
In comparative example 6, the line width of the thin metal wire was not changed. The line width of the thin metal wire was set to 2.5 μm. In comparative example 6, the reference line width W0 and the maximum line width Wmax were both 2.5 μm.
In Table 2 below, P1 has a value of 0.5 XWmax/W0, and P2 has a value of 4.77X (Wmax/W0) -4.19. And, "-" indicates none.
[ Table 2]
As shown in Table 2, in examples 61 to 73, examples 81 to 93 and examples 101 to 113, both the image quality evaluation and the resistance evaluation were "B" or more, and both the image quality and the low resistance were achieved. On the other hand, in comparative examples 4, 5 and 6, the resistance evaluation was poor, and the image quality and the low resistance could not be achieved at the same time.
In examples 61 and 73 in which the length of the range L of the boundary region exceeds 2cm, it is considered that the image quality deterioration at the edge portion easily enters the eyes of the observer because the range of the boundary region is wide, and the image quality evaluation is "B".
In examples 62 and 68 in which Wmax/W0 exceeded 2.5, the line width was considered to vary greatly, and the line width was easily recognized by the eyes of the observer, and the image quality evaluation was "B".
In examples 81 and 93 in which the length of the range L of the boundary region exceeds 2cm when the reference line width is 3.0 μm, it is considered that the image quality deterioration at the edge portion easily enters the eyes of the observer due to the wide range of the boundary region, and the image quality evaluation is "B".
In examples 82 and 88 in which Wmax/W0 exceeded 2.5, the line width was considered to vary greatly, and the line width was easily recognized by the eyes of the observer, and the image quality evaluation was "B".
In examples 101 and 113 in which the length of the range L of the boundary region exceeds 2cm when the reference line width is 2.5 μm, it is considered that the image quality deterioration at the edge portion easily enters the eyes of the observer due to the wide range of the boundary region, and the image quality evaluation is "B".
In examples 102 and 108 in which Wmax/W0 exceeded 2.5, the line width was considered to vary greatly, and the line width was easily recognized by the eyes of the observer, and the image quality was evaluated as "B".
< embodiment 3 >
The embodiment 3 is the same as the embodiment 1 except that a boundary region is provided on one side in a quadrangular image display region. Therefore, the configuration of the touch panel module, the method for manufacturing the touch panel module, and the method for evaluating the touch panel module will not be described in detail.
In example 3, the image quality and the electric resistance of the touch panel modules of examples 121 to 133, 141 to 153, and 161 to 173, and comparative examples 7, 8, and 9 were evaluated. In embodiment 3, a boundary region is provided at an edge portion of one side of the image display region.
Next, touch panel modules of examples 121 to 133, examples 141 to 153, and examples 161 to 173, and comparative examples 7, 8, and 9 will be described.
The dimensions of each part of the conductive thin films of examples 121 to 133, examples 141 to 153 and examples 161 to 173, and comparative examples 7, 8 and 9 are shown in table 3 below. With regard to the adjustment of the line width of the thin metal wire, the processing is performed to obtain a line width determined in advance by adjusting the width of a pattern corresponding to the thin metal wire in the exposure mask, the exposure amount, the exposure wavelength, the developing solution, the developing time, and the developing temperature condition. The exposure amount is exposure brightness and exposure time.
(example 121)
In example 121, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 4.36 μm, and the boundary region L was set to 3.50 cm.
(example 122)
In example 122, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 12.0 μm, and the range L of the boundary region was set to 2.00 cm.
(example 123)
In example 123, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 5.6 μm, and the range L of the boundary region was set to 2.00 cm.
(example 124)
In example 124, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 7.2 μm, and the range L of the boundary region was set to 1.00 cm.
(example 125)
In example 125, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 8.0 μm, and the range L of the boundary region was set to 1.00 cm.
(example 126)
In example 126, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 10.0 μm, and the range L of the boundary region was set to 1.25 cm.
