CN109524456A - Silicon carbide Ohm contact production method and silicon carbide power device suitable for high temperature - Google Patents
Silicon carbide Ohm contact production method and silicon carbide power device suitable for high temperature Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
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- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
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Abstract
本发明提供了一种适用于高温的碳化硅欧姆接触制作方法及碳化硅功率器件，属于半导体器件制作技术领域，包括以下步骤：清洗碳化硅圆片；光刻定义欧姆接触区域；在碳化硅圆片表面沉积多层金属，所述多层金属依次为镍、钨，或者为，镍、铌；金属剥离，制备金属电极；欧姆接触退火形成欧姆接触电极。本发明提供的适用于高温的碳化硅欧姆接触制作方法，欧姆接触电极的表面形貌平整，无碳颗粒析出，并且在高温下欧姆接触性能不发生退化。
The invention provides a silicon carbide ohmic contact fabrication method suitable for high temperature and a silicon carbide power device, belonging to the technical field of semiconductor device fabrication, comprising the following steps: cleaning a silicon carbide wafer; defining an ohmic contact area by photolithography; Multilayer metals are deposited on the surface of the sheet, and the multilayer metals are nickel, tungsten, or nickel and niobium in sequence; the metal is peeled off to prepare a metal electrode; and the ohmic contact electrode is formed by ohmic contact annealing. According to the method for manufacturing silicon carbide ohmic contact suitable for high temperature provided by the invention, the surface morphology of the ohmic contact electrode is smooth, no carbon particles are precipitated, and the ohmic contact performance does not degrade at high temperature.
Description
Technical field
The invention belongs to semiconductor devices manufacture technology fields, are to be related to a kind of carbon suitable for high temperature more specifically
SiClx Ohm contact production method and silicon carbide power device.
Background technique
It is after with silicon (Si) currently, being the semiconductor material with wide forbidden band of representative with silicon carbide (SiC) and gallium nitride (GaN)
After being the first generation of representative, second generation semiconductor material with GaAs (GaAs), the novel semi-conductor material that develops rapidly
Material.SiC base semiconductor material has that forbidden bandwidth is big, thermal conductivity is high, disruptive field intensity is high, electronics saturation drift velocity height etc. is excellent
Point is particularly suitable for making high-power, high frequency, High temperature semiconductor device.SiC power device technology is a strategic high-new skill
Art has extremely important value, therefore obtains the extensive concern of lot of domestic and foreign semiconductor company and research institution and go deep into
Research, becomes one of new material, microelectronics and hot spot of field of power electronics research in the world.SiC material is in high temperature, high-power
With the critical process of high-frequency semiconductor device field application first is that need to prepare high stability and low-resistance Ohmic contact, and
And contact will have good mechanical property and degeneration ability, stablize its performance in subsequent technique production and use process
Reliably.What N-type SiC was generally chosen is that alloy system based on Ni is deposited on high temperature on the SiC of heavy doping and quickly moves back
Fire realizes Ohmic contact, and alloy temperature is generally more than 900 DEG C.Although Ni has obtained more satisfactory ratio contact for Ohmic contact
Resistivity, but still that there are contact interfaces is coarse, easily formed it is carbon-gathered, under high temperature the problems such as ohm contact degradation.
Summary of the invention
It is existing to solve the purpose of the present invention is to provide a kind of silicon carbide Ohm contact production method suitable for high temperature
Contact interface present in technology is coarse, easily forms the technical problems such as ohm contact degradation under carbon-gathered and high temperature.
To achieve the above object, the technical solution adopted by the present invention is that: a kind of silicon carbide ohm suitable for high temperature is provided
Contact for producing method, comprising the following steps:
Cleaning sic disk；
Lithographic definition ohmic contact regions；
Multiple layer metal is deposited on silicon carbide wafers surface, the multiple layer metal is followed successively by nickel, tungsten, Huo Zhewei, nickel, niobium；
Metal-stripping prepares metal electrode；
Ohmic contact anneals to form Ohm contact electrode.
Further, the process of the cleaning sic disk are as follows:
Using the RCA cleaning method of standard, silicon carbide wafers are cleaned, remove silicon carbide wafers surface contamination.
Further, the process of the lithographic definition ohmic contact regions are as follows:
A layer photoresist is coated on silicon carbide wafers surface, the region for needing to make Ohm contact electrode is exposed aobvious
Shadow exposes silicon carbide.
