CN109541868B - Correction method, correction device and storage medium - Google Patents
Correction method, correction device and storage medium Download PDFInfo
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- CN109541868B CN109541868B CN201811640447.XA CN201811640447A CN109541868B CN 109541868 B CN109541868 B CN 109541868B CN 201811640447 A CN201811640447 A CN 201811640447A CN 109541868 B CN109541868 B CN 109541868B
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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Abstract
The invention provides a correction method, a correction device and a storage medium, wherein the method comprises the following steps: acquiring position information of a first pixel area where a defect is located, wherein the defect is generated by a voltage difference between a storage capacitance line and a signal line in a second metal layer connected with a pixel electrode in the first pixel area, and the storage capacitance line and the pixel electrode in the first pixel area form a storage capacitor; and controlling the laser welding device according to the position information to weld the two signal lines with the pressure difference in the first pixel region. In the invention, the signal wire is welded to the defect generated by the voltage difference between the storage capacitance wire in the array substrate and the signal wire in the second metal layer connected with the pixel electrode, so that the two signal wires with the voltage difference keep consistent in voltage, and the defect is corrected.
Description
Technical Field
The present invention relates to the field of substrate defect correction technologies, and in particular, to a correction method, apparatus, and storage medium.
Background
Liquid Crystal Displays (LCDs) have the characteristics of small size, low power consumption, no radiation and the like, and now occupy the leading position in the field of flat panel displays. The main structure of the liquid crystal display comprises an array substrate and a color film substrate which are boxed together and sandwich liquid crystal, wherein a grid line and a source line for providing scanning signals and a pixel electrode for forming pixel points are formed on the array substrate. The manufacturing process of the liquid crystal display mainly comprises an array process for manufacturing an array substrate and a color film substrate, a box forming process for box-aligning the array substrate and the color film substrate and injecting liquid crystal, and a subsequent module process.
In the prior art, if an insulating layer is disposed between a metal layer where a gate line in an array substrate is located and a metal layer where a common electrode line is located, when a voltage difference exists between the metal layer where the gate line is located and the metal layer where the common electrode line is located, a potential difference between the two metal layers is not 0, and then a pixel block, which should be displayed as a dark point in the array substrate, appears as a bright point, which results in a defective pixel point of a liquid crystal display.
Disclosure of Invention
The invention provides a correction method, a correction device and a storage medium, which are used for welding signal lines to defects generated by voltage difference between a storage capacitance line and a signal line connected with a pixel electrode in an array substrate, so that the voltage between two signal lines with the voltage difference is kept consistent, and further the defects are corrected.
A first aspect of the present invention provides a correction method, where the array substrate includes a pixel layer, a first metal layer, and a second metal layer, the pixel layer includes a plurality of pixel regions, each pixel region includes a pixel electrode, each pixel electrode is connected to a signal line in the second metal layer, the first metal layer includes a storage capacitor line therein, and the correction method includes:
acquiring position information of a first pixel region where a defect is located, the defect being generated by a voltage difference between the storage capacitance line and a signal line in the second metal layer connected to a pixel electrode in the first pixel region, the storage capacitance line and the pixel electrode in the first pixel region forming a storage capacitance;
and controlling a laser welding device according to the position information to weld the two signal lines with the pressure difference in the first pixel region.
Optionally, an insulating layer is arranged between the first metal layer and the second metal layer, and a through hole is reserved on the insulating layer in each pixel region; the position information comprises coordinates of the first pixel region on the array substrate and coordinates of a through hole of the first pixel region on the array substrate;
the controlling a laser welding device according to the position information to weld the two signal lines with the pressure difference in the first pixel region includes:
determining the first pixel area on the array substrate according to the coordinate of the first pixel area on the array substrate;
and welding the two signal lines of the first pixel region with the pressure difference at the coordinate position of the through hole of the first pixel region on the array substrate.
Optionally, the coordinates of the through hole of the first pixel region on the array substrate include: coordinates of the center position of the through hole of the first pixel region on the array substrate;
the welding of the two signal lines of the first pixel region where the voltage difference exists includes:
and welding the two signal lines of the first pixel region with the pressure difference at the coordinate of the central position of the through hole of the first pixel region on the array substrate.
Optionally, in the gravity direction, the second metal layer is located above the first metal layer, and before welding the two signal lines in the first pixel region where the voltage difference exists, the method further includes:
determining a welding point on the second metal layer according to the coordinate of the central position;
the welding of the two signal lines of the first pixel region where the voltage difference exists includes:
and welding the two signal lines with the pressure difference in the first pixel area according to the coordinates of the central position and the welding point.
Optionally, the determining a welding point on the second metal layer according to the coordinate of the center position includes:
and in the vertical direction, taking the projection position of the coordinate of the central position on the second metal layer as the welding point.
Optionally, after the fusing the two signal lines in the first pixel region where the voltage difference exists, the method further includes:
obtaining a first detection result of the array substrate after welding, wherein the first detection result is used for representing that the array substrate after welding still has defects;
and welding the welded defects in the array substrate again until a second detection result is obtained, wherein the second detection result is used for representing that the welded array substrate has no defects.
