CN109547718A - A kind of Miniaturization high-gain low-light (level) Image intensifier - Google Patents
A kind of Miniaturization high-gain low-light (level) Image intensifier Download PDFInfo
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- CN109547718A CN109547718A CN201811469603.0A CN201811469603A CN109547718A CN 109547718 A CN109547718 A CN 109547718A CN 201811469603 A CN201811469603 A CN 201811469603A CN 109547718 A CN109547718 A CN 109547718A
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- becket
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- cmos image
- photocathode
- light
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- 239000000919 ceramic Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000007789 sealing Methods 0.000 claims abstract description 6
- 238000003466 welding Methods 0.000 claims abstract description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 238000005476 soldering Methods 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052792 caesium Inorganic materials 0.000 claims description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 239000010955 niobium Substances 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- 239000011591 potassium Substances 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 239000011734 sodium Substances 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- 230000004297 night vision Effects 0.000 abstract description 25
- 238000003384 imaging method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000005685 electric field effect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 208000019155 Radiation injury Diseases 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000029918 bioluminescence Effects 0.000 description 1
- 238000005415 bioluminescence Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000004438 eyesight Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Telescopes (AREA)
Abstract
The invention discloses a kind of Miniaturization high-gain low-light (level) Image intensifiers, are mainly used for military helmet night vision device night vision product similar with relevant industries.Its main technical schemes: shell input terminal and input window sealing welding, shell end and cmos image sensor output end sealing welding；Photocathode is coated in input window inner surface effective district；Microchannel plate is mounted between the second becket of shell and third becket；Cmos image sensor and ceramic substrate weld, and cmos image sensor output end is connect with reading circuit plate.The present invention passes through probationary certificate: fundamentally overcoming the low phenomenon of former device gain, reaches and effectively improve device gain, realize miniaturization, adapts to the single demand with night vision product such as military helmet night vision device.
Description
Technical field
The present invention relates to a kind of photoelectronic imaging device, specifically a kind of Miniaturization high-gain electron bombardment cmos image sensing
The low-light (level) Image intensifier of device is mainly used for military helmet night vision device night vision product similar with relevant industries.
Background technique
With the development of cmos image sensor technology, electron bombardment cmos image sensor (hereinafter referred to as electron bombardment
CMOS low-light (level) Image intensifier) it is used as a kind of novel low-light-level imaging device, in fields such as safety supervision, medicine, scientific researches
Important application is played.In the military night vision instrument using helmet night vision product as representative, to meet individual soldier's night operations, row
Into and observation demand, need to have preferable imaging performance under low light conditions, also want small in size, light-weight, using the longevity
Order the image device of the features such as long.Military individual soldier's night vision device such as the helmet night vision system that existing gleam image intensifier is equipped,
Although having supplied army and units concerned using for many years, general requirement can satisfy substantially, it can only be in illumination
10-3Lx or more works, and inefficient fruit is just poor again for illumination, such as operating distance, resolution ratio do not reach requirement, at the same in volume and
Also undesirable in weight, the night of the individual such as inconvenient individual soldier carries, and is not able to satisfy the demand under battle conditions with physical condition.
Existing electron bombardment CMOS low-light (level) Image intensifier (see figure 1) image-forming principle: in shell 3, incident light
2 surface of photocathode is irradiated by input terminal 1 and generates photoelectron, and photoelectron accelerates under high voltage electric field effect, gets to CMOS figure
More multiplied electrons, electron bombardment are generated as on sensor 4, generating electron hole pair, and under the effect of internal bias field
Semiconductor realizes gain, these electronics are collected by the potential well inside semiconductor, and are read by the reading circuit of rear end 5, obtains institute
The video image needed.The device weighs 57 grams, small in size, light-weight, but gain only has 200~500 times or so, it is clear that cannot be used for
Low-light (level) 10-3In the military helmet night vision system that lx or less works, it is only used for general civilian night vision instrument and bioluminescence
Imaging, this is that the performance of cmos image sensor is determined.
Another electron bombardment CMOS low-light (level) Image intensifier (see figure 2) by input terminal 1, photocathode 2, shell 3,
Cmos image sensor 4, reading circuit 5, becket (electrode) 6, magnetic field producer 7 form, compound poly- using electrostatic and magnetic field
Collection accelerates photoelectron using multiple electrodes, and photoelectron is focused on 4 surface of cmos image sensor using magnetic field producer 7,
High image resolution ratio can be obtained, the working life of image device is extended in the lower situation of energy of photoelectron.But gain
Only 200 times or so, due to the use of multiple electrodes and magnetic field producer, lead to that volume is big, weight weight, provisioned complete machine is difficult
To realize miniaturization, therefore it is not suitable for military helmet night vision system, is only used for the detection of general faint optical signal yet.