Further, the photoresist is with a thickness of 0.3 μm of -5um.
Further, the process in silicon carbide wafers surface deposition multiple layer metal are as follows:
Using evaporation or sputtering method deposit multiple layer metal, the nickel with a thickness of 30nm-200nm, the tungsten or niobium
With a thickness of 20nm-100nm.
Further, the nickel with a thickness of 50nm-150nm, the tungsten or niobium with a thickness of 40nm-80nm.
Further, the metal-stripping prepares the process of metal electrode are as follows:
Silicon carbide wafers are impregnated in organic solvent after metal deposit, removal photoresist and deposition on a photoresist more
Remaining metal, only retain required for metallic electrode portion, in organic solvent by metal removal it is clean after, use deionized water pair
Silicon carbide wafers are rinsed.
Further, the Ohmic contact anneals to form the process of Ohm contact electrode are as follows:
Short annealing is carried out to silicon carbide wafers using quick anneal oven, atmosphere is argon gas or nitrogen, annealing temperature
Degree is 950 DEG C -1050 DEG C, and constant temperature time is -120 seconds 30 seconds.
Further, the annealing temperature is 900 DEG C -1000 DEG C, and constant temperature time is -90 seconds 60 seconds.
The beneficial effect of silicon carbide Ohm contact production method provided by the invention suitable for high temperature is: with existing skill
Art is compared, and the present invention is suitable for the silicon carbide Ohm contact production method of high temperature, is made using the metal system of Ni/W or Ni/Nb
For Ohm contact electrode, in alloy, Ni is reacted with SiC generates Ni2It, can be obvious after the precipitation of Si, C particle in conjunction with W or Nb
The Ohm contact electrode surface topography of carbon particle precipitating metal superficial phenomenon when reducing short annealing in SiC disk, preparation is flat
It is whole, and Ohm contact electrode ohmic contact resistance under hot operation is not susceptible to degenerate.
Another object of the present invention is to provide a kind of silicon carbide power device, sharp to prepare with the aforedescribed process, including carbonization
Silicon wafer and the Ohm contact electrode being prepared on the silicon carbide wafers, the Ohm contact electrode includes metal nickel layer and tungsten
Layer, Huo Zhewei, nickel layer and niobium layer.
The beneficial effect that the present invention provides a kind of silicon carbide power device is: the gold due to using Ni/W or Ni/Nb
For category system as Ohm contact electrode, in alloy, Ni is reacted with SiC generates Ni2After the precipitation of Si, C particle in conjunction with W or Nb,
Carbon particle precipitating metal superficial phenomenon when can significantly reduce short annealing in SiC disk, no carbon particle are precipitated, the Europe of preparation
It is smooth that nurse contacts electrode surface pattern, and Ohm contact electrode ohmic contact resistance under hot operation is not susceptible to degenerate,
Improve the reliability of device performance.
Detailed description of the invention
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to embodiment or description of the prior art
Needed in attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description is only of the invention some
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is after the photoetching process provided in an embodiment of the present invention suitable for the silicon carbide Ohm contact production method of high temperature
The schematic diagram of silicon carbide wafers；
Fig. 2 is after the metal deposit provided in an embodiment of the present invention suitable for the silicon carbide Ohm contact production method of high temperature
Schematic diagram；
Fig. 3 is the Ohmic contact electricity of the silicon carbide Ohm contact production method provided in an embodiment of the present invention suitable for high temperature
Pole complete after schematic diagram.
Wherein, each appended drawing reference in figure:
1- silicon carbide wafers；2- photoresist；3- multiple layer metal.
Specific embodiment
In order to which technical problems, technical solutions and advantages to be solved are more clearly understood, tie below
Accompanying drawings and embodiments are closed, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only
To explain the present invention, it is not intended to limit the present invention.
Embodiment 1
Also referring to Fig. 1 to Fig. 3, now to the silicon carbide Ohm contact production method provided by the invention suitable for high temperature
It is illustrated.The silicon carbide Ohm contact production method suitable for high temperature, comprising the following steps:
Step 1: cleaning sic disk 1；
Step 2: lithographic definition ohmic contact regions；
Step 3: multiple layer metal 3 is deposited on 1 surface of silicon carbide wafers, the multiple layer metal 3 is followed successively by nickel, tungsten, Huo Zhewei,
Nickel, niobium；
Step 4: metal-stripping prepares metal electrode；
Step 5: Ohmic contact anneals to form Ohm contact electrode.