Optionally, the signal line in the second metal layer of the two signal lines with the voltage difference is: a drain line or a source line.
A second aspect of the present invention provides a correction device comprising:
a position information acquisition module for acquiring position information of a first pixel region where a defect is located, the defect being generated by a voltage difference between the storage capacitance line and a signal line in the second metal layer connected to a pixel electrode in the first pixel region, the storage capacitance line forming a storage capacitance with the pixel electrode in the first pixel region;
and the welding module is used for controlling the laser welding device according to the position information to weld the two signal lines with the pressure difference in the first pixel region.
Optionally, an insulating layer is arranged between the first metal layer and the second metal layer, and a through hole is reserved on the insulating layer in each pixel region; the position information comprises coordinates of the first pixel region on the array substrate and coordinates of a through hole of the first pixel region on the array substrate;
the welding module is specifically used for determining the first pixel area on the array substrate according to the coordinate of the first pixel area on the array substrate; and welding the two signal lines of the first pixel region with the pressure difference at the coordinate position of the through hole of the first pixel region on the array substrate.
Optionally, the coordinates of the through hole of the first pixel region on the array substrate include: coordinates of the center position of the through hole of the first pixel region on the array substrate;
the welding module is specifically configured to weld the two signal lines of the first pixel region, which have a pressure difference, at the coordinate of the center position of the through hole of the first pixel region on the array substrate.
Optionally, in the gravity direction, the second metal layer is located above the first metal layer.
Optionally, the apparatus further comprises: a welding point determining module;
and the welding point determining module is used for determining a welding point on the second metal layer according to the coordinate of the central position.
Optionally, the welding module is specifically configured to weld the two signal lines of the first pixel region, where the pressure difference exists, according to the coordinate of the center position and the welding point.
Optionally, the welding point determining module is specifically configured to use a projection position of the coordinate of the center position on the second metal layer in a vertical direction as the welding point.
Optionally, the apparatus further comprises: a detection result acquisition module;
the detection result acquisition module is used for acquiring a first detection result of the welded array substrate, and the first detection result is used for representing that the welded array substrate still has defects; and welding the welded defects in the array substrate again until a second detection result is obtained, wherein the second detection result is used for representing that the welded array substrate has no defects.
Optionally, the signal line in the second metal layer of the two signal lines with the voltage difference is: a drain line or a source line.
A third aspect of the present invention provides a correction device comprising: at least one processor and memory;
the memory stores computer-executable instructions;
the at least one processor executes computer-executable instructions stored by the memory to cause the correction device to perform the correction method described above.
A fourth aspect of the present invention provides a computer-readable storage medium having stored thereon computer-executable instructions that, when executed by a processor, implement the above-described correction method.
A fifth aspect of the present invention provides a correction system comprising: correction means, detection means and processing means; the processing device is respectively connected with the correcting device and the detecting device;
the detection device is used for detecting and acquiring a defect in the array substrate and position information of a first pixel region where the defect is located, and sending the position information to the processing device; the location information includes: coordinates of the first pixel region on the array substrate and coordinates of a via hole of the first pixel region on the array substrate, the array substrate including a pixel layer, a first metal layer and a second metal layer, the pixel layer including a plurality of pixel regions, each of the pixel regions including a pixel electrode, each of the pixel electrodes being connected to a signal line in the second metal layer, the first metal layer including a storage capacitance line therein, the defect being generated by a voltage difference between the storage capacitance line and a signal line in the second metal layer connected to a pixel electrode in the first pixel region, the storage capacitance line forming a storage capacitance with the pixel electrode in the first pixel region;
the processing device is used for acquiring the center coordinates of the through holes of the first pixel region on the array substrate according to position information, and sending the position information to the correcting device, wherein the position information comprises the center coordinates of the through holes of the first pixel region on the array substrate;
the correcting device is used for acquiring the position information and controlling the laser welding device according to the position information to weld the two signal lines with the pressure difference in the first pixel area.
The invention provides a correction method, a correction device and a storage medium, wherein the method comprises the following steps: acquiring position information of a first pixel area where a defect is located, wherein the defect is generated by a voltage difference between a storage capacitance line and a signal line in a second metal layer connected with a pixel electrode in the first pixel area, and the storage capacitance line and the pixel electrode in the first pixel area form a storage capacitor; and controlling the laser welding device according to the position information to weld the two signal lines with the pressure difference in the first pixel region. In the invention, the signal lines are welded to the defects generated by the voltage difference between the storage signal lines and the signal lines connected with the pixel electrodes in the array substrate, so that the two signal lines with the voltage difference are kept consistent in voltage, and the defects are corrected.
