CN109560085A - Display panel and display module - Google Patents
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- CN109560085A CN109560085A CN201811504062.0A CN201811504062A CN109560085A CN 109560085 A CN109560085 A CN 109560085A CN 201811504062 A CN201811504062 A CN 201811504062A CN 109560085 A CN109560085 A CN 109560085A
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- 239000010410 layer Substances 0.000 claims abstract description 222
- 239000011241 protective layer Substances 0.000 claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims description 23
- 239000010408 film Substances 0.000 claims description 16
- 238000005452 bending Methods 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 27
- 238000000034 method Methods 0.000 abstract description 11
- 239000002253 acid Substances 0.000 abstract description 5
- 230000002427 irreversible effect Effects 0.000 abstract description 5
- 238000004140 cleaning Methods 0.000 abstract description 3
- 238000000465 moulding Methods 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000007769 metal material Substances 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910000809 Alumel Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
This application provides a kind of display panel and display module, the display panel includes display area；Non-display area positioned at the display area periphery, the non-display area includes buckled zone；Metal routing is located at the buckled zone；Protective layer, including being located at the first part of the display area and positioned at the second part of the buckled zone, the second part is located between organic filled layer in the metal routing and the buckled zone.The application is by being arranged protective layer between the metal routing in organic filled layer of buckled zone and on organic filled layer; generated high temperature when the metal routing molding on organic filled layer is avoided, makes the flexible material in organic filled layer that irreversible variation occur.In addition, protective layer prevents contact of the acid solution with flexible material in cleaning process, the flexible material of buckled zone is protected, improves the yield of display panel.
Description
Technical field
This application involves display field, in particular to a kind of display panel and display module.
Background technique
With the development of display industry technology, user requires the design of display panel higher and higher therefore flexible
The design of display panel is more and more important.
Display panel in the prior art includes buckled zone, and the buckled zone is provided with organic filled layer and is located at described
Metal routing on organic filled layer.The metal material of the metal routing generally use titanium aluminium titanium (Titanium, metallic aluminium and
Titanium is stacked), and a large amount of heat can be discharged by forming this film layer structure, and the flexible material of buckled zone is caused to occur not
Reversible variation influences the bending property of flexible display panels.
Summary of the invention
The application provides a kind of display panel and display module, easy to solve flexible material in existing display panel buckled zone
The technical issues of damage.
To solve the above problems, technical solution provided by the present application is as follows:
The application provides a kind of display panel comprising:
Display area；
Non-display area positioned at the display area periphery, the non-display area includes buckled zone；
Metal routing is located at the buckled zone；And
Protective layer, including being located at the first part of the display area and positioned at the second part of the buckled zone, institute
It states between organic filled layer that second part is located in the metal routing and the buckled zone.
In the display panel of the application, the display panel includes substrate and the film crystalline substance on the substrate
Body tube layer；
Wherein, the tft layer includes the multilayer dielectric layer stacked gradually on the substrate and is formed in institute
State the source-drain electrode layer on multilayer dielectric layer.
In the display panel of the application, organic filled layer and the multilayer dielectric layer have lap；
The lap is located on the multilayer dielectric layer.
In the display panel of the application, the lap includes the first lap and the second lap；
It is Chong Die with the multilayer dielectric layer described to be formed close to the side of organic filled layer of the display area
The side of first lap, organic filled layer far from the display area is Chong Die with the multilayer dielectric layer to be formed
Second lap.
In the display panel of the application, the multilayer dielectric layer include the first gate insulation layer, be located at the first grid it is exhausted
The second gate insulation layer in edge layer and on second gate insulation layer between insulating layer；
The protective layer and it is described between insulating layer same layer be arranged.
In the display panel of the application, the first part and the second part same layer are arranged.
In the display panel of the application, the thicknesses of layers of the protective layer is 90 nanometers to 110 nanometers.
In the display panel of the application, the protective layer is inorganic film.
In the display panel of the application, the metal routing is arranged with the source-drain electrode layer same layer is located at.
The application also proposed a kind of display module, the display module include touch control layer, polarizing layer, cover layer and on
State display panel；
Wherein, the touch control layer, the polarizing layer and the cover layer are set on the display panel.