Summary of the invention
Main task and purpose of the invention is, for existing for current electron bombardment CMOS low-light (level) Image intensifier
Defect, designs a kind of Miniaturization high-gain low-light (level) Image intensifier, and the phenomenon for fundamentally overcoming former device gain low reaches
It to device gain is effectively improved, realizes miniaturization, prolongs the service life, adapting to military helmet night vision device etc., one is produced with night vision
The demand of product.
Main technical schemes of the invention: comprising input window, photocathode, shell, cmos image sensor, electricity is read
Road, microchannel plate, getter, ring flange, Ni, Cr metallic diaphragm, ceramic substrate, specific structure are the of A, shell input terminal
By low temperature indium stannum alloy solder sealing welding, the fifth metal ring and cmos image of shell end are passed for one becket and input window
The ring flange laser seal welding of sensor signal cap assembly, thus input window, shell, signal output end three composition one
Closed tubular body；B, wherein photocathode is coated in the effective district of input window inner surface center, photocathode and input window side
Ni, Cr metallic diaphragm of edge are connected；C, microchannel plate is mounted on the second becket and third metal of shell by spring pressuring ring
Between ring；D, the 4th becket inner wall welds getter；E, the distance of microchannel plate to photocathode is 0.08 mm~0.2
Mm, the distance of microchannel plate to cmos image sensor are the mm of 0.3 mm~0.8；F, cmos image sensor and ceramic substrate
It is welded to connect, ceramic substrate and ring flange are welded to connect by glass powder；G, cmos image sensor output end and reading circuit
Connection.
The present invention passes through probationary certificate: development purpose is fully achieved, the present invention obtains higher brightness gain, and gain is reachable
105Times, it is the 10 of former device gain3Times；The military helmet night vision device equipped can be 10 in illumination-4Work under the conditions of lx is below
Make, below an order of magnitude lower than Original Photo degree；Service life is more than 5000 hours；In terms of volume and weight, than low-light picture
Booster is smaller lighter, and military helmet night vision device and similar night vision product is made to be easier to realize miniaturization.
Detailed description of the invention
With reference to the accompanying drawing, a specific embodiment of the invention is described in further detail.
Fig. 1 is a kind of schematic diagram of existing electron bombardment CMOS low-light (level) Image intensifier.
Fig. 2 is the schematic diagram of existing another electron bombardment CMOS low-light (level) Image intensifier.
Fig. 3 is structural schematic diagram of the invention.
Fig. 4 is 3 structure sectional view of shell of the invention.
Fig. 5 is the working principle of the invention figure.
Fig. 6 is the operation principle schematic diagram that the present invention is used for military helmet night vision device.
Specific embodiment
Referring to Fig. 3, be illustrated to main technical schemes of the invention: the present invention includes input window 1, photocathode 2, pipe
Shell 3, cmos image sensor 4, reading circuit 5, microchannel plate 8, getter 9, ring flange 10, Ni, Cr metallic diaphragm 11, ceramics
Substrate 12, specific structure are that A, the first becket 3a of 3 input terminal of shell and input window 1 are close by low temperature indium stannum alloy solder
Soldering and sealing connects, and the fifth metal ring 3i and 10 laser of ring flange of 4 signal output end component of cmos image sensor of 3 end of shell are close
Soldering and sealing connects, thus input window 1, shell 3, signal output end three one closed tubular body of composition；B, wherein photocathode 2 plates
In the effective district of input window inner surface center, photocathode 2 is connected system with Ni, Cr metallic diaphragm 11 of input window edge；C, micro-
Channel plate 8 is mounted between the second becket (3c) of shell 3 and third becket (3e) by spring pressuring ring；D, the 4th metal
Ring 3g inner wall welds getter 9；E, the distance of microchannel plate 8 to photocathode 2 is the mm of 0.08 mm~0.2, and microchannel plate 8 arrives
The distance of cmos image sensor 4 is the mm of 0.3 mm~0.8；F, cmos image sensor 4 and ceramic substrate 12 are welded to connect,
Ceramic substrate and ring flange 10 are welded to connect by glass powder；G, 4 output end of cmos image sensor is connect with reading circuit 5.