Drawings
Fig. 1 is a first schematic view illustrating a defect in an array substrate according to the present invention;
FIG. 2 is a first flowchart illustrating a correction method according to the present invention;
FIG. 3 is a second schematic view illustrating the existence of defects in the array substrate according to the present invention;
FIG. 4 is a second flowchart illustrating a correction method according to the present invention;
FIG. 5 is a cross-sectional view of the signal wire fusion splice provided by the present invention;
FIG. 6 is a third schematic flow chart of a correction method according to the present invention;
FIG. 7 is a schematic diagram of a connection of a correction system provided by the present invention;
FIG. 8 is a first schematic structural diagram of a correction device according to the present invention;
FIG. 9 is a second schematic structural diagram of a correction device according to the present invention;
fig. 10 is a schematic structural diagram of a correction device provided in the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The main structure of the liquid crystal display comprises an array substrate and a color film substrate which are boxed together and sandwich liquid crystal, wherein a grid line and a source line for providing scanning signals and a pixel electrode for forming pixel points are formed on the array substrate. Specifically, the array substrate comprises a pixel layer and a first metal layer and a second metal layer, wherein normally, the metal layer is arranged on the glass substrate, the pixel layer is arranged above the metal layer, and the size (width and length) of the metal layer and the size (width and length) of the pixel layer are equal.
Wherein each metal layer is provided with a signal line, illustratively, a first metal layer is provided with a source line and a drain line, and a second metal layer is provided with a gate line and a storage capacitor line; in the prior art, if a source line and a drain line are arranged in a first metal layer and are perpendicular to each other, and a gate line and a storage capacitor line are arranged in a second metal layer and are parallel to each other, further, the source line in the first metal layer is arranged perpendicular to the storage capacitor line in the second metal layer; specifically, a region where the gate line and the source line intersect is a pixel region in the pixel layer.
Fig. 1 is a schematic diagram showing a defect in an array substrate according to the first embodiment of the present invention, where as shown in fig. 1, a vertical signal line is a source line, and a horizontal signal line is a storage capacitor line, and in an actual situation, the storage capacitor line and the source line are located in different metal layers, for convenience of description, in fig. 1, the storage capacitor line and the source line are shown at a position corresponding to a pixel layer, and since a gate line and the storage capacitor line are arranged in parallel, an intersection region formed between the storage capacitor line and the source line in the corresponding drawing is a pixel region. The drain and gate lines are not shown in the figure. In fig. 1, the source lines are vertical black lines, and the storage capacitor lines are horizontal gray lines.
The pixel layer in the array substrate includes a plurality of pixel regions, each of the pixel regions includes a pixel electrode, and illustratively, the array substrate includes two metal layers, a first metal layer is provided with a source line and a drain line, a second metal layer is provided with a gate line and a storage capacitor line, each of the pixel electrodes may be connected to the gate line in the second metal layer or the source line in the first metal layer, and a specific connection manner may connect a signal line in the metal layer and the pixel electrode by means of a via hole.
It is conceivable that the correction method in the present embodiment is also applicable to the case where the pixel region is connected to the signal lines in the two metal layers.
Under normal conditions, a pixel area corresponding to the pixel electrode presents a dark spot under a preset voltage; however, when the voltage of the storage capacitor line is different from the voltage of the signal line connected to the pixel electrode, i.e., when a voltage difference exists, for example, when a voltage difference exists between the storage capacitor line and a source line connected to the pixel electrode, a pixel region corresponding to the pixel electrode is lit at a preset voltage, which results in poor display and defects in the pixel region in the array substrate.
In order to solve the above problems, the present invention provides a method for correcting an array substrate, in which two signal lines with a voltage difference are welded in a welding manner, so that the two signal lines in a defective pixel area are connected, and voltages corresponding to the two signal lines with a voltage difference are equal, thereby solving a problem that a pixel area displays a bright spot due to a voltage difference between the signal lines.
The correction method provided by the invention is applied to a correction system, and specifically, the correction system comprises the following steps: the following embodiments describe a correction device provided by the present invention, specifically, the correction device is taken as an execution subject.
The following describes the correction method provided by the present invention with reference to fig. 2, fig. 2 is a schematic flow chart of the correction method provided by the present invention, and an execution main body of the method flow shown in fig. 2 may be a correction device, and the correction device may be implemented by any software and/or hardware. As shown in fig. 2, the correction method provided in this embodiment may include:
s201, acquiring position information of a first pixel area where a defect is located, wherein the defect is generated by a voltage difference between a storage capacitance line and a signal line in a second metal layer connected with a pixel electrode in the first pixel area, and the storage capacitance line and the pixel electrode in the first pixel area form a storage capacitance.
The detection device in this embodiment is used to test the array substrate to obtain defects in the array substrate, where the defects in the array substrate may include multiple types, such as nuclear foreign matter, dark spots, bright spots, and the like. The detection device stores defect characteristics corresponding to various types of defects in advance, and classifies confirmations in the array substrate after all the defects in the array substrate are acquired. Illustratively, the defect type corresponding to the correction method in the present embodiment is the existence of a bright spot.
It is conceivable that there are various reasons for the bright point defect in the array substrate, and the detection device may obtain the generation reason of the bright point defect and obtain the defect corresponding to the preset reason, specifically, the preset reason for the defect in this embodiment is: a voltage difference exists between the storage capacitance line and the signal line in the second metal layer connected to the pixel electrode in the first pixel region. The detection device may obtain the defect corresponding to the preset reason in the embodiment by obtaining the voltage of the storage capacitor line in the pixel region corresponding to each bright point defect and the signal line in the second metal layer connected to the pixel electrode.