The utility model has the advantages that the application by organic filled layer in buckled zone and the metal routing that is located on organic filled layer it
Between protective layer is set, generated high temperature when avoiding the metal routing molding on organic filled layer makes described organic fill out
Irreversible variation occurs for the flexible material filled in layer.In addition, protective layer prevents connecing for acid solution and flexible material in cleaning process
Touching, protects the flexible material of buckled zone, improves the yield of display panel.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some of invention
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is the film layer structure figure of one display panel of the embodiment of the present application；
Fig. 2 is the film layer structure figure of two display panel of the embodiment of the present application.
Specific embodiment
The explanation of following embodiment is referred to the additional illustration, the particular implementation that can be used to implement to illustrate the application
Example.The direction term that the application is previously mentioned, such as [on], [under], [preceding], [rear], [left side], [right side], [interior], [outer], [side]
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the application, rather than to
Limit the application.The similar unit of structure is with being given the same reference numerals in the figure.
Referring to Fig. 1, Fig. 1 is the film layer structure figure of one display panel of the embodiment of the present application.
The display panel 100 includes the display area A and non-display area B positioned at the periphery display area A.Institute
Stating non-display area B includes buckled zone C.
The display panel 100 further includes the metal routing 113 for being set to the buckled zone C.
The display panel includes substrate 101 and the tft layer 10 on the substrate 101.It is described thin
Film transistor layer 10 includes the multilayer dielectric layer stacked gradually on the substrate 101 and is formed on the multilayer dielectric layer
Source-drain electrode layer 110.
The tft layer 10 includes etch stop layer type, back channel etch type, top-gate thin-film transistors type and bottom
Gate thin-film transistors type structure, specific there is no limit.
The present embodiment is illustrated by taking top-gate thin-film transistors type as an example.
Referring to Fig. 1, the tft layer 10 include buffer layer 102, active layer 103, the first gate insulation layer 104,
First grid layer 105, the second gate insulation layer 106, second grid layer 107, insulating layer 108, source-drain electrode layer 110 and flatness layer
111.In the present embodiment, the multilayer dielectric layer includes the first gate insulation layer 104, the second gate insulation layer 106 and insulating layer
108。
The substrate 101 can be one of glass substrate, quartz base plate, resin substrate etc..The substrate 101 can also
Think that flexible base board, the material of the substrate 101 can be Kapton.
In one embodiment, the substrate 101 may be, but is not limited to using Double-layer flexible substrate, two sheets of flexible substrate
Between the inorganic films (not shown) such as silica is set.
The buffer layer 102 is formed on the substrate 101, is mainly used for buffering pressure and resistance between film layer structure
Every outside water oxygen.
In one embodiment, the thicknesses of layers of the buffer layer 102 is 500 nanometers.
In one embodiment, the material of the buffer layer 102 can be in silicon nitride, silica or silicon oxynitride etc.
One of or both composition.
The active layer 103 is formed on the buffer layer 102, and the active layer 103 includes the doping through ion doping
Area 1031, the source-drain electrode layer 110 are electrically connected by the first via hole 109 with the doped region 1031 in the active layer 103.
First gate insulation layer 104 is formed on the active layer 103.
In one embodiment, the thicknesses of layers of first gate insulation layer 104 can be but be not limited to 100 nanometers.
The first grid layer 105 is formed on first gate insulation layer 104.
In one embodiment, the metal material of the first grid layer 105 can close for molybdenum, aluminium, alumel, molybdenum tungsten
The metals such as gold, chromium or copper, also can be used the composition of above-mentioned several metal materials.
Second gate insulation layer 106 is formed on the first grid layer 105.
In one embodiment, the material phase of the material of second gate insulation layer 106 and first gate insulation layer 104
Together.
In one embodiment, the thicknesses of layers of first gate insulation layer 104 can be but be not limited to 120 nanometers.
The second grid layer 107 is formed on second gate insulation layer 106, the material of the second grid layer 107
It is identical with the first grid layer 105.The second grid layer 107 only as storage capacitors in tft layer 10 one
A electrode, it is different from the function of the first grid layer 105.
In one embodiment, the metal material of the first grid layer 105 and the second grid layer 107 can be
Molybdenum.
Described insulating layer 108 is formed on the second grid layer 107.
