CN109524304B - Silicon carbide gate dielectric fluorine plasma treatment method and silicon carbide power device - Google Patents
Silicon carbide gate dielectric fluorine plasma treatment method and silicon carbide power device Download PDFInfo
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 80
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 79
- 238000000034 method Methods 0.000 title claims abstract description 59
- 229910052731 fluorine Inorganic materials 0.000 title claims abstract description 57
- 239000011737 fluorine Substances 0.000 title claims abstract description 57
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 title claims abstract description 50
- 238000009832 plasma treatment Methods 0.000 title claims abstract description 15
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 70
- 230000003647 oxidation Effects 0.000 claims abstract description 68
- 238000004140 cleaning Methods 0.000 claims abstract description 28
- 238000012545 processing Methods 0.000 claims description 20
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 14
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- 239000002253 acid Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 150000001412 amines Chemical class 0.000 claims description 3
- 239000003960 organic solvent Substances 0.000 claims description 3
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 3
- 239000012498 ultrapure water Substances 0.000 claims description 3
- 230000002378 acidificating effect Effects 0.000 claims 2
- 238000009835 boiling Methods 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 18
- 238000000137 annealing Methods 0.000 abstract description 9
- 239000002341 toxic gas Substances 0.000 abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 5
- 239000001301 oxygen Substances 0.000 abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000764238 Isis Species 0.000 description 1
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000003471 anti-radiation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl chloride Substances ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
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Abstract
本发明提供了一种碳化硅栅介质氟等离子体的处理方法及碳化硅功率器件，包括以下步骤，对圆片进行清洗；对经清洗的圆片表面进行电子回旋共振‑氟等离子体处理；放入氧化炉进行氧化。本发明提供的碳化硅栅介质氟等离子体的处理方法，在碳化硅进行干氧氧化前进行含氟等离子体处理，处理后的碳化硅在低温氧化设备中可实现碳化硅氧化，一方面避免使用传统退火工艺中的有毒气体，另一方面避免了采用特定的高温氧化退火设备，保证栅介质可靠性的同时，降低了工艺与设备成本，也降低了工艺的热预算。
The invention provides a method for treating silicon carbide gate dielectric fluorine plasma and a silicon carbide power device, comprising the following steps: cleaning a wafer; performing electron cyclotron resonance-fluorine plasma treatment on the surface of the cleaned wafer; into the oxidation furnace for oxidation. In the method for treating silicon carbide gate dielectric fluorine plasma provided by the present invention, fluorine-containing plasma treatment is performed before dry oxygen oxidation of silicon carbide, and silicon carbide oxidation can be realized on the treated silicon carbide in a low-temperature oxidation equipment. On the one hand, the use of The toxic gas in the traditional annealing process, on the other hand, avoids the use of specific high-temperature oxidation annealing equipment, which not only ensures the reliability of the gate dielectric, but also reduces the cost of the process and equipment, and also reduces the thermal budget of the process.
Description
Technical Field
The invention belongs to the technical field of semiconductor devices, and particularly relates to a method for processing a silicon carbide gate dielectric fluorine plasma and a silicon carbide power device.
Background
The third generation semiconductor material represented by silicon carbide (SiC) has the superior performances of large forbidden band width, high critical field intensity, high thermal conductivity and the like, and is one of ideal materials for preparing high-voltage, high-power and anti-radiation devices. Capable of directly growing SiO by thermal oxidation2The development of SiC MOSFET devices (Metal-Oxide-Semiconductor Field-Effect Transistor, Metal-Oxide-Semiconductor Field-Effect Transistor for short) is accelerated by the advantages of the medium, but SiO obtained by pure dry oxygen oxidation is adopted2Poor interface quality of gate dielectric, SiC/SiO2The problems of low carrier mobility of a device channel, large grid leakage, poor device reliability and the like caused by high interface state density restrict the SiC MOSThe development of FET devices. How to prepare high-quality SiC gate dielectrics is one of the current research hotspots.