(example 127)
In example 127, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 8.0 μm, and the range L of the boundary region was set to 2.00 cm.
(example 128)
In example 128, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 12.0 μm, and the range L of the boundary region was set to 1.50 cm.
(example 129)
In example 129, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 7.2 μm, and the range L of the boundary region was set to 2.00 cm.
Example 130
In example 130, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 8.0 μm, and the range L of the boundary region was set to 1.34 cm.
(example 131)
In example 131, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 7.2 μm, and the range L of the boundary region was set to 1.20 cm.
(example 132)
In example 132, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 7.2 μm, and the range L of the boundary region was set to 1.00 cm.
(example 133)
In example 133, the reference line width W0 of the thin metal wire was set to 4.0 μm, the maximum line width Wmax was set to 8.0 μm, and the range L of the boundary region was set to 2.20 cm.
Comparative example 7
In comparative example 7, the line width of the thin metal wire was not changed. The line width of the thin metal wire was set to 4.0. mu.m. In comparative example 7, the reference line width W0 and the maximum line width Wmax were both 4.0. mu.m.
(embodiment 141)
In example 141, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 3.27 μm, and the range L of the boundary region was set to 3.50 cm.
(example 142)
In example 142, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 9.0 μm, and the range L of the boundary region was set to 2.00 cm.
(example 143)
In example 143, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 4.2 μm, and the range L of the boundary region was set to 2.00 cm.
(example 144)
In example 144, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 5.4 μm, and the range L of the boundary region was set to 1.00 cm.
(example 145)
In example 145, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 6.0 μm, and the range L of the boundary region was set to 1.00 cm.
(example 146)
In example 146, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 7.5 μm, and the range L of the boundary region was set to 1.25 cm.
(example 147)
In example 147, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 6.0 μm, and the range L of the boundary region was set to 2.00 cm.
(example 148)
In example 148, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 9.0 μm, and the range L of the boundary region was set to 1.50 cm.
Example 149
In example 149, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 5.4 μm, and the range L of the boundary region was set to 2.00 cm.
Example 150
In example 150, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 6.0 μm, and the range L of the boundary region was set to 1.34 cm.
(example 151)
In example 151, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 5.4 μm, and the range L of the boundary region was set to 1.20 cm.
(example 152)
In example 152, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 5.4 μm, and the range L of the boundary region was set to 1.00 cm.
(example 153)
In example 153, the reference line width W0 of the thin metal wire was set to 3.0 μm, the maximum line width Wmax was set to 6.0 μm, and the range L of the boundary region was set to 2.20 cm.
Comparative example 8
In comparative example 8, the line width of the thin metal wire was not changed. The line width of the thin metal wire was set to 3.0. mu.m. In comparative example 8, the reference line width W0 and the maximum line width Wmax were both 3.0. mu.m.
(example 161)
In example 161, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 2.73 μm, and the boundary region L was 3.50 cm.
(example 162)
In example 162, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 7.5 μm, and the range L of the boundary region was 2.00 cm.
(example 163)
In example 163, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 3.5 μm, and the range L of the boundary region was 2.00 cm.
(example 164)
In example 164, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 4.5 μm, and the range L of the boundary region was 1.00 cm.
(example 165)
In example 165, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 5.0 μm, and the range L of the boundary region was 1.00 cm.
(example 166)
In example 166, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 6.3 μm, and the range L of the boundary region was 1.25 cm.
(example 167)
In example 167, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 5.0 μm, and the range L of the boundary region was 2.00 cm.
(example 168)
In example 168, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 7.5 μm, and the range L of the boundary region was 1.50 cm.
(example 169)
In example 169, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 4.5 μm, and the range L of the boundary region was 2.00 cm.
Example 170
In example 170, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 5.0 μm, and the range L of the boundary region was 1.34 cm.
(example 171)
In example 171, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 4.5 μm, and the range L of the boundary region was 1.20 cm.
(example 172)
In example 172, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 4.5 μm, and the range L of the boundary region was 1.00 cm.