In one embodiment, the thickness of insulating layer 108 can be but be not limited to 500nm between described.
In one embodiment, the material of insulating layer 108 is identical with the material of first gate insulation layer 104 between described.
The source-drain electrode layer 110 be formed in it is described between on insulating layer 108.The source-drain electrode layer 110 passes through first mistake
Hole 109 is electrically connected with the doped region 1031 of the active layer 103.
The metal material of the source-drain electrode layer 110 can close for molybdenum, aluminium, alumel, molybdenum and tungsten alloy, chromium, copper or titanium aluminium
One of metals such as gold or more than one composition.
In one embodiment, the metal material of the source-drain electrode layer 110 can be titanium-aluminium alloy.
The flatness layer 111 is formed on the source-drain electrode layer 110.
Referring to Fig. 1, the non-display area B includes buckled zone C.The buckled zone C includes substrate 101, positioned at described
Organic filled layer 112 on substrate 101 and the metal routing 113 on organic filled layer 112.The gold
Belong to cabling 113 and 110 same layer of source-drain electrode layer is arranged, is formed in light shield technique with along with.
In one embodiment, organic filled layer 112 is filled with flexible material.The flexible material can use and base
The identical Kapton of plate 101, increases the flexibility of the display panel 100.
Referring to Fig. 1, organic filled layer 112 has lap, the lap with the multilayer dielectric layer
On the multilayer dielectric layer.The lap includes the first lap 301 and the second lap 302.Close to institute
The side for stating organic filled layer 112 of display area A is Chong Die with the multilayer dielectric layer to form first overlapping portion
Divide 301, the side of organic filled layer 112 far from the display area A is Chong Die with the multilayer dielectric layer to be formed
State the second lap 302.
In one embodiment, organic filled layer 112 is formed in the buckled zone C by etch process.In shape
After insulating layer 108 between described, buffer layer 102, the first gate insulation layer 104, the second gate insulation layer in the buckled zone C are removed
106 and insulating layer 108, form groove, and in the groove filling flexible material to form organic filled layer 112.
In one embodiment, organic filled layer is inclined to display area A and binding area's (not shown) with one
The gradient further increases the shared ratio of organic filled layer, improves the flexibility of the display panel.
Referring to Fig. 1, the display panel 100 further includes protective layer 114.
The protective layer 114 includes positioned at the first part 1141 of the display area and positioned at the buckled zone C
Second part 1142, the second part 1142 are located at organic filled layer in the metal routing 113 and buckled zone C
Between 112.
In one embodiment, the first part 1141 is arranged with 1142 same layer of second part.
In one embodiment, the protective layer 114 can only include the second part positioned at the buckled zone C
1142, cover organic filled layer 112.Alternatively, refering to fig. 1, the protective layer 114 can be located at it is described between insulating layer 108
Between the source-drain electrode layer 110.
In one embodiment, the material of the protective layer 114 is inorganic film.
In one embodiment, the material of the protective layer 114 can be at least one of silica, silicon nitride etc..
In one embodiment, the thicknesses of layers of the protective layer 114 can be 90 nanometers to 110 nanometers.
Since the flexible material in organic filled layer 112 is organic material, the process warm of the protective layer 114 is formed
Spend the critical value not above the organic material.
In one embodiment, the application forms the protective layer 114, the protective layer 114 using film formation at low temp technique
It may be, but is not limited to cover the entire display panel 100.
Due to the presence of the protective layer 114, hydrogen fluorine used in 113 etching technics of metal routing is not only avoided
Corrosion of the acid to organic filled layer 112, and when avoiding the metal routing 113 film forming the high temperature energy that discharges to having
The irreversible change of machine filled layer 112.Therefore, the present embodiment not only relieves limitation of organic filled layer to flexible material, and
And the film forming success rate of the metal routing 113 is further improved, save cost.
Referring to Fig. 2, Fig. 2 is the film layer structure figure of two display panel of the embodiment of the present application.
The present embodiment is the same as example 1 or similar, the difference is that:
In one embodiment, the protective layer 214 can be the source-drain electrode layer 210 close in the multilayer dielectric layer
In between insulating layer 208.