Silicon carbide Ohm contact production method provided by the invention suitable for high temperature uses Ni/ compared with prior art
For the metal system of W or Ni/Nb as Ohm contact electrode, in alloy, Ni is reacted with SiC generates Ni2After Si, C particle are precipitated
In conjunction with W or Nb, carbon particle precipitating metal superficial phenomenon when can significantly reduce short annealing in SiC disk, and Europe
Nurse contact electrode ohmic contact resistance under hot operation is not susceptible to degenerate.Solves contact interface existing in the prior art
It is coarse, it is easily formed carbon-gathered, under high temperature the problems such as ohm contact degradation, can prepared with high stability and low-resistance ohm
Contact, and contact with good mechanical property and degeneration ability, performance is steady in subsequent technique production and use process
It is fixed reliable.
The purpose of the present invention: the production method for proposing a kind of new high temperature resistant SiC ohmic contact electrode is a kind of new Europe
Nurse contacts method for making its electrode.
Purposes of the invention: the production of the SiC ohmic contact electrode for microelectronic field is primarily adapted for use in SiC SBD
The system of (SchottkyBarrierDiode, Schottky barrier diode), SiC JBS (Junction Barrier Schottky) diode component
Standby and SiC MOSFET (metal-oxide half field effect transistor Metal-Oxide-Semiconductor Field-Effect
Transistor-MOSFET), SiC IGBT (IGBT-Insulated Gate Bipolar Transistor, insulated gate bipolar
Transistor npn npn) etc. similar types device preparation.
The effect reached of the invention: Ohm contact electrode can be smooth with surface topography, and no carbon particle is precipitated, and in height
The production method for the N-type SiC ohmic contact deposit that the lower ohm contact performance of temperature is not degenerated.
Inventive point of the invention: use the metal system of Ni/W or Ni/Nb as Ohm contact electrode, the Ni in alloy
It is reacted with SiC and generates Ni2Si, after the precipitation of C particle in conjunction with W or Nb, when can significantly reduce short annealing in SiC disk
Carbon particle precipitating metal superficial phenomenon, and Ohm contact electrode ohmic contact resistance under hot operation is not susceptible to degenerate.
Embodiment 2
Step 1: it cleans before photoetching, using the RCA cleaning method of standard, silicon carbide wafers 1 is cleaned, removal carbonization
Silicon wafer surface contamination.
Step 2: lithographic definition ohmic contact regions coat a layer photoresist 2 on 1 surface of silicon carbide wafers, and photoresist is thick
Degree is 0.3 μm of -5um, and the region for needing to make electrode is exposed development, exposes silicon carbide, as shown in Fig. 1.
Step 3: metal deposit, disk surfaces using evaporation or sputtering method deposit multiple layer metal 3, multiple layer metal according to
Secondary is Ni, W or Ni, Nb.Wherein Ni with a thickness of 30nm-200nm, W or Nb with a thickness of 20nm-100nm, such as 2 institute of attached drawing
Show.
Step 4: metal-stripping impregnates silicon carbide wafers in organic solvent after metal deposit, removal photoresist and heavy
The excess metal of product on a photoresist, metallic electrode portion required for only retaining.It is in organic solvent that metal removal is clean
Disk is rinsed using deionized water afterwards, as shown in Fig. 3.
Step 5: Ohmic contact annealing, using quick anneal oven to disk carry out short annealing, atmosphere be argon gas or
Person's nitrogen, annealing temperature are 950 DEG C -1050 DEG C, and constant temperature time is -2 minutes 30 seconds.Ohm contact electrode after the completion of short annealing
I.e. production finishes.
Refering to fig. 1, specific as one kind of the silicon carbide Ohm contact production method provided by the invention suitable for high temperature
Embodiment, the photoresist thickness can also be 1 μm, 1.5um, 2um, 3um, 4.5um etc., no longer enumerated here.
Referring to Fig. 2, a kind of tool as the silicon carbide Ohm contact production method provided by the invention suitable for high temperature
Body embodiment, the nickel with a thickness of 30nm-200nm, the tungsten or niobium with a thickness of 20nm-100nm.