(example 173)
In example 173, the reference line width W0 of the thin metal wire was 2.5 μm, the maximum line width Wmax was 5.0 μm, and the range L of the boundary region was 2.20 cm.
Comparative example 9
In comparative example 9, the line width of the thin metal wire was not changed. The line width of the thin metal wire was set to 2.5 μm. In comparative example 9, the reference line width W0 and the maximum line width Wmax were both 2.5. mu.m.
In Table 3 below, P1 has a value of 0.5 XWmax/W0, and P2 has a value of 4.77X (Wmax/W0) -4.19. And, "-" indicates none.
[ Table 3]
As shown in Table 3, in examples 121 to 133, examples 141 to 153, and examples 161 to 173, both the image quality evaluation and the resistance evaluation were "B" or more, and both the image quality and the low resistance were compatible. On the other hand, in comparative examples 7, 8 and 9, the resistance evaluation was poor, and the image quality and the low resistance could not be achieved at the same time.
In examples 121 and 133 in which the length of the range L of the boundary region exceeds 2cm, it is considered that the image quality deterioration at the edge portion easily enters the eyes of the observer because the range of the boundary region is wide, and the image quality evaluation is "B".
In examples 122 and 128 in which Wmax/W0 exceeded 2.5, the line width was considered to vary greatly, and the line width was easily recognized by the eyes of the observer, and the image quality evaluation was "B".
In examples 141 and 153 in which the reference line width was 3.0 μm and the length of the range L of the boundary region exceeded 2cm, it is considered that the image quality deterioration at the edge portion easily entered the eyes of the observer due to the wide range of the boundary region, and the image quality evaluation was "B".
In examples 142 and 148 in which Wmax/W0 exceeded 2.5, the line width was considered to vary greatly, and the line width was easily recognized by the eyes of the observer, and the image quality evaluation was "B".
In examples 161 and 173 in which the reference line width was 2.5 μm and the length of the range L of the boundary region exceeded 2cm, it is considered that the image quality deterioration at the edge portion easily entered the eyes of the observer due to the wide range of the boundary region, and the image quality evaluation was "B".
In examples 162 and 168 in which Wmax/W0 exceeded 2.5, the line width was considered to vary greatly, and the line width was easily recognized by the eyes of the observer, and the image quality evaluation was "B".
Description of the symbols
10. 11-conductive film, 10a, 12a, 30a, 31 a-surface, 12-protective layer, 13-touch sensor, 14-controller, 16-touch panel, 18-optically transparent layer, 20-display device, 22-display unit, 24-display device, 30, 31-transparent substrate, 30 b-back surface, 30 c-one side, 32a, 32 b-1 st detection electrode, 33-1 st peripheral wiring, 34 a-2 nd detection electrode, 33-1 st peripheral wiringSide electrode, 35-2 nd peripheral wiring, 36-1 st region, 37-boundary line, 38-2 nd region, 39-terminal, 40-fine metal wire, 50-1 st peripheral wiring portion, 52-2 nd peripheral wiring portion, 53-detecting portion, 54-decorative plate, 56-adhesive layer, 60-dummy electrode, 62-gap, BE-electrode boundary, Bc-boundary, C-point, D1-1 st direction, D2-2 nd direction, D3-stacking direction, Db-boundary region, Dc-line width variation region, Dn-direction, L1, L2, L3, L4-straight line, S-region, t-thickness, w-line width.