After the detection device acquires the defect with the preset reason, acquiring the position information of a first pixel region where the defect is located according to the position of the defect; specifically, the position information of the first pixel region where the defect is located may be coordinates of the first pixel region in the array substrate. After the detection device obtains the position information of the first pixel region where the defect is located, the detection device can directly send the position information to the correction device, so that the correction device obtains the position of the first pixel region where the defect is located; alternatively, the detection device may directly transmit the position information of the first pixel region where the defect is located to the processing device after acquiring the position information, and the detection device may further process the position information by the processing device and transmit the processed position information to the correction device.
The predetermined reason in this embodiment is that a voltage difference exists between the storage capacitor line and the signal line of the second metal layer connected to the pixel electrode in the first pixel region, specifically, the signal line of the second metal layer in this embodiment may be a source line or a drain line.
The first metal layer may include at least one storage capacitor line, and the storage capacitor line and the pixel electrode may form a storage capacitor CS, based on common knowledge. In the embodiment of the present application, the position of the defect is a first pixel region, and correspondingly, the storage capacitor line where a voltage difference exists between signal lines of a second metal layer connected to pixel electrodes in the first pixel region is: and a storage capacitance line forming a storage capacitance with the pixel electrode in the first pixel region.
And S202, controlling the laser welding device according to the position information, and welding the two signal lines with the pressure difference in the first pixel region.
In this embodiment, after the correction device obtains the position information of the first pixel region where the defect is located, it may be determined that the first pixel region where the defect exists in the array substrate, the storage capacitor line forming the storage capacitor with the pixel electrode of the pixel region, and a voltage difference exists between the signal lines connected to the pixel electrode of the pixel region.
As shown in fig. 1, two signal lines exemplarily shown in fig. 1 where a preset voltage difference exists are a storage capacitor line and a source line, the storage capacitor line and the source line are vertically disposed, and a pixel electrode in a first pixel region is connected to the source line, which is not shown in fig. 1; the first pixel region in the present embodiment exhibits a bright point defect, which is exemplarily indicated by black in fig. 1.
Fig. 3 is a schematic diagram of a defect existing in the array substrate provided by the present invention, as shown in fig. 3, two preset signal lines with a voltage difference are exemplarily shown as a storage capacitor line and a drain line, the storage capacitor line and the drain line are arranged in parallel, in practical cases, the position of the storage capacitor line in the second metal layer is the same as the position of the drain line in the first metal layer, and for convenience of explanation, the storage capacitor line and the drain line are shown in parallel in fig. 3; the pixel electrode in the first pixel region is connected with the drain line; the first pixel region in the present embodiment exhibits a bright point defect, which is exemplarily indicated by black in fig. 3. The horizontal gray lines in fig. 3 are storage capacitor lines and the horizontal grid lines are drain lines.
In this embodiment, the first pixel region having the defect may be determined according to the position information of the first pixel region where the defect is located; the correction device may be connected to a laser welder, and after the defective first pixel region is determined, the laser welder may be controlled to weld the two signal lines of the first pixel region where the pressure difference exists.
Illustratively, since the source line is connected to the pixel electrode in the first pixel region and the storage capacitor line and the source line are disposed vertically as shown in fig. 1, the storage capacitor line and the source line may be fused at a position where the storage capacitor line and the source line intersect in fig. 1, as shown at a position in fig. 1, in the vertical direction, to fuse the storage capacitor line and the source line. After the storage capacitor line and the source line are welded, the storage capacitor line and the source line are connected, and the corresponding voltages are equal, so that no voltage difference exists, and the bright spot defect is darkened.
Illustratively, since the drain line is connected to the pixel electrode in the first pixel region and the storage capacitance line and the drain line are arranged in parallel as shown in fig. 3, the storage capacitance line and the drain line may be fused at any position of the storage capacitance line and the drain line in fig. 3, as shown at positions B and C in fig. 3, in the vertical direction. After the storage capacitance line and the drain line are welded, the storage capacitance line and the drain line are connected, the corresponding voltages of the storage capacitance line and the drain line are equal, and no voltage difference exists, so that the bright spot defect is darkened.
The present embodiment provides a correction method, including: acquiring position information of a first pixel region where a defect is located, the defect being generated by a voltage difference between a storage capacitor line and a signal line in a second metal layer connected to a pixel electrode in the first pixel region; and controlling the laser welding device according to the position information to weld the two signal lines with the pressure difference in the first pixel region. In this embodiment, signal lines are fused to defects generated by a voltage difference between two signal lines in the array substrate, so that the two signal lines having the voltage difference are kept at the same voltage, and the defects are corrected.
Next, a welding process in the correction method provided by the present invention is described in detail with reference to fig. 4, where fig. 4 is a schematic flow chart of the correction method provided by the present invention, as shown in fig. 4, the correction method provided by this embodiment may include:
s401, position information of a first pixel area where the defect is located is obtained.
The defect in this embodiment is caused by a voltage difference between the storage capacitor line and the signal line in the second metal layer connected to the pixel electrode in the first pixel region, specifically, two signal lines of the first pixel region where the voltage difference exists are: storage capacitance line and drain-line, because storage capacitance line and drain-line parallel arrangement, the optional position that carries out the butt fusion between the two is many, and has better butt fusion effect.