In order to improve SiC/SiO2The main research on the quality of the interface, the reduction of the density of the interface state and the improvement of the reliability of the gate dielectric is focused on the annealing process at present, including NO or N2O gas annealing, POCl3Gas annealing, Cl2Annealing, and the like. Wherein nitrogen or phosphorus can react with SiC/SiO2Dangling bonds or carbon cluster bonds at the interface to passivate SiC/SiO2An interface state at the interface. The gas adopted by the traditional annealing process is mostly toxic gas, and the traditional annealing process needs to be carried out in a specific oxidation furnace, the oxidation temperature is as high as 1300 ℃ or above, and the preparation cost and difficulty of the process are increased.
Disclosure of Invention
The invention aims to provide a method for treating a silicon carbide gate dielectric fluorine plasma, which can avoid the problems of toxic gas, high-temperature process and the like.
In order to achieve the purpose, the invention adopts the technical scheme that: the method for treating the silicon carbide gate dielectric fluorine plasma comprises the following steps:
cleaning the wafer;
performing electron cyclotron resonance-fluorine plasma treatment on the surface of the cleaned wafer;
putting the mixture into an oxidation furnace for oxidation, wherein the oxidation temperature is not more than 1200 ℃.
Further, the performing electron cyclotron resonance-fluorine plasma treatment on the cleaned wafer surface comprises:
the treatment time is 8min-10min, the fluorine-containing gas flow is 50ml/min-70ml/min, the treatment temperature is 400-600 ℃, and the vacuum degree of the cavity is 10-4Pa, microwave power of 500W-700W.
Further, the treatment time is 9min-10min, the fluorine-containing gas flow is 55ml/min-65ml/min, the treatment temperature is 450 ℃ -550 ℃, and the vacuum degree of the cavity is 10-4Pa, microwave power of 550W-650W.
Further, the treatment time is 9min, the fluorine-containing gas flow is 60ml/min, the treatment temperature is 500 ℃, and the vacuum degree of the cavity isIs 10-4Pa, microwave power of 600W.
Further, the oxidation in an oxidation furnace comprises:
the oxidation temperature is not more than 1200 ℃, and the oxidation time is 100min-150 min.
Further, the oxidation temperature is not more than 1100 ℃, and the oxidation time is 110min-130 min.
Further, the oxidation temperature is 1000 ℃, and the oxidation time is 120 min.
Further, the wafer comprises silicon carbide N from bottom to top+Substrate and silicon carbide N-An epitaxial layer.
Further, the wafer is cleaned by an RCA cleaning method, and the RCA cleaning method mainly comprises the following steps:
firstly, carrying out acid oxidation cleaning by using acid hydrogen peroxide containing sulfuric acid;
then alkaline oxidation cleaning is carried out by alkalescent hydrogen peroxide containing amine;
then cleaning with dilute hydrofluoric acid solution;
finally, acid oxidation cleaning is carried out by using acid hydrogen peroxide containing hydrochloric acid;
rinsing with ultrapure water in the middle of each cleaning, and finally drying with a low-boiling-point organic solvent.
The method for treating the silicon carbide gate dielectric fluorine plasma has the beneficial effects that: compared with the prior art, the method for treating the silicon carbide gate dielectric fluorine plasma carries out fluorine-containing plasma treatment before silicon carbide is subjected to dry oxygen oxidation, the treated silicon carbide can realize silicon carbide oxidation in low-temperature oxidation equipment, toxic gas and high-temperature process are effectively avoided, and SiC/SiO does not have high-temperature process2The surface dielectric has better appearance, the grid leakage current is lower, the process cost is greatly reduced, and the reliability of the grid dielectric is improved.
It is another object of the present invention to provide a silicon carbide power device comprising silicon carbide N+Substrate, silicon carbide N-An epitaxial layer and a silicon dioxide layer. The device is prepared by the methodThe gate dielectric has better appearance, lower gate leakage current and reliable work.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed for the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a wafer used in the processing method according to an embodiment of the present invention;
FIG. 2 is a schematic view of a process for treating the surface of a silicon carbide wafer with fluorine-containing plasma;
FIG. 3 shows the oxidation growth of SiO by silicon carbide2Schematic medium process diagram.