Referring to Fig. 2, a kind of tool as the silicon carbide Ohm contact production method provided by the invention suitable for high temperature
Body embodiment, the nickel with a thickness of 50nm-150nm, the tungsten or niobium with a thickness of 40nm-80nm.The thickness of the nickel
It can also be 40nm, 60nm, 65nm, 70nm, 80nm, 90nm, 100nm, 120nm, 160nm, 180nm etc., no longer enumerated here；
The thickness of the tungsten or niobium can also be 30nm, 50nm, 60nm, 70nm, 90nm, 95nm etc., no longer enumerated here.
Referring to Fig. 3, a kind of tool as the silicon carbide Ohm contact production method provided by the invention suitable for high temperature
Body embodiment, the annealing temperature are 900 DEG C -1000 DEG C, and constant temperature time is -90 seconds 60 seconds.Wherein annealing temperature can be with
For 960 DEG C, 970 DEG C, 980 DEG C, 990 DEG C, constant temperature time is also an option that as 40 seconds, 50 seconds, 70 seconds, 80 seconds, 100 seconds, 110
Second.Suitable parameter is selected as the case may be.
Referring to Fig. 3, another object of the present invention is to provide a kind of silicon carbide power device, and benefit is prepared with the aforedescribed process,
Including silicon carbide wafers and the Ohm contact electrode being prepared on the silicon carbide wafers, the Ohm contact electrode includes metal
Nickel layer and tungsten layer, Huo Zhewei, nickel layer and niobium layer.
The beneficial effect that the present invention provides a kind of silicon carbide power device is: the gold due to using Ni/W or Ni/Nb
For category system as Ohm contact electrode, in alloy, Ni is reacted with SiC generates Ni2After the precipitation of Si, C particle in conjunction with W or Nb,
Carbon particle precipitating metal superficial phenomenon when can significantly reduce short annealing in SiC disk, no carbon particle are precipitated, the device of preparation
Part surface topography is smooth, and Ohm contact electrode ohmic contact resistance under hot operation is not susceptible to degenerate, and improves device
The reliability of part performance.
The device prepared using method provided by the invention, the economic benefit of prediction are as follows:
By the optimization to SiC device ohmic contact craft, can be precipitated to avoid carbon when short annealing in SiC disk existing
As, and Ohm contact electrode is not susceptible to degenerate under hot operation and promotes ohmic contact craft stability.It simplifies simultaneously
Process flow keeps SiC device production time-consuming shorter, and processing step is more succinct, greatly reduces technique cost of manufacture.Due to technique
Simplify, to energy consumption is reduced, especially reduces the heat budget of chip manufacturing, there is positive effect.The raising of device performance, it is right
Low-carbon economy development also plays impetus, and the economic and social profit generated can not despise.
RCA cleaning method is illustrated below, steps are as follows for the standard cleaning of semicon industry silicon wafer:
It prepares hydrofluoric acid solution (ratio 1:20)；
Silicon-wafer holder cleaning, drying are stand-by；
It takes silicon wafer to be put on bracket, puts well in sequence；
With 3# liquid (sulfuric acid: H2O2=3:1, this 660ml:220ml), sulfuric acid finally adds, while another container is to boil water；
It is boiled and is washed with 3# liquid, 15min is heated to 250 DEG C, has carried bracket slightly cool a moment；
Bracket is put into hot water, is washed by water；
Prepare 1# liquid (ammonium hydroxide: H2O2: H2O=1:1:5-1:1:7), the above two are poured into hot water, heat 75-85 DEG C, the time
10-20min (time can not be too long, because ammonium hydroxide has corrosiveness to silicon, removes removing heavy-metal impurities using complexing) takes out
Silicon-wafer holder is put into 1# liquid, 15min, and taking-up is put into hot water, washes by water；
Prepare 2# liquid (HCl:H2O2: H2O=1:1:5), the above two are poured into hot water；
Silicon wafer is taken out, 2# liquid is put into, 15min takes out in putting hot water, bath；
10% hydrofluoric acid (1:20), time 5-10s remove silicon surface oxidation layer；
Deionized water washing time 20min.