Specifically, an insulating layer is arranged between the first metal layer and the second metal layer; fig. 5 is a schematic cross-sectional view of the signal line welding provided by the present invention, and as shown in fig. 5, an insulating layer 300 exists between the first metal layer 100 corresponding to the drain line and the second metal layer 200 corresponding to the storage capacitor line, and specifically, the insulating layer 300 may be a JAS insulating layer.
When the array substrate is prepared, a through hole is reserved at the corresponding position of the insulating layer in each pixel area; the position information comprises coordinates of the first pixel area on the array substrate and coordinates of the through hole of the first pixel area on the array substrate. Specifically, the coordinates of the first pixel region on the array substrate and the coordinates of the through hole of the first pixel region on the array substrate are obtained by the detection device when the array substrate is tested.
S402, determining a first pixel area on the array substrate according to the coordinate of the first pixel area on the array substrate.
In this embodiment, each array substrate is preset with a corresponding coordinate system, and after the coordinates of the first pixel region on the array substrate are obtained, the first pixel region may be determined on the array substrate according to the coordinates of the first pixel region on the array substrate and the preset corresponding coordinate system of the array substrate.
It is conceivable that the position information may also be identification information of the first pixel region on the array substrate, such as a pixel region number of the first pixel region on the array substrate, according to which the first pixel region is also determined on the array substrate.
And S403, welding the two signal lines with the pressure difference in the first pixel region at the coordinate position of the through hole of the first pixel region on the array substrate.
Specifically, welding two signal lines having a pressure difference refers to; controlling a laser welding device to melt a drain line corresponding to a first pixel region in the first metal layer 100, wherein the laser intensity is greater than the penetration intensity of the insulating layer 300, so that the melted drain line is connected with the storage capacitor line in the second metal layer 200; however, in the process of welding the signal lines by this method, the molten drain lines may be scattered when penetrating the insulating layer 300 due to excessive laser energy.
In this embodiment, to solve the problem, a through hole may be reserved in each pixel region in the insulating layer; after the correcting device acquires the position information of the first pixel region where the defect is located, the position of the through hole can be determined according to the coordinate of the through hole of the first pixel region on the array substrate; specifically, the welding between two signal lines where a pressure difference exists may be: and welding the two signal lines of the first pixel region with the pressure difference at the coordinate position of the through hole of the first pixel region on the array substrate.
It should be noted that the welding in this embodiment is to control a laser welding machine to melt the drain line corresponding to the first pixel region in the first metal layer 100, so that the melted drain line is connected to the storage capacitor line in the second metal layer 200 through the through hole, thereby avoiding the occurrence of the splashing phenomenon during the welding process.
Further, the coordinates of the through hole of the first pixel region on the array substrate in this embodiment include: the coordinates of the center position of the through hole of the first pixel region on the array substrate are coordinates of the center position of the through hole of the first pixel region on the array substrate, namely coordinates of the center of the through hole on the center position of the array substrate. Specifically, after acquiring the coordinates of the through hole of the first pixel region on the array substrate, the detecting device may send the coordinates of the through hole of the first pixel region on the array substrate to the processing device; the processing device in this embodiment is provided with a microscope, and the processing device controls the microscope to amplify the coordinates of the through hole in the first pixel region on the array substrate, so that the processing device obtains the coordinates of the center position of the through hole on the array substrate according to the amplified through hole, and sends the coordinates of the center position of the through hole on the array substrate to the correction device, so that the correction device obtains the coordinates of the center position of the through hole on the array substrate.
Specifically, the welding between two signal lines with a pressure difference in the present embodiment may be: and welding the two signal lines of the first pixel region with the pressure difference at the coordinate of the central position of the through hole of the first pixel region on the array substrate.
Further, in this embodiment, the second metal layer is located above the first metal layer in the gravity direction. After obtaining the coordinates of the center position of the through hole of the first pixel region on the array substrate, the welding point may be determined on the second metal layer according to the coordinates of the center position. Specifically, in the present embodiment, in the vertical direction, the projection position of the coordinate of the center position on the second metal layer is used as the welding point.
Specifically, the welding between two signal lines with a pressure difference in the present embodiment may be: and welding the two signal lines of the first pixel region, in which the pressure difference exists, according to the coordinates of the center position and the welding point.
Illustratively, as in the first metal layer 100 corresponding to the drain line, the same position as the coordinate of the central position of the through hole of the first pixel region on the array substrate is acquired as the fusion point; in the present embodiment, the laser welder is controlled to weld the drain lines in the first metal layer 100, and the fused drain lines are connected to the storage capacitor lines in the metal layer 300 through the through holes in the insulating layer 300.
The correcting device controls the laser welding device to align to the welding point in the metal layer and the position of the through hole, and after the position is aligned, the laser welding device is controlled to release energy, so that two signal lines with pressure difference are welded.
As shown in fig. 5, exemplarily, the drain line in the first metal layer 100 and the storage capacitor line in the second metal layer 200 are connected through an insulating layer 300; specifically, the drain line in which the first metal layer 100 is melted through the shaded portion of the through-hole.