Referring to Fig. 3, the input window 1 is the K9 glass with extinction layer, and 1 inner surface edge of input window is coated with thickness and is
2000 angstroms of Ni, Cr metallic diaphragm 11；The shell 3 is by the first ceramic ring 3b, the second ceramic ring 3d, third ceramic ring
3f, the 4th ceramic ring 3h and the first becket 3a, the second becket 3c, third becket 3e, the 4th becket 3g, fifth metal
Cylindrical case (see figure 4) made of ring 3i soldering, wherein five beckets are the electrode of device, metal material used is can valve conjunction
Gold；The photocathode 2 is coated on input window inner surface center effective district (in 85% region of input window diameter)；Described
Photocathode 2 is the negative electron affinity photocathode of potassium, sodium, caesium, the multialkali photocathode of antimony or the sub- efficiency of higher amount；Institute
The cmos image sensor 4 stated is the standard component purchased, and is SONY for the back-illuminated cmos image sensor being thinned, such as trade mark
IMX178LQJ；The microchannel plate 8, input terminal plating are formed with Al2O3Or SiO2Deng reduce microchannel plate noise thin-film material,
Microchannel plate is standard component, and specification is 6 μ 0.33, such as BB plate；The getter 9 is the strip materials such as niobium or titanium；Institute
The ceramic substrate 12 stated, for the standard component purchased；The reading circuit 5, for the standard component purchased；The cmos image sensing
4 signal output end component of device, including cmos image sensor, ceramic substrate, ring flange.
Referring to Fig. 3, when work, photocathode 2 is not higher than -200V, microchannel plate to 8 input terminal institute's making alive of microchannel plate
Output end is 800V to the voltage of microchannel plate input terminal, and cmos image sensor 4 is electric to applying between microchannel plate output end
Pressure is+2 kV~3kV.The shape for the closed tube body that the above input window, shell, signal output end three are constituted, as needed
It can be rectangular.
Referring to Fig. 5, the working principle of the invention: incident photon is radiated at negative 2 surfaces of photoelectricity and generates photoelectron, and photoelectron exists
Enter microchannel plate 8 under voltage acceleration, carries out electronics and double for the first time, the electronics after multiplication is in microchannel plate 8 and CMOS
Under high voltage electric field effect between imaging sensor 4, accelerate into inside cmos image sensor, bombardment generates electron hole
It is right, it after high-energy electron hole is to collision generates more secondary electrons under electric field action, is collected by potential well, by reading electricity
Road 5 provides operating voltage for cmos image sensor, and the multiplied electron that each pixel generates will generate a biggish electric current letter
Number, this current signal directly exports, and under logic control program, can finally be obtained by acquiring the photosignal of all pixels
The image of atomic weak signal target.
Referring to 6, the present invention is used for the embodiment of military helmet night vision device, working principle: object lens 13 are by the faint of target
Optical imagery projects on the photocathode of the present invention 14, and the present invention exports vision signal for after optical imagery conversion enhancing
Onto miniature display screen 15, amplifies finally by eyepiece 16, observe enhanced target image for human eye 17.Military helmet night
The military helmet night vision device of existing gleam image intensifier equipment is superior to depending on instrument using effect and every the key technical indexes.Also
For other helmet night vision devices, structure and working principle are essentially identical, will not enumerate here.
Referring to Fig. 3, to Analysis on Key Technologies of the present invention: the present invention utilizes 8 He of high-gain electronic component microchannel plate (MCP)
Cmos image sensor 4 carries out photo-multiplier twice, obtains the gain of higher brightness, device gain is up to 105(microchannel again
Plate gain is up to 103, cmos image sensor gain is 102), it is the 10 of former device gain3Times；The military helmet night vision equipped
Instrument can be 10 in illumination-4It works under the conditions of lx is below, an order of magnitude lower than Original Photo degree is hereinafter, improve work quality；
The energy of photoelectron for bombarding cmos image sensor surface controls within the limit of interface radiation injury, and service life is more than
5000 hours；It is the 70% of gleam image intensifier in terms of volume and weight, it is smaller lighter than gleam image intensifier, make military head
The similar night vision product such as helmet night vision device is easier to realize miniaturization.