Wherein, RCA standard cleaning method is that RCA of the nineteen sixty-five by Kern and Puotinen et al. in N.J.Princeton is real
It tests what room was initiated, and gains the name therefrom.RCA is that one kind is typical, is so far still the wet chemical cleans method most generally used.
The general thinking of cleaning is the organic contaminations for removing silicon chip surface first, because organic matter can covering part silicon wafer table
Then oxidation film is dissolved so that oxidation film and associated contamination be made to be difficult to remove in face, because oxide layer is to stain trap,
Also epitaxy defect can be introduced, finally removes the contamination such as particle, metal again, while be passivated silicon chip surface.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (10)
1. being suitable for the silicon carbide Ohm contact production method of high temperature, which comprises the following steps:
Cleaning sic disk；
Lithographic definition ohmic contact regions；
Multiple layer metal is deposited on silicon carbide wafers surface, the multiple layer metal is followed successively by nickel, tungsten, Huo Zhewei, nickel, niobium；
Metal-stripping prepares metal electrode；
Ohmic contact anneals to form Ohm contact electrode.
2. being suitable for the silicon carbide Ohm contact production method of high temperature as described in claim 1, which is characterized in that the cleaning
The process of silicon carbide wafers are as follows:
Using the RCA cleaning method of standard, silicon carbide wafers are cleaned, remove silicon carbide wafers surface contamination.
3. being suitable for the silicon carbide Ohm contact production method of high temperature as described in claim 1, which is characterized in that the photoetching
Define the process of ohmic contact regions are as follows:
A layer photoresist is coated on silicon carbide wafers surface, the region for needing to make Ohm contact electrode is exposed development,
Expose silicon carbide.
4. being suitable for the silicon carbide Ohm contact production method of high temperature as claimed in claim 3, which is characterized in that the photoetching
Glue is with a thickness of 0.3 μm of -5um.
5. being suitable for the silicon carbide Ohm contact production method of high temperature as described in claim 1, which is characterized in that described in carbon
The process of SiClx disk surfaces deposition multiple layer metal are as follows:
Using evaporation or sputtering method deposit multiple layer metal, the nickel with a thickness of 30nm-200nm, the thickness of the tungsten or niobium
Degree is 20nm-100nm.
6. being suitable for the silicon carbide Ohm contact production method of high temperature as claimed in claim 5, which is characterized in that the nickel
With a thickness of 50nm-150nm, the tungsten or niobium with a thickness of 40nm-80nm.
7. being suitable for the silicon carbide Ohm contact production method of high temperature as described in claim 1, which is characterized in that the metal
Removing, prepares the process of metal electrode are as follows:
Silicon carbide wafers are impregnated in organic solvent after metal deposit, the extra gold of removal photoresist and deposition on a photoresist
Belong to, only retain required for metallic electrode portion, in organic solvent by metal removal it is clean after, using deionized water to carbonization
Silicon wafer is rinsed.
8. being suitable for the silicon carbide Ohm contact production method of high temperature as described in claim 1, which is characterized in that described ohm
Contact annealing forms the process of Ohm contact electrode are as follows:
Short annealing is carried out to silicon carbide wafers using quick anneal oven, atmosphere is argon gas or nitrogen, and annealing temperature is
950 DEG C -1050 DEG C, constant temperature time is -120 seconds 30 seconds.
9. being suitable for the silicon carbide Ohm contact production method of high temperature as claimed in claim 8, which is characterized in that the annealing
Temperature is 900 DEG C -1000 DEG C, and constant temperature time is -90 seconds 60 seconds.
10. silicon carbide power device, which is characterized in that prepared using such as the described in any item methods of claim 1-9, including carbon
SiClx disk and the Ohm contact electrode being prepared on the silicon carbide wafers, the Ohm contact electrode include metal nickel layer and
Tungsten layer, or be nickel layer and niobium layer.
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| CN110868185A (en) * | 2019-04-23 | 2020-03-06 | 中国电子科技集团公司第十三研究所 | Bulk acoustic wave resonator and semiconductor device |
| CN110868185B (en) * | 2019-04-23 | 2024-04-16 | 中国电子科技集团公司第十三研究所 | Bulk acoustic wave resonator and semiconductor device |
| CN113675264A (en) * | 2021-09-14 | 2021-11-19 | 江苏芯唐微电子有限公司 | P-type silicon carbide ohmic contact structure |
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