In this embodiment, an insulating layer is present between metal layers corresponding to two signal lines of a first pixel region where a voltage difference exists, and a through hole is reserved in each pixel region at a corresponding position of the insulating layer; the position information comprises coordinates of the first pixel area on the array substrate and coordinates of the through hole of the first pixel area on the array substrate; further, the coordinates of the through hole of the first pixel region on the array substrate include: coordinates of the center position of the through hole of the first pixel region on the array substrate; according to the coordinates of the central position, determining a welding point on the metal layers corresponding to the two signal lines with the pressure difference in the first pixel area; and welding the two signal lines of the first pixel region, in which the pressure difference exists, according to the coordinates of the center position and the welding point. The correction method provided by the embodiment not only enables the voltage between the two signal lines with the pressure difference to be consistent, realizes the correction of the defects, but also avoids the splashing phenomenon in the welding process.
The following further describes the correction method provided by the present invention with reference to fig. 6, where fig. 6 is a third schematic flow chart of the correction method provided by the present invention, as shown in fig. 6, the correction method provided by this embodiment may include:
s601, acquiring the position information of the first pixel region where the defect is located.
S602, determining a first pixel area on the array substrate according to the coordinates of the first pixel area on the array substrate.
And S603, welding the two signal lines with the pressure difference in the first pixel region at the coordinate position of the through hole of the first pixel region on the array substrate.
S604, obtaining a first detection result of the welded array substrate, wherein the first detection result is used for representing that the welded array substrate still has defects.
In this embodiment, after performing corresponding welding processing on a first pixel region corresponding to a defect in the array substrate, the detection device may further perform defect testing on the welded array substrate to obtain a first detection result of the welded array substrate; further, the first detection result is sent to a correction device, and specifically, the first detection result is used for representing that the welded array substrate still has defects.
It is conceivable that the defect in the first detection result is a defect satisfying a preset defect cause that a voltage difference exists between the storage capacitance line and the signal line in the second metal layer connected to the pixel electrode in the first pixel region; further, the first detection result further includes position information of the first pixel region where the defect is located, where the position information may be the same as the position information of the first pixel region where the defect is located in the above embodiment.
Further, the detection device may send the first detection result to the processing device, and the processing device sends the first detection result to the correction device after processing the first detection result, where the processing procedure may be the same as the processing procedure in the above implementation, and details are not described here.
And S605, re-welding the defects in the welded array substrate until a second detection result is obtained, wherein the second detection result is used for representing that the welded array substrate has no defects.
In this embodiment, after the correction device obtains the first detection result, the defect in the array substrate after being welded is welded again by the same method as in the above embodiment according to the position information of the first pixel region where the defect is located. And the correction device determines that no defect exists in the array substrate, and the correction is finished.
The implementation manners in S601-S603 in this embodiment may specifically refer to the relevant descriptions in S401-S403 in the above embodiments, and are not limited herein.
In this embodiment, obtain the first testing result of array substrate after the butt fusion, first testing result is used for the array substrate after the sign butt fusion still has the defect, carries out the butt fusion again to the defect in the array substrate after the butt fusion until obtaining the second testing result, and the second testing result is used for the array substrate after the sign butt fusion not to have the defect. The correction method provided by the embodiment can be used for completely correcting the defects in the array substrate, so that the yield of the array substrate is improved.
Further, fig. 7 is a schematic connection diagram of a correction system provided by the present invention, as shown in fig. 7, the present invention further provides a correction system 700, specifically, the correction system 700 includes: a correction device 703, a detection device 701, and a processing device 702; the processing device 702 is connected to the correction device 703 and the detection device 701, respectively.
The detection device 701 is used for detecting and acquiring a defect in the array substrate and position information of a first pixel region where the defect is located, and sending the position information to the processing device 702; the location information includes: the array substrate comprises a pixel layer and at least two metal layers, the pixel layer comprises a plurality of pixel regions, each pixel region comprises a pixel electrode, each pixel electrode is connected with a signal line in a second metal layer, a storage capacitance line is arranged in the first metal layer, defects are generated by voltage difference between the storage capacitance line in the first metal layer and the signal line in the second metal layer connected with the pixel electrode in the first pixel region, and the storage capacitance line and the pixel electrode in the first pixel region form a storage capacitance.
The processing device 702 is configured to obtain center coordinates of the through hole of the first pixel region on the array substrate according to the position information, and send the position information to the correcting device 703, where the position information includes the center coordinates of the through hole of the first pixel region on the array substrate.
The correction device 703 is configured to acquire position information and weld the two signal lines having the pressure difference in the first pixel region according to the position information. Specifically, the specific manner of welding the two signal lines having the pressure difference in the first pixel region by the correction device 703 according to the position information is the same as the correction manner and effect in the above embodiment, and details are not repeated here.
Fig. 8 is a schematic structural diagram of a first correction device provided in the present invention, as shown in fig. 8, the correction device 800 includes: a position information acquisition module 801 and a fusion module 802.