Wherein, in the figure:
1-silicon carbide N+A substrate; 2-silicon carbide N-An epitaxial layer; 3-silicon dioxide layer.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1 to 3, a method for forming a silicon carbide gate dielectric fluorine plasma according to the present invention will now be described. The treatment method of the silicon carbide gate dielectric fluorine plasma comprises the following steps:
step 1: cleaning the wafer;
step 2: performing electron cyclotron resonance-fluorine plasma treatment, namely electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition (ECR-pemvd), on the surface of the cleaned wafer, see fig. 2;
and step 3: and putting the silicon dioxide layer into an oxidation furnace for oxidation, wherein the oxidation temperature does not exceed 1200 ℃, and forming the silicon dioxide layer 3 as a protective layer, which is shown in figure 3.
Compared with the prior art, the method for treating the silicon carbide gate dielectric fluorine plasma adopts a fluorine-containing plasma treatment technology, the fluorine-containing plasma treatment is carried out before the dry oxygen oxidation of SiC, the treated SiC can be oxidized in common oxidation equipment, the oxidation temperature does not exceed 1200 ℃, toxic gas and high-temperature process are effectively avoided, and the SiC/SiO medium fluorine plasma treatment method has no high-temperature process2The surface dielectric appearance is better, the grid leakage current is lower, and the reliability of the grid dielectric is improved.
Therefore, the invention provides a method for processing a low-temperature SiC gate dielectric, which comprises the steps of carrying out fluorine-containing plasma processing before carrying out dry oxygen oxidation on SiC, and carrying out SiC oxidation on the processed SiC in low-temperature oxidation equipment. The method is mainly used for manufacturing a gate dielectric of the SiC MOSFET device, the SiC MOSFET device and similar devices in the field of microelectronics.
The invention has the advantages that: fluorine can be mixed with SiC/SiO by a fluorine-containing plasma treatment instead of an annealing process with toxic gases2The interface state of the interface is combined, so that the effect of reducing the density of the interface state is achieved. In addition, the SiC surface treated by the fluorine-containing gas can be oxidized in a conventional oxidation furnace, so that a high-temperature oxidation process is avoided, and the production cost is greatly reduced.
Referring to fig. 2, as an embodiment of the method for processing a silicon carbide gate dielectric fluorine plasma provided by the present invention, the performing an electron cyclotron resonance-fluorine plasma process on the surface of the cleaned wafer includes: the treatment time is 8min-10min, the fluorine-containing gas flow is 50ml/min-70ml/min, the treatment temperature is 400-600 ℃, and the vacuum degree of the cavity is 10-4Pa, microwave power of 500W-700W.
Optionally, the treatment time is 9min to 10min, the fluorine-containing gas flow is 55ml/min to 65ml/min, the treatment temperature is 450 ℃ to 550 ℃, and the vacuum degree of the cavity is 10-4Pa, microwaveThe power is 550W-650W.
Optionally, the treatment time is 9min, the fluorine-containing gas flow is 60ml/min, the treatment temperature is 500 ℃, and the vacuum degree of the cavity is 10-4Pa, microwave power of 600W.
Referring to fig. 3, as a specific embodiment of the method for processing a silicon carbide gate dielectric fluorine plasma according to the present invention, the silicon carbide gate dielectric fluorine plasma is placed in an oxidation furnace to perform an oxidation process, wherein an oxidation temperature does not exceed 1200 ℃, and an oxidation time is 100min to 150 min.
Optionally, the oxidation temperature is not more than 1100 ℃, and the oxidation time is 110min-130 min.
Optionally, the oxidation temperature is 1000 ℃ and the oxidation time is 120 min.