Claims (9)
1. A touch panel, the touch panel having:
a conductive thin film;
a protective layer that is provided on the conductive thin film and protects the conductive thin film;
a display device having a display unit;
the conductive thin film has:
a transparent substrate;
a detection unit provided on at least one surface of the transparent substrate and having a mesh pattern formed of fine metal wires; and
a peripheral wiring portion provided on at least one surface of the transparent substrate and electrically connected to the detection portion,
the touch panel is characterized in that it is,
in the transparent substrate, when the region provided with the detection part is a 1 st region and the region except the 1 st region is a 2 nd region, at least one part of a boundary region including a boundary line between the 1 st region and the 2 nd region has a line width variation region,
in the line width variation region, the line width of the thin metal line of the detection portion is larger than a reference line width of the thin metal line at the center of the 1 st region and continuously increases in a direction from the 1 st region toward the 2 nd region,
the 1 st region is superposed on a display region of the display unit, the conductive thin film is disposed on the display device, and the line width change region is provided on an edge portion of the display region of the display unit,
when the increasing rate of the line width of the thin metal wire is Y, the reference line width of the thin metal wire at the center of the 1 st region is W0, the thickest line width of the thin metal wire in the 1 st region is Wmax, and the ratio of the line width to the thickest line width is Wmax/W0, the following are satisfied:
Y≤2.0；
Wmax/W0≤2.5；
y is not less than 0.5 (Wmax/W0); and
Y≤4.77×(Wmax/W0)-4.19。
2. the touch panel according to claim 1,
the boundary region is a region that includes the boundary line and that crosses the 1 st region and the 2 nd region.
3. The touch panel according to claim 1,
the line width variation region is located in the entire region of the boundary region.
4. The touch panel according to claim 1,
the boundary region is in a quadrilateral shape, and the line width change region is located in a part of at least one side in the quadrilateral shape.
5. The touch panel according to any one of claims 1 to 4,
the detection section has a plurality of detection electrodes, the peripheral wiring section has a plurality of peripheral wirings, the plurality of detection electrodes are electrically connected to the plurality of peripheral wirings, respectively,
the detection electrode, which is connected to the detection electrode having the longest length of the peripheral wiring, has the line width change region in the boundary region.
6. The touch panel according to claim 5,
the detection portion has a dummy electrode electrically insulated from the detection electrode.
7. The touch panel according to any one of claims 1 to 4, wherein the boundary area is an area in which the grid pattern is formed.
8. The touch panel according to any one of claims 1 to 4, wherein the boundary region is the line width change region.
9. The touch panel according to any one of claims 1 to 4, wherein a length between the 1 st region and the 2 nd region in the line width change region is 2.0 cm.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-160570 | 2016-08-18 | ||
| JP2016160570 | 2016-08-18 | ||
| PCT/JP2017/027016 WO2018034119A1 (en) | 2016-08-18 | 2017-07-26 | Conductive film and touch panel |
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| Publication Number | Publication Date |
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| CN109564488A CN109564488A (en) | 2019-04-02 |
| CN109564488B true CN109564488B (en) | 2022-02-01 |
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| US (1) | US10664118B2 (en) |
| JP (1) | JP6705900B2 (en) |
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| KR102770000B1 (en) * | 2019-11-20 | 2025-02-20 | 엘지디스플레이 주식회사 | Touch display device and display panel |
| KR20210104399A (en) * | 2020-02-17 | 2021-08-25 | 삼성디스플레이 주식회사 | Display device and electronic device including the same |
| CN114089854A (en) * | 2020-08-25 | 2022-02-25 | 宸美（厦门）光电有限公司 | Touch panel, manufacturing method of touch panel, and touch device |
| US11347359B2 (en) | 2020-09-30 | 2022-05-31 | Tpk Advanced Solutions Inc. | Touch panel, manufacturing method of touch panel, and device thereof |
| US11650705B2 (en) * | 2020-12-07 | 2023-05-16 | Tpk Advanced Solutions Inc. | Touch panel, electronic device and manufacture method thereof |
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| Publication number | Publication date |
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| CN109564488A (en) | 2019-04-02 |
| WO2018034119A1 (en) | 2018-02-22 |
| US10664118B2 (en) | 2020-05-26 |
| JP6705900B2 (en) | 2020-06-03 |
| JPWO2018034119A1 (en) | 2019-06-13 |
| US20190155424A1 (en) | 2019-05-23 |
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