A position information obtaining module 801, configured to obtain position information of a first pixel region where a defect is located, where the defect is generated by a voltage difference between a storage capacitor line and a signal line in a second metal layer connected to a pixel electrode in the first pixel region, and the storage capacitor line and the pixel electrode in the first pixel region form a storage capacitor.
And a welding module 802, configured to control the laser welder to weld the two signal lines with the pressure difference in the first pixel region according to the position information.
The principle and technical effect of the correction device provided in this embodiment are similar to those of the correction method, and are not described herein again.
Optionally, fig. 9 is a schematic structural diagram of a second correction device provided in the present invention, and as shown in fig. 9, the correction device 800 further includes: a fusion point determining module 803 and a detection result obtaining module 804.
Optionally, an insulating layer is arranged between the first metal layer and the second metal layer, and a through hole is reserved on the insulating layer in each pixel region; the position information includes coordinates of the first pixel region on the array substrate and coordinates of the through hole of the first pixel region on the array substrate.
The welding module 802 is specifically configured to determine a first pixel region on the array substrate according to a coordinate of the first pixel region on the array substrate; and welding the two signal lines of the first pixel region with the pressure difference at the coordinate position of the through hole of the first pixel region on the array substrate.
Optionally, the coordinates of the through hole of the first pixel region on the array substrate include: and coordinates of a center position of the through hole of the first pixel region on the array substrate.
The welding module 802 is specifically configured to weld the two signal lines of the first pixel region, where the pressure difference exists, at the coordinate of the center position of the through hole of the first pixel region on the array substrate.
Optionally, the apparatus further comprises: a welding point determining module;
and a welding point determining module 803, configured to determine a welding point on the second metal layer according to the coordinates of the center position.
Optionally, the welding module 802 is specifically configured to weld the two signal lines in the first pixel region, where the pressure difference exists, according to the coordinates of the center position and the welding point.
Optionally, the welding point determining module 803 is specifically configured to use a projection position of the coordinate of the center position on the second metal layer in the vertical direction as the welding point.
A detection result obtaining module 804, configured to obtain a first detection result of the welded array substrate, where the first detection result is used to represent that the welded array substrate still has a defect; and welding the defects in the welded array substrate again until a second detection result is obtained, wherein the second detection result is used for representing that the welded array substrate has no defects.
Optionally, the signal line in the second metal layer of the two signal lines where the voltage difference exists is: a drain line or a source line.
Fig. 10 is a schematic structural diagram of a third correction device provided in the present invention, as shown in fig. 10, the correction device 1000 includes: a memory 1001 and at least one processor 1002.
The processor 1002 is configured to implement the correction method in this embodiment when the program instructions are executed, and specific implementation principles may be referred to in the foregoing embodiments, which are not described herein again.
The correction device 1000 may further include an input/output interface 1003.
The input/output interface 1003 may include a separate output interface and input interface, or may be an integrated interface that integrates input and output. The output interface is used for outputting data, the input interface is used for acquiring input data, the output data is a general name output in the method embodiment, and the input data is a general name input in the method embodiment.
The invention also provides a readable storage medium, which stores an execution instruction, and when at least one processor of the correction device executes the execution instruction, the computer execution instruction is executed by the processor to realize the correction method in the above embodiment.
The present invention also provides a program product comprising execution instructions stored in a readable storage medium. The at least one processor of the correction device may read the execution instruction from the readable storage medium, and the execution of the execution instruction by the at least one processor causes the correction device to implement the correction method provided by the various embodiments described above.
In the embodiments provided in the present invention, it should be understood that the disclosed apparatus and method may be implemented in other ways. For example, the above-described apparatus embodiments are merely illustrative, and for example, the division of the units is only one logical division, and other divisions may be realized in practice, for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or units, and may be in an electrical, mechanical or other form.
The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
In addition, functional units in the embodiments of the present invention may be integrated into one processing unit, or each unit may exist alone physically, or two or more units are integrated into one unit. The integrated unit can be realized in a form of hardware, or in a form of hardware plus a software functional unit.
The integrated unit implemented in the form of a software functional unit may be stored in a computer readable storage medium. The software functional unit is stored in a storage medium and includes several instructions to enable a computer device (which may be a personal computer, a server, or a network device) or a processor (processor) to execute some steps of the methods according to the embodiments of the present invention. And the aforementioned storage medium includes: a U disk, a removable hard disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk or an optical disk, and other various media capable of storing program codes.
In the embodiment of the network device or the vehicle-side device, it should be understood that the Processor may be a Central Processing Unit (CPU), other general-purpose processors, a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), etc. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like. The steps of a method disclosed in connection with the present application may be embodied directly in a hardware processor, or in a combination of the hardware and software modules in the processor.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (9)
1. A correction method applied to an array substrate, the array substrate including a pixel layer, a first metal layer and a second metal layer, the pixel layer including a plurality of pixel regions, each of the pixel regions including a pixel electrode, each of the pixel electrodes being connected to a signal line in the first metal layer, the second metal layer including a storage capacitor line, the correction method comprising:
acquiring position information of a first pixel region where a defect is located, the defect being generated by a voltage difference between the storage capacitance line and a signal line in the first metal layer connected to a pixel electrode in the first pixel region, the storage capacitance line and the pixel electrode in the first pixel region forming a storage capacitance;
controlling a laser welding device according to the position information to weld the storage capacitance line with the pressure difference in the first pixel area and the signal line in the first metal layer;
an insulating layer is arranged between the first metal layer and the second metal layer, and a through hole is reserved on the insulating layer in each pixel area; the position information comprises coordinates of the first pixel region on the array substrate and coordinates of a through hole of the first pixel region on the array substrate;
the controlling a laser welding device to weld the storage capacitance line with the pressure difference in the first pixel region and the signal line in the first metal layer according to the position information includes:
determining the first pixel area on the array substrate according to the coordinate of the first pixel area on the array substrate;
and welding the storage capacitance line with the pressure difference in the first pixel region and the signal line in the first metal layer at the coordinate of the through hole of the first pixel region on the array substrate.