Referring to fig. 1, as an embodiment of the method for processing a silicon carbide gate dielectric fluorine plasma provided by the present invention, a wafer comprises silicon carbide N from bottom to top+Substrate 1 and silicon carbide N-An epitaxial layer 2.
Referring to fig. 1, as a specific embodiment of the method for processing a silicon carbide gate dielectric fluorine plasma provided by the present invention, an RCA cleaning method is adopted to clean a wafer, and the RCA cleaning method mainly includes:
firstly, carrying out acid oxidation cleaning by using acid hydrogen peroxide containing sulfuric acid;
then alkaline oxidation cleaning is carried out by alkalescent hydrogen peroxide containing amine;
then cleaning with dilute hydrofluoric acid solution;
finally, acid oxidation cleaning is carried out by using acid hydrogen peroxide containing hydrochloric acid;
rinsing with ultrapure water in the middle of each cleaning, and finally drying with a low-boiling-point organic solvent.
The method comprises standard RCA cleaning on silicon carbide epitaxial material, performing fluorine-containing plasma treatment on the surface of the SiC epitaxial material, and oxidizing in an oxidation furnace to grow SiO2A medium.
The invention provides a specific implementation mode of a method for treating a silicon carbide gate dielectric fluorine plasma, which comprises the following steps of:
step 1: subjecting the wafer to standard RCA cleaning, wherein FIG. 1 is a schematic structural diagram of silicon carbide material, wherein 1 is silicon carbide N+Substrate, 2 is silicon carbide N-And (3) epitaxial material.
Step 2: placing the cleaned wafer on ECR fluorine plasma surface for treating for 8min-10min, wherein the fluorine-containing gas flow is 60ml/min, the treatment temperature is 500 deg.C, and the vacuum degree of the cavity is 10-4Pa, microwave power of 600W. FIG. 2 is a schematic structural diagram of a SiC material after fluorine plasma treatment.
And step 3: placing the wafer treated by the fluorine-containing plasma into an oxidation furnace for oxidation treatment at an oxidation temperature of not more than 1200 ℃ for 120min, wherein FIG. 3 is a structural schematic diagram of a silicon carbide material after oxidation, and 3 is SiO grown by oxidation2A medium.
The silicon wafer cleaning process adopts an RCA method which is a standard cleaning method of the silicon wafer in the semiconductor industry, and is not described herein again.
Referring to fig. 3, the present invention also provides a silicon carbide power device, which is prepared by the method and comprises silicon carbide N+Substrate 1, silicon carbide N-The epitaxial layer 2 and the silicon dioxide layer 3 have good appearance, the grid leakage current is low, and the work of the grid medium is reliable.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (9)
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| TW473857B (en) * | 1996-04-26 | 2002-01-21 | Hitachi Ltd | Method of manufacturing semiconductor device |
| CN1429400A (en) * | 2000-04-11 | 2003-07-09 | 克里公司 | Method for forming vias in silicon carbide and resulting devices and circuit |
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| CN105355561A (en) * | 2015-11-03 | 2016-02-24 | 大连理工大学 | A Surface Pretreatment Method for Reducing the Interface State Density of SiC MOS |
| CN105702712A (en) * | 2016-01-29 | 2016-06-22 | 大连理工大学 | A method for improving ohmic contact characteristics of silicon carbide semiconductor |
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| TWM473857U (en) * | 2013-12-06 | 2014-03-11 | Lin-Fang Wu | Language spelling Chinese checkers and board structure |
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Patent Citations (8)
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| US4595453A (en) * | 1983-09-22 | 1986-06-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for etching a semiconductor substrate or layer |
| US4865685A (en) * | 1987-11-03 | 1989-09-12 | North Carolina State University | Dry etching of silicon carbide |
| TW473857B (en) * | 1996-04-26 | 2002-01-21 | Hitachi Ltd | Method of manufacturing semiconductor device |
| CN1429400A (en) * | 2000-04-11 | 2003-07-09 | 克里公司 | Method for forming vias in silicon carbide and resulting devices and circuit |
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