Claims (5)
1. a kind of Miniaturization high-gain low-light (level) Image intensifier, it is characterised in that: include input window (1), photocathode
(2), shell (3), cmos image sensor (4), reading circuit (5), microchannel plate (8), getter (9), ring flange (10),
Ni, Cr metallic diaphragm (11), ceramic substrate (12), specific structure be, A, shell (3) input terminal the first becket (3a) with it is defeated
Enter window (1) by low temperature indium stannum alloy solder sealing welding, the fifth metal ring (3i) and cmos image of shell (3) end sense
Ring flange (10) laser seal welding of device (4) signal output end component, thus input window (1), shell (3), signal output end
Three constitutes a closed tubular body；B, wherein photocathode (2) is coated in the effective district of input window (1) inner surface center,
Photocathode (2) is connected with Ni, Cr metallic diaphragm (11) of input window edge；C, microchannel plate (8) is installed by spring pressuring ring
Between the second becket (3c) and third becket (3e) of shell (3)；D, the 4th becket (3g) inner wall welds getter
(9)；E, the distance of microchannel plate (8) to photocathode (2) is the mm of 0.08 mm~0.2, and microchannel plate (8) to cmos image passes
The distance of sensor (4) is the mm of 0.3 mm~0.8；F, cmos image sensor (4) and ceramic substrate (12) are welded to connect, ceramics
Substrate and ring flange (10) are welded to connect by glass powder；G, cmos image sensor (4) output end and reading circuit (5) connect
It connects.
2. Miniaturization high-gain low-light (level) Image intensifier according to claim 1, it is characterised in that: shell (3) is
By the first ceramic ring (3b), the second ceramic ring (3d), third ceramic ring (3f), the 4th ceramic ring (3h) and the first becket
Cylinder made of (3a), the second becket (3c), third becket (3e), the 4th becket (3g), fifth metal ring (3i) soldering
Shape shell.
3. Miniaturization high-gain low-light (level) Image intensifier according to claim 1, it is characterised in that: photocathode
It (2) is potassium, the multialkali photocathode of sodium, caesium, antimony.
4. Miniaturization high-gain low-light (level) Image intensifier according to claim 1, it is characterised in that: microchannel plate
(8) input terminal plating is formed with Al2O3Thin-film material.
5. Miniaturization high-gain low-light (level) Image intensifier according to claim 1, it is characterised in that: getter
It (9) is niobium strip material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811469603.0A CN109547718B (en) | 2018-12-04 | 2018-12-04 | Miniaturized high-gain low-illumination night vision imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811469603.0A CN109547718B (en) | 2018-12-04 | 2018-12-04 | Miniaturized high-gain low-illumination night vision imaging device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109547718A true CN109547718A (en) | 2019-03-29 |
| CN109547718B CN109547718B (en) | 2020-11-27 |
Family
ID=65853602
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811469603.0A Active CN109547718B (en) | 2018-12-04 | 2018-12-04 | Miniaturized high-gain low-illumination night vision imaging device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111584331A (en) * | 2020-05-27 | 2020-08-25 | 北方夜视技术股份有限公司 | Method for reducing brightness of bright ring around image of light source lighted by image intensifier |
| CN112259438A (en) * | 2020-10-22 | 2021-01-22 | 中国建筑材料科学研究总院有限公司 | An input window and its preparation method and application |
| CN113163585A (en) * | 2021-04-29 | 2021-07-23 | 北方夜视技术股份有限公司 | Composite circuit board for realizing vacuum sealing and vacuum low-light-level imaging device |
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| CN201845736U (en) * | 2010-10-14 | 2011-05-25 | 北方夜视技术股份有限公司 | Miniature low-light-level image intensifier tube with effective diameter of 12mm |
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| CN103792004A (en) * | 2014-01-22 | 2014-05-14 | 中国科学院长春光学精密机械与物理研究所 | Ultraviolet spherical micro-channel plate photo counting and imaging detector |
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| CN1568532A (en) * | 2001-10-09 | 2005-01-19 | Itt制造企业公司 | Intensified hybrid solid-state sensor |
| CN101952932A (en) * | 2007-12-13 | 2011-01-19 | 法国甫托尼公司 | Close-coupled image intensifier tube and be equipped with the night vision system of image intensifier tube |
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| CN111584331A (en) * | 2020-05-27 | 2020-08-25 | 北方夜视技术股份有限公司 | Method for reducing brightness of bright ring around image of light source lighted by image intensifier |
| CN111584331B (en) * | 2020-05-27 | 2022-07-26 | 北方夜视技术股份有限公司 | Method for reducing brightness of bright ring around image of light source lighted by image intensifier |
| CN112259438A (en) * | 2020-10-22 | 2021-01-22 | 中国建筑材料科学研究总院有限公司 | An input window and its preparation method and application |
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| CN113163585A (en) * | 2021-04-29 | 2021-07-23 | 北方夜视技术股份有限公司 | Composite circuit board for realizing vacuum sealing and vacuum low-light-level imaging device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109547718B (en) | 2020-11-27 |
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