2. The method of claim 1, wherein the coordinates of the via of the first pixel region on the array substrate comprise: coordinates of the center position of the through hole of the first pixel region on the array substrate;
the fusing of the storage capacitor line having a voltage difference in the first pixel region and the signal line in the first metal layer includes:
and welding the storage capacitance line with the pressure difference in the first pixel region and the signal line in the first metal layer at the coordinate of the central position of the through hole of the first pixel region on the array substrate.
3. The method according to claim 2, wherein the first metal layer is located above the second metal layer in a gravity direction, and before the fusing the storage capacitor line of the first pixel region where the voltage difference exists and the signal line in the first metal layer, the method further comprises:
determining a welding point on the second metal layer according to the coordinate of the central position;
the fusing of the storage capacitor line having a voltage difference in the first pixel region and the signal line in the first metal layer includes:
and welding the storage capacitance line with the pressure difference in the first pixel area and the signal line in the first metal layer according to the coordinates of the central position and the welding point.
4. A method according to claim 3, wherein said determining a weld point on said second metal layer based on coordinates of said center position comprises:
and in the vertical direction, taking the projection position of the coordinate of the central position on the second metal layer as the welding point.
5. The method according to claim 1, wherein after the fusing the storage capacitor line having the voltage difference of the first pixel region and the signal line in the first metal layer, further comprising:
obtaining a first detection result of the array substrate after welding, wherein the first detection result is used for representing that the array substrate after welding still has defects;
and welding the welded defects in the array substrate again until a second detection result is obtained, wherein the second detection result is used for representing that the welded array substrate has no defects.
6. The method according to any one of claims 1 to 5, wherein the signal line in the first metal layer of the storage capacitance line and the signal line in the first metal layer in which the voltage difference exists is: a drain line or a source line.
7. A correction device, characterized by comprising: at least one processor and memory;
the memory stores computer-executable instructions;
the at least one processor executing the computer-executable instructions stored by the memory causes the revision device to perform the method of any of claims 1-6.
8. A computer-readable storage medium having computer-executable instructions stored thereon which, when executed by a processor, implement the method of any one of claims 1-6.
9. A correction system, comprising: correction means, detection means and processing means; the processing device is respectively connected with the correcting device and the detecting device;
the detection device is used for detecting and acquiring a defect in the array substrate and position information of a first pixel region where the defect is located, and sending the position information to the processing device; the location information includes: coordinates of the first pixel region on the array substrate and coordinates of a via hole of the first pixel region on the array substrate, the array substrate including a pixel layer, a first metal layer, and a second metal layer, the pixel layer including a plurality of pixel regions, each of the pixel regions including a pixel electrode, each of the pixel electrodes being connected to a signal line in the first metal layer, the second metal layer including a storage capacitance line therein, the defect being generated by a voltage difference between the storage capacitance line and the signal line in the first metal layer connected to the pixel electrode in the first pixel region, the storage capacitance line forming a storage capacitance with the pixel electrode in the first pixel region;
the processing device is used for acquiring the center coordinates of the through holes of the first pixel region on the array substrate according to position information, and sending the position information to the correcting device, wherein the position information comprises the center coordinates of the through holes of the first pixel region on the array substrate;
the correcting device is used for acquiring the position information, controlling a laser welding device according to the position information, and welding the storage capacitance line with the pressure difference in the first pixel area and the signal line in the first metal layer;
an insulating layer is arranged between the first metal layer and the second metal layer, and a through hole is reserved on the insulating layer in each pixel area; the position information comprises coordinates of the first pixel region on the array substrate and coordinates of a through hole of the first pixel region on the array substrate;
the correction device is specifically configured to determine the first pixel region on the array substrate according to the coordinate of the first pixel region on the array substrate; and welding the storage capacitance line with the pressure difference in the first pixel region and the signal line in the first metal layer at the coordinate of the through hole of the first pixel region on the array substrate.
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Address after: No. 1778, Qinglan Road, Huangjia Street, Shuangliu District, Chengdu, Sichuan 610200 Patentee after: Chengdu BOE Display Technology Co.,Ltd. Country or region after: China Address before: No. 1778, Qinglan Road, Gongxing street, Shuangliu District, Chengdu, Sichuan 610200 Patentee before: CHENGDU ZHONGDIAN PANDA DISPLAY TECHNOLOGY Co.,Ltd. Country or region before: China |