In the display area A of the display panel 200, the display panel 200 includes substrate 201, is located at the base
Multilayer dielectric layer on plate 201 and the source-drain electrode layer 210 on the multilayer dielectric layer.The multilayer dielectric layer includes the
One gate insulation layer 204, the second gate insulation layer 206 and insulating layer 208.
Referring to Fig. 2, organic filled layer 212 is formed in the buckled zone C by etch process.Described in formation
After second gate insulation layer 206, buffer layer 202, the first gate insulation layer 204, the second gate insulation layer in the buckled zone C are removed
206, formed groove, and in the groove filling flexible material to form organic filled layer 112.
Finally, formed on second gate insulation layer 206 it is described between insulating layer 208, using insulating layer 208 between described as
Protective layer 214 in the present embodiment.
Similar with embodiment one, organic filled layer 212 can form lap with second gate insulation layer 206
(not shown), the present embodiment is without specifically introducing.
In one embodiment, in order to guarantee the flexibility of the display panel 200, organic filled layer of the buckled zone C
212 thickness is as big as possible.Therefore, the thickness of organic filled layer 212 in the present embodiment is greater than buffer layer 202, first
The sum of the thickness of gate insulation layer 204 and the second gate insulation layer 206.The spacing of organic filled layer 212 and the substrate 201 can
To be greater than the spacing of second gate insulation layer 206 and the substrate 201.
It is similar to embodiment one, since the flexible material in organic filled layer 212 is organic material, it is located at institute
State critical value of the technological temperature not above the organic material of the protective layer 214 on organic filled layer 212.The application is using low
Warm film-forming process forms the protective layer 214 (insulating layer 208 between described in i.e.)；
Compared with specific embodiment one, embodiment two saves one of light shield, forms the guarantor using film formation at low temp technique
Sheath 214.Due to the presence of the protective layer 214, hydrogen fluorine used in 213 etching technics of metal routing is not only avoided
Corrosion of the acid to organic filled layer 212, and when avoiding the metal routing 213 film forming the high temperature energy that discharges to having
The irreversible change of machine filled layer 212.
According to further aspect of the application, a kind of display module is additionally provided, the display module includes the display
Panel further includes the touch control layer set gradually on said display panel, polarizing layer and cover layer.
According to the another aspect of the application, a kind of electronic device is additionally provided, the electronic device includes the display
Mould group；The electronic device includes but is not limited to mobile phone, tablet computer, computer display, game machine, television set, display
Screen, wearable device and other living electric apparatus or household electrical appliance having a display function etc..
The working principle of the working principle of the display module, the working principle of the electronic device and the display panel
Similar, the working principle of the working principle of the display module and the electronic device can specifically refer to the display panel
Working principle.
This application provides a kind of display panel and display module, the display panel includes the gold positioned at the buckled zone
Belong to cabling and protective layer；The protective layer is located between the metal routing and organic filled layer in the buckled zone.
The application is avoided by the way that protective layer is arranged between the metal routing in organic filled layer of buckled zone and on organic filled layer
Generated high temperature, sends out the flexible material in organic filled layer when metal routing molding on organic filled layer
Raw irreversible variation.In addition, protective layer prevents contact of the acid solution with flexible material in cleaning process, the soft of buckled zone is protected
Property material, improves the yield of display panel.
Although above preferred embodiment is not to limit in conclusion the application is disclosed above with preferred embodiment
The application processed, those skilled in the art are not departing from spirit and scope, can make various changes and profit
Decorations, therefore the protection scope of the application subjects to the scope of the claims.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811504062.0A CN109560085A (en) | 2018-12-10 | 2018-12-10 | Display panel and display module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811504062.0A CN109560085A (en) | 2018-12-10 | 2018-12-10 | Display panel and display module |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110416227A (en) * | 2019-07-30 | 2019-11-05 | 京东方科技集团股份有限公司 | Display substrate and preparation method thereof, and display device |
| WO2020232827A1 (en) * | 2019-05-20 | 2020-11-26 | 武汉华星光电半导体显示技术有限公司 | Display panel and manufacturing method thereof, and display device |
| CN112186002A (en) * | 2019-07-02 | 2021-01-05 | 三星显示有限公司 | Display device |
| CN114171538A (en) * | 2021-12-07 | 2022-03-11 | 深圳市华星光电半导体显示技术有限公司 | Display panel, display device, and manufacturing method of display panel |
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